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Infineon Technologies Ag patents (2016 archive)


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Alternator control with temperature-dependent safety feature

A method for controlling an alternator includes determining a temperature-dependent value associated with a battery coupled to an alternator and determining an excitation emergency threshold for the alternator based on the determined temperature-dependent value associated with the battery. The method further includes initiating, by a controller of an alternator, at least one safety measure upon a determination that a voltage associated with the battery exceeds the determined excitation emergency threshold.. ... Infineon Technologies Ag

System and method for starting a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power supply (smps) includes starting up the switched-mode power supply by determining a rate of increase of a duty cycle of a pulse width modulated (pwm) signal based on an input voltage and a switching frequency of the smps; and generating the pwm signal having the duty cycle in accordance with determined rate of increase.. . ... Infineon Technologies Ag

Semiconductor package with integrated magnetic field sensor

A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as the semiconductor die and positioned in close proximity to a current pathway of the semiconductor die so that the magnetic field sensor can sense a magnetic field produced by current flowing in the current pathway. The magnetic field sensor includes a first magnetic field sensing component galvanically isolated from the current pathway and positioned so that a magnetic field produced by current flowing in the current pathway impinges on the first magnetic field sensing component in a first direction. ... Infineon Technologies Ag

Method for producing a semiconductor component with insulated semiconductor mesas in a semiconductor body

A method for producing a semiconductor component is provided. The method includes providing a semiconductor body with a first surface and a second surface opposite to the first surface, etching an insulation trench from the first surface partially into the semiconductor body, forming a first insulation layer on one or more sidewalls of the insulation trench, processing the second surface by at least one of grinding, polishing and a cmp-process to expose the first insulation layer, and depositing on the processed second surface a second insulation layer which extends to the first insulation layer.. ... Infineon Technologies Ag

Power package with integrated magnetic field sensor

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.. ... Infineon Technologies Ag

Semiconductor device with metal structure electrically connected to a conductive structure

A semiconductor device includes a semiconductor die that having a conductive structure. A metal structure is electrically connected to the conductive structure and contains a first metal. ... Infineon Technologies Ag

Semiconductor device and method of manufacture thereof

A semiconductor device and a method of making a semiconductor device are disclosed. The semiconductor device comprises a redistribution layer arranged over a chip, the redistribution layer comprising a first redistribution line. ... Infineon Technologies Ag

Method of dicing a wafer

A method of dicing a wafer includes providing a wafer and etching the wafer to singulate die between kerf line segments defined within an interior region of the wafer and to singulate a plurality of wafer edge areas between the kerf line segments and a circumferential edge of the wafer. Each one of the plurality of wafer edge areas is singulated by kerf lines that each extend between one of two endpoints of one of the kerf line segments and the circumferential edge of the wafer.. ... Infineon Technologies Ag

Method for fabricating a semiconductor chip panel

A method for fabricating a semiconductor chip is disclosed. In an embodiment, the method includes providing a carrier, providing a plurality of semiconductor chips, the semiconductor chips each including a first main face and a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on the carrier with the second main faces facing the carrier, and applying an encapsulation material to the side faces of the semiconductor chips.. ... Infineon Technologies Ag

Multi-functional interconnect module and carrier with multi-functional interconnect module attached thereto

An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. ... Infineon Technologies Ag

Chip and method for testing a processing component of a chip

In accordance with one embodiment, a chip is provided which includes an interface configured to receive test data and masking data, a processing component having a plurality of scan chains. Each scan chain is configured to generate a test response on the basis of a processing of the test data. ... Infineon Technologies Ag

System and method for a mems transducer

According to an embodiment, a microelectromechanical systems (mems) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The mems transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. ... Infineon Technologies Ag

Devices and methods for adaptive crest factor reduction in dynamic predistortion

A non-linear pre-distortion engine maintaining constant peak power at its output is disclosed. The engine includes a compression estimator, a crest factor reduction processor, a digital pre-distorter and a power amplifier. ... Infineon Technologies Ag

Alternator with current measurement

An alternator is described that is configured to provide a current for powering one or more loads. The alternator includes an output port configured to output the current for powering the one or more loads, and one or more current sensors configured to measure a current level of at least a portion of the current being output via the output port to the one or more loads, the alternator further includes one or more communication ports configured to transmit information based on the current level measured by the one or more current sensors.. ... Infineon Technologies Ag

12/22/16 / #20160372539

Semiconductor to metal transition for semiconductor devices

A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. ... Infineon Technologies Ag

12/22/16 / #20160372399

Electrically insulating thermal interface on the discontinuity of an encapsulation structure

Method for manufacturing an electronic semiconductor package, in which method an electronic chip (100) is coupled to a carrier, the electronic chip is at least partially encapsulated by means of an encapsulation structure having a discontinuity, and the carrier is partially encapsulated, and at least one part of the discontinuity and a volume connected thereto adjoining an exposed surface section of the carrier are covered by an electrically insulating thermal interface structure, which electrically decouples at least one part of the carrier with respect to its surroundings.. . ... Infineon Technologies Ag

12/22/16 / #20160372393

Laminar structure, a semiconductor device and methods for forming semiconductor devices

A method for forming semiconductor devices includes placing a laminar structure having electrically insulating material arranged between a plurality of electrically conductive structures onto a surface of a semiconductor wafer comprising a plurality of semiconductor device structures. An electrically conductive structure of the plurality of electrically conductive structures is located adjacent to a semiconductor device structure of the plurality of semiconductor device structures. ... Infineon Technologies Ag

12/22/16 / #20160372374

Method of electrically isolating leads of a lead frame strip by laser beam cutting

A lead frame strip includes a plurality of connected unit lead frames, each unit lead frame having a die paddle and a plurality of leads connected to a periphery of the unit lead frame. A semiconductor die is attached to each of the die paddles, the unit lead frames are covered with a molding compound after the semiconductor dies are attached to the die paddles, and a laser beam is directed at regions of the periphery of each unit lead frame where the leads are located thereby forming spaced apart cuts in the periphery of each unit lead frame. ... Infineon Technologies Ag

12/22/16 / #20160372329

Methods for forming a semiconductor device and a semiconductor device

A method for forming a semiconductor device includes implanting a predefined dose of protons into a semiconductor substrate. Further, the method comprises controlling a temperature of the semiconductor substrate during the implantation of the predefined dose of protons so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the predefined dose of protons. ... Infineon Technologies Ag

12/22/16 / #20160372256

System and method for integrated inductor

In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.. . ... Infineon Technologies Ag

12/15/16 / #20160365969

Electronic circuit and method for transferring data between clock domains

According to one embodiment, an electronic circuit is described comprising a first clock domain configured to operate according to a first clock signal, a second clock domain configured to operate according to a second clock signal different from the first clock signal, an encoding circuit, in the first clock domain, configured to encode data to be transmitted from the first clock domain to the second clock domain into codewords and configured to supply the codewords to an interface between the first clock domain and the second clock domain and a reception circuit, in the second clock domain, configured to receive data words from the interface, to decode valid codewords and to discard invalid codewords.. . ... Infineon Technologies Ag

12/15/16 / #20160365880

Devices and methods for adaptive crest factor reduction in dynamic predistortion

A non-linear pre-distortion engine maintaining constant peak power at its output is disclosed. The engine includes a compression estimator, a crest factor reduction processor, a digital pre-distorter and a power amplifier. ... Infineon Technologies Ag

12/15/16 / #20160365847

Pulse-density modulated fast current controller

Methods, devices, techniques, and circuits are disclosed for fast current control of a buck converter. In one example, a device includes a pulse density modulator, an analog comparator, and an interconnect circuit. ... Infineon Technologies Ag

12/15/16 / #20160365813

Safety circuit and brush holder for preventing fault conditions in an alternator

A fault protection circuit for an alternator is provided for preventing faults such as a prolonged full-field condition in the alternator. The fault protection circuit includes a safety switch that is opened when the alternator output voltage becomes too high, as may occur during a full-field condition caused by an electrical short, or when some other fault is detected within the alternator. ... Infineon Technologies Ag

12/15/16 / #20160365789

Charge injection circuit for instantaneous transient support

A voltage regulator circuit includes a voltage regulator electrically coupled to a load through an output inductor and operable to regulate a voltage applied to the load, an output capacitor electrically coupled to a node between the inductor and the load, and a charge injection circuit capacitively coupled to the node. The output capacitor is configured to discharge energy stored in the capacitor to the load during step-up transient events at the load and absorb energy from the load during step-down transient events at the load. ... Infineon Technologies Ag

12/15/16 / #20160365443

Transistor with improved avalanche breakdown behavior

A transistor cell includes a drift region, a source region, a body region, and a drain region that is laterally spaced apart from the source region. A gate electrode is adjacent the body region. ... Infineon Technologies Ag

12/15/16 / #20160365441

Transistor with field electrodes and improved avalanche breakdown behavior

A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. ... Infineon Technologies Ag

12/15/16 / #20160365413

Semiconductor device with reduced emitter efficiency

A method of producing a semiconductor device includes providing a semiconductor body having a front side 10-1 and a back side, wherein the semiconductor body includes a drift region having dopants of a first conductivity type and a body region having dopants of a second conductivity type complementary to the first conductivity type, a transition between the drift region and the body region forming a pn-junction. The method further comprises: creating a contact groove in the semiconductor body, the contact groove extending into the body region along a vertical direction pointing from the front side to the back side; and filling the contact groove at least partially by epitaxially growing a semiconductor material within the contact groove, wherein the semiconductor material has dopants of the second conductivity type.. ... Infineon Technologies Ag

12/15/16 / #20160365333

Semiconductor module, semiconductor module arrangement and method for operating a semiconductor module

A semiconductor module includes a first semiconductor switch, a second semiconductor switch, a circuit carrier arrangement and a non-ceramic dielectric isolation layer. The first semiconductor switch and the second semiconductor switch have a first load terminal and a second load termina. ... Infineon Technologies Ag

12/15/16 / #20160365296

Electronic devices with increased creepage distances

A device includes an encapsulation material and a first lead and a second lead protruding out of a surface of the encapsulation material. A recess extends into the surface of the encapsulation material. ... Infineon Technologies Ag

12/15/16 / #20160365295

Semiconductor arrangement, semiconductor system and method of forming a semiconductor arrangement

A semiconductor arrangement is provided. The semiconductor arrangement may include an electrically conductive plate having a surface, a plurality of power semiconductor devices arranged on the surface of the electrically conductive plate, wherein a first controlled terminal of each power semiconductor device of the plurality of power semiconductor devices may be electrically coupled to the electrically conductive plate, a plurality of electrically conductive blocks, wherein each electrically conductive block may be electrically coupled with a respective second controlled terminal of each power semiconductor device of the plurality of power semiconductor devices; and encapsulation material encapsulating the plurality of power semiconductor devices, wherein at least one edge region of the surface of the electrically conductive plate may be free from the encapsulation material.. ... Infineon Technologies Ag

12/15/16 / #20160365258

Semiconductor device including structure to control underfill material flow

A semiconductor device includes a substrate, a semiconductor chip, and an array of contact elements electrically coupling the substrate to the semiconductor chip. The semiconductor device includes an underfill material between the substrate and the semiconductor chip and between the contact elements. ... Infineon Technologies Ag

12/15/16 / #20160365213

Detection of dependent failures

Devices and methods are provided which facilitate detecting of a disturbance parameter being outside a predetermined range. Such disturbance parameter may for example cause dependent failures in redundant circuits, for example redundant circuits being arranged on a same substrate.. ... Infineon Technologies Ag

12/15/16 / #20160364280

Circuitry and method for testing an error-correction capability

A circuitry for error-correcting data and for checking a correctness of an error-correction capability of an error-correction component of the circuitry is provided. The circuitry includes an input interface for receiving an input data word. ... Infineon Technologies Ag

12/15/16 / #20160363615

Current measurement

A method for measuring a load current flowing through a switch is proposed, in which a defined offset current is applied to a measurement current, in which the defined offset current is determined during at least two intervals of time during which the switch is switched on, in which the load current is determined on the basis of the defined offset current using the measurement current. A corresponding circuit is also stated.. ... Infineon Technologies Ag

12/08/16 / #20160359504

Multiple input and multiple output switch networks

According to an embodiment, a circuit package includes a programmable switch component having a plurality of input terminals arranged on the programmable switch component, a plurality of output terminals arranged on the programmable switch component and configured to be coupled to a plurality of amplifiers, and a plurality of switches. Each switch of the plurality of switches is coupled between an input terminal of the plurality of input terminals and an output terminal of the plurality of output terminals. ... Infineon Technologies Ag

12/08/16 / #20160359442

Optimized control for synchronous motors

Representative implementations of devices and techniques provide optimized control of a three-phase ac motor. A field oriented control (foc) arrangement uses optimization components and techniques to improve power efficiency of the motor, with fast control response over a full range of motor speeds.. ... Infineon Technologies Ag

12/08/16 / #20160359014

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers is provided. The method includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. ... Infineon Technologies Ag

12/08/16 / #20160358999

Capacitors in integrated circuits and methods of fabrication thereof

A capacitor includes a first via level having first metal bars and first vias, such that the first metal bars are coupled to a first potential node. The first metal bars are longer than the first vias. ... Infineon Technologies Ag

12/08/16 / #20160358890

Diffusion solder bonding using solder preforms

A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.. ... Infineon Technologies Ag

12/08/16 / #20160358886

Arrangement of multiple power semiconductor chips and method of manufacturing the same

A semiconductor power arrangement includes a chip carrier having a first surface and a second surface opposite the first surface. The semiconductor power arrangement further includes a plurality of power semiconductor chips attached to the chip carrier, wherein the power semiconductor chips are inclined to the first and/or second surface of the chip carrier.. ... Infineon Technologies Ag

12/08/16 / #20160358843

Semiconductor device including a clip

A semiconductor device includes a lead frame including a die paddle and a lead, a semiconductor chip, and a clip. The semiconductor chip has a first side and a second side opposite to the first side. ... Infineon Technologies Ag

12/08/16 / #20160356864

Xmr angle sensors

Embodiments relate to xmr sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xmr structure; and a plurality of contact regions formed on the xmr structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xmr structure when a voltage is applied between the plurality of contact regions.. ... Infineon Technologies Ag

12/08/16 / #20160356844

Probe-pad qualification

A method in accordance with various embodiments may include: measuring a contact force between at least one probe and at least one contact pad for a plurality of probe overdrive positions, and determining a relationship between contact force and probe overdrive position from the measured contact forces; determining a first region in the relationship exhibiting a non-linear dependence of the contact force from the probe overdrive position, and a second region exhibiting a linear dependence of the contact force from the probe overdrive position; and determining a process window for a pad probing process based on the determined first region and second region.. . ... Infineon Technologies Ag

12/08/16 / #20160356839

Method for testing semiconductor dies

A method for testing semiconductor dies includes: providing a test apparatus; providing an electrically conductive carrier; providing a semiconductor substrate having a first main face, a second main face opposite to the first main face, and a plurality of semiconductor dies, the semiconductor dies including a first contact element on the first main face and a second contact element on the second main face; placing the semiconductor substrate on the carrier with the second main face facing the carrier; electrically connecting the carrier to a contact location disposed on the first main face; and testing a first semiconductor die of the plurality of semiconductor dies by electrically connecting the test apparatus with the first contact element of the first semiconductor die and the contact location.. . ... Infineon Technologies Ag

12/08/16 / #20160356821

Current sensors

Embodiments relate to magnetic field current sensors having sensor elements for sensing at least two magnetic field components, for example bx and by. The current in a conductor is estimated by bx and bx/by, wherein bx is the primary measurement and bx/by is a corrective term used to account for position tolerances between the sensor and the conductor. ... Infineon Technologies Ag

12/08/16 / #20160356820

Current sensor chip with magnetic field sensor

A current sensor chip and systems and methods for calibrating thereof are provided. The current sensor chip includes a first magnetic field sensor element configured to generate a first analog sensor signal representing a magnetic field caused by a primary current passing through an external primary conductor, an analog-to-digital converter coupled to the first magnetic field sensor element and configured to generate a digital sensor signal based on the first analog sensor signal, a digital signal processor coupled to the analog-to-digital converter to receive the digital sensor signal and configured to determine, based on the digital sensor signal and based on calibration parameters stored in memory, a corresponding current measurement signal that represents the primary current, and an external output pin coupled to the first magnetic field sensor element to receive the first analog sensor signal or an analog signal derived therefrom by analog signal processing.. ... Infineon Technologies Ag

12/08/16 / #20160356814

Modular measuring device using interface members for testing devices under test

A measuring device for accommodating and electrically contacting a device under test to be tested in cooperation with a test apparatus, the measuring device comprising a casing comprising a first interface member being electrically couplable to the test apparatus when the test apparatus is connected to a test plug of the casing, and an exchangeable connector configured to be exchangeably assembled with the casing and comprising a second interface member being electrically couplable to a device under test when located at a device under test receptacle of the connector, wherein the first interface member and the second interface member are configured for establishing an electrically conductive connection from the device under test receptacle to the test plug upon assembling the connector with the casing.. . ... Infineon Technologies Ag

12/01/16 / #20160353210

Micromechanical structure and method for fabricating the same

A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. ... Infineon Technologies Ag

12/01/16 / #20160352326

Controlling reverse conducting igbt

A method for controlling a first switch and a second switch is suggested, wherein each switch is an rc-igbt and wherein both switches are arranged as a half-bridge circuit. The method includes: controlling the first switch in an igbt-mode; controlling the second switch such that it becomes desaturated when being in a diode-mode; wherein controlling the second switch starts before and lasts at least as long as the first switch changes its igbt-mode from blocking state to conducting state.. ... Infineon Technologies Ag

12/01/16 / #20160351800

Method for manufacturing the magnetic field sensor module

In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.. ... Infineon Technologies Ag

12/01/16 / #20160351739

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. ... Infineon Technologies Ag

12/01/16 / #20160351668

Stripe-shaped electrode structure including a main portion with a field electrode and an end portion terminating the electrode structure

A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure includes a main portion and an end portion terminating the electrode structure. ... Infineon Technologies Ag

12/01/16 / #20160351533

Method for producing an integral join and automatic placement machine

A powder carrier, to which a powder layer containing a metal powder is applied, is provided by an automatic powder carrier feed. A first joining partner is pressed onto the powder layer located on the powder carrier so as to bond a powder layer portion to the first joining partner. ... Infineon Technologies Ag

12/01/16 / #20160351516

Solder metallization stack and methods of formation thereof

A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.. . ... Infineon Technologies Ag

12/01/16 / #20160351475

Semiconductor device including lead frames with downset

A semiconductor device includes a planar first lead frame including a die pad, a semiconductor chip coupled to the die pad, and a second lead frame coupled to the first lead frame. The second lead frame includes leads arranged such that the die pad is downset with respect to the leads.. ... Infineon Technologies Ag

12/01/16 / #20160351413

Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer

According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma source, wherein the plasma chamber of the remote plasma source is coupled to a processing chamber for processing the semiconductor layer; introducing the etch plasma into the processing chamber to remove a native oxide layer from a surface of the semiconductor layer and at most a negligible amount of semiconductor material of the semiconductor layer; and, subsequently, depositing a dielectric layer directly on the surface of the semiconductor layer.. . ... Infineon Technologies Ag

12/01/16 / #20160349304

System and method for short-circuit detection in load chains

An embodiment method for short-circuit detection includes determining a set of local reference voltages each associated with a respective load chain in a plurality of load chains, and determining a global reference voltage in accordance with the set of local reference voltages. The method also includes determining, for each load chain in the plurality of load chains, a respective per-chain reference voltage in accordance with the global reference voltage, and comparing, for each load chain in the plurality of load chains, the respective per-chain reference voltage relative to a respective measured voltage across each load chain to determine a respective short-circuit condition.. ... Infineon Technologies Ag

12/01/16 / #20160349136

Stress compensation systems and methods in sensors

Embodiments relate to stress compensation in differential sensors. In an embodiment, instead of compensating for stress on each sensor element independently, stress compensation circuitry aims to remove stress-related mismatch between two sensor elements using the sensor elements themselves to detect the mismatch. ... Infineon Technologies Ag

11/24/16 / #20160345397

Driving several light sources

A device for driving several light sources is suggested comprising a shift register comprising at least two cells, wherein an output of each cell controls one of the several light sources; wherein the at least two cells are connected in series and are driven by a clock signal; wherein each cell of the shift register comprises a flip-flop and a register; wherein the output of the flip-flop is connected with the input of the register; wherein the register is arranged to store the output of the register based on an update signal and wherein the output of the register controls one of the light sources; wherein the flip-flops of the at least two cells are filled with a data signal based on the clock signal; and wherein after a predetermined number of cycles of the clock signal the update signal is conveyed to the registers driving the light sources according to the values stored in the flip-flops of the cells.. . ... Infineon Technologies Ag

11/24/16 / #20160345392

Driving several light sources

A device for driving several light sources is provided, wherein the several light sources are arranged in a matrix structure; wherein the several light sources of the matrix structure are connected to a semiconductor device; wherein a portion of the semiconductor device corresponds to a light source of the matrix structure, wherein the portion of the semiconductor device comprises a diagnosis function which when activated is arranged for supplying an output diagnosis signal.. . ... Infineon Technologies Ag

11/24/16 / #20160345084

Micro-electro-mechanical system devices

In various embodiments, a micro-electro-mechanical system device is provided. The micro-electro-mechanical system device may include a carrier, a particle filter structure coupled to the carrier, the particle filter structure comprising a grid, wherein the grid comprises a plurality of grid elements, each grid element comprising at least one through hole, and a micro-electro-mechanical system structure disposed on a side of the particle filter structure opposite the carrier. ... Infineon Technologies Ag

11/24/16 / #20160344360

System and method for high input capacitive signal amplifier

In accordance with an embodiment, a method includes determining an amplitude of an input signal provided by a capacitive signal source, compressing the input signal in an analog domain to form a compressed analog signal based on the determined amplitude, converting the compressed analog signal to a compressed digital signal, and decompressing the digital signal in a digital domain to form a decompressed digital signal. In an embodiment, compressing the analog signal includes adjusting a first gain of an amplifier coupled to the capacitive signal source, and decompressing the digital signal comprises adjusting a second gain of a digital processing block.. ... Infineon Technologies Ag

11/24/16 / #20160343998

Batteries and a method for forming a battery cell arrangement

A battery includes a plurality of battery cells encapsulated by an encapsulation structure. The battery also includes an embedding structure separating neighboring ones of the battery cells. ... Infineon Technologies Ag

11/24/16 / #20160343662

Semiconductor structure and method for making same

One or more embodiments relate to a method for making a semiconductor structure, comprising: providing a workpiece; forming a barrier layer over the workpiece; forming a separation layer over the barrier layer; forming a conductive layer over the separation layer; and wet etching the conductive layer.. . ... Infineon Technologies Ag

11/24/16 / #20160343616

Semiconductor device including at least one element

A semiconductor device includes a chip, at least one element electrically coupled to the chip, an adhesive at least partially covering the at least one element, and a mold material at least partially covering the chip and the adhesive.. . ... Infineon Technologies Ag

11/24/16 / #20160343574

Segmented edge protection shield

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. ... Infineon Technologies Ag

11/24/16 / #20160343392

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (esl) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the esl and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the esl; and performing a second etching process to etch the exposed portion of the esl and a portion of the magnetoresistive stack. ... Infineon Technologies Ag

11/24/16 / #20160341619

Single diaphragm transducer structure

A transducer structure including a carrier with an opening and a suspended structure mounted on the carrier which extends at least partially over the opening in the carrier is disclosed. The transducer structure may further include configuring the suspended structure to provide an electrostatic field between the suspended structure and the carrier by changing a distance between the suspended structure and the carrier. ... Infineon Technologies Ag

11/24/16 / #20160340173

System and method for a mems transducer

According to an embodiment, a microelectromechanical systems (mems) transducer includes a first electrode, a second electrode fixed to an anchor at a perimeter of the second electrode, and a mechanical support separate from the anchor at the perimeter of the second electrode and mechanically connected to the first electrode and the second electrode. The mechanical support is fixed to a portion of the second electrode such that, during operation, a maximum deflection of the second electrode occurs between the mechanical structure and the perimeter of the second electrode.. ... Infineon Technologies Ag

11/24/16 / #20160339616

Method and apparatus for simultaneously encapsulating semiconductor dies with layered lead frame strips

A mold injection tool includes a first mold plate having first and second columns of mold cavities, each of the cavities and a first cull block arranged between the first and second columns. A plurality of first channel sections is formed between an adjacent pair of mold cavities. ... Infineon Technologies Ag

11/17/16 / #20160336978

Mixing stage, modulator circuit and a current control circuit

A mixing stage includes a first modulation stage that receives an input signal from a first common node of the mixing stage, a first local oscillator input that receives a local oscillator signal, and a first modulation signal output adapted to provide a first modulated signal. A second modulation stage of the mixing stage includes a second input that receives a phase inverted representation of the input signal from a second common node of the mixing stage, a second local oscillator input that receives the local oscillator signal, and a second modulation signal output adapted to provide a second modulated signal. ... Infineon Technologies Ag

11/17/16 / #20160336947

Corrected temperature sensor measurement

Representative implementations of devices and techniques provide correction for temperature sensor measurement error. In an example, the temperature sensor includes an analog-to-digital converter (adc). ... Infineon Technologies Ag

11/17/16 / #20160336870

Hysteresis controllers for power factor correction in ac/dc power converters

Methods, devices, and integrated circuits are disclosed for controlling a power converter. In one example, a controller includes a peak current reference module configured to output a peak current reference. ... Infineon Technologies Ag

11/17/16 / #20160336733

System and method for a multi-phase snubber circuit

In accordance with an embodiment, a circuit includes a snubber circuit configured to be coupled to outputs of n half-bridge driver circuits that are coupled to n corresponding inductive loads, such that n is an integer greater than one. The snubber circuit includes n diodes and n capacitors. ... Infineon Technologies Ag

11/17/16 / #20160336409

Semiconductor device having an impurity concentration and method of manufacturing thereof

A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body, removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450° c. To 1200° c., and forming a first load terminal structure at the first side of the semiconductor body.. ... Infineon Technologies Ag

11/17/16 / #20160336396

Processing a semiconductor wafer

A semiconductor wafer processing system for processing a semiconductor wafer is presented. The semiconductor wafer processing system comprises: a trench production apparatus configured to produce trenches in the semiconductor wafer, the trenches being arranged next to each other along a first lateral direction (x); a trench filling apparatus configured to epitaxially fill the trenches with a doped semiconductor material; and a controller operatively coupled to at least one of the trench production apparatus and the trench filling apparatus, wherein the controller is configured to control at least one of the trench production apparatus and the trench filling apparatus in dependence of a parameter, the parameter being indicative of at least one of a variation of dopant concentrations of the doped semiconductor material along the first lateral direction (x) that is to be expected when carrying out the epitaxially filling and a deviation of an expected average of the dopant concentrations from a predetermined nominal value.. ... Infineon Technologies Ag

11/17/16 / #20160336308

Integrated circuit including lateral insulated gate field effect transistor

An embodiment of an integrated circuit includes a minimum lateral dimension of a semiconductor well at a first surface of a semiconductor body. The integrated circuit further includes a first lateral dmosfet having a load path electrically coupled to a load pin. ... Infineon Technologies Ag

11/17/16 / #20160336226

Method of reducing a sheet resistance in an electronic device, and an electronic device

Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.. . ... Infineon Technologies Ag

11/17/16 / #20160336013

System for a transducer system with wakeup detection

According to embodiments described herein, a circuit includes an interface circuit configured to be coupled to a transducer and a detection circuit. The interface circuit is configured to provide a digital output signal to a signal input terminal of a processing circuit. ... Infineon Technologies Ag

11/17/16 / #20160334509

Structured-light based multipath cancellation in tof imaging

Representative implementations of devices and techniques provide multipath interference cancelling for imaging devices and systems. In various implementations, structured light is used to diminish, if not cancel interference. ... Infineon Technologies Ag

11/17/16 / #20160332873

Devices with thinned wafer

Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.. . ... Infineon Technologies Ag

11/10/16 / #20160330051

Communication devices

Devices, systems and methods are provided where a request may be transmitted based on a first encoding scheme, and a response to the request may be transmitted based on a second encoding scheme different from the first encoding scheme. The second encoding scheme may comprise an edge-based pulse width modulation encoding scheme.. ... Infineon Technologies Ag

11/10/16 / #20160329996

Failure sensitivity analysis

In one example, a method includes receiving, by one or more processors, a virtual model of an electrical system that includes a plurality of signals and one or more output signals; analyzing, by the one or more processors, the virtual model to determine, for each respective signal of the plurality of signals, data indicating a sensitivity of a particular output signal of the one or more output signals to a failure of the respective signal; and outputting, by the one or more processors and for display, a visual representation of the determined data that indicates the sensitivities of the particular output signal to the failures of the signals.. . ... Infineon Technologies Ag

11/10/16 / #20160329972

Rf front-end with power sensor calibration

One exemplary embodiment of the present invention relates to a circuit that includes at least one rf signal path for an rf signal and at least one power sensor, which is coupled to the rf signal path and configured to generate a sensor signal representing the power of the rf signal during normal operation of the circuit. The circuit further includes a circuit node for receiving an rf test signal during calibration operation of the circuit. ... Infineon Technologies Ag

11/10/16 / #20160329935

Low-complexity acpr-enhancing digital rf mimo transmitter

The present disclosure relates to a low-complexity transmitter architecture that drives phase modulators with digital signals to generate a pulse width modulated (pwm) signal that is transmitted by an antenna. In some embodiments, the system has a pre-processing element that generates first and second digital control signals from a digital baseband signal. ... Infineon Technologies Ag

11/10/16 / #20160329891

System and method for a driving a radio frequency switch

In accordance with an embodiment, a radio frequency (rf) switching circuit includes a plurality of series connected rf switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent rf switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of rf switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected rf switch cells includes a switch transistor.. ... Infineon Technologies Ag

11/10/16 / #20160329411

Circuit arrangement and method of forming a circuit arrangement

A circuit arrangement may be provided. The circuit arrangement may include a semiconductor substrate including a first surface, a second surface opposite the first surface, and a first doped region of a first conductivity type extending from the first surface into the semiconductor substrate. ... Infineon Technologies Ag

11/10/16 / #20160329401

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.. ... Infineon Technologies Ag

11/10/16 / #20160329292

Semiconductor package configured for connection to a board

A semiconductor package includes a plurality of contact areas having a specific contact area and a plurality of solder balls applied to the contact areas. Two or more specific solder balls are applied to the specific contact area, and a minimum distance between the two specific solder balls is set such that the two or more specific solder balls merge into one another when connecting them to a substrate in a reflow process.. ... Infineon Technologies Ag

11/10/16 / #20160329263

Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. ... Infineon Technologies Ag

11/10/16 / #20160329260

Electronic device including a metal substrate and a semiconductor module embedded in a laminate

An electronic device having a substrate including a metal layer, an electrically insulating layer disposed above the substrate, a semiconductor module disposed above the electrically insulating layer and a lamination layer disposed above the electrically insulating layer. The lamination layer at least partially embeds the semiconductor module.. ... Infineon Technologies Ag

11/10/16 / #20160327638

Systems and methods for time of flight measurement using a single exposure

A sensor array arrangement for a time of flight measurement system is disclosed. The arrangement includes a plurality of pixels and circuitry. ... Infineon Technologies Ag

11/10/16 / #20160327408

Axial and perpendicular angle sensor in single package

Embodiments relate to magnetic field angle sensors that utilize axial and perpendicular sensors collectively to infer a rotational angle. In embodiments, a sensor system comprises at least one axial sensor unit and at least one perpendicular sensor unit arranged in a single sensor package or on a single substrate. ... Infineon Technologies Ag

11/10/16 / #20160325602

Mechanical relay and solid-state relay for controlling heating elements

A circuit comprises a mechanical relay and a solid-state relay. The mechanical relay is configured to switch a first supply current of the first heating element on a first supply line. ... Infineon Technologies Ag

11/03/16 / #20160322977

Systems and methods for temperature compensated oscillators having low noise

A voltage controlled oscillator arrangement is disclosed. The arrangement includes a voltage controlled oscillator and a bypass component. ... Infineon Technologies Ag

11/03/16 / #20160322472

Producing a semiconductor device by epitaxial growth

A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (zpn). ... Infineon Technologies Ag

11/03/16 / #20160322464

Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region. ... Infineon Technologies Ag

11/03/16 / #20160322386

Method of forming a semiconductor substrate with buried cavities and dielectric support structures

A semiconductor device includes a semiconductor substrate with a first surface. The device further includes one or more semiconductor devices formed or the first surface in an active area. ... Infineon Technologies Ag

11/03/16 / #20160322357

Method for manufacturing a semiconductor device using tilted ion implantation processes, semiconductor device and integrated circuit

A semiconductor device includes first and second field effect transistors (fets) formed in a semiconductor substrate having a first main surface. The first fet includes first source and drain contact grooves, each running in a first direction parallel to the first main surface, each formed in the first main surface. ... Infineon Technologies Ag

11/03/16 / #20160322347

Switch comprising a field effect transistor and integrated circuit

A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. ... Infineon Technologies Ag

11/03/16 / #20160322333

Electronic module comprising fluid cooling channel and method of manufacturing the same

Various embodiments provide an electronic module comprising a interposer comprising a fluid channel formed in an electrically isolating material and an electrically conductive structured layer; at least one electronic chip attached to the electrically conductive layer and in thermal contact to the fluid channel; and a molded encapsulation formed at least partially around the at least one electronic chip, wherein the electrically conductive structured layer is directly formed on the electrically isolating material.. . ... Infineon Technologies Ag

11/03/16 / #20160322306

Integrated circuit substrate and method for manufacturing the same

The description discloses a method for use in manufacturing integrated circuit chips. The method comprises providing a wafer having a plurality of integrated circuits each provided in an separate active areas, and, for each active area, outside the active area, providing a code pattern that is associated with the integrated circuit. ... Infineon Technologies Ag

11/03/16 / #20160322257

Bimos device with a fully self-aligned emitter-silicon and method for manufacturing the same

A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. ... Infineon Technologies Ag

11/03/16 / #20160322250

Wafer releasing

Embodiments of the present invention provide a chuck system for handling a wafer that comprises a first and a second main surface. The chuck system includes a chuck configured to hold the wafer at the second main surface facing the chuck and a release device. ... Infineon Technologies Ag

11/03/16 / #20160322198

Ion source for metal implantation and methods thereof

An ion source for an implanter includes a first solid state source electrode disposed in an ion source chamber. The first solid state source electrode includes a source material coupled to a first negative potential node. ... Infineon Technologies Ag

11/03/16 / #20160320461

Magnetic field sensor

Embodiments of the present invention provide a magnetic field sensor. The magnetic field sensor includes at least four xmr elements connected in a full bridge circuit including parallel branches. ... Infineon Technologies Ag

11/03/16 / #20160318759

Mems device and method of manufacturing a mems device

A method for manufacturing a mems device is disclosed. Moreover a mems device and a module including a mems device are disclosed. ... Infineon Technologies Ag

11/03/16 / #20160317095

Implantable device and implantable system comprising the same

An implantable device includes a body part and a piezoelectric part. The body part is configured to grasp a pulsatile organic or inorganic tissue. ... Infineon Technologies Ag

10/27/16 / #20160316567

Circuit board embedding a power semiconductor chip

A semiconductor module includes a circuit board and a power semiconductor chip embedded in the circuit board. The power semiconductor chip has a first load electrode. ... Infineon Technologies Ag

10/27/16 / #20160316193

Parametric online calibration and compensation in tof imaging

Representative implementations of devices and techniques provide adaptive calibration and compensation of wiggling error for imaging devices and systems. In various implementations, the wiggling error is modelled using identified parameters. ... Infineon Technologies Ag

10/27/16 / #20160315566

Multi-phase machine current control

A controller for controlling a multi-phase motor is described. The controller may be configured to drive a first virtual multi-phase motor in an active mode and drive a second virtual multi-phase motor in a passive mode. ... Infineon Technologies Ag

10/27/16 / #20160315565

Multi-phase machine current control

A controller for controlling a multi-phase motor is described. The controller may include a torque control module and a current control module. ... Infineon Technologies Ag

10/27/16 / #20160315154

Method of planarizing a semiconductor wafer and semiconductor wafer

Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface; and forming a mask layer on the surface of the semiconductor wafer, wherein a thickness of the mask layer is smaller in thinning areas, which are to be thinned for planarizing, than in areas which are not to be thinned for planarizing.. . ... Infineon Technologies Ag

10/27/16 / #20160315012

Method of detaching semiconductor material from a carrier and device for performing the method

Various embodiments provide a method of detaching semiconductor material from a carrier, wherein the method comprises providing a carrier having attached thereto a layer of semiconductor material, wherein the layer comprises an edge portion; and guiding an air stream onto the edge portion of the layer of semiconductor material.. . ... Infineon Technologies Ag

10/27/16 / #20160313288

Photo-acoustic gas sensor module having light emitter and detector units

A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. ... Infineon Technologies Ag

10/27/16 / #20160313283

Sensor device, a method and a sensor to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of liquid

A method to determine a relative concentration of a first kind of ions with respect to a second kind of ions solute in a drop of a liquid comprises providing a voltage to a measurement electrode and a counter electrode, the measurement electrode being provided over a semiconductor substrate comprising a plurality of channels, the channels connecting a cavity and the measurement electrode, wherein the counter electrode is arranged to be in contact with the cavity, when the cavity, the measurement electrode and the counter electrode are arranged to accommodate the drop of a liquid and allow a voltage to be applied to the drop of liquid. The method further comprises determining a current or a change of the current flowing through the drop of liquid in response to the applied voltage; and providing an evaluation signal indicative of the relative concentration based on the determined current or the determined change of current.. ... Infineon Technologies Ag

10/27/16 / #20160311679

Chip package and a method of producing the same

A method of producing a chip package is described. A plurality of chips is provided on a first wafer. ... Infineon Technologies Ag

10/20/16 / #20160308544

Analog-to-digital conversion

At least one asymmetry element is configured to receive an input signal and is coupled to a first branch of a bi-stable flip-flop comprising the first branch and a second branch. An asymmetry between the first branch and the second branch depends on the input signal. ... Infineon Technologies Ag

10/20/16 / #20160308495

Wideband doherty amplifier circuit with integrated transformer line balun

A doherty amplifier circuit includes an rf input terminal, an rf output terminal, a main amplifier having a first input terminal and a first output driving terminal, and a peaking amplifier having a second input terminal and a second output driving terminal. An output combining network is configured to feed output current from the first and second output driving terminals into a summing node. ... Infineon Technologies Ag

10/20/16 / #20160308120

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A magnetoresistive device can include a first magnetic layer structure having a first length, a barrier layer disposed on the first magnetic layer structure, a second magnetic layer structure disposed on the barrier layer and having a second length that is less than the first length.. . ... Infineon Technologies Ag

10/20/16 / #20160308044

Semiconductor device comprising a transistor

A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. ... Infineon Technologies Ag

10/20/16 / #20160307996

Semiconductor device, integrated circuit and method for manufacturing the semiconductor device

A semiconductor device comprises a transistor in a semiconductor body having a first main surface and a second main surface, the first main surface being opposite to the second main surface. The transistor comprises a source region at the first main surface, a drain region, a body region, a drift zone, and a gate electrode at the body region. ... Infineon Technologies Ag

10/20/16 / #20160307891

Semiconductor device comprising a transistor including a body contact portion and method for manufacturing the semiconductor device

A semiconductor device comprises a transistor in a semiconductor body having a main surface. The transistor comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. ... Infineon Technologies Ag

10/20/16 / #20160307889

Semiconductor component arrangement comprising a trench transistor

A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body and at least one gate electrode disposed in the at least one trench. The method also includes producing a capacitor structure comprising an electrode structure disposed in at least one further trench, the electrode structure comprising at least one electrode. ... Infineon Technologies Ag

10/20/16 / #20160307885

Semiconductor device including a diode at least partly arranged in a trench

A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench. ... Infineon Technologies Ag

10/20/16 / #20160307858

Processing of thick metal pads

In an embodiment of the present invention, a method of forming a semiconductor device includes providing a semiconductor substrate including a first chip region and a second chip region. A first contact pad is formed over the first chip region and a second contact pad is formed over the second chip region. ... Infineon Technologies Ag

10/20/16 / #20160307849

Semiconductor device and manufacturing method

The present disclosure relates to a semiconductor device, comprising a semiconductor substrate; a trench extending into the semiconductor substrate, wherein the trench is partly filled with an electrically conductive structure insulated from the semiconductor substrate; a polysilicon or amorphous silicon routing structure laterally bridging the trench; and an insulation layer between the trench and the routing structure.. . ... Infineon Technologies Ag

10/20/16 / #20160307753

Method for processing a carrier and an electronic component

In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.. ... Infineon Technologies Ag

10/20/16 / #20160307608

Method and apparatus for controlling current in an array cell

A method and an apparatus for controlling current in an array cell is disclosed. The method includes applying a supply voltage to a first access point of a transistor, precharging a second access point of the transistor to a predetermined voltage, applying a control voltage to a third access point of the transistor, and discharging the second access point of the transistor to turn on the transistor which causes a current flow through the array cell connected to the transistor.. ... Infineon Technologies Ag

10/20/16 / #20160306696

Marker programming in non-volatile memories

A method and a memory controller for accessing a non-volatile memory are disclosed. The method includes reading a first memory region of the non-volatile memory, ascertaining whether the first memory region contains a predetermined data pattern wherein the predetermined data pattern has no influence on resulting error correcting data determined for at least the first memory region. ... Infineon Technologies Ag

10/20/16 / #20160306034

Rf system with an rfic and antenna system

In accordance with an embodiment, a packaged radio frequency (rf) circuit includes a radio frequency integrated circuit (rfic) disposed on a substrate that has plurality of receiver circuits coupled to receive ports at a first edge of the rfic, and a first transmit circuit coupled to a first transmit port at a second edge of the rfic. The packaged rf circuit also includes a receive antenna system disposed on the package substrate adjacent to the first edge of the rfic and a first transmit antenna disposed on the package substrate adjacent to the second edge of the rfic and electrically coupled to the first transmit port of the rfic. ... Infineon Technologies Ag

10/20/16 / #20160306016

Magnetoresistive devices

Magnetoresistive devices can include a first and second sensor. Each of the first and second sensors can be configured to sense a first magnetic field component and a second magnetic field component. ... Infineon Technologies Ag

10/20/16 / #20160305997

System and method for a capacitive sensor

In accordance with an embodiment, a method of performing a measurement with a capacitive sensor includes generating a periodic excitation signal that includes a series of pulses and smoothing edge transitions of the series of pulses to form a shaped periodic excitation signal that includes a flat region between the smoothed edge transitions. The method further includes providing the shaped periodic excitation signal to a first port of the capacitive sensor and measuring a signal provided by a second port of the capacitive sensor.. ... Infineon Technologies Ag

10/20/16 / #20160305838

System and method for a mems sensor

A measurement method includes generating, by a sensor, a response signal in response to an excitation signal. The method also includes generating a sampling clock signal in accordance with a pseudo-random jitter, and sampling the response signal in accordance with the sampling clock signal to determine a plurality of digital samples. ... Infineon Technologies Ag

10/20/16 / #20160305837

System and method for a packaged mems device

According to an embodiment, a device includes a substrate, a transducer die disposed over the substrate, a cover disposed over the transducer die, and a support structure connecting the cover to the substrate. The support structure includes a port configured to allow transfer of fluidic signals between an ambient environment and the transducer die.. ... Infineon Technologies Ag

10/20/16 / #20160305835

System and method for a mems sensor

An embodiment includes a method of performing a measurement using a micro-electro-mechanical system (mems) device that includes a plurality of mems sensors having different resonant frequencies. The method includes applying an excitation signal to a first port of the mems device such that each of the plurality of the mems sensors is stimulated by the excitation signal. ... Infineon Technologies Ag

10/20/16 / #20160305040

Method of manufacturing a silicon wafer

A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.. . ... Infineon Technologies Ag

10/20/16 / #20160305012

Ion implantation apparatus with ion beam directing unit

An ion implantation apparatus includes an ion beam directing unit, a substrate support, and a controller. The controller is configured to effect a relative movement between an ion beam passing the ion beam directing unit and the substrate support. ... Infineon Technologies Ag

10/13/16 / #20160301313

Phase current estimation for switching power converters

A phase current estimator for a switching power converter includes analog circuitry for generating a phase current estimate error by comparing a phase current of the switching power converter to an analog representation of an estimate of the phase current, the phase current having a sawtooth or triangular waveform. The phase current estimator further includes digital circuitry for revising the phase current estimate based on the phase current estimate error and a plurality of parameters associated with operation of the switching power converter, so that the phase current estimate tracks the sawtooth or triangular waveform of the phase current.. ... Infineon Technologies Ag

10/13/16 / #20160301249

Communicating between galvanically isolated devices using waveguides

In one example, a system includes one or more waveguides configured to guide radio frequency (rf) signals, a controller comprising a transmitter configured to output rf signals representing a control signal via the one or more waveguides, and a power module. In this example, the power module includes a receiver configured to receive the rf signals representing the control signal from the controller via the one or more waveguides, and a driver configured to output a power signal to a load based on the control signal.. ... Infineon Technologies Ag

10/13/16 / #20160300945

Semiconductor device with cell trench structures and a contact structure

A semiconductor device includes first and second cell trench structures extending from a first surface into a semiconductor body, a first semiconductor mesa separating the cell trench structures. The first cell trench structure includes a first buried electrode and a first insulator layer. ... Infineon Technologies Ag

10/13/16 / #20160300944

Semiconductor device having a channel separation trench

A semiconductor device includes a transistor formed in a semiconductor substrate having a main surface. The transistor includes a source region of a first conductivity type, a drain region of the first conductivity type, a channel region of a second conductivity type, a gate trench adjacent to a first sidewall of the channel region, a gate conductive material disposed in the gate trench, the gate conductive material being connected to a gate terminal, and a channel separation trench adjacent to a second sidewall of the channel region. ... Infineon Technologies Ag

10/13/16 / #20160300937

Semiconductor device with rear-side insert structure

A semiconductor device includes a semiconductor body and a rear side insertion structure. The semiconductor body has a first surface at a front side and a second surface parallel to the first surface at a rear side, an active area and an edge termination area separating the active area from an outer surface of the semiconductor body. ... Infineon Technologies Ag

10/13/16 / #20160300920

Method of manufacturing a semiconductor device with a polysilicon-filled trench

A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body at a first surface of the semiconductor body, forming a polysilicon material in the trench, introducing dopants into the polysilicon material by a high dose and low energy process, and performing a thermal treatment configured to drive-in the dopants into the polysilicon material.. . ... Infineon Technologies Ag

10/13/16 / #20160300827

Protection devices with trigger devices and methods of formation thereof

A semiconductor device includes a vertical protection device having a thyristor and a lateral trigger element disposed in a substrate. The lateral trigger element is for triggering the vertical protection device.. ... Infineon Technologies Ag

10/13/16 / #20160300719

Method of manufacturing a semiconductor device having a rear-side insert structure

A method of manufacturing a semiconductor device includes forming a cavity in a first semiconductor layer formed on a semiconducting base layer, the cavity extending from a process surface of the first semiconductor layer at least down to the base layer, forming a recessed mask liner on a portion of a sidewall of the cavity distant to the process surface or a mask plug in a portion of the cavity distant to the process surface, and growing a second semiconductor layer on the process surface by epitaxy, the second semiconductor layer spanning the cavity.. . ... Infineon Technologies Ag

10/13/16 / #20160300598

Circuit

According to one embodiment, a circuit is described including a circuit component configured to switch from a first state into a second state including a node whose potential changes by a predetermined voltage when the circuit component switches from the first state into the second state, a line coupled with the node wherein the switching of the circuit component from the first state into the second state draws or injects a predetermined charge from or into the line, a capacitor coupled to the line and a compensation circuit configured to generate a predetermined multiple of the predetermined voltage and to compensate the charge drawn from or injected into the line by driving the capacitor with the multiple of the predetermined voltage.. . ... Infineon Technologies Ag

10/13/16 / #20160297672

Semiconductor device including a cavity lid

A semiconductor device having a lid, and method of making a semiconductor device having a lid is disclosed. The semiconductor device includes a substrate. ... Infineon Technologies Ag

10/06/16 / #20160294414

Chip and method for detecting a change of a stored data vector

A chip is provided having processing circuits, each processing circuit configured to process a data vector to be stored according to a multiplication of the vector by a processing matrix, the sum of the processing matrices corresponding to the non-unit-matrix part of a generator matrix of a predetermined linear code in reduced form, a summing circuit to sum the results of the processing operations of the data vector, a storage circuit to store the data vector to be stored together with the sum of the generated results as one data word in a memory, a read-out circuit to read the stored data word out of the memory, and a decoding circuit to check whether the data word read out is a valid code word of the linear code and to output an error signal if the data word is not a valid code word of the linear code.. . ... Infineon Technologies Ag

10/06/16 / #20160294384

Electronic drive circuit and method

Disclosed is an electronic drive circuit and a drive method. The drive circuit includes an output; a first output transistor comprising a control node and a load path, wherein the load path is coupled between the output and a first supply node; a voltage regulator configured to control a voltage across the load path of the first output transistor; and a first driver configured to drive the first output transistor based on a first control signal.. ... Infineon Technologies Ag

10/06/16 / #20160294365

Serial capacitance tuner

An impedance matching network comprises a first signal terminal configured to receive a signal from a source circuit and a second signal terminal configured to provide the signal to a load circuit. The network further comprises a series branch comprising a variable capacitive component between the first signal terminal and the second signal terminal. ... Infineon Technologies Ag

10/06/16 / #20160294340

Multi-cavity package having single metal flange

A multi-cavity package includes a single metal flange having first and second opposing main surfaces, a circuit board attached to the first main surface of the single metal flange, the circuit board having a plurality of openings which expose different regions of the first main surface of the single metal flange, and a plurality of semiconductor dies each of which is disposed in one of the openings in the circuit board and attached to the first main surface of the single metal flange. The circuit board includes a plurality of metal traces for electrically interconnecting the semiconductor dies to form a circuit. ... Infineon Technologies Ag

10/06/16 / #20160293752

Semiconductor device comprising auxiliary trench structures and integrated circuit

An embodiment of a semiconductor device comprises a trench transistor cell array in a semiconductor body. The semiconductor device further comprises an edge termination region of the trench transistor cell array. ... Infineon Technologies Ag

10/06/16 / #20160293712

Semiconductor wafer and manufacturing method

A semiconductor wafer includes first and second main surfaces opposite to each other along a vertical direction, and a side surface encircling the semiconductor wafer. A lateral distance perpendicular to the vertical direction between the side surface and a center of the semiconductor wafer includes first and second parts. ... Infineon Technologies Ag

10/06/16 / #20160293691

Semiconductor device with channelstopper and method for producing the same

A vertical semiconductor device comprises a substrate having a front surface and a back surface, an active area (aa) located in the substrate, having a drift region doped with a first dopant type, an edge termination region (er) laterally surrounding the active area (aa), a channelstopper terminal provided at the front surface and located in the edge termination region (er), and a first suppression trench located on a side of the channelstopper terminal towards the active region (aa), and provided adjacent to the channelstopper terminal. Further, a production method for such a semiconductor device is provided.. ... Infineon Technologies Ag

10/06/16 / #20160293550

Semiconductor packages and methods of forming the same

In one embodiment, a method of fabricating a semiconductor package includes forming a first plurality of die openings on a laminate substrate. The laminate substrate has a front side and an opposite back side. ... Infineon Technologies Ag

10/06/16 / #20160293524

Printed circuit board including a leadframe with inserted packaged semiconductor chips

An electronic module includes a circuit board, having a carrier layer, the carrier layer having a plurality of recess areas in a main surface thereof, and a plurality of electronic sub-modules, each one of the sub-modules being disposed in one of the recess areas and each one of the sub-modules having a carrier, a semiconductor chip disposed on the carrier, and an encapsulation material disposed on the carrier and on the semiconductor chip.. . ... Infineon Technologies Ag

10/06/16 / #20160293474

Semiconductor processing system

The semiconductor processing system includes a reactor chamber that has an upper wall and a lower wall. A hold member is disposed in the reactor chamber to hold a semiconductor substrate in such a way that it faces the lower wall of the reactor chamber.. ... Infineon Technologies Ag

10/06/16 / #20160291935

Spectral shaping of pseudorandom binary sequence

A pseudorandom binary sequence having a first sampling rate is generated. Based on the pseudorandom binary sequence, a digital filter generates a spectrally shaped pseudorandom binary sequence having a second sampling rate. ... Infineon Technologies Ag

10/06/16 / #20160291059

Current sensor, system and method

Current sensors, systems and methods are provided. A test current is injected via a pair of force terminals into a conductor and a pair of sense terminals are configured to provide an input signal that corresponds to a voltage drop across the conductor. ... Infineon Technologies Ag

10/06/16 / #20160290837

Sensing a physical quantity in relation to a sensor

A sensor operates to produce a differential signal with a voltage regulated that generates a regulated voltage to a first sensor element for detecting a physical parameter. A current mirror circuit is configured to provide a first sensor current to the first sensor element, detect the first sensor current at the first sensor element and duplicate the detected current to provide a second sensor current to a second sensor element. ... Infineon Technologies Ag

10/06/16 / #20160288596

Systems and methods using a reference marker

A tire pressure monitor sensor is disclosed. The sensor includes a wireless transmitter and a processing unit. ... Infineon Technologies Ag

09/29/16 / #20160284990

Semiconductor devices having insulating substrates and methods of formation thereof

In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. ... Infineon Technologies Ag

09/29/16 / #20160284840

Method for producing a controllable semiconductor component having trenches with different widths and depths

A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. In a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. ... Infineon Technologies Ag

09/29/16 / #20160284803

Bipolar transistor device with an emitter having two types of emitter regions

Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recombination region is located at least in the first type emitter regions and the third type emitter regions.. . ... Infineon Technologies Ag

09/29/16 / #20160284795

Field effect semiconductor component and method for producing it

What is provided is a field effect component including a semiconductor body, which extends in an edge zone from a rear side as far as a top side and which includes a semiconductor mesa, which extends in a vertical direction, which is perpendicular to the rear side and/or the top side. The semiconductor body in a vertical cross section further includes a drift region, which extends at least in the edge region as far as the top side and which is arranged partly in the semiconductor mesa, and a body region, which is arranged at least partly in the semiconductor mesa and which forms a pn junction with the drift region. ... Infineon Technologies Ag

09/29/16 / #20160284664

Method for producing a circuit carrier arrangement having a carrier which has a surface formed by an aluminum/silicon carbide metal matrix composite material

According to a method for producing a circuit carrier arrangement, a carrier which has a surface section formed by an aluminum/silicon carbide metal matrix composite material is provided. A circuit carrier, which has an insulation carrier with a lower side onto which a lower metallization layer is applied, is also provided. ... Infineon Technologies Ag

09/29/16 / #20160284661

Electronic device and method for production

An electronic device and method for production is disclosed. One embodiment provides an integrated component having a first layer which is composed of copper or a copper alloy or which contains copper or a copper alloy, and having an electrically conductive second layer, whose material differs from the material of the first layer, and a connection apparatus which is arranged on the first layer and on the second layer.. ... Infineon Technologies Ag

09/29/16 / #20160284648

Method for processing a die

In various embodiments, a die is provided. The die may include a die body, and at least one of a front side metallization structure on a front side of the die body and a back side metallization structure on a back side of the die body such that the die is plane or includes a positive radius of curvature at a die attach process temperature range.. ... Infineon Technologies Ag

09/29/16 / #20160283765

Automatic storage scheme by simultaneous id recognition

A code input device is used to simultaneously read a first code and a second code. The code input device includes at least one of a camera or a field reader. ... Infineon Technologies Ag

09/29/16 / #20160283635

Integrated circuits and methods of design and manufacture thereof

Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. ... Infineon Technologies Ag

09/29/16 / #20160282407

Verification of gate driver protection logic

A gate driver is described that includes a gate signal module configured to output a gate signal of the gate driver for driving a gate terminal of a semiconductor device. The gate driver further includes a test module configured to generate a simulated failure condition at a semiconductor device during a test of a monitoring and protection feature of the gate driver. ... Infineon Technologies Ag

09/29/16 / #20160282212

Molded semiconductor package having enhanced local adhesion characteristics

A molded semiconductor package includes a substrate having opposing first and second main surfaces, a semiconductor die attached to the first main surface of the substrate, an adhesion adapter attached to the second main surface of the substrate or a surface of the semiconductor die facing away from the substrate, and a mold compound encapsulating the semiconductor die, the adhesion adapter and at least part of the substrate. The adhesion adapter is configured to adapt adhesion properties of the mold compound to adhesion properties of the substrate or semiconductor die to which the adhesion adapter is attached, such that the mold compound more strongly adheres to the adhesion adapter than directly to the substrate or semiconductor die to which the adhesion adapter is attached. ... Infineon Technologies Ag

09/22/16 / #20160277844

System and method for an acoustic transducer and environmental sensor package

According to an embodiment, a transducer package includes a circuit board including a port, a lid disposed over the port, an acoustic transducer disposed over the port and including a membrane, and an environmental transducer disposed at the circuit board in the port. The lid encloses a first region, and the membrane separates the port from the first region. ... Infineon Technologies Ag

09/22/16 / #20160277546

Frequency ramp generation

A method for generating a digital frequency ramp signal including a sequence of frequency ramps is disclosed herein. In accordance with one embodiment of the present invention the method comprises loading a first data word of a data record from a memory. ... Infineon Technologies Ag

09/22/16 / #20160277149

Spc sensor interface with partial parity protection

A sensor system is configured to communicate at least partially protected sensor data over a communication interface. The sensor system includes a sensor element and a communication interface communicatively coupled to the sensor element. ... Infineon Technologies Ag

09/22/16 / #20160277078

System and method for high-speed analog beamforming

In accordance with an embodiment, a radio frequency (rf) front end system includes a first chip that includes a frequency multiplier coupled to a first input terminal. The frequency multiplier is configured to form an upscaled reference signal by upscaling in frequency an oscillating reference signal received at the first input terminal. ... Infineon Technologies Ag

09/22/16 / #20160277009

Systems and methods having omnipolar comparators for magnetic switches

An omnipolar magnetic sensor system includes an input stage and a behavior component. The input stage is configured to receive a source signal and to selectively chop the source signal. ... Infineon Technologies Ag

09/22/16 / #20160276819

Power switch device

Devices and methods are provided which comprise detecting an irregular condition at a control terminal of a power switch device.. . ... Infineon Technologies Ag

09/22/16 / #20160276279

Semiconductor device

A semiconductor device includes a semiconductor chip, an electrically insulating element separated from the semiconductor chip by a space, and encapsulation material disposed in the space. The semiconductor chip includes a first face having a contact, and the electrically insulating element defines at least one through-hole. ... Infineon Technologies Ag

09/22/16 / #20160273991

Circuits, methods, and computer programs to detect mechanical stress and to monitor a system

Embodiments provide a circuit, a method, and a computer program configured to detect mechanical stress and a circuit, a method, and a computer program configured to monitor safety of a system. The detection circuit is configured to monitor a mechanical stress level of a semiconductor circuit. ... Infineon Technologies Ag

09/15/16 / #20160268498

Method for doping an active hall effect region of a hall effect device and hall effect device having a doped active hall effect region

Methods for doping an active hall effect region of a hall effect device in a semiconductor substrate, and hall effect devices having a doped active hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active hall effect region by annealing the semiconductor substrate with the active hall effect region having the first and the second doping profile.. ... Infineon Technologies Ag

09/15/16 / #20160268423

Semiconductor device, integrated circuit and method of manufacturing a semiconductor device

A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a drain region, a channel region, a drift zone, and a gate electrode adjacent to at least two sides of the channel region. ... Infineon Technologies Ag

09/15/16 / #20160268422

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming a first semiconductor layer on a semiconductor substrate of a first conductivity type having a continuous first area and a second area, introducing dopants of the first conductivity type in the continuous first area of the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer, and forming trenches in the second semiconductor layer in the continuous first area.. . ... Infineon Technologies Ag

09/15/16 / #20160268397

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming a transistor in a semiconductor substrate having a first main surface. The transistor is formed by forming a source region, forming a drain region, forming a channel region, forming a drift zone, and forming a gate electrode adjacent to at least two sides of the channel region. ... Infineon Technologies Ag

09/15/16 / #20160268177

Sensor for a semiconductor device

A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.. ... Infineon Technologies Ag

09/15/16 / #20160266217

Xmr sensors with serial segment strip configurations

Embodiments relate to xmr sensors, including giant magnetoresistive (gmr), tunneling magnetoresistive (tmr) or anisotropic magnetoresistive (amr), and the configuration of xmr strips within xmr sensors. In an embodiment, an xmr strip includes a plurality of differently sized and/or differently oriented serially connected portions. ... Infineon Technologies Ag

09/15/16 / #20160266197

Testing of semiconductor devices and devices, and designs thereof

In accordance with an embodiment of the present invention, a method of testing a plurality of semiconductor devices includes applying a stress voltage having a peak voltage on a shield line disposed over a substrate. The substrate has functional circuitry of a semiconductor device. ... Infineon Technologies Ag

09/15/16 / #20160266185

System and method for a phase detector

In accordance with an embodiment, a method of detecting a phase difference between a first signal and a second signal include latching a state of the first signal using the second signal as a clock to produce a first latched signal, latching a state of the second signal using the first signal as a clock to produce a second latched signal summing the first latched signal and the second latched signal to produce an indication of whether the first signal is leading or lagging the second signal.. . ... Infineon Technologies Ag

09/08/16 / #20160260829

Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode region

A semiconductor device includes trench structures that extend from a first surface into a semiconductor body. The trench structures include a gate structure and a contact structure that extends through the gate structure, respectively. ... Infineon Technologies Ag

09/08/16 / #20160260803

Method of manufacturing an integrated circuit having field effect transistors including a peak in a body dopant concentration

An integrated circuit having field effect transistors and manufacturing method. One embodiment provides an integrated circuit including a first fet and a second fet. ... Infineon Technologies Ag

09/08/16 / #20160260798

Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction

A semiconductor device includes a semiconductor body with a first main crystal direction parallel to a horizontal plane. Longitudinal axes of trench gate structures are tilted to the first main crystal direction by a tilt angle of at least 2 degree and at most 30 degree in the horizontal plane. ... Infineon Technologies Ag

09/08/16 / #20160260709

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

A semiconductor device includes trench gate structures in a semiconductor body with hexagonal crystal lattice. A mean surface plane of a first surface is tilted to a <1-100> crystal direction by an off-axis angle, wherein an absolute value of the off-axis angle is in a range from 2 degree to 12 degree. ... Infineon Technologies Ag

09/08/16 / #20160260658

Source down semiconductor devices and methods of formation thereof

A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. ... Infineon Technologies Ag

09/08/16 / #20160260654

Plastic cooler for semiconductor modules

A cooling apparatus includes a plurality of discrete modules and a plastic housing. Each module includes a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound and a first cooling plate at least partly uncovered by the mold compound. ... Infineon Technologies Ag

09/01/16 / #20160254355

Electronic device

According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer, respectively, so that the electric characteristic of the two-dimensional material in the first contact area and in the second contact area of the layer is different from the electric characteristic of the two-dimensional material in the device area of the layer.. . ... Infineon Technologies Ag

09/01/16 / #20160254200

Method for detecting a crack in a semiconductor body of a semiconductor component

A semiconductor component includes a semiconductor body having a bottom side, a top side spaced distant from the bottom side in a vertical direction, and a thickness in the vertical direction, and a crack sensor configured to detect a crack in the semiconductor body. The crack sensor extends into the semiconductor body. ... Infineon Technologies Ag

09/01/16 / #20160253153

Random number generator

According to one embodiment, a random number generator is provided including an oscillator arrangement including a first oscillator and a second oscillator. The oscillator arrangement is configured such that a predetermined output state of the second oscillator triggers a transition of the first oscillator from a first oscillation speed to a second oscillation speed and a predetermined output state of the first oscillator triggers a transition of the first oscillator from the second oscillation speed to the first oscillation speed. ... Infineon Technologies Ag

09/01/16 / #20160252599

Magnetic field sensor

Devices and methods are provided where switches associated with a magnetic field sensor are used to provide error information. In particular, a device is provided that includes a magnetic field sensor, a plurality of switches associated with the magnetic field sensor, and a control circuit configured to control the plurality of switches and to provide at least one signal indicative of a fault based on operation of the switches.. ... Infineon Technologies Ag

09/01/16 / #20160252543

Low noise zero crossing detection for indirect tire pressure monitoring

A magnetic speed sensor may comprise a digital component configured to estimate a zero crossing event based on a plurality of sensor signal samples. The digital component may output, to a control unit, a speed signal that is based on the estimated zero crossing event.. ... Infineon Technologies Ag

08/25/16 / #20160248468

Communication device and method for calibrating an oscillator

According to one embodiment, a communication device is described including an oscillator configured to provide a frequency signal, a first transceiver circuit, a second transceiver circuit configured to transmit and receive signals based on the frequency signal and a calibration circuit configured to generate a calibration signal representing the carrier frequency of a signal received by the first transceiver circuit and to calibrate the oscillator based on the calibration signal.. . ... Infineon Technologies Ag

08/25/16 / #20160248388

System and method for a low noise amplifier module

In accordance with an embodiment, a circuit includes a low noise amplifier transistor disposed on a first integrated circuit, a single pole multi throw (spmt) switch disposed on a second integrated circuit, and a bypass switch coupled between a control node of the low noise amplifier transistor and an output node of the low noise amplifier transistor. The spmt switch couples a plurality of module input terminals to a control node of the low noise amplifier transistor, and the bypass switch including a first switch coupled between the control node of the low noise amplifier transistor and an intermediate node, a second switch coupled between the intermediate node and the output node of the low noise amplifier transistor, and a third switch coupled between the intermediate node and a first reference node. ... Infineon Technologies Ag

08/25/16 / #20160248242

System and method for a fault protection circuit

According to an embodiment, a fault protection system includes a first power supply terminal, a second power supply terminal, an error circuit configured to receive a power supply signal, and a power supply circuit coupled to the error circuit, the first power supply terminal, and the second power supply terminal. The power supply circuit is configured to provide the power supply signal from the first power supply terminal during a first operation mode and provide the power supply signal from the second power supply terminal during a second operation mode.. ... Infineon Technologies Ag

08/25/16 / #20160247780

Method of manufacturing a semiconductor package having an integrated microwave component

A method of manufacturing an array of semiconductor device packages includes placing a plurality of semiconductor chips on a temporary carrier, covering the plurality of semiconductor chips with an encapsulation material to form an encapsulation body, providing a plurality of microwave components each including at least one electrically conducting wall structure integrated in the encapsulation body, forming a plurality of electrical interconnects each configured to electrically couple a semiconductor chip and a microwave component, and separating the encapsulation body into single semiconductor device packages each including a semiconductor chip, a microwave component and an electrical interconnect.. . ... Infineon Technologies Ag

08/25/16 / #20160247739

Bonded system and a method for adhesively bonding a hygroscopic material

A bonded system includes a reconstituted wafer including a hygroscopic material. A moisture barrier layer is arranged over a surface of the reconstituted wafer. ... Infineon Technologies Ag

08/25/16 / #20160247703

Semiconductor substrate arrangements and a method for forming a semiconductor substrate arrangement

A semiconductor substrate arrangement includes a carrier wafer and a plurality of semiconductor substrate pieces fixed to the carrier wafer and distributed laterally over the carrier wafer. The semiconductor substrate pieces of the plurality of semiconductor substrate pieces comprise a hexagonal shape.. ... Infineon Technologies Ag

08/25/16 / #20160246573

Arrangement and method for checking the entropy of a random number sequence

According to one embodiment, an arrangement for checking the entropy of a random number sequence is described including a random source configured to provide a random input sequence, a post-processing circuit configured to receive the random input sequence and to generate a random number sequence from the random input sequence by performing a post-processing and a decimation of the random input sequence, an inverse post-processing circuit configured to receive the random number sequence from the post-processing circuit and to generate a processed random number sequence by a processing of the random number sequence that is inverse to the post-processing performed by the post-processing circuit, and an entropy checker configured to check the entropy of the random number sequence based on the processed random number sequence.. . ... Infineon Technologies Ag

08/25/16 / #20160246314

Partitioning of a chip supporting a sw-control architecture for inductive loads

A current control system is disclosed. The current control system may include a controller configured to provide a control signal, an a/d converter dedicated to the controller, a driver configured to supply a current based on the control signal and a sensor configured to provide a digital signal representative of the current to the controller. ... Infineon Technologies Ag

08/25/16 / #20160245898

Systems and methods for cascading radar chips having a low leakage buffer

A cascaded radar sensor arrangement is disclosed. The arrangement includes a first buffer and a second buffer. ... Infineon Technologies Ag

08/25/16 / #20160245880

Resistive element

A resistive element includes a resistive region in a semiconductor substrate, a first contact structure and a second contact structure. The semiconductor substrate includes a first main surface area. ... Infineon Technologies Ag

08/25/16 / #20160244326

Semiconductor element and methods for manufacturing the same

A semiconductor element and method are provided such that the method includes providing a processed substrate arrangement including a processed semiconductor substrate and a metallization layer structure on a main surface of the processed semiconductor substrate. The method further includes release etching for generating a kerf in the metallization layer structure at a separation region in the processed semiconductor substrate, the separation region defining a border between a die region of the processed substrate arrangement and at least a second region of the processed substrate arrangement.. ... Infineon Technologies Ag

08/18/16 / #20160241953

Surface mountable microphone package, a microphone arrangement, a mobile phone and a method for recording microphone signals

A surface mountable microphone package comprises a first microphone and a second microphone. Furthermore, the surface mountable microphone package comprises a first opening for the first microphone and a second opening for the second microphone. ... Infineon Technologies Ag

08/18/16 / #20160241943

System and method for a transducer interface

According to an embodiment, an interface circuit includes a current replicator and a receiver. The current replicator includes a power terminal coupled to a first reference node, an output terminal configured to output a signal proportional to a signal received from a transducer, and an interface terminal coupled to the transducer. ... Infineon Technologies Ag

08/18/16 / #20160241239

Semiconductor chip

According to one embodiment, a chip has a circuit with at least one p channel field effect transistor (fet); at least one n channel fet; a first and a second power supply terminal; wherein the n channel fet, if supplied with the upper supply potential at its gate, supplies the lower supply potential to the gate of the p channel fet; and the p channel fet, if supplied with the lower supply potential at its gate, supplies the upper supply potential to the gate of the n channel fet; wherein the logic state of the gate of the p channel fet and of the n channel fet can only be changed by at least one of the first and second supply voltage to the circuit; and a connection coupled to the gate of the p channel fet or the n channel fet and a further component of the semiconductor chip.. . ... Infineon Technologies Ag

08/18/16 / #20160241231

Rf switch

A bipolar transistor switches for radio frequency signals are disclosed. In an embodiment a device includes a first radio frequency (rf) terminal, a second rf terminal, and a bipolar transistor, wherein an emitter terminal of the bipolar transistor is coupled to the first rf terminal, and wherein a collector terminal of the bipolar transistor is coupled to the second rf terminal. ... Infineon Technologies Ag

08/18/16 / #20160241186

Stress compensated oscillator circuitry and integrated circuit using the same

A stress compensated oscillator circuitry comprises a sensor arrangement for providing a sensor output signal ssensor, wherein the sensor output signal ssensor is based on an instantaneous stress or strain component σ in the semiconductor substrate, a processing arrangement for processing the sensor output signal ssensor and providing a control signal scontrol depending on the instantaneous stress or strain component σ in the semiconductor substrate, and an oscillator arrangement for providing an oscillator output signal sosc having an oscillator frequency fosc based on the control signal scontrol, wherein the control signal scontrol controls the oscillator output signal sosc, and wherein the control signal scontrol reduces the influence of the instantaneous stress or strain component σ in the semiconductor substrate onto the oscillator output signal sosc, so that the oscillator circuitry provides a stress compensated oscillator output signal.. . ... Infineon Technologies Ag

08/18/16 / #20160241140

High-frequency switching circuit

A high-frequency switching circuit includes a high-frequency switching transistor, wherein a high-frequency signal-path extends via a channel-path of the high-frequency switching transistor. The high-frequency switching circuit includes a control circuit and the control circuit is configured to apply at least two different bias potentials to a substrate of the high-frequency switching transistor, depending on a control signal received by the control circuit.. ... Infineon Technologies Ag

08/18/16 / #20160240644

Semiconductor devices and a method for forming a semiconductor device

A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. ... Infineon Technologies Ag

08/18/16 / #20160240642

Semiconductor devices and a method for forming a semiconductor device

Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. ... Infineon Technologies Ag

08/18/16 / #20160240628

Electrical device and method for manufacturing same

A method for manufacturing an electrical device is disclosed. In an embodiment, the method includes providing a first layer of a first conductivity type, providing an intrinsic layer onto the first layer, providing one or more trenches into the intrinsic layer, filling the one or more trenches with a material of a second conductivity type opposite to the first conductivity type, and providing a second layer of a second conductivity type onto the intrinsic layer.. ... Infineon Technologies Ag

08/18/16 / #20160240495

Integrated antennas in wafer level package

A semiconductor module comprises an integrated circuit device, the ic device embedded in a compound material, wherein the compound material at least partially extends lateral to the ic device. The semiconductor module further comprises interconnect structures arranged lateral to the ic device to provide at least one external electrical contact; a patch antenna structure integrated in the semiconductor module and electrically connected to the ic device and a layer interfacing the ic device and the compound, wherein the layer comprises first and second planar metal structures coupled to the ic device, wherein the first planar metal structure is electrically connected to the ic device and the interconnect structures and wherein the second planar metal structure is electrically connected to the ic device and the patch antenna structure.. ... Infineon Technologies Ag

08/18/16 / #20160240449

Method for electrophoretically depositing a film on an electronic assembly

A packaged component and a method for making a packaged component are disclosed. In an embodiment the packaged component includes a component carrier having a component carrier contact and a component disposed on the component carrier, the component having a component contact. ... Infineon Technologies Ag

08/18/16 / #20160240429

Dielectric structures with negative taper and methods of formation thereof

A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. ... Infineon Technologies Ag

08/18/16 / #20160240366

Processing of semiconductor devices

A method of thinning a wafer includes thinning the wafer using a grinding process. The wafer, after the grinding processing, has a first non-uniformity in thickness. ... Infineon Technologies Ag

08/18/16 / #20160239695

Chip card reading arrangement

A chip card reading arrangement is provided including a chip card reading device including a data processing circuit and a reader antenna coupled to the data processing circuit arranged at a surface of the chip card reading device for placing a chip card to communicate with the chip card reading device via the reader antenna. The data processing circuit is configured to process at least one of signals received via the reader antenna and signals to be transmitted via the reader antenna. ... Infineon Technologies Ag

08/18/16 / #20160239039

Dynamically adapting device operations to handle changes in power quality

A system is described that includes a power bus, a power source configured to supply power to the power bus, and a device receiving at least some of the power supplied by the power source. The device is configured to determine a quality level of the power received from the power bus, and perform an operation of the device according to the quality level of the power. ... Infineon Technologies Ag

08/18/16 / #20160238647

System reference with compensation of electrical and mechanical stress and life-time drift effects

Stress compensated systems and methods of compensating for electrical and mechanical stress are discussed. One example system can include a first circuit and a global stress compensation component. ... Infineon Technologies Ag

08/18/16 / #20160238635

Offset voltage compensation

A bridge offset voltage compensation method and circuit having a bridge circuit and a tunnel magnetoresistance (tmr) resistor cascade. The bridge circuit includes a branch circuit. ... Infineon Technologies Ag

08/18/16 / #20160238549

Fluid sensor chip and method for manufacturing the same

A fluid sensor chip includes an isolator substrate including amorphous carbon, an electrical conductor including graphite and an active material including graphene or carbon nanotubes.. . ... Infineon Technologies Ag

08/11/16 / #20160234619

Sound transducer with interdigitated first and second sets of comb fingers

A sound transducer includes a substrate with a cavity with extending from a first surface of the substrate, a body at least partially covering the cavity and being connected to the substrate by at least one resilient hinge, a first set of comb fingers mounted to the substrate, and a second set of comb fingers mounted to the body. The first set of comb fingers and the second set of comb fingers are interdigitated and configured to create an electrostatic force driving the body in a direction perpendicular to the first surface of the substrate. ... Infineon Technologies Ag

08/11/16 / #20160233969

Rf receiver with testing capability

An rf receiver device includes a semiconductor chip in a chip package, and a test signal generator integrated in the chip. The test signal generator generates an rf test signal including first information. ... Infineon Technologies Ag

08/11/16 / #20160233874

Cross-coupled input voltage sampling and driver amplifier flicker noise cancellation in a switched capacitor analog-to-digital converter

A switching component comprises a plurality of switches configured to receive a differential signal at an input and is configured to provide a non-inverted version of the differential signal at an output during a first phase of operation and an inverted version of the differential signal at an output during a second phase of operation. A driver amplifier component is configured to receive the non-inverted version of the differential signal at an input during the first phase of operation and the inverted version of the differential signal at an input during the second phase of operation. ... Infineon Technologies Ag

08/11/16 / #20160233849

Inductively coupled transformer with tunable impedance match network

A packaged rf power transistor includes an rf input lead, a dc gate bias lead, an rf power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the rf input lead, a secondary inductor electrically connected to the gate terminal and to the dc gate bias lead, and a tuning capacitor electrically connected to the rf input lead and physically disconnected from the gate terminal. ... Infineon Technologies Ag

08/11/16 / #20160233836

System and method for a low noise amplifier

An embodiment described herein includes a low noise amplifier (lna) including a plurality of separate input terminals, a plurality of transistors, and an output network coupled to a first reference terminal and a single output of the lna. Each transistor includes a conduction path and a control terminal coupled to one of the plurality of separate input terminals. ... Infineon Technologies Ag

08/11/16 / #20160233330

Gated diode in a press-fit housing and an alternator assembly having a gated diode arranged in a load path

A gated diode in a press-fit housing includes a base configured to be press-fit into an opening of a diode carrier plate and including a pedestal portion with a first flat surface, and a head wire including a head portion with a second flat surface and a wire portion. The base and the head wire form parts of the press-fit housing. ... Infineon Technologies Ag

08/11/16 / #20160233308

Semiconductor device and method for producing same

A semiconductor device includes a semiconductor body, having a first surface, a gate electrode structure, which includes polycrystalline silicon, of an igfet in a first trench extending from the first surface into the semiconductor body. The device also includes a semiconductor element, which is different from the gate electrode structure of the igfet and includes polycrystalline silicon, in a second trench extending from the first surface into the semiconductor body, wherein the polycrystalline silicon of the igfet and of the semiconductor element different therefrom ends below a top side of an insulation layer adjoining the first surface of the semiconductor body.. ... Infineon Technologies Ag

08/11/16 / #20160233295

Sic-based superjunction semiconductor device

A semiconductor device includes a semiconductor body having a semiconductor body material with a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon, at least one first semiconductor region doped with dopants of a first conductivity type and having a columnar shape that extends into the semiconductor body along an extension direction, wherein a respective width of the at least one first semiconductor region continuously increases along the extension direction; and at least one second semiconductor region included in the semiconductor body. The at least one second semiconductor region is arranged adjacent to the at least one first semiconductor region, and is doped with dopants of a second conductivity type complementary to the first conductivity type.. ... Infineon Technologies Ag

08/11/16 / #20160231757

Bias drift compensation

Representative implementations of devices and techniques provide detection of a voltage drift of an electrical component or system. A detection circuit detects the voltage drift based on a comparison of a received signal from a test circuit and a reference voltage. ... Infineon Technologies Ag

08/11/16 / #20160231192

Sensor network supporting self-calibration of pressure sensors

A pressure sensor system comprises one or more self-calibrating pressure sensors for self-calibrating sensor parameters based on a membrane deflection or a membrane displacement from an electrostatic force and a single reference pressure from an additional sensor. The additional sensor has a greater accuracy level or range than the self-calibrating sensor. ... Infineon Technologies Ag

08/04/16 / #20160226525

Method and apparatus for providing a joint error correction code for a combined data frame comprising first data of a first data channel and second data of a second data channel and sensor system

An apparatus (100) for providing an joint error correction code (140) for a combined data frame (254) comprising first data (112) of a first data channel and second data (122) of a second data channel comprises a first error code generator (110) configured to provide, based on a linear code, information on a first error correction code (114a, 114b) using the first data (112). The apparatus further comprises a second error code generator (120) configured to provide, based on the linear code, information on a second error correction code (124) using the second data (122). ... Infineon Technologies Ag

08/04/16 / #20160226477

Method of operating a reverse conducting igbt

According to an embodiment of a method, a semiconductor device is operated in a reverse biased unipolar mode before operating the semiconductor device in an off-state in a forward biased mode the semiconductor device includes at least one floating parasitic region disposed outside a cell region of the device.. . ... Infineon Technologies Ag

08/04/16 / #20160226373

Automatic short led detection for light emitting diode (led) array load

During a start-up phase, each corresponding test current is delivered to a corresponding chain of loads of a plurality of chain of loads. Each chain of loads is coupled between a common node and a corresponding output node. ... Infineon Technologies Ag

08/04/16 / #20160226236

Communicating with power switching devices

In one example, a method includes receiving, by a power switching device and via a connector of the power switching device, a signal that causes the power switching device to transition from a first operating mode to a second operating mode in which the power switching device consumes less current than the first operating mode. In this example, the method also includes, responsive to determining, while the power switching device is in the second operating mode, an occurrence of one or more events, outputting, by the power switching device and via the same connector of the power switching device, a signal that indicates the occurrence of the one or more events.. ... Infineon Technologies Ag

08/04/16 / #20160225932

Method of triggering avalanche breakdown in a semiconductor device

A method of triggering avalanche breakdown in a semiconductor device includes providing an electrical coupling and an optical coupling between an auxiliary semiconductor device configured to emit radiation and the semiconductor device including a pn junction between a first layer of a first conductivity type buried below a surface of a semiconductor body and a doped semiconductor region of a second conductivity type disposed between the surface and the first layer. The electrical and optical coupling includes triggering emission of radiation by the auxiliary semiconductor device and triggering avalanche breakdown in the semiconductor device by absorption of the radiation in the semiconductor device.. ... Infineon Technologies Ag

08/04/16 / #20160225856

Composite wafer having a sic-based functional layer

A composite wafer includes a substrate and a sic-based functional layer. The substrate includes a porous carbon substrate core and an encapsulating layer encapsulating the substrate core. ... Infineon Technologies Ag

08/04/16 / #20160225745

Semiconductor device having a chip under package

A semiconductor device package includes an electronic component and an electrical interconnect. The electronic component is attached to the electrical interconnect. ... Infineon Technologies Ag

08/04/16 / #20160225735

Method for producing a connecting medium on an assembly partner, method for producing a material-fit connection between an assembly partner and a metal layer, and a system for carrying out the methods

A method for producing a layer including a connecting medium on an assembly partner is provided. The method incudes providing a carrier on which the connecting medium is applied. ... Infineon Technologies Ag

08/04/16 / #20160225718

Device including a metallization layer and method of manufacturing a device

A device comprises a base element and a metallization layer over the base element. The metallization layer comprises pores and has a varying degree of porosity, the degree of porosity being higher in a portion adjacent to the base element than in a portion remote from the base element.. ... Infineon Technologies Ag

08/04/16 / #20160225626

Method for producing a semiconductor

A method for producing a semiconductor is disclosed, the method having: providing a semiconductor body having a first side and a second side; forming an n-doped zone in the semiconductor body by a first implantation into the semiconductor body via the first side to a first depth location of the semiconductor body; and forming a p-doped zone in the semiconductor body by a second implantation into the semiconductor body via the second side to a second depth location of the semiconductor body, a pn-junction forming between said n-doped zone and said p-doped zone in the semiconductor body.. . ... Infineon Technologies Ag

08/04/16 / #20160224041

Circuit arrangement and a method for operating a circuit arrangement

According to various embodiments, a circuit arrangement may be provided, comprising a driver circuit configured to deliver a switching signal to a power switch such that the power switch controls a load current, a gate-back regulation circuit selectively connected to the driver circuit and the load current, and a diagnostic circuit configured to provide an enabling signal, which allows the gate-back regulation circuit to become active; and wherein the enabling signal is dependent at least in part on a condition independent of the load current.. . ... Infineon Technologies Ag

08/04/16 / #20160223672

Apparatus for determining distance information, a time of flight light source and a docking station

An apparatus for determining distance information. The apparatus includes a control module configured to control a transmission of a request signal by a transmit module. ... Infineon Technologies Ag

08/04/16 / #20160223610

Sensor system and method

The present disclosure teaches a sensor system comprising at least two sensor elements causing increased reliability of individual sensor signals due to increased diagnostic coverage using diverse signal paths, diverse signal representations of sensor signals, merging of individual sensor signals maintaining independence of individual sensor signals comprised in protocol representations thereof.. . ... Infineon Technologies Ag

08/04/16 / #20160223579

System and method for a wind speed meter

According to an embodiment, a method of measuring wind speed includes measuring atmospheric pressure at a first pressure sensor arranged inside a case and shielded from wind, measuring air pressure at a second pressure sensor arranged at an opening in the case, and determining wind speed at the opening in the case based on measuring the atmospheric pressure and the air pressure.. . ... Infineon Technologies Ag

08/04/16 / #20160223370

Sensor bus system and unit with internal event verification

Internal event verification is enabled in sensor bus systems. One example sensor bus system includes a channel master component and one or more channel slave components. ... Infineon Technologies Ag

08/04/16 / #20160223358

Detection of a rotational position of a shaft

An embodiment relates to an angle sensor for detecting a rotational position of a shaft to which a magnetic field arrangement is attached, comprising: a first sensor element, a second sensor element, a support structure, wherein the first sensor element and the second sensor element are mechanically coupled to the support structure, wherein the support structure is arranged to be mechanically connected to a hull, wherein the hull at least partially encloses the shaft.. . ... Infineon Technologies Ag

08/04/16 / #20160221822

System and method for an integrated transducer and temperature sensor

According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface ic coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface ic is electrically coupled to the acoustic transducer and the temperature sensor.. ... Infineon Technologies Ag

08/04/16 / #20160220125

Implantable vessel fluid sensor

An implantable vessel fluid sensor is configured to sense at least one vessel fluid parameter of a vessel. The implantable vessel fluid sensor includes a tubular body having a first end portion. ... Infineon Technologies Ag

07/28/16 / #20160219705

Power semiconductor module arrangement

A power semiconductor module arrangement includes a semiconductor module having a controllable power semiconductor component, a first printed circuit board (pcb) arranged outside the semiconductor module, and a control unit arranged outside the semiconductor module and having a second pcb. The control unit is configured to control the controllable power semiconductor component. ... Infineon Technologies Ag

07/28/16 / #20160218828

Sensor interface that provides a long package crc to improve functional safety

A data transmission system comprising an automotive sensor network system (asns) connected to a plurality of source locations via a common bus, wherein the asns is configured to ascertain the source from which the data-frames and first package checksum are received and based on the ascertainment of the source, appropriate decoding methods are used to calculate the asns location data-frame checksums and the asns location package checksums. A higher order redundancy check is done over a series of data-frames to detect errors in the reception caused by temporary high interference that may exist in the transmission path.. ... Infineon Technologies Ag

07/28/16 / #20160218749

Walsh encoding for peripheral sensor interface 5

A sensor may encode data using a first encoding scheme. The first encoding scheme may include encoding a data bit, included in the data, using a first chip sequence that corresponds to a first set of current levels. ... Infineon Technologies Ag

07/28/16 / #20160218711

Sensor signal transmission

A speed sensor including an output data signal generator configured to generate an output data signal representing a state of a sensed element; and a multiplexer configured to multiplex the output data signal and an internal diagnostic data signal representing diagnostic data of the speed sensor into a combined data signal.. . ... Infineon Technologies Ag

07/28/16 / #20160218524

Circuit arrangement having charge storage units

A circuit arrangement includes a power semiconductor circuit, a first charge storage unit and a second charge storage unit. The first charge storage unit has first and second terminals, the second charge storage unit has first and second terminals, and the power semiconductor circuit has first and second terminals. ... Infineon Technologies Ag

07/28/16 / #20160218080

Method of thinning and packaging a semiconductor chip

A semiconductor wafer and a plurality of semiconductor dies are provided. The wafer and the dies each include first electrically conductive terminals arranged on a main surface. ... Infineon Technologies Ag

07/28/16 / #20160218044

Device comprising a ductile layer and method of making the same

Device comprising a ductile layer, a method for making a component comprising a ductile layer and a method for testing a component are disclosed. An embodiment includes an electronic device including a first conductive layer, a ductile layer and a brittle layer between the first conductive layer and the ductile layer.. ... Infineon Technologies Ag

07/28/16 / #20160218039

Method for handling a product substrate, a bonded substrate system and a temporary adhesive

A method for handling a product substrate includes bonding a carrier to the product substrate. A layer of a permanent adhesive is applied onto a surface of the carrier. ... Infineon Technologies Ag

07/28/16 / #20160218033

Intermediate layer for copper structuring and methods of formation thereof

A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. ... Infineon Technologies Ag

07/28/16 / #20160217894

Rotary encoder with shielded magnet

A magnetic set-up for use in a rotary encoder is disclosed. The set-up includes a permanent magnet arrangement including at least one permanent magnet, which is rotatable with respect to a rotation axis, and a soft magnetic sleeve encompassing the rotation axis and thus the permanent magnet arrangement for shielding against external magnetic fields. ... Infineon Technologies Ag

07/28/16 / #20160216342

Sensor arrangement, circuit arrangement and method of manufacturing a sensor arrangement

A sensor arrangement is provided. The sensor arrangement may include at least one sensor element having a first side and a second side opposite the first side and configured for sensing a magnetic field; and an electrically conductive line, wherein a first portion of the electrically conductive line may be arranged on the first side of the at least one sensor element and a second portion of the electrically conductive line may be arranged on the second side of the at least one sensor element in such a way that if a current is flowing through the electrically conductive line, the current has a first direction in the first portion and a second direction opposite the first direction in the second portion, such that a first magnetic field formed by the current in the first portion and a second magnetic field formed by the current in the second portion may at least partly add constructively at a sensing portion of the at least one sensor element.. ... Infineon Technologies Ag

07/21/16 / #20160211837

Asynchronous output protocol

An apparatus and corresponding method for outputting a protocol pulse based on a speed signal representing speed of an object. The apparatus includes a zero-crossing circuit, and a delay circuit. ... Infineon Technologies Ag

07/21/16 / #20160211660

Semiconductor device with surge current protection

A power device includes an active area having at least two switchable regions with different threshold voltages.. . ... Infineon Technologies Ag

07/21/16 / #20160211336

Semiconductor device with a semiconductor body containing hydrogen-related donors

A semiconductor device includes a semiconductor body with parallel first and second surfaces and containing hydrogen-related donors. A concentration profile of the hydrogen-related donors vertical to the first surface includes a maximum value of at least 1e15 cm−3 at a first distance to the first surface and does not fall below 1e14 cm−3 over at least 60% of an interval between the first surface and the first distance.. ... Infineon Technologies Ag

07/21/16 / #20160211250

Semiconductor substrate arrangement, a semiconductor device, and a method for processing a semiconductor substrate

According to various embodiments, a semiconductor substrate arrangement may be provided, wherein the semiconductor substrate arrangement may include: a semiconductor substrate defining a first area at a first level and a second area next to the first area at a second level, wherein the first level is lower than the second level; a plurality of planar non-volatile memory structures disposed over the semiconductor substrate in the first area; and a plurality of planar transistor structures disposed over the semiconductor substrate in the second area.. . ... Infineon Technologies Ag

07/21/16 / #20160211227

Semiconductor device including a protection structure

A device includes a semiconductor chip including a dicing edge. The device further includes an active structure arranged in a semiconductor material of the semiconductor chip, and a protection structure arranged between the dicing edge and the active structure.. ... Infineon Technologies Ag

07/21/16 / #20160211226

Integrated circuit and method of manufacturing an integrated circuit

In various embodiments, an integrated circuit is provided. The integrated circuit may include a semiconductor chip and an electrically conductive composite material fixed to the semiconductor chip, wherein the electrically conductive composite material may include a metal, and wherein a coefficient of thermal expansion (cte) value of the electrically conductive composite material may be lower than the cte value of the metal.. ... Infineon Technologies Ag

07/21/16 / #20160211189

Chip carrier laminate with high frequency dielectric and thermomechanical buffer

A chip carrier for carrying an encapsulated electronic chip, wherein the chip carrier comprises a laminate structure formed as a stack of a plurality of electrically insulating structures and a plurality of electrically conductive structures, and a chip coupling area at an exposed surface of the laminate structure being configured for electrically and mechanically coupling the encapsulated electronic chip, wherein one of the electrically insulating structures is configured as high frequency dielectric made of a material being compatible with low-loss transmission of a high-frequency signal, and wherein at least one of another one of the electrically insulating structures and one of the electrically conductive structures is configured as a thermomechanical buffer for buffering thermally induced mechanical load.. . ... Infineon Technologies Ag

07/21/16 / #20160211179

Method of processing a semiconductor substrate and semiconductor chip

A method of processing a semiconductor substrate is provided. The method may include forming a film over a first side of a semiconductor substrate, forming at least one separation region in the semiconductor substrate between a first region and a second region of the semiconductor substrate, arranging the semiconductor substrate on a breaking device, wherein the breaking device comprises a breaking edge, and wherein the semiconductor substrate is arranged with the film facing the breaking device and in at least one alignment position with the at least one separation region aligned with the breaking edge, and forcing the semiconductor substrate to bend the first region with respect to the second region over the breaking edge until the film separates between the breaking edge and the at least one separation region.. ... Infineon Technologies Ag

07/21/16 / #20160211178

Method of dicing a wafer and semiconductor chip

A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, the separation regions being free from metal, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. ... Infineon Technologies Ag

07/21/16 / #20160211158

Tank switch and method of monitoring a fluid rate

A tank switch for a semiconductor test system is provided, wherein the tank switch comprises a manifold comprising a first input pipe, a second input pipe, an output pipe and an flow sensor, wherein each of the input pipes is configured to be connected to a respective fluid tank and the output pipe comprises an output terminal which is configured to be connected to a testing handler, wherein each of the input pipes comprises a respective control valve; wherein the flow sensor is built into the manifold before the output terminal and is configured to provide a measurement signal indicative of the flow rate of a fluid through output terminal and to send the signal to a control unit; and wherein each of the control valves is configured to receive a control signal and to be opened or closed responsive to the received control signal.. . ... Infineon Technologies Ag

07/21/16 / #20160211140

Method for processing a semiconductor surface

A method for processing a semiconductor includes irradiating a surface of a semiconductor with ions of a first gas type for cleaning the surface and implanting of ions of a second gas type in a region below the surface of the semiconductor for creating defects in the region below the surface. The irradiating and the implanting are performed within the same chamber.. ... Infineon Technologies Ag

07/21/16 / #20160209479

Current sensor positioning error correction using auxiliary hall cells

A current sensor may comprise a first hall cell, a second hall cell, a third hall cell, a fourth hall cell, and a fifth hall cell to a set of magnetic field values associated with a magnetic field generated by a current passing through a current rail. The second hall cell may be positioned at a first distance from the first hall cell, and the third hall cell may be positioned at a second distance from the first hall cell such that the third hall cell is positioned between the first hall cell and the second hall cell. ... Infineon Technologies Ag

07/14/16 / #20160204784

System and method for synchronizing multiple oscillators using reduced frequency signaling

An embodiment method for voltage-controlled oscillator (vco) control includes detecting a first vco output signal of a first vco. The first vco output signal has a first vco output frequency. ... Infineon Technologies Ag

07/14/16 / #20160204776

Protected switching element

A circuit is suggested comprising an electronic switching element, a logic unit coupled to control the electronic switching element, and a counter unit coupled to the logic unit, wherein the counter unit comprises a counter and an internal power supply.. . ... Infineon Technologies Ag

07/14/16 / #20160204740

System and method for a voltage controlled oscillator

In accordance with an embodiment, a voltage controlled oscillator (vco) includes a vco core having a plurality of transistors and a varactor circuit that has a first end coupled to emitter terminals of the vco core and a second end coupled to a tuning terminal. The varactor circuit includes a capacitance that increases with increasing voltage applied to the tuning terminal with respect to the emitter terminals of the vco core.. ... Infineon Technologies Ag

07/14/16 / #20160204602

Device comprising chip and integrated circuit

A device includes a chip and integrated circuit. Devices and integrated circuits are provided where a resistor is coupled to a terminal of a chip or integrated circuit.. ... Infineon Technologies Ag

07/14/16 / #20160204593

Power switch device

Devices and methods comprising a switch and an overload detection are disclosed. When an overload detection is detected, a first retry scheme followed by a second retry scheme different from the first retry scheme may be applied. ... Infineon Technologies Ag

07/14/16 / #20160204097

Semiconductor device having overload current carrying capability

A semiconductor device includes a semiconductor region having charge carriers of a first conductivity type, a transistor cell in the semiconductor region, and a semiconductor channel region in the transistor cell and having a first doping concentration of charge carriers of a second conductivity type. A semiconductor auxiliary region in the semiconductor region has a second doping concentration of charge carriers of the second conductivity type, which is at least 30% higher than the first doping concentration. ... Infineon Technologies Ag

07/14/16 / #20160204075

Semiconductor chip and method of processing a semiconductor chip

Various embodiments provide a semiconductor chip, wherein the semiconductor chip comprises a first contact area and a second contact area both formed at a frontside of the semiconductor chip; a passivation layer arranged at the frontside between the first contact area and the second contact area; and a contact stack formed over the frontside of the semiconductor chip and comprising a plurality of layers, wherein at least one layer of the plurality of layers is removed from the passivation layer and boundary regions of the contact areas being adjacent to the passivation layer and wherein at least one another layer of the plurality of different layer is present in the boundary region of the contact areas adjoining the passivation layer.. . ... Infineon Technologies Ag

07/14/16 / #20160203977

Semiconductor arrangement including buried anodic oxide and manufacturing method

In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide structure is formed at a bottom side of the first trench by immersing the semiconductor body in an electrolyte and applying an anodizing voltage between the semiconductor body and an electrode in contact with the electrolyte.. ... Infineon Technologies Ag

07/14/16 / #20160202328

Magnetic field strength and magnetic field angle detection system in magnetoresistive sensors

Embodiments relate to magnetoresistive sensors suitable for both angle and field strength sensing. In an embodiment, a sensor comprises two different magnetoresistive (xmr) sensor components for sensing two different aspects or characteristics of a magnetic field. ... Infineon Technologies Ag

07/14/16 / #20160202086

Magnetic field sensor and magnetic field sensing method

A magnetic field sensor includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component, and at least one amr sensor element configured to sense a second magnetic field component which is perpendicular to the first magnetic field component.. . ... Infineon Technologies Ag

07/14/16 / #20160200567

Sensor structure for sensing pressure waves and ambient pressure

In various embodiments, a sensor structure is provided. The sensor structure may include a first conductive layer; an electrode element; and a second conductive layer arranged on an opposite side of the electrode element from the first conductive layer. ... Infineon Technologies Ag

07/07/16 / #20160197484

Sensor with switching matrix switch

A sensor comprises a matrix switch that includes a number of switching elements configured in a matrix configuration. The sensor comprises one or more sensor elements configured in a sensor matrix configuration. ... Infineon Technologies Ag

07/07/16 / #20160197164

Method of producing a semiconductor arrangement

A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. ... Infineon Technologies Ag

07/07/16 / #20160197070

Semiconductor device having contact trenches extending from opposite sides of a semiconductor body

A semiconductor device includes a semiconductor body having first and second opposing sides. Contact trenches extend, from the first and second sides, through a dielectric and into the semiconductor body. ... Infineon Technologies Ag

07/07/16 / #20160197009

Device and method for stopping an etching process

A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. ... Infineon Technologies Ag

07/07/16 / #20160196989

Baseplate for an electronic module and method of manufacturing the same

Various embodiments provide methods for manufacturing a baseplate for an electronic module and an electronic module comprising a baseplate, wherein the baseplate comprises a conductive material; and a recess formed in one main surface of the baseplate and being adapted to accommodate an electronic chip.. . ... Infineon Technologies Ag

07/07/16 / #20160196230

System and method for a low emission network

According to various embodiments, a method of operating a two-wire digital bus includes applying a bias voltage to the two-wire digital bus at a first interface node, measuring a common mode voltage of the two-wire digital bus at the first interface node, and adjusting the bias voltage at the first interface node based on the measured common mode voltage.. . ... Infineon Technologies Ag

07/07/16 / #20160195592

Intelligent field shaping for magnetic speed sensors

The present disclosure provides for techniques to improve the sensitivity of magnetic sensor systems. One embodiment of a magnetic sensor system includes a magnetic biasing body comprised of a hard magnetic material and including a recess therein. ... Infineon Technologies Ag

06/16/16 / #20160173133

Method and data processing device for determining an error vector in a data word

In various embodiments, a method for determining an error vector in a data word is provided. The method includes determining the syndrome of the error vector, successively generating code words by cyclically interchanging one or more predefined code words, forming, for each code word generated, the sum of the syndrome supplemented with zeros to the data word length and the code word, and checking, for the code word, whether the sum of the syndrome supplemented with zeros to the data word length and the code word has a minimum weight among all code words, and determining the error vector as the sum of the syndrome and the code word for which the sum of the syndrome supplemented with zeros to the data word length and the code word has a minimum weight among all code words.. ... Infineon Technologies Ag

06/16/16 / #20160173088

Integrated hall-controlled switch devices

Embodiments relate to hall-controlled switch devices. In an embodiment, a hall switch and a load switch are integrated in a single integrated circuit device. ... Infineon Technologies Ag

06/16/16 / #20160172849

Esd/eos detection

Representative implementations of devices and techniques provide detection of an electrical stress event for an electrical component or system. A detection component may be located near the electrical component or system and be arranged to determine the existence of the electrical stress event. ... Infineon Technologies Ag

06/16/16 / #20160172468

Method of forming a silicon-carbide device with a shielded gate

A silicon-carbide semiconductor substrate having a plurality of first doped regions being laterally spaced apart from one another and beneath a main surface, and a second doped region extending from the main surface to a third doped region that is above the first doped regions is formed. Fourth doped regions extending from the main surface to the first doped regions are formed. ... Infineon Technologies Ag

06/16/16 / #20160172438

Method of manufacturing semiconductor devices using light ion implantation and semiconductor device

A first doped region is formed in a single crystalline semiconductor substrate. Light ions are implanted through a process surface into the semiconductor substrate to generate crystal lattice vacancies between the first doped region and the process surface, wherein a main beam axis of an implant beam used for implanting the light ions deviates by at most 1.5 degree from a main crystal direction along which channeling of the light ions occurs. ... Infineon Technologies Ag

06/16/16 / #20160172352

Power semiconductor device with improved stability and method for producing the same

A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. ... Infineon Technologies Ag

06/16/16 / #20160172276

Bonding clip, carrier and method of manufacturing a bonding clip

Various embodiments provide a clip for clip bonding of a die to a carrier (bonding clip), wherein the clip comprises a clip body comprising a first region configured to be fixed on a carrier and a second region configured to be fixed to a die, wherein at least one of the first region and the second region comprises a guiding structure configured to guide the clip when connecting the carrier and the die.. . ... Infineon Technologies Ag

06/16/16 / #20160172029

Nonvolitile memory refresh

A system and method of refreshing a nonvolatile memory having memory cells. The method includes identifying one or more of the memory cells that do not satisfy a data retention test; remapping the one or more identified memory cells from original memory addresses to spare memory addresses; and refreshing the identified memory cells.. ... Infineon Technologies Ag

06/16/16 / #20160170010

Method and device for radar applications

A device for radar applications includes a computing engine, a radar acquisition unit connected to the computing engine, a timer unit connected to the computing engine, a cascade input port, and a cascade output port. The cascade input port is configured to convey an input signal to the computing engine and the cascade output port is configured to convey an output signal from the computing engine. ... Infineon Technologies Ag

06/16/16 / #20160169984

Magnetic field sensor

A bias magnetic field sensor is disclosed. In an embodiment, a bias magnetic field sensor includes a magnetic field sensor package having a magnetic body attached to only a single side of the sensor package, wherein the magnetic body is configured to provide a magnetic field, and wherein the sensor package is configured to measure a modulation of the magnetic field by a generator object.. ... Infineon Technologies Ag

06/16/16 / #20160169763

Pressure sensor module having a sensor chip and passive devices within a housing

A pressure sensor module including a housing, a pressure sensor chip, and one or more of an integrated passive device (idp) chip and discrete passive devices are disclosed. The pressure sensor chip and one or more of the ipd chip and the discrete passive devices are arranged within the housing.. ... Infineon Technologies Ag

06/16/16 / #20160168739

Electrolyte, method of forming a copper layer and method of forming a chip

An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° c., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. ... Infineon Technologies Ag

06/16/16 / #20160167947

Microphone module and method of manufacturing thereof

A microphone module includes a package including a semiconductor chip and having a recess on an upper surface and a micro-electro-mechanical microphone being electrically connected to the package. Further, the micro-electro-mechanical microphone is arranged on the upper surface of the package. ... Infineon Technologies Ag

06/09/16 / #20160164279

Circuit and method for measuring a current

Circuits, switches with over-current protection and methods for measuring a current are described herein. A circuit configured to provide a current from a supply voltage to a load includes a first transistor, a second transistor, and a detecting circuit. ... Infineon Technologies Ag

06/09/16 / #20160163852

Semiconductor device with a trench electrode

A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and drift regions; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the trench bottom; a gate electrode in the trench and dielectrically insulated from the source, body, diode and drift regions by a gate dielectric; a further trench extending from a first surface of the semiconductor body into the semiconductor body; a source electrode arranged in the further trench adjoining the source and diode regions. ... Infineon Technologies Ag

06/09/16 / #20160163689

Semiconductor devices with transistor cells and thermoresistive element

A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. ... Infineon Technologies Ag

06/09/16 / #20160163674

Method of packaging integrated circuits

Integrated circuits are packaged by placing a plurality of semiconductor dies on a support substrate, each one of the semiconductor dies having a plurality of terminals at a side facing the support substrate and covering the semiconductor dies with a molding compound to form a molded structure. The support substrate is then removed from the molded structure to expose the side of the semiconductor dies with the terminals, and a metal redistribution layer is formed on the molded structure and in direct contact with the terminals of the semiconductor dies and the molding compound. ... Infineon Technologies Ag

06/09/16 / #20160163616

Heat spreader, electronic module comprising a heat spreader and method of fabrication thereof

An electronic module includes a semiconductor package, a heat spreader attached to the semiconductor package and an electrically insulating layer disposed on the heat spreader remote from the semiconductor package.. . ... Infineon Technologies Ag

06/09/16 / #20160163387

Reuse of electrical charge at a semiconductor memory device

A semiconductor memory device having a plurality of decoders, wherein each decoder is assigned to a select line, wherein no other decoder is assigned to the select line, each decoder has an output configured to charge the select line to when the decoder is activated and to discharge the select line when said decoder is deactivated. Also, each decoder is configured such that, in case that a first decoder gets deactivated after being activated and a second decoder of the decoders gets activated after being deactivated, the output of the first decoder and the output of the second decoder get connected to a common node for a predefined time interval, so that an electrical charge may be transferred from the select line, to the first decoder is assigned to, to the select line, to which the second decoder is assigned to, before the output of the first decoder gets connected to a reference voltage and the output of the second decoder gets connected to a supply voltage.. ... Infineon Technologies Ag

06/09/16 / #20160162881

Processing data on smartcard

An example relates to a method for processing data an on smartcard comprising: (i) obtaining a message; (ii) searching for a rule in at least one file of the smartcard based on the message; and (iii) in case the rule was found, executing the rule.. . ... Infineon Technologies Ag

06/09/16 / #20160161574

Soft switching of magnetization in a magnetoresistive sensor

A magnetoresistive sensor may include a stripe portion comprising magnetoresistive material. The stripe portion may have a stripe width extending along a first axis from a first stripe edge of the stripe portion to a second stripe edge of the stripe portion, a length along a second axis that is substantially perpendicular to the first axis, a first end, and a second end. ... Infineon Technologies Ag

06/02/16 / #20160157036

Microphone configuration and calibration via supply interface

A microphone or a microphone sensor system operates with a sensor interface that receives a supply voltage at a supply terminal. The sensor interface detects a command at the supply terminal based on a change in the supply voltage and communicates the command or data related to the command to a component of the sensor system. ... Infineon Technologies Ag

06/02/16 / #20160156420

Access control devices and a transceiver device

An access control device includes a time of flight circuit configured to determine a distance information related to a distance between the access control device and a peripheral device. The access control device further includes a control module configured to control a transmission of a modulated light transmit signal by the time of flight circuit to the peripheral device. ... Infineon Technologies Ag

06/02/16 / #20160156419

Transceiver device, access control devices, a transmitter device and a receiver device

A transceiver device includes a time of flight circuit configured to emit a modulated light transmit signal and to receive a modulated light receive signal. The transceiver device includes a control module configured to control a transmission of a modulated light transmit signal by the time of flight circuit to an access control device. ... Infineon Technologies Ag

06/02/16 / #20160156365

Sensor system using multiple modes for analog to digital conversion

A device for converting analog to digital is disclosed. The device includes a dual mode converter and a control unit. ... Infineon Technologies Ag

06/02/16 / #20160156085

Active quasi circulator

An rf quasi circulator circuit is described herein. In accordance with one example of the disclosure the circuit includes a receive port, a transmit port and an antenna port as well as a differential amplifier stage having a first input, a second input and an output that is coupled to the receive port. ... Infineon Technologies Ag

06/02/16 / #20160155861

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.. . ... Infineon Technologies Ag

06/02/16 / #20160155735

Semiconductor component including a short-circuit structure

A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. ... Infineon Technologies Ag

06/02/16 / #20160155714

Semiconductor device, a power semiconductor device, and a method for processing a semiconductor device

According to various embodiments, a semiconductor device may include: a layer stack formed at a surface of the semiconductor device, the layer stack including: a metallization layer including a first metal or metal alloy; a protection layer covering the metallization layer, the protection layer including a second metal or metal alloy, wherein the second metal or metal alloy is less noble than the first metal or metal alloy.. . ... Infineon Technologies Ag

06/02/16 / #20160155712

Semiconductor chip

According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.. . ... Infineon Technologies Ag

06/02/16 / #20160155680

Semiconductor package and method of fabrication thereof

A semiconductor package includes a semiconductor chip having a first main face and side faces, an encapsulation covering at least the side faces of the semiconductor chip, and an electrical redistribution structure arranged over the first main face of the semiconductor chip. A first main surface of the semiconductor package includes a surface of the electrical redistribution structure and a surface of the encapsulation.. ... Infineon Technologies Ag

06/02/16 / #20160155164

System and methods for order promising using atp aggregation

Systems and methods relate to managing production data for supply chain and manufacturing processes in an available-to-promise (atp) context. In fulfilling customer or atp product requests, systems and methods can apply rules to consider flexibilities in the supply chain and manufacturing processes. ... Infineon Technologies Ag

06/02/16 / #20160154415

Dual mode low-dropout linear regulator

In one example, a method includes operating an ldo regulator system in one of a voltage regulation mode or a power balancing mode. The method further includes comparing one or more respective reference voltages to one or more respective feedback voltages to determine a change in amount of current that needs to be delivered by the ldo regulator system, wherein a first reference voltage is across a reference resistor and a first feedback voltage is across a shunt resistor, and in response to the change in the amount of current that needs to be delivered by the ldo regulator system, adjusting an amount of current flowing through a transistor to maintain a load at a constant output voltage level. ... Infineon Technologies Ag

06/02/16 / #20160153907

Photonic crystal sensor structure and a method for manufacturing the same

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate, an optical source, an optical detector, a plurality of optical cavities in the substrate or in a layer structure over the substrate, where the plurality of optical cavities may be arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector.. ... Infineon Technologies Ag

05/26/16 / #20160149702

Communication arrangement and method for generating a cryptographic key

In various embodiments, a communication arrangement is provided. The communication arrangement includes a first communication device, and a second communication device. ... Infineon Technologies Ag

05/26/16 / #20160149529

Generator excitation regulation using pulse width modulation

A system may be configured to provide a regulated generator field current to a generator to acquire a regulated output voltage of the generator. In one example, the system comprises a controller configured to provide an actuator control signal on the basis of an error signal, an actuator configured to provide on the basis of the actuator control signal a pulse-width modulated output voltage that is configured to drive the regulated generator field current into the generator, the pulse-width modulated output signal having a duty cycle controlled by the actuator control signal, and an error evaluator configured to provide the error signal based on a combination of a first deviation signal and a second deviation signal.. ... Infineon Technologies Ag

05/26/16 / #20160149021

Vertically integrated semiconductor device and manufacturing method

A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer.. . ... Infineon Technologies Ag

05/26/16 / #20160148925

Smart semiconductor switch

A semiconductor device may comprise a semiconductor substrate, which is doped with dopants of a first doping type and includes a semiconductor layer adjoining a top surface of the semiconductor substrate, the semiconductor layer being doped with dopants of a second doping type; a mos transistor being integrated in the first semiconductor region; and a protection circuit electrically connected to a portion of the first semiconductor layer and the gate electrode and being configured to charge the gate electrode dependent on a current passing from the first semiconductor layer to a drain electrode of the mos transistor.. . ... Infineon Technologies Ag

05/26/16 / #20160148836

Vias and methods of formation thereof

In accordance with an embodiment of the present invention, a semiconductor device includes a first metal line in a first insulating layer, and a via having a portion surrounding a portion of a first sidewall of the first metal line.. . ... Infineon Technologies Ag

05/26/16 / #20160148819

Method for producing a material-bonding connection between a semiconductor chip and a metal layer

A method for producing a material-bonding connection between a semiconductor chip and a metal layer is disclosed. For this purpose, a semiconductor chip, a metal layer, which has a chip mounting portion, and also a bonding medium containing a metal powder are provided. ... Infineon Technologies Ag

05/26/16 / #20160148681

Parallel forming of memory cells

A method of parallel forming of memory cells, and an apparatus including a memory and a multiplexer. The memory has an array of memory cells and bit lines, wherein each of the bit lines is associated with a plurality of the memory cells. ... Infineon Technologies Ag

05/26/16 / #20160144674

Rfid-tag, a tpms device, a tire, a receiver device and a method for providing information related to identification of a tire

Embodiments relate to a radio frequency identification (rfid)-tag, a tire pressure monitoring system (tpms) device, a tire, a receiver device and a method for providing information related to identification of a tire. The rfid-tag is configured to provide information related to the tire identification and it is configured to be powered by the tpms device. ... Infineon Technologies Ag

05/26/16 / #20160144544

Ejector pin and method manufacturing the same

Various embodiments provide an ejector pin for a mold, wherein the ejector pin comprises a pin shaft comprising a pinhead at one end and a butting region at the opposite end of the pin shaft, wherein a circumferential groove formed in the pin shaft in the butting region.. . ... Infineon Technologies Ag

05/19/16 / #20160142080

Receiver, sender, method for retrieving an additional datum from a signal and method for transmitting a datum and an additional datum in a signal

A receiver includes a receiver circuit to receive a first transition in a first direction, a second transition in a second direction after the first transition and a third transition in the first transition after the second transition of a signal, in which a first time period between the first and third transitions is at least partially indicating a datum to be received. The receiver circuit is configured to determine a second time period between the first transition and a second transition and to determine an additional datum to be received based at least on the determined second time period between the first and second transitions.. ... Infineon Technologies Ag

05/19/16 / #20160142071

Receiver, transmitter, method for determining a value encoded in a pwm signal, and method for transmitting a value encoded in a pwm signal

A receiver includes a receiver circuit to receive a pulse width modulated signal, which assumes a first signal level, a second signal level and an intermediate signal level between the first signal level and the second signal level. The receiver further includes a quantization circuit to determine a value encoded in the signal based on an intermediate time period between a first transition and an intermediate transition and based on a main time period between the first transition and a second transition. ... Infineon Technologies Ag

05/19/16 / #20160142043

Output driver

In one example, a method includes, in response to a voltage level of an input signal satisfying an input voltage threshold, activating a first driver of a plurality of drivers configured to collectively generate an output signal. In this example, the method also include, in response to the voltage level of the input signal satisfying the input voltage threshold and a voltage level of the output signal satisfying an output voltage threshold, toggling activation of a second driver of the plurality of drivers, wherein the second driver is configured to switch more current when activated than the first driver, and wherein the first driver has a faster slew rate than the second driver.. ... Infineon Technologies Ag

05/19/16 / #20160141770

Electrical connection module, semiconductor module and method for producing a semiconductor module

An electrical connection module system includes a first connection plate with a first connection end and at least one first foot section, a first screw nut, and a dielectric holder. The dielectric holder has a first reception region for receiving the first screw nut. ... Infineon Technologies Ag

05/19/16 / #20160141410

Semiconductor component with dynamic behavior

One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.. ... Infineon Technologies Ag

05/19/16 / #20160141406

Semiconductor to metal transition

A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. ... Infineon Technologies Ag

05/19/16 / #20160141403

Semiconductor device and insulated gate bipolar transistor with transistor cells and sensor cell

A transistor cell region of a semiconductor device includes transistor cells that are electrically connected to a first load electrode. An idle region includes a gate wiring structure that is electrically connected to gate electrodes of the transistor cells. ... Infineon Technologies Ag

05/19/16 / #20160141399

Method for forming a semiconductor device and a semiconductor device

A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.. ... Infineon Technologies Ag

05/19/16 / #20160141259

Method of forming a bondpad and bondpad

Various embodiments provide a method of forming a bondpad, wherein the method comprises providing a raw bondpad, and forming a recess structure at a contact surface of the raw bondpad, wherein the recess structure comprises sidewalls being inclined with respect to the contact surface.. . ... Infineon Technologies Ag

05/19/16 / #20160141256

Method for manufacturing a semiconductor device, and semiconductor device

According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.. . ... Infineon Technologies Ag

05/19/16 / #20160141248

Chip card module arrangement, chip card arrangement and method for producing a chip card arrangement

A chip card module arrangement may include a first surface and a second surface, which are opposite from one another, and a chip receptacle for one or more semiconductor chips on the surfaces. The chip card module arrangement may further include a connecting material receiving area on one of the two surfaces, the connecting material receiving area only taking up a portion of the surface.. ... Infineon Technologies Ag

05/19/16 / #20160141208

Method for processing a semiconductor substrate and a method for processing a semiconductor wafer

According to various embodiments, a method for processing a semiconductor substrate may include: covering a plurality of die regions of the semiconductor substrate with a metal; forming a plurality of dies from the semiconductor substrate, wherein each die of the plurality of dies is covered with the metal; and, subsequently, annealing the metal covering at least one die of the plurality of dies.. . ... Infineon Technologies Ag

05/19/16 / #20160141189

Frame cassette

According to various embodiments, a frame cassette may include: a housing; a mounting structure inserted in the housing, the mounting structure including a plurality of tape-frame slots, wherein each tape-frame slot is configured to receive a tape-frame, wherein the housing includes an opening to introduce a tape-frame into a tape-frame slot of the plurality of tape-frame slots or to remove a tape-frame from a tape-frame slot of the plurality of tape-frame slots, and a door mounted at the housing, wherein the door is configured to close the opening of the housing to seal the interior of the housing from the exterior of the housing.. . ... Infineon Technologies Ag

05/19/16 / #20160141187

Method of manufacturing an integrated circuit with imprint, integrated circuit with imprint, device for forming an integrated circuit with imprint and verification system for an integrated circuit with imprint

According to various embodiments, a method of manufacturing an integrated circuit may include providing a film structure having at least one of at least one recess or at least one protrusion, and carrying out a film assisted molding process using the film structure to mold an electronic circuit, thereby forming a molding structure including a surface pattern in accordance with the film structure.. . ... Infineon Technologies Ag

05/19/16 / #20160140433

Semiconductor device including a radio frequency identification tag

A device includes a semiconductor element and a radio frequency identification (rfid) tag. The rfid tag is configured to provide information about at least one of a property of the device and a property of a manufacturing of the device.. ... Infineon Technologies Ag

05/19/16 / #20160139214

Systems and arrangements of three-contact hall-effect devices and related methods

Embodiments relate to vertical hall effect devices comprising hall effect structures with three contacts in each hall effect region. In one embodiment, the contacts are interconnected with terminals such that the hall effect device has symmetry and nominally identical internal resistances in the absence of externally applied magnetic fields. ... Infineon Technologies Ag

05/19/16 / #20160139077

Apparatus for analyzing ion kinetics in dielectrics

An apparatus for analyzing ion kinetics in a dielectric probe structure includes an ion reservoir abutting the dielectric probe structure and configured to supply mobile ions to the dielectric probe structure, a capacitor structure configured to generate an electric field in the dielectric probe structure along a vertical direction, and an electrode structure configured to generate an electrophoretic force on mobile ions in the dielectric probe structure along a lateral direction. A method for analyzing ion kinetics in the dielectric probe structure of the apparatus is also provided.. ... Infineon Technologies Ag

05/19/16 / #20160138492

Reduced power consumption with sensors transmitting data using current modulation

An engine control system operates to communicate via a sensor link with one or more sensors in a vehicle based on different communication protocols. The sensors alter communication protocols for communicating via the sensor link to an engine control unit to reduce or increase a current consumption according to one or more predetermined criteria. ... Infineon Technologies Ag

05/19/16 / #20160135684

Functional skin patch

A functional skin patch having a first surface and a second surface opposite the first surface is provided. The functional skin patch includes a functional unit having a thermo harvester and an antenna unit. ... Infineon Technologies Ag

05/12/16 / #20160133584

Semiconductor device and an electronic device

According to various embodiments, a semiconductor device may include: a contact pad; a metal clip disposed over the contact pad; and a porous metal layer disposed between the metal clip and the contact pad, the porous metal layer connecting the metal clip and the contact pad with each other.. . ... Infineon Technologies Ag

05/12/16 / #20160133560

Capacitors with barrier dielectric layers, and methods of formation thereof

A device including a first metal feature is disposed in a first insulating layer. A second metal feature is disposed in a second insulating layer and separated from the first metal feature by a portion of a first etch stop liner disposed between the first and the second insulating layers. ... Infineon Technologies Ag

05/12/16 / #20160132091

Digital sensor system

A digital sensor system includes a sensor element, an analog-to-digital converter coupled to the sensor element, and a wake-up circuit configured to activate the sensor element and the analog-to-digital converter in response to a predefined event.. . ... Infineon Technologies Ag

05/12/16 / #20160132069

Circuit carrier, method for producing a circuit carrier, method for producing a circuit arrangement, method for operating a circuit arrangement and method for producing a semiconductor module

A circuit carrier includes a dielectric isolation carrier, an upper metallization layer applied to the dielectric isolation carrier, and a dielectric coating. The upper metallization layer has a metallization section which has an underside facing the isolation carrier, a top side facing away from the isolation carrier, and a side surface closed in a ring-shaped fashion. ... Infineon Technologies Ag

05/12/16 / #20160131696

Unit and method for monitoring an integrity of a signal path, signal processing system and sensor system

A monitoring unit (100; 800) for monitoring an integrity of a signal path (200; 620) configured to receive an input signal (210, 802) and further configured to provide an output (220) in response to the input signal (210, 802), comprises a signal monitor (110; 801) configured to extract a first signal (112; 630) from the signal path (200; 620) corresponding to the input signal (210, 802) in at least a first characteristic. The monitoring unit (100; 800) further comprises a signal interface (120; 803) configured to extract a second signal (122; 631) corresponding to the output (220) in at least a second characteristic from the signal path (200; 620); and an evaluator (130) configured to determine, whether the at least first characteristic of the first signal (112; 630) corresponds to the at least second characteristic of the second signal (122; 631) according to a predefined relation.. ... Infineon Technologies Ag

05/12/16 / #20160130722

Method of manufacturing a silicon ingot and silicon ingot

A method of czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. ... Infineon Technologies Ag

05/12/16 / #20160129736

Wheel localizer, wheel localization device, system, method and computer program for locating a position of a wheel

Embodiments provide a device, a system, a method and a computer program for locating a plurality of positions of a plurality of wheels on a vehicle. The device comprises an input to obtain information related to a position of one wheel from the plurality of wheels, and a detector to obtain information related to rotational frequencies of the one wheel and of at least one other wheel of the plurality of wheels. ... Infineon Technologies Ag

05/05/16 / #20160128145

Second stage calibration in dc/dc led current regulation

A current regulator controller includes a differential amplifier that is arranged to output a current sense signal based on a differential input signal and a first stage trim signal. The current regulator controller also includes a first stage trim circuit that is arranged to provide the first stage trim signal. ... Infineon Technologies Ag

05/05/16 / #20160128139

Single led short detection in multichannel led

A method and circuit are described in which a maximum voltage is determined from among a plurality of series load voltages, where each series load voltage of the plurality of series load voltages is a voltage defined by a corresponding series of n loads of a plurality of series of n loads, where n is an integer greater than one. Also, a minimum voltage may be determined from among the plurality of series load voltages. ... Infineon Technologies Ag

05/05/16 / #20160127157

Common-mode suppressor based on differential transmission line

A common-mode suppressor for eliminating common-mode noise in high frequency differential data transmission systems and an associated method includes a long coiled differential transmission line configured to transfer data between a source and a load. The differential transmission line comprises a first conductive wire and a second conductive wire which are inductively and capacitively coupled and are laterally aligned or vertically aligned with each other. ... Infineon Technologies Ag

05/05/16 / #20160126951

Integrated magnetic field sensor-controlled switch devices

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. ... Infineon Technologies Ag

05/05/16 / #20160126227

Method for attaching a semiconductor die to a carrier

A method for fabricating an electronic device includes providing a first semiconductor chip and a second semiconductor chip. The first semiconductor chip has a first semiconductor die and a first solder interconnect layer applied to a main face of the first semiconductor die. ... Infineon Technologies Ag

05/05/16 / #20160126216

Method of forming an interconnection and arrangement for a direct interconnect chip assembly

Various embodiments provide a method of forming an interconnection between an electric component and an electronic component, wherein the method comprises forming a first interconnection sublayer on an electric component, wherein the first interconnection sublayer comprises a metal and has a main surface opposite to the electric component, wherein the main surface has a first surface roughness; forming a second interconnection sublayer on an electronic component, wherein the second interconnection sublayer comprises the metal and has a surface opposite to the electronic component, wherein the surface has a second surface roughness, wherein the first surface roughness and the second surface roughness are in the same order of magnitude; and interconnecting the first interconnection sublayer and the second interconnection sublayer by contacting the same and applying pressure and heat to the contacted first and second interconnection sublayers.. . ... Infineon Technologies Ag

05/05/16 / #20160126212

Chip assemblage, press pack cell and method for operating a press pack cell

One aspect of the invention relates to a chip assemblage. The latter comprises a number of semiconductor chips, each of which has a semiconductor body having an underside, and also a top side, which is spaced apart from the underside in a vertical direction. ... Infineon Technologies Ag

05/05/16 / #20160126211

Semiconductor arrangement, method for producing a semiconductor chip

A semiconductor assembly is described. In accordance with one example of the invention, the semiconductor assembly comprises a semiconductor body, a top main electrode arranged on a top side, a bottom main electrode arranged on an underside, and a control electrode arranged on the top side. ... Infineon Technologies Ag

05/05/16 / #20160126197

Semiconductor device having a stress-compensated chip electrode

A semiconductor device includes a semiconductor chip having a first main surface and a second main surface. A chip electrode is disposed on the first main surface. ... Infineon Technologies Ag

05/05/16 / #20160126192

Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module

A power semiconductor module includes a direct copper bonded (dcb) substrate having a ceramic substrate, a first copper metallization bonded to a first main surface of the ceramic substrate and a second copper metallization bonded to a second main surface of the ceramic substrate opposite the first main surface. The power semiconductor module further includes a power semiconductor die attached the first copper metallization, a passive component attached the first copper metallization, a first isolation layer encapsulating the power semiconductor die and the passive component, a first structured metallization layer on the first isolation layer, and a first plurality of electrically conductive vias extending through the first isolation layer from the first structured metallization layer to the power semiconductor die and the passive component. ... Infineon Technologies Ag

05/05/16 / #20160126189

Programmable devices and methods of manufacture thereof

Programmable devices, methods of manufacture thereof, and methods of programming devices are disclosed. In one embodiment, a programmable device includes a link and at least one first contact coupled to a first end of the link. ... Infineon Technologies Ag

05/05/16 / #20160126165

Method of connecting a substrate and chip assembly

A method of connecting a substrate is provided, wherein the substrate may include a first main surface and a second main surface opposite the first main surface. The method may include forming at least one protrusion on the first main surface of the substrate, forming a fixing agent over the first main surface of the substrate and over the at least one protrusion; and arranging the substrate on a carrier. ... Infineon Technologies Ag

05/05/16 / #20160126163

Lead frame strip with molding compound channels

A lead frame strip has a plurality of unit lead frames. Each of the unit lead frames has a periphery structure connecting adjacent ones of the unit lead frames, a die paddle inside of the periphery structure, a plurality of leads connected to the periphery structure and extending towards the die paddle, and a molding compound channel in the periphery structure configured to guide liquefied molding material. ... Infineon Technologies Ag

05/05/16 / #20160126154

Power semiconductor module and method for producing a power semiconductor module

A power semiconductor module includes a module housing and a circuit carrier having a dielectric insulation carrier and an upper metallization layer applied onto an upper side of the dielectric insulation carrier. A semiconductor component is arranged on the circuit carrier. ... Infineon Technologies Ag

05/05/16 / #20160126149

Method for processing a substrate and a method of process screening for integrated circuits

According to various embodiments, a method for processing a substrate may include: forming a dielectric layer over the substrate, the dielectric layer may include a plurality of test regions; forming an electrically conductive layer over the dielectric layer to contact the dielectric layer in the plurality of test regions; simultaneously electrically examining the dielectric layer in the plurality of test regions, wherein portions of the electrically conductive layer contacting the dielectric layer in the plurality of test regions are electrically conductively connected with each other by an electrically conductive material; and separating the electrically conductive layer into portions of the electrically conductive layer contacting the dielectric layer in the plurality of test regions from each other.. . ... Infineon Technologies Ag

05/05/16 / #20160124055

Bias circuit for stacked hall devices

Embodiments relate to stacks of hall effect structures, in which the potential at the contacts of each hall effect structure throughout a stack of hall effect structures changes monotonically. An output associated with the hall effect structure in each layer of the stack can be compared against the output of a counterpart hall effect structure in another stack to ascertain the strength of an incident magnetic field.. ... Infineon Technologies Ag

05/05/16 / #20160124039

Edge damage inspection

A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. ... Infineon Technologies Ag

05/05/16 / #20160123808

Spectrometer, method for manufacturing a spectrometer, and method for operating a spectrometer

In various embodiments a spectrometer is provided. The spectrometer may include a first mirror unit which is semitransparent for electromagnetic radiation of at least one wavelength or wavelength range; and a second minor unit having a first area and a second area facing the first minor unit, wherein at least a part of the first area and the second area are spaced apart from the first minor unit, wherein the first area is at least partially reflective for the electromagnetic radiation of at least one wavelength or wavelength range, wherein the second area includes at least a part of a photodetector, and wherein the photodetector is configured to detect the electromagnetic radiation of at least one wavelength or wavelength range.. ... Infineon Technologies Ag

04/28/16 / #20160119006

Receiver and method for receiving a signal

A receiver includes a receiver circuit to receive a pulse width encoded signal and a sampling circuit to determine a position of a transition of the pulse of the signal by oversampling the received signal with respect to a quantization function and to generate a signal indicating an unexpected event, when the determined position of the transition deviates from an expected position according to the quantization function by more than a predetermined range, wherein the quantization function maps a plurality of expected positions to a plurality of values.. . ... Infineon Technologies Ag

04/28/16 / #20160118976

Methods and circuits for improved reliability of power devices operating under repetitive thermal stress

Thermo-migration induced stress in power devices can be mitigated by deactivating a subset of power device components (e.g., transistors, etc.) when the power device experiences a high stress condition. Deactivating the subset of power device components serves to bifurcate the active area of the power switching device into smaller active regions, which advantageously changes the temperature gradients in the active area/regions. ... Infineon Technologies Ag

04/28/16 / #20160118879

Charge pump

Charge-pump devices and corresponding methods are disclosed. A control input of a valve transistor of the charge pump device may be coupled with one of an input terminal or an output terminal via a further transistor.. ... Infineon Technologies Ag

04/28/16 / #20160118484

Bipolar transistor with enclosed sub areas and a method for manufacturing such a bipolar transistor

A bipolar transistor includes a semiconductor structure having an emitter area of a first conductivity type electrically connected to an emitter contact of the bipolar transistor, a base area of a second conductivity type electrically connected to a base contact of the bipolar transistor, and a collector area of the first conductivity type electrically connected to a collector contact of the bipolar transistor. The collector area encloses sub areas of the second conductivity type, or the base area encloses sub areas of the first conductivity type. ... Infineon Technologies Ag

04/28/16 / #20160118477

Method of production of field-effect transistor with local source/drain insulation

A method for fabricating a field-effect transistor with local source/drain insulation. The method includes forming and patterning a gate stack with a gate layer and a gate dielectric on a semiconductor substrate; forming source and drain depressions at the gate stack in the semiconductor substrate; forming a depression insulation layer at least in a bottom region and along the sidewalls of the source and drain depressions; and filling the at least partially insulated source and drain depressions with a filling layer for realizing source and drain regions.. ... Infineon Technologies Ag

04/28/16 / #20160118466

Semiconductor chip arrangement

A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a device region disposed over a first side of the doped substrate region, the device region including at least part of one or more electrical devices; and implanting ions into the doped substrate region to form a gettering region in the doped substrate region of the semiconductor carrier.. . ... Infineon Technologies Ag

04/28/16 / #20160118382

Method of manufacturing a reverse blocking semiconductor device

A reverse blocking semiconductor device is manufactured by introducing impurities of a first conductivity type into a semiconductor substrate of the first conductivity type through a process surface to obtain a process layer extending into the semiconductor substrate up to a first depth, and introducing impurities of a second, complementary conductivity type into the semiconductor substrate through openings of an impurity mask provided on the process surface to obtain emitter zones of the second conductivity type extending up to a second depth deeper than the first depth and channels of the first conductivity type between the emitter zones. Exposed portions of the process layer are removed above the emitter zones.. ... Infineon Technologies Ag

04/28/16 / #20160118211

Communicating with power switching devices

In one example, a method includes receiving, at a first time by a power switching device via an input connector of the power switching device, a signal that causes the power switching device to output a power signal to a load via an output connector of the power switching device. In this example, a voltage level of the power signal satisfies a voltage threshold at a second time that is later than the first time. ... Infineon Technologies Ag

04/28/16 / #20160118141

Method and device for evaluating a chip manufacturing process

A method for evaluating a chip manufacturing process is described comprising measuring, for each of a plurality of chips manufactured in a chip manufacturing process, a bit failure rate of the chip, determining a distribution of bit failure rates from the measured bit failure rates; determining a maximum allowed bit failure rate from a given chip failure rate limit, determining a value representing the probability that a chip manufactured in the chip manufacturing process is below the maximum allowed bit failure rate and determining, based on the value, whether the chip manufacturing process is suitable for the chip failure rate limit.. . ... Infineon Technologies Ag

04/28/16 / #20160116523

Testing of semiconductor packages with integrated antennas

A semiconductor package includes a semiconductor die, an antenna embedded in insulating material contacting a first main side of the semiconductor die and electrically connected to a first pad of the semiconductor die and a coupling structure embedded in the insulating material, electrically connected to a second pad of the semiconductor die and spaced from the antenna. The coupling structure is configured to sense energy radiated from the antenna or a feedline connected to the antenna. ... Infineon Technologies Ag

04/28/16 / #20160116497

Sensor system and alerting unit for sensing and verifying data related to a movement of an object

A sensor system and an alerting unit. The sensor system according to the invention may comprise first sensing element configured to measure a first signal indicative of a velocity of a movement of an object and a second sensing element configured to measure a second signal indicative of a direction of the movement, further comprising an alerting unit configured to issue a warning if a predefined relationship between the first signal and the second signal is being violated. ... Infineon Technologies Ag

04/28/16 / #20160116344

Determining a temperature

A temperature sensor may include at least one cell. Each one of the at least one cell may include a bi-stable flip-flop having a first branch and a second branch. ... Infineon Technologies Ag

04/07/16 / #20160099699

Adjustable impedance matching network

An impedance matching network includes a first terminal, a second terminal, and a reference potential terminal. The impedance matching network further includes a first shunt branch between the first terminal and the reference potential terminal, the first shunt branch including a capacitive element. ... Infineon Technologies Ag

04/07/16 / #20160099680

Oscillator circuit

The disclosure provides an oscillator circuit for a voltage controlled oscillator. The oscillator circuit includes first and second coupled transmission lines, wherein the oscillator circuit is configured to provide a variable load impedance at a first end of a signal line of the first transmission line such that a variable inductance is provided between first and second ends of a signal line of the second transmission line in dependence on the variable load impedance. ... Infineon Technologies Ag

04/07/16 / #20160099405

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A magnetoresistive device includes a substrate and an electrically insulating layer arranged over the substrate. The magnetoresistive device further includes a first free layer embedded in the electrically insulating layer and a second free layer embedded in the electrically insulating layer. ... Infineon Technologies Ag

04/07/16 / #20160099311

Semiconductor structure and a method for processing a carrier

According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.. . ... Infineon Technologies Ag

04/07/16 / #20160099189

Semiconductor packages and modules with integrated ferrite material

A semiconductor package includes a lead frame having a die paddle and a plurality of leads including a gate lead spaced apart from the die paddle. The semiconductor package further includes a semiconductor die attached to the die paddle and having a plurality of pads including a gate pad, a plurality of electrical conductors connecting the pads to the leads, an encapsulant encasing the semiconductor die and a portion of the leads such that part of the leads are not covered by the encapsulant, and a ferrite material embedded in the encapsulant and surrounding a portion of the electrical conductor that connects the gate pad to the gate lead. ... Infineon Technologies Ag

04/07/16 / #20160099188

Semiconductor device with sensor potential in the active region

A semiconductor device includes semiconductor body region and a surface region, the semiconductor body region including a first conductivity type first semiconductor region type and a second conductivity type second semiconductor region. The semiconductor device further includes: a first load contact structure included in the surface region and arranged for feeding a load current into the semiconductor body region; a first trench extending into the semiconductor body region and having a sensor electrode and a first dielectric, the first dielectric electrically insulating the sensor electrode from the second semiconductor region; an electrically conductive path electrically connecting the sensor electrode to the first semiconductor region; a first semiconductor path, wherein the first semiconductor region is electrically coupled to the first load contact structure by at least the first semiconductor path; a sensor contact structure included in the surface region and arranged for receiving an electrical potential of the sensor electrode.. ... Infineon Technologies Ag

04/07/16 / #20160099186

Method for postdoping a semiconductor wafer

A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. ... Infineon Technologies Ag

04/07/16 / #20160098371

Serial peripheral interface daisy chain communication with an in-frame response

In one example, a master device connected in a serial-peripheral interface (spi) daisy chain configuration with a plurality of servant devices, wherein the master device is configured to output a master data output to a first servant data input of a first servant device of a plurality of servant devices, wherein the plurality of servant devices are connected in a serial-peripheral interface (spi) daisy chain configuration with the master device. The master device further configured to receive a master data input from a last servant device of the plurality of servant devices, wherein the master data input comprises an in-frame response of the plurality of servant devices, and wherein the in-frame response is received by the master device in a single spi communication frame.. ... Infineon Technologies Ag

04/07/16 / #20160097827

Xmr-sensor and method for manufacturing the xmr-sensor

An xmr-sensor and method for manufacturing the xmr-sensor are provided. The xmr-sensor includes a substrate, a first contact, a second contact and an xmr-structure. ... Infineon Technologies Ag

04/07/16 / #20160097826

Three 3-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods

A vertical hall effect sensor having three hall effect regions interconnected in a ring can be operated in a spinning scheme. Each hall effect region has three contacts: the first hall effect region includes first, second, and third contacts; the second hall effect region has fourth, fifth, and sixth contacts, and the third hall effect region has seventh, eighth, and ninth contacts. ... Infineon Technologies Ag

04/07/16 / #20160097822

Single led failure detection in a led chain

Methods and circuits are described in which an sls driver circuit includes an sls driver current source that may be arranged to provide an sls current to a series sls chain at a series sls node. The series sls chain may include a plurality of slss connected in series. ... Infineon Technologies Ag

04/07/16 / #20160096726

Mems device and method of making a mems device

A mems device and a method of making a mems device are disclosed. In one embodiment a semiconductor device comprises a substrate, a moveable electrode and a counter electrode, wherein the moveable electrode and the counter electrode are mechanically connected to the substrate. ... Infineon Technologies Ag

03/31/16 / #20160094370

Communication devices

. . Devices, systems and methods are provided where a request may be transmitted based on a first encoding scheme, and a response to the request may be transmitted based on a second encoding scheme different from the first encoding scheme. The second encoding scheme may comprise an edge-based pulse width modulation encoding scheme.. ... Infineon Technologies Ag

03/31/16 / #20160094229

Chip and method for identifying a chip

A chip includes a logic circuit which has a plurality of transistors and is configured to carry out a logical data processing function, the transistors being operated in a first direction when carrying out the data processing function, and a readout circuit which is configured to control the logic circuit in such a manner that the transistors are operated in a second direction opposite the first direction and is configured to determine an identification of the logic circuit on the basis of an output from the logic circuit when operating the transistors in the second direction.. . ... Infineon Technologies Ag

03/31/16 / #20160094216

Drive circuit for reverse-conducting igbts

A drive circuit includes a first output node for connection to the control electrode of the semiconductor switch, a voltage supply circuit, and a first switching stage connected to the voltage supply and a second switching stage connected to the voltage supply. A first resistor network is connected between the first switching stage and the first output node. ... Infineon Technologies Ag

03/31/16 / #20160094212

Clock monitoring for sequential logic circuits

A monitor circuit for monitoring a clock signal is described. In accordance with one example of the disclosure, the monitor circuit includes a pulse generator and a comparator circuit. ... Infineon Technologies Ag

03/31/16 / #20160094194

System and method for adjusting the sensitivity of a capacitive signal source

In accordance with an embodiment, a system for amplifying a signal provided by a capacitive signal source includes an impedance converter having an input node configured to be coupled to a first terminal of the capacitive signal source, and an adjustable capacitive network having a first node configured to be coupled to a second terminal of the capacitive signal source and a second node coupled to an output node of the impedance converter.. . ... Infineon Technologies Ag

03/31/16 / #20160094155

Plate, transducer and methods for making and operating a transducer

A plate, a transducer, a method for making a transducer, and a method for operating a transducer are disclosed. An embodiment comprises a plate comprising a first material layer comprising a first stress, a second material layer arranged beneath the first material layer, the second material layer comprising a second stress, an opening arranged in the first material layer and the second material layer, and an extension extending into opening, wherein the extension comprises a portion of the first material layer and a portion of the second material layer, and wherein the extension is curved away from a top surface of the plate based on a difference in the first stress and the second stress.. ... Infineon Technologies Ag

03/31/16 / #20160093797

Vertical hall device comprising a slot in the hall effect region

A vertical hall device includes a hall effect region, a separator, a first plurality of contacts, and a second plurality of contacts. The hall effect region includes a first straight section, a second straight section that is offset parallel to the first straight section, and a connecting section that connects the first straight section and the second straight section. ... Infineon Technologies Ag

03/31/16 / #20160093731

Method of manufacturing a semiconductor device and semiconductor device

A method of manufacturing a semiconductor device including a transistor comprises forming field plate trenches in a main surface of a semiconductor substrate, a drift zone being defined between adjacent field plate trenches, forming a field dielectric layer in the field plate trenches, thereafter, forming gate trenches in the main surface of the semiconductor substrate, a channel region being defined between adjacent gate trenches, and forming a conductive material in at least some of the field plate trenches and in at least some of the gate trenches. The method further comprising forming a source region and forming a drain region in the main surface of the semiconductor substrate.. ... Infineon Technologies Ag

03/31/16 / #20160093728

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a semiconductor body. The semiconductor body comprises insulated gate field effect transistor cells. ... Infineon Technologies Ag

03/31/16 / #20160093724

Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones

A semiconductor device includes a semiconductor mesa having source zones separated from each other along a longitudinal axis of the semiconductor mesa and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa, at least one of which includes a gate electrode configured to control a charge carrier flow through the at least one body zone. ... Infineon Technologies Ag

03/31/16 / #20160093722

Bipolar transistor

A bipolar transistor comprises a semiconductor body including a collector region and a base region arranged on top of the collector region. The base region has a first crystalline structure and is at least partly doped with dopants of a first doping type. ... Infineon Technologies Ag

03/31/16 / #20160093706

Method of forming a transistor, method of patterning a substrate, and transistor

A method of forming a transistor having a gate electrode includes forming a sacrificial layer over a semiconductor substrate, forming a patterning layer over the sacrificial layer, patterning the patterning layer to form patterned structures, forming spacers adjacent to sidewalls of the patterned structures, removing the patterned structures, etching through the sacrificial layer using the spacers as an etching mask and etching into the semiconductor substrate, thereby forming trenches in the semiconductor substrate, and filling a conductive material in the trenches in the semiconductor substrate to form the gate electrode.. . ... Infineon Technologies Ag

03/31/16 / #20160093500

Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer

According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.. . ... Infineon Technologies Ag

03/31/16 / #20160093347

Reference values for memory cells

It is proposed to determine a reference value on the basis of a plurality of half reference values stored in memory cells, wherein the plurality of half reference values are read from the memory cells, wherein a subset of half reference values is determined from the plurality of half reference values, and wherein the reference value is determined on the basis of the subset of half reference values.. . ... Infineon Technologies Ag

03/31/16 / #20160092378

Processing data

A method for executing a program code is suggested, the method comprising: checking a memory access policy resource based on a trigger; and comparing a current program counter with a program counter information provided by the memory access policy resource and, in case the comparison of the current program counter and the program counter information fulfills a predefined condition, conducting a memory access policy check to allow permitted operations.. . ... Infineon Technologies Ag

03/31/16 / #20160091905

System and method for a power supply

In accordance with an embodiment, a method of controlling a power supply node includes measuring a voltage of the power supply node, determining a first current based on the measuring, determining a first current and a second current based on the measuring, and summing the first current and the second current at the power supply node. Determining the first current includes operating a first controller having a first bandwidth, and determining the second current includes operating a second controller having a second bandwidth greater than the first bandwidth.. ... Infineon Technologies Ag

03/31/16 / #20160090294

Package arrangement, a package, and a method of manufacturing a package arrangement

According to various embodiments, a package arrangement may include: a first encapsulation material; at least one electronic circuit at least partially embedded in the first encapsulation material, the at least one electronic circuit including a first contact pad structure at a first side of the at least one electronic circuit; at least one electromechanical device disposed over the first side of the at least one electronic circuit, the at least one electromechanical device including a second contact pad structure facing the first side of the at least one electronic circuit; a redistribution layer structure between the at least one electromechanical device and the at least one electronic circuit, the redistribution layer structure electrically connecting the first contact pad structure with the second contact pad structure, wherein a gap is provided between the at least one electromechanical device and the redistribution layer structure; a second encapsulation material at least partially covering the at least one electromechanical device, wherein the gap is free of the second encapsulation material.. . ... Infineon Technologies Ag

03/24/16 / #20160087734

Rf receiver with testing capability

An rf receiver device includes a semiconductor chip in a chip package, and a test signal generator integrated in the chip. The test signal generator generates an rf test signal including first information. ... Infineon Technologies Ag

03/24/16 / #20160087672

Sensor device and sensor arrangement

An integrated sensor device (130) according to an embodiment includes a sensing element (140) and a communication interface (150) to communicate with an external control device (110). The communication interface (150) includes a receiver circuit (160) to receive, from the external device, a signal indicating a request to change a transmission mode, and a transmitter circuit (170) to change the transmission mode based on the received signal. ... Infineon Technologies Ag

03/24/16 / #20160087621

Integrated magnetic field sensor-controlled switch devices

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. ... Infineon Technologies Ag

03/24/16 / #20160087606

Packaged mems device and method of calibrating a packaged mems device

A packaged mems device and a method of calibrating a packaged mems device are disclosed. In one embodiment a packaged mems device comprises a carrier, a mems device disposed on the substrate, a signal processing device disposed on the carrier, a validation circuit disposed on the carrier; and an encapsulation disposed on the carrier, wherein the encapsulation encapsulates the mems device, the signal processing device and the memory element.. ... Infineon Technologies Ag

03/24/16 / #20160087005

Semiconductor device with variable resistive element

A semiconductor device includes a semiconductor body including a drift zone that forms a pn junction with an emitter region. A first load electrode is at a front side of the semiconductor body. ... Infineon Technologies Ag

03/24/16 / #20160086876

Electronic component

In an embodiment, an electronic component includes a dielectric layer, a semiconductor device embedded in the dielectric layer, an electrically conductive substrate, a redistribution layer having a first surface and a second surface providing at least one outer contact, and a first electrically conductive member. The semiconductor device has a first surface including at least one first contact pad and a second surface including at least one second contact pad. ... Infineon Technologies Ag

03/24/16 / #20160086854

Semiconductor device and method of manufacturing a semiconductor device having a glass piece and a single-crystalline semiconductor portion

A semiconductor device includes a glass piece and an active semiconductor element formed in a single-crystalline semiconductor portion. The single-crystalline semiconductor portion has a working surface, a rear side surface opposite to the working surface and an edge surface connecting the working and rear side surfaces. ... Infineon Technologies Ag

03/24/16 / #20160086844

Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core

A composite wafer is manufactured by providing a carrier wafer including graphite and a protective layer, forming a bonding layer, and bonding the carrier wafer to a semiconductor wafer through the bonding layer.. . ... Infineon Technologies Ag

03/24/16 / #20160086842

Method for producing a semiconductor device

A method for producing a semiconductor device having a sidewall insulation includes providing a semiconductor body having a first side and a second side lying opposite the first side. At least one first trench is at least partly filled with insulation material proceeding from the first side in the direction toward the second side into the semiconductor body. ... Infineon Technologies Ag

03/24/16 / #20160086838

Wafer arrangement and method for processing a wafer

A wafer arrangement in accordance with various embodiments may include: a wafer; and a wafer support ring, wherein the wafer and the wafer support ring are configured to be releasably attachable to one another.. . ... Infineon Technologies Ag

03/24/16 / #20160086793

Method and a processing device for processing at least one carrier

According to various embodiments, a method may include: filling a chamber and a tube coupled to the chamber with a first liquid, the tube extending upwards from the chamber; introducing a portion of a second liquid into the first liquid in the tube; and at least partially removing the first liquid from the chamber to empty the tube into the chamber so that a continuous surface layer from the introduced second liquid is provided on the first liquid in the chamber.. . ... Infineon Technologies Ag

03/24/16 / #20160086763

Ion source devices and methods

An ion source includes a chamber defining an interior cavity for ionization, an electron beam source at a first end of the interior cavity, an inlet for introducing ionizable gas into the chamber, and an arc slit for extracting ions from the chamber. The chamber includes an electrically conductive ceramic.. ... Infineon Technologies Ag

03/24/16 / #20160084914

System and method for a battery and test circuit

According to an embodiment, a system includes a switching regulator and an electrochemical storage test circuit. The switching regulator is coupled to a power supply input and configured to supply a regulated voltage to a regulated supply terminal that is configured to be coupled to a device. ... Infineon Technologies Ag

03/24/16 / #20160084887

Current sensor device having a sense resistor in a re-distribution layer

The electronic device for sensing a current comprises a semiconductor chip comprising a main face, an electronic circuit integrated in the semiconductor chip, a redistribution metallization layer disposed above the main face of the semiconductor chip, a current path formed in the redistribution metallization layer, the current path forming a resistor that is connected at two resistance defining end points to the electronic circuit for sensing a current flowing through the current path, and external contact elements connected with the redistribution metallization layer for feeding a current to be sensed into the current path.. . ... Infineon Technologies Ag

03/24/16 / #20160084684

Sensor system using safety mechanism

A sensor device using verification includes a sensor component and a verification component. The sensor component is configured to generate first data and second data. ... Infineon Technologies Ag

03/17/16 / #20160080879

System and method for a transducer

According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. ... Infineon Technologies Ag

03/17/16 / #20160080376

Method and device for checking an identifier

An embodiment relates to a method for processing data that includes (a) calculating a second identifier based on input data, (b) conducting a first operation comparing the second identifier with a first identifier, and (c) conducting a second operation comparing the second identifier with a modified first identifier.. . ... Infineon Technologies Ag

03/17/16 / #20160080375

Method and device for processing data

A method for processing data is suggested, and includes (i) conveying input data from a safety component to a security component, and (ii) calculating, at the security component, a second identifier based on the input data. The method further includes (iii) conveying the second identifier to the safety component, and (iv) verifying, at the safety component, a first identifier based on the second identifier.. ... Infineon Technologies Ag

03/17/16 / #20160080006

Circuit and method for a circuit

A circuit comprises a transmitter to provide a transmit signal. The circuit also comprises a coupler element to receive the transmit signal at an input port, to provide a first representation of the transmit signal at an antenna port and a second representation of the transmit signal at a testing port. ... Infineon Technologies Ag

03/17/16 / #20160079650

System and method for a directional coupler

In accordance with an embodiment, a circuit includes a directional coupler having a plurality of ports comprising an input port, a transmitted port, an isolated port and a coupled port, and an adjustable termination coupled to at least one of the plurality of ports.. . ... Infineon Technologies Ag

03/17/16 / #20160079649

System and method for a directional coupler module

In accordance with an embodiment, a circuit includes a first directional coupler comprising a first input port, a first transmitted port, a first isolated port and a first coupled port, where the first directional coupler disposed on a first substrate. The circuit also includes a first direction select switch having a first switch input port coupled to the first isolated port, a second switch input port coupled to the first coupled port, and a first switch output port, where the first direction select switch is disposed on the first substrate along with the directional coupler.. ... Infineon Technologies Ag

03/17/16 / #20160079465

Photo cell devices for phase-sensitive detection of light signals

Embodiments relate to photo cell devices. In one embodiment, a trench-based photo cells provides very fast capture of photo-generated charge carriers, particularly when compared with conventional approaches, as the trenches of the photo cells create depleted regions deep within the bulk of the substrate that avoid the time-consuming diffusion of carriers.. ... Infineon Technologies Ag

03/17/16 / #20160079445

Circuit arrangement and method of forming a circuit arrangement

A circuit arrangement may be provided. The circuit arrangement may include a semiconductor substrate including a first surface, a second surface opposite the first surface, and a first doped region of a first conductivity type extending from the first surface into the semiconductor substrate. ... Infineon Technologies Ag

03/17/16 / #20160079183

Semiconductor device arrangement and a method for forming a semiconductor device arrangement

A semiconductor device arrangement includes a semiconductor substrate which includes a semiconductor substrate front side and a semiconductor substrate back side. The semiconductor substrate includes at least one electrical element formed at the semiconductor substrate front side. ... Infineon Technologies Ag

03/17/16 / #20160079087

Method of processing a semiconductor device and chip package

In various embodiments, a method of processing a semiconductor device may include providing a semiconductor device comprising a contact pad and a polymer layer; and subjecting at least a part of the contact pad and the polymer layer to a plasma comprising ammonia.. . ... Infineon Technologies Ag

03/17/16 / #20160078157

Age estimator for safety monitoring based on local detectors

An age monitoring arrangement includes a sensor, a calculation component, and a timer. The sensor is configured to generate one or more measurements of an environmental property. ... Infineon Technologies Ag

03/17/16 / #20160076911

System that obtains a switching point with the encoder in a static position

A system including an encoder, multiple sensing elements and control logic. The encoder has a pole pitch and is configured to rotate in a direction of rotation. ... Infineon Technologies Ag

03/17/16 / #20160076910

Magnetic position sensor and sensing method

Embodiments of the present disclosure relate to a magnetic position sensor (100; 200). The magnetic position sensor (100; 200) includes a magnetic field source (110; 210) with at least a first multi-pole magnet strip (120-1; 220-1) arranged on a first surface and with at least a second multi-pole magnet strip (120-2; 220-2) arranged on a second surface perpendicular to the first surface, the first and the second multi-pole magnet strips are arranged in a fixed relative position to each other and comprise different numbers of magnet poles (130; 132; 230; 232) along a common length.. ... Infineon Technologies Ag

03/10/16 / #20160073093

Imaging circuits and a method for operating an imaging circuit

An imaging circuit includes a first vertical trench gate and a neighboring second vertical trench gate. The imaging circuit includes a gate control circuit. ... Infineon Technologies Ag

03/10/16 / #20160072383

System and method for a controlled feedback charge pump

According to various embodiments, a circuit includes a charge pump and a feedback circuit. The charge pump includes a first input, a second input configured to receive an offset signal, and an output terminal configured to provide a charge pump signal based on the first and second inputs. ... Infineon Technologies Ag

03/10/16 / #20160072376

Rectifying devices and rectifier arrangements

A rectifying device includes a power transistor, a gate control circuit and a capacitor structure arranged on a single semiconductor die. The power transistor includes a source or emitter terminal connected to a first terminal of the rectifying device, a drain or collector terminal connected to a second terminal of the rectifying device, and a gate. ... Infineon Technologies Ag

03/10/16 / #20160071974

Semiconductor device with control structure including buried portions and method of manufacturing

A semiconductor device includes transistor cells with source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. ... Infineon Technologies Ag

03/10/16 / #20160071972

Semiconductor switch with integrated temperature sensor

A semiconductor device includes a semiconductor body, at least one wiring layer disposed on the semiconductor body and a field effect transistor integrated in the semiconductor body. The field effect transistor has a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body. ... Infineon Technologies Ag

03/10/16 / #20160071833

Diode biased esd protection device and method

An esd protection device includes an mos transistor with a source region, drain region and gate region. A node designated for esd protection is electrically coupled to the drain. ... Infineon Technologies Ag

03/10/16 / #20160071814

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.. . ... Infineon Technologies Ag

03/10/16 / #20160071759

Method of forming a semiconductor substrate with buried cavities and dielectric support structures

A method of forming a semiconductor device includes forming a plurality of trenches extending into a semiconductor substrate from a first surface of the semiconductor substrate. Each of the trenches includes a narrower part in open communication with a wider part that is spaced apart from the first surface by the narrower part. ... Infineon Technologies Ag

03/10/16 / #20160071565

Memory circuits and a method for forming a memory circuit

A memory circuit includes a memory element which includes a first electrode layer including lithium. The memory element further includes a second electrode layer and a solid-state electrolyte layer arranged between the first electrode layer and the second electrode layer. ... Infineon Technologies Ag

03/10/16 / #20160070279

Monitoring current in power switch devices

In one example, a method includes generating, by a main switching element of a device, a load current; generating, by a regulation loop of the device, a sense current proportional to the load current; directly converting, by an analog-to-digital converter (adc) of the device, the sense current into a digital sense current value; and outputting, by the device and to an external device, a digital representation of the load current based on the digital sense current value.. . ... Infineon Technologies Ag

03/10/16 / #20160069710

Linear position and rotary position magnetic sensors, systems, and methods

Embodiments relate to a position sensor comprising a magnetic target. The magnetic target includes a magnetic multipole configured to generate a magnetic field. ... Infineon Technologies Ag

03/10/16 / #20160069708

Linear position and rotary position magnetic sensors, systems, and methods

Embodiments relate to a position sensor comprising a magnetic target. The magnetic target includes a magnetic multipole configured to generate a magnetic field. ... Infineon Technologies Ag

03/03/16 / #20160066099

Mems microphone with low pressure region between diaphragm and counter electrode

A mems microphone includes a first diaphragm element, a counter electrode element, and a low pressure region between the first diaphragm element and the counter electrode element. The low pressure region has a pressure less than an ambient pressure.. ... Infineon Technologies Ag

03/03/16 / #20160065399

Edge-based communication

Methods, devices and systems are disclosed where to generate a pulse a data line is actively driven to a first voltage followed by actively driving the data line to a second voltage.. . ... Infineon Technologies Ag

03/03/16 / #20160065152

System and method for low distortion capacitive signal source amplifier

According to an embodiment, a method includes amplifying a signal provided by a capacitive signal source to form an amplified signal, detecting a peak voltage of the amplified signal, and adjusting a controllable impedance coupled to an output of the capacitive signal source in response to detecting the peak voltage. The controllable impedance is adjusted to a value inversely proportional to the detected peak voltage.. ... Infineon Technologies Ag

03/03/16 / #20160064564

Semiconductor devices and methods of manufacture thereof

Semiconductor devices and methods of manufacture thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a gate dielectric over the semiconductor wafer, and forming a gate over the gate dielectric. ... Infineon Technologies Ag

03/03/16 / #20160064504

Method of manufacturing a device by locally heating one or more metalization layers and by means of selective etching

A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.. . ... Infineon Technologies Ag

03/03/16 / #20160064451

Semiconductor component comprising magnetic field sensor

The invention relates to a semiconductor component (100) comprising a semiconductor chip (10) configured as a wafer level package, a magnetic field sensor (11) being integrated into said semiconductor chip.. . ... Infineon Technologies Ag

03/03/16 / #20160064431

Integrated circuit with cavity-based electrical insulation of a photodiode

An integrated circuit includes a semiconductor substrate, at least one photodiode, which is formed on a surface of the semiconductor substrate, at least one trench, which extends from the surface of the semiconductor substrate into the semiconductor substrate and surrounds a region of the semiconductor substrate on which the photodiode is arranged, and at least one cavity in the semiconductor substrate, which is located below the surface of the semiconductor substrate. The at least one trench and the at least one cavity form an electrical insulation structure between the region of the semiconductor substrate on which the photodiode is arranged and one or more adjacent regions of the semiconductor substrate.. ... Infineon Technologies Ag

03/03/16 / #20160064362

Semiconductor device package and methods of packaging thereof

An embodiment of the present invention describes a method for forming a doped region at a first major surface of a semiconductor substrate where the first doped region being part of a first semiconductor device. The method includes forming an opening from the first major surface into the semiconductor substrate and attaching a semiconductor die to the semiconductor substrate at the opening. ... Infineon Technologies Ag

03/03/16 / #20160064298

Embedding additive particles in encapsulant of electronic device

An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, an encapsulant at least partially encapsulating the carrier and the at least one electronic chip, and a plurality of capsules in the encapsulant, wherein the capsules comprise a core comprising an additive and comprise a shell, in particular a crackable shell, enclosing the core.. . ... Infineon Technologies Ag

03/03/16 / #20160064258

Adapter tool and wafer handling system

An adapter tool that is configured to be attached to a loadport of a wafer handling system includes a support member, and first and second guiding elements supported by the support member. The first and second guiding elements are arranged for placing a first wafer magazine and a second wafer magazine, respectively. ... Infineon Technologies Ag

03/03/16 / #20160064255

Method for manufacturing a chip arrangement

A method for manufacturing a chip arrangement, including disposing a chip over a carrier, wherein the bottom side of the chip is electrically connected to the first carrier side via one or more contact pads on the chip bottom side, disposing a first encapsulation material over the first carrier side, wherein the first encapsulation material at least partially surrounds the chip, and disposing a second encapsulation material over a second carrier side, wherein the second encapsulation material is in direct contact with the second carrier side.. . ... Infineon Technologies Ag

03/03/16 / #20160064206

Method for processing an oxygen containing semiconductor body

A method for processing a semiconductor body is disclosed. In an embodiment, the method includes reducing an oxygen concentration in a silicon wafer in a first region adjoining a first surface of the silicon wafer by a first heat treatment, creating vacancies in a crystal lattice of the wafer at least in a second region adjoining the first region by implanting particles via the first surface into the wafer and forming oxygen precipitates in the second region by a second heat treatment.. ... Infineon Technologies Ag

03/03/16 / #20160062886

Method, device and system for data processing

An example relates to a method for data processing comprising: mapping between a logical address and a physical address of a memory, wherein the memory comprises several pages, wherein a group of pages comprises at least one page that comprises at least two portions, and wherein the at least two portions of each page of the group are not part of a single-page logical address space.. . ... Infineon Technologies Ag

03/03/16 / #20160062385

Generating a current with inverse supply voltage proportionality

A reference current generating circuit may comprise a first transistor with a gate, a source and a drain and a second transistor with a gate, a source and a drain is provided. In this case, the source of the first transistor and the source of the second transistor are connected to one another and the width-to-length ratios of the first transistor and the second transistor are equal. ... Infineon Technologies Ag

03/03/16 / #20160061967

Gamma ray detector and method of detecting gamma rays

In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. ... Infineon Technologies Ag

03/03/16 / #20160061637

Integrated angle sensing device

A sensor arrangement includes a sensor element and a magnet module. The sensor element is configured to measure a magnetic field and is positioned within a shaft. ... Infineon Technologies Ag

03/03/16 / #20160061630

Off axis sensor system

An angle sensor device includes first and second magnet tracks, a sensor component, and a control unit. The first and second magnet tracks are fixed to a rotatable object and are configured to generate a non-homogenous field. ... Infineon Technologies Ag

03/03/16 / #20160060144

Method of removing particulate silicon from an effluent water

A method of removing particulate silicon from an effluent water in accordance with various embodiments may include: adding a base to the effluent water, an amount of the added base being sub-stoichiometric with regard to a basic oxidation reaction of an entire amount of silicon contained in the effluent water to ortho-silicic acid or ortho-silicate ions; maintaining a resulting mixture of the effluent water and the base in a predetermined temperature range for a period of time, so that a sediment including silicon is formed; and separating the sediment and the effluent water from each other.. . ... Infineon Technologies Ag

03/03/16 / #20160060105

Mems device and method for manufacturing a mems device

A method for producing a mems device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. ... Infineon Technologies Ag

02/25/16 / #20160057875

Semiconductor module with gripping sockets, methods for gripping, for moving and for electrically testing a semiconductor module

One aspect of the invention relates to a semiconductor module with an outer housing having four side walls, and a circuit carrier, which is mounted on the outer housing and has an upper side and a lower side opposite the upper side. A semiconductor chip is arranged on the upper side and in the outer housing. ... Infineon Technologies Ag

02/25/16 / #20160057842

Device having a plurality of driver circuits to provide a current to a plurality of loads and method of manufacturing the same

In various embodiments, a device is provided. The device includes a substrate having a first side and a second side opposite the first side. ... Infineon Technologies Ag

02/25/16 / #20160057510

Protected transmission of independent sensor signals

The present disclosure relates to a sensor system having a shared communication interface that transmits sensor signals having independent channel protection data from a plurality of sensors. In some embodiments, the sensor signal has a plurality of sensors that independently generate sensor signals corresponding to a sensed quantity. ... Infineon Technologies Ag

02/25/16 / #20160056774

System and method for a low noise amplifier

In accordance with an embodiment, a circuit includes a first signal path coupled between an input port and an output port, and a second coupled between the input port and the output port in parallel with the first signal path. The first signal path includes a low noise amplifier (lna) having an input node coupled to the input port, and the second signal path includes a switch coupled between the input port and the output port.. ... Infineon Technologies Ag

02/25/16 / #20160056702

Mixed-mode power factor correction

A controller for controlling a power converter is described. The controller may be configured determine a parameter value associated with the power converter, compare the parameter value to a predefined value, and change the conduction mode of the power converter based on the comparison.. ... Infineon Technologies Ag

02/25/16 / #20160056369

Hall effect device

A hall effect device includes an active hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active hall region or extends in the active hall region; and wherein the sense contact elements are arranged in the active hall region and neighboring to the switchable supply contact elements.. . ... Infineon Technologies Ag

02/25/16 / #20160056280

Minority carrier conversion structure

According to an embodiment of a semiconductor device, the semiconductor device includes a power device well in a semiconductor substrate, a logic device well in the substrate and spaced apart from the power device well by a separation region of the substrate, and a minority carrier conversion structure including a first doped region of a first conductivity type in the separation region, a second doped region of a second conductivity type in the separation region and a conducting layer connecting the first and second doped regions. The second doped region includes a first part interposed between the first doped region and the power device well and a second part interposed between the first doped region and the logic device well.. ... Infineon Technologies Ag

02/25/16 / #20160056251

Semiconductor switching device including charge storage structure

A semiconductor switching device includes a first load terminal electrically connected to source zones of transistor cells. The source zones form first pn junctions with body zones. ... Infineon Technologies Ag

02/25/16 / #20160056132

Low-inductance circuit arrangement comprising load current collecting conductor track

A circuit arrangement includes at least two semiconductor chip having first and second load terminals that are each connected to one another, a first load current collecting conductor track, and also an external terminal electrically conductively connected thereto. For each of the semiconductor chips there is at least one electrical connection conductor electrically conductively connected to the first load terminal of the relevant semiconductor chip and also to the first load current collecting conductor track. ... Infineon Technologies Ag

02/25/16 / #20160056121

Metallized electric component

Various embodiments provide a metallized electric component for an electronic module, wherein the metallized electric component comprises a conductive electric element; and a metallization structure arranged over the conductive electric element and comprising at least a surface metallization layer, wherein the surface metallization layer comprises gold and silver and has a thickness between 2 nm and 100 nm.. . ... Infineon Technologies Ag

02/25/16 / #20160056095

Leadframe strip with sawing enhancement feature

A leadframe strip includes a plurality of leads chemically etched into a metal sheet, a plurality of support structures chemically etched into the metal sheet, and a plurality of connecting structures chemically etched into the metal sheet. Each of the connecting structures is integrally connected at a first end to one of the leads and integrally connected at a second end to one of the support structures so that the leads are held in place by the support structures. ... Infineon Technologies Ag

02/25/16 / #20160056088

Cold plate, device comprising a cold plate and method for fabricating a cold plate

A cold plate includes a single piece member and a channel. A top side of the channel is open. ... Infineon Technologies Ag

02/25/16 / #20160055114

High-speed serial ring

Methods and systems for transferring a high-speed data signal between more than two electronic devices within a system comprising a master device and a plurality of slave devices are presented. The master device and the plurality of slave devices are connected through high-speed links between high-speed interfaces, thereby forming a closed ring. ... Infineon Technologies Ag

02/25/16 / #20160053397

Method of forming a composite material and apparatus for forming a composite material

A method of forming a composite material is provided. The method may include: arranging a suspension in physical contact with a carrier, wherein the suspension may comprise an electrolyte and a plurality of particles of a first component of the composite material; causing the particles of the first component of the composite material to sediment on the carrier, wherein a plurality of spaces may be formed between the sedimented particles; and forming by electroplating a second component of the composite material from the electrolyte in at least a fraction of the plurality of spaces.. ... Infineon Technologies Ag

02/25/16 / #20160052776

Mems device

A mems device includes a fixed electrode and a movable electrode arranged isolated and spaced from the fixed electrode by a distance. The movable electrode is suspended against the fixed electrode by one or more spacers including an insulating material, wherein the movable electrode is laterally affixed to the one or more spacers.. ... Infineon Technologies Ag

02/18/16 / #20160050768

Module with integrated power electronic circuitry and logic circuitry

A integrated power module with integrated power electronic circuitry and logic circuitry includes an embedded power semiconductor module including one or more power semiconductor dies embedded in a dielectric material, a multi-layer logic printed circuit board with one or more logic dies mounted to a surface of the logic printed circuit board, and a flexible connection integrally formed between the embedded power semiconductor module and the logic printed circuit board. The flexible connection mechanically connects the embedded power semiconductor module to the logic printed circuit board and provides an electrical pathway between the embedded power semiconductor module and the logic printed circuit board. ... Infineon Technologies Ag

02/18/16 / #20160050089

Edge-based communication with a plurality of slave devices

Methods, systems and devices related to bidirectional edge-based pulse width modulation communication systems are disclosed. In some implementations, upon receipt of a predetermined trigger pulse at least two slave devices perform an action.. ... Infineon Technologies Ag

02/18/16 / #20160049474

Adjusting the charge carrier lifetime in a bipolar semiconductor device

Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.. ... Infineon Technologies Ag

02/18/16 / #20160049463

Semiconductor device with a shielding structure

A semiconductor device has a semiconductor body including opposing bottom and top sides, a surface surrounding the semiconductor body, an active semiconductor region formed in the semiconductor body, an edge region surrounding the active semiconductor region, a first semiconductor zone of a first conduction type formed in the edge region, an edge termination structure formed in the edge region at the top side, and a shielding structure arranged on that side of the edge termination structure facing away from the bottom side. The shielding structure has a number of n1≧2 first segments and a number of n2≧1 second segments. ... Infineon Technologies Ag

02/18/16 / #20160049411

Method for processing a carrier, a carrier, and a split gate field effect transistor structure

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.. . ... Infineon Technologies Ag

02/18/16 / #20160049329

Long-term heat treated integrated circuit arrangements and methods for producing the same

An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.. ... Infineon Technologies Ag

02/18/16 / #20160049325

Assembly for handling a semiconductor die and method of handling a semiconductor die

In various embodiments, an assembly for handling a semiconductor die is provided. The assembly may include a carrier with a surface. ... Infineon Technologies Ag

02/18/16 / #20160049296

Method for forming a semiconductor device

A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte.. ... Infineon Technologies Ag

02/18/16 / #20160048749

Chip card and chip card sleeve

According to one embodiment, a chip card is provided, having a first contact area and a second contact area, a measuring circuit that is configured to measure an impedance between the first contact area and the second contact area and a control circuit that is configured to take the measured impedance as a basis for configuring a function of the chip card.. . ... Infineon Technologies Ag

02/18/16 / #20160047908

Radar signal processor, radar system and method for monitoring a functional safety of a radar system

A radar signal processor includes a baseband signal generator, which generates a baseband signal based on information from a received radar signal and a lead-lag filter, which filters the baseband signal to generate a filtered signal.. . ... Infineon Technologies Ag

02/18/16 / #20160047866

Xmr angle sensors

Embodiments relate to xmr sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xmr structure; and a plurality of contact regions formed on the xmr structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xmr structure when a voltage is applied between the plurality of contact regions.. ... Infineon Technologies Ag

02/18/16 / #20160047863

Systems and methods for offset reduction in sensor devices and systems

Embodiments relate to systems and methods for reducing errors in sensor devices and systems. In embodiments, the sensor devices comprise magnetic field sensor devices, such as ordinary or vertical hall sensor devices, and the error to be reduced is a residual offset error, though in other embodiments other sensor devices can be used and/or other types of errors can be targeted for reduction or elimination. ... Infineon Technologies Ag

02/11/16 / #20160043664

Low profile transducer module

A transducer structure is disclosed. The transducer structure may include a substrate with a mems structure located on a first side of the substrate and a lid coupled to the first side of the substrate and covering the mems structure. ... Infineon Technologies Ag

02/11/16 / #20160043588

Active power factor corrector circuit

In accordance with an embodiment, a circuit includes a direct current (dc) output configured to be coupled to a rechargeable battery and a power factor corrector circuit coupled to the dc output, where the power factor corrector circuit includes a controller, and where the controller is configured to determine a switching frequency of the power factor corrector circuit in accordance with a battery charging curve of the rechargeable battery.. . ... Infineon Technologies Ag

02/11/16 / #20160043455

Microwave chip package device

A microwave device includes a semiconductor package comprising a microwave semiconductor chip and a waveguide part associated with the semiconductor package. The waveguide part is configured to transfer a microwave waveguide signal. ... Infineon Technologies Ag

02/11/16 / #20160043237

Semiconductor device with different contact regions

A semiconductor device includes at least one first contact region of a vertical device between a semiconductor substrate and an electrically conductive structure arranged adjacent to the semiconductor substrate, and at least one second contact region of the vertical device between the semiconductor substrate of the semiconductor device and the electrically conductive structure. The at least one first contact region is arranged adjacent to the at least one second contact region. ... Infineon Technologies Ag

02/11/16 / #20160043164

Capacitor and method of forming a capacitor

A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. ... Infineon Technologies Ag

02/11/16 / #20160043054

Batch process for connecting chips to a carrier

Methods for connecting chips to a chip carrier are disclosed. In some embodiments the method for connecting a plurality of chips to a chip carrier includes placing first chips on a transfer carrier, placing second chips on the transfer carrier, placing the transfer carrier with the first and second chips on the chip carrier and forming connections between the first chips and the chip carrier and the second chips and the chip carrier.. ... Infineon Technologies Ag

02/11/16 / #20160043050

Metallization stack and chip arrangement

A metallization stack for a chip arrangement is provided, wherein the metallization stack comprises a first metallic layer; a plating layer comprising an alloy comprising nickel and zinc arranged over the first metallic structure; and a second metallic layer arranged over the plating layer.. . ... Infineon Technologies Ag

02/11/16 / #20160043034

Device and method for manufacturing a device

In various embodiments a method of forming a device is provided. The method includes forming a metal layer over a substrate and forming at least one barrier layer. ... Infineon Technologies Ag

02/11/16 / #20160042998

Method of processing a substrate and a method of processing a wafer

According to various embodiments, a method of processing a substrate may include: forming a plurality of trenches into a substrate between two chip structures in the substrate, the trenches defining at least one pillar between the two chip structures and a sidewall on each of said two chip structures; disposing an auxiliary carrier on the substrate to hold the chip structures and the at least one pillar; at least partially filling the trenches with encapsulation material to cover the at least one pillar and the sidewalls, thereby at least partially encapsulating the chip structures; removing a portion of the encapsulation material to expose at least a portion of the at least one pillar; and at least partially removing the at least one pillar.. . ... Infineon Technologies Ag

02/11/16 / #20160042160

Apparatus and method for preventing cloning of code

An apparatus and corresponding method for preventing cloning of code. The apparatus includes a memory, an authentication module, and a device. ... Infineon Technologies Ag

02/11/16 / #20160041862

Method and system for timeout monitoring

Embodiments relate to systems and methods for timeout monitoring of concurrent commands or parallel communication channels comprising assigning or de-assigning each one of the commands or communication channels to a corresponding one of a plurality of timeout timers when corresponding commands are to be transmitted or command acknowledges are received respectively.. . ... Infineon Technologies Ag

02/11/16 / #20160041235

Maximization of target signal and elimination of backbias component for a differential upright position sensor

Embodiments relate to sensor device configurations. In one embodiment, a sensor device comprises a bias magnet, a field sensor die, a first set of one or more magnetic field sensor elements, a second set of one or more magnetic field sensor elements, a memory, and circuitry. ... Infineon Technologies Ag

02/11/16 / #20160041221

System and method for testing a radio frequency integrated circuit

In an embodiment, a method of testing a radio frequency integrated circuit (rfic) includes generating high-frequency test signals using the on-chip test circuit, measuring signal levels using on-chip power detectors, and controlling and monitoring the on-chip test circuit using low-frequency signals. The rfic circuit is configured to operate at high frequencies, and an on-chip test circuit that includes frequency generation circuitry configured to operate during test modes.. ... Infineon Technologies Ag

02/11/16 / #20160041211

Apparatus and method for determining the sensitivity of a capacitive sensing device

Embodiments relate to an apparatus for determining a sensitivity of a capacitive sensing device having a sensor capacitor with a variable capacitance. The apparatus includes a measurement module and a processor. ... Infineon Technologies Ag

02/11/16 / #20160041006

True-phase two-dimensional magnetic field sensor

Embodiments relate to magnetic field sensor devices, systems and methods that can more accurately detect edges of a target. In one embodiment, a sensor device comprises a first magnetic field sensor element and a second magnetic field sensor element proximate a target, such as a toothwheel, to sense rotation of the target. ... Infineon Technologies Ag

02/04/16 / #20160035867

Reverse-conducting igbt

A reverse-conducting igbt includes a semiconductor body having a drift region arranged between first and second surfaces. The semiconductor body further includes first collector regions arranged at the second surface and in ohmic contact with a second electrode, backside emitter regions and in ohmic contact with the second electrode. ... Infineon Technologies Ag

02/04/16 / #20160035850

Semiconductor device and manufacturing method

A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench.. ... Infineon Technologies Ag

02/04/16 / #20160035845

Vertical semiconductor device having semiconductor mesas with side walls and a pn-junction extending between the side walls

A vertical semiconductor device includes a semiconductor body having a backside and extending, in a peripheral area and in a vertical direction substantially perpendicular to the backside, from the backside to a first surface of the semiconductor body, the body including in an active area spaced apart semiconductor mesas extending, in the vertical direction, from the first surface to a main surface arranged above the first surface, in a vertical cross-section the peripheral area extending between the active area and an edge that extends between the back-side and the first surface, in the vertical cross-section each of the mesas including first and second side walls, a first pn-junction extending between the first and second side walls, and a conductive region in ohmic contact with the mesa and extending from the main surface into the mesa. Gate electrodes are arranged between adjacent mesas and extend across the first pn-junctions.. ... Infineon Technologies Ag

02/04/16 / #20160035835

Smart semiconductor switch

A semiconductor device comprises semiconductor substrate including vertical transistor and with dopants of a first type. Each transistor cell of transistor has body region formed in substrate and with dopants of second type. ... Infineon Technologies Ag

02/04/16 / #20160035834

Smart semiconductor switch

A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. ... Infineon Technologies Ag

02/04/16 / #20160035821

Power semiconductor device

A semiconductor device includes an active region and a semiconductor substrate layer having a lower part semiconductor layer of a second conductivity type. The active region includes a drift region formed by at least a part of the substrate layer, a body region of the second conductivity type formed on at least a part of the drift region, a source region of a first conductivity type disposed in the body region, and a first doped region of the first conductivity type at least partially disposed under the body region. ... Infineon Technologies Ag

02/04/16 / #20160035700

Chip package and chip assembly

A chip package is provided. The chip package may include an electrically conductive carrier; at least one first chip including a first side and a second side opposite of the first side, with its second side being electrically contacted to the electrically conductive carrier; an insulating layer over at least a part of the electrically conductive carrier and over at least a part of the first side of the chip; at least one second chip arranged over the insulating layer and next to the first chip; encapsulating material over the first chip and the second chip; and electrical contacts which extend through the encapsulation material to at least one contact of the at least one first chip and to at least one contact of the at least one second chip.. ... Infineon Technologies Ag

02/04/16 / #20160035677

Method for forming a package arrangement and package arrangement

A method for forming a package arrangement is provided, which may include: arranging at least one chip over a carrier; at least partially encapsulating the at least one chip with encapsulation material, wherein the encapsulation material is formed such that at least a portion of the carrier is uncovered by the encapsulation material; forming an electrically conductive structure over the encapsulation material and on the portion of the carrier uncovered by the encapsulation material; removing the carrier; and then forming a redistribution structure over the chip and the electrically conductive structure, wherein the redistribution structure electrically couples the electrically conductive structure and the chip.. . ... Infineon Technologies Ag

02/04/16 / #20160035665

Circuit arrangement and method for manufacturing the same

A circuit arrangement is provided, which may include: an embedding package chip carrier; a first chip and a second chip arranged over the embedding package chip carrier, each of the first chip and the second chip comprising: a control terminal, a first controlled terminal, and a second controlled terminal, wherein the control terminal and the first controlled terminal are arranged on a first side of the chip, and wherein the second controlled terminal is arranged on a second side of the chip, wherein the second side is opposite the first side; wherein the first chip is arranged on the embedding package chip carrier such that its first side is facing towards the embedding package chip carrier; and wherein the second chip is arranged on the embedding package chip carrier such that its first side is facing away from the embedding package chip carrier.. . ... Infineon Technologies Ag

02/04/16 / #20160035658

Encapsulated electronic chip device with mounting provision and externally accessible electric connection structure

An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, at least one electric connection structure mounted on the mounting surface, an encapsulant at least partially encapsulating the carrier and the at least one electronic chip, and partially encapsulating the at least one electric connection structure so that part of a surface of the at least one electric connection structure is exposed to an environment, and a mounting provision configured for mounting the electronic device at a periphery device.. . ... Infineon Technologies Ag

02/04/16 / #20160035654

Source down semiconductor devices and methods of formation thereof

A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. ... Infineon Technologies Ag

02/04/16 / #20160035560

Carrier system for processing semiconductor substrates, and methods thereof

In accordance with an alternative embodiment of the present invention, a method for forming a semiconductor device includes applying a paste over a semiconductor substrate, and forming a ceramic carrier by solidifying the paste. The semiconductor substrate is thinned using the ceramic carrier as a carrier.. ... Infineon Technologies Ag

02/04/16 / #20160034421

Digital pre-distortion and post-distortion based on segmentwise piecewise polynomial approximation

A nonlinear distorter is configured to mitigate nonlinearity from a nonlinear component of a nonlinear system. The nonlinear distorter operates to model the nonlinearity as a function of a piecewise polynomial approximation applied to segments of a nonlinear function of the nonlinearity. ... Infineon Technologies Ag

02/04/16 / #20160033585

Sensor with micro break compensation

A sensor device includes a high voltage component, a sensor component and a charge storage component. The sensor component utilizes a low voltage supply. ... Infineon Technologies Ag

02/04/16 / #20160033308

Intelligent gauge devices and related systems and methods

Embodiments relate to intelligent sensing devices, systems, and methods for the measurement of a wide variety of parameters. In embodiments, an intelligent sensing device includes at least one sensor configured to measure a characteristic proximate the sensing device as a data parameter, an integrated circuit electrically coupled to the at least one sensor, the integrated circuit comprising memory and configured to store the data parameter in the memory, and an antenna electrically coupled to the integrated circuit and configured to transmit the data parameter stored in the memory to a remote device.. ... Infineon Technologies Ag

02/04/16 / #20160031701

Micromechanical structure and method for fabricating the same

A micromechanical structure includes a substrate and a functional structure arranged at the substrate. The functional structure has a functional region configured to deflect with respect to the substrate responsive to a force acting on the functional region. ... Infineon Technologies Ag

02/04/16 / #20160031272

Device, element, passive element, methods and computer programs for obtaining tire characteristics

Embodiments provide a device, an element, a passive element, methods and computer programs for obtaining tire characteristics. A device includes a transmitter inside a tire to transmit a signal at least partially indicating a first characteristic of the tire. ... Infineon Technologies Ag

01/28/16 / #20160029478

Power semiconductor module system having a high isolation strength and method for producing a power semiconductor module arrangement having a high isolation strength

A power semiconductor module includes a module housing having a top side, a first terminal group, and a second terminal group. A circuit board, which has a first electrode and a second electrode, is mountable on the power semiconductor module in such a way that in the mounted state each terminal of the first group is electrically conductively connected to the first electrode and each terminal of the second group is electrically conductively connected to the second electrode. ... Infineon Technologies Ag

01/28/16 / #20160028440

Method for data transmission

A method for transmitting data in a direction of transmission of a clock signal, wherein positive and negative edges of the clock signal are transmitted by pulses with opposite polarity, wherein the polarity of the pulses is not inverted when no data is transmitted, and wherein the polarity of at least one pulse is inverted when data is transmitted.. . ... Infineon Technologies Ag

01/28/16 / #20160028307

High side switch with current limit feedback

Methods, devices, systems, and integrated circuits are disclosed for switching on an electrical connection to one or more loads. In one example, a switch device includes a voltage source, a power switch circuit block connected to the voltage source, and a current limitation circuit block connected to the voltage source and the power switch circuit block. ... Infineon Technologies Ag

01/28/16 / #20160027746

Semiconductor chip and method for forming a chip pad

A semiconductor chip with different chip pads and a method for forming a semiconductor chip with different chip pads are disclosed. In some embodiments, the method comprises depositing a barrier layer over a chip front side, depositing a copper layer after depositing the barrier layer, and removing a part of the copper layer located outside a first chip pad region, wherein a remaining portion of the copper layer within the first chip pad region forms a surface layer of the chip pad. ... Infineon Technologies Ag

01/28/16 / #20160027677

Substrate carrier system for moving substrates in a vertical oven and method for processing substrates

A substrate carrier system for moving substrates in a vertical oven and a method for processing substrates are disclosed. In some embodiments, a method for oxidizing material or depositing material includes carrying a plurality of substrates by a substrate carrier and inserting the substrate carrier into a vertical oven, wherein the plurality of substrates are held by the substrate carrier in predefined positions, wherein an angle measured between a main surface of a substrate of the plurality of substrates at one of the predefined positions and a vertical direction is less than 20 degrees. ... Infineon Technologies Ag

01/28/16 / #20160026208

High frequency oscillator with spread spectrum clock generation

Devices, systems, and methods for spread spectrum clock generation are disclosed. The devices, systems, and methods generate a clock signal at a frequency and generate a voltage output based on the frequency of the clock signal, wherein the generated voltage output is indicative of the frequency of the generated clock signal. ... Infineon Technologies Ag

01/28/16 / #20160025819

Xmr sensor device

Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack.. . ... Infineon Technologies Ag

01/28/16 / #20160025622

Sensing systems and methods using a coupling structure

A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. ... Infineon Technologies Ag

01/28/16 / #20160025529

Apparatus and a system for detecting a physical variable

An apparatus for detecting a physical variable has a first sensor unit and a second sensor unit. The first sensor unit detects a physical variable on the basis of a first detection principle. ... Infineon Technologies Ag

01/21/16 / #20160021780

Carrier, semiconductor module and fabrication method thereof

A semiconductor module includes a carrier having a first carrier surface and a second carrier surface opposite the first carrier surface, a first semiconductor chip mounted over the first carrier surface and a heatsink coupled to the second carrier surface with a first heatsink surface facing the carrier. The second carrier surface or the first heatsink surface has at least one cavity in the form of one or more of dimples and trenches.. ... Infineon Technologies Ag

01/21/16 / #20160019979

Method and device for evaluating a chip manufacturing process

A method for evaluating a chip manufacturing process is described comprising measuring, for each of a plurality of chips manufactured in a chip manufacturing process, a bit failure rate of the chip, determining a distribution of bit failure rates from the measured bit failure rates; determining a maximum allowed bit failure rate from a given chip failure rate limit, determining a value representing the probability that a chip manufactured in the chip manufacturing process is below the maximum allowed bit failure rate and determining, based on the value, whether the chip manufacturing process is suitable for the chip failure rate limit.. . ... Infineon Technologies Ag

01/21/16 / #20160018807

Sensor interface with variable control coefficients

The present disclosure is directed towards a sensor interface module that delivers a supply voltage to a plurality of sensors, and which exchanges data signals between the plurality of sensors and a control unit (e.g., an ecu). The sensor interface often employs a single-bit comparator (or a coarse analog to digital converter (adc), e.g., a 2-bit or 3-bit adc) to track signals to be exchanged between the sensors and controller over the sensor interface. ... Infineon Technologies Ag

01/21/16 / #20160018476

Molded sensor package with an integrated magnet and method of manufacturing molded sensor packages with an integrated magnet

A molded sensor package includes a leadframe having a sensor die attached to the leadframe, a magnet aligned with the sensor die and a single molding compound encasing the sensor die and attaching the magnet to the leadframe. A method of manufacturing the molded sensor package includes loading the magnet and the leadframe into a molding tool so that the magnet is aligned with the sensor die in the molding tool, molding the magnet and the sensor die with the same molding compound while loaded in the molding tool and curing the molding compound so that the magnet is attached to the leadframe by the same molding compound that encases the sensor die.. ... Infineon Technologies Ag

01/21/16 / #20160018281

Selfcalibration of capacitive pressure sensors with electrostatic forces

A pressure sensor calibration system comprises one or more pressures sensors for calibrating sensor parameters based on a membrane deflection or a membrane displacement from an electrostatic force. A measuring component measures capacitance values corresponding to applied voltages at the electrodes of the one or more pressure sensors. ... Infineon Technologies Ag

01/21/16 / #20160016787

Sensor module and semiconductor chip

A sensor module and semiconductor chip. One embodiment provides a carrier. ... Infineon Technologies Ag

01/21/16 / #20160016445

Tire pressure sensor modules, tire pressure monitoring system, wheel, methods and computer programs for providing information related to a tire pressure

A first tire pressure sensor module is configured to provide information related to a pressure of a tire of a vehicle and comprises a pressure sensor configured to determine the information related to the pressure of the tire. The pressure module further includes a controller configured to selectively operate the tire pressure sensor module in an active state and in an inactive state, wherein an energy consumption of the tire pressure sensor module is lower in the inactive state than in the active state. ... Infineon Technologies Ag

01/14/16 / #20160014916

Power semiconductor module with current sensor

A power semiconductor module includes a power electronics substrate having a first surface, a second surface opposite the first surface, a first longitudinal side, a second longitudinal side opposite the first longitudinal side, a module frame, which is arranged to enclose the power electronics substrate, at least one power terminal which is arranged at the first longitudinal side and extends through the module frame, a further terminal, which is arranged at the second longitudinal side and extends through the module frame, at least one power semiconductor component which is arranged on the first surface of the power electronics substrate and is electrically connected to at least one power terminal, and at least one current sensor which is designed to measure a current in a power terminal. The at least one current sensor is arranged on the power terminal and has a signal output connected to the further terminal.. ... Infineon Technologies Ag

01/14/16 / #20160014538

Micromechanical digital loudspeaker

A digital loudspeaker includes a substrate, a first stator fixed with respect to the substrate, a second stator fixed with respect to the substrate and spaced at a distance from the first stator, and a membrane between the first stator and the second stator. The membrane is displaceable between a first position in which the membrane mechanically contacts the first stator and a second position in which the membrane mechanically contacts the second stator. ... Infineon Technologies Ag

01/14/16 / #20160013354

Integrated circuit including esd device

An integrated circuit including esd device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. ... Infineon Technologies Ag

01/14/16 / #20160013311

Semiconductor device having a dense trench transistor cell array

One embodiment of a semiconductor device includes a dense trench transistor cell array. The dense trench transistor cell array includes a plurality of transistor cells in a semiconductor body. ... Infineon Technologies Ag

01/14/16 / #20160013176

Semiconductor device and method for manufacturing a semiconductor device

A semiconductor device includes a semiconductor substrate including a main surface with a polygonal geometry and a main electric circuit manufactured within a main region on the semiconductor substrate. The main electric circuit is operable to perform an electric main function. ... Infineon Technologies Ag

01/14/16 / #20160013117

Electrically conductive element, power semiconductor device having an electrically conductive element and method of manufacturing a power semiconductor device

An electrically conductive element includes an electrically conductive material and a plurality of inclusions of a phase change material. The phase change material has a phase transition temperature tc between 150° c. ... Infineon Technologies Ag

01/14/16 / #20160011279

Magnetic field sensor device

Devices, methods and systems are disclosed using a first magnetic field sensor of a first type and a second magnetic field sensor of a second type different from the first type. A signal from the first sensor may be used in a first magnetic field, range, and a signal from the second sensor may be used in a second magnetic field range.. ... Infineon Technologies Ag

01/14/16 / #20160011232

Testing device and a circuit arrangement

A testing device in accordance with various embodiments may include: a plurality of first terminals configured to be connected to a plurality of devices-under-test, wherein each first terminal of the plurality of first terminals may be configured to be connected to a respective device-under-test of the plurality of devices-under-test; a signal interface configured to be connected to a tester; and a circuit configured to exchange an identical first signal with each device-under-test of the plurality of devices-under-test through a respective first terminal of the plurality of first terminals, and to exchange at least one interface signal with the tester through the signal interface.. . ... Infineon Technologies Ag

01/14/16 / #20160011058

Integrated temperature sensor for discrete semiconductor devices

A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.. ... Infineon Technologies Ag

01/07/16 / #20160007101

Sensor device

A sensor and a method for sensing a signal are disclosed. In one embodiment, a sensor device includes a first sensor circuitry configured to provide a first sensor signal in a first frequency band, a second sensor circuitry configured to provide at least one second sensor signal in a second frequency band and a combiner circuitry configured to combine the first and the at least one second sensor signal into a combined sensor signal.. ... Infineon Technologies Ag

01/07/16 / #20160006394

System and method for a voltage controlled oscillator

In accordance with an embodiment, an oscillator includes a tank circuit and an oscillator core circuit having a plurality of cross-coupled compound transistors coupled to the tank circuit. Each of the plurality of compound transistors includes a bipolar transistor and a field effect transistor (fet) having a source coupled to a base of the bipolar transistor.. ... Infineon Technologies Ag

01/07/16 / #20160005818

Igbt having at least one first type transistor cell and reduced feedback capacitance

An igbt includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. ... Infineon Technologies Ag

01/07/16 / #20160005728

Integrated system and method of making the integrated system

A system and method of manufacturing a system are disclosed. An embodiment of the system includes a first packaged component comprising a first component and a first redistribution layer (rdl) disposed on a first main surface of the first packaged component, wherein the first rdl includes first pads. ... Infineon Technologies Ag

01/07/16 / #20160005687

Radio frequency power device

An electronic rf power device includes a transistor chip, a device input terminal and a device output terminal. Further, the electronic rf power device includes an output impedance transformation circuit, an output contact clip bonded to the transistor chip and to the output device terminal and at least one bond wire bonded to the output impedance transformation circuit and to the transistor chip.. ... Infineon Technologies Ag

01/07/16 / #20160005675

Double sided cooling chip package and method of manufacturing the same

A double sided cooling chip package is provided, wherein the package comprises a first heat sink; a second heat sink; a stacked chip arrangement comprising a first electronic chip, a second electronic chip and an interfacing substrate arranged between the first electronic chip and the second electronic chip and comprising electric circuitry on at least one main surface, wherein one of the first electronic chip and the second electronic chip is electrically connected to the electric circuitry of the interfacing substrate; and wherein the first electronic chip is attached to the first heat sink and the second electronic chip is attached to the second heat sink.. . ... Infineon Technologies Ag

01/07/16 / #20160005663

Extended contact area for leadframe strip testing

A leadframe strip includes a plurality of unit leadframes connected to a periphery of the leadframe strip, each unit leadframe having a die paddle, a plurality of leads and a semiconductor die attached to the die paddle. The leadframe strip is tested by electrically isolating at least the leads from the periphery of the leadframe strip such that at least some of the leads extend uninterrupted beyond a final lead outline of the unit leadframes after electrical isolation from the periphery of the leadframe strip. ... Infineon Technologies Ag

01/07/16 / #20160005647

Contacts for semiconductor devices and methods of forming thereof

A method for a method of forming a semiconductor device includes providing a semiconductor substrate having a bottom surface opposite a top surface with circuitry disposed at the top surface. The method further includes forming a first metal layer having a first metal over the bottom surface of the semiconductor substrate. ... Infineon Technologies Ag

01/07/16 / #20160004947

Chip card with integrated active components

In various embodiments, a chip card module is provided that can have: a chip card module support; a wiring structure that is arranged on the chip card module support; an integrated circuit that is arranged on the chip card module support and is electrically coupled to the wiring structure; a chip card module antenna that is arranged on the chip card module support and is electrically coupled to the wiring structure, and a lighting device that is arranged on the chip card module support and is electrically coupled to the wiring structure.. . ... Infineon Technologies Ag

01/07/16 / #20160004585

Apparatus and a method for providing an error signal for a control unit

An apparatus for providing an error signal for a control unit, the error signal indicating a malfunction of a sensor unit. The apparatus includes an input module configured to receive a sensor signal from the sensor unit, the sensor signal being a periodic signal between an upper level and a lower level of a physical quantity. ... Infineon Technologies Ag

01/07/16 / #20160003911

Battery cell characteristic identification

Devices, systems, and methods for battery monitoring are disclosed. An example method performs a first measurement on a battery cell installed in a location to determine a first charging capacity and determines a set of values for a permitted charging capacity trace region based on the first charging capacity and a number of charge/discharge cycles subsequent to performing the first measurement. ... Infineon Technologies Ag

01/07/16 / #20160003698

Motion detection using pressure sensing

According to an embodiment, a method of sensing motion includes receiving a first signal from a first pressure sensor and a second signal from a second pressure sensor, comparing the first signal and the second signal, and characterizing a motion based on the comparing.. . ... Infineon Technologies Ag

01/07/16 / #20160003683

Remote temperature sensing

An example method includes determining, based on a local vbe value and a local Δvbe value that represents a difference between a pair of local voltage values, a first value that corresponds to a temperature of a local sensor core, wherein a local voltage value of the pair of local voltage values corresponds to a voltage drop across a local p-n junction of the local sensor core; determining, based on a local vbe value and a remote Δvbe value that represents a difference between a pair of remote voltage values, a second value that corresponds to a temperature of a remote sensor core, wherein the pair of remote voltage values each correspond to respective voltage drops across a remote p-n junction of the remote sensor core. The example method also includes determining the temperature of the remote sensor core based at least on the first value and the second value.. ... Infineon Technologies Ag

01/07/16 / #20160001393

Method for producing a circuit carrier and for connecting an electrical conductor to a metallization layer of a circuit carrier

One aspect of the invention relates to a method for producing a circuit carrier. For this purpose, an electrically insulating carrier is provided, having an upper side and also an underside opposite from the upper side. ... Infineon Technologies Ag








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