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Fujitsu Semiconductor Limited patents (2014 archive)


Recent patent applications related to Fujitsu Semiconductor Limited. Fujitsu Semiconductor Limited is listed as an Agent/Assignee. Note: Fujitsu Semiconductor Limited may have other listings under different names/spellings. We're not affiliated with Fujitsu Semiconductor Limited, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "F" | Fujitsu Semiconductor Limited-related inventors


12/25/14 / #20140377921

Manufacturing method of semiconductor device

An impurity layer is formed in a first region of a semiconductor substrate, a silicon layer is grown on the semiconductor substrate, a tunnel gate insulating film is formed on a first silicon layer of a second region, a first conductor layer is formed on the tunnel gate insulating film, a first silicon oxide film and a silicon nitride film are formed on a second silicon layer, in a reduced pressure state, oxygen and hydrogen are independently introduced into an oxidation furnace to expose the silicon nitride film to active species of the oxygen and active species of the hydrogen to thereby oxidize the silicon nitride film to form a second silicon oxide film, a gate insulating film is formed on the silicon layer of the first region, a second conductor layer is formed on the second silicon oxide film and on the gate insulating film, the second conductor layer and the first conductor layer of the second region are patterned to form a stack gate of a nonvolatile memory transistor, and the second conductor layer above the first region is patterned to form a gate electrode of an mis-type transistor.. . ... Fujitsu Semiconductor Limited

12/25/14 / #20140375869

Imaging apparatus and imaging method

An imaging apparatus includes an imaging unit that photographs an object through a lens; a memory unit that stores images captured by the imaging unit; an adjusting unit that adjusts a position of the lens, based on a value that is obtained from each of the images captured by the imaging unit and that represents an extent of focusing by the lens; a calculating unit that calculates a local maximum value of the value, based on temporal changes of the value that is obtained from each of the images successively captured by the imaging unit and that represents the extent of focusing by the lens; and a selecting unit that selects an image from among the images stored in the memory unit, based on differences of the local maximum value and the value obtained from each of the images and representing the extent of focusing by the lens.. . ... Fujitsu Semiconductor Limited

12/18/14 / #20140370660

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. ... Fujitsu Semiconductor Limited

12/18/14 / #20140367861

Semiconductor device and semiconductor device fabrication method

A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. ... Fujitsu Semiconductor Limited

12/18/14 / #20140367791

Semiconductor device and manufacturing method thereof

A first well in a first conductivity type which is formed at a first region and is electrically connected to a first power supply line, a second well in a second conductivity type being an opposite conductivity type of the first conductivity type which is formed at a second region and is electrically connected to a second power supply line, a third well in the second conductivity type which is integrally formed with the second well at a third region adjacent to the second region, a fourth well in the first conductivity type integrally formed with the first well at a fourth region adjacent to the first region, a fifth well in the first conductivity type which is formed at the third region to be shallower than the third well, and a sixth well in the second conductivity type which is formed at the fourth region to be shallower than the fourth well, are included.. . ... Fujitsu Semiconductor Limited

12/18/14 / #20140367754

Method for manufacturing semiconductor device and semiconductor device

A method for manufacturing a semiconductor device includes, forming, on a substrate, an element isolation insulating film which includes a protruding portion protruding above a level of a surface of the substrate, forming a first film on the substrate and on the element isolation insulating film, polishing the first film to expose the protruding portion, forming a first resist pattern which straddles the first film and the protruding portion after polishing the first film, patterning the first film using the first resist pattern as a mask to form a first pattern, and forming a sidewall film at side surfaces of the first pattern.. . ... Fujitsu Semiconductor Limited








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