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Infineon Technologies Ag patents


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Microelectromechanical loudspeaker

A microelectromechanical loudspeaker may include: a plurality of elementary loudspeakers each including a drive unit and a diaphragm deflectable by the drive unit, and a controller configured to respectively supply control signals to the drive units. The drive units may be respectively configured to deflect the corresponding diaphragms according to the respective control signals supplied by the controller to generate acoustic waves. ... Infineon Technologies Ag

Circuit and method for driving a laser diode

A driver circuit for driving a laser diode is described herein. In accordance with a first exemplary embodiment the driver circuit includes a first electronic switch connected to an output node that is configured to be operably connected to a laser diode. ... Infineon Technologies Ag

Laser diode module

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. ... Infineon Technologies Ag

Semiconductor device with transistor cells and enhancement cells

A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. ... Infineon Technologies Ag

Method for processing a semiconductor workpiece and semiconductor device

A method for processing a semiconductor workpiece, including: forming a trench structure in a first region of a semiconductor workpiece, extending from a surface of the semiconductor workpiece to a first depth, forming at least one recess in a second region of the semiconductor workpiece laterally next to the first region, the recess extending from the surface of the semiconductor workpiece into the semiconductor workpiece to a second depth less than the first depth; forming a material layer over the semiconductor workpiece, the material layer filling the trench structure and recess and covering the surface of the semiconductor workpiece in the first region and in the second region; and planarizing the semiconductor workpiece to partially remove the material layer in the first region and in the second region, wherein the material layer remains in the trench structure and in the at least one recess.. . ... Infineon Technologies Ag

Silicon carbide semiconductor device and method of manufacturing

A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body. The trench structure includes an auxiliary electrode at a bottom of the trench structure and a gate electrode arranged between the auxiliary electrode and the first surface. ... Infineon Technologies Ag

Semiconductor package for multiphase circuitry device

In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from the power supply element. The device further includes a high-side semiconductor die including at least two high-side transistors, wherein each high-side transistor of the at least two high-side transistors is electrically connected to the power supply element. ... Infineon Technologies Ag

Ldmos transistor structure and method of manufacture

In an embodiment, a method includes forming a first opening in a front surface of a semiconductor substrate including a ldmos transistor structure, and covering the first opening with a first layer to form an enclosed cavity defined by material of the semiconductor substrate and the first layer. The material of the first layer lines sidewalls of the enclosed cavity.. ... Infineon Technologies Ag

Power semiconductor package having a parallel plate waveguide

A power semiconductor package includes a first group of semiconductor dies attached to a first side of a substrate and evenly distributed over a width of the substrate and a second group of semiconductor dies attached to the first side of the substrate and evenly distributed over the substrate width. Each die in the first and second groups has all terminals at one side which is attached to the first side of the substrate and an insulated or isolated face at a side opposite the side with the terminals. ... Infineon Technologies Ag

Method for manufacturing a semiconductor device comprising etching a semiconductor material

According to embodiments, a method for manufacturing a semiconductor device includes forming a mask comprising a pattern of inert structures on a side of a first main surface of a semiconductor substrate. A semiconductor layer is formed over the first main surface, and the semiconductor substrate is thinned from a second main surface opposite to the first main surface. ... Infineon Technologies Ag

Apparatus having a cavity structure and method for producing same

The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure. ... Infineon Technologies Ag

Light emitting diode driver for load and supply changes

In one example, a system includes a load module, a power module, a series module, and a control module. The power module is configured to generate a supply power. ... Infineon Technologies Ag

Transistor with integrated active protection

In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.. . ... Infineon Technologies Ag

Transistor device

Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. ... Infineon Technologies Ag

09/20/18 / #20180269865

Overvoltage protection

A drive device adapted to drive a semiconductor power device, wherein the drive device comprises a drive circuit comprising a first terminal adapted for connection to a first terminal of the power device, a gate terminal adapted to provide a driving signal for a gate terminal of the power device, a sensor for detecting overvoltage conditions at the first terminal of the power device, and wherein the drive circuit is adapted to modify the driving signal when the sensor detects an indication of an overvoltage condition, and wherein the drive circuit including the sensor is integrated onto a single substrate.. . ... Infineon Technologies Ag

09/20/18 / #20180269845

Reflection type phase shifter with active device tuning

A phase shifter includes first and second rf terminals, a reference potential terminal; a lumped element lc network connected to the first and second rf terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element lc network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. ... Infineon Technologies Ag

09/20/18 / #20180269833

System and method for a dual-core vco

In accordance with an embodiment, a method of operating a voltage controlled oscillator (vco) includes generating a first oscillating signal in a first vco core and generating a second oscillating signal in a second vco core, such that the first oscillating signal and the second oscillating signal have a same frequency and a fixed phase offset. The vco includes the first vco core and the second vco core, and each vco core includes a pair of transistors. ... Infineon Technologies Ag

09/20/18 / #20180269304

N-channel bipolar power semiconductor device with p-layer in the drift volume

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. ... Infineon Technologies Ag

09/20/18 / #20180269285

Insulated gate bipolar transistor device having a fin structure

A transistor device includes a first silicon nanowire array-mosfet and a second silicon nanowire array-mosfet integrated with a bulk drift region. The first silicon nanowire array-mosfet is configured as an n-mosfet by substantially only accommodating an electron current, and the second silicon nanowire array-mosfet is configured as a p-mosfet by substantially only accommodating a hole electron current. ... Infineon Technologies Ag

09/20/18 / #20180269279

Semiconductor device including an ldmos transistor and a resurf structure

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 ohm.cm, a front surface and a rear surface. An ldmos transistor is arranged in the semiconductor substrate. ... Infineon Technologies Ag

09/20/18 / #20180267408

Reticle and exposure method including projection of a reticle pattern into neighboring exposure fields

An exposure method includes projecting a reticle pattern into a first exposure field of a photoresist layer, wherein the reticle pattern includes first and second line patterns on opposite edges of the reticle pattern and wherein at least the first line pattern includes an end section through which light flux decreases outwards. The reticle pattern is further projected into a second exposure field of the photoresist layer, wherein a first tapering projection zone of the end section of the first line pattern in the second exposure field overlaps a projection area of the second line pattern in the first exposure field.. ... Infineon Technologies Ag

09/20/18 / #20180265354

Glass piece and methods of manufacturing glass pieces and semiconductor devices with glass pieces

A semiconductor element is formed in a mesa portion of a semiconductor substrate. A cavity is formed in a working surface of the semiconductor substrate. ... Infineon Technologies Ag

09/06/18 / #20180255613

Driver circuit for automatic detection and synchronization of dynamic loads

An example method for preventing overcurrent in light-emitting diode (led) chains comprises deactivating a current regulation control loop connected to a plurality of led chains; regulating, via a voltage regulation control loop, a forward voltage of the plurality of led chains; upon determining that a forward voltage of the plurality of led chains is equal to a target operating voltage for a subset of the plurality of led chains, bypassing at least one of the plurality of led chains such that only the subset of the plurality of led chains is connected to the current regulation control loop; and upon determining that an output current of the subset of the plurality of led chains is equal to a target operating current for the subset of the plurality of led chains: deactivating the voltage regulation control loop; and activating the current regulation control loop.. . ... Infineon Technologies Ag

09/06/18 / #20180255402

Capacitive mems device, capacitive mems sound transducer, method for forming a capacitive mems device, and method for operating a capacitive mems device

A capacitive mems device, a capacitive mems sound transducer, a method for forming a capacitive mems device and a method for operating a capacitive mems device are disclosed. In an embodiment the capacitive mems device includes a first electrode structure comprising a first conductive layer and a second electrode structure comprising a second conductive layer, wherein the second conductive layer at least partially opposes the first conductive layer, and wherein the second conductive layer includes a multiple segmentation which provides an electrical isolation between at least three portions of the second conductive layer.. ... Infineon Technologies Ag

09/06/18 / #20180254253

Package with different types of semiconductor dies attached to a flange

A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. ... Infineon Technologies Ag

09/06/18 / #20180252594

Device and method for determining a temperature or a temperature-dependent value usable for determining the temperature, temperature sensor, pressure sensor and combination sensor

In accordance with an embodiment, a device includes an interface configured for obtaining at least one measurement signal from a temperature sensor. In a first time interval the at least one measurement signal comprises information about a temperature-dependent voltage difference between a first temperature-dependent voltage at a first diode of the temperature sensor and a second temperature-dependent voltage at a second diode of the temperature sensor. ... Infineon Technologies Ag

08/23/18 / #20180241298

Driver circuit with current feedback

A circuit arrangement is described herein. In accordance with one exemplary embodiment, the circuit arrangement includes at least one output channel configured to be operably coupled to at least one load that is to be driven by the circuit arrangement. ... Infineon Technologies Ag

08/23/18 / #20180241204

Integrated circuit device and a device for protection of a circuit

An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. ... Infineon Technologies Ag

08/23/18 / #20180240887

Semiconductor device and method of manufacturing the same

A method for use in manufacturing an electronic component comprises forming a layered structure comprising a dielectric structure layer, a channel layer and a gate layer. The dielectric structure layer comprises a first portion and a second portion that differ from one another in respect of fixed charges. ... Infineon Technologies Ag

08/23/18 / #20180240868

Semiconductor device having a buried layer

A semiconductor device includes a semiconductor substrate of a first conductivity type. A first semiconductor layer of a second conductivity type is on the semiconductor substrate. ... Infineon Technologies Ag

08/23/18 / #20180240672

Semiconductor device having a device doping region of an electrical device arrangement

A semiconductor device includes a device doping region of an electrical device arrangement disposed in a semiconductor substrate. A portion of the device doping region has a vertical dimension of more than 500 nm and a doping concentration of greater than 1*1015 dopant atoms per cm3. ... Infineon Technologies Ag

08/23/18 / #20180240517

Processing data in memory cells of a memory

A method for reading memory cells from a memory is stated, inter alia, in which physical values are determined from a number of n memory cells, wherein n is at least three, in which the physical values are at least partially compared with one another, in which k different digital memory cell values are assigned to the n memory cells on the basis of the compared physical values, and in which a code word of an n1-, . . ... Infineon Technologies Ag

08/23/18 / #20180239664

Method for determining information on an integrity of signal processing components within a signal path, signal processing circuit and electric control unit

A method for determining information on an integrity of signal processing components within a signal path includes adding an alive signal to a signal at a first position within the signal path and detecting an added alive signal corresponding to the alive signal at a second position within the signal path. Further, the method includes determining the information on the integrity based on the detected signal.. ... Infineon Technologies Ag

08/23/18 / #20180238963

Overriding a signal in a semiconductor chip

A semiconductor chip, including an intellectual property (ip) core; and a signal forcing circuit located within the ip core, or located at a boundary of the ip core coupling the ip core with another ip core, the signal forcing circuit configured to: transmit an input signal received by the ip core as an output signal; and in response to a trigger condition, forcing an override signal as the output signal.. . ... Infineon Technologies Ag

08/23/18 / #20180238711

Angle sensor with disturbance field suppression

An angle sensor may include a first sensing element to provide a first set of output signals associated with a magnetic field produced by a rotatable magnet. The first sensing element may be arranged at a first distance from a surface of the rotatable magnet along a given direction, and may be configured to operate in a non-saturated mode. ... Infineon Technologies Ag

08/23/18 / #20180237292

Semiconductor device, microphone and methods for forming a semiconductor device

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. ... Infineon Technologies Ag

08/16/18 / #20180234774

Microelectromechanical microphone

A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.. ... Infineon Technologies Ag

08/16/18 / #20180234193

Phase and amplitude signal sensing circuit for radio frequency (rf) transmitters

A radio frequency (rf) transmitter for self-sensing power and phase of an rf signal is provided. A local oscillator (lo) is configured to generate a lo signal. ... Infineon Technologies Ag

08/16/18 / #20180234094

System and method for a driving a radio frequency switch

In accordance with an embodiment, a radio frequency (rf) switching circuit includes a plurality of series connected rf switch cells having a load path and a control node, and a switch driver coupled to the control node. Each of the plurality of series connected rf switch cells includes a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node. ... Infineon Technologies Ag

08/16/18 / #20180233470

Handling thin wafer during chip manufacture

A manufacturing method is provided which comprises forming recesses in a front side of a wafer, connecting a first temporary holding body to the front side of the recessed wafer, thereafter thinning the wafer from a back side, connecting a second temporary holding body to the back side, and thereafter removing the first temporary holding body.. . ... Infineon Technologies Ag

08/16/18 / #20180233469

Device including semiconductor chips and method for producing such device

A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip and the second semiconductor chip are arranged such that the first face of the first semiconductor chip faces in a first direction and the first face of the second semiconductor chip faces in a second direction opposite to the first direction. ... Infineon Technologies Ag

08/16/18 / #20180233438

Leadframe, semiconductor package including a leadframe and method for forming a semiconductor package

A leadframe, that is to be incorporated into a semiconductor housing is provided. The leadframe may include a first die pad, a second die pad and a plurality of contact pads. ... Infineon Technologies Ag

08/16/18 / #20180233421

Semiconductor package, assembly and module arrangements for measuring gate-to-emitter/source voltage

One or more additional sense terminals are added to discrete semiconductor packages, assemblies and semiconductor modules, including power semiconductor modules, to sense accurately the voltage between the gate and emitter/source of voltage-controlled chips, inside the package, assembly or module.. . ... Infineon Technologies Ag

08/16/18 / #20180233399

Devices with backside metal structures and methods of formation thereof

A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. ... Infineon Technologies Ag

08/16/18 / #20180233026

Alarm handling circuitry and method of handling an alarm

In various embodiments, an alarm handling circuitry is provided. The alarm handling circuitry may include a first alarm processing circuit configured to process a first received alarm and to provide a first processed alarm response signal, a second alarm processing circuit configured to process a second received alarm and to provide a second processed alarm response signal, and an interface between the first alarm processing circuit and the second alarm processing circuit configured to input an alive indication signal from the first alarm processing circuit to the second alarm processing circuit indicating whether the first alarm processing circuit is operating.. ... Infineon Technologies Ag

08/16/18 / #20180230622

Silicon ingot

A silicon ingot has opposite ends. A specific resistance, measured along an axis between the opposite ends of the silicon ingot, has at least one point of inflection where a concavity of the specific resistance changes along the axis. ... Infineon Technologies Ag

08/09/18 / #20180226967

Sensor devices and methods for transmitting sensor data, apparatus and method for controlling a sensor device, apparatuses and methods for decoding a sensor signal

A sensor device includes an output driver configured to: adjust a first time interval of the output signal between a first signal edge of a first type and a first signal edge of a second type based on a first reference value; adjust a second time interval of the output signal between the first signal edge of the second type and a second signal edge of the first type based on a second reference value; adjust a third time interval of the output signal between the second signal edge of the first type and a second signal edge of the second type based on a first data value; and adjust a fourth time interval of the output signal between the second signal edge of the second type and a third signal edge of the first type based on a second data value.. . ... Infineon Technologies Ag

08/09/18 / #20180226963

Power switch control by supply voltage terminal

A power switch device includes a switch which is configured to switch a load signal between an on state and an off state. A first terminal and a second terminal of the power switch device are configured to provide a supply voltage to the power switch device. ... Infineon Technologies Ag

08/09/18 / #20180226817

Supply voltage selection circuitry

Supply voltage switching circuitry that is configured to dynamically switch between a battery supply voltage and a boost supply voltage, that is generated from the battery supply voltage, to power half-bridge driver circuitry based on an on-going evaluation of one or more system parameters.. . ... Infineon Technologies Ag

08/09/18 / #20180226471

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

Epitaxy troughs are formed in a semiconductor substrate, wherein a matrix section of the semiconductor substrate laterally separates the epitaxy troughs and comprises a first semiconductor material. Crystalline epitaxy regions of a second semiconductor material are formed in the epitaxy troughs, wherein the second semiconductor material differs from the first semiconductor material in at least one of porosity, impurity content or defect density. ... Infineon Technologies Ag

08/09/18 / #20180226276

Method for fabricating a semiconductor chip panel

A method for fabricating a semiconductor chip is disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips, wherein each semiconductor chip comprises a first main face, a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on a carrier with the second main faces facing the carrier and applying an encapsulation material by transfer molding thereby forming the semiconductor chip panel, wherein the encapsulation material is applied so that the side faces of the semiconductor chips are covered with the encapsulation material while the first main faces are not.. ... Infineon Technologies Ag

08/09/18 / #20180226124

Method of operating a memory unit sector

Disclosed is a memory unit that includes a sector of memory cells. The sector includes a first memory cell configured to selectively take on a state representation of a first plurality of state representations and a second memory cell configured to selectively take on at least one of a second plurality of state representations. ... Infineon Technologies Ag

08/09/18 / #20180224873

Electric devices, integrated circuits, and methods for monitoring voltages

An electrical device includes a power supply circuit configured to provide a first voltage and a second voltage, and a first verification circuit configured to derive a first and a second internal voltage from the first voltage, to compare the first and second internal voltages, and to generate a first output signal based on the comparison. The electrical device includes a second verification circuit including a first input terminal for the first voltage and a second input terminal for the second voltage, and configured to compare the first and second voltages and to generate a second output signal based on the comparison. ... Infineon Technologies Ag

08/09/18 / #20180222749

Membrane components and method for forming a membrane component

A membrane component comprises a membrane structure comprising an electrically conductive membrane layer. The electrically conductive membrane layer has a suspension region and a membrane region. ... Infineon Technologies Ag

08/09/18 / #20180222744

Semiconductor device, pressure sensor, microphone, acceleration sensor and method for forming a semiconductor device

A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.. . ... Infineon Technologies Ag

08/02/18 / #20180219535

Robust trimming scheme for low power rc oscillator compatible with high temperature operation

In some embodiments, the present disclosure relates to a frequency generator having a resistor network and a capacitor network. The capacitor network has a plurality of capacitors connected in parallel with one another. ... Infineon Technologies Ag

08/02/18 / #20180219476

Switched-capacitor circuit and method of operating a switched-capacitor circuit

A switched-capacitor circuit is described herein. In accordance with one exemplary embodiment the switched-capacitor circuit includes a first input node and a second input node and an input switch unit. ... Infineon Technologies Ag

08/02/18 / #20180219352

Driving light emitting elements with reduced voltage drivers

In one example, a method includes outputting, by a power supply and across a supply node and a ground node, a supply power signal; and selectively outputting, by a driver, a power signal to a second terminal of a light emitting element that has a first terminal and the second terminal, wherein the first terminal of the light emitting element is coupled to a load node, wherein a supply terminal of the driver is coupled to the supply node, wherein a ground terminal driver is coupled to the ground node, and wherein a difference between a potential of the supply node and a potential of the ground node is less than an activation voltage of the light emitting element.. . ... Infineon Technologies Ag

08/02/18 / #20180219272

Radio frequency device packages and methods of formation thereof

A semiconductor device package includes a radio frequency front end circuit configured to process radio frequency signals, a first antenna, an antenna substrate, and a first conductive barrier. The first antenna is configured to transmit/receive a first radio frequency signal. ... Infineon Technologies Ag

08/02/18 / #20180218992

Semiconductor device, method for fabricating a semiconductor device and method for reinforcing a die in a semiconductor device

A semiconductor device includes a semiconductor die having a first main face, a second main face and side faces connecting the first main face and the second main face. The semiconductor device also includes a conductive column arranged on the first main face of the semiconductor die and electrically coupled to the semiconductor die, and an insulating body arranged on the first main face of the semiconductor die. ... Infineon Technologies Ag

08/02/18 / #20180218177

Physical uncloneable function circuit

According to one embodiment, a physical uncloneable function circuit for providing a protected output bit is described including at least one physical uncloneable function circuit element configured to output a bit of a physical uncloneable function value, a physical uncloneable function bit output terminal and a coupling circuit connected between the physical uncloneable function circuit element and the physical uncloneable function bit output terminal configured to receive a control signal, supply the bit to the physical uncloneable function bit output terminal for a first state of the control signal and supply the complement of the bit to the physical uncloneable function bit output terminal for a second state of the control signal.. . ... Infineon Technologies Ag

08/02/18 / #20180217209

Battery temperature detection

A method and a temperature detection circuit are disclosed. An example of the method includes driving an alternating current with a first frequency into a battery and detecting an imaginary part of a battery impedance at the first frequency; driving an alternating current with a second frequency different from the first frequency into the battery and detecting an imaginary part of the battery impedance at the second frequency; and calculating an intercept frequency at which the imaginary part equals a predefined value at least based on the imaginary part obtained at the first frequency and the imaginary part obtained at the second frequency.. ... Infineon Technologies Ag

07/26/18 / #20180213602

Sensor circuit and method for compensating for temperature changes

A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. ... Infineon Technologies Ag

07/26/18 / #20180213334

Microelectromechanical microphone

A microelectromechanical microphone includes a planar first electrode that is formed, at least in portions, from an electrically conductive material, a planar second electrode that is formed, at least in portions, from an electrically conductive material and that is arranged at a distance from the first electrode, a spacer that is arranged between the first electrode and the second electrode, and a membrane that is arranged in a space defined between the first electrode and the second electrode and that is displaceable in the direction of at least one of the first electrode or the second electrode. The membrane has a membrane passage opening through which the spacer extends. ... Infineon Technologies Ag

07/26/18 / #20180213324

Micro-electro-mechanical system (mems) circuit and method for reconstructing an interference variable

A micro-electro-mechanical system (mems) circuit and a method for reconstructing an interference variable are provided. The mems circuit includes a mems device configured to generate a mems signal; a control circuit configured to detect a switched-on state or switched-off state of at least one device and configured to generate a control signal at least partly depending on the switched-on state or the switched-off state; a reconstruction filter configured to determine an interference signal that is partly generated by the at least one device, using the generated control signal; and a subtractor configured to subtract the determined interference signal from the mems signal.. ... Infineon Technologies Ag

07/26/18 / #20180212781

Secured daisy chain communication

An intermediate servant device connected in a daisy chain configuration with a set of devices is described. The intermediate servant device may be configured to receive, from a previous servant device of the set of servant devices, a request for data, a first response to the request for data, and authentication information for the first response to the request for data. ... Infineon Technologies Ag

07/26/18 / #20180212085

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. ... Infineon Technologies Ag

07/26/18 / #20180211917

Semiconductor module comprising transistor chips, diode chips and driver chips arranged in a common plane

A semiconductor module is disclosed. In one example, the module includes a carrier, at least one semiconductor transistor disposed on the carrier, at least one semiconductor diode disposed on the carrier, at least one semiconductor driver chip disposed on the carrier, a plurality of external connectors, and an encapsulation layer covering the carrier, the semiconductor transistor, the semiconductor diode, and the semiconductor driver chip. ... Infineon Technologies Ag

07/26/18 / #20180211907

Semiconductor package with heat slug and rivet free die attach area

A method of forming a semiconductor device package includes providing a lead frame having a peripheral structure and a heat slug having an upper and lower surface, the heat slug being attached to the peripheral structure. A semiconductor die is attached to the heat slug. ... Infineon Technologies Ag

07/26/18 / #20180211821

Wafer chuck and processing arrangement

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.. . ... Infineon Technologies Ag

07/26/18 / #20180210852

Scalable multi-core system-on-chip architecture on multiple dice for high end microcontroller

A system for a multiple chip architecture that enables different system on-chip (soc) systems with varying compatibilities to interact as one soc via a transparent interface. The system address maps of the single socs are configured so that each provide a system address map of the two socs without overlap or address re-mapping when connected to one another via the transparent interface. ... Infineon Technologies Ag

07/26/18 / #20180210027

Semiconductor device testing

Methods and devices are provided. A device may comprise a main current path (11) between a terminal (10) and a supply voltage rail (15). ... Infineon Technologies Ag

07/26/18 / #20180209820

Sensor controller, sensor signal receiver, incremental magnetic speed sensor module, method for a sensor controller, method for a sensor signal receiver and computer program

A sensor controller for a sensor module includes at least one interface to obtain sensor information from the sensor module and to communicate with a sensor signal receiver. The sensor controller includes a control module to control the at least one interface. ... Infineon Technologies Ag

07/26/18 / #20180208461

Semiconductor element and methods for manufacturing the same

A semiconductor element includes a processed substrate arrangement including a processed semiconductor substrate and a metallization layer arrangement on a main surface of the processed semiconductor substrate. The semiconductor element further includes a passivation layer arranged at an outer border of the processed substrate arrangement.. ... Infineon Technologies Ag

07/26/18 / #20180208002

Tire pressure sensor modules, tire pressure monitoring system, wheel, methods and computer programs for providing information relating to a tire pressure

A first tire pressure sensor module is configured to provide information related to a pressure of a tire of a vehicle and comprises a pressure sensor configured to determine the information related to the pressure of the tire. The pressure module further includes a controller configured to selectively operate the tire pressure sensor module in an active state and in an inactive state, wherein an energy consumption of the tire pressure sensor module is lower in the inactive state than in the active state. ... Infineon Technologies Ag

07/19/18 / #20180205390

Gain calibration for adc with external reference

Representative implementations of devices and techniques provide gain calibration for analog to digital conversion of time-discrete analog inputs. An adjustable capacitance arrangement is used to reduce or eliminate gain error caused by capacitor mismatch within the adc. ... Infineon Technologies Ag

07/19/18 / #20180204808

Semiconductor device with circumferential structure and method of manufacturing

A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. ... Infineon Technologies Ag

07/19/18 / #20180204725

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. ... Infineon Technologies Ag

07/19/18 / #20180201511

Process for the formation of a graphene membrane component, graphene membrane component, microphone and hall-effect sensor

A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. ... Infineon Technologies Ag

07/19/18 / #20180201504

Mems device and method of manufacturing a mems device

A method for manufacturing a mems device is disclosed. Moreover a mems device and a module including a mems device are disclosed. ... Infineon Technologies Ag

07/12/18 / #20180198546

Synchronization mechanism for high speed sensor interface

A sensor may determine a sampling pattern based on a group of synchronization signals received by the sensor. The sampling pattern may identify an expected time for receiving an upcoming synchronization signal. ... Infineon Technologies Ag

07/12/18 / #20180198545

Synchronization mechanism for high speed sensor interface

A sensor may determine, based on two or more synchronization signals provided by a control device, an expected time for receiving an upcoming synchronization signal. The sensor may perform a measurement of a sensor signal at a point in time such that sensor data, corresponding to the measurement of the sensor signal at the point in time, is available at a selectable time interval prior to reception of the upcoming synchronization signal.. ... Infineon Technologies Ag

07/12/18 / #20180198460

Built-in self-test for adc

Representative implementations of devices and techniques provide a built-in self-test (bist) for an analog-to-digital converter (adc). Stimuli needed to test an adc are generated within the chip containing the adc. ... Infineon Technologies Ag

07/12/18 / #20180197982

Semiconductor device with a guard structure and corresponding methods of manufacture

A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. ... Infineon Technologies Ag

07/12/18 / #20180197948

Power semiconductor device with charge balance design

A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. ... Infineon Technologies Ag

07/12/18 / #20180197766

Wafer carrier, method for manufacturing the same and method for carrying a wafer

A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. ... Infineon Technologies Ag

07/12/18 / #20180196501

System and method of gesture detection for a remote device

A method for operating a mobile device includes detecting a gesture by the mobile device. Detecting the gesture includes receiving a reflected millimeter wave signal by the mobile device, generating a first message in accordance with the detected gesture, and transmitting the first message from the mobile device to an external remote device. ... Infineon Technologies Ag

07/12/18 / #20180196080

Stray-field robust, twist-insensitive magnetic speed sensors

A magnetic sensor module includes a magnetic sensor having an in-plane axis and an out-of-plane axis, and including a differential pair of sensor elements spaced apart from each other. The differential pair of sensor elements are configured to generate measurement values in response to sensing a bias magnetic field. ... Infineon Technologies Ag

07/05/18 / #20180191147

Electronic switch and protection circuit

Disclosed is an electronic circuit and a method. The electronic circuit includes a plurality of electronic switches each including a load path and a control node, wherein the load paths are connected in parallel between a first load node and a second load node of the electronic circuit; a current sense circuit configured to sense a load current between the first load node and the second load node and to generate a current sense signal representing the load current; a drive circuit configured to drive the plurality of electronic switches based on at least one input signal; and an overload detector. ... Infineon Technologies Ag

07/05/18 / #20180190651

Semiconductor device and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region, a first metallization on a front side of the semiconductor body, a contact region that forms an ohmic contact with the second silicon carbide region, and a barrier-layer between the first metallization and the contact region and that is in ohmic connection with the first metallization and the contact region. The barrier-layer forms a schottky-junction with the first silicon carbide region, and includes molybdenum nitride or tantalum nitride. ... Infineon Technologies Ag

07/05/18 / #20180190650

Method of operating an igbt having switchable and non-switchable diode cells

A method of operating an igbt is described. The igbt has gate, emitter and collector terminals, and igbt cells, switchable diode cells, and non-switchable diode cells integrated in a semiconductor substrate, wherein each of the igbt cells and switchable diode cells includes an operable switchable channel region. ... Infineon Technologies Ag

07/05/18 / #20180190649

Semiconductor device with an igbt region and a non-switchable diode region

A semiconductor device includes a semiconductor substrate having a body layer arranged between a front side and a drift layer, and forming a pn-junction with the drift layer. A front metallization is on the front side in ohmic connection with the body layer, and a back metallization opposite is in ohmic connection with the drift layer. ... Infineon Technologies Ag

07/05/18 / #20180190557

Semiconductor device including an encapsulation material defining notches

A semiconductor device includes a first contact element, a second contact element, a semiconductor chip, and an encapsulation material. The first contact element is on a first side of the semiconductor device. ... Infineon Technologies Ag

07/05/18 / #20180190530

Frame mounting after foil expansion

An apparatus which comprises an expansion unit configured for expanding a foil, and a mounting unit configured for subsequently mounting the expanded foil on a frame and a workpiece, in particular a wafer, on the expanded foil.. . ... Infineon Technologies Ag

07/05/18 / #20180188308

Passive bridge circuit with oxide windows as leakage sink

Leakage current detection systems and detection methods are provided. A leakage current detection system includes a passive bridge circuit including a first branch having a first output and a second branch having a second output, a first output pad electrically connected to the first output, a second output pad electrically connected to the second output, a leakage surge structure disposed between the first output pad and the second output pad, where the leakage surge structure is connected to a low-ohmic node and is configured to draw a leakage current from the passive bridge circuit and pull voltages at the first and the second output pads in a same direction on a condition that the leakage current flows through at least one element of the passive bridge circuit, and a processing device configured to monitor for the leakage current and output a monitored result.. ... Infineon Technologies Ag

07/05/18 / #20180188213

Photoacoustic gas analyzer

A photoacoustic gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit into the gas chamber electromagnetic radiation with a time-varying intensity adapted to selectively excite gas molecules of n mutually different gas types the concentrations of which are to be determined in the gas received in the gas chamber, thereby generating acoustic waves, an acoustic-wave sensor configured to detect acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, and a control unit operatively connected to the radiation source and the acoustic-wave sensor. The control unit may be configured: to control the radiation source to emit electromagnetic radiation with a time-varying intensity and to modulate the frequency at which the intensity is varied with a modulation signal taking on at least n mutually different values, to receive from the acoustic-wave sensor signals indicative of detected acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, to determine at least n mutually different signal amplitudes associated with respective n mutually different frequencies at which the intensity of the emitted electromagnetic radiation is varied, and to determine from the determined signal amplitudes the concentrations of the n mutually different gas types.. ... Infineon Technologies Ag

07/05/18 / #20180188172

Gas analysis apparatus

An analysis apparatus includes a gas chamber for receiving a gas to be analysed, a source to emit radiation into the chamber. The radiation is to selectively excite molecules of the gas. ... Infineon Technologies Ag

07/05/18 / #20180188071

Sensor with interface for functional safety

A sensor interface operates to communicate a sensed quantity along one or more processing pathways and in different data representations. The signal representations can be swapped along one or more locations of the signal processing branches. ... Infineon Technologies Ag

06/28/18 / #20180184538

Method for producing an electronic module assembly and electronic module assembly

One aspect relates to a method for producing an electronic module assembly. According to the method, a curable first mass extending between a substrate assembly and a module housing is cured while a circuit carrier of the substrate assembly has at least a first temperature. ... Infineon Technologies Ag

06/28/18 / #20180184495

Thermal protection for light emitting devices

A device for thermal protection is described. The device may be configured to determine current temperature information for a set of light emitting diodes (leds), receive an indication of a requested light pattern for the set of leds, and determine predicted temperature information for the set of leds based on the current temperature information and the requested light pattern. ... Infineon Technologies Ag

06/28/18 / #20180183421

Voltage comparator arrangement, electronic component, chip card, embedded secure element

In various embodiments, an electronic component is provided. The electronic component may include a supply bus configured to provide a supply voltage for an electronic circuit. ... Infineon Technologies Ag

06/28/18 / #20180183327

Charge pump arrangement and method for operating a charge pump arrangement

A charge pump arrangement and methods for operating a charge pump arrangement are disclosed. According to various embodiments, a charge pump arrangement may include: a charge pump circuit configured to convert an input voltage into an output voltage based on a pump clock signal; a feedback path configured to provide a feedback signal representing the output voltage of the charge pump circuit; and a control circuit configured to receive a clock signal and to control the output voltage of the charge pump circuit by controlling the pump clock signal based on the feedback signal and the clock signal.. ... Infineon Technologies Ag

06/28/18 / #20180182710

Semiconductor arrangement with a sealing structure

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. ... Infineon Technologies Ag

06/28/18 / #20180182651

Common procedure of interconnecting electronic chip with connector body and forming the connector body

A method which comprises applying a common pressing force operative to interconnect an electronic chip with a connector body by an interconnect structure, and to contribute to a forming of the connector body.. . ... Infineon Technologies Ag

06/28/18 / #20180182643

Semiconductor module cooling system

A cooling apparatus includes a discrete module and a plastic housing. The discrete module incudes a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound and a first cooling plate at least partly uncovered by the mold compound. ... Infineon Technologies Ag

06/28/18 / #20180180666

Integrated circuit device testing in an inert gas

A system includes an inert gas supply, a soak chamber, a test chamber, a transfer zone, and a heater. The soak chamber soaks an integrated circuit (ic) device in the inert gas prior to testing. ... Infineon Technologies Ag

06/28/18 / #20180180542

Photonic crystal sensor structure and a method for manufacturing the same

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.. ... Infineon Technologies Ag

06/21/18 / #20180177022

Pulse width modulated binary frequency shift keying

A control system that facilitates energy efficient management of building automation systems is disclosed. The control system comprises a source circuit configured to generate a modulated dc control signal comprising data modulated on a dc source signal having a power associated therewith and a load circuit configured to receive the modulated dc control signal. ... Infineon Technologies Ag

06/21/18 / #20180175947

Radio frequency device and corresponding method

According to an embodiment, a radio frequency device includes a phase locked loop circuit, and an automatic gain control circuit, where an output of an automatic gain control circuit is coupled to a reference signal input of the phase locked loop circuit.. . ... Infineon Technologies Ag

06/21/18 / #20180175909

Radio frequency device and corresponding method

Devices and methods determining phase offsets are disclosed. A first test signal is transmitted from a first rf circuit part to a second rf circuit part, where a phase difference between the first test signal and a reference signal (ref) is measured. ... Infineon Technologies Ag

06/21/18 / #20180175898

Rf transceiver with test capability

An rf front-end circuit of an rf transceiver is described herein. In accordance with one exemplary embodiment, the fronted circuit includes a local oscillator (lo) configured to generate an rf transmit signal, an rf output port coupled to the local oscillator, wherein the rf transmit signal is output at the rf output port, and a monitoring circuit receiving an input signal and configured to determine the phase of the input signal or the power of the input signal or both. ... Infineon Technologies Ag

06/21/18 / #20180175868

Generation of fast frequency ramps

A circuit includes an rf oscillator coupled in a phase-locked loop. The phase-locked loop is configured to receive a digital input signal, which is a sequence of digital words, and to generate a feedback signal for the rf oscillator based on the digital input signal. ... Infineon Technologies Ag

06/21/18 / #20180175855

Switch device and method

Devices and methods related to switches are discussed. An inverse current condition may be detected, and a voltage at a node associated with a switch driver may be driven to a predetermined voltage in case of detection of an inverse current condition.. ... Infineon Technologies Ag

06/21/18 / #20180175811

Compact class-f chip and wire matching topology

An amplifier circuit includes an rf input port, an rf output port, a reference potential port, and an rf amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the rf output port. ... Infineon Technologies Ag

06/21/18 / #20180175153

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. ... Infineon Technologies Ag

06/21/18 / #20180175150

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. ... Infineon Technologies Ag

06/21/18 / #20180174985

Semiconductor chip

According to one embodiment, a semiconductor chip is described including a semiconductor chip body and a semiconductor chip circuit on the body and including a first circuit path coupled to a first and a second node and including at least two gate-insulator-semiconductor structures and a second circuit path coupled to the first and the second node and including at least two gate-insulator-semiconductor structures. The first and the second circuit path are connected to set the first and the second node to complementary logic states. ... Infineon Technologies Ag

06/21/18 / #20180174946

Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers

Power semiconductor packages described herein each include a substrate having two or more metal layers and one or more insulating layers for separating the metal layers. The substrate insulating layers are formed from a polymer material to reduce the cte mismatch between the substrate metal layers and the substrate insulating layers.. ... Infineon Technologies Ag

06/21/18 / #20180174936

Power semiconductor modules with protective coating

A semiconductor package is described which meets a plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. The semiconductor package includes a semiconductor die embedded in or covered by a molded plastic body, the molded plastic body satisfying only a subset of the plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. ... Infineon Technologies Ag

06/21/18 / #20180174935

Semiconductor package and method for fabricating a semiconductor package

A method of fabricating a semiconductor package comprises providing a carrier, fabricating an opening in the carrier, attaching a semiconductor chip to the carrier and fabricating an encapsulation body covering the semiconductor chip.. . ... Infineon Technologies Ag

06/21/18 / #20180174840

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. ... Infineon Technologies Ag

06/21/18 / #20180174640

Memory device and methods for controlling a memory assist function

According to one embodiment, a memory device is described including a memory array including a plurality of memory cells wherein each memory cell is coupled to a control line, a memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line, a signal generator configured to generate a signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device, a signal processing circuit configured to amplify the signal and a controller configured to activate the memory assist circuit based the amplified signal.. . ... Infineon Technologies Ag

06/21/18 / #20180174441

Apparatuses for encoding and decoding wheel speed sensor signals and methods for communicating encoded wheel speed sensor signals

A signal encoder for encoding a wheel speed sensor signal includes an input interface. The input interface is configured to receive a wheel speed sensor signal providing speed information and additional information. ... Infineon Technologies Ag

06/21/18 / #20180172801

Rf receiver with built-in test capabilities

A radar device comprises a test signal generator including a digital harmonic oscillator that generates a digital oscillator signal with a first spectral component; a first digital-to-analog-converter that generates an analog oscillator signal based on the digital oscillator signal. Furthermore, the radar device comprises at least one radar channel receiving the analog oscillator signal during one or more self-tests.. ... Infineon Technologies Ag

06/21/18 / #20180172739

Current sensing

Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.. ... Infineon Technologies Ag

06/21/18 / #20180172724

Acceleration sensor

Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (beol). ... Infineon Technologies Ag

06/21/18 / #20180172484

Sensor controller, sensor signal receiver and sensor system

A sensor controller for a sensor module includes at least one interface configured to obtain sensor information from the sensor module and to transmit a sensor signal to a sensor signal receiver. The sensor controller further includes a control module configured to control the interface. ... Infineon Technologies Ag

06/21/18 / #20180172474

Magnetic angle sensor device and method of operation

A magnetic angle sensing system is suggested comprising a first magnetic sensing device, a second magnetic sensing device, a third magnetic sensing device, a substrate comprising the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device, wherein the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device are each arranged such to be responsive to a magnetic field component that is perpendicular to a main surface of the substrate, wherein each or the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device comprises the same number of magnetic sensing elements, wherein the second magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device clockwise around a reference point, wherein the third magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device counter-clockwise around the reference point.. . ... Infineon Technologies Ag

06/21/18 / #20180170745

Semiconductor device, microphone and method for producing a semiconductor device

A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. ... Infineon Technologies Ag

06/14/18 / #20180167000

Rectifier device

A rectifier device is described herein. In accordance with one example, the rectifier device includes a transistor that has a load current path and a diode connected parallel to the load current path. ... Infineon Technologies Ag

06/14/18 / #20180166999

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166971

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166555

Silicon carbide vertical mosfet with polycrystalline silicon channel layer

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region. ... Infineon Technologies Ag

06/14/18 / #20180166338

Bimos device with a fully self-aligned emitter-silicon and method for manufacturing the same

A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. ... Infineon Technologies Ag

06/14/18 / #20180166324

Buried insulator regions and methods of formation thereof

A method of fabricating a semiconductor device includes forming a buried insulation region within a substrate by processing the substrate using etching and deposition processes. A semiconductor layer is formed over the buried insulation region at a first side of the substrate. ... Infineon Technologies Ag

06/14/18 / #20180164387

Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits

A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. ... Infineon Technologies Ag

06/14/18 / #20180164215

Gas analyzer

A gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit electromagnetic radiation into the gas chamber, the electromagnetic radiation being adapted to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber, a collimator configured to collimate the electromagnetic radiation emitted by the radiation source, and a sensor configured to detect a physical quantity indicative of a degree of interaction between the electromagnetic radiation emitted by the radiation source and the gas to be analyzed.. . ... Infineon Technologies Ag

06/14/18 / #20180164131

Calibration of an angle sensor without a need for regular rotation

A device may obtain raw sensor data, collected by a sensing device, including a set of signal values and a set of temperature values corresponding to the set of signal values. The set of signal values may correspond to a magnetic field present at the sensing device. ... Infineon Technologies Ag

06/14/18 / #20180162183

Single axis earth magnetic field sensor for motion detection in tpms application

A sensor module is provided that includes a magnetic sensor and a microcontroller. The magnetic sensor is configured to measure a magnitude of a magnetic field component of an earth magnetic field projected on a sensing axis of the magnetic sensor and is configured to generate a measurement signal. ... Infineon Technologies Ag

06/07/18 / #20180159562

System and method for a radio frequency filter

In accordance with an embodiment, a circuit includes a plurality of filter circuits having a first port, a second port and a third port, where a second port of a first of the plurality of filter circuits is coupled to a first port of a second of the plurality of filter circuits, and each of the plurality of filter circuits includes a first passive filter, a second passive filter, a first coupler and a combining network. The first coupler includes an input port coupled to the first port, an isolated port coupled to the second port, a first phase shifted port coupled to the first passive filter and a second phase shifted port coupled to the second passive filter, and the combining network includes a first input coupled to the first passive filter, a second input coupled to the second passive filter, and an output coupled to the third port.. ... Infineon Technologies Ag

06/07/18 / #20180159219

Device system and method for radio frequency signal path calibration

Devices, methods and systems are disclosed relating to rf signals. A device may comprise a clock input terminal, a variable delay circuit coupled to the clock input terminal and a test terminal as well as a reference signal generator coupled to the variable delay circuit.. ... Infineon Technologies Ag

06/07/18 / #20180158941

Semiconductor device

In an embodiment, a semiconductor device includes a substrate, a group iii nitride based transistor arranged on a front surface of the substrate, and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the substrate, and conductive material extending from the front surface to the rear surface of the substrate. ... Infineon Technologies Ag

06/07/18 / #20180158937

Bipolar transistor with superjunction structure

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. ... Infineon Technologies Ag

06/07/18 / #20180158920

Semiconductor device with diode region and trench gate structure

A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 ev, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. ... Infineon Technologies Ag

06/07/18 / #20180158916

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. ... Infineon Technologies Ag

06/07/18 / #20180158759

Chip package and a wafer level package

Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.. . ... Infineon Technologies Ag

06/07/18 / #20180158534

Memory circuit and method of operating a memory circuit

In various embodiments, a memory circuit is provided. The memory circuit may include a plurality of electrically programmable memory cells arranged in an electrically programmable non-volatile memory cell array along a plurality of rows and a plurality of columns, a plurality of word lines, each word line coupled with a plurality of word portions of the plurality of memory cells, wherein each word portion is configured to store a data word, and at least one overlay word line coupled with a plurality of overlay portions, each overlay portion comprising a plurality of overlay memory cells, wherein each of the plurality of overlay portions comprises an overlay word, wherein the memory circuit is configured to read, for each of the plurality of word lines, from each of the word portions simultaneously with an overlay portion of the plurality of overlay portions, thereby providing, as an output of the read operation, a result of a logic operation performed on the data word and the overlay word.. ... Infineon Technologies Ag

06/07/18 / #20180156706

Apparatus for analysing the particulate matter content of an aerosol

An apparatus for analysing the particulate matter content of an aerosol includes an aerosol chamber configured to receive an aerosol, the particulate matter content of which should be analysed, at least one ultrasonic generator configured to produce ultrasonic waves in the aerosol received in the aerosol chamber, an ultrasonic detector configured to detect ultrasonic waves produced by the at least one ultrasonic generator in the aerosol, and an evaluator having a data exchange communication link with the ultrasonic detector and configured to ascertain the matter content on the basis of signals output by the ultrasonic detector. The ultrasonic generator and the ultrasonic detector are positioned relative to one another such that a path length to be traversed by ultrasonic waves between the ultrasonic generator and the ultrasonic detector is less than 1 cm.. ... Infineon Technologies Ag

05/31/18 / #20180153013

Modulated quasi-resonant peak-current-mode control

Driver circuitry is configured to generate a control signal for a switching device that controls supply of load current to a load. The driver circuitry includes current control circuitry, modulation circuitry, and signal generation circuitry. ... Infineon Technologies Ag

05/31/18 / #20180151765

Controlling of photo-generated charge carriers

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region. ... Infineon Technologies Ag








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