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Infineon Technologies Ag patents


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Synchronization mechanism for high speed sensor interface

A sensor may determine a sampling pattern based on a group of synchronization signals received by the sensor. The sampling pattern may identify an expected time for receiving an upcoming synchronization signal. ... Infineon Technologies Ag

Synchronization mechanism for high speed sensor interface

A sensor may determine, based on two or more synchronization signals provided by a control device, an expected time for receiving an upcoming synchronization signal. The sensor may perform a measurement of a sensor signal at a point in time such that sensor data, corresponding to the measurement of the sensor signal at the point in time, is available at a selectable time interval prior to reception of the upcoming synchronization signal.. ... Infineon Technologies Ag

Built-in self-test for adc

Representative implementations of devices and techniques provide a built-in self-test (bist) for an analog-to-digital converter (adc). Stimuli needed to test an adc are generated within the chip containing the adc. ... Infineon Technologies Ag

Semiconductor device with a guard structure and corresponding methods of manufacture

A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. ... Infineon Technologies Ag

Power semiconductor device with charge balance design

A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. ... Infineon Technologies Ag

Wafer carrier, method for manufacturing the same and method for carrying a wafer

A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. ... Infineon Technologies Ag

System and method of gesture detection for a remote device

A method for operating a mobile device includes detecting a gesture by the mobile device. Detecting the gesture includes receiving a reflected millimeter wave signal by the mobile device, generating a first message in accordance with the detected gesture, and transmitting the first message from the mobile device to an external remote device. ... Infineon Technologies Ag

Stray-field robust, twist-insensitive magnetic speed sensors

A magnetic sensor module includes a magnetic sensor having an in-plane axis and an out-of-plane axis, and including a differential pair of sensor elements spaced apart from each other. The differential pair of sensor elements are configured to generate measurement values in response to sensing a bias magnetic field. ... Infineon Technologies Ag

Electronic switch and protection circuit

Disclosed is an electronic circuit and a method. The electronic circuit includes a plurality of electronic switches each including a load path and a control node, wherein the load paths are connected in parallel between a first load node and a second load node of the electronic circuit; a current sense circuit configured to sense a load current between the first load node and the second load node and to generate a current sense signal representing the load current; a drive circuit configured to drive the plurality of electronic switches based on at least one input signal; and an overload detector. ... Infineon Technologies Ag

Semiconductor device and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region, a first metallization on a front side of the semiconductor body, a contact region that forms an ohmic contact with the second silicon carbide region, and a barrier-layer between the first metallization and the contact region and that is in ohmic connection with the first metallization and the contact region. The barrier-layer forms a schottky-junction with the first silicon carbide region, and includes molybdenum nitride or tantalum nitride. ... Infineon Technologies Ag

Method of operating an igbt having switchable and non-switchable diode cells

A method of operating an igbt is described. The igbt has gate, emitter and collector terminals, and igbt cells, switchable diode cells, and non-switchable diode cells integrated in a semiconductor substrate, wherein each of the igbt cells and switchable diode cells includes an operable switchable channel region. ... Infineon Technologies Ag

Semiconductor device with an igbt region and a non-switchable diode region

A semiconductor device includes a semiconductor substrate having a body layer arranged between a front side and a drift layer, and forming a pn-junction with the drift layer. A front metallization is on the front side in ohmic connection with the body layer, and a back metallization opposite is in ohmic connection with the drift layer. ... Infineon Technologies Ag

Semiconductor device including an encapsulation material defining notches

A semiconductor device includes a first contact element, a second contact element, a semiconductor chip, and an encapsulation material. The first contact element is on a first side of the semiconductor device. ... Infineon Technologies Ag

Frame mounting after foil expansion

An apparatus which comprises an expansion unit configured for expanding a foil, and a mounting unit configured for subsequently mounting the expanded foil on a frame and a workpiece, in particular a wafer, on the expanded foil.. . ... Infineon Technologies Ag

07/05/18 / #20180188308

Passive bridge circuit with oxide windows as leakage sink

Leakage current detection systems and detection methods are provided. A leakage current detection system includes a passive bridge circuit including a first branch having a first output and a second branch having a second output, a first output pad electrically connected to the first output, a second output pad electrically connected to the second output, a leakage surge structure disposed between the first output pad and the second output pad, where the leakage surge structure is connected to a low-ohmic node and is configured to draw a leakage current from the passive bridge circuit and pull voltages at the first and the second output pads in a same direction on a condition that the leakage current flows through at least one element of the passive bridge circuit, and a processing device configured to monitor for the leakage current and output a monitored result.. ... Infineon Technologies Ag

07/05/18 / #20180188213

Photoacoustic gas analyzer

A photoacoustic gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit into the gas chamber electromagnetic radiation with a time-varying intensity adapted to selectively excite gas molecules of n mutually different gas types the concentrations of which are to be determined in the gas received in the gas chamber, thereby generating acoustic waves, an acoustic-wave sensor configured to detect acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, and a control unit operatively connected to the radiation source and the acoustic-wave sensor. The control unit may be configured: to control the radiation source to emit electromagnetic radiation with a time-varying intensity and to modulate the frequency at which the intensity is varied with a modulation signal taking on at least n mutually different values, to receive from the acoustic-wave sensor signals indicative of detected acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, to determine at least n mutually different signal amplitudes associated with respective n mutually different frequencies at which the intensity of the emitted electromagnetic radiation is varied, and to determine from the determined signal amplitudes the concentrations of the n mutually different gas types.. ... Infineon Technologies Ag

07/05/18 / #20180188172

Gas analysis apparatus

An analysis apparatus includes a gas chamber for receiving a gas to be analysed, a source to emit radiation into the chamber. The radiation is to selectively excite molecules of the gas. ... Infineon Technologies Ag

07/05/18 / #20180188071

Sensor with interface for functional safety

A sensor interface operates to communicate a sensed quantity along one or more processing pathways and in different data representations. The signal representations can be swapped along one or more locations of the signal processing branches. ... Infineon Technologies Ag

06/28/18 / #20180184538

Method for producing an electronic module assembly and electronic module assembly

One aspect relates to a method for producing an electronic module assembly. According to the method, a curable first mass extending between a substrate assembly and a module housing is cured while a circuit carrier of the substrate assembly has at least a first temperature. ... Infineon Technologies Ag

06/28/18 / #20180184495

Thermal protection for light emitting devices

A device for thermal protection is described. The device may be configured to determine current temperature information for a set of light emitting diodes (leds), receive an indication of a requested light pattern for the set of leds, and determine predicted temperature information for the set of leds based on the current temperature information and the requested light pattern. ... Infineon Technologies Ag

06/28/18 / #20180183421

Voltage comparator arrangement, electronic component, chip card, embedded secure element

In various embodiments, an electronic component is provided. The electronic component may include a supply bus configured to provide a supply voltage for an electronic circuit. ... Infineon Technologies Ag

06/28/18 / #20180183327

Charge pump arrangement and method for operating a charge pump arrangement

A charge pump arrangement and methods for operating a charge pump arrangement are disclosed. According to various embodiments, a charge pump arrangement may include: a charge pump circuit configured to convert an input voltage into an output voltage based on a pump clock signal; a feedback path configured to provide a feedback signal representing the output voltage of the charge pump circuit; and a control circuit configured to receive a clock signal and to control the output voltage of the charge pump circuit by controlling the pump clock signal based on the feedback signal and the clock signal.. ... Infineon Technologies Ag

06/28/18 / #20180182710

Semiconductor arrangement with a sealing structure

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. ... Infineon Technologies Ag

06/28/18 / #20180182651

Common procedure of interconnecting electronic chip with connector body and forming the connector body

A method which comprises applying a common pressing force operative to interconnect an electronic chip with a connector body by an interconnect structure, and to contribute to a forming of the connector body.. . ... Infineon Technologies Ag

06/28/18 / #20180182643

Semiconductor module cooling system

A cooling apparatus includes a discrete module and a plastic housing. The discrete module incudes a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound and a first cooling plate at least partly uncovered by the mold compound. ... Infineon Technologies Ag

06/28/18 / #20180180666

Integrated circuit device testing in an inert gas

A system includes an inert gas supply, a soak chamber, a test chamber, a transfer zone, and a heater. The soak chamber soaks an integrated circuit (ic) device in the inert gas prior to testing. ... Infineon Technologies Ag

06/28/18 / #20180180542

Photonic crystal sensor structure and a method for manufacturing the same

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.. ... Infineon Technologies Ag

06/21/18 / #20180177022

Pulse width modulated binary frequency shift keying

A control system that facilitates energy efficient management of building automation systems is disclosed. The control system comprises a source circuit configured to generate a modulated dc control signal comprising data modulated on a dc source signal having a power associated therewith and a load circuit configured to receive the modulated dc control signal. ... Infineon Technologies Ag

06/21/18 / #20180175947

Radio frequency device and corresponding method

According to an embodiment, a radio frequency device includes a phase locked loop circuit, and an automatic gain control circuit, where an output of an automatic gain control circuit is coupled to a reference signal input of the phase locked loop circuit.. . ... Infineon Technologies Ag

06/21/18 / #20180175909

Radio frequency device and corresponding method

Devices and methods determining phase offsets are disclosed. A first test signal is transmitted from a first rf circuit part to a second rf circuit part, where a phase difference between the first test signal and a reference signal (ref) is measured. ... Infineon Technologies Ag

06/21/18 / #20180175898

Rf transceiver with test capability

An rf front-end circuit of an rf transceiver is described herein. In accordance with one exemplary embodiment, the fronted circuit includes a local oscillator (lo) configured to generate an rf transmit signal, an rf output port coupled to the local oscillator, wherein the rf transmit signal is output at the rf output port, and a monitoring circuit receiving an input signal and configured to determine the phase of the input signal or the power of the input signal or both. ... Infineon Technologies Ag

06/21/18 / #20180175868

Generation of fast frequency ramps

A circuit includes an rf oscillator coupled in a phase-locked loop. The phase-locked loop is configured to receive a digital input signal, which is a sequence of digital words, and to generate a feedback signal for the rf oscillator based on the digital input signal. ... Infineon Technologies Ag

06/21/18 / #20180175855

Switch device and method

Devices and methods related to switches are discussed. An inverse current condition may be detected, and a voltage at a node associated with a switch driver may be driven to a predetermined voltage in case of detection of an inverse current condition.. ... Infineon Technologies Ag

06/21/18 / #20180175811

Compact class-f chip and wire matching topology

An amplifier circuit includes an rf input port, an rf output port, a reference potential port, and an rf amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the rf output port. ... Infineon Technologies Ag

06/21/18 / #20180175153

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. ... Infineon Technologies Ag

06/21/18 / #20180175150

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. ... Infineon Technologies Ag

06/21/18 / #20180174985

Semiconductor chip

According to one embodiment, a semiconductor chip is described including a semiconductor chip body and a semiconductor chip circuit on the body and including a first circuit path coupled to a first and a second node and including at least two gate-insulator-semiconductor structures and a second circuit path coupled to the first and the second node and including at least two gate-insulator-semiconductor structures. The first and the second circuit path are connected to set the first and the second node to complementary logic states. ... Infineon Technologies Ag

06/21/18 / #20180174946

Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers

Power semiconductor packages described herein each include a substrate having two or more metal layers and one or more insulating layers for separating the metal layers. The substrate insulating layers are formed from a polymer material to reduce the cte mismatch between the substrate metal layers and the substrate insulating layers.. ... Infineon Technologies Ag

06/21/18 / #20180174936

Power semiconductor modules with protective coating

A semiconductor package is described which meets a plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. The semiconductor package includes a semiconductor die embedded in or covered by a molded plastic body, the molded plastic body satisfying only a subset of the plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. ... Infineon Technologies Ag

06/21/18 / #20180174935

Semiconductor package and method for fabricating a semiconductor package

A method of fabricating a semiconductor package comprises providing a carrier, fabricating an opening in the carrier, attaching a semiconductor chip to the carrier and fabricating an encapsulation body covering the semiconductor chip.. . ... Infineon Technologies Ag

06/21/18 / #20180174840

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. ... Infineon Technologies Ag

06/21/18 / #20180174640

Memory device and methods for controlling a memory assist function

According to one embodiment, a memory device is described including a memory array including a plurality of memory cells wherein each memory cell is coupled to a control line, a memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line, a signal generator configured to generate a signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device, a signal processing circuit configured to amplify the signal and a controller configured to activate the memory assist circuit based the amplified signal.. . ... Infineon Technologies Ag

06/21/18 / #20180174441

Apparatuses for encoding and decoding wheel speed sensor signals and methods for communicating encoded wheel speed sensor signals

A signal encoder for encoding a wheel speed sensor signal includes an input interface. The input interface is configured to receive a wheel speed sensor signal providing speed information and additional information. ... Infineon Technologies Ag

06/21/18 / #20180172801

Rf receiver with built-in test capabilities

A radar device comprises a test signal generator including a digital harmonic oscillator that generates a digital oscillator signal with a first spectral component; a first digital-to-analog-converter that generates an analog oscillator signal based on the digital oscillator signal. Furthermore, the radar device comprises at least one radar channel receiving the analog oscillator signal during one or more self-tests.. ... Infineon Technologies Ag

06/21/18 / #20180172739

Current sensing

Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.. ... Infineon Technologies Ag

06/21/18 / #20180172724

Acceleration sensor

Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (beol). ... Infineon Technologies Ag

06/21/18 / #20180172484

Sensor controller, sensor signal receiver and sensor system

A sensor controller for a sensor module includes at least one interface configured to obtain sensor information from the sensor module and to transmit a sensor signal to a sensor signal receiver. The sensor controller further includes a control module configured to control the interface. ... Infineon Technologies Ag

06/21/18 / #20180172474

Magnetic angle sensor device and method of operation

A magnetic angle sensing system is suggested comprising a first magnetic sensing device, a second magnetic sensing device, a third magnetic sensing device, a substrate comprising the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device, wherein the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device are each arranged such to be responsive to a magnetic field component that is perpendicular to a main surface of the substrate, wherein each or the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device comprises the same number of magnetic sensing elements, wherein the second magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device clockwise around a reference point, wherein the third magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device counter-clockwise around the reference point.. . ... Infineon Technologies Ag

06/21/18 / #20180170745

Semiconductor device, microphone and method for producing a semiconductor device

A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. ... Infineon Technologies Ag

06/14/18 / #20180167000

Rectifier device

A rectifier device is described herein. In accordance with one example, the rectifier device includes a transistor that has a load current path and a diode connected parallel to the load current path. ... Infineon Technologies Ag

06/14/18 / #20180166999

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166971

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166555

Silicon carbide vertical mosfet with polycrystalline silicon channel layer

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region. ... Infineon Technologies Ag

06/14/18 / #20180166338

Bimos device with a fully self-aligned emitter-silicon and method for manufacturing the same

A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. ... Infineon Technologies Ag

06/14/18 / #20180166324

Buried insulator regions and methods of formation thereof

A method of fabricating a semiconductor device includes forming a buried insulation region within a substrate by processing the substrate using etching and deposition processes. A semiconductor layer is formed over the buried insulation region at a first side of the substrate. ... Infineon Technologies Ag

06/14/18 / #20180164387

Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits

A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. ... Infineon Technologies Ag

06/14/18 / #20180164215

Gas analyzer

A gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit electromagnetic radiation into the gas chamber, the electromagnetic radiation being adapted to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber, a collimator configured to collimate the electromagnetic radiation emitted by the radiation source, and a sensor configured to detect a physical quantity indicative of a degree of interaction between the electromagnetic radiation emitted by the radiation source and the gas to be analyzed.. . ... Infineon Technologies Ag

06/14/18 / #20180164131

Calibration of an angle sensor without a need for regular rotation

A device may obtain raw sensor data, collected by a sensing device, including a set of signal values and a set of temperature values corresponding to the set of signal values. The set of signal values may correspond to a magnetic field present at the sensing device. ... Infineon Technologies Ag

06/14/18 / #20180162183

Single axis earth magnetic field sensor for motion detection in tpms application

A sensor module is provided that includes a magnetic sensor and a microcontroller. The magnetic sensor is configured to measure a magnitude of a magnetic field component of an earth magnetic field projected on a sensing axis of the magnetic sensor and is configured to generate a measurement signal. ... Infineon Technologies Ag

06/07/18 / #20180159562

System and method for a radio frequency filter

In accordance with an embodiment, a circuit includes a plurality of filter circuits having a first port, a second port and a third port, where a second port of a first of the plurality of filter circuits is coupled to a first port of a second of the plurality of filter circuits, and each of the plurality of filter circuits includes a first passive filter, a second passive filter, a first coupler and a combining network. The first coupler includes an input port coupled to the first port, an isolated port coupled to the second port, a first phase shifted port coupled to the first passive filter and a second phase shifted port coupled to the second passive filter, and the combining network includes a first input coupled to the first passive filter, a second input coupled to the second passive filter, and an output coupled to the third port.. ... Infineon Technologies Ag

06/07/18 / #20180159219

Device system and method for radio frequency signal path calibration

Devices, methods and systems are disclosed relating to rf signals. A device may comprise a clock input terminal, a variable delay circuit coupled to the clock input terminal and a test terminal as well as a reference signal generator coupled to the variable delay circuit.. ... Infineon Technologies Ag

06/07/18 / #20180158941

Semiconductor device

In an embodiment, a semiconductor device includes a substrate, a group iii nitride based transistor arranged on a front surface of the substrate, and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the substrate, and conductive material extending from the front surface to the rear surface of the substrate. ... Infineon Technologies Ag

06/07/18 / #20180158937

Bipolar transistor with superjunction structure

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. ... Infineon Technologies Ag

06/07/18 / #20180158920

Semiconductor device with diode region and trench gate structure

A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 ev, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. ... Infineon Technologies Ag

06/07/18 / #20180158916

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. ... Infineon Technologies Ag

06/07/18 / #20180158759

Chip package and a wafer level package

Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.. . ... Infineon Technologies Ag

06/07/18 / #20180158534

Memory circuit and method of operating a memory circuit

In various embodiments, a memory circuit is provided. The memory circuit may include a plurality of electrically programmable memory cells arranged in an electrically programmable non-volatile memory cell array along a plurality of rows and a plurality of columns, a plurality of word lines, each word line coupled with a plurality of word portions of the plurality of memory cells, wherein each word portion is configured to store a data word, and at least one overlay word line coupled with a plurality of overlay portions, each overlay portion comprising a plurality of overlay memory cells, wherein each of the plurality of overlay portions comprises an overlay word, wherein the memory circuit is configured to read, for each of the plurality of word lines, from each of the word portions simultaneously with an overlay portion of the plurality of overlay portions, thereby providing, as an output of the read operation, a result of a logic operation performed on the data word and the overlay word.. ... Infineon Technologies Ag

06/07/18 / #20180156706

Apparatus for analysing the particulate matter content of an aerosol

An apparatus for analysing the particulate matter content of an aerosol includes an aerosol chamber configured to receive an aerosol, the particulate matter content of which should be analysed, at least one ultrasonic generator configured to produce ultrasonic waves in the aerosol received in the aerosol chamber, an ultrasonic detector configured to detect ultrasonic waves produced by the at least one ultrasonic generator in the aerosol, and an evaluator having a data exchange communication link with the ultrasonic detector and configured to ascertain the matter content on the basis of signals output by the ultrasonic detector. The ultrasonic generator and the ultrasonic detector are positioned relative to one another such that a path length to be traversed by ultrasonic waves between the ultrasonic generator and the ultrasonic detector is less than 1 cm.. ... Infineon Technologies Ag

05/31/18 / #20180153013

Modulated quasi-resonant peak-current-mode control

Driver circuitry is configured to generate a control signal for a switching device that controls supply of load current to a load. The driver circuitry includes current control circuitry, modulation circuitry, and signal generation circuitry. ... Infineon Technologies Ag

05/31/18 / #20180151765

Controlling of photo-generated charge carriers

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region. ... Infineon Technologies Ag

05/31/18 / #20180151244

Memory circuit and method of operating a memory circuit

A memory circuit may include a plurality of electrically programmable memory cells arranged in a non-volatile memory cell array along a rows and columns, a plurality of word lines, each word line coupled with one or more memory cells, a plurality of non-volatile marking memory cells, wherein at least one word line of the plurality of word lines is associated with one or more marking memory cells, and a plurality of marking bit lines, each associated with marking memory cells, a plurality of marking source lines, each associated with marking memory cells, wherein, for marking memory cells, a physical connection from an associated marking source line and/or from an associated marking bit line to the marking memory cells defines those marking memory cells to a non-changeable state, wherein the marking memory cells are configured to identify the associated word line of respective marking memory cells in the non-changeable memory state.. . ... Infineon Technologies Ag

05/31/18 / #20180148623

Resin-impregnated boron nitride body and a method for producing a resin-impregnated boron nitride body

A resin-impregnated boron nitride body includes a polymer-derived boron nitride and a resin. A process for manufacturing such a resin-impregnated boron nitride body includes: polymerizing a boron nitride molecular precursor into a preceramic polymer shaping the preceramic polymer to form an infusible polymer body; submitting the polymer body to a thermal treatment to obtain a boron nitride body; impregnating the boron nitride body with a resin; and curing the resin.. ... Infineon Technologies Ag

05/31/18 / #20180148322

Semiconductor package with a through port for sensor applications and methods of manufacture

A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.. ... Infineon Technologies Ag

05/24/18 / #20180146566

Method for producing a semiconductor module arrangement

A method of producing a semiconductor module arrangement includes providing a first subassembly having a number n1 of first adjustment openings, a second subassembly having a number n2 of second adjustment openings and a third subassembly having a plurality of adjustment pins which are fixedly connected to one another, the first subassembly, the second subassembly and the third subassembly being independent of one another and not connected to one another. The first subassembly, the second subassembly and the third subassembly are arranged relative to one another in such a way that each of the adjustment pins engages into one of the first adjustment openings and/or into one of the second adjustment openings.. ... Infineon Technologies Ag

05/24/18 / #20180146512

Infrared emitter arrangement and method for producing an infrared emitter arrangement

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. ... Infineon Technologies Ag

05/24/18 / #20180146297

Method for operating a sensor, and sensor

In various embodiments, a method for operating a sensor is provided. The method includes intermittently generating an operating current in the sensor, generating a reactive current in the sensor when the operating current is not generated, and not generating the reactive current when the operating current is generated. ... Infineon Technologies Ag

05/24/18 / #20180145718

Transmitter/receiver module for millimeter wave 5g mimo communication systems

A transmit/receive module includes an integrated control circuit. The integrated control circuit includes an rfic input terminal, multiple pairs of i/o terminals, a power splitter/combiner having an input connected to the rfic input terminal, a plurality of phase shifters connected between outputs of the power splitter/combiner and the i/o terminals, and a power sensor connected to each one of the i/o terminals. ... Infineon Technologies Ag

05/24/18 / #20180145673

Switching circuitry, dc-interface and method for operating a switching circuitry

A switching circuitry is configured to provide, during an on-state, a connection between a first port and second port and to electrically disconnect, during an off-state, the first port from the second port. The switching interface comprises a first and a second cascode transistor element having an applicable operational voltage and comprising a control terminal, wherein the first cascode transistor element is connected with the first port of the switching interface and wherein the second cascode transistor element is connected with the second port of the switching interface. ... Infineon Technologies Ag

05/24/18 / #20180145641

Rf power detector circuits

A radio frequency (rf) power detector includes a first circuit having a first rectifying diode with a first terminal coupled to a first power supply voltage node. The first circuit also includes an input terminal coupled to a second terminal of the first rectifying diode, a first transistor having a first collector coupled to the second terminal of the first rectifying diode and a first emitter coupled to a reference voltage node, and a second transistor having a second emitter coupled to the reference voltage node and a second collector coupled to a second power supply voltage node. ... Infineon Technologies Ag

05/24/18 / #20180145161

Semiconductor device with separation regions

According to an embodiment of a semiconductor device, the device includes first and second trenches formed in a semiconductor body and an electrode disposed in each of the trenches. One of the electrodes is a gate electrode, and the other electrode is electrically disconnected from the gate electrode. ... Infineon Technologies Ag

05/24/18 / #20180145045

Terminal structure of a power semiconductor device

A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. ... Infineon Technologies Ag

05/24/18 / #20180145043

Rf power package having planar tuning lines

An rf power package includes a substrate having a metallized part and an insulating part, an rf power transistor die embedded in or attached to the substrate, the rf power transistor die having a die input terminal, a die output terminal, an input impedance and an output impedance, a package input terminal formed in the metallized part or attached to the insulating part of the substrate, a package output terminal formed in the metallized part or attached to the insulating part of the substrate, and a first plurality of planar tuning lines formed in the metallized part of the substrate and electrically connecting the die output terminal to the package output terminal. The first plurality of planar tuning lines is shaped so as to transform the output impedance at the die output terminal to a higher target level at the package output terminal.. ... Infineon Technologies Ag

05/24/18 / #20180144982

Semiconductor devices and methods for manufacturing semiconductor devices

A method is disclosed for use in manufacturing semiconductor dice. The method comprises providing a wafer substrate that comprises dicing areas, providing a first etch stop material outside the dicing areas, and etching the wafer substrate down to the first etch stop material. ... Infineon Technologies Ag

05/24/18 / #20180144974

Method of wafer thinning and realizing backside metal structures

In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming openings partially filled with a sacrificial material, where the openings extend into a semiconductor substrate from a first side. A void region is formed in a central region of the openings. ... Infineon Technologies Ag

05/24/18 / #20180144854

Rotary encoder with shielded magnet

A magnetic set-up for use in a rotary encoder is disclosed. The set-up includes a permanent magnet arrangement including at least one permanent magnet, which is rotatable with respect to a rotation axis, and a soft magnetic sleeve encompassing the rotation axis and thus the permanent magnet arrangement for shielding against external magnetic fields. ... Infineon Technologies Ag

05/24/18 / #20180143268

Current sensor positioning error correction using auxiliary hall cells

A current sensor may comprise a first hall cell, a second hall cell, a third hall cell, a fourth hall cell, and a fifth hall cell to a set of magnetic field values associated with a magnetic field generated by a current passing through a current rail. The second hall cell may be positioned at a first distance from the first hall cell, and the third hall cell may be positioned at a second distance from the first hall cell such that the third hall cell is positioned between the first hall cell and the second hall cell. ... Infineon Technologies Ag

05/24/18 / #20180141802

Micro-electro-mechanical system sensor devices

A mems sensor device includes an electrically conductive membrane and an electrically conductive closed loop structure. The closed loop structure is arranged in proximity to the membrane and is configured to reduce eddy currents in the membrane.. ... Infineon Technologies Ag

05/17/18 / #20180138353

Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. ... Infineon Technologies Ag

05/17/18 / #20180138301

Power semiconductor transistor having fully depleted channel region

A power semiconductor transistor includes a trench extending into a semiconductor body along a vertical direction and having first and second trench sidewalls and a trench bottom, an electrode in the trench electrically insulated from the semiconductor body, drift and source regions of a first conductivity type, a semiconductor channel region of a second conductivity type laterally adjacent the first trench sidewall and separating the source and drift regions, and a guidance zone. The guidance zone includes a bar section of the second conductivity type extending along the second trench sidewall or along a sidewall of another trench in the vertical direction to a depth in the semiconductor body deeper than the trench bottom, and a plateau section of the second conductivity type adjoining the bar section and extending under the trench bottom towards the semiconductor channel region. ... Infineon Technologies Ag

05/17/18 / #20180138266

Sic-based superjunction semiconductor device

A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions. ... Infineon Technologies Ag

05/17/18 / #20180138169

Semiconductor devices and methods for operating semiconductor devices

A semiconductor device includes a plurality of forward conducting insulated-gate bipolar transistor cells configured to conduct a current in a forward operating mode of the semiconductor device and to block a current in a reverse operating mode of the semiconductor device. The semiconductor device also includes a plurality of reverse conducting insulated-gate bipolar transistor cells configured to conduct a current both in the forward operating mode and in the reverse operating mode. ... Infineon Technologies Ag

05/17/18 / #20180138120

Semiconductor device with metallization structure on opposite sides of a semiconductor portion

A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. ... Infineon Technologies Ag

05/17/18 / #20180138111

Package with interconnections having different melting temperatures

A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.. . ... Infineon Technologies Ag

05/17/18 / #20180138086

Substrate and method

In an embodiment, a substrate includes semiconductor material and a conductive via. The conductive via includes a via in the substrate, a conductive plug filling a first portion of the via, and a conductive liner layer that lines side walls of a second portion of the via and is electrically coupled to the conductive plug. ... Infineon Technologies Ag

05/17/18 / #20180136120

Radar spectroscopy based gas sensor

A gas sensor includes a transmitter that may transmit a first radar signal, associated with a resonance peak corresponding to a first gas, through a space including the first gas and a second gas. The first gas may absorb a portion of the first radar signal to create a second radar signal. ... Infineon Technologies Ag

05/17/18 / #20180136064

Sensor device including sensor unit for a gaseous medium

A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. ... Infineon Technologies Ag

05/10/18 / #20180132024

System and method for signal read-out using source follower feedback

An embodiment amplifier circuit includes a pair of subcircuits that includes a first subcircuit and a second subcircuit, each of which includes a buffer amplifier and a feedback circuit that includes a feedback capacitor. The amplifier circuit also includes a pair of output terminals. ... Infineon Technologies Ag

05/10/18 / #20180131387

Program flow monitoring for deterministic firmware functions

The present disclosure relates to a safety system having a memory unit configured to store a series of executable instructions. In some embodiments, the executable instructions are grouped into code parts, and each code part is assigned a predefined code value. ... Infineon Technologies Ag

05/10/18 / #20180131298

Auto-synchronization of brushless dc motors

A controller for controlling a multiphase brushless direct current (bldc) motor is described. The controller may be configured to determine that the multiphase bldc motor is operating in a phase delay state in response to determining that an indication of a shunt current for the multiphase bldc motor satisfies a shunt current threshold and determine that the multiphase bldc motor is operating in a phase advance state in response to determining that a set of phase-to-ground voltages for the multiphase bldc motor does not indicate a zero-crossing point. ... Infineon Technologies Ag

05/10/18 / #20180130914

Graded-index structure for optical systems

An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. ... Infineon Technologies Ag

05/10/18 / #20180128694

Temperature sensing for usb type-c cables

According to an embodiment of a type-c usb cable, the type-c usb cable comprises a near side cable plug, a far side cable plug, a single emarker ic integrated in one of the cable plugs, the single emarker ic including an internal temperature sensing element, a temperature sensor integrated in the opposite cable plug as the single emarker ic, and a wire connecting the temperature sensor to the single emarker ic. The single emarker ic is configured to generate temperature measurement information based on temperature sensed by the internal temperature sensing element of the single emarker ic and temperature sensed by the temperature sensor and carried to the emarker ic over the wire that connects the temperature sensor to the single emarker ic.. ... Infineon Technologies Ag

05/10/18 / #20180127267

Mems sensor package systems and methods

Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (mems) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.. ... Infineon Technologies Ag

05/03/18 / #20180123823

Bus interface with bi-directional, one-wire communication and individual select lines

A system may include a plurality of slave devices connected to a master device via a bus interface that includes a communication line and a plurality of select lines. The communication line may connect the master device to each of the plurality of slave devices and may permit bi-directional, one-wire communication among the master device and the plurality of slave devices. ... Infineon Technologies Ag

05/03/18 / #20180122931

Semiconductor device and transistor cell having a diode region

According to an embodiment of a semiconductor device, the device includes a semiconductor body with a drift region and neighboring device cells integrated in the semiconductor body. Each device cell includes: a body region arranged between a source region and the drift region; a diode region and a pn junction between the diode region and the drift region; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; and a gate electrode arranged in the trench and dielectrically insulated from the semiconductor body by a gate dielectric. ... Infineon Technologies Ag

05/03/18 / #20180122918

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers is provided. The method includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. ... Infineon Technologies Ag

05/03/18 / #20180122895

Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors

Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. ... Infineon Technologies Ag

05/03/18 / #20180122720

Package with vertically spaced partially encapsulated contact structures

A package comprising at least one electronic chip, an encapsulant encapsulating at least part of the at least one electronic chip, a first electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one first terminal of at least one of the at least one electronic chip, and a second electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one second terminal of at least one of the at least one electronic chip, wherein at least a portion of the first electrically conductive contact structure and at least a portion of the second electrically conductive contact structure within the encapsulant are spaced in a direction between two opposing main surfaces of the package.. . ... Infineon Technologies Ag

05/03/18 / #20180121369

Data processing device and method for cryptographic processing of data

According to an embodiment, a data processing device is described comprising a deformer configured to deform a first data block in accordance with a first seed, a seed generator configured to generate a sequence of second seeds, wherein the sequence of second seeds comprises the first seed, a cryptographic processor configured to receive the deformed first data block and, for each second seed, to deform the deformed first data block in accordance with the second seed, to generate a sequence of second data blocks and to cryptographically process each second data block of the sequence of second data blocks to generate a sequence of processed data blocks and an extractor configured to extract a result of the cryptographic processing of the first data block from the sequence of processed data blocks.. . ... Infineon Technologies Ag

05/03/18 / #20180121272

Deterministic code fingerprinting for program flow monitoring

A programmable system with program flow monitoring is provided. A memory is configured to store a set of instructions, where the instructions are configured to be executed in a predefined order. ... Infineon Technologies Ag

05/03/18 / #20180120266

Photoacoustic gas detector

A photoacoustic gas detector may include: a gas chamber configured to receive a gas to be analyzed therein, an excitation element configured to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber in a time-varying fashion, thereby generating pressure differences, a sensor configured to detect pressure differences generated by the excitation element, and a pump configured to pump gas between the exterior of the photoacoustic gas detector and the gas chamber.. . ... Infineon Technologies Ag

04/19/18 / #20180109892

System and method for a transducer

According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. ... Infineon Technologies Ag

04/19/18 / #20180109254

Controlling at least two transistors

A device is suggested comprising at least two transistors, each of the transistors comprising a current path and a control terminal, wherein the current paths of the at least two transistors are arranged in parallel, wherein the control terminals of the at least two transistors are connected to a control node via at least one voltage drop component. Also, a method to efficiently control at least two transistors is provided.. ... Infineon Technologies Ag

04/19/18 / #20180109251

Driver circuit for electronic switch

A driver circuit for an electronic switch is described herein. According to one embodiment the driver circuit includes an input buffer with an input node for receiving a buffer input signal, a pull-down circuit coupled to the input node and a ground node, and a pull-up circuit coupled to the input node and a supply node. ... Infineon Technologies Ag

04/19/18 / #20180109206

Plate, transducer and methods for making and operating a transducer

A plate, a transducer, a method for making a transducer, and a method for operating a transducer are disclosed. An embodiment comprises a plate comprising a first material layer comprising a first stress, a second material layer arranged beneath the first material layer, the second material layer comprising a second stress, an opening arranged in the first material layer and the second material layer, and an extension extending into opening, wherein the extension comprises a portion of the first material layer and a portion of the second material layer, and wherein the extension is curved away from a top surface of the plate based on a difference in the first stress and the second stress.. ... Infineon Technologies Ag

04/19/18 / #20180108675

Integrated circuit including buried cavity and manufacturing method

In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. ... Infineon Technologies Ag

04/19/18 / #20180108648

Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure

According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.. . ... Infineon Technologies Ag

04/19/18 / #20180108622

Rf module

In accordance with an embodiment, an rf module includes a bulk semiconductor substrate with at least one integrated rf component integrated in a first main surface region of the bulk semiconductor substrate; an insulator structure surrounding a side surface region of the bulk semiconductor substrate; a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure; and a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator structure include different materials.. . ... Infineon Technologies Ag

04/19/18 / #20180108616

Device having substrate with conductive pillars

A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. ... Infineon Technologies Ag

04/19/18 / #20180108567

Semiconductor device and a method for forming a semiconductor device

A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. ... Infineon Technologies Ag

04/19/18 / #20180106891

3di sensor depth calibration concept using difference frequency approach

A three-dimensional image 3di system includes a modulator configured to generate a first modulation signal and a second modulation signal having a predetermined frequency difference, an illumination source configured to generate a light signal modulated by the first modulation signal, and a sensor core including a pixel array modulated by the second modulation signal. At least one pixel of the pixel array is configured to receive a reflected modulated light signal and to demodulate the reflected modulated light signal using the second modulation signal during an image acquisition to generate a measurement signal. ... Infineon Technologies Ag

04/12/18 / #20180103325

Sound transducer structure and method for manufacturing a sound transducer structure

For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. ... Infineon Technologies Ag

04/12/18 / #20180102786

Receiver, sender, method for retrieving an additional datum from a signal and method for transmitting a datum and an additional datum in a signal

A receiver includes a receiver circuit to receive a first transition in a first direction, a second transition in a second, different direction after the first transition and a third transition in the first transition after the second transition of a signal. A first time period between the first and third transitions is indicative of a datum to be received. ... Infineon Technologies Ag

04/12/18 / #20180102423

Semiconductor device having a variable carbon concentration

A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. ... Infineon Technologies Ag

04/12/18 / #20180102302

Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet

A chip carrier which comprises a thermally conductive and electrically insulating sheet, a first electrically conductive structure on a first main surface of the sheet, and a second electrically conductive structure on a second main surface of the sheet, wherein the first electrically conductive structure and the second electrically conductive structure extend beyond a lateral edge of the sheet.. . ... Infineon Technologies Ag

04/12/18 / #20180102300

Connectable package extender for semiconductor device package

A semiconductor packaging system includes a semiconductor device package having a semiconductor chip with two or more terminals and a protective structure encapsulating and electrically insulating the semiconductor chip. Two or more electrical conductors that are each electrically connected to one of the terminals extend to an outer surface of the protective structure. ... Infineon Technologies Ag

04/12/18 / #20180101758

Multicolored logo on smart card modules

In various embodiments, a smart card module is provided. The smart card module may include an electronic circuit in or on a carrier, a smart card module contact layer, which is coupled to the electronic circuit and provides a plurality of smart card module contacts, a mirror layer on the smart card module contact layer, said mirror layer at least partly covering the smart card module contacts, and an optically translucent, electrically conductive oxide layer, which covers the mirror layer. ... Infineon Technologies Ag

04/12/18 / #20180101458

System on chip integrity verification method and system

Methods and systems for checking the integrity of a system on chip (soc) are described. The soc can include a controller and one or more registers. ... Infineon Technologies Ag

04/12/18 / #20180101145

Overtemperature condition identified using a signal characteristic

A sensor may bias a signal to have a characteristic. The characteristic of the signal may depend on a temperature of the sensor such that the characteristic of the signal is outside of a permitted range, associated with the characteristic, when the temperature of the sensor satisfies a temperature threshold. ... Infineon Technologies Ag

04/12/18 / #20180099867

Mems device and mems vacuum microphone

In accordance with an embodiment, a mems device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.. ... Infineon Technologies Ag

04/05/18 / #20180097425

Multi-gate half-bridge circuit and package

In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including a first load terminal electrically connected to the second load terminal of the first switch, a second load terminal, and a control terminal.. ... Infineon Technologies Ag

04/05/18 / #20180097398

Current reduction for activated load

In one example, a circuit includes an input, an output, and a control module. The input is configured to receive a control signal indicating whether to activate or deactivate a load. ... Infineon Technologies Ag

04/05/18 / #20180097093

Power semiconductor device

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body having a front side, a backside, a first load terminal, and a drift region. ... Infineon Technologies Ag

04/05/18 / #20180097074

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench, performing an ion implantation process, forming a cover layer, and patterning the covering layer, thereby forming an uncovered area and a covered area of the oxide layer, respectively. The method further includes performing an isotropic etching process thereby removing portions of the uncovered area of the oxide layer and removing a part of a surface portion of the covered area adjacent to the uncovered portions, and removing remaining portions of the covering layer.. ... Infineon Technologies Ag

04/05/18 / #20180097064

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.. . ... Infineon Technologies Ag

04/05/18 / #20180096984

Method for manufacturing an electronic device and electronic device

A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remaining electrically connected with each other via the electrical connection layer.. . ... Infineon Technologies Ag

04/05/18 / #20180096966

Multi-purpose non-linear semiconductor package assembly line

A method of producing packaged semiconductor devices includes providing a first packaging substrate panel. A second packaging substrate panel is provided. ... Infineon Technologies Ag

04/05/18 / #20180096924

Chip packages, chip arrangements, a circuit board, and methods for manufacturing chip packages

A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.. . ... Infineon Technologies Ag

04/05/18 / #20180096919

Chip carrier configured for delamination-free encapsulation and stable sintering

A chip carrier for carrying an electronic chip, wherein the chip carrier comprises a mounting section configured for mounting an electronic chip by sintering, and an encapsulation section configured for being encapsulated by an encapsulant.. . ... Infineon Technologies Ag

04/05/18 / #20180095145

Magnetic field sensor circuit in package with means to add a signal from a coil

Sensor devices, systems and methods are provided, including a first magnetic sensor configured to measure a first magnetic field in a first frequency range and output a first sensor signal based on the measured first magnetic field, a second magnetic sensor configured to measure a second magnetic field in a second frequency range and output a second sensor signal based on the measured second magnetic field, and a sensor circuit configured to receive the first and the second sensor signals, combine the first and the second sensor signals, and output a combined sensor signal. The first magnetic sensor and the second magnetic sensor are configured to share a cross-over frequency.. ... Infineon Technologies Ag

04/05/18 / #20180093927

Method for producing a metal-ceramic substrate, and a metal-ceramic substrate

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.. ... Infineon Technologies Ag

03/29/18 / #20180091149

Circuit and method for checking the integrity of a control signal

. . According to an embodiment, a circuit is described comprising a plurality of flip-flops, a control circuit configured to provide a control signal to each flip-flop of the plurality of flip-flops and an integrity checking circuit connected to the control circuit and to the plurality of flip-flops configured to check whether the flip-flops receive the control signal as provided by the control circuit.. . ... Infineon Technologies Ag

03/29/18 / #20180090928

System and method for power supply ripple compensation

According to an embodiment, a power compensation circuit is configured to be coupled to a power supply. The power compensation circuit includes a measurement circuit and a compensation circuit. ... Infineon Technologies Ag

03/29/18 / #20180090924

Power switch device

Power switch devices and methods are provided where an undervoltage event in a supply voltage is detected. Information regarding the undervoltage event is stored in a memory element. ... Infineon Technologies Ag

03/29/18 / #20180090594

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

A semiconductor device includes a semiconductor mesa having source zones and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are provided on opposite sides of the semiconductor mesa, at least one of the electrode structures having a gate electrode configured to control a charge carrier flow through the at least one body zone. ... Infineon Technologies Ag

03/29/18 / #20180090565

Semiconductor device and method for forming a semiconductor device

A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. ... Infineon Technologies Ag

03/29/18 / #20180090455

Semiconductor device including a ldmos transistor, monolithic microwave integrated circuit and method

In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an ldmos transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.. . ... Infineon Technologies Ag

03/29/18 / #20180088042

Method and assembly for determining the carbon content in silicon

A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. ... Infineon Technologies Ag

03/29/18 / #20180087930

True-power-on and diagnostic-capable incremental interface for angular sensors

The current disclosure relates to an angular sensor. The angular sensor includes a sensing module, a digital processor and an incremental interface. ... Infineon Technologies Ag

03/29/18 / #20180087889

Magnetic angle sensor device and method of operation

A magnetic angle sensor device and a method for operating such device is provided. The magnetic angle sensor device includes a shaft rotatable around a rotation axis; a magnetic field source coupled to the shaft; a first magnetic angle sensor configured to generate a first signal that represents a first angle based on a first diametric magnetic field from the magnetic field source applied to the first magnetic angle sensor; a second magnetic angle sensor configured to generate a second signal that represents a second angle based on a second diametric magnetic field from the magnetic field source applied to the second magnetic angle sensor; and a combining circuit configured to determine a combined rotation angle based on the first signal and on the second signal.. ... Infineon Technologies Ag

03/29/18 / #20180087888

Magnetic angle sensor device and method of operation

An embodiment relates to a magnetic angle sensor device comprising a first group of magnetic angle sensors and a second group of magnetic angle sensors, wherein the first group of magnetic angle sensors and the second group of magnetic angle sensors are located on different positions along a straight line, wherein the first group of magnetic angle sensors comprises at least one first type of angle sensor and at least one second type of angle sensor, wherein the second group of magnetic angle sensors comprises the at least one first type of angle sensor and the at least one second type of angle sensor, wherein the at least one first type of angle sensor is sensitive to detect a first magnetic field component in a first direction and the at least one second type of angle sensor is sensitive to detect a second magnetic field component in a second direction, and wherein a combined rotation angle is determined based on the detected first magnetic field components and the detected second magnetic field components.. . ... Infineon Technologies Ag








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