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Infineon Technologies Ag patents (2014 archive)


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


12/25/14 / #20140379202

Sensor interface transceiver

Some embodiments of the present disclosure relate to a sensor interface module that selectively varies the resistance of an rlc network based upon one or more properties of exchanges data signals between one or more sensors and a controller (e.g., an ecu). The disclosed sensor interface module has a closed control loop that receives modulated sensor current signals from one or more sensors and that regulates a modulated output voltage that is provided to the one or more sensors. ... Infineon Technologies Ag

12/25/14 / #20140377915

Pre-mold for a magnet semiconductor assembly group and method of producing the same

A method of manufacturing pre-molds for a magnet semiconductor assembly group is provided, wherein the method comprises forming a plurality of permanent magnetizable elements on a carrier structure in a sensor-free area of the carrier structure by applying a permanent magnetizable molding material on the carrier structure.. . ... Infineon Technologies Ag

12/25/14 / #20140376292

Floating bias generator

In various embodiments a circuit is provided which may include a node at which a circuit potential may be provided; an alternating voltage providing circuit configured to provide a dc current free alternating voltage; a rectifier coupled to the alternating voltage providing circuit, the rectifier including a first rectifier terminal and a second rectifier terminal, wherein the first rectifier terminal or the second rectifier terminal may be coupled to the node; and a first output terminal and a second output terminal, wherein the first output terminal may be coupled to the first rectifier terminal to provide a first potential and wherein the second output terminal may be coupled to the second rectifier terminal to provide a second potential different from the first potential, the difference between the first potential and the second potential defining an output voltage, wherein the output voltage may be constant independent of the circuit potential.. . ... Infineon Technologies Ag

12/25/14 / #20140375514

Antenna tuning circuit, method for tuning an antenna, antenna arrangement and method for operating the same

An antenna tuning circuit is provided. The antenna tuning circuit includes an antenna, an inductor and a variable capacitance. ... Infineon Technologies Ag

12/25/14 / #20140375491

Method, device and system for processing radar signals

An embodiment relates to a method for processing radar signals. The radar signals may include digitized data received by at least two radar antennas. ... Infineon Technologies Ag

12/25/14 / #20140374913

Circuit arrangement and method for manufacturing the same

Various embodiments may provide a circuit arrangement. The circuit arrangement may include a carrier having at least one electrically conductive line; a plurality of discrete encapsulated integrated circuits arranged on the carrier; wherein a first integrated circuit of the plurality of integrated circuits is in electrical contact with a second integrated circuit of the plurality of integrated circuits to form a first current path bypassing the carrier; and wherein the first integrated circuit of the plurality of integrated circuits is in electrical contact with the second integrated circuit of the plurality of integrated circuits to form a second current path via the at least one electrically conductive line.. ... Infineon Technologies Ag

12/25/14 / #20140374906

Method for processing a carrier and an electronic component

In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.. ... Infineon Technologies Ag

12/25/14 / #20140374023

Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning

In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. ... Infineon Technologies Ag

12/18/14 / #20140372814

Method for testing a memory and memory system

A method for testing a memory includes performing an error correction code check (ecc check) on user data stored in the memory, inverting the user data stored in the memory, performing a further ecc check on the inverted user data stored in the memory, and inverting the inverted user data stored in the memory for restoring the user data in the memory.. . ... Infineon Technologies Ag

12/18/14 / #20140372056

Method and device for determining a parameter of a model of a technical installation

Methods and devices for determining at least one parameter of a model of a technical installation are provided. In this case, the parameters are updated on the basis of measurements as a function of an observation matrix. ... Infineon Technologies Ag

12/18/14 / #20140372006

Indirect tire pressure monitoring systems and methods using multidimensional resonance frequency analysis

Embodiments relate to an indirect tire pressure monitoring systems (tpms) and methods that utilize anti-lock braking system (abs) sensed signals coupled to circuitry and/or controllers to process the sensed signals using a multidimensional resonance frequency analysis (mrfa) technique. In some embodiments, additional information from other sensed signals or stored data settings for non-tire variables and parameters can be incorporated into the mrfa. ... Infineon Technologies Ag

12/18/14 / #20140370693

Method for manufacturing a semiconductor device having a channel region in a trench

A method of manufacturing a semiconductor device includes forming a semiconductor diode by forming a drift region, forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body, etching a trench into the semiconductor body, and forming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body. A first side of the channel region adjoins the first semiconductor region.. ... Infineon Technologies Ag

12/18/14 / #20140370663

Method for producing a semiconductor module

A semiconductor module is produced by providing a circuit carrier having a metallization, an electrically conductive wire and a bonding device. With the aid of the bonding device, a bonding connection is produced between the metallization and a first section of the wire. ... Infineon Technologies Ag

12/18/14 / #20140369433

Circuit arrangement and method for bidirectional data transmission

A transformer arrangement for signal transmission is provided, the transformer arrangement having at least one transformer with a primary coil and a secondary coil and a controller. The controller is configured in a magnetization phase to control a first current to flow through the primary coil to increase until a predefined criterion is fulfilled, wherein the magnetization phase is longer than a time constant of the primary coil of the at least one transformer. ... Infineon Technologies Ag

12/18/14 / #20140369380

Sensors, systems and methods for compensating for thermal emf

Embodiments relate to sensor systems and methods that can compensate for thermal emf effects that can cause residual offset and other errors in sensor systems. In one embodiment, a sensor system comprises at least one temperature sensor arranged proximate a primary sensor element, e.g., a hall plate in an embodiment in which the sensor system comprises a hall-effect magnetic field sensing system, though other types of magnetic field and sensors more generally can be used in other embodiments. ... Infineon Technologies Ag

12/18/14 / #20140368514

Device, method and system for processing an image data stream

An implementation relates to a device for processing an image data stream. The device may include a first processing unit and a second processing unit for receiving the image data stream. ... Infineon Technologies Ag

12/18/14 / #20140368327

Rfid-tag, a tpms device, a tire, a receiver device and a method for providing information related to identification of a tire

Embodiments relate to a radio frequency identification (rfid)-tag, a tire pressure monitoring system (tpms) device, a tire, a receiver device and a method for providing information related to identification of a tire. The rfid-tag is configured to provide information related to the tire identification and it is configured to be powered by the tpms device. ... Infineon Technologies Ag

12/18/14 / #20140368267

Chopped circuit with ac and dc ripple error feedback loops

The present disclosure relate to a sensor system having a low offset error. In some embodiments, the sensor system comprises a sensor configured to generate a sensor signal, which is provided to a main signal path having a first chopping correction circuit and a second chopping correction circuit. ... Infineon Technologies Ag

12/18/14 / #20140368258

Sensing element for semiconductor

An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.. ... Infineon Technologies Ag

12/18/14 / #20140368231

Power semiconductor module comprising a power electronics circuit and an arrangement for measuring and transferring measurement data

A power semiconductor module includes a power electronics circuit and a measuring circuit for measuring a physical parameter occurring in the power electronics circuit and for providing a corresponding measurement signal. A transmission circuit is coupled to a secondary side of a transfer unit, and an evaluation circuit is coupled to the primary side and galvanically isolated from the transmission circuit by the transfer unit. ... Infineon Technologies Ag

12/18/14 / #20140368037

Circuit arrangement and method for controlling the operation of a plurality of components requiring a supply in a circuit arrangement

According to various embodiments, a circuit arrangement is described that has a plurality of components requiring a supply. Each component requiring a supply is set up to output a signal that indicates a subsequent power requirement of the component requiring a supply. ... Infineon Technologies Ag

12/18/14 / #20140367015

Method and apparatus for separating semiconductor devices from a wafer

An embodiment method for separating semiconductor devices from a wafer comprises using a carrier which acts an adjustable adhesive force upon the semiconductor devices and removing the semiconductor devices from the carrier by applying a mechanical or acoustical impulse to the carrier.. . ... Infineon Technologies Ag








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