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Genesis Photonics Inc patents


Recent patent applications related to Genesis Photonics Inc. Genesis Photonics Inc is listed as an Agent/Assignee. Note: Genesis Photonics Inc may have other listings under different names/spellings. We're not affiliated with Genesis Photonics Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "G" | Genesis Photonics Inc-related inventors


Nitride semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. ... Genesis Photonics Inc

Light-emitting device and backlight module using the same

A light-emitting device is provided. The light-emitting device includes a substrate having a long edge and a short edge, at least one electrode pad assembly, and at least one light-emitting element. ... Genesis Photonics Inc

Package substrate and package structure using the same

A package substrate is provided. The package substrate includes a base layer having a first surface and a second surface opposite to the first surface, a plurality of through holes penetrating the base layer, a first metal layer disposed on the first surface, and comprising an encircling portion and a plurality of upper pads arranged separately, wherein the encircling portion surrounds the upper pads to form a trench between the encircling portion and the upper pads, and a second metal layer disposed on the second surface and comprising a plurality of bottom pads arranged separately, wherein the bottom pads are electrically connected to the upper pads via the through holes respectively. ... Genesis Photonics Inc

Light-emitting device

A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. ... Genesis Photonics Inc

Light emitting device structure

A light emitting device structure includes a light emitting device, a molding compound, a transparent substrate and a reflective layer. The light emitting device has an upper surface and a lower surface opposite to each other, a side surface connecting the upper and lower surfaces, and a first pad and a second pad located on the lower surface and separated from each other. ... Genesis Photonics Inc

Flip chip light emitting diode package structure

A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. ... Genesis Photonics Inc

Light emitting device

A light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. ... Genesis Photonics Inc

Manufacturing method for high-voltage light-emitting diode

The disclosure relates to a high-voltage light-emitting diode (hv led) and a manufacturing method thereof. A plurality of led dies connected in series, in parallel, or in series and parallel are formed on a substrate. ... Genesis Photonics Inc

Light emitting device package structure and manufacturing method thereof

A light emitting device package structure and a manufacturing method thereof are provided. The light emitting device package structure includes a light emitting device and a protecting element. ... Genesis Photonics Inc

Light-emitting device and light-emitting module using the same

A light-emitting device and a light-emitting module using the same are provided. The light-emitting device includes a substrate module and a light-emitting component. ... Genesis Photonics Inc

Light-emitting device and manufacturing method thereof

A light-emitting device includes a substrate, a light-emitting component, a translucent layer, an adhesive layer, a reflective layer and translucent encapsulant. The light-emitting component is disposed on the substrate. ... Genesis Photonics Inc

Light emitting diode structure

A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. ... Genesis Photonics Inc

Light emitting diode

An led includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. ... Genesis Photonics Inc

Light emitting device and manufacturing method thereof

A light-emitting device including at least one light-emitting unit, a wavelength conversion adhesive layer, and a reflective protecting element is provided. The light-emitting unit has an upper surface and a lower surface opposite to each other. ... Genesis Photonics Inc

05/03/18 / #20180122984

Method for manufacturing light emitting unit

A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. ... Genesis Photonics Inc

03/29/18 / #20180090639

Micro light emitting diode and manufacturing method thereof

A μled including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. ... Genesis Photonics Inc

03/22/18 / #20180083168

Light emitting component

A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. ... Genesis Photonics Inc

03/22/18 / #20180083162

Semiconductor device containing nitrogen

A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. ... Genesis Photonics Inc

03/22/18 / #20180083108

Nitrogen-containing semiconductor device

A nitrogen-containing semiconductor device including a substrate, a first algan buffer layer, a second algan buffer layer and a semiconductor stacking layer is provided. The first algan buffer layer is disposed on the substrate, and the second algan buffer layer is disposed on the first algan buffer layer. ... Genesis Photonics Inc

02/22/18 / #20180053742

Method of mass transferring electronic device

A method of mass transferring electronic devices includes following steps. A wafer is provided. ... Genesis Photonics Inc

02/15/18 / #20180049319

Light emitting device

A light emitting device includes a light source, a light source carrier and a circuit board. The circuit board is configured to provide power to the light source via the light source carrier. ... Genesis Photonics Inc

02/15/18 / #20180047869

Nitride semiconductor structure and semiconductor light emitting device including the same

A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. ... Genesis Photonics Inc

02/08/18 / #20180040594

Light emitting module

A light emitting module including a light emitting device package structure and a heat dissipation structure is provided. The light emitting device package structure includes light emitting devices, a patterned reflective element and a patterned conductive layer. ... Genesis Photonics Inc

02/01/18 / #20180033914

Thin-film flip-chip light emitting diode having roughening surface and method for manufacturing the same

A thin-film flip-chip light emitting diode (led) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. ... Genesis Photonics Inc

01/18/18 / #20180019232

Light emitting component

A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. ... Genesis Photonics Inc

01/04/18 / #20180006000

Light source device

A light source device including a substrate, a plurality of first light emitting diode (led) chips, and at least one second led chip is provided. The substrate has an upper surface. ... Genesis Photonics Inc

11/23/17 / #20170338375

Light-emitting diode and a method for manufacturing the same

A method for manufacturing a light-emitting diode (led) is provided. The method includes following steps. ... Genesis Photonics Inc

11/09/17 / #20170323870

Light emitting device

A light-emitting device including a light-emitting unit, a packaging sealant, a transparent layer, and a reflective structure is provided. The light-emitting unit has at least one epitaxial layer and two electrodes correspondingly formed on the epitaxial layer. ... Genesis Photonics Inc

10/26/17 / #20170309787

Light emitting diode having distributed bragg reflectors

A light emitting diode (led) having distributed bragg reflector (dbr) and a manufacturing method thereof are provided. The distributed bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. ... Genesis Photonics Inc

10/12/17 / #20170294555

Semiconductor structure

A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising alxinygal-x-yn layers, at least one gan based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. ... Genesis Photonics Inc

10/05/17 / #20170288100

Package method and package

A package method includes steps of providing a light emitting module, a mold and a molding compound, wherein the light emitting module includes a substrate and at least one light emitting unit disposed on the substrate, the mold has at least one recess, and a side wall of the recess is parallel to a side surface of the light emitting unit; filling the recess with the molding compound; placing the substrate on the mold reversely, so that the light emitting unit is immersed into the recess and the molding compound directly encapsulates the light emitting unit; and heating and pressing the substrate and the mold, so as to solidify the molding compound.. . ... Genesis Photonics Inc

10/05/17 / #20170288092

Semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. ... Genesis Photonics Inc

09/14/17 / #20170263814

Semiconductor structure

A semiconductor structure includes a first-type semiconductor layer, a second-type semiconductor layer, a light emitting layer and a hole supply layer. The light emitting layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. ... Genesis Photonics Inc

09/07/17 / #20170256673

Nitride semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. ... Genesis Photonics Inc

06/08/17 / #20170159895

Light emitting device

A light emitting module including a substrate, a plurality of first light emitting diode (led) chips and a plurality of second led chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. ... Genesis Photonics Inc

05/04/17 / #20170125645

Light emitting device

A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. ... Genesis Photonics Inc

03/23/17 / #20170084800

Light emitting device package structure and manufacturing method thereof

A light emitting device package structure includes at least one light emitting device, a wavelength conversion adhesive layer, and a protection element. The light emitting device has an upper surface, a lower surface opposite to the upper surface, and a side surface connecting the upper surface and the lower surface. ... Genesis Photonics Inc

03/23/17 / #20170084791

Light emitting diode device

The present invention relates to a light emitting diode (led) and a flip-chip packaged led device. The present invention provides an led device. ... Genesis Photonics Inc

03/23/17 / #20170084587

Light-emitting device

A light-emitting device includes a substrate, a light-emitting component, a wavelength conversion component, an adhesive and a reflective layer. The light-emitting component is disposed on the substrate. ... Genesis Photonics Inc

03/02/17 / #20170062664

Light emitting diode package structure

A led package structure including a carrier substrate, a flip-chip led and a molding compound is provided. The carrier substrate includes a main body and a patterned conductive layer embedded in the main body. ... Genesis Photonics Inc

03/02/17 / #20170062653

Light emitting diode and manufacture method thereof

A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. ... Genesis Photonics Inc

02/02/17 / #20170033260

Multiple quantum well structure and method for manufacturing the same

A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. ... Genesis Photonics Inc

01/05/17 / #20170005238

Light emitting device and manufacturing method thereof

A light emitting device includes a wavelength conversion layer, at least one light emitting unit and a reflective protecting element. The wavelength conversion layer has an upper surface and a lower surface opposite to each other. ... Genesis Photonics Inc

01/05/17 / #20170005236

Light emitting diode package and light emitting diode module

A light emitting diode (led) package includes at least one light emitting unit having a first electrode and a second electrode, a first molding compound covering a part of the light emitting unit to expose the first electrode and the second electrode, and a first light transmissive plate disposed on the first molding compound opposite the light emitting unit. A side surface of the first molding compound and a side surface of the first light transmissive plate are coplanar or have even adjoined edges.. ... Genesis Photonics Inc








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