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Fujitsu Semiconductor Limited patents (2018 archive)


Recent patent applications related to Fujitsu Semiconductor Limited. Fujitsu Semiconductor Limited is listed as an Agent/Assignee. Note: Fujitsu Semiconductor Limited may have other listings under different names/spellings. We're not affiliated with Fujitsu Semiconductor Limited, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "F" | Fujitsu Semiconductor Limited-related inventors


Semiconductor device having resistance elements and fabrication method thereof

A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration cx. ... Fujitsu Semiconductor Limited

Semiconductor device

There is provided a semiconductor device including a memory region and a logic region. The memory region includes a transistor (memory transistor) that stores information by accumulating charge in a sidewall insulating film. ... Fujitsu Semiconductor Limited

Semiconductor device and full-wave rectifier circuit

One aspect of a semiconductor device includes a plurality of first structures, in which each of the first structures includes: a first n-type region; a p-type region which is surrounded by the first n-type region; and a second n-type region which is surrounded by the p-type region. The first n-type region and the p-type region are wired, and the plurality of first structures are connected in parallel to form one diode.. ... Fujitsu Semiconductor Limited

Tipless transistors, short-tip transistors, and methods and circuits therefor

An integrated circuit can include a plurality of first transistors formed in a substrate and having gate lengths of less than one micron and at least one tipless transistor formed in the substrate and having a source-drain path coupled between a circuit node and a first power supply voltage. In addition or alternatively, an integrated circuit can include minimum feature size transistors; a signal driving circuit comprising a first transistor of a first conductivity type having a source-drain path coupled between a first power supply node and an output node, and a second transistor of a second conductivity type having a source-drain path coupled between a second power supply node and the output node, and a gate coupled to a gate of the first transistor, wherein the first or second transistor is a tipless transistor.. ... Fujitsu Semiconductor Limited

Semiconductor device and semiconductor device fabrication method

A multilayer wiring in a semiconductor device includes a first lower wiring formed in a first insulating layer, a via which is formed in a second insulating layer over the first insulating layer and which is connected to the first lower wiring, and an upper wiring connected to the via. The upper wiring has an outer edge at which a nick portion is formed beside a portion of the upper wiring to which the via is connected. ... Fujitsu Semiconductor Limited

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.. . ... Fujitsu Semiconductor Limited

Semiconductor device manufacturing method

A method of manufacturing a semiconductor device includes the following processes. A metal film forming process in which a metal film including cobalt is formed on a surface of silicon. ... Fujitsu Semiconductor Limited

Semiconductor device including ferroelectric capacitor and method of manufacturing the same

A semiconductor device includes: a semiconductor substrate; a ferroelectric capacitor above the semiconductor substrate; a first guard ring around the ferroelectric capacitor above the semiconductor substrate. The ferroelectric capacitor includes a bottom electrode, a capacitor insulating film and a top electrode. ... Fujitsu Semiconductor Limited

Digital circuits having improved transistors, and methods therefor

Digital circuits are disclosed that may include multiple transistors having controllable current paths coupled between first and second logic nodes. One or more of the transistors may have a deeply depleted channel formed below its gate that includes a substantially undoped channel region formed over a relatively highly doped screen layer formed over a doped body region. ... Fujitsu Semiconductor Limited

Regulator circuit and semiconductor integrated circuit device

A regulator circuit includes a first transistor reducing an external supply voltage and outputting an internal active voltage to an output node; a first detector receiving a criteria level, detecting the internal active voltage based on an enable signal, controlling a gate voltage of the first transistor, and adjusting an output current thereof; a second transistor reducing the external supply voltage, and outputting an internal standby voltage corresponding to the internal active voltage to the output node; a second detector receiving a reference voltage, detecting the internal standby voltage regardless of the enable signal, controlling a gate voltage of the second transistor, and adjusting an output current thereof; a first switch controlling whether to output the reference voltage as the criteria level of the first detector; and a second switch controlling whether to output the voltage of the output node as the criteria level of the first detector.. . ... Fujitsu Semiconductor Limited








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