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Global Foundries Inc patents


Recent patent applications related to Global Foundries Inc. Global Foundries Inc is listed as an Agent/Assignee. Note: Global Foundries Inc may have other listings under different names/spellings. We're not affiliated with Global Foundries Inc, we're just tracking patents.

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Circuit tuning scheme for fdsoi

A method of circuit tuning, including: applying a first positive voltage and a second positive voltage to a circuit structure, the circuit structure including a p-type metal-oxide semiconductor (pmos) device with a flipped well transistor and an n-type metal-oxide semiconductor (nmos) device; adjusting a first threshold voltage in response to the first positive voltage being applied to a p-well region of the nmos device and adjusting a second threshold voltage in response to the second positive voltage being applied to the p-well region of the pmos device; and compensating the first threshold voltage and the second threshold voltage through a backgate of the pmos device and the nmos device relative to a same common mode voltage.. . ... Global Foundries Inc

Three-dimensional hybrid packaging with through-silicon-vias and tape-automated-bonding

A 3-dimensional hybrid package including an integrated circuit chip stack formed on a laminate, the integrated chip stack further including a first chip and a second chip. The first chip is connected to the laminate through first solder bumps, each associated with a first through-silicon via (tsv), and first metal leads embedded in a first polymer tape that extends from first peripheral metal pads formed on a back side of the first chip to the laminate. ... Global Foundries Inc

Controlling right-of-way for priority vehicles

Various embodiments include approaches for analyzing a set of travel pathways for a priority vehicle. In some cases, an approach includes: obtaining data indicating a location of the priority vehicle and a location of a destination for the priority vehicle; ranking each of a set of paths between the location of the priority vehicle and the location of the destination based upon a travel time for the priority vehicle along the set of paths; and sending instructions to vehicles on a highest-ranked path in the set of paths to initiate providing a right-of-way to the priority vehicle, wherein vehicles closer to the destination along the highest-ranked path are instructed to change a corresponding position prior to vehicles farther from the destination along the highest-ranked path.. ... Global Foundries Inc

Preventing leakage inside air-gap spacer during contact formation

Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. ... Global Foundries Inc

Patterning scheme to minimize dry/wets strip induced device degradation

A patterning scheme to minimize dry/wet strip induced device degradation and resultant devices are provided. The method includes removing a workfunction material over a first device area of a structure, while protecting the workfunction material over a second device area of the structure with a first masking material. ... Global Foundries Inc

Finfet pcm access transistor having gate-wrapped source and drain regions

Embodiments are directed to a method of forming portions of a fin-type field effect transistor (finfet) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least one gate region around the multiple sides of the at least one channel region and forming the at least one gate region around the multiple sides of the at least one drain region.. ... Global Foundries Inc

Methods for producing integrated circuits with interposers and integrated circuits produced from such methods

Methods of producing integrated circuits with interposers and integrated circuits produced from such methods are provided. In an exemplary embodiment, a method of producing an integrated circuit includes producing an interposer with an insulation plate and a plurality of through vias passing through the insulation plate. ... Global Foundries Inc

Increased contact area for finfets

A method for forming fin field effect transistors includes epitaxially growing source and drain (s/d) regions on fins, the s/d regions including a diamond-shaped cross section and forming a dielectric liner over the s/d regions. A dielectric fill is etched over the s/d regions to expose a top portion of the diamond-shaped cross section. ... Global Foundries Inc








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