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Epistar Corporation patents


Recent patent applications related to Epistar Corporation. Epistar Corporation is listed as an Agent/Assignee. Note: Epistar Corporation may have other listings under different names/spellings. We're not affiliated with Epistar Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "E" | Epistar Corporation-related inventors


 new patent  Light-emitting apparatus

The present application discloses a light-emitting apparatus having a light-emitting device and a wavelength conversion layer. The light-emitting device has a first top surface and a first side surface, and the wavelength conversion layer has a second top surface and a second side surface and covers the first top surface. ... Epistar Corporation

Light-emitting device and the method of manufacturing the same

The present application discloses a light-emitting device including a first support structure having a first surface, a plurality of light-emitting elements arranged on the first surface, and a first adhesive layer arranged on the first support structure. Each light-emitting element has a side wall, a bottom surface, a first electrode pad, and a second electrode pad arranged on the bottom surface. ... Epistar Corporation

Light-emitting device and manufacturing method thereof

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.. ... Epistar Corporation

Light-emitting device

This disclosure discloses a light-emitting device. The light-emitting device includes: a heat-dissipating structure having a first part and a second part separated from the first part; a light-emitting unit including a light-emitting element with a first pad formed on the first part; and a first transparent enclosing the light-emitting element and having a sidewall; and an adhesive material covering a portion of the sidewall.. ... Epistar Corporation

Light-emitting device

A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. ... Epistar Corporation

Light emitting device and method of fabricating the same

A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.. . ... Epistar Corporation

Light-emitting device

A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a side surface. ... Epistar Corporation

Light-emitting device

The present disclosure provides a light emitting device including an led array including a plurality of led cells connected in series disposed on a single substrate; wherein each led cell includes a first edge, a second edge, a third edge, and a fourth edge, and wherein the led array includes a first led and a second led, the first edge of the first led is adjacent to the third edge of the second led; a first trench, disposed between the first led cell and the second led; and a first conducting metal, disposed on the first trench, the first edge of the first led and the third edge of the second led, and electrically connecting the first led and the second led in series; wherein the first led and/or the second led includes a round corner in a top view.. . ... Epistar Corporation

Light emitting device

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.. . ... Epistar Corporation

Light-emitting device

A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.. . ... Epistar Corporation

Semiconductor light-emitting device

A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.. . ... Epistar Corporation

Light-emitting diode device

A led device includes a substrate; a plurality of led units on the substrate, wherein each led unit includes: a first semiconductor layer; a second semiconductor layer; a first sidewall; a second sidewall opposite to the first sidewall; and a third sidewall connecting the first and second sidewalls; a first group of conductive connecting structure including n (n is an integer, and n>1) first conductive connecting structures formed on the first sidewall of one of the led units and electrically connecting the led units; and a second group of conductive connecting structure including m (m is an integer, m≥1, and n≠m) second conductive connecting structures formed on the second sidewall of the same one of the led unit and electrically connecting the led units; wherein each of the first and the second conductive connecting structures includes a middle part, a first and a second extending parts; wherein the first and the second extending parts have different length.. . ... Epistar Corporation

Light emitting device

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.. . ... Epistar Corporation

Light-emitting device

This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a pad electrically connected to the active layer, a metal bump formed on the pad, and a reflective insulation layer. ... Epistar Corporation

05/10/18 / #20180130924

Light-emitting device and manufacturing method thereof

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.. . ... Epistar Corporation

05/10/18 / #20180128774

Sensing device

A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. ... Epistar Corporation

05/10/18 / #20180128761

Sensing device, sensing apparatus and sensing system

A sensing device includes a first iii-v compound stack and a second iii-v compound stack. The first iii-v compound stack has a first sensing area, and the second iii-v compound stack has a second sensing area. ... Epistar Corporation

05/03/18 / #20180122986

Light-emitting device and manufacturing method thereof

A light-emitting device including a substrate; a first conductivity semiconductor layer on the substrate; a first barrier on the first conductivity semiconductor layer; a well on the first barrier and including a first region having a first energy gap and a second region having a second energy gap and closer to the semiconductor layer than the first region; a second barrier on the well; and a second conductivity semiconductor layer on the second barrier; wherein the first energy gap decreases along a stacking direction of the light-emitting device and has a first gradient, the second energy gap increases along the stacking direction and has a second gradient, and an absolute value of the first gradient is smaller than an absolute value of the second gradient.. . ... Epistar Corporation

04/19/18 / #20180108808

Light-emitting device having a patterned surface

A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.. . ... Epistar Corporation

04/19/18 / #20180108807

Light-emitting devices

A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.. . ... Epistar Corporation

04/19/18 / #20180108705

Light-emitting diode device

A light-emitting diode device includes a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units form a serially-connected array, and the serially-connected array includes: a plurality of adjacent light-emitting unit columns; a first light-emitting unit row; a second light-emitting unit row; and a third light-emitting unit row adjacent with the second light-emitting unit row; and a plurality of conductive connecting structures connecting the plurality of light-emitting units; wherein the light-emitting units in the first light-emitting unit rows having the same connecting direction; wherein the second and the third light-emitting unit rows include n light-emitting units with (n−1) times of sequentially connecting via (n−1) conductive connecting structures, and the (n−1) times of the sequentially connecting comprise (n/2) times of vertical connecting or (n/2) times of horizontal connections.. . ... Epistar Corporation

04/12/18 / #20180102458

Light-emitting device

The present disclosure provides a light-emitting device. The light-emitting device includes a substrate, a light-emitting stack on the substrate, and a semiconductor window layer comprising algainp series material disposed between the substrate and the light-emitting stack.. ... Epistar Corporation

03/22/18 / #20180078782

Therapeutic light-emitting module

A light-emitting module includes a carrier, a plurality of light-emitting units, and a protection layer. The carrier has a lighting portion and an extending portion. ... Epistar Corporation

03/15/18 / #20180076369

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. ... Epistar Corporation

03/15/18 / #20180076358

Optoelectronic device and method for manufacturing the same

An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality of first conductive type electrodes is formed on a corner constituted by one of the two longer sides and one of the two shorter sides, and wherein one fourth part of the plurality of first conductive type electrodes is formed along the one of the two longer sides, the one fourth part of the plurality of first conductive type electrodes comprises a head portion and a tail portion, the head portion comprises a width larger than that of the tail portion.. . ... Epistar Corporation

03/08/18 / #20180069157

Light-emitting device

A light-emitting device is provided. Comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.. ... Epistar Corporation

03/08/18 / #20180069155

Light emitting device with reflective electrode

A light-emitting device, comprises a semiconductor light emitting stack; and an electrode on the semiconductor light emitting stack, the electrode comprising an adhesion layer, comprising chromium (cr) or rhodium (rh); a mirror layer, formed on the adhesion layer and comprising silver (ag) or aluminum (al); a barrier layer, formed on the mirror layer and comprising a first pair of metal layers, wherein the first pair of metal layers comprises a first metal layer and a second metal layer different from the first metal layer; and a bonding layer, formed on the barrier layer and comprising gold (au), wherein from a cross-sectional view, the barrier layer fully covers the mirror layer and the adhesion layer.. . ... Epistar Corporation

03/01/18 / #20180062046

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a transparent substrate, an led die on the transparent substrate, a second substrate on the led die, and two electrode pins located between the transparent substrate and the second substrate. The led die comprises a first surface, a second surface opposite to the first surface, and two electrodes located on the first surface, wherein the led die is enclosed by the transparent substrate and the second substrate, and the two electrodes of the led die respectively connect to the two electrode pins without a wire bonding process. ... Epistar Corporation

03/01/18 / #20180062043

Light-emitting device

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an uv light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.. . ... Epistar Corporation

03/01/18 / #20180062033

Light emitting device

This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.. ... Epistar Corporation

02/22/18 / #20180053882

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a wavelength converting layer and a light-adjusting layer. The light-emitting element has a first upper surface, a bottom surface, and a lateral surface between the first upper surface and the bottom surface. ... Epistar Corporation

02/15/18 / #20180048119

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first dbr stack, a light-emitting stack and a second dbr stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.. ... Epistar Corporation

02/15/18 / #20180047779

Light-emitting diode

A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.. . ... Epistar Corporation

02/01/18 / #20180033918

Optoelectronic device and the manufacturing method thereof

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; wherein the second contact layer comprises a plurality of dots separating to each other and formed of semiconductor material.. . ... Epistar Corporation

02/01/18 / #20180033880

High power semiconductor device

This application provides a high power semiconductor device, which is characterized by forming two diodes connected in parallel and a schottky contact on a channel layer to lower the turn-on voltage and turn-on resistance of the high power semiconductor device at the same time and to enhance the breakdown voltage.. . ... Epistar Corporation

02/01/18 / #20180033824

Light-emitting structure

A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.. . ... Epistar Corporation

02/01/18 / #20180033778

Light-emitting device

A light-emitting device of an embodiment of the present application comprises light-emitting units; a transparent structure having cavities configured to accommodate at least one of the light-emitting units; and a conductive element connecting at least two of the light-emitting units.. . ... Epistar Corporation

01/25/18 / #20180026158

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises the light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising a first sub-layer, a second sub-layer and a roughened surface, wherein the first sub-layer has the same composition as that of the second sub-layer, and the second sub-layer is farther from the light-emitting stack than the first sub-layer; wherein the first sub-layer and the second sub-layer each comprises a group iii element and a group v element, and an atomic ratio of the group iii element to the group v element of the first sub-layer is less than an atomic ratio of the group iii element to the group v element of the second sub-layer.. ... Epistar Corporation

01/11/18 / #20180013038

Method of making a light-emitting device

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the first thickness; and patterning the protective layer.. . ... Epistar Corporation

01/11/18 / #20180013037

Semiconductor light-emitting device

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.. . ... Epistar Corporation

01/11/18 / #20180012929

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.. . ... Epistar Corporation

01/11/18 / #20180010738

Light-emitting apparatus

A light-emitting apparatus includes a supporting element, a light-emitting device, and a connecting pin. The light-emitting device has a pair of conductive pads and is disposed on the supporting element. ... Epistar Corporation

01/04/18 / #20180006206

Light-emitting device and method of manufacturing thereof

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.. . ... Epistar Corporation

01/04/18 / #20180006187

Optoelectronic semiconductor device with barrier layer

An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.. . ... Epistar Corporation

12/28/17 / #20170373226

Light-emitting device

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to the second semiconductor layer; and a metal layer formed on the semiconductor stack, wherein the metal layer surrounds the multiple sidewalls of the second pad and the metal layer is separated from the second pad.. . ... Epistar Corporation

12/28/17 / #20170373219

Method of selectively transferring semiconductor device

A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.. . ... Epistar Corporation

12/28/17 / #20170373064

Heterogeneously integrated semiconductor device and manucacturing method thereof

A heterogeneously integrated semiconductor devices includes a base substrate; a ge-containing film formed on the base substrate; a pmosfet transistor having a first fin formed on the ge-containing film; and a nmosfet transistor having a second fin formed on the ge-containing film; wherein the pmosfet transistor and the nmosfet transistor compose a cmos transistor, and the first fin comprises ge-containing material and the second fin comprises a group iii-v compound.. . ... Epistar Corporation

12/21/17 / #20170365750

Optoelectronic element

An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. ... Epistar Corporation

12/21/17 / #20170365741

Light-emitting device

A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.. . ... Epistar Corporation

12/21/17 / #20170365740

Light-emitting device having a patterned substrate and the method thereof

A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein one of the plurality of textured structures comprises a top portion and a bottom portion, wherein a first distance between a first projection of the top portion on the bottom portion and the bottom portion at one side is different from a second distance between a second projection of the top portion on the bottom portion and the bottom portion at another side.. . ... Epistar Corporation

12/21/17 / #20170365637

Light-emitting element having a plurality of light-emitting structures

A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.. . ... Epistar Corporation

12/14/17 / #20170358721

Light emitting structure and a manufacturing method thereof

A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. ... Epistar Corporation

12/07/17 / #20170352792

Semiconductor light source

A light source may comprise a thermally conductive frame comprising a base and a faceted portion extending from the base. The faceted portion may comprise a plurality of facets spaced circumferentially thereabout. ... Epistar Corporation

12/07/17 / #20170352782

Light-emitting device and manufacturing method thereof

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.. ... Epistar Corporation

11/30/17 / #20170345983

Light-emitting device and light-emitting apparatus comprising the same

The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a led chip, a first reflective layer on the led chip and an optical diffusion layer formed between the first reflective layer and the led chip.. ... Epistar Corporation

11/30/17 / #20170345921

Power device and method for fabricating thereof

A power device having a patterned three-dimensional gate geometry is fabricated and described. The power device achieved increased effective gate width and increased channel conductivity per unit length. ... Epistar Corporation

11/23/17 / #20170338278

Optoelectronic device

An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic unit and the second optoelectronic unit; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad electrically insulated from the third optoelectronic unit wherein the first pad is formed on the third optoelectronic unit or disposed between the first electrode and the second electrode; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.. . ... Epistar Corporation

11/16/17 / #20170331007

Light-emitting element

A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on the semiconductor light-emitting stack; wherein in a top view, the cushion part is disposed in a center region of the light-emitting element.. . ... Epistar Corporation

11/16/17 / #20170331003

Light-emitting element and the manufacturing method thereof

This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. ... Epistar Corporation

11/16/17 / #20170331001

Light-emitting device and manufacturing method thereof

A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.. ... Epistar Corporation

11/16/17 / #20170330868

Light emitting device

The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one led chip emitting light omni-directionally. Wherein the led chip is disposed on one surface of the substrate and the light emitting angle of the led chip is wider than 180° , and the light emitted by the led chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. ... Epistar Corporation

11/16/17 / #20170330781

Apparatus for flipping semiconductor device

An apparatus for transferring a semiconductor device comprises platform comprising a carrier; a positioning unit above the platform and comprising an opening; and an elevating unit connecting the platform and the positioning unit; and a heater.. . ... Epistar Corporation

11/09/17 / #20170325303

Semiconductor component and light emitting device using same

A semiconductor component including a wheatstone bridge rectifying circuit and a transistor is provided, wherein the wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.. . ... Epistar Corporation

11/09/17 / #20170324009

Optoelectronic system

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material covering a plurality of lateral surfaces; and a reflecting layer, formed on the wavelength converting material which is arranged on the top surface.. ... Epistar Corporation

10/26/17 / #20170309783

Substrate wafer and manufacturing method of a iii-nitride semiconductor device

A substrate wafer composed of a hexagonal single crystal material including a c crystalline plane, an a crystalline plane, and an m-axis direction includes a top surface is a c-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned c crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned m-axis direction.. . ... Epistar Corporation

10/26/17 / #20170309774

Semiconductor light emitting device and method of fabricating the same

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.. . ... Epistar Corporation

10/12/17 / #20170294566

Light-emitting device

This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. ... Epistar Corporation

10/12/17 / #20170294558

Method of manufacturing a light emitting device

A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (cb) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer; etching the transparent conductive layer and exposing a reserved region for a first pad electrode and a mesa structure, respectively; and etching an exposed portion of the light emitting stacked layers and a portion of the current blocking layer to form a remaining current blocking layer, the mesa structure and a first opening.. . ... Epistar Corporation

10/12/17 / #20170294553

Manufacturing method of light-emitting device

A manufacturing method of light-emitting device is disclosed. The method includes providing an led wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the led wafer and irradiating the led wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the led wafer to separate the led wafer into a plurality of led chips.. ... Epistar Corporation

10/12/17 / #20170294301

Method of growing a high quality iii-v compound layer on a silicon substrate

The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. ... Epistar Corporation

10/05/17 / #20170288095

Light-emitting device

A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. ... Epistar Corporation

10/05/17 / #20170287888

Lighting apparatuses and led modules for both illumination and optical communication

An led module has a controller with a modulator and illumination driver, and first and second led chains. The first led chain is connected to the modulator, has a first group of led cells, and emits a first light under a pulse mode current input from the modulator. ... Epistar Corporation

10/05/17 / #20170284644

Illumination device

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only a portion of the supporting surface without covering the side surface.. ... Epistar Corporation

09/28/17 / #20170279005

Semiconductor device and the manufacturing method thereof

The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a dislocation density of the buffer layer is smaller than smaller than 1*109 cm−2.. . ... Epistar Corporation

09/28/17 / #20170279004

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: an active structure, the active structure comprising alternate well layers and barrier layers, wherein each of the well layers comprises multiple different elements of group va; a first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type sandwiching the active structure; an intermediate layer interposed between the first semiconductor layer and the active structure; and a first window layer on the first semiconductor layer, wherein the intermediate layer comprises alz1ga1-z1as, the first window layer comprises alz2ga1-z2as, and z1>z2.. ... Epistar Corporation

09/21/17 / #20170271568

Light-emitting device

A light-emitting device comprises a plurality of light-emitting pillars separated from each other by a space, wherein each of the plurality of light-emitting pillars comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting pillars; a top electrode formed on the reflective layer and the plurality of light-emitting pillars; and a fill material formed between the reflective layer and the top electrode.. . ... Epistar Corporation

09/21/17 / #20170271548

Light-emitting device and manufacturing method thereof

The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.. . ... Epistar Corporation

09/21/17 / #20170271547

Light emitting device and method of fabricating the same

A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.. . ... Epistar Corporation

09/21/17 / #20170271290

Semiconductor device and a method of manufacturing thereof

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.. . ... Epistar Corporation

09/14/17 / #20170263820

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8λ) volt and (1240/0.5λ) volt.. ... Epistar Corporation

09/14/17 / #20170263818

Light-emitting device

A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.. . ... Epistar Corporation

09/14/17 / #20170263674

Light-emitting structure

A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light emitting structure unit; wherein the first light-emitting structure unit comprises a first side surface and a second side surface; wherein the first side surface is between the first and the second light-emitting structure units, and the second side surface is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the first side surface is inclined and a slope of the first side surface is gentler than a slope of the second side surface.. . ... Epistar Corporation

09/14/17 / #20170261160

Light emitting bulb

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. ... Epistar Corporation

09/07/17 / #20170256914

Light-emitting device

A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first dbr stack, a light-emitting stack and a second dbr stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second dbr stack.. ... Epistar Corporation

09/07/17 / #20170256683

Light-emitting device

A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.. . ... Epistar Corporation

09/07/17 / #20170256681

Light-emitting element

A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering the cavity, and wherein the insulative layer has a first refractive index equal to or smaller than 1.4.. . ... Epistar Corporation

09/07/17 / #20170256678

Light-emitting element having a reflective structure with high efficiency

A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.. . ... Epistar Corporation

08/31/17 / #20170250327

Light-emitting device

An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a first conductive electrode, and a second conductive electrode. ... Epistar Corporation

08/31/17 / #20170250310

Light-emitting device

The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 Å.. ... Epistar Corporation

08/24/17 / #20170244005

A method for forming a virtual germanium substrate using a laser

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. ... Epistar Corporation

08/17/17 / #20170236988

Lighting emitting device with aligned-bonding

A light-emitting device comprises a semiconductor light-emitting stack comprising a first connecting layer; and a substrate under the semiconductor light-emitting stack, wherein the substrate comprises a second connecting layer connecting the first connecting layer; wherein the first connecting layer comprises a first region, a first pattern, and a first connecting surface; wherein a difference of a reflectivity between the first pattern and the first region is larger than 20%; wherein the second connecting layer comprises a second region and a side of the first pattern fully contact the second region.. . ... Epistar Corporation

08/17/17 / #20170236978

Light-emitting device and manufacturing method thereof

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.. ... Epistar Corporation

08/03/17 / #20170222102

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface. ... Epistar Corporation

07/20/17 / #20170207368

Light-emitting device

A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively formed on the bottom surface of the plurality of recesses; a first electrode pad formed on the light-emitting semiconductor stack and contacting with the first electrode; a second electrode pad formed on the light-emitting semiconductor stack and contacting with the plurality of second electrode; a first insulating layer comprising a plurality of passages to expose the plurality of second electrodes; and a second insulating layer comprising a plurality of spaces and formed on the first insulating layer, wherein the plurality of spaces is covered by the first electrode pad.. . ... Epistar Corporation

07/13/17 / #20170200866

Light-emitting device and manufacturing method thereof

A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.. ... Epistar Corporation

07/13/17 / #20170200764

Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer; a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode electrically connected to the diode stack structure and the light-emitting structure.. ... Epistar Corporation

07/06/17 / #20170194540

Light-emitting device

A light-emitting device includes a light-emitting structure with a side surface, and a reflective layer covering the side surface. The light-emitting structure has a first light-emitting angle and a second light-emitting angle. ... Epistar Corporation

07/06/17 / #20170194532

Optoelectronic device and the manufacturing method thereof

The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.. . ... Epistar Corporation

07/06/17 / #20170194531

Light emitting device

A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (cb) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second surface is electrically opposite to the first surface, the transparent conductive layer is disposed on or above the first surface, the first pad electrode is disposed on the transparent conductive layer and on the first surface, and the second pad electrode is disposed on the second surface and on the mesa structure, the cb layer is disposed on the first surface, surrounded by the transparent conductive layer, and at a lower region of the first pad electrode, a portion of the first pad electrode is filling a first opening of the transparent conductive layer and the cb layer.. . ... Epistar Corporation

06/29/17 / #20170186929

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth position in the electrode, and the contact material is selected from the group consisting of be, se, sn, zn, and combinations thereof; and a base material different from the base material and in the electrode.. ... Epistar Corporation

06/22/17 / #20170179343

Light-emitting device

A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the pad electrode, the first portion comprises a first side and a second side, the first side is opposite to the second side, the first side comprises a first arc having a first curvature radius, and the first curvature radius is larger than 10 μm.. . ... Epistar Corporation

06/22/17 / #20170179341

Light-emitting device and manufacturing method thereof

A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks and expose a first upper surface; forming a scribing region in the first upper surface to define multiple first semiconductor stacks; etching the scribing region to form a first side wall of each of the first semiconductor stack; and dividing the substrate along the scribing region to form multiple light-emitting devices, wherein the first side wall and the top surface form an acute angle α between thereof, and 30°≦α≦80°, and a side surface of the substrate directly connects the top surface after the dividing step.. . ... Epistar Corporation

06/22/17 / #20170179086

Light-emitting device

A light-emitting device configured to electrically connect to an external circuit and having: a first light-emitting structure; a second light-emitting structure; a first conductive structure having a first connecting pad having a side surface and a top surface connected to the first light-emitting structure and an exposed bottom surface, and a first connecting portion extending away from the side surface without being directly connected to the second light-emitting structure; and a second conductive structure electrically connecting the first light-emitting structure and second light-emitting structure.. . ... Epistar Corporation

06/15/17 / #20170170375

Light-emitting device and method of manufacturing thereof

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 μm; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.. . ... Epistar Corporation

06/08/17 / #20170162768

Light-emitting device

This disclosure discloses a light-emitting device includes a semiconductor light-emitting element having a first electrode and a second electrode, a transparent layer covering the semiconductor light-emitting element, a stretchable electrical connection structure and an electrical contact portion. The stretchable electrical connection structure is formed in the transparent layer and electrically connects the first electrode, and the electrical contact portion is formed on the transparent layer and electrically connects the second electrode.. ... Epistar Corporation

06/08/17 / #20170162763

Light-emitting device

A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a first side surface. ... Epistar Corporation

06/08/17 / #20170162751

Optoelectronic device and method for manufacturing the same

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 μm.. . ... Epistar Corporation

06/01/17 / #20170155015

Light-emitting device having a patterned surface

A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.. . ... Epistar Corporation

06/01/17 / #20170154987

Normally-off high electron mobility transistors and fabrication methods thereof

Disclosure includes a normally-off field-effect semiconductor device and the fabrication method thereof. An antigrowth portion is formed on a template. ... Epistar Corporation

05/18/17 / #20170141260

Light-emitting device

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.. . ... Epistar Corporation

05/11/17 / #20170133556

Light emitting device

The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.. . ... Epistar Corporation

05/04/17 / #20170125573

Semiconductor power device

A semiconductor power device includes a substrate, an active region having a recess and disposed on the substrate, a first conductivity type semiconductor layer disposed on the recess and devoid of overlapping with the recess, a gate electrode disposed on the active region wherein a portion of the gate electrode is disposed in the recess, a dielectric layer between the active region and the gate electrode, and a two dimension electron gas formed in the active region.. . ... Epistar Corporation

04/27/17 / #20170117450

Light-emitting device

A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.. . ... Epistar Corporation

04/27/17 / #20170117376

Heterostructure device

A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a schottky contact and an ohmic contact, the schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.. ... Epistar Corporation

04/27/17 / #20170117321

Light-emitting structure

A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.. . ... Epistar Corporation

04/13/17 / #20170104134

Light emitting diode

The present invention relates to a light-emitting diode (led), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the led. ... Epistar Corporation

04/06/17 / #20170098735

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer. ... Epistar Corporation

04/06/17 / #20170097139

Light-emitting device

An embodiment of the present invention discloses a light-emitting device. The light-emitting device includes a light source configured to emit a first light at a first high temperature; and an optical element, distant from the light source, configured to generate a second light in response to an irradiation of the first light, and reach a second high temperature higher than the first high temperature under the irradiation of the first light.. ... Epistar Corporation

03/30/17 / #20170092814

Light-emitting device

A light-emitting device comprises a light-emitting stack comprising a first surface, a roughened surface, and a sidewall connecting the first surface and the roughened surface; an electrode structure formed on the roughened surface of the light-emitting stack; a dielectric layer formed on the first surface of the light-emitting stack; a barrier layer covering the dielectric layer; a first reflective electrode between the barrier layer and the first surface of the light-emitting stack; and a passivation layer covering the sidewall of the light-emitting stack and the roughened surface of the light-emitting stack which is not occupied by the electrode structure, wherein the electrode structure is surrounded by the passivation layer, and the passivation layer contacts an surface of the electrode structure and terminates at the surface of the electrode structure.. . ... Epistar Corporation

03/30/17 / #20170092806

Nitride-based semiconductor light-emitting device

A nitride-based semiconductor light-emitting device comprises a light-emitting stack comprising a first semiconductor structure having a first conductivity, a second semiconductor structure having a second conductivity, and an active region between the first semiconductor structure and the second semiconductor structure; a semiconductor buffer structure formed under the first semiconductor structure; an un-doped algan layer formed between the first semiconductor structure and the semiconductor buffer structure; and a substrate under the semiconductor buffer structure, wherein the semiconductor buffer structure comprises an un-doped first layer under the un-doped algan layer, and an un-doped second layer between the un-doped first layer and the substrate, and wherein the thickness of the un-doped first layer is thicker than that of the un-doped second layer and the un-doped algan layer.. . ... Epistar Corporation

03/30/17 / #20170092528

Metal recycling method and metal recycling equipment thereof

A metal recycling method comprises attaching a tape to a metal layer of a semiconductor structure; and separating a part of the metal layer from the semiconductor structure and transferring the part of the metal layer to the tape by a pressure difference.. . ... Epistar Corporation

03/30/17 / #20170088773

Material of phosphor and a manufacturing method thereof

An embodiment of the present disclosure discloses a phosphor material and a manufacturing method thereof. The general composition of the phosphor material is a2-xmo4:eux, wherein a includes a single element or at least two elements selected from the group consisting of ca, sr, and ba, m is si, ge or combination thereof, wherein x is greater than 0.01 and 2-x>0. ... Epistar Corporation

03/23/17 / #20170084763

Semiconductor device

A semiconductor device used for conversion between light and electricity, comprising a semiconductor stack comprising an upper surface; and an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.. . ... Epistar Corporation

03/16/17 / #20170077371

Optoelectronic semiconductor device

An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.. . ... Epistar Corporation

03/16/17 / #20170077364

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element and a wavelength conversion layer. The light-emitting element has a top surface, a bottom surface, a side surface, and a first electrical contact formed on the bottom surface. ... Epistar Corporation

03/16/17 / #20170077358

Light-emitting element with window layers sandwiching distributed bragg reflector

A light-emitting element comprises a sapphire substrate, a light-emitting stacked layer on the sapphire substrate, a first window layer under the sapphire substrate, and a dbr under the first window layer, wherein a material of the first window layer is an insulating material, wherein a thickness of the first window layer is between 300 nm and 1000 nm, wherein the dbr comprises a plurality of sublayers, and wherein a material of one of the plurality of sublayers is the same as the insulating material of the first window layer.. . ... Epistar Corporation

03/16/17 / #20170077350

Light-emitting diode device

A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.. . ... Epistar Corporation

03/09/17 / #20170069810

Light emitting device

A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.. . ... Epistar Corporation

03/09/17 / #20170069791

Light-emitting device and method of manufacturing thereof

A light-emitting device comprises a transparent substrate and a light-emitting stack formed on a surface of the transparent substrate, wherein the transparent substrate has a substrate thickness satisfying a light-extraction efficiency of the light-emitting device decreased by no more than 0.1% if the substrate thickness is decreased by 30 μm.. . ... Epistar Corporation

03/09/17 / #20170069682

Optoelectronic device

An optoelectronic device includes a substrate having a first side, a second side opposite to the first side; a first optoelectronic unit formed on the first side of the substrate; a second optoelectronic unit formed on the first side of the substrate; a third optoelectronic unit formed on the first side of the substrate; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.. . ... Epistar Corporation

03/09/17 / #20170069680

Light-emitting device

A light-emitting device is introduced herein. The light-emitting device comprises a first light-generating active layer and a second light-generating active layer stacked in a vertical direction on a substrate wherein the first light-generating active layer and the second light-generating active layer emit light having substantially the same wavelength, and wherein the substrate, the first light-generating active layer, and the second light-generating active layer are formed together in a chip.. ... Epistar Corporation

02/23/17 / #20170054057

Light-emitting device

A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface; wherein an upper surface of the buried electrode and the non-planar roughened surface of the first type semiconductor layer are substantially on the same plane.. . ... Epistar Corporation

02/23/17 / #20170054056

Light-emitting device

A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.. . ... Epistar Corporation

02/16/17 / #20170047494

Light-emitting device

A light-emitting device, including a substrate; a plurality of light-emitting units formed on the substrate, wherein the plurality of light-emitting units include a first light-emitting unit; a second light-emitting unit; and a group of light-emitting units formed between the first light-emitting unit and the second light-emitting unit, wherein each of the plurality of light-emitting unit includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a plurality of electrical connections formed on the plurality of light-emitting units, electrically connecting each two of the light-emitting units adjacent; a first pad formed on the first light-emitting unit; a second pad and a third pad formed on the second light-emitting unit; wherein one of the plurality of electrical connection connects and extends from the second pad.. . ... Epistar Corporation

02/16/17 / #20170047478

Light-emitting device

A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a wavelength filter between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the wavelength filter and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.. . ... Epistar Corporation

02/16/17 / #20170044431

Phosphor

A phosphor, having a general formula of k2[si1-xgex]yf6:mn1-y4+. The phosphor is excited to emit a light having a first main emission peak with a first maximum emission intensity and a first dominant wavelength, wherein a relative emission intensity s of the light of the phosphor is constantly greater than 85% across an temperature of the phosphor between 300 k and 470 k during operation, wherein s=(it/irt)*100%, irt and it are the first maximum emission intensity when the temperature of the phosphor is at 300 k and t during operation respectively, and 300 k<t≦470k.. ... Epistar Corporation

02/09/17 / #20170040493

Optoelectronic device

An optoelectronic device comprises a semiconductor stack, a first metal layer arranged above the semiconductor stack and having a first major plane and a first boundary with a first gradually reduced thickness, and a second metal layer arranged above the first metal layer and having a second major plane and a second boundary with a second gradually reduced thickness, wherein the second major plane parallels to the first major plane and the second boundary exceeds the first boundary, wherein a first angle formed between the first boundary and the semiconductor stack, and/or a second angle formed between the second boundary and the semiconductor stack, is/are less than 10°.. . ... Epistar Corporation

02/09/17 / #20170040492

Semiconductor light-emitting device

A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.. . ... Epistar Corporation

02/09/17 / #20170040491

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a substrate having an top surface; a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the top surface and exposes an exposing portion of the top surface; a second semiconductor stack comprising a second side wall, wherein the second semiconductor stack is on the first upper surface and exposes an exposing portion of the first upper surface; wherein the first side wall and the exposing portion of the top surface form an acute angle a between thereof, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β between thereof.. . ... Epistar Corporation

02/02/17 / #20170033265

Light-emitting device

A light-emitting device includes a substrate including an upper surface; a light-emitting stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the light-emitting stack includes a first surface and a second surface opposite to the first surface toward to the upper surface; a plurality of depressions formed in the light-emitting stack and penetrating the second semiconductor layer, the active layer and a portion of the first semiconductor layer; an insulative layer covering the second surface of the light-emitting stack; a connector including a first portion and a second portion; and an electrode disposed at a side of the light-emitting stack and electrically connecting the connector, wherein the first portion of the connector is formed in the plurality of depressions, the second portion of the connector is between the insulative layer and the light-emitting stack.. . ... Epistar Corporation

02/02/17 / #20170033259

Method of selectively transferring semiconductor device

A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.. . ... Epistar Corporation

01/26/17 / #20170025592

Light emitting structure and a manufacturing method thereof

A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. ... Epistar Corporation

01/26/17 / #20170025591

Light-emitting device

A light-emitting device includes a carrier with a first surface and a second surface opposite to the first surface; and a light-emitting unit disposed on the first surface and configured to emit a light toward but not passing through the first surface. When emitting the light, the light-emitting device has a first light intensity above the first surface, and a second light intensity under the second surface, a ratio of the first light intensity to the second light intensity is in a range of 2˜9.. ... Epistar Corporation

01/26/17 / #20170025589

Light emitting structure and method for manufacturing the same

The present disclosure provide a light emitting device package, including a light emitting die emitting a first color and an encapsulant encapsulating the light emitting die. The encapsulant includes a matrix and a plurality of inert particles dispersed in the matrix. ... Epistar Corporation

01/26/17 / #20170025567

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first mqw structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second mqw structure configured not to emit light during normal operation.. . ... Epistar Corporation

01/19/17 / #20170018684

Light-emitting element

A light-emitting element comprises a substrate; a light-emitting semiconductor stack on the substrate, the light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode on the first semiconductor layer; a reflective layer formed on the light-emitting semiconductor stack; a protection layer formed on the light-emitting semiconductor stack; and a conductive contact layer formed on the light-emitting semiconductor stack, wherein each layer above the substrate comprises a side surface inclined to a top surface of the substrate.. . ... Epistar Corporation

01/12/17 / #20170012167

Light-emitting devices

A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.. . ... Epistar Corporation

01/05/17 / #20170005232

Semiconductor light-emitting device

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.. . ... Epistar Corporation

01/05/17 / #20170005227

Light-emitting diode

A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.. . ... Epistar Corporation

01/05/17 / #20170002463

Showerhead and a thin-film deposition apparatus containing the same

A thin-film deposition apparatus comprises a chamber; a carrier in the chamber; a showerhead on the carrier, wherein the showerhead comprises multiple first gas-dispensing holes, multiple second gas-dispensing holes and multiple plasma-generating portions; and a first gas inlet system for providing a first process gas, wherein the first process gas outputted from the multiple first gas-dispensing holes.. . ... Epistar Corporation








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