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Ideal Power Inc patents


Recent patent applications related to Ideal Power Inc. Ideal Power Inc is listed as an Agent/Assignee. Note: Ideal Power Inc may have other listings under different names/spellings. We're not affiliated with Ideal Power Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Ideal Power Inc-related inventors


Systems and methods for bidirectional device fabrication

Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. ... Ideal Power Inc

Operation of double-base bipolar transistors with additional timing phases at switching transitions

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. ... Ideal Power Inc

Ruggedized symmetrically bidirectional bipolar power transistor

The present application teaches, among other innovations, power semiconductor devices in which breakdown initiation regions, on both sides of a die, are located inside the emitter/collector regions, but laterally spaced away from insulated trenches which surround the emitter/collector regions. Preferably this is part of a symmetrically-bidirectional power device of the “b-tran” type. ... Ideal Power Inc

Ground fault detection architectures, systems, circuits, and methods

A new approach to ground fault detection and interruption. The entire dc port is driven with a small-amplitude oscillation or modulation, and the power converter's controller tests for the presence of some version of that signal. ... Ideal Power Inc

B-tran geometry and structure that provides both high gain and high current density

Three optimizations are provided for b-tran devices which include field plate trenches: 1) the trench dielectric thickness is large enough to withstand the base-to-emitter voltage, but thin enough to provide good electrical coupling between the poly field plate and the adjacent p-type silicon; 2) the base contact width is small enough to provide an acceptably low reverse base contact region pinch-off voltage, but large enough to avoid degradation of both base resistance; and 3) the emitter width is small enough to keep an acceptably high current density at the emitter's center.. . ... Ideal Power Inc

Microgrid power architecture

Power converters, and microgrids driven by such a power converter, in which the converter is controlled by a proportional controller which operates directly on ac waveforms, preferably without conversion to a dc type signal; preferably with use of voltage compensation to remove inherent error of proportional controller; and preferably with use of individual phase rms voltages in the voltage compensation, to allow for normal operation under any load condition. Undervoltage of one or two phases is automatically compensated by adjusting the voltage of all phases, to retain balance. ... Ideal Power Inc

Double-base-connected bipolar transistors with passive components preventing accidental turn-on

The present application discloses new approaches to providing “passive-off” protection for a b-tran-like device. Even if the control circuitry is inactive, ac coupling uses transient voltage on the external terminals to prevent forward biasing an emitter junction. ... Ideal Power Inc

Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors

The present application teaches, among other innovations, methods and circuits for operating a b-tran (double-base bidirectional bipolar junction transistor). A base drive circuit is described which provides high-impedance drive to the base contact region on whichever side of the device is operating as the collector (at a given moment). ... Ideal Power Inc

Operation of double-base bipolar transistors with additional timing phases at switching transitions

Methods and systems for operating a double-base bidirectional power bipolar transistor. Two timing phases are used to transition into turn-off: one where each base is shorted to its nearest emitter/collector region, and a second one where negative drive is applied to the emitter-side base to reduce the minority carrier population in the bulk substrate. ... Ideal Power Inc

Bidirectional two-base bipolar junction transistor operations, circuits, and systems with double base short at initial turn-off

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (btrans) for switching. Four-terminal three-layer btrans provide substantially identical operation in either direction with forward voltages of less than a diode drop. ... Ideal Power Inc

Bidirectional semiconductor switch with passive turnoff

A symmetrically-bidirectional bipolar transistor circuit where the two base contact regions are clamped, through a low-voltage diode and a resistive element, to avoid bringing either emitter junction to forward bias. This avoids bipolar gain in the off state, and thereby avoids reduction of the withstand voltage due to bipolar gain.. ... Ideal Power Inc








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