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Imec Vzw patents


Recent patent applications related to Imec Vzw. Imec Vzw is listed as an Agent/Assignee. Note: Imec Vzw may have other listings under different names/spellings. We're not affiliated with Imec Vzw, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Imec Vzw-related inventors


Device, a system and a method in holographic imaging

A device in holographic imaging comprises: at least two light sources, wherein each of the at least two light sources is arranged to output light of a unique wavelength; and at least one holographic optical element, wherein the at least two light sources and the at least one holographic optical element are arranged in relation to each other such that light from the at least two light sources incident on the at least one holographic optical element interacts with the at least one holographic optical element to form wavefronts of similar shape for light from the different light sources.. . ... Imec Vzw

Bragg grating, and spectroscopy device including the bragg grating

Provided are a bragg grating and a spectroscopy device including the same. The bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.. ... Imec Vzw

Sigma-delta modulated rf over fiber and filtering

A communication system is provided for transmitting a rf signal, which has a frequency band. The communication system comprises: a sigma delta modulator for modulating the rf signal into a broadband signal wherein the signal to noise ratio of the broadband signal is higher in the frequency band of the rf signal than outside the frequency band of the rf signal; an optical transmitter connected with the sigma delta modulator and with an optical fiber for transmitting the broadband signal over the optical fiber; a photo-detector configured for receiving the broadband signal from the optical fiber and converting it into an electrical signal; an output device and a matching circuit configured for power matching and/or noise matching of the photo-detector, at the frequency band of the rf signal, with the output device.. ... Imec Vzw

Internal spacers for nanowire semiconductor devices

A method of forming an internal spacer between nanowires, the method involving: providing a fin comprising a stack of layers of sacrificial material alternated with nanowire material, and selectively removing part of the sacrificial material, thereby forming a recess. The method also involves depositing dielectric material into the recess resulting in dielectric material within the recess and excess dielectric material outside the recess, where a crevice remains in the dielectric material in each recess, and removing the excess dielectric material using a first etchant. ... Imec Vzw

Method for blocking a trench portion

. . An example embodiment may include a method for blocking one or more portions of one or more trenches during manufacture of a semiconductor structure. The method may include (i) providing a substrate comprising one or more trenches, and a dielectric material under the one or more trenches, (ii) providing a first overlayer on the substrate, thereby filling the one or more trenches, the first overlayer having a planar top surface, a top portion of the first overlayer, comprising the top surface, being etchable selectively with respect to a condensed photo-condensable metal oxide, (iii) covering a first area of the top surface, situated directly above the one or more portions and corresponding thereto, with a block pattern of the condensed photo-condensable metal oxide, thereby leaving a second area of the top surface, having at least another portion of at least one of the trenches thereunder, uncovered.. ... Imec Vzw

Method and apparatus for transmission electron microscopy

The disclosure is related to a method and apparatus for transmission electron microscopy wherein a tem specimen is subjected to at least one thinning step by scratching at least an area of the specimen with an spm probe, and wherein the thinned area is subjected to an spm acquisition step, using the same spm probe or another probe.. . ... Imec Vzw

On-chip broadband light source

An on-chip broadband radiation source, and methods for its manufacture such that a photonics ic comprises an optical waveguide such as a semiconductor waveguide, a thin iii-v material membrane with absorption capability for absorbing an optical pump signal induced in the waveguide. The iii-v membrane comprises a led implemented therein. ... Imec Vzw

Semiconductor structures and method of forming same

The disclosed technology generally relates to semiconductor structures and methods of forming the semiconductor structures, and more particularly to semiconductor structures related to a gate-all-around field effect transistor and a fin field effect transistor. In one aspect, a method of forming field effect transistors includes forming in a first region of a substrate a first semiconductor feature and forming in a second region of the substrate a second semiconductor feature. ... Imec Vzw

Three-dimensional non-volatile semiconductor memory device having replacement gate

The disclosed technology relates generally to semiconductor devices and more particularly to three dimensional semiconductor memory devices, such as vertical three dimensional non-volatile memory devices. In one aspect, a method of fabricating a memory device comprises providing, on a substrate, an alternating stack of control gate layers and dielectric layers. ... Imec Vzw

Spectrometer and apparatus for measuring biological component using the same

A spectrometer is provided. The spectrometer may include an image sensor including a pixel array; and a photonics layer disposed on the pixel array and including a plurality of resonators and a plurality of couplers evanescently coupled to the plurality of resonators.. ... Imec Vzw

Antimicrobial substrate surface

Embodiments described herein include an antimicrobial substrate surface. An example embodiment includes a structure that includes an antimicrobial surface on a substrate. ... Imec Vzw

Iii-n based substrate for power electronic devices and method for manufacturing same

The present disclosure relates to a iii-n based substrate for power electronic devices, comprising a base substrate, a iii-n laminate above the base substrate and a buffer layer structure between the base substrate and the iii-n laminate. The buffer layer structure comprises at least a first superlattice laminate and a second superlattice laminate above the first superlattice laminate. ... Imec Vzw

Method for selective epitaxial growth of a group iii-nitride layer

An example embodiment includes method for forming a layer of a group iii-nitride material. The method includes providing a substrate having a main surface comprising a layer of a first group iii-nitride material. ... Imec Vzw

Image sensor, an imaging device, an imaging system and a method for spectral imaging

The present invention relates to an image sensor for spectral imaging, said image sensor comprising: an array of light-detecting elements; and at least one filter arrangement being arranged on the array for defining a plurality of separate sensor blocks comprising at least: a first mosaic block associated with a first mosaic filter and comprising a first plurality of rows of the array to acquire a first sub-image in two spatial dimensions, wherein image points in the first sub-image has a spectral resolution defined by unique wavelength bands detected in sub-groups of the light-detecting elements; and a second block comprising a second plurality of rows of the array to acquire a second sub-image in two spatial dimensions wherein each image point in the second sub-image corresponds to a single light-detecting element.. . ... Imec Vzw

07/12/18 / #20180195904

Dedicated transformation spectroscopy

The invention relates to a multi-channel spectrometer device (10) for detecting/quantifying a predetermined analyte (5) in a medium (6). The device (10) comprises an input (11) for receiving radiation (7), a first plurality of optical modulators (12) adapted for transforming the radiation (7) in accordance with a first transfer function, and a second plurality of optical modulators (13) adapted for transforming the radiation (7) in accordance with a second transfer function. ... Imec Vzw

07/05/18 / #20180190902

Magnetic tunnel junction device

The disclosed technology generally relates to magnetic devices, and more particularly to magnetic tunnel junction (mtj) devices, and methods of forming the mtj devices. In one aspect, a method of forming a magnetic tunnel junction (mtj) device comprises providing a stack of layers comprising, in a top-down direction, a first magnetic layer having a fixed magnetization direction, a barrier layer, and a second magnetic layer having a switchable magnetization direction with respect to the fixed magnetization direction of the first magnetic layer. ... Imec Vzw

07/05/18 / #20180190419

Magnetoresistive device comprising chromium

The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (mtj) structure over a substrate. ... Imec Vzw

07/05/18 / #20180188176

Quantification of topologically arranged luminescent dyes

A sensor device for quantifying luminescent targets configured in an at least one dimensional pattern. The sensor device comprises a detector for obtaining an at least one dimensional pattern of measured signals, wherein the detector is adapted for detecting the luminescence of the luminescent targets, resulting in a measured pattern. ... Imec Vzw

07/05/18 / #20180188156

Modulation of luminescent dyes

A sensor device for quantifying luminescent targets comprises a light source, a detector, a modulator, and a processor. The light source is adapted for exciting the luminescent target. ... Imec Vzw

07/05/18 / #20180188152

Radiation carrier and use thereof in an optical sensor

A radiation carrier for carrying at least a radiation beam has, on a surface thereof, at least one excitation grating, for directing at least an excitation radiation beam directionally out of the radiation carrier, thereby illuminating a region of interest; and at least one structure for redirecting emission radiation emanating from the region of interest. Further a sensor is provided comprising at least one such radiation carrier and at least one detector, the structure being adapted for redirecting radiation from the region of interest into the at least one detector.. ... Imec Vzw

06/28/18 / #20180182868

Method for forming horizontal nanowires and devices manufactured thereof

A method for forming horizontal nanowires, the method comprising providing a substrate comprising a dielectric layer and a fin structure comprising a portion protruding from the dielectric layer, the protruding portion being partially un-masked and comprising a multi-layer stack consisting of a layer of a first material stacked alternately and repeatedly with a layer of a second material and forming horizontal nanowires done by performing a cycle comprising removing selectively the first material up to the moment that a horizontal nanowire of the second material becomes suspended over a remaining portion of the partially un-masked protruding portion, forming a sacrificial layer on the remaining portion, while leaving the suspended horizontal nanowire uncovered, providing, selectively, a cladding layer on the suspended horizontal nanowire, and thereafter removing the sacrificial layer. The horizontal nanowires become suspended starting from the top and the cladding layer is removed, after the bottom horizontal nanowire becomes suspended.. ... Imec Vzw

06/28/18 / #20180182851

V-grooved vertical channel-type 3d semiconductor memory device and method for manufacturing the same

A method of fabricating a vertical channel 3d semiconductor memory device is disclosed. In one aspect, the method comprises providing a stack of alternating layers of conductive material and dielectric material on a major surface of substrate, providing in the stack at least one trench, having sloped sidewalls sloping towards the major surface, extending at least below the lowest layer of conductive material, forming, in order, a programmable material, a channel liner, and a filler material on the sidewalls of the trench. ... Imec Vzw

06/28/18 / #20180182849

Two dimensional field effect transistors

The disclosed technology relates generally to semiconductor devices, and more particularly to field-effect transistors (fets) comprising nanostructures, such as nanowires, fins, and two dimensional materials. In an aspect, a fet device comprises a substrate having an insulating surface and a vertical structure extending in a direction substantially perpendicular to the insulating surface, where the vertical structure has at least outer surfaces formed of an insulating material. ... Imec Vzw

06/28/18 / #20180182798

Imaging sensor

An imaging sensor comprises: an array of light-detecting elements, wherein each light-detecting element in the array of light-detecting elements is arranged in the imaging sensor so as to detect a respective wavelength interval, wherein the respective wavelength interval differs for different light-detecting elements; a pattern arranged on the array of light-detecting elements, wherein the pattern defines a plurality of transparent areas, each transparent area being associated with a corresponding light-detecting element in the array of light-detecting elements, wherein a size of a transparent area among the plurality of transparent areas is dependent of the corresponding light-detecting element with which the transparent area is associated.. . ... Imec Vzw

06/28/18 / #20180181062

Apparatus and method for in-line holographic imaging

An apparatus for in-line holographic imaging is disclosed. In one aspect, the apparatus includes at least a first light source and a second light source arranged for illuminating an object arranged in the apparatus with a light beam. ... Imec Vzw

06/28/18 / #20180180816

Optical interconnect with high alignment tolerance

An example embodiment may include an optical system for obtaining radiation coupling between two waveguides positioned in a non-coplanar configuration. The optical system may include a first waveguide positioned in a first plane and a second waveguide positioned in a second plane. ... Imec Vzw

06/21/18 / #20180174927

Contacts in semiconductor devices

An example embodiment relates to a method for making a contact to a source or drain region of a semiconductor device. The method may include providing the semiconductor device having at least one source or drain region, the source or drain region having an exposed area. ... Imec Vzw

06/21/18 / #20180172588

Bleaching of dyes in luminescent detection

Sensor devices for quantifying luminescent targets are described herein. An example device comprises a light source for exciting the targets, thus generating luminescence signals and a detector for detecting these signals, resulting in a detected signal which comprises a desired signal originating from the targets and a background signal. ... Imec Vzw

06/21/18 / #20180172587

Time, space digitally resolved quantification of luminescent targets

A sensor device for quantifying luminescent targets. The device comprises a light source for exciting the targets, thus generating luminescence signals, and a detector for detecting these signals of the targets in a cell, resulting in a detected signal comprising a desired signal and a background signal. ... Imec Vzw

06/21/18 / #20180169653

Micro analysis chip and fabrication method thereof

A micro analysis chip comprises an inlet and a fluid flow path communicating thereto. The fluid flow path comprises a first flow path, a second flow path, and a third flow path arranged continuously along a longitudinal direction of the fluid flow path. ... Imec Vzw

06/21/18 / #20180169652

Device for surface functionalization and detection

A fluidic device is described for locally coating an inner surface of a fluidic channel. The fluidic device comprises a first, a second and a third fluidic channel intersecting at a common junction. ... Imec Vzw

06/14/18 / #20180166558

Internal spacer formation for nanowire semiconductor devices

The present disclosure relates to a method of forming an internal spacer between nanowires in a semiconductor device. The method includes providing a semiconductor structure comprising at least one fin. ... Imec Vzw

06/14/18 / #20180166535

Horizontal nanowire semiconductor devices

The present disclosure relates to a method of forming a semiconductor device comprising horizontal nanowires. The method comprises depositing a multilayer stack on a substrate, the multilayer stack comprising first sacrificial layers alternated with layers of nanowire material; forming at least one fin in the multilayer stack; applying an additional sacrificial layer around the fin such that a resulting sacrificial layer is formed all around the nanowire material; and forming a nanowire spacer, starting from the resulting sacrificial layer, around the nanowire material at an extremity of the nanowire material. ... Imec Vzw

06/14/18 / #20180166534

Method of forming internal spacer for nanowires

A method of forming a semiconductor device comprising horizontal nanowires is described. An example method involves providing a semiconductor structure comprising at least one fin, where the fin includes an alternating stack of layers of sacrificial material and nanowire material, and where the semiconductor structure includes a dummy gate partly covering the stack of layers. ... Imec Vzw

06/14/18 / #20180164214

Detection of fluid absorption spectrum

The present disclosure relates to a device for measuring an optical absorption property of a fluid as function of wavelength. The device comprises a broadband light source for emitting light, a plurality of integrated optical waveguides for guiding this light, and a light coupler for coupling the emitted light into the integrated optical waveguides such that the light coupled into each integrated optical waveguide has substantially the same spectral distribution. ... Imec Vzw

06/07/18 / #20180159549

Input circuit for a dynamic comparator

The present disclosure relates to an input circuit comprising positive and negative branches, each branch comprising a transistor arranged for receiving an input voltage at its gate terminal and a first fixed voltage at its drain terminal via a first switch characterized in that the source terminal of the transistor in each of the positive branch and the negative branch is connectable via a second switch to a first plate of a first capacitor in the positive branch and of a second capacitor in the negative branch, respectively, with a second plate of the first capacitor and of the second capacitor being connected to a second fixed voltage and the input circuit further being arranged for receiving a first reset voltage on the first plate of the first capacitor in the positive branch and a second reset voltage on the first plate of the second capacitor in the negative branch.. . ... Imec Vzw

06/07/18 / #20180156788

Sensor device

A device (1) for sensing an analyte, the device (1) comprises at least a sample inlet (10) for receiving a sample, affinity probes (111) selected to have a preferential binding to the analyte, a transducer (11) sensitive to a characteristic of the analyte and/or a label attached to the analyte, the transducer not being a fet transducer, and a desalting unit (13) for desalting the received sample.. . ... Imec Vzw

06/07/18 / #20180156716

Absorption spectrum detection of a fluid

The present disclosure describes a device for measuring an optical absorption property of a fluid as function of wavelength. The device comprises a broadband light source for emitting light, a plurality of integrated optical waveguides for guiding this light and a light coupler for coupling the emitted light into the integrated optical waveguides such that the light coupled into each integrated optical waveguide has substantially the same spectral distribution. ... Imec Vzw

05/31/18 / #20180149643

Surface immobilization of an analyte-recognizing molecule

A method for immobilizing an analyte-recognizing molecule (1) on a surface (2′) functionalized with chemical groups y1 suitable for reacting with a chemical group x2 of a coupling molecule (7) to form a reaction product comprising a chemical group y2 suitable for reacting with the analyte-recognizing molecule (1), the method comprising the steps of: a) providing the functionalized surface (2′), b) contacting the functionalized surface (2′) with a solution (6) comprising simultaneously: i) the coupling molecule (7), and ii) the analyte-recognizing molecule (1).. . ... Imec Vzw

05/24/18 / #20180145030

Integrated circuit chip with power delivery network on the backside of the chip

An integrated circuit (ic) chip having power and ground rails incorporated in the front end of line (feol) is disclosed. In one aspect, these power and ground rails are at the same level as the active devices and are therefore buried deep in the ic, as seen from the front of the chip. ... Imec Vzw

05/24/18 / #20180144935

Method for formation of a transition metal dichalcogenide (tmdc) material layer

A method for formation of a transition metal dichalcogenide (tmdc) material layer on a substrate arranged in a process chamber of a molecular beam epitaxy tool is provided. The method includes evaporating metal from a solid metal source, forming a chalcogen-including gas-plasma, and introducing the evaporated metal and the chalcogen-including gas-plasma into the process chamber thereby forming a tmdc material layer on the substrate.. ... Imec Vzw

05/24/18 / #20180143079

Holographic wavefront sensing

According to a first aspect, there is provided a method of holographic wavefront sensing, the method including: receiving a light beam, which has a wavefront to be analyzed, on a transparent, flat substrate, which is provided with a lattice of opaque dots, wherein the substrate is arranged above an image sensor; detecting by the image sensor an interference pattern formed by diffracted light, being scattered by the opaque dots, and undiffracted light of the light beam received by the image sensor; processing the detected interference pattern to digitally reconstruct a representation of a displaced lattice of opaque dots, which would form the interference pattern on the image sensor upon receiving the light with a known wavefront; and comparing the representation of the displaced lattice to a known representation of the lattice of opaque dots on the substrate to determine a representation of the wavefront form of the received light beam.. . ... Imec Vzw

05/03/18 / #20180123031

Magnetic random access memory device having magnetic tunnel junction

The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices comprising a magnetic tunnel junction (mtj). In an aspect, a method of forming a magnetoresistive random access memory (mram) includes forming a layer stack above a substrate, where the layer stack includes a ferromagnetic reference layer, a tunnel barrier layer and a ferromagnetic free layer and a spin-orbit-torque (sot)-generating layer. ... Imec Vzw

04/19/18 / #20180108526

Method of forming nanowires

The disclosed technology generally relates semiconductor devices and more particularly to semiconductor devices comprising nanowires. In one aspect, a method of fabricating a semiconductor device includes providing a semiconductor substrate having one or more elongated structures thereon and forming a strained layer of semiconductor material on at least one surface of the elongated structures, and annealing the strained layer to form a semiconductor nanowire.. ... Imec Vzw

04/12/18 / #20180102365

Memory device for a dynamic random access memory

The disclosed technology relates to a memory device for a dynamic random access memory, or dram. In one aspect, the memory device includes a substrate supporting a semiconductor device layer in which a plurality of semiconductor devices are formed. ... Imec Vzw

03/29/18 / #20180090635

Electrically contacting and interconnecting photovoltaic cells

A method and module for electrically contacting a photovoltaic cell and for electrically interconnecting such cell is disclosed. In one aspect, the method includes providing a woven fabric comprising a plurality of electrically conductive wires being provided in a single one of a warp direction and a weft direction. ... Imec Vzw

03/22/18 / #20180082907

Method for manufacturing a si-based high-mobility cmos device with stacked channel layers, and resulting devices

A device and method for manufacturing a si-based high-mobility cmos device is provided. The method includes the steps of: (i) providing a silicon substrate having a first insulation layer on top and a trench into the silicon; (ii) manufacturing a iii-v semiconductor channel layer above the first insulation layer by depositing a first dummy layer of a sacrificial material, covering the first dummy layer with a first oxide layer, and replacing the first dummy layer with iii-v semiconductor material by etching via holes in the first oxide layer followed by selective area growth; (iii) manufacturing a second insulation layer above the iii-v semiconductor channel layer and uncovering the trench; (iv) manufacturing a germanium or silicon-germanium channel layer above the second insulation layer by depositing a second dummy layer of a sacrificial material, covering the second dummy layer with a second oxide layer, and replacing the second dummy layer with germanium or silicon-germanium by etching via holes in the second oxide layer followed by selective area growth.. ... Imec Vzw

03/22/18 / #20180082901

High aspect ratio channel semiconductor device and method of manufacturing same

The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. ... Imec Vzw

03/15/18 / #20180076260

Sequential integration process

A sequential integration process is described. An example process involves forming a wafer stack by bonding a first wafer to a second wafer with a front side of the first wafer facing a front side of the second wafer, the first wafer including a first device region formed on the front side of the first wafer and including a set of semiconductor devices. ... Imec Vzw

03/15/18 / #20180076092

Selective fin cut

The present disclosure relates to methods and structures that involve the use of directed self-assembly to selectively remove at least one fin or fin section from a pattern of parallel fins in a semiconductor structure.. . ... Imec Vzw

03/08/18 / #20180068984

Method for bonding and interconnecting integrated circuit devices

A method for bonding and interconnecting two or more ic devices arranged on substrates such as silicon wafers is disclosed. In one aspect, the wafers are bonded by a direct bonding technique to form a wafer assembly, and the multiple ic devices are provided with metal contact structures. ... Imec Vzw

03/08/18 / #20180068898

Semi-sequential 3d integration

Disclosed herein is a semiconductor structure including: a host substrate and one or more bonding layers on top of the host substrate. The structure further includes an entity on the one or more bonding layers, where the entity includes two transistors on opposite sides of a common layer of channel material, where each transistor includes a gate, where both gates overlap each other, where both transistors share the same source and drain regions, and where each transistor have a channel defined within a same portion of the common layer of channel material overlapped by both transistor gates.. ... Imec Vzw

03/01/18 / #20180061741

Semiconductor die package and method of producing the package

A package including a first die embedded in a reconstructed wafer obtainable by the known fo-wlp or ewlb technologies is disclosed. In one aspect and in addition to the first die, a through substrate via insert is embedded in the wafer, the tsv insert being a separate element, possibly a silicon die with metal filled vias interconnecting contacts on the front and back sides of the insert. ... Imec Vzw

03/01/18 / #20180061712

Method of transferring a semiconductor layer

The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group iv, a group iii-iv or a group ii-vi semiconductor material, to a handling wafer. ... Imec Vzw

03/01/18 / #20180059529

Lithographic mask for euv lithography

The disclosure is related to a lithographic mask for euv lithography, to a method for producing the mask, to a method for printing a pattern with the mask, to a stepper/scanner configured to print a pattern with the mask as well as to a computer-implemented method for calculating a deformation of the pattern. The mask comprises an absorber pattern, which is intentionally deformed in the 2-dimensional plane of the euv mask, with respect to the intended pattern. ... Imec Vzw

02/15/18 / #20180047621

Formation of a transition metal nitride

A use of an amine-containing silane for forming a transition metal nitride is provided. In this use, the amine of the amine-containing silane is the source of at least some, preferably most and most preferably all of the nitrogen present in the transition metal nitride.. ... Imec Vzw

02/15/18 / #20180047560

Method for performing a wet treatment of a substrate

A method for performing a wet treatment of a structure is described in the present disclosure. An example method includes obtaining a structure comprising a first surface, wherein the first surfaces comprises a feature fixed at least at a first end to the first surface from which it protrudes, and wherein a sidewall of the feature faces and is positioned away from a second surface by a gap g, performing a wet treatment of the structure and subsequently, drying the structure, wherein performing the wet treatment comprises rinsing the structure by exposing it to a rinsing liquid comprising water, and exposing the structure, subsequently, to a sequence of liquids.. ... Imec Vzw

02/15/18 / #20180046899

Hardware implementation of a temporal memory system

A hardware implementation of a temporal memory system is disclosed. One aspect includes at least one array of memory cells logically organized in rows and columns, wherein each of the memory cells is adapted for storing a scalar value and adapted for changing the stored scalar value. ... Imec Vzw

02/15/18 / #20180046139

Lens-free imaging

Embodiments described herein relate to lens-free imaging. One example embodiment may include a lens-free imaging device for imaging a moving sample. ... Imec Vzw

02/15/18 / #20180043283

Method of forming micro-pipes on a substrate and a structure formed thereof

A method for producing a structure including, on a main surface of a substrate, at least one elongated cavity having openings at opposing ends. The method includes providing a substrate having a main surface. ... Imec Vzw

01/25/18 / #20180025911

Monolithic integration of semiconductor materials

A method for forming a semiconductor structure by bonding a donor substrate to a carrier substrate is disclosed herein. The donor substrate may include a plurality of semiconductor layers epitaxially grown on top of one another in, and optionally above, a trench of the donor substrate. ... Imec Vzw

01/25/18 / #20180024618

Power control in integrated circuits

An integrated circuit device comprising a power control unit for controlling the power of a power isle is disclosed. The power control unit comprises (i) a power gating switch implemented in the beol portion for switching on/off the power to the power isle, (ii) a state recovery circuit comprising a memory element in the feol portion or beol portion and a transistor configuration in the beol portion, and (iii) a wake-up/sleep circuit in the beol portion adapted for receiving an identifier. ... Imec Vzw

01/18/18 / #20180020170

Method and a device for acquiring an image having two-dimensional spatial resolution and spectral resolution

The present disclosure relates to devices and methods for acquiring an image having two-dimensional spatial resolution and spectral resolution. An example method comprises: acquiring a frame using rows of photo-sensitive areas on a sensor surface detecting incident light from an object imaged by an optical system onto an image plane, wherein rows of photo-sensitive areas are arranged to receive different wavelengths; moving the sensor surface in a direction perpendicular to a longitudinal direction of the rows; repeating the acquiring and moving for acquiring a plurality of frames recording different spectral information for respective positions on the object; and combining information from the plurality of frames to form multiple channels of an image, wherein each channel is formed based on detected light in respective rows and represent a two-dimensional image of the object for a different wavelength.. ... Imec Vzw

01/11/18 / #20180011443

Large area lens-free imaging device

Embodiments described herein relate to a large area lens-free imaging device. One example is a lens-free device for imaging one or more objects. ... Imec Vzw

12/14/17 / #20170358742

Resistive switching memory cell

The disclosed technology generally relates to semiconductor devices and more particularly to memory or storage devices based on resistive switching, and to methods of making and using such devices. In one aspect, a resistive switching memory device includes a first electrode and a second electrode having interposed therebetween a first inner region and a second inner region, where the first and second inner regions contacting each other. ... Imec Vzw

12/07/17 / #20170352766

Method for forming a vertical hetero-stack and a device including a vertical hetero-stack

Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. ... Imec Vzw

12/07/17 / #20170351035

Light coupler

Embodiments described herein relate to a light coupler, a photonic integrated circuit, and a method for manufacturing a light coupler. The light coupler is for optically coupling to an integrated waveguide and for out-coupling a light signal propagating in the integrated waveguide into free space. ... Imec Vzw

12/07/17 / #20170351034

Device and method for performing lens-free imaging

Embodiments described herein relate to an imaging device, a method for imaging an object, and a photonic integrated circuit. The imaging device includes at least one photonic integrated circuit. ... Imec Vzw

11/30/17 / #20170341078

Microbubble generator device, systems and method to fabricate

The present disclosure relates to microbubble generator devices for deflecting objects in a liquid, systems for sorting objects that utilize such devices, and methods for fabricating such devices. At least one embodiment relates to a micro-fluidic device for deflecting objects in a liquid. ... Imec Vzw

11/16/17 / #20170330801

Method of forming gate of semiconductor device and semiconductor device having same

The disclosed technology generally relates to semiconductor devices and more particularly to a gate structure for a semiconductor device, and to methods of forming the same. In an aspect a method for forming a gate structure includes forming a first set of one or more semiconductor features and a second set of one or more semiconductor features. ... Imec Vzw

11/16/17 / #20170326552

Compact fluid analysis device and method to fabricate

The present disclosure relates to a fluid analyzing device that includes a sensing device for analyzing a fluid sample. The sensing device includes a microchip configured for sensing the fluid sample, and a closed micro-fluidic component for propagating the fluid sample to the microchip. ... Imec Vzw

11/16/17 / #20170326551

Fluid analysis device

The present disclosure relates to a fluid analysis device which comprises a sensing device for analyzing a fluid sample, the sensing device comprising a micro-fluidic component for propagating the fluid sample and a microchip configured for sensing the fluid sample in the micro-fluidic component; a sealed fluid compartment containing a further fluid, the compartment being fluid-tight connected to the sensing device and adapted for providing the further fluid to the micro-fluidic component when the sealed fluid compartment is opened; and an inlet for providing the fluid sample to the micro-fluidic component. Further, the present disclosure relates to a method for sensing a fluid sample using the fluid analysis device.. ... Imec Vzw

11/16/17 / #20170326546

Compact glass-based fluid analysis device and method to fabricate

The present disclosure relates to devices and methods for analyzing a fluid sample. An example device comprises a fluidic substrate comprising a micro-fluidic component embedded therein, for propagating a fluid sample; a needle or inlet for providing the fluid sample which is fluidically connected to the micro-fluidic component; a lid attached to the fluidic substrate thereby at least partly covering the fluidic substrate and at least partly closing the micro-fluidic component; wherein the fluidic substrate is a glass fluidic substrate and wherein the lid is a microchip. ... Imec Vzw

11/09/17 / #20170322516

Autofocus system and method in digital holography

At least one embodiment relates to an autofocus method for determining a focal plane for at least one object. The method includes reconstructing a holographic image of the at least one object such as to provide a reconstructed image at a plurality of different focal depths. ... Imec Vzw

10/12/17 / #20170294448

Integrated circuit power distribution network

An integrated circuit (ic) power distribution network is disclosed. In one aspect, the ic includes a stack of layers formed on a substrate. ... Imec Vzw

09/28/17 / #20170278752

Self-aligned gate contact

The disclosed technology generally relates to semiconductor devices, and more specifically to electrical contacts to a transistor device, and a method of making such electrical contacts. In one aspect, a method of forming one or more self-aligned gate contacts in a semiconductor device includes providing a substrate having formed thereon at least one gate stack, where the gate stack includes a gate dielectric and a gate electrode formed over an active region in or on the substrate, and where the substrate further has formed thereon a spacer material coating lateral sides of the at least one gate stack. ... Imec Vzw

09/21/17 / #20170271002

Resistance change memory device configured for state evaluation based on reference cells

The disclosed technology generally relates to memory devices and more particularly to memory devices based on resistance change, and to systems and methods for evaluating states of memory cells of the memory devices. In one aspect, a memory device includes a plurality of memory cells arranged in an array, where each memory cell comprises a memory element configured to be switched between at least two resistance states. ... Imec Vzw

09/14/17 / #20170263700

Iii-nitride based semiconductor device with low vulnerability to dispersion and backgating effects

The present disclosure is related to a iii-nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least one set of a first and second electrode in electrical contact with the 2-dimensional charge carrier gas, wherein the device further comprises a mobile charge layer (mcl) within the buffer layer or near the interface between the buffer layer and the channel layer, when the device is in the on-state. The device further comprises an electrically conductive path between one of the electrodes and the mobile charge layer. ... Imec Vzw

09/07/17 / #20170256451

Self-aligned interconnects

An interconnect structure and a method for forming it is disclosed. In one aspect, the method includes the steps of providing a first entity. ... Imec Vzw

07/20/17 / #20170205578

Polarization independent processing in integrated photonics

A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The pic also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. ... Imec Vzw

07/06/17 / #20170196120

Liquid cooling of electronic devices

A liquid cooling system for cooling an electronic device comprising a chip or a chip package comprising a chip is described. The liquid cooling system comprises an inlet plenum comprising a coolant feeding channel oriented substantially parallel with the plane of a main surface to be cooled of the chip and a plurality of inlet cooling channels fluidically connected to the coolant feeding channel and arranged vertically for impinging a liquid coolant directly on said main surface of the chip. ... Imec Vzw

07/06/17 / #20170195586

User device

A user device including a camera, a spectrometer module, and a processing unit is disclosed. In one aspect, the camera is adapted to acquire at least one image of a scenery which falls within a field of view of the camera. ... Imec Vzw

07/06/17 / #20170194487

High voltage tolerant ldmos

An ldmos device in finfet technology is disclosed. In one aspect, the device includes a first region substantially surrounded by a second region of different polarity. ... Imec Vzw

06/29/17 / #20170184452

Spectrometer module

A spectrometer module comprising a plurality of separate electronic circuit modules is disclosed. Each separate electronic module comprises an integrated sensor circuit including a light sensitive area occupying part of an area of the integrated sensor circuit, the integrated sensor circuit being arranged to detect incident light. ... Imec Vzw

06/22/17 / #20170179976

Circuit and method for converting analog signal to digital value representation

A circuit and a method for converting an analog signal to a digital value representation is disclosed. In one aspect, the circuit includes an incremental sigma-delta analog-to-digital converter (adc). ... Imec Vzw

06/22/17 / #20170179974

Circuit for stabilizing a digital-to-analog converter reference voltage

The disclosure relates to a circuit for stabilizing a digital-to-analog converter reference voltage. One example embodiment is a circuit for stabilizing a voltage on a reference node. ... Imec Vzw

06/22/17 / #20170179937

Delay control circuit

The present disclosure relates to a delay control circuit arranged for adding delay to a signal. The delay control circuit includes a driver circuit arranged to receive a first signal and to output a second signal. ... Imec Vzw

06/22/17 / #20170179891

Small signal amplifier

An amplifier circuit, a voltage sensing apparatus, and an amplification method are disclosed. The amplifier circuit comprises (1) an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and (2) a processing stage comprising a second set of transistors for processing the signal from the input stage and generating an output signal. ... Imec Vzw

06/22/17 / #20170179378

Semiconductor device with integrated magnetic tunnel junction

The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices having an integrated magnetic tunnel junction (mtj), and relates to methods of fabricating the semiconductor devices. In one aspect, a semiconductor device includes a stack including successive layers of: a first metallization layer, a first dielectric layer, a second metallization layer, a second dielectric layer, and a third metallization layer. ... Imec Vzw

06/22/17 / #20170179373

Spin torque majority gate device

The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (stmg), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. ... Imec Vzw

06/22/17 / #20170179283

Multi-gate tunnel field-effect transistor (tfet)

A tunnel field-effect transistor (tfet) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. ... Imec Vzw

06/22/17 / #20170179281

Self-aligned nanostructures for semiconductor devices

A method for forming a semiconductor device is disclosed. The method includes providing a semiconductor substrate. ... Imec Vzw

06/22/17 / #20170179272

Method of fabricating an enhancement mode group iii-nitride hemt device and a group iii-nitride structure fabricated therefrom

The disclosure relates to a method of fabricating an enhancement mode group iii-nitride hemt device and a group iii-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode group iii-nitride hemt device. ... Imec Vzw

06/22/17 / #20170178971

Method for manufacturing a si-based high-mobility cmos device with stacked channel layers, and resulting devices

A device and method for manufacturing a si-based high-mobility cmos device is provided. The method includes the steps of: (i) providing a silicon substrate having a first insulation layer on top and a trench into the silicon; (ii) manufacturing a iii-v semiconductor channel layer above the first insulation layer by depositing a first dummy layer of a sacrificial material, covering the first dummy layer with a first oxide layer, and replacing the first dummy layer with iii-v semiconductor material by etching via holes in the first oxide layer followed by selective area growth; (iii) manufacturing a second insulation layer above the iii-v semiconductor channel layer and uncovering the trench; (iv) manufacturing a germanium or silicon-germanium channel layer above the second insulation layer by depositing a second dummy layer of a sacrificial material, covering the second dummy layer with a second oxide layer, and replacing the second dummy layer with germanium or silicon-germanium by etching via holes in the second oxide layer followed by selective area growth.. ... Imec Vzw

06/22/17 / #20170178910

Method for differential heating of elongate nano-scaled structures

The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in absorption of light occurs in the first and second nanostructure. ... Imec Vzw

06/22/17 / #20170178712

Pinch-off ferroelectric memory

The disclosed technology relates generally to non-volatile memory devices, and more particularly to ferroelectric non-volatile memory devices. In one aspect, a non-volatile memory cell includes a pinch-off ferroelectric memory fet and at least one select device electrically connected in series to the pinch-off ferroelectric memory fet.. ... Imec Vzw

06/22/17 / #20170178698

Memory cell

The present disclosure relates to a memory cell, a memory array, and methods for writing a memory cell. In an example embodiment, a memory cell comprises a first transistor, a second transistor, and a differential sense amplifier. ... Imec Vzw

06/22/17 / #20170172511

System and method for acquisition of biosignals with motion sensor-based artifact compensation

The disclosure relates to systems and methods for acquisition of biosignals with motion sensor-based artifact compensation. One example embodiment is a system for acquisition of biosignals from a subject. ... Imec Vzw

06/15/17 / #20170170390

Magnetic memory device having buffer layer

The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (stt-mram) devices having a magnetic tunnel junction (mtj), and further relates to methods of fabricating the stt-mram devices. In an aspect, a magnetoresistive random access memory (mram) device has a magnetic tunnel junction (mtj). ... Imec Vzw

06/15/17 / #20170170314

Drain extension region for tunnel fet

A tunnel field-effect transistor comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region doped with a dopant element having a first dopant type and a first doping concentration; a drain region doped with a dopant element having a second dopant type opposite compared to the first dopant type, and a second doping concentration, a channel region situated between the source region and the drain region and having an intrinsic doping concentration, or lowly doped concentration being lower than the doping concentration of the source and drain regions, a gate stack comprising a gate electrode on a gate dielectric layer, the gate stack covering at least part of the channel region and extending at the source side up to at least an interface between the source region and the channel region, a drain extension region in the channel region or on top thereof, the drain extension region being formed from a material suitable for creating, and having a length/thickness ratio such that, in use, it creates a charged layer, in the off-state of the tfet, with a charge opposite to the charge of the majority carriers in the drain region.. . ... Imec Vzw

06/15/17 / #20170170313

Method of producing a pre-patterned structure for growing vertical nanostructures

A method of producing a pre-patterned structure comprising at least one cavity for growing a vertical nanostructure is disclosed. The method includes providing at least one protruding structure that extends upwardly from a main surface of a substrate. ... Imec Vzw

06/15/17 / #20170170289

Transistor device with reduced hot carrier injection effect

The disclosed technology generally relates to semiconductor devices, and more particularly to transistor devices such as metal-oxide-semiconductor (mos) transistor devices. In one aspect, a transistor device comprises a channel region in a substrate partially delimited by a source and a drain junction at a main surface of the substrate. ... Imec Vzw

06/15/17 / #20170167992

Method for inspecting a pattern of features on a semiconductor die

The present disclosure is related to a method for detection of defects in a printed pattern of geometrical features on a semiconductor die, the pattern comprising an array of features having a nominal pitch, the method comprising determining deviations from the nominal pitch in the printed pattern, and comparing the printed pattern with another version of the pattern, the other version having the same or similar pitch deviations as the printed pattern. According to various embodiments, the other version of the pattern may a printed pattern on a second die, or it may be a reference pattern, obtained by shifting features of the array in a version having no or minimal pitch deviations, so that the pitch deviations in the reference pattern are the same or similar to the pitch deviations in the printed pattern under inspection.. ... Imec Vzw

06/15/17 / #20170167921

Spectral detector and image sensor including the same

A spectral detector includes a plurality of spectral detection units, each of the spectral detection units including an optical signal processor configured to deliver an optical signal incident to the spectral detection unit to an outside of the spectral detection unit, and a resonator configured to modulate a spectrum of an optical signal incident to the optical signal processor by interacting with the optical signal processor, at least some of the resonators of the plurality of spectral detection units having different lengths from each other, and a number of optical signal processors included in each respective spectral detection unit varying according to a length of the resonator included in the respective spectral detection unit.. . ... Imec Vzw

06/08/17 / #20170162686

Field-effect transistor comprising germanium and manufacturing method thereof

The disclosed technology generally relates to semiconductor devices, and more particularly to transistors comprising germanium (ge) in the channel, and to methods of manufacturing thereof. In one aspect, a field-effect transistor (fet) comprises an active region comprising germanium (ge) and a gate stack formed on the active region. ... Imec Vzw

06/01/17 / #20170153143

Bragg grating, and spectroscopy device including the bragg grating

Provided are a bragg grating and a spectroscopy device including the same. The bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of the waveguide; a plurality of first refractive members protruding from the core member and spaced apart from each other along the lengthwise direction; and a second refractive member filling spaces between the first refractive members and having a refractive index different from a refractive index of the first refractive members.. ... Imec Vzw

05/18/17 / #20170141199

Method for forming a field effect transistor device having an electrical contact

A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. ... Imec Vzw

05/04/17 / #20170121814

Apparatus and method for delivering a gaseous precursor to a reaction chamber

The disclosure relates to an apparatus and method for delivering a precursor to a reaction chamber. One example embodiment is an apparatus for delivering a precursor to a reaction chamber. ... Imec Vzw

04/27/17 / #20170115201

Method and device for drug screening

The present disclosure relates to devices and methods configured to perform drug screening on cells. At least one embodiment relates to a lens-free device for performing drug screening on cells. ... Imec Vzw

04/13/17 / #20170103889

Method for producing a pillar structure in a semiconductor layer

A method for producing a pillar structure in a semiconductor layer, the method including providing a structure including, on a main surface, a semiconductor layer. A patterned hard mask layer stack is provided on the semiconductor layer that includes a first layer in contact with the semiconductor layer and a second layer overlying and in contact with the first layer. ... Imec Vzw

04/13/17 / #20170100064

Device and method for non-invasive measuring of analytes

The present disclosure relates to devices and methods for non-invasive measuring of analytes. At least one embodiment relates to a wearable system for non-invasive measuring of a concentration of an analyte in skin tissue. ... Imec Vzw

03/30/17 / #20170091094

Low-layer memory for a computing platform

The present disclosure relates to low-layer memory for a computing platform. An example embodiment includes a memory hierarchy being directly connectable to a processor. ... Imec Vzw

03/23/17 / #20170082544

Semiconductor device for detecting fluorescent particles

The present disclosure relates to semiconductor devices for detecting fluorescent particles. At least one embodiment relates to an integrated semiconductor device for detecting fluorescent tags. ... Imec Vzw

03/23/17 / #20170082421

Integrated spectrometers with single pixel detector

An integrated waveguide based spectrometer is described. The spectrometer comprises a sensing region for receiving multi-wavelength radiation for irradiating a sample in the sensing region, a wavelength demultiplexing element arranged for capturing said multi-wavelength radiation after interaction with the sample and for providing a number of wavelength demultiplexed radiation outputs or a number of different groups of wavelength demultiplexed radiation outputs, an integrated modulator for differently modulating the different demultiplexed radiation outputs or different groups of demultiplexed radiation outputs, and a multiplexer element for multiplexing the differently modulated demultiplexed radiation outputs or the differently grouped demultiplexed radiation outputs.. ... Imec Vzw

03/16/17 / #20170077869

Reconfigurable photovoltaic module

The present disclosure relates to reconfigurable voltaic modules. One example embodiment includes a photovoltaic module. ... Imec Vzw

03/16/17 / #20170071510

Implantable sensor

A sensor for sensing a substance such as for example glucose. The sensor is implantable in the body of a living creature. ... Imec Vzw

03/09/17 / #20170069770

Texturing monocrystalline silicon substrates

A method for preparing a monocrystalline silicon substrate surface for a subsequent texturing step, the method comprising: removing contaminants from the surface by contacting the surface with a cleaning solution; etching the pre-cleaned surface with an aqueous solution comprising from 12 to 19% by weight, of koh and/or naoh; rinsing the etched surface with an aqueous medium at ph from 7 to 10; and contacting the rinsed etched surface with ozonated deionized water at ph from 2 to 4.5, thereby converting the rinsed etched surface into a prepared surface. A method for texturing the prepared surface is also provided.. ... Imec Vzw

03/09/17 / #20170069486

Directed self-assembly using trench assisted chemoepitaxy

The present disclosure relates to directed self-assembly using trench assisted chemoepitaxy. An example embodiment includes a method of forming a pre-patterned structure for directing a self-assembly of a self-assembling material that includes a first and a second component having different chemical natures. ... Imec Vzw

03/02/17 / #20170062431

Method of forming a junction field effect transistor

The disclosed technology relates to semiconductors, and more particularly to a junction field effect transistor (jfet). In one aspect, a method of fabricating a jfet includes forming a well of a first dopant type in a substrate, wherein the well is isolated from the substrate by an isolation region of a second dopant type. ... Imec Vzw

03/02/17 / #20170062421

Buried interconnect for semiconductor circuits

A semiconductor circuit comprises a front end of line (feol) comprising a plurality of transistors, each of which having a source region, a drain region and a gate region arranged between the source region and the drain region and comprising a gate electrode. The semiconductor circuit also comprises a buried interconnect that is arranged in the feol and electrically connected to the gate region from below through a bottom contact portion of the gate electrode. ... Imec Vzw

03/02/17 / #20170059791

Method for coupling an optical fiber to an optical or optoelectronic component

A method for optically and mechanically coupling an optical fiber to an optical or optoelectronic component on a substrate is provided. The method comprises: providing an optical fiber comprising a core and a cladding, the core being exposed at an end face of the optical fiber; forming a polymer waveguide core on the end face, the polymer waveguide core extending from the fiber core; bringing the polymer waveguide core in proximity of the optical or optoelectronic component; providing a liquid optical material, the liquid optical material embedding the polymer waveguide core; and curing the liquid optical material, thereby forming a polymer cladding layer encapsulating the polymer waveguide core and mechanically attaching the optical fiber to the optical or optoelectronic component.. ... Imec Vzw

02/23/17 / #20170054021

Al-poor barrier for ingaas semiconductor structure

The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a iii-v structure abutting the silicon monocrystalline substrate. The semiconductor structure includes an inagabas structure overlaying the iii-v structure, where a is from 0.40 to 1, b from 0 to 0.60, and a+b equal to 1.00. ... Imec Vzw

02/09/17 / #20170040331

Ferroelectric memory device and fabrication method thereof

The disclosed technology generally relates to semiconductor devices, and more particularly to a non-volatile ferroelectric memory device and to methods of fabricating the same. In one aspect, a non-volatile memory device includes a high dielectric constant layer (high-k) layer or a metal layer on a semiconductor substrate. ... Imec Vzw

02/09/17 / #20170040321

Gate-all-around nanowire device and method for manufacturing such a device

The disclosed technology generally relates to a semiconductor device, and more particularly to a gate all around (gaa) semiconductor device and a method for fabricating the same. In one aspect, a semiconductor device has a vertical stack of nanowires formed on a substrate, wherein the vertical stack of nanowires comprises an n-type nanowire and a p-type nanowire each extending in a longitudinal direction parallel to a main surface of the substrate. ... Imec Vzw

02/02/17 / #20170033183

Strained group iv channels

Disclosed herein is a semiconductor structure including: (i) a monocrystalline substrate having a top surface, (ii) a non-crystalline structure overlying the monocrystalline substrate and including an opening having a width smaller than 10 microns and exposing part of the top surface of the monocrystalline substrate. The semiconductor structure also includes (iii) a buffer structure having a bottom surface abutting the part and a top surface having less than 108 threading dislocations per cm2, the buffer structure being made of a material having a first lattice constant. ... Imec Vzw

02/02/17 / #20170031318

Apparatus and method for performing in-line lens-free digital holography of an object

The present disclosure relates to apparatuses and methods for performing in-line lens-free digital holography of objects. At least one embodiment relates to an apparatus for performing in-line lens-free digital holography of an object. ... Imec Vzw

01/26/17 / #20170025314

Semiconductor devices comprising multiple channels and method of making same

The disclosed technology generally relates to semiconductor devices, and more particularly to transistor devices comprising multiple channels. In one aspect, a method of fabricating a transistor device comprises forming on the substrate a plurality of vertically repeating layer stacks each comprising a first layer, a second layer and a third layer stacked in a predetermined order, wherein each of the first, second and third layers is formed of silicon, silicon germanium or germanium and has a different germanium concentration compared to the other two of the first, second and third layers. ... Imec Vzw

01/12/17 / #20170011956

Method for producing an integrated circuit device with enhanced mechanical properties

Devices and methods for producing an integrated circuit device, comprising a front-end-of-line (feol) portion and a back-end-of-line (beol) portion, are disclosed. The metallization layers comprise dielectric layers, preferably low-k dielectric layers, with metal conductors and/or interconnect structures incorporated within the dielectric layers. ... Imec Vzw

01/05/17 / #20170005654

Switching circuit

A conversion circuit is disclosed. In one aspect, the conversion circuit includes a first input terminal for receiving a digital signal. ... Imec Vzw

01/05/17 / #20170005132

Integrated circuit and method for manufacturing integrated circuit

An integrated circuit for an imaging device including an array of photo-sensitive areas is disclosed. In one aspect the integrated circuit includes a first multi-layer structure and a second multi-layer structure arranged over a first and a second photo-sensitive area, respectively. ... Imec Vzw

01/05/17 / #20170005018

Method and device for inspection of a semiconductor device

A method for inspection of a semiconductor device is disclosed. In one aspect, the method includes performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device. ... Imec Vzw

01/05/17 / #20170005000

Method for bonding and interconnecting integrated circuit devices

A method for bonding and interconnecting two or more ic devices arranged on substrates such as silicon wafers is disclosed. In one aspect, the wafers are bonded by a direct bonding technique to form a wafer assembly, and the multiple ic devices are provided with metal contact structures. ... Imec Vzw

01/05/17 / #20170003454

Adiabatic coupler

A system for selectively adiabatically coupling electromagnetic waves from one waveguide to another waveguide is described. It comprises a first waveguide portion and a second waveguide portion having substantially different surface normal cross-sections. ... Imec Vzw

01/05/17 / #20170003227

Integrated waveguide structure for fluorescence analysis

The present disclosure relates to structures, systems, and methods for characterizing one or more fluorescent particles. At least one embodiment relates to an integrated waveguide structure. ... Imec Vzw








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