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Hitachi Kokusai Electric Inc patents


Recent patent applications related to Hitachi Kokusai Electric Inc. Hitachi Kokusai Electric Inc is listed as an Agent/Assignee. Note: Hitachi Kokusai Electric Inc may have other listings under different names/spellings. We're not affiliated with Hitachi Kokusai Electric Inc, we're just tracking patents.

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Substrate processing apparatus

A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.. . ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

There is provided a technique that includes (a) pre-etching a surface of a substrate made of single crystal silicon by supplying a first etching gas to the substrate; (b) forming a silicon film on the substrate with the pre-etched surface, by supplying a first silicon-containing gas to the substrate; (c) etching a portion of the silicon film by supplying a second etching gas, which has a different molecular structure from a molecular structure of the first etching gas, to the substrate; and (d) forming an additional silicon film on the etched silicon film by supplying a second silicon-containing gas to the substrate.. . ... Hitachi Kokusai Electric Inc

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. ... Hitachi Kokusai Electric Inc

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.. . ... Hitachi Kokusai Electric Inc

Substrate processing apparatus, vaporization system and mist filter

A substrate processing apparatus includes a process chamber accommodating a substrate; a gas supply system; and an exhaust system. The supply system includes a vaporizer and a mist filter, the mist filter including a plurality of first plates and a plurality of second plates. ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: forming a film containing a main element, carbon and nitrogen on a pattern formed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing the main element by supplying a precursor, which contains the main element constituting the film to be formed, to the substrate having the pattern; and (b) forming a second layer containing the main element, carbon and nitrogen by supplying a first reactant, which contains carbon and nitrogen, to the substrate so that a substance obtained by decomposing a portion of the first reactant is adsorbed on the first layer.. . ... Hitachi Kokusai Electric Inc

Substrate processing apparatus, substrate container transport system and operation mechanism

A substrate processing apparatus includes a plurality of placement parts on which a substrate container is placed, a driving part configured to move the plurality of placement parts, a transport mechanism configured to load the substrate container into one of the plurality of placement parts and to unload the substrate container from one of the plurality of placement parts, and a controller configured to control the driving pan and the transport mechanism so that by raising or lowering the transport mechanism while keeping a support of the transport mechanism unmoved in an initial position, the substrate container is delivered from one of the plurality of placement parts to the support of the transport mechanism, and the substrate container is delivered from the support of the transport mechanism to one of the plurality of placement parts.. . ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique which includes: forming a first film containing silicon, oxygen, carbon and nitrogen on a substrate by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: forming a first layer containing silicon, oxygen, carbon and nitrogen by simultaneously supplying first aminosilane and an oxidant to the substrate; and performing a first modifying process to the first layer under a first temperature; and performing a second modifying process to the first film under a second temperature that is higher than the first temperature.. . ... Hitachi Kokusai Electric Inc

Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium

There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.. . ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

There is provided a method of manufacturing a semiconductor device which includes: supplying a process gas to a process chamber in a state in which a substrate with an insulating film formed thereon is mounted on a substrate support part inside the process chamber; supplying a first power from a plasma generation part to the process chamber to generate plasma and forming a first silicon nitride layer on the insulating film; and supplying a second power from an ion control part to the process chamber in parallel with the generation of plasma, to form a second silicon nitride layer having lower stress than that of the first silicon nitride layer on the first silicon nitride layer.. . ... Hitachi Kokusai Electric Inc

Substrate processing apparatus

There is provided a substrate processing apparatus which includes: a processing container in which a substrate is accommodated; a substrate supporting part configured to support the substrate inside the processing container and including a support electrode; an upper electrode installed to face the substrate supporting part; a first impedance control part having one end connected to the upper electrode; a second impedance control part having one end connected to the support electrode; a processing gas supply part configured to supply a processing gas to the substrate; an activation part configured to activate the processing gas, the activation part being installed outside the processing container and being connected to a power supply part via an insulating part; and a third impedance control part having one end connected between the insulating part and the activation part.. . ... Hitachi Kokusai Electric Inc

Substrate processing apparatus

Provided is a technique in which a heating-up time inside a process chamber is reduced. The technique includes a substrate processing apparatus including a process chamber where a substrate is processed, a substrate retainer configured to support the substrate in the process chamber, a process gas supply unit configured to supply a process gas into the process chamber, a first heater installed outside the process chamber and configured to heat an inside of the process chamber, a thermal insulating unit disposed under the substrate retainer, a second heater disposed in the thermal insulating unit and configured to heat the inside of the process chamber, and a purge gas supply unit configured to supply a purge gas into the thermal insulating unit to purge an inside of the thermal insulating unit.. ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique which includes: forming a film containing at least si, o and n on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a si—n bond and a si—cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.. . ... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.. . ... Hitachi Kokusai Electric Inc

08/02/18 / #20180216226

Method of manufacturing lithography template

Described herein is a technique capable of improving the quality of a template. According to the technique described herein, there is provided a method of manufacturing a lithography template, including: (a) loading a substrate into a process chamber, the substrate having a pattern region and a non-contacting region at center and peripheral portions thereof, respectively; (b) placing the substrate on a substrate support having a protruding portion and a bottom portion such that a back surface of the non-contacting region of the substrate is supported by the protruding portion; (c) heating the substrate by supplying a first hot gas into a space defined by the protruding portion and the bottom portion while supplying a second hot gas into the process chamber; and (d) processing the substrate after performing (c) by supplying a process gas into the process chamber while supplying the first hot gas into the space.. ... Hitachi Kokusai Electric Inc

07/26/18 / #20180211843

Method of manufacturing semiconductor device

A technique capable of controlling in-plane uniformity of a film formed on a substrate includes a step of forming a film on a substrate by performing a predetermined number of cycles in which a step of supplying a metal-containing gas to the substrate and a step of supplying a reducing gas containing an element that becomes a solid by itself to the substrate are performed in a time-division manner. The reducing gas has a property of changing a deposition rate of the film from an increasing rate to a decreasing rate in accordance with the exposure amount of the reducing gas with respect to the substrate. ... Hitachi Kokusai Electric Inc

07/26/18 / #20180211840

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technology includes: heating a heat insulating plate, which is held by a substrate holder configured to hold a substrate, to a processing temperature, at which the substrate is processed, by an electromagnetic wave supplied from a heating device, and measuring a temperature change of the heat insulating plate until the heat insulating plate reaches the processing temperature; heating the substrate, to the processing temperature and measuring a temperature change of the substrate until the substrate reaches the processing temperature; obtaining a correlation between the temperature change of the heat insulating plate and the temperature change of the substrate and heating the substrate by controlling the heating device based on the temperature of the heat insulating plate and the correlation.. . ... Hitachi Kokusai Electric Inc

07/26/18 / #20180210423

Substrate processing system, substrate processing apparatus and management device

There is provided a configuration that includes a plurality of substrate processing apparatuses and a management device for managing the plurality of substrate processing apparatuses. Upon receiving information specifying a substrate processing apparatus as a reference and file information designating a predetermined device file, the plurality of substrate processing apparatuses transmits request data including first device information and first data information to the management device. ... Hitachi Kokusai Electric Inc

07/19/18 / #20180205867

Imaging device and image processing method

In a method for determining upper and lower limit values for a target brightness when image contrast is extended, an upper and lower limit value search processing unit establishes two adjacent areas in accordance with brightness of a grayscale histogram, and, while scanning the positions of those areas, compares the frequency of those areas to a threshold, and if one frequency value is greater than or equal to the threshold value and the other frequency value is lower than the threshold, performs upper and lower limit value search processing wherein a brightness value at the boundary of the two areas is determined as an upper or lower limit value. Thresholds for upper and lower limit value search start position and frequency are established based on the shape of the grayscale histogram of an image to be processed. ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204768

Method of manufacturing semiconductor device

Described herein is a technique capable of forming a film having excellent step coverage and superior filling properties. According to the technique, there is provided a method of manufacturing a semiconductor device including: (a) preparing a substrate provided with a groove having thereon a base film selected from a group consisting of a metal nitride film and an insulating film; and (b) performing a cycle a predetermined number of time to selectively form a first metal, film at a lower portion of the groove with the base film at an upper portion of the groove exposed, the cycle including: (b-1) supplying a first reducing gas to the substrate; and (b-2) supplying a first, metal-containing gas to the substrate, wherein (b-1) an (b-2) are non-simultaneously performed, and a supply condition of the first reducing gas in (b-1) is adjusted according to am aspect ratio of the groove.. ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204742

Substrate processing apparatus

A substrate processing apparatus, includes: a process chamber accommodating a substrate; a vaporizer vaporizing a liquid precursor to generate reaction gas and deliver a processing gas containing the reaction gas and a carrier gas, the vaporizer including: a vaporization vessel; and a heater heating the liquid precursor introduced into the vessel; a carrier gas flow rate controller controlling flow rate of the carrier gas supplied to the vaporizer; a liquid precursor flow rate controller controlling flow rate of the liquid precursor; a processing gas supply pipe introducing the processing gas delivered from the vaporizer into the process chamber; and a gas concentration sensor detecting a gas concentration of the reaction gas contained in the processing gas delivered from the vaporizer into the processing gas supply pipe.. . ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204735

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provide a technique that includes preparing a substrate, in which an insulating film is formed on a pattern having an aspect ratio of 20 or greater and a process target film having a thickness of 200 Å or smaller is formed on the insulating film, in a process chamber; raising a temperature of the substrate to a first temperature with an electromagnetic wave; crystallizing the process target film for a first process time period while maintaining the first temperature; raising the temperature of the substrate to a second temperature, which is higher than the first temperature, with the electromagnetic wave, after the act of crystallizing the process target film; and repairing a crystal defect of the crystallized process target film for a second process time period, which is shorter than the first process time period, while maintaining the second temperature.. . ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204732

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.. . ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204720

Substrate processing apparatus

Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.. ... Hitachi Kokusai Electric Inc

07/19/18 / #20180204335

System for tracking object, and camera assembly therefor

Disclosed is an autonomous distributed system for detecting and tracking a falling object within a region being monitored by using a plurality of camera assemblies cooperating with each other, and disclosed is a camera assembly therefor. Each of the camera assembly, normally, operates in a falling object detecting mode, but, when detecting a falling object, shifts to a tracking mode. ... Hitachi Kokusai Electric Inc

07/19/18 / #20180202043

Gas supply system, substrate processing apparatus, and method of manufacturing semiconductor device

A gas supply system for improving concentration uniformity of a process gas supplied to substrates arrayed in a longitudinal direction includes first and second gas supply tubes that supply process gas from respective upper ends, and configured to supply the process gas for processing substrates to a process chamber that accommodates a plurality of the substrates arrayed in a longitudinal direction, wherein l1 is configured to be longer than l2 and s1 is configured to be smaller than s2, when the length of the first gas supply tube facing a substrate arrangement region where the substrates are arranged is l1, the flow path sectional area of the first gas supply tube is s1, the length of the second gas supply tube facing the substrate arrangement region is l2, and the flow path sectional area of the second gas supply tube is s2.. . ... Hitachi Kokusai Electric Inc

07/12/18 / #20180197877

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes: loading a substrate including a laminated film including an insulating film and a sacrificial film, a channel hole formed in the laminated film, a charge trapping film formed on a surface in the channel hole, a first channel film formed on a surface of the charge trapping film, and a common source line exposed on the bottom of the channel hole; receiving information on a distribution of hole diameter of the channel hole; and forming a second channel film on a surface of the first channel film by supplying a first processing gas and a second processing gas to a center side and an outer peripheral side of the substrate, respectively, so as to correct the distribution of the hole diameter based on the information.. . ... Hitachi Kokusai Electric Inc

07/12/18 / #20180197000

Image processing device and image processing system

An image processing device or a method of processing an image is disclosed. The method includes receiving an image, detecting a plurality of person images in the image, identifying at least a first person image from among the plurality of person images by a preferential method, identifying at least a second person image from among the plurality of person images excluding the first person image, by an exhaustive method, and extracting a first feature amount as to the first person image and a second feature amount as to the second person image during a time interval. ... Hitachi Kokusai Electric Inc

07/05/18 / #20180191324

Matching box and matching method

A matching box comprises a directional coupler that detects forward waves and reflected waves; a matching circuit having a first variable capacitance capacitor, a second variable capacitance capacitor, and inductance; and a control unit that calculates a reflection coefficient on the basis of the forward waves and the reflected waves, and controls a capacitance value vc1 of the first variable capacitance capacitor and a capacitance value vc2 of the second variable capacitance capacitor, wherein the control unit changes vc2 if the distance between a matching circle drawn by the trajectory of the reflection coefficient passing through a matching point on a smith chart, and the calculated reflection coefficient is greater than a prescribed value, and changes vc1 if such distance is set to be no greater than the prescribed value and when the value of such distance becomes no greater than the prescribed value, thereby reducing the reflection coefficient.. . ... Hitachi Kokusai Electric Inc

07/05/18 / #20180191316

Power amplifying device

An outphasing power amplifying device includes a switching signal generating circuit configured to generate a switching pulse signal for switching a class-d power amplifier from two types of sinusoidal wave generated based on amplitude and phase of a modulated wave to be transmitted. The switching signal generating circuit includes: a sin calculation unit and a cos calculation unit for converting phase information of the two types of sinusoidal wave into a quadrature format; a da converter for converting the quadrature-format phase information; a first filter for removing an aliasing component from the analogue signal; an analogue quadrature modulator for generating a sinusoidal wave from the analogue signals by using a local signal; a second filter for allowing a radio frequency and a component in the vicinity thereof to pass therethrough; and a comparator for converting the sinusoidal wave into a switching pulse signal by comparison with a reference voltage.. ... Hitachi Kokusai Electric Inc

07/05/18 / #20180190496

Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and supply system

A method of manufacturing a semiconductor device, includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying two or more kinds of halogen-based precursors having the same major elements and different halogen elements, or different major elements and the same halogen elements, or different major elements and different halogen elements to the substrate while overlapping at least portions of supply periods of the two or more kinds of halogen-based precursors; and supplying a reactant having a chemical structure different from chemical structures of the two or more kinds of halogen-based precursors to the substrate.. . ... Hitachi Kokusai Electric Inc

07/05/18 / #20180189942

Monitoring system, photography-side device, and verification-side device

Provided is a monitoring system, comprising a imaging-side device, and a matching-side device which receives image data from the imaging-side device and matches the image data. The imaging-side device wirelessly transmits, to the matching-side device, feature value data which denotes feature of an image subject. ... Hitachi Kokusai Electric Inc

07/05/18 / #20180187307

Substrate processing apparatus, and method for manufacturing semiconductor device

Provided is a technique capable of purging a adiabatic region without adversely affecting a processing region. A process chamber including a processing region for processing a substrate and a adiabatic region located below the processing region is included inside. ... Hitachi Kokusai Electric Inc

06/28/18 / #20180182619

Method of manufacturing semiconductor device

A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.. ... Hitachi Kokusai Electric Inc

06/28/18 / #20180182601

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Described herein is a technique capable of uniformly processing substrates. According to the technique described herein, there is provided a substrate processing apparatus including: a process chamber where a substrate is processed; a gas supply configured to supply a gas into the process chamber; a plasma generator configured to plasma-excite the gas supplied into the process chamber, the plasma generator including an electrode electrically connected to a high frequency power source; an impedance meter configured to measure an impedance of the plasma generator; a determiner configured to determine an amount of active species generated by the plasma generator based on the impedance measured by the impedance meter; and a controller configured to control the high frequency power source based on the amount of active species determined by the determiner.. ... Hitachi Kokusai Electric Inc

06/28/18 / #20180179628

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: (a) processing a substrate accommodated in a process chamber by supplying an inert gas into a tank storing a precursor via a first supply pipe, supplying the precursor from an interior of the tank into the process chamber via a second supply pipe connected to the first supply pipe by a connection pipe, and exhausting the precursor from the interior of the process chamber; and (b) purging an interior of the first supply pipe, an interior of the connection pipe and an interior of the second supply pipe by alternately repeating: supplying a heated inert gas into the first supply pipe, the connection pipe and the second supply pipe, and exhausting the heated inert gas; and vacuumizing the interior of the first supply pipe, the interior of the connection pipe, and the interior of the second supply pipe.. . ... Hitachi Kokusai Electric Inc

06/21/18 / #20180174877

Substrate processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus includes an accommodating chamber including a loading shelf configured to load a storage vessel that accommodates a substrate; a transfer mechanism installed in a ceiling part of the accommodating chamber and configured to hold an upper portion of the storage vessel and transfer the storage vessel; and a port configured to load and unload the storage vessel to and from the accommodating chamber.. . ... Hitachi Kokusai Electric Inc

06/21/18 / #20180171467

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

A technique capable of controlling a film thickness distribution formed on a surface of a substrate includes: forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a source to the substrate accommodated in a process chamber; (b) exhausting the source from the process chamber; (c) supplying a reactant to the substrate accommodated in the process chamber; and (d) exhausting the reactant from the process chamber, wherein (a) through (d) are performed non-simultaneously, and the cycle further includes at least one of: (e) starting a next step with the source remaining in a center portion of a substrate surface after a first predetermined time elapses from a start of (b); and (f) starting a next step with the reactant remaining in the center portion of the substrate's surface after a second predetermined time elapses from a start of (d).. . ... Hitachi Kokusai Electric Inc

06/14/18 / #20180167042

Power amplifier and radio transmitter

A power amplifier includes a carrier amplifier that operates from when an input signal is small, a peak amplifier that starts to operate when the input signal becomes large, a phase adjusting circuit that adjusts phases of an output of the carrier amplifier and an output of the peak amplifier, an impedance transforming line that transforms a load of the carrier amplifier when the input signal is small, and has a characteristic impedance close to an optimum load impedance of the carrier amplifier, and a circuit that is arranged between the output of the carrier amplifier and the impedance transforming line and reduces an output capacitance of the carrier amplifier.. . ... Hitachi Kokusai Electric Inc

06/14/18 / #20180164702

Substrate processing apparatus

Described herein is a technique capable of suppressing a generation of particles. A substrate processing apparatus may include: a substrate support including: a protruding portion supporting a substrate including a pattern region at a center thereof and a non-contacting region at a periphery thereof; and a bottom portion defining a space along with the protruding portion; a process chamber wherein the substrate support is provided and the substrate is processed; a process gas supply unit configured to supply a process gas into the process chamber; and a hot gas supply unit configured to heat and supply an inert gas into the space.. ... Hitachi Kokusai Electric Inc

06/07/18 / #20180158714

Substrate processing apparatus

A substrate processing apparatus and technique, capable of processing substrates regardless of the types of substrates, include a loadlock chamber accommodating a first support part and a second support part for supporting a wafer; a first transfer mechanism including first tweezers configured to transfer the substrate into or out of the loadlock chamber through a first side of the loadlock chamber; a second transfer mechanism including second tweezers configured to transfer the substrate into or out of the loadlock chamber through a second side of the loadlock chamber; and a reactor where the substrate is processed. The first support part includes first support mechanisms spaced apart by a first distance along a direction perpendicular to an entering direction of the first tweezers or the second tweezers, and the second support part includes second support mechanisms spaced apart by a second distance smaller than the first distance.. ... Hitachi Kokusai Electric Inc

05/31/18 / #20180151347

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) forming a first layer by supplying a precursor to the substrate from a first nozzle and (b) forming a second layer by supplying a reactant to the substrate from a second nozzle different from the first nozzle to thereby modify the first layer. ... Hitachi Kokusai Electric Inc

05/31/18 / #20180148834

Substrate processing apparatus and method of manufacturing semiconductor device

Described herein is a technique capable of shortening the time required to reduce the oxygen concentration in a transfer chamber. According to the technique described herein, there is provided a substrate processing apparatus including: a transfer chamber wherein a substrate from a container is transported; a transfer robot configured to transfer the substrate through the transfer chamber; a purge gas supply mechanism configured to supply a purge gas into the transfer chamber; and a pressure control mechanism configured to control an inner pressure of the transfer chamber wherein the pressure control mechanism is provided at an exhaust channel wherethrough an inner atmosphere of the transfer chamber is exhausted, the pressure control mechanism including: an exhaust damper configured to fully open or fully close the exhaust channel; and an adjusting damper provided in the exhaust damper and configured to maintain the inner pressure of the transfer chamber at predetermined pressure.. ... Hitachi Kokusai Electric Inc

05/24/18 / #20180145709

Noise canceler

In a noise canceler, interference signals received by sub-antennas 12 are cross-correlated by a first correlation-value calculation unit and the peaks of the interference signals are detected by a first peak detector. Interference signal information is acquired by a first-interference-signal information acquisition unit and the interference signals are synthesized by an interference signal synthesizer. ... Hitachi Kokusai Electric Inc

05/24/18 / #20180144953

Substrate processing apparatus, exhaust system and method of manufacturing semiconductor device

A configuration capable of increasing an exhaust capability of an apparatus without degrading an operation of the apparatus includes: a processing furnace; an exhaust unit configured to exhaust a gas from a process chamber defined by the processing furnace, the exhaust unit having a first sidewall and a second sidewall opposite to the first sidewall; and an exhaust device disposed adjacent to the exhaust unit and connected to the exhaust unit via a connecting pipe provided with a vibration-absorbing member, the exhaust device having a first sidewall and a second sidewall opposite to the first sidewall, wherein the processing furnace, the exhaust unit and the exhaust device are disposed on a same plane, and only the first sidewall of the first and the second sidewalls of the exhaust device is disposed in a space defined by extensions of the first and the second sidewalls of the exhaust unit.. . ... Hitachi Kokusai Electric Inc

05/24/18 / #20180144908

Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber. ... Hitachi Kokusai Electric Inc

05/24/18 / #20180142353

Reaction tube structure and substrate processing apparatus

A substrate processing apparatus includes a reaction tube defining a substrate processing chamber; a gas inlet provided at a lower portion of the reaction tube to supply a process gas; a first buffer unit for temporarily retaining the process gas, the first buffer unit at a first side of an inner surface of the reaction tube and includes a plurality of gas supply holes; and a gas outlet provided at a second side of the inner surface of the reaction tube opposite to the first side, to exhaust the process gas from the process chamber. The gas supply holes are provided from an upper end portion of the first buffer unit to a lower end portion of the first buffer unit, and the process gas is supplied through the plurality of gas supply holes into the process chamber, passes through the process chamber, and exhausted through the gas outlet.. ... Hitachi Kokusai Electric Inc

05/17/18 / #20180135176

Substrate processing apparatus, method for manufacturing semiconductor device and vaporizer

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. ... Hitachi Kokusai Electric Inc

05/10/18 / #20180131393

Receiver, wireless communication system, and wireless communication method

A wireless communication technique in which information that has been encoded and interleaved (the sequence of bits has been rearranged) on the transmission side is subjected to iterative decoding processing by using a demodulator, a deinterleaver, a decoder, and an interleaver on the receiving side.. . ... Hitachi Kokusai Electric Inc

05/10/18 / #20180130664

Method of manufacturing semiconductor device

In a method of manufacturing a semiconductor device, by performing a predetermined number of times a cycle of performing supplying reducing gas to a substrate having an insulating surface and a conductive surface and supplying metal-containing gas to the substrate in a time-division manner, a metal film is formed selectively on an insulating surface.. . ... Hitachi Kokusai Electric Inc

05/03/18 / #20180120822

Substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique for detecting a fault of a device from an error in device data. According to the technique described herein, there is provided a substrate processing apparatus including: a pipe heater configured to heat a gas pipe; a temperature detecting unit provided at the pipe heater and configured to detect a temperature of the gas pipe; a control unit configured to control the pipe heater based on device data representing the temperature of the gas pipe measured by the temperature detecting unit by executing a process control program to adjust an electrical power applied to the pipe heater; a memory unit configured to store a monitored item table; and a device status monitoring unit configured to execute a device status monitoring program.. ... Hitachi Kokusai Electric Inc

03/29/18 / #20180090502

Method of manufacturing semiconductor device

Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and a width of a second pillar between second grooves in a peripheral region of the substrate; and (b) forming a width adjusting film on surfaces of the first grooves and the second grooves such that a sum of the width of the first pillar and a thickness of a first portion of the width adjusting film in the center region and a sum of the width of the second pillar and a thickness of a second portion of the width adjusting film in the peripheral region are within a predetermined range.. ... Hitachi Kokusai Electric Inc

03/29/18 / #20180090397

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an evaluation factor corresponding to the first process setting and the apparatus data; determining one or more recipe items executable in the processing apparatus based on the first evaluation data; and notifying the one or more recipe items.. . ... Hitachi Kokusai Electric Inc

03/29/18 / #20180090310

Method of manufacturing semiconductor device

Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by supplying a silicon-containing gas to the substrate; (c) forming a silicon/oxygen-containing film by supplying a first plasma of an oxygen-containing gas to the substrate; and (d) forming a silicon oxide film by supplying a second plasma of the oxygen-containing gas to the substrate after performing (c).. ... Hitachi Kokusai Electric Inc

03/29/18 / #20180087709

Substrate processing apparatus and heat insulating pipe structure

A configuration including a process chamber for processing a substrate, a gas supply system including supply pipe for supplying a source gas into the process chamber, and an exhaust system including exhaust pipe for discharging an exhaust gas containing the source gas from the process chamber, in which at least one of the supply pipe and the exhaust pipe includes an inner pipe constituting a first flow path of the source gas or the exhaust gas, a member provided outside the inner pipe and constituting a second flow path between the member and an outer wall of the inner pipe, and an outer pipe provided surrounding the inner pipe in order to provide a space between the outer pipe and an outside of the member.. . ... Hitachi Kokusai Electric Inc

03/29/18 / #20180087152

Substrate processing apparatus, nozzle base, and manufacturing method for semiconductor device

Provided is a processing container formed of a reaction tube and a manifold that supports the reaction tube from below, and adapted to process a substrate inside, a nozzle adapted to supply a processing gas to the substrate, and a connecting portion adapted to erect the nozzle inside the processing container. The connecting portion includes (1) a fixing portion formed of a cylindrical portion inserted into an introduction portion provided at the manifold, and a flange plate formed at an end portion of the cylindrical portion, and (2) a detachable portion formed of an elbow engaged with the flange plate, and an installation portion in which the nozzle is installed.. ... Hitachi Kokusai Electric Inc

03/22/18 / #20180080122

Method of manufacturing semiconductor device

A technique for forming a metal film having a high work function while suppressing an increase in eot is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal layer containing a first metal element; and (b) performing a second cycle to form a second metal layer containing a second metal element directly on the first metal layer, wherein a binding energy of second metal element with oxygen is higher than that of the first metal element with oxygen, wherein a cycle including (a) and (b) is performed a second number of times to form a conductive film containing the first metal element and the second metal element on a substrate, the conductive film having: a work function higher than the first metal layer; and a binding energy with oxygen higher than that of the first metal element with oxygen.. ... Hitachi Kokusai Electric Inc

03/22/18 / #20180078997

Liquid-cooling cold plate and method for manufacturing same

In a method of manufacturing a liquid-cooling cold plate, cast molding is performed after embedding a metal pipe for supplying a cooling liquid inside a casting mold. Fixing brackets to be attached to the metal pipe is provided to maintain a positional relationship between a plurality of portions of the metal pipe embedded in the casting mold. ... Hitachi Kokusai Electric Inc

03/15/18 / #20180077433

Video surveillance system and video surveillance method

A video surveillance system includes surveillance cameras; a video converting and combining unit; an encoder for encoding a combined video from the video converting and combining unit; a decoder for decoding the combined video transmitted from the encoder; a video converting and splitting unit for splitting the combined video decoded by the decoder into the videos captured by the surveillance cameras; and a display device for displaying the videos inputted from the video converting and splitting unit. When combining the videos into one combined video, the video converting and combining unit appends assignment information in which each of the surveillance cameras, rotation information indicating application of a rotation process, and division information indicating whether the corresponding video is a left half video or a right half video are associated with one another. ... Hitachi Kokusai Electric Inc

03/15/18 / #20180076063

Substrate processing apparatus

A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a first gas, a second gas and a third gas to the substrate; a power supply unit; a control unit controlling the elevating unit, the gas supply unit and the power supply unit so as to: (a) perform the first process by supplying the second gas activated by the first electrode and the first gas to the substrate; (b) move the substrate on the substrate support unit from the first process chamber to the second process chamber after (a); and (c) perform the second process by supplying the third gas activated by the second electrode to the substrate after (b).. . ... Hitachi Kokusai Electric Inc

03/15/18 / #20180076017

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant from a second nozzle to the substrate and exhausting the first reactant from the exhaust port; and supplying a second reactant from a third nozzle to the substrate and exhausting the second reactant from the exhaust port. ... Hitachi Kokusai Electric Inc

02/22/18 / #20180053984

Wilkinson combiner and wilkinson divider

A wilkinson combiner includes: a plurality of splitting units that splits signals inputted from two ports; an isolating unit that connects one ends of the signals split at the plurality of splitting units to each other; and a combiner that connects other ends of the signals split at the plurality of splitting units to each other and outputs a combined signal. The isolating unit balun-connects the connected signals to each other using a balun circuit, short-circuits the balun-connected one end, and terminates the balun-connected other end using a terminator.. ... Hitachi Kokusai Electric Inc

02/15/18 / #20180049110

Wireless communication system, mobile communication apparatus, and terminal device

A wireless communication system comprises a mobile communication apparatus, and a terminal device. The mobile communication apparatus comprises a first wireless unit that wirelessly communicates control information to and from the terminal device in a first communication method, and a second wireless unit that wirelessly communicates user information to and from the terminal device in a second communication method that uses a higher frequency band than the first communication method. ... Hitachi Kokusai Electric Inc

02/15/18 / #20180048379

Wireless communication system and wireless communication method

Provided is a technique for efficiently using a channel bandwidth in a wireless communication system provided with a function for dividing a frequency channel into a plurality of segments and performing relay using the segments that differ from relay section to relay section. In a second scheme, an upstream direction of a first relay section is a dl section, and two segments are used. ... Hitachi Kokusai Electric Inc

02/15/18 / #20180044794

Cleaning method, method of manufacturing semiconductor device and substrate processing apparatus

A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.. . ... Hitachi Kokusai Electric Inc

02/08/18 / #20180040520

Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support

A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed to extend in a vertical direction in contact with an outer wall of the reaction tube; an insulating tube disposed inside the protection tube and having through-holes extending in a vertical direction; a thermocouple having a thermocouple junction provided at an upper end thereof, and thermocouple wires joined at the thermocouple junction and inserted into the through-holes of the insulating tube; a gas supply unit configured to supply a gas, for processing a substrate accommodated in the reaction tube, into the reaction tube; and an exhaust unit configured to exhaust a gas from the reaction tube.. . ... Hitachi Kokusai Electric Inc

02/08/18 / #20180040488

Substrate processing apparatus, recording medium, and fluid circulation mechanism

A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a pipe part constituting a flow path through which the fluid flows from the suction part to a supply part, and a cooling mechanism, provided in the flow path, for cooling the fluid, and a control part for controlling the fluid circulation mechanism and the elevating mechanism to circulate the fluid sucked from the suction part through the flow path, and supply the fluid from the supply part to the preparatory chamber. The cooling mechanism is disposed adjacent to the suction part to cool the fluid introduced from the suction part before circulating the fluid through the flow path.. ... Hitachi Kokusai Electric Inc

02/08/18 / #20180040475

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of the first amorphous silicon film is maintained, in the process chamber.. ... Hitachi Kokusai Electric Inc

02/01/18 / #20180033666

Teaching jig, substrate processing apparatus, and teaching method

A teaching jig includes: a first plate that determines a substrate loading position in a forward/backward direction with respect to a substrate holder which holds a substrate; a second plate that determines the substrate loading position in a leftward/rightward direction with respect to the substrate holder, the second plate being installed to be perpendicular to the first plate and movable in the forward/backward direction; and a positioning target pin installed in the first plate.. . ... Hitachi Kokusai Electric Inc

02/01/18 / #20180033645

Substrate processing apparatus, lid cover and method of manufacturing semiconductor device

A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process gas supply mechanism configured to supply a process gas; a purge gas supply unit configured to supply a purge gas to a lower region of the process vessel via a gap between the insulating structure and the lid; and a restrictor disposed in the gap. The restrictor regulates flow of the purge gas such that the flow rate of the purge gas supplied to a first portion of the lower region of the process vessel is greater than a flow rate of the purge gas supplied to a second portion of the lower region of the process vessel.. ... Hitachi Kokusai Electric Inc

02/01/18 / #20180033607

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which satisfies an octet rule and has a first pyrolysis temperature, to the substrate and supplying the second precursor, which does not satisfy the octet rule and has a second pyrolysis temperature lower than the first pyrolysis temperature, to the substrate. ... Hitachi Kokusai Electric Inc

01/25/18 / #20180026588

Doherty amplifier and power amplifier

A doherty amplifier used in a z ohm based system is provided with a carrier amplifier, a peak amplifier, and an impedance transforming line for transforming the load of the carrier amplifier when an input signal is small. The impedance transforming line has a characteristic impedance lower than z ohms and equal to the optimum load impedance of the carrier amplifier. ... Hitachi Kokusai Electric Inc

01/25/18 / #20180025920

Substrate processing apparatus

A substrate processing apparatus includes: a plurality of modules configured to process a substrate; a transfer chamber adjoining the modules; a transfer part configured to transfer the substrate to one of the modules; a reception part configured to receive process information of the substrate; a detection part configured to detect quality information of the respective modules; a table in which the process information corresponds to the quality information; a memory part configured to store the table; and a controller configured to compare the process information received by the reception part with the quality information detected by the detection part using the table, configured to select one of the modules corresponding to the process information, and configured to instruct the transfer part to transfer the substrate to the selected module.. . ... Hitachi Kokusai Electric Inc

01/25/18 / #20180024536

Substrate processing apparatus and recording medium

A substrate processing apparatus includes a data collection controller and an operation part. The data collection controller is configured to hold monitoring item list information and component management information. ... Hitachi Kokusai Electric Inc

01/04/18 / #20180007699

Communication timing control method, communication service system and wireless communication terminal

A communication timing control method for a communication service system provided with wireless communication devices, a wireless network, and an upper server groups the wireless communication devices using device information including characteristics of a service provided to the wireless communication devices entering the communication service system via the wireless network, characteristics of communication data handled in an execution application for receiving the provided service, and transfer characteristics of the wireless communication devices receiving the provided service. Next, a group-specific communication timing is determined for the grouped wireless communication devices. ... Hitachi Kokusai Electric Inc

12/28/17 / #20170372894

Method of manufacturing semiconductor device

Described herein is a technique capable of improving the productivity of manufacturing of a semiconductor device in a method of processing a film by repeating different processes. A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process vessel; (b) forming a first layer by supplying a first gas into the process vessel by a gas supply unit while maintaining the substrate at a first temperature by a temperature control unit; and (c) forming a second layer different from the first layer by supplying a second gas different from the first gas into the process vessel by the gas supply unit while maintaining the substrate at a second temperature different from the second temperature by the temperature control unit.. ... Hitachi Kokusai Electric Inc

12/28/17 / #20170372890

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to the substrate in the process chamber and exhausting the reactant from a second exhaust system. ... Hitachi Kokusai Electric Inc

12/21/17 / #20170365467

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.. . ... Hitachi Kokusai Electric Inc

12/21/17 / #20170365459

Method for manufacturing semiconductor device and recording medium

To reduce a hydroxy group in a silicon oxide film formed at a low temperature and obtain a silicon oxide film with an excellent film quality, (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° c. Or lower is formed in a processing container, (b) plasma-exciting a hydrogen gas, and a step of supplying hydrogen active species generated in (b) to the substrate are performed.. ... Hitachi Kokusai Electric Inc

12/14/17 / #20170358506

Method of manufacturing semiconductor device

Provided is a technique capable of obtaining a satisfactory yield for a semiconductor device with an air gap. The technique includes a method of manufacturing a semiconductor device, including: (a) receiving a thickness information of a wiring layer formed on a substrate including: a first interlayer insulation film; and the wiring layer disposed on the first interlayer insulation film, the wiring layer including: copper-containing films used as wiring; and an inter-wiring insulation film having trenches filled with the copper-containing films and insulating the copper-containing films; (b) placing the substrate on a substrate support installed in a process chamber; and (c) etching the wiring layer using an etching gas based on an etching control value corresponding to the thickness information of the wiring layer.. ... Hitachi Kokusai Electric Inc

12/07/17 / #20170353993

Wireless communication system

In a wireless communication system, a plurality of communication devices performs transmission and reception, each communication device including a signal processing unit/transmitting unit, a mac layer processing unit and an ip layer processing unit. The ip layer processing unit includes an ad hoc network processing unit, an address information management unit, a relay information storage unit and an arp information storage unit. ... Hitachi Kokusai Electric Inc

12/07/17 / #20170352745

Method of manufacturing semiconductor device

Described is a technique for uniformly doping a silicon substrate having a fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including: (a-1) forming a first dopant-containing film by supplying a first dopant-containing gas containing the dopant and a first ligand to a substrate having thereon the silicon film and one of a silicon oxide film and a silicon nitride film; and (a-2) forming a second dopant-containing film by supplying a second dopant-containing gas containing the dopant and a second ligand different from and reactive with the first ligand to the substrate; and (b) forming a doped silicon film by annealing the substrate having the dopant-containing film thereon to diffuse the dopant into the silicon film.. ... Hitachi Kokusai Electric Inc

12/07/17 / #20170352556

Substrate-processing apparatus and method of manufacturing semiconductor device

A substrate processing apparatus includes a process chamber and a transfer device configured to transfer a plurality of substrates to a substrate retainer. The transfer device includes a base; a first moving unit capable of linear motion; a first drive unit to drive the first moving unit. ... Hitachi Kokusai Electric Inc

12/07/17 / #20170351924

Crowd monitoring system

The present invention provides a crowd monitoring system with which it is possible to obtain a crowd density accurately, irrespective of the congestion state. This crowd monitoring system 100 is provided with: an image acquiring unit 101 which acquires a plurality of images; an arithmetic logic unit 108; and a storage unit 106 which stores information relating to relationships between image feature quantities and an object density, acquired in advance, and information relating to relationships between motion feature quantities and the object density. ... Hitachi Kokusai Electric Inc

11/30/17 / #20170345645

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas in the process chamber, and oxidizing the film while maintaining the temperature of the substrate at the second temperature under an atmosphere containing a second oxygen-containing gas in the process chamber.. . ... Hitachi Kokusai Electric Inc

11/30/17 / #20170345617

Substrate processing apparatus

A substrate processing apparatus capable of suppressing the effects of plasma on a structure formed on a substrate includes: a process chamber where a substrate is processed; a substrate support unit; a gas supply unit to supply a gas to the substrate via a buffer chamber; an electrode including a gas flow channel in communication with the buffer chamber; an insulating plate including a first hole adjacent to the gas flow channel; a dispersion unit including a second hole adjacent to the first hole and in communication with the gas flow channel; a power supply unit; and a control unit to: control the gas supply unit to supply the gas into a plasma generation region in the second hole downstream of the insulating plate; and control the power supply unit to supply electrical power to the electrode to generate a plasma of the gas in the plasma generation region.. . ... Hitachi Kokusai Electric Inc

11/23/17 / #20170339350

Mobile studio and method for using mobile studio

A mobile studio and a method for using the mobile studio are disclosed. The mobile studio is provided with lower and upper frameworks. ... Hitachi Kokusai Electric Inc

11/23/17 / #20170338106

Substrate processing method and substrate processing apparatus

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation of a mixed gas of hydrogen gas and oxygen-containing gas and oxidizing the silicon exposed on the surface of the substrate by exposing the surface of the substrate to the hydrogen radicals and hydroxyl radicals to obtain the substrate on which the metal and oxidized silicon are formed.. . ... Hitachi Kokusai Electric Inc

11/23/17 / #20170335458

Substrate processing apparatus, heater and method of manufacturing semiconductor device

Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; an upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and a heating element disposed inside the annular member.. ... Hitachi Kokusai Electric Inc

11/23/17 / #20170335452

Substrate treatment apparatus, reaction tube and semiconductor device manufacturing method

A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction tube, and an extension portion formed to extend downward from a lower end of the flange, the extension portion being formed to have a thickness larger than a thickness of the reaction tube at a position corresponding to the substrate treatment region, and being configured to cover an inner circumferential surface of the furnace opening member. ... Hitachi Kokusai Electric Inc

10/26/17 / #20170309490

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer on the substrate, and (b) forming a second amorphous metal layer on the first amorphous metal layer by time-divisionally supplying, a predetermined number of times, the metal-containing gas and a second reducing gas to the substrate on which the first amorphous metal layer is formed; and forming a crystallized metal layer on the substrate by simultaneously supplying the metal-containing gas and the first reducing gas to the substrate on which the amorphous metal film is formed.. . ... Hitachi Kokusai Electric Inc

10/12/17 / #20170295302

Image capturing method and image capturing apparatus

A color-separation optical system for image capture includes three rolling shutter cmos image capturing elements of b, g and r, respectively capturing: an image of b at the speed of an integer n multiple of the number of output picture frames, an image of g at the speed of an integer m multiple of n+1, and an image of r at the speed of the integer m multiple of n+1. The vertical synchronization phases of the captured image frames of b, g and r, are offset by approximately half the vertical synchronization period of an even multiple of speed such that the center phases of the captured image frames of b, g and r have approximately the same vertical synchronization phase. ... Hitachi Kokusai Electric Inc

10/12/17 / #20170294879

Wireless communication device and power source device

A wireless communication device configured to prevent a transmission time period for sending a wireless signal and a receiving time period for receiving a wireless signal from being overlap, comprises: a transmitter that includes an orthogonal modulator that orthogonally modulates an iq-modulated modulation signal and a transmission power amplifier that power-amplifies the orthogonally modulated signal; a receiver that includes a demodulator that demodulates a received signal; a first power source that is the power source for the transmission power amplifier and the receiver; and a second power source that is the power source for the orthogonal modulator; and a controller which outputs the modulation signal to the orthogonal modulator. The first power source outputs a constant voltage to the receiver during the receiving time period, and outputs, during the transmission time period, to the transmission power amplifier, a fluctuating voltage according to an envelope of the modulation signal.. ... Hitachi Kokusai Electric Inc

10/12/17 / #20170294318

Substrate processing device, manufacturing method for semiconductor device, and reaction tube

A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured to exhaust an internal atmosphere of the reaction tube. The reaction tube includes: a cylindrical portion; a gas supply area formed outside one side wall of the cylindrical portion and connected to the processing gas supply system; and a gas exhaust area formed outside the other side wall of the cylindrical portion opposed to the gas supply area and connected to the exhaust system. ... Hitachi Kokusai Electric Inc

10/12/17 / #20170294305

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying a non-halogen-based second process gas to the substrate in the process chamber. ... Hitachi Kokusai Electric Inc

10/12/17 / #20170294302

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including supplying a precursor to the substrate and supplying a borazine compound to the substrate; and supplying an oxidizing agent to the substrate.. . ... Hitachi Kokusai Electric Inc

10/12/17 / #20170292188

Substrate processing apparatus

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.. . ... Hitachi Kokusai Electric Inc

10/05/17 / #20170289912

Communication control method for communication terminal device, and communication terminal device

In a communication control method for a communication terminal device including a plurality of communication units corresponding to different communication schemes or communication systems to perform communication in parallel, when a first communication unit performs transmission, transmission/reception of another communication unit is stopped. Then, a transmission/reception stop duration of the another communication unit is set to be equal to or less than a predetermined number of synchronization protection stages.. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170289471

Image pickup device and image pickup method

The purpose of the present invention is to correct the reduced degree of modulation in a diagonal direction in a four-plate camera having a frame memory and r, g1, g2, and b image pickup elements among which two green image pickup elements (g1, g2) shift pixels diagonally. This image pickup method is provided for an image pickup device having two green image pickup elements, a red image pickup element, and a blue image pickup element among which the two green image pickup elements shift pixels diagonally. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170287786

Method of manufacturing semiconductor device

A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the first mask, a process of forming a second mask on a second region of the metal film, and a process of modulating the work function of a second exposed region of the metal film, using plasma of a second process gas are executed.. . ... Hitachi Kokusai Electric Inc

10/05/17 / #20170287731

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: (a) loading into a process chamber a substrate including: a wiring layer including a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wire insulating film electrically insulating the plurality of copper containing film and a recess formed between the plurality of copper-containing film; and a first diffusion barrier film formed on a first portion of a surface of the plurality of copper-containing films to suppress a diffusion of a component of the plurality of copper-containing film; and (b) supplying a silicon-containing gas into the process chamber to form a silicon-containing film on: a surface of the recess; and a second portion of the surface of the plurality of copper-containing films other than the first portion where the first diffusion barrier film is formed.. . ... Hitachi Kokusai Electric Inc

10/05/17 / #20170287716

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170287707

Semiconductor device manufacturing method and recording medium

A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining the coil and the circuit has a length of an integer multiple of a wavelength of an high-frequency power, and a table to mount the substrate under a lower end of the coil; mounting the substrate on the table; supplying the nitrogen-containing gas into the chamber; starting a plasma excitation of the nitrogen-containing gas by applying the high-frequency power to the coil; and nitriding a surface of the substrate with active species containing a nitrogen element at an internal pressure of the chamber ranging from 1 to 100 pa.. . ... Hitachi Kokusai Electric Inc

10/05/17 / #20170287696

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an adaptor; and while maintaining the condition, forming films on the plurality of substrates by performing a cycle including the following steps a predetermined number of times in a non-simultaneous manner: supplying source gas to the plurality of substrates in the processing container from the side of the substrate disposing region; discharging the source gas from the interior of the processing container via exhaust piping; supplying reaction gas to the plurality of substrates in the processing container from the side of the substrate disposing region; and discharging the reaction gas from the interior of the processing container via the exhaust piping.. . ... Hitachi Kokusai Electric Inc

10/05/17 / #20170285613

Substrate processing apparatus, device management controller, and recording medium

A substrate processing apparatus includes a device management controller including a parts management control part configured to monitor the state of parts constituting the apparatus, a device state monitoring control part configured to monitor integrity of device data obtained from an operation state of the parts constituting the apparatus, and a data matching control part configured to monitor facility data provided from a factory facility to the apparatus. The device management controller is configured to derive information evaluating the operation state of the apparatus based on a plurality of monitoring result data selected from a group consisting of maintenance timing monitoring result data acquired by the parts management control part, device state monitoring result data acquired by the device state monitoring control part, and utility monitoring result data acquired by the data matching control part.. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170283950

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part is configured to form a buffer chamber accommodating at least a part of the plasma generation unit and include a gas supply hole through which the activated process gas is supplied to the substrate. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170283949

Substrate processing apparatus

Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate supporter including: a first heater configured to heat the substrate to a first temperature; and a substrate placing surface where the substrate is placed; a heated gas supply system including a second heater configured to heat an inert gas, wherein the heated gas supply system is configured to supply a heated inert gas into the processing vessel; and a controller configured to control the first heater and the second heater such that a temperature of a front surface of the substrate and a temperature of a back surface of the substrate are in a predetermined range.. ... Hitachi Kokusai Electric Inc

10/05/17 / #20170283945

Substrate processing apparatus

A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate support to heat the substrate and the process chamber; a second heating unit disposed in the transfer chamber to heat the transfer chamber; a process gas supply unit to supply a process gas into the process chamber; a first cleaning gas supply unit to supply a cleaning gas into the process chamber; a second cleaning gas supply unit to supply the cleaning gas into the transfer chamber; and a control unit to control the first heating unit, the second heating unit, the process gas supply unit, the first cleaning gas supply unit and the second cleaning gas supply unit.. . ... Hitachi Kokusai Electric Inc

09/21/17 / #20170271176

Substrate processing apparatus

Cleaning processing of each of the inside of a shower head and the inside of a processing space can be sufficiently or appropriately performed even when gas supply is performed via the shower head. A substrate processing apparatus includes a processing space for processing a substrate, a shower head buffer chamber disposed adjacent to the processing space with a dispersion plate having through-holes therebetween, an inert gas supply system configured to supply an inert gas into the shower head buffer chamber to form a gas curtain in the shower head buffer chamber, a first cleaning gas supply system configured to supply a cleaning gas into the processing space, and a control member configured to control the inert gas supply system and the first cleaning gas supply system to concurrently supply the cleaning gas into the processing space and the inert gas into the shower head buffer chamber.. ... Hitachi Kokusai Electric Inc

09/21/17 / #20170271144

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). ... Hitachi Kokusai Electric Inc

09/21/17 / #20170270975

Video recording apparatus and video recording method

A video recording apparatus includes a recording device having a location information area and a video data area. The location information area stores location information of video data stored in the video data area. ... Hitachi Kokusai Electric Inc

09/21/17 / #20170268105

Semiconductor device manufacturing method, substrate processing apparatus and recording medium

A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma generating part including an electrode composed of a first electrode portion connected to a high frequency power supply and a second electrode portion grounded to the earth, which are installed to surround the entire circumference of an outer wall of the reaction tube. An inter-electrode distance between the first electrode portion and the second electrode portion is determined by at least a frequency of the high frequency power supply and a voltage applied across the electrode. ... Hitachi Kokusai Electric Inc

09/14/17 / #20170263441

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying a hydrogen-containing gas to the substrate. Further, the method further includes forming a film on the seed layer by supplying a third processing gas to the substrate.. ... Hitachi Kokusai Electric Inc

09/14/17 / #20170263439

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.. ... Hitachi Kokusai Electric Inc

09/14/17 / #20170260626

Cleaning method and method of manufacturing semiconductor device

A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.. ... Hitachi Kokusai Electric Inc

09/07/17 / #20170253968

Substrate processing apparatus

Described herein is a technique that can improve a quality of substrate processing. A substrate processing apparatus may include: a plurality of processing chambers; a vacuum transfer chamber; a plurality of transfer chambers; a plurality of gate valves; a plurality of first gas supply units configured to supply an inert gas to a substrate; a transfer robot; and a control unit configured to control the plurality of first gas supply units and the transfer robot to: supply the inert gas to the substrate at a first flow rate when a distance between a gas supply port and the substrate passing through the plurality of gate valves is a first distance; and supply the inert gas to the substrate at a second flow rate greater than the first flow rate when the distance between the gas supply port and the substrate is a second distance greater than the first distance when the substrate passes through the plurality of gate valves.. ... Hitachi Kokusai Electric Inc

08/24/17 / #20170243764

Substrate processing apparatus

A substrate processing apparatus, including: a process chamber configured to process substrates; a substrate mounting stand installed in the process chamber and configured to support the substrates along a circumferential direction; a rotating unit configured to rotate the substrate mounting stand; a first gas supply unit configured to supply a first gas from above the substrate mounting stand; a second gas supply unit configured to supply a second gas from above the substrate mounting stand; a third gas supply unit configured to supply a cleaning gas from above the substrate mounting stand; and an elevating unit configured to maintain the substrate mounting stand at a substrate processing position while supplying the first gas and the second gas and also configured to maintain the substrate mounting stand at a cleaning position while supplying the cleaning gas.. . ... Hitachi Kokusai Electric Inc

08/17/17 / #20170232457

Substrate processing apparatus and precursor gas nozzle

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.. ... Hitachi Kokusai Electric Inc

08/03/17 / #20170222972

Ip communication system, ip address setting unit, and ip address setting method

An ip communication system has a switching hub having at least first to (n+1)-th ports (where n is an integer equal to or greater than two); first to n-th ip devices connected to the respective first to n-th ports; and an ip address setting unit connected to the (n+1)-th port. The ip address setting unit transmits, to the switching hub, a first port open instruction to open the first port and to close the second to n-th ports, and thereafter transmits, to the switching hub, a first ip address to be set to the first ip device. ... Hitachi Kokusai Electric Inc

08/03/17 / #20170221738

Substrate processing apparatus

A substrate processing apparatus includes a first reaction chamber including: a first heating unit, a first processing space, and a first transfer space disposed under the first processing space, a second reaction chamber including: a second heating unit, a second processing space, and a second transfer space disposed under the second processing space; a first sidewall and a second sidewall defining the first reaction chamber and the second reaction chamber, wherein the first sidewall is shared by the first reaction chamber and the second reaction chamber, and a cooling channel disposed in the first sidewall and the second sidewall such that a cooling efficiency of the first sidewall is higher than that of the second sidewall, wherein the first reaction chamber and the second reaction chamber are disposed adjacent to each other with the first sidewall therebetween.. . ... Hitachi Kokusai Electric Inc

08/03/17 / #20170221699

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a halogen-based first process gas to the substrate, supplying a non-halogen-based second process gas to the substrate, and supplying a dopant gas to the substrate; and supplying a third process gas to the substrate to form a film on the seed layer.. . ... Hitachi Kokusai Electric Inc

08/03/17 / #20170221698

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A semiconductor device manufacturing method includes forming a film having a desired composition on a substrate by selectively performing at least one of: performing, n1 times, a cycle including processes of sequentially supplying a first precursor gas, a nitriding gas and an oxidizing gas to the substrate; performing, n2 times, a cycle including processes of sequentially supplying the first precursor gas, the oxidizing gas and the nitriding gas to the substrate; performing, n3 times, a cycle including processes of sequentially supplying a second precursor gas containing a chemical bond of a predetermined element and carbon, which is more than that contained in the first precursor gas, the nitriding gas and the oxidizing gas to the substrate; and performing, n4 times, a cycle including processes of sequentially supplying the second precursor gas, the oxidizing gas and the nitriding gas to the substrate.. . ... Hitachi Kokusai Electric Inc

08/03/17 / #20170218513

Substrate processing apparatus

A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber through a second gas supply port. The upper gas supply mechanism includes a first buffer chamber at a back surface of the first gas supply port; a pair of upper ducts at both sides of the first buffer chamber; and a first ventilation unit at lower ends of the pair of upper ducts. ... Hitachi Kokusai Electric Inc

07/27/17 / #20170213727

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing silicon to the substrate, whereby a first silicon film is homo-epitaxially grown on the monocrystalline silicon and a second silicon film differing in crystal structure from the first silicon film is grown on the insulation film.. . ... Hitachi Kokusai Electric Inc

07/13/17 / #20170200599

Method of manufacturing semiconductor device and substrate processing apparatus for forming film including at least two different elements

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or a layer in which at least one of the discontinuous layer or the continuous layer is overlapped; forming a second layer including the first layer and a discontinuous layer including a second element stacked on the first layer; and forming a third layer by supplying a gas containing a third element to the substrate to modify the second layer under a condition where a modifying reaction of the second layer by the gas containing the third element is not saturated.. ... Hitachi Kokusai Electric Inc

07/13/17 / #20170198397

Substrate processing apparatus

A technique for improving stability and safety at the time of boat transfer is provided. A reaction tube configured to process a substrate, a seal cap, provided on an upper surface thereof with a substrate retainer for retaining the substrate, configured to close a furnace opening of the reaction tube, one of a first elevator and a second elevator configured to elevate the seal cap; and another of a first elevator and a second elevator configured to assist the one of the first elevator and the second elevator in elevating the seal cap.. ... Hitachi Kokusai Electric Inc

07/13/17 / #20170198391

Substrate processing apparatus

A technique for performing high-temperature substrate processing includes a plurality of chambers where substrates are processed, wherein the chambers are disposed adjacent to one another; a gas supply unit configured to alternately supply first and second gasses to each of the chambers; a first exhaust pipe installed in each of the chambers and configured to exhaust the first and second gasses; a first heater installed at the first exhaust pipe and configured to heat the first exhaust pipe to a temperature higher than a temperature whereat a source of the first gas is vaporized under vapor pressure; an electronic box installed at each of the chambers, wherein the electronic box is disposed adjacent to a gas box accommodating a portion of the first exhaust pipe; and a thermal reduction structure surrounding the first exhaust pipe and configured to reduce heat from the first heater being conducted to the electronic box.. . ... Hitachi Kokusai Electric Inc

07/06/17 / #20170195789

Loudspeaker device and wireless communication system

The present invention provides monitoring a sounding state of a speaker even in a case where any given sound is broadcast. In detecting the sounding state of the speaker with the microphone for sound detection, noises around the speaker are also collected by the microphone for sound detection. ... Hitachi Kokusai Electric Inc

07/06/17 / #20170195556

Monitoring system and camera device

In a monitoring system, each individual camera device divides image data acquired by an image sensor unit into a plurality of areas, and detects video-image abnormality from an average luminance signal value in each area or from a change thereof. The camera device that has detected video abnormality transmits video-image abnormality detection information to a server. ... Hitachi Kokusai Electric Inc

07/06/17 / #20170195144

Reception apparatus

When a channel between a transmission apparatus and a reception apparatus is distorted by multipath fading or other reasons, linear interpolation between pilot subcarriers produces a large estimation error, resulting in an increase in an equalization error and a decrease in reception performance. The present invention allows feedback of a signal that undergoes error correction, reduction in the channel estimation error through repeated channel estimation, and improvement in the reception performance.. ... Hitachi Kokusai Electric Inc

07/06/17 / #20170194135

Method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device includes providing a substrate processing apparatus including a substrate processing chamber having a plasma generation space and a substrate processing space, a coil provided on the plasma generation space and having an electrical length equal to an integer multiple of a wavelength of high frequency power, and a mounting table, mounting the substrate having a trench to the mounting table, the trench configured so that surfaces of silicon-containing films differing in type are exposed, while at least one of the silicon-containing films including surfaces differing in crystal orientation, supplying a process gas into the chamber, starting generation of plasma of the process gas by applying high frequency power to the coil, and modifying the surfaces by the plasma.. . ... Hitachi Kokusai Electric Inc

07/06/17 / #20170193243

Processing apparatus, controller and processing system

Described herein is a technique that may prevent unauthorized personnel from editing files without permission. A processing apparatus may include: an operating unit configured to display an operation screen for editing an integrated file containing: non-encrypted data corresponding to an item file; a drawing file; and encrypted data obtained by encrypting the item file; a memory unit configured to store the integrated file; and an arithmetic unit configured to: (a) compare the item file with data obtained by decrypting the encrypted data; and (b) combine and display the item file and the drawing file on the operation screen according to a result of comparison performed in (a).. ... Hitachi Kokusai Electric Inc

07/06/17 / #20170192229

Solid-state imaging device and imaging method

An imaging device is implemented that corrects contour distortion of the telephoto and wide-angle ends of zoom lens and a reflex lens where the way the contour is distorted significantly differs between the centerward and receding directions. A uhdtv imaging device with a landscape aspect ratio such as 16:9 uses a high-power zoom lens or a reflex lens, obtains type information and aperture ratio information of the lens, obtains and stores coma aberration information of the lens, and individually and independently calculates the amounts of left and right horizontal contour correction in proportion to a distance from the center of a screen (h−h/2), based on the obtained type information and aperture ratio information of the lens and the stored coma aberration information, and individually and independently performs left and right horizontal contour correction, using one of multi-stage horizontal contour correction, multi-stage vertical contour correction, and multi-stage oblique contour correction.. ... Hitachi Kokusai Electric Inc

06/29/17 / #20170187434

Wireless transmission system and reception device

An object of the present invention is to generate a soft estimation value where missing of bit information is avoided and to implement turbo equalization processing in a wireless transmission apparatus and a wireless transmission system where termination processing is not performed in an error correction coding part and interleave processing over frames is performed. A wireless transmission system of the present invention includes a transmission apparatus and a reception apparatus. ... Hitachi Kokusai Electric Inc

06/29/17 / #20170186634

Substrate processing apparatus

A substrate processing apparatus, including: a process chamber configured to process a substrate, a transfer chamber adjoining the process chamber, a shaft installed in the transfer chamber, a substrate mounting stand connected to the shaft and including a heating part, a first thermal insulation part installed in a wall of the transfer chamber at a side of the process chamber, and a second thermal insulation part installed in the shaft at a side of the substrate mounting stand.. . ... Hitachi Kokusai Electric Inc

06/29/17 / #20170186604

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process gas to the substrate. A pressure of a space where the substrate exists in the act of supplying the first process gas is set higher than a pressure of the space where the substrate exists in the act of supplying the second process gas.. ... Hitachi Kokusai Electric Inc

06/29/17 / #20170183775

Substrate processing apparatus

The present disclosure provides a substrate processing apparatus capable of preventing a heating process from having adverse effects on an operation of supplying gas, even though a shower head is used to supply gas onto a substrate. The substrate processing apparatus includes: a process module having a process chamber where a substrate is processed; a substrate loading/unloading port; a cooling mechanism; a substrate support; a heating unit; a shower head including a dispersion plate made of a material having a first thermal expansion rate; a dispersion plate supporting unit made of a material having a second thermal expansion rate different from the first thermal expansion rate; a first position regulating part configured to regulate positions of the dispersion plate and the dispersion plate supporting unit; and a second position regulating part configured to regulate the positions of the dispersion plate and the dispersion plate supporting unit.. ... Hitachi Kokusai Electric Inc

06/29/17 / #20170183770

Substrate processing apparatus

There is provided a substrate processing apparatus including a first exhaust system which is connected to a first pump and a second pump of a type different from the first pump and is configured to exhaust the interior of a process chamber, a second exhaust system which is connected to the second pump and is configured to exhaust the interior of the process chamber and a control part configured to control the first exhaust system and the second exhaust system such that, when the processing gas is exhausted from the interior of the process chamber, the interior of the process chamber is first exhausted by the second exhaust system, and then an exhaust path is switched from the second exhaust system to the first exhaust system after an internal pressure of the process chamber reaches a predetermined pressure, to exhaust the process chamber by the first exhaust system.. . ... Hitachi Kokusai Electric Inc

06/22/17 / #20170178902

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate and supplying a gas containing carbon and nitrogen to the substrate, or performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas containing carbon to the substrate and supplying a nitrogen-containing gas to the substrate, the oxide film being used as an oxygen source to form a nitride layer containing oxygen and carbon as a seed layer; and forming a nitride film containing no oxygen and carbon as a first film on the seed layer.. . ... Hitachi Kokusai Electric Inc

06/22/17 / #20170178889

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.. . ... Hitachi Kokusai Electric Inc

06/15/17 / #20170171480

Image processing method

There is disclosed an image processing method in which a video signal is inputted from an imaging optical system in which astigmatism remains, and is displayed on a two-dimensional display apparatus. Based on the circumferential direction modulation factor and radial direction modulation factor of a lens used in the imaging optical system, a signal including the amount of vertical or horizontal modulation factor correction proportional to an nth power (n is an integer greater than 1) of a distance from a center position of a screen of the two-dimensional display apparatus is outputted for at least one vertical or horizontal frequency of the two-dimensional display apparatus.. ... Hitachi Kokusai Electric Inc

06/15/17 / #20170170004

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.. ... Hitachi Kokusai Electric Inc

06/08/17 / #20170163379

Wireless communication device and method

Siso decoding of a reception signal having a scrambled symbol arrangement is realized using a process having reduced complexity. Coordinates are generated for a reference point obtained by scrambling and mapping a symbol number not a symbol reference point position. ... Hitachi Kokusai Electric Inc

06/08/17 / #20170162386

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming a base film containing a first element and carbon on a substrate by supplying a film forming gas to the substrate; and oxidizing the base film by supplying an oxidizing gas to the substrate to modify the base film into a c-free oxide film containing the first element.. . ... Hitachi Kokusai Electric Inc

06/08/17 / #20170160201

Examination device and examination method

An examination device implements examination of matter to a large object without moving the device as a whole. The intensity of raman scattering light obtained by laser irradiation of the object to be examined is detected to detect an attached state of an attached matter on the object to be examined. ... Hitachi Kokusai Electric Inc

06/08/17 / #20170159181

Substrate processing apparatus

A substrate processing apparatus includes a substrate support part provided with a first heating part, configured to heat a substrate, a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate, a first exhaust port configured to exhaust an atmosphere of a process space existing above the substrate support part, a gas distribution part installed to face the substrate support part, a lid part provided with a second exhaust port configured to exhaust a buffer space existing between the gas supply part, and the gas distribution part, a rectifying part installed within the buffer space and provided with a second heating part at least partially facing the second exhaust port, the rectifying part configured to rectify the process gas, and a control part configured to control the second heating part.. . ... Hitachi Kokusai Electric Inc

05/18/17 / #20170140963

Substrate processing apparatus

A substrate processing apparatus includes a substrate retaining mechanism; a detecting unit detecting a placed state of the substrate retained by the substrate retaining mechanism; a first determination unit comparing detection data of the substrate obtained by the detecting unit with master data that is a reference to determine if the detection data is within a first allowed value; a confirmation unit confirming substrate type; a second determination unit comparing the detection data of the substrate with the master data to determine if the detection data is within a second allowed value; and a transfer control unit controlling the substrate retaining mechanism depending on a determination result of the second determination unit when substrate type is confirmed as a predetermined type by the confirmation unit when it is determined that the detection data is not within the first allowed value as determined by the first determination unit.. . ... Hitachi Kokusai Electric Inc

04/27/17 / #20170117133

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer by supplying a precursor gas including a chemical bond of a first element and carbon and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas through an exhaust system; forming a second layer by supplying a reaction gas including a second element and a second catalyst gas to the substrate to modify the first layer; and exhausting the reaction gas and the second catalyst gas through the exhaust system. ... Hitachi Kokusai Electric Inc

04/27/17 / #20170114457

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

In the present invention, the productivity of a processing apparatus including a plurality of process chambers is improved. There is provided a substrate processing apparatus including a plurality of process chambers, a process gas supply unit configured to supply a process gas into each of the plurality of process chambers, a purge gas supply unit configured to supply a purge gas into each of the plurality of process chambers, an exhaust unit configured to exhaust each of the plurality of process chambers and a control unit configured to control the process gas supply unit, the purge gas supply unit and the exhaust unit to supply the process gas into a first process chamber of the plurality of process chambers to which a substrate is transferred while supplying the purge gas into process chambers other than the first process chamber and exhausting the plurality of process chambers.. ... Hitachi Kokusai Electric Inc

04/20/17 / #20170109852

Personal safety verification system and similarity search method for data encrypted for confidentiality

Disclosed is a system whereby it is possible to verify the safety of a person even if the person is not aware that the person is being searched for as a missing person. In this system, each verification requesting person who is searching for another person registers, in a database of a portal server (4), a set comprising a feature value of the face of the searched-for person and personal information (e.g., telephone number) about the searched-for person or the verification requesting person. ... Hitachi Kokusai Electric Inc








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