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Infineon Technologies Ag patents (2017 archive)


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Dual gate switch device

Switch devices using switch transistors with dual gates are provided. The dual gates may be controlled independently from each other by first and second gate driver circuits.. ... Infineon Technologies Ag

Switch

A switch includes an input terminal, an output terminal, and a stack including transistors, such as, for example, field effect transistors, coupled in series, the stack being coupled between the input terminal and the output terminal. The switch also includes at least one switching element configured to be selectively operated in a conducting state or a non-conducting state, and at least one overvoltage protection element coupled to the stack by the at least one switching element. ... Infineon Technologies Ag

Switch device

A switch is provided having a switch transistor as well as a monitoring component to monitor a control signal applied to the switch transistor. With the monitoring component, in some implementation a monitoring of the control signal independent from a load path may be possible.. ... Infineon Technologies Ag

Doherty-chireix combined amplifier

An amplifier that is configured to amplify an rf signal includes a power combiner circuit. The power combiner circuit includes a first branch connected between a first rf input port and a summing node and a second branch connected between a second rf input port and the summing node. ... Infineon Technologies Ag

Semiconductor device including a ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a ldmos transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer.. ... Infineon Technologies Ag

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. ... Infineon Technologies Ag

Power semiconductor device

A power semiconductor device has a semiconductor body configured to conduct a load current in parallel to an extension direction between first and second load terminals of the power semiconductor device. The semiconductor body includes a doped contact region electrically connected to the second load terminal, a doped drift region having a dopant concentration that is smaller than a dopant concentration of the contact region, and an epitaxially grown doped transition region separated from the second load terminal by the contact region and that couples the contact region to the drift region. ... Infineon Technologies Ag

Semiconductor device including an ldmos transistor and a resurf structure

In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 ohm·cm, a front surface and a rear surface, an ldmos (lateral diffused metal oxide semiconductor) transistor in the semiconductor substrate, and a resurf structure comprising a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the ldmos transistor.. ... Infineon Technologies Ag

Semiconductor device including a ldmos transistor

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 ohm.cm, a front surface and a rear surface, at least one ldmos transistor in the semiconductor substrate, and a resurf structure. The resurf structure includes a doped buried layer arranged in the semiconductor substrate, spaced at a distance from the front surface and the rear surface, and coupled with at least one of a channel region and a body contact region of the ldmos transistor.. ... Infineon Technologies Ag

Ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate, a ldmos transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a conductive plug filling a first portion of the via and a conductive liner layer lining side walls of a second portion of the via and electrically coupled to the conductive plug.. ... Infineon Technologies Ag

Ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a ldmos transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the through substrate via onto the front surface of the semiconductor substrate and is electrically coupled with the intrinsic source.. ... Infineon Technologies Ag

Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures

In an embodiment, a substrate includes semiconductor material and a conductive via. The conductive via includes a via in the substrate, a conductive plug filling a first portion of the via and a conductive liner layer that lines side walls of a second portion of the via and is electrically coupled to the conductive plug. ... Infineon Technologies Ag

Microcontroller power reduction system and method

A microcontroller that can be configured to selectively operate in a synchronous mode or an asynchronous mode, and a method of selectively switching the operating mode is described. The microcontroller can include a processor and a system controller. ... Infineon Technologies Ag

Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

Embodiments relate to microelectromechanical systems (mems) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. ... Infineon Technologies Ag

12/21/17 / #20170367160

Driving several light sources

A device for driving several light sources is provided, wherein the several light sources are arranged in a matrix structure; wherein the several light sources of the matrix structure are connected to a semiconductor device; wherein a portion of the semiconductor device corresponds to a light source of the matrix structure, wherein the portion of the semiconductor device comprises a diagnosis function which when activated is arranged for supplying an output diagnosis signal.. . ... Infineon Technologies Ag

12/21/17 / #20170367155

Reducing power dissipation in driver circuits

In one example, a method includes generating, by a current source of a device, a first portion of a power signal that drives one or more load elements. In this example, a second portion of the power signal is generated by one or more components that are external to the device and are in parallel to the current source such that the second portion of the power signal does not flow through the current source.. ... Infineon Technologies Ag

12/21/17 / #20170366385

High speed pulse modulation system

A modulator operable to control an oscillator is described. The modulator can include a memory that stores oscillator control values and a bit streaming block. ... Infineon Technologies Ag

12/21/17 / #20170366180

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap transistor device. ... Infineon Technologies Ag

12/21/17 / #20170366155

Radio frequency device

Radio frequency devices and methods are provided where a network like a filter network or impedance matching network comprises a series connection of at least two inductors.. . ... Infineon Technologies Ag

12/21/17 / #20170366083

Circuit and method for operating the circuit

In various embodiments, a circuit is provided. The circuit may include a plurality of cascode stages connected in series with one another, a voltage divider which is connected in parallel with the plurality of cascode stages and is coupled to the cascode stages in order to make available a first electrical backup potential at at least one cascode stage of the plurality of cascode stages, and a controller which is configured to couple the at least one cascode stage of the plurality of cascode stages to a predefined second electrical backup potential if a voltage which is present at the voltage divider satisfies a predefined criterion.. ... Infineon Technologies Ag

12/21/17 / #20170366001

Transient voltage protection circuits, devices, and methods

A transient voltage protection circuit includes a first input/output pad, a second input/output pad, and a trigger circuit coupled between the first input/output pad and the second input/output pad. The trigger circuit includes a first trigger element which includes a first input/output node, a second input/output node, a third input/output node, and a first substrate diode coupled to the third input/output node of the first trigger element. ... Infineon Technologies Ag

12/21/17 / #20170365544

Semiconductor device fabricated by flux-free soldering

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. ... Infineon Technologies Ag

12/21/17 / #20170365516

Methods for forming a semiconductor device and semiconductor devices

A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconductor material portions remain.. . ... Infineon Technologies Ag

12/21/17 / #20170365507

Field emission devices and methods of making thereof

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. ... Infineon Technologies Ag

12/21/17 / #20170365460

Method and a processing device for processing at least one carrier

A processing device including: a chamber to accommodate at least one carrier in a processing region of the chamber, an inlet structure disposed over the chamber, the inlet structure providing a merging region fluidly connected to the processing region, a first liquid control arrangement coupled at least to the chamber, the first liquid control arrangement configured to provide a first liquid in the processing region of the chamber and to raise a level of the first liquid into the merging region of the inlet structure, and a second liquid control arrangement coupled to the inlet structure, the second liquid control arrangement configured to introduce a second liquid in the merging region, wherein the first liquid control arrangement is further configured to drain the first liquid from the chamber to form a continuous surface layer of the second liquid on the first liquid and to expose the at least one carrier.. . ... Infineon Technologies Ag

12/21/17 / #20170364111

Linear voltage regulator

A circuit comprising a series voltage regulator comprising a first semiconductor device coupled in series between a supply voltage and a voltage output, the series regulator operable to receive a voltage level from the supply voltage and to provide a regulated voltage level at the voltage output; and a parallel voltage regulator comprising a second semiconductor device coupled to the voltage output, the parallel voltage regulator operable to detect a variation in a voltage level provided at the voltage output, and to sink and/or source a current from/to the voltage output through the semiconductor device, an amount of current sunk and/or sourced adequate to offset the change in the voltage level at the voltage output.. . ... Infineon Technologies Ag

12/14/17 / #20170358735

Integrated circuit including sensor having injection molded magnetic material

An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor.. . ... Infineon Technologies Ag

12/14/17 / #20170358697

Controlling of photo-generated charge carriers

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region. ... Infineon Technologies Ag

12/14/17 / #20170358650

Semiconductor device comprising a transistor including a first field plate and a second field plate

A semiconductor device includes a transistor in a semiconductor substrate. The transistor includes a drift zone of a first conductivity type adjacent to a drain region, and a first field plate and a second field plate adjacent to the drift zone. ... Infineon Technologies Ag

12/14/17 / #20170358649

Method of manufacturing a semiconductor device having an impurity concentration

A method of manufacturing a semiconductor device includes irradiating the semiconductor body with particles through a first side of the semiconductor body, removing at least a part of impurities from an irradiated part of the semiconductor body by out-diffusion during thermal treatment in a temperature range between 450° c. To 1200° c., and forming a first load terminal structure at the first side of the semiconductor body.. ... Infineon Technologies Ag

12/14/17 / #20170358494

Plasma dicing of silicon carbide

A method of forming a semiconductor device includes forming an active region in a first side of a silicon carbide substrate, the silicon carbide substrate having a second side opposite the first side and forming a contact pad at the first side. The contact pad is coupled to the active region. ... Infineon Technologies Ag

12/14/17 / #20170358452

Superjunction structure in a power semiconductor device

A method of processing a power semiconductor device includes: providing a semiconductor body of the power semiconductor device; coupling a mask to the semiconductor body; and subjecting the semiconductor body to an ion implantation such that implantation ions traverse the mask prior to entering the semiconductor body.. . ... Infineon Technologies Ag

12/14/17 / #20170357278

Adaptive control for linear voltage regulator

In one example, a circuit includes a voltage source, a pass module, a differential amplifier module, and a control module. The pass module is configured to electronically couple, using a channel having a resistance, the voltage source and a load and to modify the resistance of the channel based on a control signal. ... Infineon Technologies Ag

12/14/17 / #20170356968

Chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package

A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.. . ... Infineon Technologies Ag

12/14/17 / #20170356869

Gas sensor, humidity sensor, and method for forming a sensor layer

Various embodiments relate to a gas sensor, including: a carrier, an electrode structure; and a sensor layer in contact with the electrode structure, wherein the sensor layer includes or essentially consists of turbostratic graphite.. . ... Infineon Technologies Ag

12/14/17 / #20170355591

Microelectromechanical device and a method of manufacturing a microelectromechanical device

A method of manufacturing a microelectromechanical component, the method may include: forming a mask over a layer, the mask comprising a structured surface; heating a region of the mask comprising the structured surface above a glass transition temperature of the mask to smooth out edges of the structured surface to form a corrugated surface; etching the layer covered by the mask, the etching removing the mask to carry over the corrugated surface of the mask into the layer and to form a corrugated surface of the layer; forming a diaphragm over the layer to form a corrugated region of the diaphragm configured to actuate; and forming an electrically-conductive component configured to at least one of: provide a force to actuate the diaphragm in response to an electrical signal transmitted to the electrically-conductive component and provide an electrical signal in response to an actuation of the diaphragm.. . ... Infineon Technologies Ag

12/07/17 / #20170353876

Rf receiver with built-in self-test function

A radio frequency (rf) receive circuit is described herein. In accordance with one embodiment, the rf receive circuit includes a mixer configured to receive an rf input signal to down-convert the rf input signal into a base-band or intermediate frequency (if) band, an analog-to-digital converter (adc), and a signal processing chain coupled between the mixer and the adc. ... Infineon Technologies Ag

12/07/17 / #20170353190

Ring oscillator having a flat frequency characteristic curve

A ring oscillator (200) comprises a feedback chain (110, 122) having a plurality of inverters (111-113). The ring oscillator (200) also comprises, for at least one of the inverters (111-113) of the chain (110, 122), a further inverter (211). ... Infineon Technologies Ag

12/07/17 / #20170352947

Communication device and method for determining a load impedance

According to one embodiment, a communication device is described comprising an antenna, a signal path for supplying a signal to the antenna, two directional couplers arranged within the signal path, wherein each directional coupler is coupled to an adjustable impedance defining the characteristic impedance of the directional coupler, a controller configured to set, for each of a plurality of impedances, the adjustable impedances of the directional couplers to the impedance, a return loss measurement circuit configured to determine, for each of the plurality of impedances, a return loss of the signal path when the adjustable impedances of the directional couplers are set to the impedance and a load impedance determination circuit configured to determine a load impedance of the signal path based on the determined return losses.. . ... Infineon Technologies Ag

12/07/17 / #20170352638

Semiconductor device including antistatic die attach material

A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. ... Infineon Technologies Ag

12/07/17 / #20170352617

Methods for semiconductor component design and for semiconductor component production and corresponding semiconductor components

Methods for designing semiconductor components, for fabricating semiconductor components, and corresponding semiconductor components are provided. In this case, capacitance structures are either coupled to a supply network or used for rectifying design violations.. ... Infineon Technologies Ag

12/07/17 / #20170352602

Sensor for a semiconductor device

A semiconductor arrangement is presented. The semiconductor arrangement comprises a semiconductor body, the semiconductor body including a semiconductor drift region, wherein the semiconductor drift region has dopants of a first conductivity type; a first semiconductor sense region and a second semiconductor sense region, wherein each of the first semiconductor sense region and the second semiconductor sense region is electrically connected to the semiconductor drift region and has dopants of a second conductivity type different from said first conductivity type; a first metal contact comprising a first metal material, the first metal contact being in contact with the first semiconductor sense region, wherein a transition between the first metal contact and the first semiconductor sense region forms a first metal-to-semiconductor transition; a second metal contact comprising a second metal material different from said first metal material, the second metal contact being separated from the first metal contact and in contact with the second semiconductor sense region, a transition between the second metal contact and the second semiconductor sense region forming a second metal-to-semiconductor transition different from said first metal-to-semiconductor transition; first electrical transmission means, the first electrical transmission means being arranged and configured for providing a first sense signal derived from an electrical parameter of the first metal contact to a first signal input of a sense signal processing unit; and second electrical transmission means separated from said first electrical transmission means, the second electrical transmission means being arranged and configured for providing a second sense signal derived from an electrical parameter of the second metal contact to a second signal input of said sense signal processing unit.. ... Infineon Technologies Ag

12/07/17 / #20170352572

Wafer expander

An apparatus for expanding chips of a wafer, wherein the apparatus comprises an expansion mechanism configured for expanding a tape on which the chips of the wafer are arranged, and an inflation mechanism configured for inflating at least a part of an edge portion of the tape so that part of the edge portion approaches a frame.. . ... Infineon Technologies Ag

12/07/17 / #20170352519

Energy filter for processing a power semiconductor device

A method of producing an implantation ion energy filter, suitable for processing a power semiconductor device. In one example, the method includes creating a preform having a first structure; providing an energy filter body material; and structuring the energy filter body material by using the preform, thereby establishing an energy filter body having a second structure.. ... Infineon Technologies Ag

12/07/17 / #20170350868

Acoustic wave detector

An acoustic wave detector may include: an exterior housing with an exterior housing wall, a gas chamber located within the exterior housing and configured to receive a gas therein. The exterior housing wall may include an aperture providing a gas passage between the gas chamber and the exterior of the acoustic wave detector. ... Infineon Technologies Ag

12/07/17 / #20170350810

Acoustic wave detector

An acoustic wave detector may include: an exterior housing with an exterior housing wall, a gas chamber located within the exterior housing and configured to receive a gas therein. The exterior housing wall may include an aperture providing a gas passage between the gas chamber and the exterior of the acoustic wave detector. ... Infineon Technologies Ag

12/07/17 / #20170349432

Removal of a reinforcement ring from a wafer

A method of removing a reinforcement ring from a wafer is described. The method includes forming a ring-shaped recess in a first surface of the wafer and separating the reinforcement ring from an inner region of the wafer along the ring-shaped recess.. ... Infineon Technologies Ag

11/30/17 / #20170347412

Adaptive overvoltage protection for multifunction led chain

In one example, a method includes determining, by a device of a system, a voltage feedback value that represents a voltage level of a power signal being provided to a plurality of load elements that are selectively active. In this example, the method also includes adjusting, by the device and based on a quantity of load elements of the plurality of load elements that are active, the voltage level of the power signal such that the voltage feedback value remains less than or equal to an overvoltage threshold.. ... Infineon Technologies Ag

11/30/17 / #20170346620

Communication devices, method for detecting an edge in a received signal and method for receiving data

A communication device includes a sampler configured to sample an input signal, wherein the sampler is configured to generate a sampled value for each sampling time of a sequence of sampling times, a sequence value generator configured to generate an output value for each sampling time of the sequence of sampling times based on the sampled values, wherein the sequence value generator is configured to set the output value for a sampling time based on the sampled value for the sampling time and based on a limitation of the difference between the output value for the sampling time and the output value for the preceding sampling time in the sequence of sampling times, and an edge detector configured to detect an edge in the input signal based on the output values.. . ... Infineon Technologies Ag

11/30/17 / #20170346533

Boosted near field communication device

A boosted near field communication device includes an electronic circuit, a transceiver circuit, an interface coupling the electronic circuit with a host controller, and a memory containing a first information about an activation characteristic of the electronic circuit. The transceiver circuit is configured to determine a timing requirement of a reading device based on one or more request signals, activate the electronic circuit with energy obtained at least one of from an electromagnetic field generated by the reading device or from a battery on receiving a request signal from the reading device, and ensure that after activating the electronic circuit, the electronic circuit can receive and process a request signal from the reading device corresponding to the determined timing requirement by using the determined timing requirement and the first information about an activation characteristic.. ... Infineon Technologies Ag

11/30/17 / #20170346531

Near field communication circuit

A near field communication circuit includes an antenna, a circuit logic unit coupled to the antenna, an energy storage coupled to the antenna, and a shunt control circuit, coupled to the antenna, for controlling a first operating voltage provided for the circuit logic unit by the antenna. The circuit logic unit is set up such that in a first mode of operation the circuit logic unit is operated by the first operating voltage provided by the antenna. ... Infineon Technologies Ag

11/30/17 / #20170346505

Circuits and methods for writing and reading data

A writing circuit for writing write data into a memory comprises an evaluator configured for providing an error handling code on the basis of the write data. A modifier reversibly modifies extended write data comprising both the write data and the error handling code in dependence on address information related to a writing address in order to provide modified extended write data. ... Infineon Technologies Ag

11/30/17 / #20170346431

Excitation current-limited power generator

An excitation current-limited power generator includes a digital interface configured to be coupled to an engine control unit (ecu), a regulator coupled configured to be coupled to an excitation current input of an alternator, the excitation current controlling current generated by the alternator, a frequency sensor configured to measuring rotation speed of the alternator, and memory storing a communicated limit received by the digital interface and a first permanent limit, the regulator configured to limit the excitation current to the lesser of the first permanent limit and the communicated limit.. . ... Infineon Technologies Ag

11/30/17 / #20170346419

Synchronization of internal oscillators of components sharing a communications bus

A drive circuit includes an internal oscillator and a pre-drive controller coupled to the internal oscillator. The pre-drive controller can have a switch control output configured to be coupled to a switch input. ... Infineon Technologies Ag

11/30/17 / #20170346308

Power balancing communication for battery management

A battery management system is described that includes a controller configured to control electrical charging and discharging of a plurality of blocks of a battery. The battery management system also includes an inter-block communication network including a master node and a plurality of slave nodes arranged in a ring-type daisy-chain configuration with the master node. ... Infineon Technologies Ag

11/30/17 / #20170345997

Hall sensor device and hall sensing method

The present disclosure relates to 3-dimensional hall sensor devices comprising a hall sensor element having a hall effect region implemented in a 3-dimensional shell and comprising at least three terminals. Each terminal is connected to at least one electrical contact of the hall effect region and each electrical contact is disposed at a different region of the 3-dimensional shell. ... Infineon Technologies Ag

11/30/17 / #20170345917

Electric assembly including a bipolar switching device and a wide bandgap transistor

An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.. ... Infineon Technologies Ag

11/30/17 / #20170345905

Wide-bandgap semiconductor device with trench gate structures

A semiconductor device includes trench gate structures extending from a first surface into a semiconductor body from a wide-bandgap semiconductor material. The trench gate structures separate mesa portions of the semiconductor body from each other. ... Infineon Technologies Ag

11/30/17 / #20170345818

Semiconductor devices with trench gate structures in a semiconductor body with hexagonal crystal lattice

A semiconductor device includes trench gate structures in a semiconductor body with hexagonal crystal lattice. A mean surface plane of a first surface is tilted to a <1-100> crystal direction by an off-axis angle, wherein an absolute value of the off-axis angle is in a range from 2 degree to 12 degree. ... Infineon Technologies Ag

11/30/17 / #20170345740

Semiconductor package, smart card and method for producing a semiconductor package

A semiconductor package includes a chip, a layer which is thermally coupled to the chip and which is formed from a material having a triggering temperature of greater than or equal to 200° c., starting from which an exothermic reaction takes place, and encapsulating material which at least partly covers the chip and the layer. The layer is configured in such a way and is arranged relative to the chip in such a way that, in the case of a triggered exothermic reaction of the material of the layer, at least one component of the chip is damaged on account of the temperature increase caused by the exothermic reaction.. ... Infineon Technologies Ag

11/30/17 / #20170345717

Methods for forming a semiconductor device and semiconductor devices

A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. ... Infineon Technologies Ag

11/30/17 / #20170345716

Method of separating semiconductor dies from a semiconductor substrate, semiconductor substrate assembly and semiconductor die assembly

Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. ... Infineon Technologies Ag

11/30/17 / #20170345714

Chip carriers and semiconductor devices including redistribution structures with improved thermal and electrical performance

A chip carrier includes a redistribution structure, wherein the redistribution structure includes: a dielectric layer extending in a horizontal direction; a first electrically conductive layer arranged over the dielectric layer and extending in the horizontal direction; a trench arranged in the dielectric layer and extending in the horizontal direction; and a filling material filling the trench, wherein the filling material is different from the material of the dielectric layer.. . ... Infineon Technologies Ag

11/30/17 / #20170345711

Semiconductor devices and methods for forming a semiconductor device

A method for forming a semiconductor device includes forming an insulating material layer above a semiconductor substrate and modifying at least a portion of a surface of the insulating material layer after forming the insulating material layer. Further, the method includes forming an electrical conductive structure on at least the portion of the surface of the insulating material layer after modifying at least the portion of the surface of the insulating material layer.. ... Infineon Technologies Ag

11/30/17 / #20170344690

Integrated circuits and methods of design and manufacture thereof

Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes using a first mask to pattern a gate material forming a plurality of first and second features. ... Infineon Technologies Ag

11/30/17 / #20170344302

Data processing device and method for saving power in a data processing device

According to one embodiment, a data processing device is described including a non-volatile memory configured to store configuration data for the data processing device, a volatile memory and a control system configured to copy the configuration data from the non-volatile memory to a section of the volatile memory, block writing to the section of the volatile memory and to put the data processing device into a hibernation mode in which the non-volatile memory is inactive and the volatile memory is active.. . ... Infineon Technologies Ag

11/30/17 / #20170343648

Radar systems and methods for operating a radar system

A method for operating a radar system includes increasing a frequency of a radar signal during a first time interval and transmitting the radar signal from a first transmit antenna during the first time interval. Moreover, the method includes decreasing the frequency of the radar signal during a second time interval and transmitting the radar signal from a second transmit antenna during the second time interval.. ... Infineon Technologies Ag

11/30/17 / #20170343623

Spinning current method for magfet-sensor

A magnetic-field-sensitive mosfet (magfet) is described herein. In accordance with one embodiment, the magfet comprises a semiconductor body, a first well region arranged in the semiconductor body and being doped with dopants of a first doping type, and a number of n contact regions arranged in the first well region and doped with dopants of a second doping type, which is complementary to the first doping type, wherein n is equal to or greater than three. ... Infineon Technologies Ag

11/30/17 / #20170343608

Measurements in switch devices

Magnetoresistive sensors are used to measure a load current of a switch. In some implementations, additionally a further current sensor may be used. ... Infineon Technologies Ag

11/23/17 / #20170338823

Circuit architecture for a measuring arrangement, a level shifter circuit, a charge pump stage and a charge pump, and method for operating same

In various embodiments, a level shifter circuit is provided. The level shifter circuit may include a signal source and a level shifter. ... Infineon Technologies Ag

11/23/17 / #20170338815

Electric assembly including a reverse conducting switching device and a rectifying device

An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells for desaturation configured to be, under reverse bias, turned on in a desaturation mode and to be turned off in a saturation mode. ... Infineon Technologies Ag

11/23/17 / #20170338648

Device overvoltage detector

A semiconductor device, overvoltage detection structure is described that includes a current path including a zener diode connected in series with a fuse. The zener diode is configured to conduct a current in response to an overvoltage condition at a semiconductor device and the fuse is configured to permanently break the current path of the overvoltage detection structure in response to the zener diode conducting the current.. ... Infineon Technologies Ag

11/23/17 / #20170338646

Device with power switch

A device comprises a solid-state power switch and a control configured to operate the power switch if at least one of a plurality of fault conditions of the device is triggered. An interface is configured to output a signal having a value selectively indicative of the triggered at least one fault condition in response to the at least one fault condition being triggered.. ... Infineon Technologies Ag

11/23/17 / #20170338406

Methods and apparatuses for producing magnetoresistive apparatuses

Methods and apparatuses for producing magnetoresistive apparatuses are provided. Here, structures are formed for defining regions of the same magnetization, magnets are magnetized, and structures are formed within the magnets of the regions, for example, in order to define magnetoresistive elements.. ... Infineon Technologies Ag

11/23/17 / #20170338302

Power semiconductor device with charge balance design

A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. ... Infineon Technologies Ag

11/23/17 / #20170338169

Chip package, method of forming a chip package and method of forming an electrical contact

In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.. ... Infineon Technologies Ag

11/23/17 / #20170338165

Chip package and method of forming a chip package

In various embodiments, a chip package is provided. The chip package may include a chip comprising a chip metal surface, a metal contact structure electrically contacting the chip metal surface, a packaging material at least partially encapsulating the chip and the metal contact structure, and a chemical compound physically contacting the packaging material and at least one of the chip metal surface and the metal contact structure, wherein the chemical compound may be configured to improve an adhesion between the metal contact structure and the packaging material and/or between the chip metal surface and the packaging material, as compared with an adhesion in an arrangement without the chemical compound, wherein the chemical compound is essentially free from functional groups comprising sulfur, selenium or tellurium.. ... Infineon Technologies Ag

11/23/17 / #20170338164

Chip package and method of forming a chip package

In various embodiments, a chip package is provided. The chip package may include a chip including a chip metal surface, a metal contact structure electrically contacting the chip metal surface, and packaging material including a contact layer being in physical contact with the chip metal surface and/or with the metal contact structure; wherein at least in the contact layer of the packaging material, a summed concentration of chemically reactive sulfur, chemically reactive selenium and chemically reactive tellurium is less than 10 atomic parts per million.. ... Infineon Technologies Ag

11/23/17 / #20170338153

Semiconductor device and methods for forming a plurality of semiconductor devices

A method for forming a plurality of semiconductor devices includes forming a plurality of trenches extending from a first lateral surface of a semiconductor wafer towards a second lateral surface of the semiconductor wafer. The method further includes filling a portion of the plurality of trenches with filler material. ... Infineon Technologies Ag

11/23/17 / #20170338069

Circuit architecture for a measuring arrangement, a level converter circuit, a charge pump stage and a charge pump, and method for operating same

In various embodiments, a measuring arrangement is provided. The measuring arrangement may include a micromechanical sensor including a capacitor, a bridge circuit including a plurality of capacitors, at least one capacitor of which is the capacitor of the micromechanical sensor, an amplifier coupled, on the input side, to an output of the bridge circuit, a dc voltage source configured to provide an electrical dc voltage, a chopper including at least one first charge store and a switch structure, the switch structure is configured to couple the first charge store alternately to the dc voltage and the bridge circuit for the purpose of coupling an electrical mixed voltage into the bridge circuit.. ... Infineon Technologies Ag

11/23/17 / #20170336718

Exposure mask, exposure apparatus and method for calibrating an exposure apparatus

In various embodiments, an exposure mask may include a carrier, a first exposure structure in a first structure plane of the carrier, and a second exposure structure in a second structure plane of the carrier. The two structure planes differ from one another.. ... Infineon Technologies Ag

11/23/17 / #20170336497

Electronic device for gesture recognition with improved data processing

An electronic device for gesture recognition comprises at least one transmission antenna port, at least reception antenna port, an analog-to-digital converter connected to the at least one reception antenna port, and first and second buffer memories connected to the analog-to-digital converter. The first and second buffer memories are configured to store data received from the analog-to-digital converter and configured to output the stored data in an alternating manner.. ... Infineon Technologies Ag

11/23/17 / #20170336230

Magnetic field sensor and magnetic field sensing method

The present disclosure relates to a magnetic field sensor including at least one magnetic field sensor element configured to generate a first sensor signal in response to a magnetic field, at least one hall sensor element configured to generate a second sensor signal in response to the magnetic field and a compensation logic configured to compensate one of the first and the second sensor signal using a respective other one of the first and the second sensor signal. In some embodiments, the at least one hall sensor element can be vertical hall sensor and can be arranged in a predetermined orientation.. ... Infineon Technologies Ag

11/16/17 / #20170332029

Optical sensor device and method for operating a time-of-flight sensor

An optical sensor device, which may be a time-of-flight sensor, comprises a pixel array having a plurality of pixels. Moreover, the optical sensor device comprises a read-out node configured to provide photo-generated charge carriers from a first pixel and a second pixel for read-out and a first transfer gate configured to enable a read-out of the first pixel using the read-out node and a second transfer gate to disable a read-out of the second pixel during read-out of the first pixel.. ... Infineon Technologies Ag

11/16/17 / #20170332024

Optical sensor device and method for manufacturing the optical sensor device

An optical sensor device comprising a conversion region to convert an electromagnetic signal into photo-generated charge carriers is shown. The optical sensor device comprises a read-out node configured to read-out the photo-generated charge carriers and a control electrode which is separated by an isolating material from the conversion region. ... Infineon Technologies Ag

11/16/17 / #20170331429

Stress compensated oscillator circuitry and integrated circuit using the same

A stress compensated oscillator circuitry comprises a sensor arrangement for providing a sensor output signal ssensor, wherein the sensor output signal ssensor is based on an instantaneous stress or strain component a in the semiconductor substrate, a processing arrangement for processing the sensor output signal ssensor and providing a control signal scontrol depending on the instantaneous stress or strain component σ in the semiconductor substrate, and an oscillator arrangement for providing an oscillator output signal sosc having an oscillator frequency fosc based on the control signal scontrol, wherein the control signal scontrol controls the oscillator output signal sosc, and wherein the control signal scontrol reduces the influence of the instantaneous stress or strain component σ in the semiconductor substrate onto the oscillator output signal sosc, so that the oscillator circuitry provides a stress compensated oscillator output signal.. . ... Infineon Technologies Ag

11/16/17 / #20170331159

Communication between battery cells

A system includes a battery and a plurality of integrated circuits. The battery includes a plurality of battery cells. ... Infineon Technologies Ag

11/16/17 / #20170329388

Bus transceiver

A semiconductor device is described herein. In accordance with one exemplary embodiment the semiconductor device includes a chip package, which includes at least one semiconductor chip, a dedicated ground pin, a first supply pin for receiving a first supply voltage, a second supply pin for receiving a second supply voltage, and a first input pin. ... Infineon Technologies Ag

11/16/17 / #20170328790

System and method for temperature sensing

A method includes post processing a plurality of temperature sensors grouped into a plurality of sets. For each set of the plurality of sets, a post-processing system coupled to corresponding temperature sensors receives a plurality output signals generated by the corresponding temperature sensors. ... Infineon Technologies Ag

11/09/17 / #20170325025

Microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device

Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.. ... Infineon Technologies Ag

11/09/17 / #20170325013

Device for detecting acoustic waves

A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.. ... Infineon Technologies Ag

11/09/17 / #20170325012

Device for detecting acoustic waves

A device for detecting acoustic waves may include a housing having a housing wall with an inner surface, and an acoustic wave sensor provided at least partially inside the housing and configured to detect acoustic waves. The inner surface of the housing wall is made in at least half of its entire area of a thermally insulating material.. ... Infineon Technologies Ag

11/09/17 / #20170324324

Voltage regulator with fast feedback

In some examples, a voltage regulator comprises an amplifier stage and a pass element configured to receive an output of the amplifier stage and an output of a feedback circuit. The voltage regulator further comprises the feedback circuit configured to receive an output of the pass element, wherein the feedback circuit includes a differentiator stage coupled to a feedback output stage, and wherein the differentiator stage comprises a single capacitor configured to differentiate an output voltage of the pass element.. ... Infineon Technologies Ag

11/09/17 / #20170323882

Poly silicon based interface protection

A semiconductor device includes an active device of a transistor disposed in a semiconductor substrate. An isolation layer is disposed at the semiconductor substrate, and a polysilicon substrate layer is disposed over the isolation layer and the semiconductor substrate. ... Infineon Technologies Ag

11/09/17 / #20170323881

Switch having first and second switching elements connected in parallel with one another

A switch includes an input terminal and an output terminal. The switch also includes a first stack having transistors coupled in series, and a second stack having transistors coupled in series. ... Infineon Technologies Ag

11/09/17 / #20170323865

Chip arrangements

A chip arrangement including a chip comprising a chip back side; a back side metallization on the chip back side, the back side metallization including a plurality of layers; a substrate comprising a surface with a metal layer; a zinc-based solder alloy configured to attach the back side metallization to the metal layer, the zinc-based solder alloy having by weight 8% to 20% aluminum, 0.5% to 20% magnesium, 0.5% to 20% gallium, and the balance zinc; wherein the metal layer is configured to provide a good wettability of the zinc-based solder alloy on the surface of the substrate. The plurality of layers may include one or more of a contact layer configured to contact a semiconductor material of the chip back side; a barrier layer; a solder reaction, and an oxidation protection layer configured to prevent oxidation of the solder reaction layer.. ... Infineon Technologies Ag

11/09/17 / #20170323858

Method of manufacturing a semiconductor device comprising a support element and semiconductor device comprising a support element

A semiconductor device includes a power transistor in a semiconductor substrate portion, where the semiconductor substrate portion includes a central portion and a kerf, components of the power transistor are arranged in the central portion, and the central portion has a thickness d. The semiconductor device also includes a support element disposed over a main surface of the central portion, where the support element has a smallest lateral extension t at a side adjacent to the main surface of the semiconductor substrate portion and a height h, where 0.1×h≦d≦4×h and 0.1×h≦t≦1.5×h.. ... Infineon Technologies Ag

11/09/17 / #20170322729

Method and apparatus for use in accessing a memory

A method of determining an access address includes determining a first address translation rule to translate a first input address to a first output address, determining a second address translation rule to translate a second input address to a second output address, and using at least one of the first address translation rule and the second address translation rule to determine the access address. An apparatus for accessing a memory based on a memory address includes a first address translator configured to translate a first input address to a first output address and a second address translator configured to translate a second input address to a second output address. ... Infineon Technologies Ag

11/09/17 / #20170322264

Sensor with micro break compensation

A sensor device includes a high voltage circuit, a sensor and a charge storage. The sensor utilizes a low voltage supply. ... Infineon Technologies Ag

11/09/17 / #20170322233

Twist independent mounting of a wheel speed sensor using a differential magnetoresistive sensor

A magnetic sensor may include a first sensing element and a second sensing element. The first sensing element may be capable of sensing a first component of a magnetic field that is non-parallel to an axis formed by an intersection of a first plane and a second plane. ... Infineon Technologies Ag

10/26/17 / #20170311082

System and method for a microphone

According to an embodiment, a microfabricated structure includes a cavity disposed in a substrate, a first clamping layer overlying the substrate, a deflectable membrane overlying the first clamping layer, and a second clamping layer overlying the deflectable membrane. A portion of the second clamping layer overlaps the cavity.. ... Infineon Technologies Ag

10/26/17 / #20170310317

Dimension regulation of power device to elminate hot spot generation

A parameter is compared to a lower threshold. The parameter is a gate-to-source voltage that is associated with a first transistor or a drain current that is associated with the first transistor. ... Infineon Technologies Ag

10/26/17 / #20170310310

Electronic circuit and method for transferring data

According to one embodiment, an electronic circuit is described comprising an output circuit configured to output data elements, an input circuit configured to receive the data elements from the output circuit wherein the input circuit is clocked by a clock signal and receives the data elements in accordance with its clocking, a signaling circuit configured to, when the output circuit switches from the output of one data element to the output of a following data element, signal to interrupt the clocking of the input circuit and a controller configured to interrupt the clocking of the input circuit in response to the signaling.. . ... Infineon Technologies Ag

10/26/17 / #20170310302

Tunable resonator element, filter circuit and method

A resonator element for use in a filter is provided. The resonator element includes a first resonator acoustically coupled to a second resonator. ... Infineon Technologies Ag

10/26/17 / #20170310007

Antenna tuning circuit, method for tuning an antenna, antenna arrangement and method for operating the same

An antenna tuning circuit is provided. The antenna tuning circuit includes an antenna, an inductor and a variable capacitor. ... Infineon Technologies Ag

10/26/17 / #20170309739

Semiconductor device having first and second circuits integrated in a semiconductor body

A semiconductor device includes at least one wiring layer disposed on a semiconductor body, a field effect transistor integrated in the semiconductor body, the field effect transistor having a plurality of gate electrodes residing in corresponding gate trenches formed in the semiconductor body, a first circuit integrated in the semiconductor body adjacent to the field effect transistor, and a second circuit integrated in the semiconductor body and remote from the first circuit. The semiconductor device further includes a first additional trench formed in the semiconductor body and at least one conductive pad formed in the at least one wiring layer. ... Infineon Technologies Ag

10/26/17 / #20170309720

Carbon based contact structure for silicon carbide device technical field

A method of forming a contact structure includes providing a silicon-carbide substrate having a highly doped silicon-carbide contact region formed in the substrate and extending to a main surface of the substrate. A carbon-based contact region is formed which is in direct contact with the highly doped silicon-carbide contact region and which extends to the main surface. ... Infineon Technologies Ag

10/26/17 / #20170309619

Semiconductor device comprising transistor cell units with different threshold voltages

An embodiment of a semiconductor device comprises a transistor cell array in a semiconductor body. The transistor cell array comprises transistor cell units. ... Infineon Technologies Ag

10/26/17 / #20170309583

Method for processing an electronic component and an electronic component

According to various embodiments, a method for processing an electronic component including at least one electrically conductive contact region may include: forming a contact pad including a self-segregating composition over the at least one electrically conductive contact region to electrically contact the electronic component; forming a segregation suppression structure between the contact pad and the electronic component, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.. . ... Infineon Technologies Ag

10/26/17 / #20170309582

Semiconductor devices with on-chip antennas and manufacturing thereof

A semiconductor device includes a semiconductor die having an active main surface and an opposite main surface opposite the active main surface. The semiconductor device further includes an antenna arranged on the active main surface of the semiconductor die and a recess arranged on the opposite main surface of the semiconductor die. ... Infineon Technologies Ag

10/26/17 / #20170309577

Method of manufacturing semiconductor devices

A method for use in manufacturing semiconductor devices includes providing a wafer includes a semiconductor substrate that is mechanically homogeneous. The method further comprises forming a mechanical structure in the semiconductor substrate. ... Infineon Technologies Ag

10/26/17 / #20170309565

Method of manufacturing semiconductor devices

A method for use in manufacturing semiconductor devices includes providing a structured layer on a wafer, and selectively providing a substance on a selected portion of the structured layer. A die comprises a semiconductor device on a substrate, where the semiconductor device includes a substance, and where the substance has a sidewall that is sheer with respect to one or more of a base surface or a top surface of the substrate.. ... Infineon Technologies Ag

10/26/17 / #20170309530

Semiconductor devices and a method of detecting a crack

A semiconductor device including an electrical conductive sensor structure connected to a sensor circuit. At least a part of the electrical conductive sensor structure is located below a pad of the semiconductor device. ... Infineon Technologies Ag

10/26/17 / #20170309517

Method for forming a semiconductor device and a semiconductor device

In certain embodiments, a semiconductor device includes a plurality of semiconductor chips. Each semiconductor chip comprises a semiconductor body having a first side and a second side opposite the first side, a graphite substrate bonded to the second side of the semiconductor body and comprising an opening leaving an area of the second side of the semiconductor body uncovered by the graphite substrate, and a back-side metallization arranged in the opening of the graphite substrate and electrically contacting the area of the second side. ... Infineon Technologies Ag

10/26/17 / #20170309484

Carbon vacancy defect reduction method for sic

A method of defect reduction for a sic layer includes activating dopants disposed in the sic layer, depositing a carbon-rich layer on the sic layer after activating the dopants, tempering the carbon-rich layer so as to form graphite on the sic layer, and diffusing carbon from the graphite into the sic layer. Carbon diffused from the graphite fills carbon vacancies in the sic layer.. ... Infineon Technologies Ag

10/26/17 / #20170308431

Method of using a memory device, memory device and memory device assembly

In various embodiments, a method of using a memory device is provided. The method may include storing data units, check units of a first code and check units of a second code in memory cells of the memory device, wherein the data units and the check units of the first code form code words of the first code, and wherein the data units and the check units of the second code form code words of the second code, applying the second code for error correction in at least a portion of the data units and/or in at least a portion of the check units of the first code, after the correcting the errors, retaining at least a retaining portion of the data units and of the check units of the first code and deleting at least a deleting portion of the check units of the second code, thereby freeing the memory cells that are occupied by the deleting portion of the check units of the second code, and during a subsequent using of the memory device, storing data in at least a reuse portion of the freed-up memory cells.. ... Infineon Technologies Ag

10/26/17 / #20170307696

Magnetic field sensor arrangement and method for processing a magnetic field sensor output signal

A magnetic field sensor arrangement includes a magnetic field sensor element configured to provide a sensor output signal responsive to a magnetic field, wherein the sensor output signal is representative of a magnetic field amplitude; a processing module configured to provide a processed sensor output signal representative of the sensor output signal; a switching level calculation module configured to calculate a switching level, (1) during a power up mode, based on a default switching level, and (2) during a running mode, based on the processed sensor output signal; a comparator module configured to compare the processed sensor output signal with the switching level, and to provide a comparator output signal based on the comparison; and a storage module configured to store the default switching level, provide the default switching level during the power up mode, and update the default switching level during the running mode.. . ... Infineon Technologies Ag

10/26/17 / #20170307669

Device and method for testing a mixer

A device and method for testing a mixer. For testing, signals having essentially the same frequency are applied to local oscillator (lo) and radio frequency (rf) inputs of the mixer. ... Infineon Technologies Ag

10/26/17 / #20170304922

Directly cooled substrates for semiconductor modules

A semiconductor module includes a substrate having a metallized first side and a metallized second side opposing the metallized first side. A semiconductor die is attached to the metallized first side of the substrate. ... Infineon Technologies Ag

10/12/17 / #20170294922

Electronic switching and protection circuit with a logarithmic adc

An embodiment electronic circuit includes an electronic switch comprising a load path, a first protection circuit configured to generate a first protection signal based on a current-time-characteristic of a load current through the load path of the electronic switch, and a drive circuit configured to drive the electronic switch based on the first protection signal. The first protection circuit includes a logarithmic analog-to-digital converter (adc) configured to receive an adc input signal representing the load current and to output an adc output signal that includes a sequence of values such that each of the values represents a respective sample of the adc input signal, a filter configured to filter the adc output signal and output a filter output signal, and a comparator circuit configured to generate the first protection signal based on comparing the filter output signal with a predefined threshold.. ... Infineon Technologies Ag

10/12/17 / #20170294918

Electronic switching and protection circuit

An embodiment electronic circuit includes an electronic switch comprising a load path, a first protection circuit configured to generate a first protection signal based on a current-time-characteristic of a load current through the load path of the electronic switch, and a drive circuit configured to drive the electronic switch based on the first protection signal. The first protection circuit includes an analog-to-digital converter (adc) configured to receive an adc input signal representing the load current, to sample the adc input signal once in each of a plurality of successive sampling periods, and to output an adc output signal that includes a sequence of values such that each of the values represents a respective sample of the adc input signal. ... Infineon Technologies Ag

10/12/17 / #20170294774

Electronic switching and protection circuit with wakeup function

An embodiment electronic circuit includes an electronic switch comprising a load path, and a control circuit configured to drive the electronic switch. The control circuit is configured to operate in one of a first operation mode and a second operation mode based at least on a level of a load current of the electronic switch. ... Infineon Technologies Ag

10/12/17 / #20170294773

Electronic switching and protection circuit with test mode function

An embodiment electronic circuit includes an electronic switch comprising a load path, and a control circuit configured to drive the electronic switch and configured to operate in one of a first operation mode and a test mode. The control circuit comprises a test mode input and is configured to operate in the test mode based on a test signal received at the test mode input. ... Infineon Technologies Ag

10/12/17 / #20170294772

Electronic switching and protection circuit with several operation modes

An embodiment electronic circuit includes an electronic switch comprising a load path, and a control circuit configured to drive the electronic switch. The control circuit is configured to operate in one of at least two operation modes. ... Infineon Technologies Ag

10/12/17 / #20170294403

Chip assembling on adhesion layer or dielectric layer, extending beyond chip, on substrate

Electronic module (100), which comprises a first substrate (102), a first dielectric layer (104) on the first substrate (102), at least one electronic chip (106), which is mounted with a first main surface (108) directly or indirectly on partial region of the first dielectric layer (104), a second substrate (110) over a second main surface (114) of the at least one electronic chip (106), and an electrical contacting (116) for the electric contact of the at least one electronic chip (106) through the first dielectric layer (104), wherein the first adhesion layer (104) on the first substrate (102) extends over an area, which exceeds the first main surface (108).. . ... Infineon Technologies Ag

10/12/17 / #20170294299

Method for producing a self-aligning masking layer

In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.. ... Infineon Technologies Ag

10/12/17 / #20170293833

Smart card and method for producing a smart card

In various embodiments, a smart card is provided. The smart card includes a smart card body having a first depression for accommodating a chip carrier and having a second depression in the first depression for accommodating a chip that is arranged on the chip carrier, and a booster antenna structure having a chip coupling region for inductive coupling to the chip. ... Infineon Technologies Ag

10/12/17 / #20170293519

Method and system for timeout monitoring

Embodiments relate to systems and methods for timeout monitoring of concurrent commands or parallel communication channels comprising assigning or de-assigning each one of the commands or communication channels to a corresponding one of a plurality of timeout timers when corresponding commands are to be transmitted or command acknowledges are received respectively.. . ... Infineon Technologies Ag

10/12/17 / #20170292987

Current distribution device protected against over-voltage conditions

An electronic device for testing of semiconductor components with test needles includes an electric power source, a plurality of test needles connected with the electric power source, a plurality of electric circuits, each one of the electric circuits connected upstream of one of the test needles, each one of the electric circuits including at least one circuit component which has low resistance in a range of electric currents and has high resistance above a given limit electric current, a control voltage source connected with each one of the electric circuits, and two dc/dc converter circuits connected between the control voltage source and the electric circuits.. . ... Infineon Technologies Ag

10/12/17 / #20170292898

Control system for power train control

Embodiments of the present disclosure relate to methods, system, and devices for synchronizing angular position information between a first and a second semiconductor chip used for engine management in an automobile is described. In accordance with one embodiment, a system for synchronizing angular position information between a first and a second semiconductor chip comprises the first and the second semiconductor chip and a digital real-time communication link connecting the first and the second semiconductor chip. ... Infineon Technologies Ag

10/12/17 / #20170292832

Wafer probing

A method of determining a minimum permissible tip diameter of probing needles of a probe card for wafer probing is described. The method includes performing a plurality of contact procedures of at least one probing needle to a plurality of bonding pads on a wafer. ... Infineon Technologies Ag

10/12/17 / #20170292467

Control infrastructure for automotive applications

Embodiments of the present disclosure relate to a control infrastructure and relates systems and devices for controlling automotive components associated with a first domain of automotive components. In accordance with one exemplary embodiment the system comprises a performance cluster chip, at least a first peripheral integrated circuit (ic) chip, and a digital real-time communication link connecting the performance cluster chip and the first peripheral ic chip. ... Infineon Technologies Ag

10/05/17 / #20170290112

Reducing power dissipation in driver circuits

In one example, a method includes generating, by a current source of a device, a first portion of a power signal that drives one or more load elements. In this example, a second portion of the power signal is generated by one or more components that are external to the device and are in parallel to the current source such that the second portion of the power signal does not flow through the current source.. ... Infineon Technologies Ag

10/05/17 / #20170290098

Light emitter devices, optical filter structures and methods for forming light emitter devices and optical filter structures

A light emitter device contains a heater structure configured to emit light if a predefined current flows through the heater structure. The heater structure is arranged at a heater carrier structure. ... Infineon Technologies Ag

10/05/17 / #20170290097

Light emitter devices, photoacoustic gas sensors and methods for forming light emitter devices

A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. ... Infineon Technologies Ag

10/05/17 / #20170289703

System and method for an optical mems transducer

According to an embodiment, an optical mems transducer includes a diffraction structure including alternating first reflective elements and openings arranged in a first plane, a reflection structure including second reflective elements and configured to deflect with respect to the diffraction structure, and an optical element configured to direct a first optical signal at the diffraction structure and the reflection structure and to receive a second optical signal from the diffraction structure and the reflection structure. The second reflective elements are arranged in the first plane when the reflection structure is at rest. ... Infineon Technologies Ag

10/05/17 / #20170288662

System and method for a high-side power switch

A system and method for a high-side power switch includes a gate driver configured to be coupled to a power switch, a voltage measurement circuit configured to be coupled directly to the power switch, a switch monitoring circuit configured to be coupled to the power switch, the switch monitoring circuit configured to measure an output current of the power switch, a current limitation circuit coupled to the gate driver and the switch monitoring circuit, the current limitation circuit configured to regulate gate-source voltage of the gate driver when the output current exceeds a threshold value, and a controller coupled to the current limitation circuit and the voltage measurement circuit, the controller configured to determine a mode of operation according to a startup voltage measured by the voltage measurement circuit during a startup sequence, the controller further configured to provide the threshold value to the current limitation circuit according to the mode of operation and a switch voltage measured by the voltage measurement circuit. . ... Infineon Technologies Ag

10/05/17 / #20170288176

Embedded chip packages and methods for manufacturing an embedded chip package

A method for manufacturing an embedded chip package is provided. The method may include: forming electrically conductive lines over a substrate; placing the substrate next to a chip arrangement comprising a chip, the chip comprising one or more contact pads, wherein one or more of the electrically conductive lines are arranged proximate to a side wall of the chip; and forming one or more electrical interconnects over the chip arrangement to electrically connect at least one electrically conductive line to at least one contact pad.. ... Infineon Technologies Ag

10/05/17 / #20170288145

Method of forming a graphene structure

In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion.. ... Infineon Technologies Ag

10/05/17 / #20170288130

Semiconductor device including an encapsulation material defining a through-hole

A semiconductor device includes a substrate, a semiconductor die attached to the substrate, and an encapsulation material. The semiconductor die includes a sensing element. ... Infineon Technologies Ag

10/05/17 / #20170288125

Mems heater or emitter structure for fast heating and cooling cycles

According to various embodiments, a mems device includes a substrate, an electrically movable heating element having a first node coupled to a first terminal of a first voltage source and the second node coupled to a reference voltage source, a first anchor anchoring the first node and a second anchor anchoring the second node of the electrically movable heating element to the substrate, and a cavity between the first anchor and the second anchor and between the electrically movable heating element and the substrate.. . ... Infineon Technologies Ag

10/05/17 / #20170287880

Electronic device package having a dielectric layer and an encapsulant

A method for fabricating an electronic device package includes providing a carrier, disposing a semiconductor chip onto the carrier, the semiconductor chip having a contact pad on a main face thereof remote from the carrier, applying a contact element onto the contact pad, applying a dielectric layer on the carrier, the semiconductor chip, and the contact element, and applying an encapsulant onto the dielectric layer.. . ... Infineon Technologies Ag

10/05/17 / #20170287820

Semiconductor package having a source-down configured transistor die and a drain-down configured transistor die

A semiconductor package includes a substrate, a first transistor die secured to the substrate and a second transistor die secured to the substrate. The first transistor die has a source terminal at a bottom side of the first transistor die which faces the substrate and a drain terminal and a gate terminal at a top side of the first transistor die which faces away from the substrate. ... Infineon Technologies Ag

10/05/17 / #20170287798

Baseplate for an electronic module and method of manufacturing the same

Various embodiments provide an electronic module comprising a baseplate. A recess is formed in one main surface of the baseplate, wherein the recess is adapted to accommodate an electronic chip. ... Infineon Technologies Ag

10/05/17 / #20170286347

Differential bus receiver

Systems, devices, methods, and techniques are disclosed for bus receivers operable to provide a data output corresponding to a voltage differential provided on a two-conductor data bus. In one example, a bus receiver comprises a four-quadrant input circuit and a gain stage coupled to the four-quadrant input circuit. ... Infineon Technologies Ag

10/05/17 / #20170285077

Current difference sensors, systems and methods

Embodiments relate to current difference sensors, systems and methods. In an embodiment, a current difference sensor includes first and second conductors arranged relative to one another such that when a first current flows through the first conductor and a second current, equal to the first current, flows through the second conductor, a first magnetic field induced in the first conductor and a second magnetic field induced in the second conductor cancel each other at a first position and a second position; and first and second magnetic field sensing elements arranged at the first and second positions, respectively.. ... Infineon Technologies Ag

10/05/17 / #20170284951

System and method for a transducer in an ewlb package

According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.. ... Infineon Technologies Ag

10/05/17 / #20170284880

Multi-die pressure sensor package

A pressure sensor package includes a pressure sensor having a first side attached to a substrate and a second side opposite the first side, the first side having a pressure inlet aligned with an opening in the substrate, the second side having one or more electrical contacts. A logic die attached to an opposite side of the substrate as the pressure sensor is operable to process signals from the pressure sensor. ... Infineon Technologies Ag

10/05/17 / #20170284836

Shaft-integrated angle sensing device

A sensor arrangement includes a sensor element and a magnet module. The sensor element is configured to measure a magnetic field and is positioned within a shaft. ... Infineon Technologies Ag

10/05/17 / #20170283247

Semiconductor device including a mems die

A semiconductor device includes a microelectromechanical system (mems) die, a lid, and an integrated circuit die. The lid is over the mems die and defines a cavity between the lid and the mems die. ... Infineon Technologies Ag

10/05/17 / #20170283246

Transducer package with integrated sealing

A package which comprises a carrier, a transducer mounted on the carrier and configured for converting between a package-external property and an electric signal, a package housing at least partially housing at least one of the carrier and the transducer, and a sealing which forms at least part of the package housing for sealing between the package and a package-external body.. . ... Infineon Technologies Ag

10/05/17 / #20170283144

Carrier tape comprising pockets including a base bottom portion and a raised bottom portion

A carrier tape comprises a flexible body portion having a top surface. The flexible body portion comprises a plurality of pockets. ... Infineon Technologies Ag

10/05/17 / #20170282426

Molding system with movable mold tool

An apparatus for molding a physical body comprising at least two mold materials, wherein the apparatus comprises a first mold tool and a second mold tool configured for defining a mold volume in between in which the physical body is moldable by supplying the at least two mold materials, and a supply unit configured for separately supplying the at least two mold materials to the mold volume, wherein at least part of at least one of the first mold tool and the second mold tool is movable to thereby increase the dimension of the mold volume after having supplied the first mold material to the mold volume and before and/or during supplying the second mold material to the mold volume.. . ... Infineon Technologies Ag

09/28/17 / #20170280237

System and method for an acoustic transducer and environmental sensor package

According to an embodiment, a transducer package includes a circuit board including a port, a lid disposed over the port, an acoustic transducer disposed over the port and including a membrane, and an environmental transducer disposed at the circuit board in the port. The lid encloses a first region, and the membrane separates the port from the first region. ... Infineon Technologies Ag

09/28/17 / #20170279425

System and method for signal amplification using a resistance network

A signal amplification method includes receiving, from a capacitive sensor, a first input signal by a first control terminal of a first transistor, and a second input signal by a first control terminal of a second transistor. The method also includes producing a first output signal, including amplifying a first signal at a first load path terminal of the first transistor using a first inverting amplifier having an output coupled to a resistance network, and producing a second output signal, including amplifying a second signal at a first load path terminal of the second transistor using a second inverting amplifier having an output coupled to the resistance network. ... Infineon Technologies Ag

09/28/17 / #20170279419

Lc network for a power amplifier with selectable impedance

An amplifier is configured to amplify an rf signal as between an input terminal and an output terminal across a wideband frequency range. A first lc network is connected to the input terminal and has first and second reactive components. ... Infineon Technologies Ag

09/28/17 / #20170279345

Active common mode cancellation

In some examples, a circuit is configured to generate a first signal based at least in part on an input signal, wherein the first signal comprises a common mode signal and a load signal. The circuit is further configured to generate a second signal based at least in part on the input signal, wherein the second signal comprises an inverted version of the common mode signal. ... Infineon Technologies Ag

09/28/17 / #20170279150

Battery, a battery element and a method for forming a battery

A battery, a battery element and a method for forming a battery element are provided. In an embodiment, a battery element includes a substrate with a plurality of trenches extending into the substrate, wherein a part of a trench of the plurality of trenches is filled with a solid state battery structure, and wherein the trench of the plurality of trenches comprises a cavity.. ... Infineon Technologies Ag

09/28/17 / #20170278930

Semiconductor device having a graphene layer, and method of manufacturing thereof

A method for manufacturing a semiconductor device includes: providing a carrier wafer and a silicon carbide wafer; bonding a first side of the silicon carbide wafer to the carrier wafer; splitting the silicon carbide wafer bonded to the carrier wafer into a silicon carbide layer thinner than the silicon carbide wafer and a residual silicon carbide wafer, the silicon carbide layer remaining bonded to the carrier wafer during the splitting; and forming a graphene material on the silicon carbide layer.. . ... Infineon Technologies Ag

09/28/17 / #20170278836

Integrated system and method of making the integrated system

A system and method of manufacturing a system are disclosed. An embodiment of the system includes a first packaged component comprising a first component and a first redistribution layer (rdl) disposed on a first main surface of the first packaged component, wherein the first rdl includes first pads. ... Infineon Technologies Ag

09/28/17 / #20170278762

Redirecting solder material to visually inspectable package surface

A package comprising an electronic chip, a laminate type encapsulant in and/or on which the electronic chip is mounted, a solderable electric contact on a solder surface of the package, and a solder flow path on and/or in the package which is configured so that, upon soldering the electric contact with a mounting base, part of solder material flows along the solder flow path towards a surface of the package at which the solder material is optically inspectable after completion of the solder connection between the mounting base and the electric contact.. . ... Infineon Technologies Ag

09/28/17 / #20170278757

Methods of manufacturing semiconductor devices

Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes an array having at least one first region and at least one second region. ... Infineon Technologies Ag

09/28/17 / #20170276723

Capacitive sensor testing

Sensor devices and methods are provided where a test signal is applied to a capacitive sensor. Furthermore, a bias voltage is applied to the capacitive sensor via a high impedance component. ... Infineon Technologies Ag

09/28/17 / #20170276715

Transistor bridge failure test

A driver circuit arrangement for driving a transistor bridge, which includes at least a first half-bridge composed of a low-side transistor and a high-side transistor, is described herein. In accordance with one example of the description, the circuit includes a current source and a detection circuit. ... Infineon Technologies Ag

09/28/17 / #20170276646

Apparatus for determining a characteristic of a fluid

Embodiments of the present disclosure provide an apparatus for determining a characteristic of a fluid. The apparatus may include a device configured to determine a hydrodynamic pressure of the fluid. ... Infineon Technologies Ag

09/28/17 / #20170276520

Electric shield between magneto-resistive sensor elements

Embodiments relate to an integrated circuit including a magneto-resistive stack of ferromagnetic and non-magnetic layers formed on a common substrate. The integrated circuit includes at least a first magneto-resistive sensor element provided by a first section of the magneto-resistive stack, at least a second magneto-resistive sensor element provided by a separate second section of the magneto-resistive stack, and a shield element provided by a separate third section of the magneto-resistive stack between the first and the second section. ... Infineon Technologies Ag

09/28/17 / #20170275159

Molded cavity package with embedded conductive layer and enhanced sealing

A base plate with a first side having an elevated portion, a recessed portion laterally surrounding the elevated portion, and a vertical face extending from the recessed portion to the elevated portion is provided. At least a part of the vertical face is covered with a metal layer. ... Infineon Technologies Ag

09/21/17 / #20170272879

Glitch detection and method for detecting a glitch

System and method for detecting a glitch is disclosed. An embodiment comprises increasing a bias voltage of a first capacitor, sampling an input signal of a first plate of the first capacitor with a time period, mixing the input signal with the sampled input signal, and comparing the mixed signal with a reference signal.. ... Infineon Technologies Ag

09/21/17 / #20170271446

Method of manufacturing semiconductor devices with transistor cells and semiconductor device

First reinforcement stripes are formed on a process surface of a base substrate. A first epitaxial layer covering the first reinforcement stripes is formed on the first process surface. ... Infineon Technologies Ag

09/21/17 / #20170271313

Semiconductor devices for integration with light emitting chips and modules thereof

A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. ... Infineon Technologies Ag

09/21/17 / #20170271298

Method for producing a chip assemblage

One aspect of the invention relates to a method for producing a chip assemblage. Two or more chip assemblies are produced in each case by cohesively and electrically conductively connecting an electrically conductive first compensation lamina to a first main electrode of a semiconductor chip. ... Infineon Technologies Ag

09/21/17 / #20170271268

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.. ... Infineon Technologies Ag

09/21/17 / #20170271260

Semiconductor device including a passive component formed in a redistribution layer

A device includes a semiconductor chip, a plurality of planar metallization layers arranged over a main surface of the semiconductor chip, and a passive component including windings, wherein each of the windings is formed in one of the plurality of planar metallization layers.. . ... Infineon Technologies Ag

09/21/17 / #20170271246

Leadframe leads having fully plated end faces

A semiconductor device includes a leadframe, a semiconductor die attached to the leadframe, and an encapsulation material encapsulating the semiconductor die and a portion of the leadframe. The leadframe includes a first main face and a second main face opposite to the first main face. ... Infineon Technologies Ag

09/21/17 / #20170271245

Direct selective adhesion promotor plating

A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames have a die paddle and a plurality of leads extending away from the die paddle. ... Infineon Technologies Ag

09/21/17 / #20170271229

Spatially selective roughening of encapsulant to promote adhesion with functional structure

An electronic component which comprises an electrically conductive carrier, an electronic chip on the carrier, an encapsulant encapsulating at least part of at least one of the carrier and the electronic chip, and a functional structure covering a surface portion of the encapsulant, wherein at least part of the covered surface portion of the encapsulant is spatially selectively roughened.. . ... Infineon Technologies Ag

09/21/17 / #20170271216

Method of manufacturing an integrated circuit substrate

A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. ... Infineon Technologies Ag

09/21/17 / #20170270978

Memory arrangement and method for reading a memory cell of a memory

According to one embodiment, a memory arrangement is described a memory including a memory cell and a sense amplifier coupled to the memory cell having a node whose potential depends on the difference between a current through the memory cell and a reference current, a detection circuit configured to generate a signal representing whether the current through the memory cell is above or below the reference current based on the potential of the node and a limitation circuit configured to receive the signal and to limit the change of the potential of the node caused by the difference between the current through the memory cell and the reference current in response to the signal.. . ... Infineon Technologies Ag

09/21/17 / #20170269171

Apparatus for redundantly measuring a magnetic field

In various embodiments, a hall sensor arrangement for the redundant measurement of a magnetic field may include a first hall sensor on a top side of a first semiconductor substrate; a second hall sensor on a top side of a second semiconductor substrate; a carrier having a top side and an underside; wherein the first hall sensor is arranged on the top side of the carrier and the second hall sensor is arranged on the underside of the carrier; and wherein the measuring area of the first hall sensor projected perpendicularly onto the carrier at least partly overlaps the measuring area of the second hall sensor projected perpendicularly onto the carrier.. . ... Infineon Technologies Ag

09/21/17 / #20170269166

System and method for a built-in-self-test of a battery

According to an embodiment, a system includes a switching regulator and an electrochemical storage test circuit. The switching regulator is coupled to a power supply input and configured to supply a regulated voltage to a regulated supply terminal that is configured to be coupled to a device. ... Infineon Technologies Ag

09/21/17 / #20170268991

Sensing systems and methods using a coupling structure

A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. ... Infineon Technologies Ag

09/14/17 / #20170264323

Mixing stage, modulator circuit and a current control circuit

A mixing stage includes a first modulation stage that receives an input signal from a first common node of the mixing stage, a first local oscillator input that receives a local oscillator signal, and a first modulation signal output adapted to provide a first modulated signal. A second modulation stage of the mixing stage includes a second input that receives a phase inverted representation of the input signal from a second common node of the mixing stage, a second local oscillator input that receives the local oscillator signal, and a second modulation signal output adapted to provide a second modulated signal. ... Infineon Technologies Ag

09/14/17 / #20170263719

Method of manufacturing a semiconductor structure and semiconductor structure

A method for manufacturing a semiconductor structure is provided, which may include: forming a p-doped region adjacent to an n-doped region in a substrate; carrying out an anodic oxidation to form an oxide layer on a surface of the substrate, wherein the oxide layer in a first portion of the surface extending along the n-doped region has a greater thickness than the oxide layer in a second portion of the surface extending along the p-doped region.. . ... Infineon Technologies Ag

09/14/17 / #20170263712

Wide bandgap semiconductor device including transistor cells and compensation structure

A semiconductor device includes transistor cells in a semiconductor portion, wherein the transistor cells are electrically connected to a gate metallization, a source electrode and a drain electrode. In one example, the semiconductor device further includes a doped region in the semiconductor portion. ... Infineon Technologies Ag

09/14/17 / #20170263490

Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck

According to various embodiments, a workpiece planarization arrangement may include: a chuck including at least one portion configured to support one or more workpieces; and a planarization tool configured to planarize the at least one portion of the chuck and to planarize one or more workpieces on the at least one portion of the chuck; wherein the at least one portion of the chuck includes at least one of particles, pores and/or a polymer.. . ... Infineon Technologies Ag

09/14/17 / #20170263481

Adapter tool configured to be attached to a loadport of a wafer handling system and wafer handling system with such an adapter tool

An adapter tool configured to be attached to a loadport of a wafer handling system includes a support member and first and second guiding elements attached to the support member and being juxtaposed to each other. The first guiding element is arranged for placing a first wafer magazine, and the second guiding element is arranged for placing a second wafer magazine. ... Infineon Technologies Ag

09/14/17 / #20170263480

Arrangement having a plurality of chips and a chip carrier, and a processing arrangement

In various embodiments, an arrangement is provided. The arrangement may include a plurality of chips; a chip carrier carrying the plurality of chips, the chip carrier including a chip carrier notch; and encapsulation material encapsulating the chip carrier and filling the chip carrier notch; wherein the outer circumference of the encapsulation material is free from a recess.. ... Infineon Technologies Ag

09/14/17 / #20170263440

Method of reducing defects in an epitaxial layer

A method of reducing defects in an epitaxial layer. The method includes forming one or more barrier structures within a peripheral edge region of a wafer substrate, and forming an epitaxial layer over a surface of the wafer substrate.. ... Infineon Technologies Ag

09/14/17 / #20170261565

Calibration of a current sensor

An apparatus for calibrating a sensor unit is provided, wherein the sensor unit includes a sensor housing, a first magnetic sensor and a second magnetic sensor, wherein the first magnetic sensor is adapted to detect magnetic field components in a first direction, wherein the second magnetic sensor is adapted to detect magnetic field components in a second direction, wherein the first direction is not parallel to the second direction. The apparatus further includes a magnetic field generating device, which is adapted so that at least one magnetic field acts on the sensor unit, wherein the calibration of the sensor unit can be carried out with the aid of responses of the first magnetic sensor and of the second magnetic sensor to the magnetic field. ... Infineon Technologies Ag

09/14/17 / #20170261306

Extension sensor and reduction of a drift of a bridge circuit caused by an extension

A circuit comprise a semiconductor substrate of an integrated circuit, comprising at least two resistors arranged in different orientations in, on or at the semiconductor substrate. The resistance value of the respective one of the resistors is substantially independent of an acting magnetic field. ... Infineon Technologies Ag

09/14/17 / #20170260040

Mems device and mems vacuum microphone

In accordance with an embodiment, a mems device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.. ... Infineon Technologies Ag

09/14/17 / #20170259354

Method for planarizing one or more workpieces, a workpiece planarization arrangement, a chuck and a replaceable workpiece-support for a chuck

According to various embodiments, a workpiece planarization arrangement may include: a chuck including a support carrier; and a workpiece-support replaceably mounted on the support carrier; and a planarization tool configured to planarize the at least one portion of the workpiece-support and to planarize one or more workpieces on the at least one portion of the workpiece-support.. . ... Infineon Technologies Ag

09/07/17 / #20170257945

Substrate and multiple substrate, and method for producing thereof

A substrate includes a ceramic layer, a metal layer fixed in a planar manner on a surface side of the ceramic layer and a cutout arranged in an edge region of the metal layer. The cutout in the edge region codes information. ... Infineon Technologies Ag

09/07/17 / #20170257917

Modulation engine for dimming control

A modulation engine for a light-emitting-diode (led) driver is described that includes an output port, a charge current source, a discharge current source, and an output control unit. The output control unit is configured to generate a modulation signal (e.g., a pulse-width-modulation signal) at the output port by at least alternating, based on a duty cycle of the modulation signal, between coupling the charge current source to the output port and the discharge current source to the output port to linearly shape the charge at the output port in accordance with the duty cycle.. ... Infineon Technologies Ag

09/07/17 / #20170257120

Processing a data word

A method is proposed for processing a data word, in which the data word comprises a first partial data word and a second partial data word, in which first checkbits are defined for the first partial data word, wherein the first partial data word and the first checkbits form a first codeword, in which second checkbits are defined for the second partial data word, wherein the second partial data word and the second checkbits form a second codeword, in which third checkbits are defined for the data word, wherein at least (i) the data word, (ii) a linking of the first checkbits with the second checkbits, and (iii) the third checkbits are parts of a third codeword.. . ... Infineon Technologies Ag

09/07/17 / #20170257108

Spectrally shaped random signal

An apparatus (100) comprises a signal generator (101) that is set up to produce a digital random signal (191). The apparatus (100) also comprises at least one filter element (102, 121, 122) that is set up to apply a high pass filter and a low pass filter to the digital random signal (191) in order to produce a spectrally shaped random signal (112). ... Infineon Technologies Ag

09/07/17 / #20170257093

System and method for high-ohmic circuit

A high-ohmic circuit includes a plurality of high-ohmic branches coupled in parallel between a first node and a second node. Each of the plurality of high-ohmic branches includes a first plurality of series connected resistive elements forming a first series path from the first node to the second node, each of the first plurality of series connected resistive elements comprising a first diode-connected transistor. ... Infineon Technologies Ag

09/07/17 / #20170257037

Power semiconductor package and applications

A power semiconductor package includes a reference voltage terminal, a supply voltage terminal, a phase terminal, a first power transistor and a second power transistor. The first power transistor and the second power transistor are connected in series and form a low side switch and a high side switch of a half bridge circuit.. ... Infineon Technologies Ag

09/07/17 / #20170257025

Switched-mode power converter with cascode circuit

A switched-mode power converter includes an inductive storage element and a cascode circuit. The cascode circuit includes a double-gate field effect transistor. ... Infineon Technologies Ag

09/07/17 / #20170256939

Reverse current protection for a switching unit

In one example, a circuit includes a switching unit including a first node, a second node, a control node, and a body. The switching unit is configured to selectively couple the first node of the switching unit to the second node of the switching unit in response to receiving a control signal at a control input of the switching unit. ... Infineon Technologies Ag

09/07/17 / #20170256641

Semiconductor device comprising a first gate electrode and a second gate electrode

A semiconductor device includes a transistor. The transistor includes a source region and a drain region disposed adjacent to a first main surface of a semiconductor substrate, a first gate electrode and a second gate electrode, the first gate electrode being disconnected from the second gate electrode. ... Infineon Technologies Ag

09/07/17 / #20170256515

Semiconductor device including antistatic die attach material

A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. ... Infineon Technologies Ag

09/07/17 / #20170256509

Method of manufacturing molded semiconductor packages having an optical inspection feature

A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. ... Infineon Technologies Ag

09/07/17 / #20170256472

Manufacturing a package using plateable encapsulant

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.. . ... Infineon Technologies Ag

09/07/17 / #20170256437

Integrated circuit and method of forming an integrated circuit

An integrated circuit includes a first trench disposed in a semiconductor material, wherein a width of the first trench in an upper portion of the first trench adjacent to a surface of the semiconductor material is smaller than a width of the first trench in a lower portion of the first trench, the lower portion being disposed within the semiconductor material, each width being measured in a plane parallel to a surface of the semiconductor material, each width denoting a distance between inner faces of remaining semiconductor material portions or between outer faces of a filling disposed in the first trench, or between an inner face of a remaining semiconductor material portion and an outer face of a filling disposed in the first trench.. . ... Infineon Technologies Ag

09/07/17 / #20170256315

Resistive memory transition monitoring

A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.. ... Infineon Technologies Ag

09/07/17 / #20170254671

Shaft-integrated angle sensing device for e-bike and e-bike comprising such device

A sensor arrangement and an e-bike that includes the sensor arrangement are provided. The sensor arrangement includes a rotatable driving shaft for an e-bike extending along a rotation axis and includes a bore extending from a first end face of the rotatable driving shaft along the rotation axis, a magnet module arranged within the bore and coupled to the rotatable driving shaft, the magnet module configured to generate a magnetic field within the bore, and at least one sensing element configured to sense a rotation of the magnetic field in response to rotation of the rotatable driving shaft.. ... Infineon Technologies Ag

08/31/17 / #20170251194

Apparatus for generating a three-dimensional color image and a method for producing a three-dimensional color image

An apparatus comprises an input interface for receiving a color image of at least an object and a low resolution depth image of at least the object. The apparatus further comprises an image processing module configured to produce data for generating a three-dimensional color image based on a first color pixel image data of a first color pixel and a first derived depth pixel image data of a first derived depth pixel. ... Infineon Technologies Ag

08/31/17 / #20170250961

Method for communicating data from a sensor device to an electronic control unit, a sensor device and an electronic control unit

A method for communicating data from a sensor device to an electronic control unit using a single-wire bi-directional communication protocol includes providing a first key of the electronic control unit to the sensor device, encrypting sensor data of the sensor device using the first key to determine encrypted data, and transmitting the encrypted data from the sensor device to the electronic control unit.. . ... Infineon Technologies Ag

08/31/17 / #20170250271

Semiconductor device having an active trench and a body trench

A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main surface, an active trench at the first main surface extending into the drift region, a gate insulating layer at sidewalls and a bottom side of the active trench, a gate conductive layer in the active trench, a source region in the body region, and adjacent to the active trench, a body trench at the first main surface extending into the drift region, the body trench being adjacent to the body region and to the drift region, an insulating layer at sidewalls and at a bottom side of the body trench, the insulating layer being asymmetric with respect to an axis extending perpendicular to the first main surface at a center of the body trench, and a conductive layer in the body trench.. . ... Infineon Technologies Ag

08/31/17 / #20170250152

Chip embedding package with solderable electric contact

A package comprising an electronic chip, a laminate-type encapsulant at least partially encapsulating the electronic chip, a wiring structure extending from the electronic chip up to a contact pad, and a completely galvanically formed solderable exterior electric contact electrically coupled with the electronic chip by being arranged on the contact pad.. . ... Infineon Technologies Ag

08/31/17 / #20170250125

Semiconductor device including a clip

A semiconductor device includes a lead frame including a die paddle and a lead, a semiconductor chip, and a clip. The semiconductor chip has a first side and a second side opposite to the first side. ... Infineon Technologies Ag

08/31/17 / #20170250112

Semiconductor device and a method for forming a semiconductor device

A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. ... Infineon Technologies Ag

08/31/17 / #20170249225

Microcontroller and method for modifying a transmission signal

A microcontroller includes a signal interface for transmitting signals. The microcontroller further includes an error injection module. ... Infineon Technologies Ag

08/31/17 / #20170248655

Microcontroller and method for testing a microcontroller

A microcontroller includes a data memory configured to store test signal data. The microcontroller further includes a signal generator configured to process the test signal data in order to provide at least one test signal. ... Infineon Technologies Ag

08/31/17 / #20170248646

Method and device for short circuit detection in power semiconductor switches

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.. ... Infineon Technologies Ag

08/31/17 / #20170248645

Method and device for short circuit detection in power semiconductor switches

Devices and methods are provided, which detect a short circuit condition related to a semiconductor switch. A short circuit condition may be determined when a control signal of the switch exceeds a first reference, and a change of load current of the switch exceeds a second reference.. ... Infineon Technologies Ag

08/31/17 / #20170247245

Microelectromechanical device and method for forming a microelectromechanical device

A microelectromechanical device may include: a semiconductor carrier; a microelectromechanical element disposed in a position distant to the semiconductor carrier; wherein the microelectromechanical element is configured to generate or modify an electrical signal in response to a mechanical signal and/or is configured to generate or modify a mechanical signal in response to an electrical signal; at least one contact pad, which is electrically connected to the microelectromechanical element for transferring the electrical signal between the contact pad and the microelectromechanical element; and a connection structure which extends from the semiconductor carrier to the microelectromechanical element and mechanically couples the microelectromechanical element with the semiconductor carrier.. . ... Infineon Technologies Ag

08/31/17 / #20170247244

Microelectromechanical system and a method of manufacturing a microelectromechanical system

A microelectromechanical system and a method for manufacturing a microelectromechanical system including: a substrate; a microelectromechanical device including: a diaphragm configured as a transducer to convert between electrical energy and mechanical energy and an electrode coupled to the diaphragm; a support region mechanically coupling the microelectromechanical device to the substrate, wherein the support region is confined to a first continuous region spanning an arc of less than 90 degrees around a perimeter of the diaphragm; and a second continuous region free from mechanical support of the microelectromechanical device to the substrate, the second continuous region spanning the perimeter of the diaphragm from one end of the support region to the other end of the support region; wherein the support region cantilevers the microelectromechanical device and the second continuous region mechanically decouples the microelectromechanical device from the substrate.. . ... Infineon Technologies Ag

08/31/17 / #20170246844

Chip card substrate and method of forming a chip card substrate

A chip card substrate is provided, which includes a plurality of layers. The plurality of layers includes a first polymer layer including a first polymer material, a second polymer layer disposed over the first polymer layer and a second polymer material different from the first polymer material. ... Infineon Technologies Ag

08/24/17 / #20170245359

Pcb based semiconductor package with impedance matching network elements integrated therein

A semiconductor package includes a metal baseplate having a die attach region and a peripheral region, a transistor die having a reference terminal attached to the die attach region and an rf terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the peripheral region and a second side facing away from the baseplate. The multilayer circuit board includes two embedded electrically conductive layers that are separated from the first and second sides by layers of composite fiber, and an embedded dielectric layer disposed between the two embedded electrically conductive layers. ... Infineon Technologies Ag

08/24/17 / #20170245034

System and method for signal read-out using source follower feedback

An embodiment amplifier circuit includes a pair of subcircuits that includes a first subcircuit and a second subcircuit, each of which includes a buffer amplifier and a feedback circuit that includes a feedback capacitor. The amplifier circuit also includes a pair of output terminals. ... Infineon Technologies Ag

08/24/17 / #20170244922

Charge conservation in pixels

Representative implementations of devices and techniques provide conservation of charge in a pixel. Charge in the pixel may be alternately stored in a first gate capacitance of the pixel and a second gate capacitance of the pixel. ... Infineon Technologies Ag

08/24/17 / #20170243969

Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device

First and second cell trench structures extend from a first surface into a semiconductor substrate. The first cell trench structure includes a first buried electrode and a first insulator layer between the first buried electrode and a semiconductor mesa separating the first and second cell trench structures. ... Infineon Technologies Ag

08/24/17 / #20170243963

Producing a semiconductor device by epitaxial growth

A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (zpn). ... Infineon Technologies Ag

08/24/17 / #20170243940

Semiconductor devices and methods for forming a semiconductor device

A method for forming a semiconductor device includes incorporating dopants of a first conductivity type into a nearby body region portion of a semiconductor substrate having a base doping of the first conductivity type. The incorporation of the dopants of the first conductivity type is masked by a mask structure at at least part of an edge region of the semiconductor substrate. ... Infineon Technologies Ag

08/24/17 / #20170243828

Semiconductor device and method for producing a semiconductor device

A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided.. ... Infineon Technologies Ag

08/24/17 / #20170243795

Integrated circuit substrate and method for manufacturing the same

A method of manufacturing a wafer. The method includes providing a wafer and testing the wafer. ... Infineon Technologies Ag

08/24/17 / #20170243794

Method of manufacturing an integrated circuit substrate

A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. ... Infineon Technologies Ag

08/24/17 / #20170243793

System and method for a microfabricated fracture test structure

According to an embodiment, a micro-fabricated test structure includes a structure mechanically coupled between two rigid anchors and disposed above a substrate. The structure is released from the substrate and includes a test layer mechanically coupled between the two rigid anchors. ... Infineon Technologies Ag

08/24/17 / #20170243785

Integrated circuit substrate and method for manufacturing the same

A method of manufacturing a wafer. The method includes providing a wafer that includes a plurality of semiconductor device structures, and testing at least one of the plurality of semiconductor device structures. ... Infineon Technologies Ag

08/24/17 / #20170243747

Method for implanting ions into a semiconductor substrate and an implantation system

A method for implanting ions into a semiconductor substrate includes performing a test implantation of ions into a semiconductor substrate. The ions of the test implantation are implanted with a first implantation angle range over the semiconductor substrate. ... Infineon Technologies Ag

08/24/17 / #20170242948

Sensitivity analysis systems and methods using local gradients

A sensitivity analysis arrangement using local gradients is disclosed. The arrangements include a design of experiments component, a simulation/measurement component and an analysis component. ... Infineon Technologies Ag

08/24/17 / #20170242937

Sensitivity analysis systems and methods using entropy

A sensitivity analysis arrangement using entropy is disclosed. The arrangement includes a design of experiments component, a simulation component and an entropy controller. ... Infineon Technologies Ag

08/24/17 / #20170242709

Digital sensor system

A system may include a digital sensor system including a sensor element and a digital interface. The digital interface may provide a wake-up signal based on a sensing action being performed by the sensor element after a predefined event is detected by the digital sensor system. ... Infineon Technologies Ag

08/24/17 / #20170242137

Electronic device substrate and method for manufacturing the same

A method for use in manufacturing a plurality of electronic devices from a workpiece. The method includes compiling a set of data records in a data file, wherein each data record represents information uniquely associated with a respective electronic device to be manufactured from the workpiece. ... Infineon Technologies Ag

08/24/17 / #20170241812

Using a variable switching threshold for providing an output

A magnetic circuit may include a magnetic sensor. The magnetic sensor may determine an adjustment factor associated with calculating a variable switching threshold. ... Infineon Technologies Ag

08/24/17 / #20170241803

Magnetic position sensor

A device includes a permanent magnetic material extending along a path, a first magnetic angle sensor configured to output at least a first signal and being positioned remotely from the material, and a second magnetic angle sensor configured to output at least one second signal and being positioned remotely from the material and from the first magnetic angle sensor. Based on the at least one first signal and the at least one second signal, a relative positioning of the first magnetic angle sensor and the second magnetic angle sensor with respect to the material in parallel to the path is determined. ... Infineon Technologies Ag

08/24/17 / #20170241802

Magnet arrangement and sensor device

Magnet arrangements, sensor devices and corresponding methods are provided comprising a first magnet portion and a second magnet portion. The first magnet portion is spaced apart from the second magnet portion, and the second magnet portion comprises a bore. ... Infineon Technologies Ag

08/17/17 / #20170238107

Mems microphone, apparatus comprising a mems microphone and method for fabricating a mems microphone

A mems microphone and a method for manufacturing a mems microphone are disclosed. Embodiments of the invention provide a mems microphone including a mems microphone structure having at least one counter electrode structure and a diaphragm structure deflectable with respect to the counter electrode structure and a thermocouple arranged at the mems microphone structure.. ... Infineon Technologies Ag

08/17/17 / #20170237573

Data processing devices and methods for reconstructing a puf value

A data processing device includes a physical unclonable function value source which is set up to provide a reference physical unclonable function value and a plurality of subsequent physical unclonable function values, the reference physical unclonable function value and each subsequent physical unclonable function value having a multiplicity of binary components, a determination device which is set up to determine a set of components, the value of which is identical in the plurality of subsequent physical unclonable function values, and a physical unclonable function reconstruction device which is set up to reconstruct the reference physical unclonable function value from the subsequent physical unclonable function values assuming that the values of the determined components in the subsequent physical unclonable function value match the values of the determined components in the reference physical unclonable function value.. . ... Infineon Technologies Ag

08/17/17 / #20170237438

Level shifter

Voltage level shifters are devices that resolve mixed voltage incompatibility between different parts of a system that operate in multiple voltage domains. Voltage level shifters are typically also an important circuit component and are used e.g. ... Infineon Technologies Ag

08/17/17 / #20170237426

Device and method for internal reset signal generation

Devices and methods for generating an internal reset signal are explained. A first circuit (11) generates a first reset signal (r1), and a second circuit (12) generates a second reset signal (r2). ... Infineon Technologies Ag

08/17/17 / #20170237164

System and method for a beamformer

In accordance with an embodiment a beamforming circuit having a radio frequency (rf) front end and a plurality of beamforming delay circuits coupled to the rf front end. Each of the plurality of beamforming delay circuits includes a common delay circuit and a plurality of individual delay circuits coupled to the common delay circuit. ... Infineon Technologies Ag

08/17/17 / #20170236931

Semiconductor device comprising a temperature sensor, temperature sensor and method of manufacturing a semiconductor device comprising a temperature sensor

A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source contact, the source contact including a first and second source contact portion, and a gate electrode in a gate trench in the first main surface adjacent to a body region. ... Infineon Technologies Ag

08/17/17 / #20170236801

Semiconductor devices and processing methods

Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness.. . ... Infineon Technologies Ag

08/17/17 / #20170236776

Semiconductor device including an antenna

A semiconductor device includes a semiconductor chip and a redistribution layer on a first side of the semiconductor chip. The redistribution layer is electrically coupled to the semiconductor chip. ... Infineon Technologies Ag

08/17/17 / #20170236714

Method for removing crystal originated particles from a crystalline silicon body using an etch process

A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes: increasing a surface area of at least one of the first and second surfaces by an etch process; and oxidizing the increased surface area at a temperature of at least 1000° c. And for a duration of at least 20 minutes.. ... Infineon Technologies Ag

08/17/17 / #20170234968

Radar employing preacquisition ramps

Techniques for radar detection based on preacquisition ramps are discussed. One example system comprises transmitter circuitry, receiver circuitry, and one or more processors. ... Infineon Technologies Ag

08/17/17 / #20170234911

Method of sensing current flowing in a power module

A method of sensing current flowing in a power module is provided. The module includes a first substrate having a metallized side, a second substrate spaced apart from the first substrate and having a metallized side facing the metallized side of the first substrate, and a semiconductor die interposed between the first and second substrates. ... Infineon Technologies Ag

08/17/17 / #20170234822

Sensor arrangement for particle analysis and a method for particle analysis

According to various embodiments, a sensor arrangement for particle analysis may include: a base electrode configured to generate an electrical field for particle attraction; a support layer disposed over the base electrode; a sensor array disposed over the support layer and including or formed from a plurality of sensor elements, wherein each sensor element of the plurality of sensor elements is configured to generate or modify an electrical signal in response to a particle at least one of adsorbed to and approaching the sensor element; and an electrical contact structure may include or be formed from a plurality of contact lines, wherein each contact line of the plurality of contact lines is electrically connected to a respective sensor element of the plurality of sensor elements, such that each sensor element of the plurality of sensor elements is addressable via the contact structure.. . ... Infineon Technologies Ag

08/17/17 / #20170234700

Tapered magnet

A magnet for a magnetic angle sensing system, the magnet having a tapered geometry in parallel with a rotation axis of the magnet, and configured to be mounted to a rotatable member such that a thin end of the magnet is closer to a magnetic field sensing element located on the rotation axis than a broad end of the magnet.. . ... Infineon Technologies Ag

08/10/17 / #20170229956

Charge pump circuit and method for operating a charge pump circuit

A charge pump circuit is provided, in which a charge pump is supplied with a temperature-dependent bias current, in particular a bias current that decreases with temperature.. . ... Infineon Technologies Ag

08/10/17 / #20170229539

Method for forming a semiconductor device and a semiconductor device

A method for forming a semiconductor device includes incorporating first dopant atoms of a first conductivity type into a semiconductor substrate to form a first doping region of the first conductivity type. Further, the method includes forming an epitaxial semiconductor layer on the semiconductor substrate and incorporating second dopant atoms of a second conductivity type before or after forming the epitaxial semiconductor layer to form a second doping region including the second conductivity type adjacent to the first doping region so that a pn-junction is located between the first doping region and the second doping region. ... Infineon Technologies Ag

08/10/17 / #20170229537

Mechanical stress-decoupling in semiconductor device

According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device. The first trench is a mechanical decoupling trench between a first region of an eventual semiconductor device and a second region thereof. ... Infineon Technologies Ag

08/10/17 / #20170229399

Method of galvanic plating assisted by a current distribution layer

The method comprises providing a plurality of electronic devices, embedding the electronic devices in an encapsulation layer, forming vias into the encapsulation layer, the vias extending from a main face of the encapsulation layer to the electronic devices, and depositing a metallic layer onto the encapsulation layer including the vias by galvanic plating, the method further comprising providing a current distribution layer for effecting a distributed growth of the metallic material during the galvanic plating.. . ... Infineon Technologies Ag

08/10/17 / #20170227613

Magnetic sensor device and method for a magnetic sensor device having a magneto-resistive structure

An embodiment relates to a magnetic sensor device (500) comprising a magneto-resistive structure (501). The magneto-resistive structure (501) comprises a magnetic free layer (502) configured to spontaneously generate a closed flux magnetization pattern in the free layer (502). ... Infineon Technologies Ag

08/10/17 / #20170227597

Semiconductor chip with fracture detection

A semiconductor chip includes a substrate, an integrated circuit, an indentation of the substrate, a conductor track, and also a crossover between the indentation and the conductor track. Detection of a test signal fed into the conductor track is made possible in this way. ... Infineon Technologies Ag

08/03/17 / #20170223450

System and method for acoustic transducer supply

. . According to an embodiment, a method of operating an acoustic device includes buffering, by a buffer circuit, a first electrical signal from an acoustic transducer to produce a second electrical signal, receiving a feedback signal at a supply circuit, and comparing the feedback signal to a first threshold. The feedback signal is based on the first electrical signal. ... Infineon Technologies Ag

08/03/17 / #20170222738

Methods and apparatuses for speed and/or position sensing

Embodiments relate to machines comprising a movable part, transceiver circuitry configured to transmit a radio signal towards the movable part and to receive a reflection of the radio signal from the movable part, evaluation circuitry configured to determine a position or a speed of the movable part based on at least the received radio signal. A distance between an antenna of the transceiver circuitry and the movable part is less than 5 cm.. ... Infineon Technologies Ag

08/03/17 / #20170222657

Hybrid digital/analog noise shaping in the sigma-delta conversion

An analog/digital converter (adc) includes an analog stage with at least one first sigma-delta modulator and includes a digital stage with at least one second sigma-delta modulator. The analog stage is configured for outputting a digital signal to the digital stage that is indicative of a noise contribution of the at least one first sigma-delta modulator. ... Infineon Technologies Ag

08/03/17 / #20170222585

Intelligent detection unit (idu) to detect the position of a rotor controlled by pulse modulation

A motor control circuit for controlling an electric motor may include at least one switching device configured to receive, from a pulse modulation device, a pulse modulated signal and output, based on the pulse modulated signal and to the electric motor, a current. In some examples, a frequency of the pulse modulated signal is below a threshold frequency. ... Infineon Technologies Ag

08/03/17 / #20170222137

Xmr monocell sensors, systems and methods

Embodiments relate to magnetoresistive (xmr) sensors. In an embodiment, an xmr stack structure is configured to form two different xmr elements that can be coupled to form a locally differential wheatstone bridge. ... Infineon Technologies Ag

08/03/17 / #20170221987

Semiconductor device and a method for forming a semiconductor device

A method for forming a semiconductor device includes forming an oxide layer on a semiconductor substrate. A first portion of the oxide layer forms a gate oxide of a transistor structure. ... Infineon Technologies Ag

08/03/17 / #20170221885

Electric circuit including a semiconductor device with a first transistor, a second transistor and a control circuit

An electric circuit includes a semiconductor device. The semiconductor device includes a first transistor and a second transistor in a common semiconductor substrate. ... Infineon Technologies Ag

08/03/17 / #20170221857

Attaching chip attach medium to already encapsulated electronic chip

A method of manufacturing a package which comprises encapsulating at least part of an electronic chip by an encapsulant, subsequently covering a part of the electronic chip with a chip attach medium, and attaching the encapsulated electronic chip on a chip carrier via the chip attach medium.. . ... Infineon Technologies Ag

08/03/17 / #20170221842

Power semiconductor device load terminal

A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. ... Infineon Technologies Ag

08/03/17 / #20170221802

Semiconductor device packaging assembly, lead frame strip and unit lead frame with molding compound channels

A semiconductor device packaging assembly includes a lead frame strip having a plurality of unit lead frames. Each of the unit lead frames includes a periphery structure connected to adjacent ones of the unit lead frames, a die paddle inside of the periphery structure, a plurality of leads extending between the periphery structure and the die paddle, and a molding compound channel in the periphery structure configured to guide liquefied molding material onto the periphery structure.. ... Infineon Technologies Ag

08/03/17 / #20170219382

Sensor package

A device for detecting an object is suggested comprising a magnetic field sensor, a magnet that is arranged to rotate in a vicinity of the magnetic field sensor, wherein the object is movable in the vicinity of the magnet to affect the rotation of the magnet, wherein the magnetic field sensor is arranged to detect a magnetic field of the magnet. Also, a system comprising such device is provided.. ... Infineon Technologies Ag

08/03/17 / #20170217765

System and method for a mems transducer

According to an embodiment, a microelectromechanical systems (mems) transducer includes a substrate with a first cavity that passes through the substrate from a backside of the substrate. The mems transducer also includes a perforated first electrode plate overlying the first cavity on a topside of the substrate, a second electrode plate overlying the first cavity on the topside of the substrate and spaced apart from the perforated first electrode plate by a spacing region, and a gas sensitive material in the spacing region between the perforated first electrode plate and the second electrode plate. ... Infineon Technologies Ag

07/27/17 / #20170214746

Car2x communication system, apparatus and method

Apparatuses, systems and methods for communicating between a first device and a second device are provided. Distance control circuitry including at least one transceiver is used to transmit and receive distance control signals and to detect a distance between the first device and a remote object based on a transmitted distance control signal and a received distance control signal reflected by the remote object. ... Infineon Technologies Ag

07/27/17 / #20170214629

Communication systems and methods having reduced frame duration

A transmitter arrangement using randomization is disclosed. The arrangement includes one or more randomizers, a measure component and a frame select component. ... Infineon Technologies Ag

07/27/17 / #20170213800

Method of manufacturing a semiconductor package having a semiconductor chip and a microwave component

A method of manufacturing a semiconductor device package includes placing a semiconductor chip on a carrier, covering the semiconductor chip with an encapsulation material to form an encapsulation body, providing a microwave component having at least one electrically conducting wall structure integrated in the encapsulation body, and forming an electrical interconnect configured to electrically couple the semiconductor chip and the microwave component.. . ... Infineon Technologies Ag

07/27/17 / #20170213796

Electronic chip inspection by backside illumination

An apparatus for inspecting a plurality of electronic chips singularized from a wafer, wherein the apparatus comprises an electromagnetic radiation source arranged and configured for illuminating at least part of a first main surface of the singularized wafer with electromagnetic radiation, and a detection unit configured for detecting electromagnetic radiation from a side facing a second main surface of the singularized wafer and opposing the first main surface.. . ... Infineon Technologies Ag

07/27/17 / #20170213783

Multi-chip semiconductor power package

A semiconductor package is disclosed. The semiconductor package includes an electrically conducting carrier having a mounting surface, a first level first semiconductor power device having a first load electrode mounted over the mounting surface of the electrically conducting carrier and having a second load electrode opposite the first electrode. ... Infineon Technologies Ag

07/27/17 / #20170212036

Integrated photo-acoustic gas sensor module

A photo-acoustic gas sensor is disclosed. The photo-acoustic gas sensor includes a substrate, a light emitter unit supported by the substrate, the light emitter unit including a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit supported by the substrate, the detector unit including a microphone, wherein the beam of light pulses traverses an area intended to accommodate the gas and the microphone can receive a signal oscillating with the repetition frequency.. ... Infineon Technologies Ag

07/20/17 / #20170208684

Printed circuit boards having a dielectric layer which includes a polymer and methods of manufacturing such printed circuit boards

A printed circuit board includes an electrically conductive layer and a dielectric layer including a polymer. The polymer includes at least one of a carbon layer structure and a carbon-like layer structure.. ... Infineon Technologies Ag

07/20/17 / #20170208012

Communication systems and methods having reduced frame duration

A transmitter arrangement using randomization is disclosed. The arrangement includes one or more randomizers, a measure component and a frame select component. ... Infineon Technologies Ag

07/20/17 / #20170207874

System having plastic waveguides

The present disclosure relates to a system having a plurality of electronic devices interconnected by way of dielectric waveguides. In some embodiments, the system has a plurality of electronic devices respectively including a data element and a transceiver element. ... Infineon Technologies Ag

07/20/17 / #20170207124

Method of forming a semiconductor device

Methods of forming a semiconductor device are provided. A method includes introducing impurities into a part of a semiconductor substrate at a first surface of the semiconductor substrate by ion implantation, the impurities being configured to absorb electromagnetic radiation of an energy smaller than a bandgap energy of the semiconductor substrate. ... Infineon Technologies Ag

07/20/17 / #20170206982

Memory device and method for testing a memory device

According to one embodiment, a memory device is provided including a plurality of data word memories, a test controller configured to, for each data word memory, read a data word stored in the data word memory, check the read data word to detect an error of the memory device, determine a complementary data word of the data word, store the complementary data word in the data word memory, read the complementary data word from the data word memory and check the read complementary data word to detect an error of the memory device.. . ... Infineon Technologies Ag

07/20/17 / #20170206448

Chip card and method of forming a chip card

A chip card is provided. The chip card may include a chip card substrate and an antenna structure disposed in or over the chip card substrate, the antenna structure including a wire arranged to form a first antenna portion configured to contactlessly couple to a chip card external device and a second antenna portion configured to couple to a chip antenna, wherein the wire may include an electrically conductive material coated with an electrically insulating material, wherein the wire of the first antenna portion may be arranged such that a direction of laying progress of the wire of at least some adjacent wire portions are opposite to each other, such that the at least some adjacent wire portions may form a capacitor, wherein the isolation material of the at least some adjacent wire portions may be physically contacting each other.. ... Infineon Technologies Ag

07/20/17 / #20170205887

Wearable consumer device

According to an embodiment, a wearable device includes a frame, a first circuit board within the frame, and a display over and coupled to the first circuit board. The wearable device further includes a second circuit board electrically coupled to the first circuit board, and a mm-wave gesture sensing system mounted on the second circuit board.. ... Infineon Technologies Ag

07/20/17 / #20170205518

Gamma ray detector and method of detecting gamma rays

In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. ... Infineon Technologies Ag

07/20/17 / #20170205250

Rotation angle sensor system and method

Rotational angle sensor systems and methods are provided for detecting an angular position of a movable structure. A system may include a movable structure, a rotating member, a magnet and an angular sensor. ... Infineon Technologies Ag

07/20/17 / #20170203619

Tire parameter monitoring system

A tire parameter monitoring system comprising at least two rf repeaters, wherein each of the at least two rf repeaters is dedicated to an individual sensor unit of at least two sensor units.. . ... Infineon Technologies Ag

07/13/17 / #20170201192

System and method for a variable flow transducer

According to an embodiment, a microelectromechanical systems mems transducer includes a deflectable membrane attached to a support structure, an acoustic valve structure configured to cause the deflectable membrane to be acoustically transparent in a first mode and acoustically visible in a second mode, and an actuating mechanism coupled to the deflectable membrane. Other embodiments include corresponding systems and apparatus, each configured to perform various embodiment methods.. ... Infineon Technologies Ag

07/13/17 / #20170201019

System and method for measuring a plurality of rf signal paths

An embodiment method for signal path measurement includes providing a first signal at a common node coupled to a plurality of signal paths that each include a respective phase rotation circuit. The method also includes providing a second signal, over a first test path, to a first node coupled to a first signal path of the plurality of signal paths, providing the second signal, over a second test path, to a second node coupled to a second signal path of the plurality of signal paths, selecting a signal path from the plurality of signal paths, transmitting, over the selected signal path, one of the first signal and the second signal, and mixing the first signal with the second signal to obtain a measurement signal of the selected signal path. ... Infineon Technologies Ag

07/13/17 / #20170200795

Transistor device with segmented contact layer

Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor body and electrically connected to a contact layer. ... Infineon Technologies Ag

07/13/17 / #20170200666

Semiconductor chip package comprising laterally extending connectors

A semiconductor chip package is disclosed. The package includes a carrier, a plurality of semiconductor chips disposed on the carrier, a first encapsulation layer disposed above the semiconductor chips. ... Infineon Technologies Ag

07/13/17 / #20170199058

Apparatus and method for distinguishing data of a plurality of multidimensional magnetic field sensors

Embodiments relate to apparatus (200) and methods for distinguishing data of a plurality of multidimensional magnetic field sensors (120). A first sensor arrangement (100-1) comprises a first magnetic field source (110-1) and a first multidimensional magnetic field sensor (120-1), wherein the first magnetic field source and the first magnetic field sensor are arranged relative to one another in a first manner characteristic for the first sensor arrangement. ... Infineon Technologies Ag

07/13/17 / #20170199056

Off-center angle measurement system

A method for measuring an angular position of a rotating shaft, the method including providing a magnetic field which rotates with the shaft about an axis of rotation, positioning an integrated circuit having first and second magnetic sensing bridges within the magnetic field at a radially off-center position from the axis of rotation, the first and second magnetic sensing bridges respectively providing first and second signals representative of first and second magnetic field directions, the integrated circuit having a set of adjustment parameters for modifying attributes of the first and second signals, modifying values of the set of adjustment parameters until errors in the first and second signals are substantially minimized, and determining an angular position of the shaft based on the first and second signals.. . ... Infineon Technologies Ag

07/13/17 / #20170197481

Tire pressure sensor modules, tire pressure monitoring system, wheel, methods and computer programs for providing information related to a tire pressure

A first tire pressure sensor module is configured to provide information related to a pressure of a tire of a vehicle and comprises a pressure sensor configured to determine the information related to the pressure of the tire. The pressure module further includes a controller configured to selectively operate the tire pressure sensor module in an active state and in an inactive state, wherein an energy consumption of the tire pressure sensor module is lower in the inactive state than in the active state. ... Infineon Technologies Ag

07/06/17 / #20170195754

Sensor subassembly and method for sending a data signal

A sensor device includes a memory circuit and a transmission circuit. The transmission circuit sends a first data signal to an external receiver in a first state of a read-out-mode of the sensor device, if an oscillation period of the oscillating quantity is longer than a period threshold. ... Infineon Technologies Ag

07/06/17 / #20170195146

Passive equalizers for directional couplers

In accordance with an embodiment, a device includes a directional coupler having an input port, a transmitted port, a coupled port and an isolated port. The device also includes a first passive equalizer having a first terminal coupled to a first one of a coupled port and an isolated port of the directional coupler. ... Infineon Technologies Ag

07/06/17 / #20170194976

Detection and mitigation of non-linearity of phase interpolator

Representative implementations of devices and techniques provide non-linearity detection and mitigation for a phase interpolator of a controlled oscillator circuit, such as a pll. A bit stream output of a phase detector of the oscillator circuit is segmented according to multiple phase positions of the phase interpolator, forming a bit stream for each of the multiple phase positions. ... Infineon Technologies Ag

07/06/17 / #20170194969

Double calibration loop for random spread spectrum modulator

Representative implementations of devices and techniques provide calibration for a spread spectrum pll device modulator. A first calibration loop includes a cross correlator to correlate a sequence of random or pseudo-random signals injected into a signal path of the pll device to a phase error signal of the pll device. ... Infineon Technologies Ag

07/06/17 / #20170194956

Intelligent input for relay device containing a solid state relay

Relays can be used in a variety of applications that use a smaller signal to control a higher power load. Some example loads include motors, stadium lighting and the like. ... Infineon Technologies Ag

07/06/17 / #20170194450

Method for processing a semiconductor device and semiconductor device

A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.. . ... Infineon Technologies Ag

07/06/17 / #20170194417

Methods for producing polysilicon resistors

A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.. . ... Infineon Technologies Ag

07/06/17 / #20170194288

Multi-level chip interconnect

Representative implementations of devices and techniques provide optimized electrical performance of interconnectivity components of multi-layer integrated circuits (ic) such as chip dice, for example. Different layers of the multi-layer ic include contact terminals that may be used to connect to circuits, systems, and carriers external to the ic.. ... Infineon Technologies Ag

07/06/17 / #20170194272

Method of manufacturing a layer structure having partially sealed pores

A method of manufacturing a layer structure includes: forming a first layer over a substrate; planarizing the first layer to form a planarized surface of the first layer; and forming a second layer over the planarized surface; wherein a porosity of the first layer is greater than a porosity of the substrate and greater than a porosity of the second layer; wherein the second layer is formed by physical vapor deposition; and wherein the first layer and the second layer are formed from the same solid material.. . ... Infineon Technologies Ag

07/06/17 / #20170194205

Methods of forming semiconductor devices

In one embodiment, a method of forming a semiconductor device includes forming openings in a substrate. The method includes forming a dummy fill material within the openings and thinning the substrate to expose the dummy fill material. ... Infineon Technologies Ag

07/06/17 / #20170194200

Parallel plate waveguide for power circuits

A power semiconductor package includes a first group of semiconductor dies attached to a first side of a substrate and evenly distributed over a width of the substrate and a second group of semiconductor dies attached to the first side of the substrate and evenly distributed over the substrate width. Each die in the first and second groups has all terminals at one side which is attached to the first side of the substrate and an insulated or isolated face at a side opposite the side with the terminals. ... Infineon Technologies Ag

07/06/17 / #20170194148

Method of making a semiconductor device formed by thermal annealing

According to various embodiments, a method may include: structuring a semiconductor region to form a structured surface of the semiconductor region; disposing a dopant in the semiconductor region; and activating the dopant at least partially by irradiating the structured surface at least partially with electromagnetic radiation having at least one discrete wavelength to heat the semiconductor region at least partially.. . ... Infineon Technologies Ag

07/06/17 / #20170192224

High efficiency digital light processing engine

Systems and methods are disclosed for a pixelated light source that includes a plurality of pixels; a plurality of digital micromirrors configured to receive input light from the pixelated light source and configured to modify the input light to generate output light; and one or more controllers configured to control both the pixelated light source and the plurality of digital micromirrors to condition the output light.. . ... Infineon Technologies Ag

07/06/17 / #20170191894

Motion detection using pressure sensing

According to an embodiment, a method of sensing motion includes receiving a first signal from a first pressure sensor and a second signal from a second pressure sensor, comparing the first signal and the second signal, and characterizing a motion based on the comparing.. . ... Infineon Technologies Ag

06/29/17 / #20170187368

System and method for a switchable capacitance

In accordance with an embodiment, an adjustable capacitance circuit comprising a first branch comprising plurality of transistors having load paths coupled in series with a first capacitor. A method of operating the adjustable capacitance circuit includes programming a capacitance by selectively turning-on and turning-off ones of the plurality of transistors, wherein the load path of each transistor of the plurality of transistors is resistive when the transistor is on and is capacitive when the transistor is off.. ... Infineon Technologies Ag

06/29/17 / #20170187359

Memory device and method for operating a memory device

Devices are provided in which a metastable state can be detected in a memory device by means of a metastability detector. Corresponding information can be conveyed to a further device which, in dependence thereon, can process data from the memory device.. ... Infineon Technologies Ag

06/29/17 / #20170186838

Method of forming a semiconductor device

A method of forming a semiconductor device is provided such that a trench is formed in a semiconductor body at a first surface of the semiconductor body. Dopants are introduced into a first region at a bottom side of the trench by ion implantation. ... Infineon Technologies Ag

06/29/17 / #20170186663

Semiconductor device including a heat sink structure

A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. ... Infineon Technologies Ag

06/29/17 / #20170185883

Chip card sleeve

A chip card sleeve including a cavity for holding a chip card, and a first contact and a second contact that extend into the cavity, wherein the first contact and the second contact are electrically conductively connected to one another.. . ... Infineon Technologies Ag

06/29/17 / #20170181658

300 mhz to 3 thz electromagnetic wave sensor for determining an interstitial fluid parameter in vivo

An electromagnetic wave sensor for determining an interstitial fluid parameter in vivo comprises an implantable housing, and a sensor component hermetically encapsulated within the implantable housing. The sensor component comprises an electromagnetic wave transmitter unit configured to emit an electromagnetic wave signal in a frequency range between 300 mhz and 3 thz penetrating the implantable housing and penetrating an interstitial fluid probe volume, an electromagnetic wave receiver unit configured to receive the electromagnetic wave signal modified by the interstitial fluid probe volume, and a transceiver unit con-figured to transmit radio frequency signals related to the electromagnetic wave signal modified by the interstitial fluid probe volume. ... Infineon Technologies Ag

06/22/17 / #20170180900

Mems device

A mems device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. ... Infineon Technologies Ag

06/22/17 / #20170180018

System and method for high-speed analog beamforming

In accordance with an embodiment, a radio frequency (rf) front end system includes a first chip that includes a frequency multiplier coupled to a first input terminal. The frequency multiplier is configured to form an upscaled reference signal by upscaling in frequency an oscillating reference signal received at the first input terminal. ... Infineon Technologies Ag

06/22/17 / #20170179268

Method of manufacturing a bipolar semiconductor switch

A method for forming a bipolar semiconductor switch includes providing a semiconductor body which has a main surface, a back surface arranged opposite to the main surface, and a first semiconductor layer, and reducing a charge carrier life-time in the semiconductor body. The charge carrier life-time is reduced by at least one of indiffusing heavy metal into the first semiconductor layer, implanting protons into the first semiconductor layer and implanting helium nuclei into the first semiconductor layer, so that the charge carrier life-time has, in a vertical direction which is substantially orthogonal to the main surface, a minimum in a lower n-type portion of the first semiconductor layer where a concentration of n-type dopants is substantially close to a maximum.. ... Infineon Technologies Ag

06/22/17 / #20170179264

Bipolar transistor

A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. ... Infineon Technologies Ag

06/22/17 / #20170179224

Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers

A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20v. ... Infineon Technologies Ag

06/22/17 / #20170178993

Electronic component and methods of manufacturing the same

An electronic component which comprises an electrically insulating layer having at least one through hole, a patterned electrically conductive structure at least partially on the electrically insulating layer, an electronic chip electrically coupled with the patterned electrically conductive structure, an encapsulant at least partially encapsulating the electronic chip, and at least one electrically conductive contact structure at least partially in the at least one through hole in contact with at least part of the patterned electrically conductive structure.. . ... Infineon Technologies Ag

06/22/17 / #20170178909

A method for processing a carrier, a carrier, an electronic device and a lithographic mask

Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles.. . ... Infineon Technologies Ag

06/22/17 / #20170176494

Test pin configuration for test device for testing devices under test

A test pin for a test device for electrically contacting a device under test to be tested, wherein the test pin comprises an electrically conductive base structure for electrically conducting a test signal between the device under test and the test device, and an exchangeable electrically conductive pin tip body configured to directly contact the device under test and to be exchangeably assembled with the base structure.. . ... Infineon Technologies Ag

06/15/17 / #20170170823

Current measurement in a power semiconductor device

A semiconductor device includes a first load terminal, a second load terminal and a semiconductor body coupled to the first load terminal and the second load terminal. The semiconductor body is configured to conduct a load current along a load current path between the first load terminal and the second load terminal. ... Infineon Technologies Ag

06/15/17 / #20170170286

Semiconductor devices and a method for forming a semiconductor device

A semiconductor device includes a plurality of trenches extending into a semiconductor substrate. Each trench comprises a plurality of enlarged width regions distributed along the trench. ... Infineon Technologies Ag

06/15/17 / #20170170264

Semiconductor devices and a circuit for controlling a field effect transistor of a semiconductor device

A semiconductor device includes a plurality of drift regions of a plurality of field effect transistor structures arranged in a semiconductor substrate. The plurality of drift regions has a first conductivity type. ... Infineon Technologies Ag

06/15/17 / #20170170143

Method for connecting a semiconductor chip metal surface of a substrate by means of two contact metallization layers and method for producing an electronic module

A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. ... Infineon Technologies Ag

06/15/17 / #20170170082

Semiconductor package with interlocked connection

A semiconductor package includes a block having opposing first and second main surfaces and sides between the first and second main surfaces, and an encapsulation material at least partly covering the block. One or both of the main surfaces of the block has recessed regions. ... Infineon Technologies Ag

06/15/17 / #20170170028

Method for processing a silicon wafer

Disclosed is a method for processing a semiconductor wafer. The method includes forming an oxygen containing region in the semiconductor wafer, wherein forming the oxygen containing region includes introducing oxygen via a first surface into the semiconductor wafer. ... Infineon Technologies Ag

06/15/17 / #20170168132

Scattering parameter calibration to a semiconductor layer

A compound may include a set of integrated circuits. An integrated circuit, of the set of integrated circuits, may include calibration standards integrated at a silicon layer of the integrated circuit. ... Infineon Technologies Ag

06/15/17 / #20170168122

Magnetic sensor device and method for a magnetic sensor device having a magneto-resistive structure

An embodiment relates to a magnetic sensor device, comprising a magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to spontaneously generate a closed flux magnetization pattern in the magnetic free layer. ... Infineon Technologies Ag

06/15/17 / #20170166437

System and method for a differential comb drive mems

According to an embodiment, a mems device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.. ... Infineon Technologies Ag

06/15/17 / #20170164843

Blood pressure sensor

The disclosure relates to a system for monitoring at least one physiological parameter. The system comprises a measuring apparatus having a sensor unit for detecting the at least one physiological parameter and having a transmission device, and a reading apparatus for receiving data relating to the at least one physiological parameter. ... Infineon Technologies Ag

06/08/17 / #20170164118

System and method for sensor-supported microphone

A system and method for a sensor-supported microphone includes an amplifier having an input configured to be coupled to a transducer, and an output coupled to an analog interface to output a transduced electrical signal from the transducer, a data bus configured to be coupled to an environmental sensor, a calibration parameter storage circuit coupled to the data bus, the calibration parameter storage circuit comprising calibration data relating sensitivity of the transducer with environmental measurements provided by the environmental sensor, and a digital interface coupled to the data bus and configured to output the calibration data and the environmental measurements.. . ... Infineon Technologies Ag

06/08/17 / #20170163366

Robust high speed sensor interface for remote sensors

Systems, methods, and apparatuses are discussed that enable robust, high-speed communication of sensor data. One example system includes a sensor bus, an electronic control unit (ecu), and one or more sensors. ... Infineon Technologies Ag

06/08/17 / #20170163328

System and method for a beamformer

In accordance with an embodiment a beamforming circuit having a radio frequency (rf) front end and a plurality of beamforming delay circuits coupled to the rf front end. Each of the plurality of beamforming delay circuits includes a common delay circuit and a plurality of individual delay circuits coupled to the common delay circuit. ... Infineon Technologies Ag

06/08/17 / #20170163255

Apparatus with integrated protection profile and method

An apparatus includes an electronic switch, a drive unit for driving the electronic switch, a diagnosis unit for determining a current through the electronic switch, a memory for storing a protection profile. The drive unit is configured such that the electronic switch is driven on the basis of the current through the electronic switch determined by the diagnosis unit and on the basis of the protection profile. ... Infineon Technologies Ag

06/08/17 / #20170162682

Semiconductor device having a desaturation channel structure for desaturating a charge carrier concentration in an igbt cell

A semiconductor device includes a first igbt cell having a second-type doped drift zone and a desaturation semiconductor structure for desaturating a charge carrier concentration in the first igbt cell. The desaturation semiconductor structure includes a first-type doped region forming a pn-junction with the drift zone and two trenches arranged in the first-type doped region and arranged beside the first igbt cell in a lateral direction. ... Infineon Technologies Ag

06/08/17 / #20170162679

Semiconductor device with trench edge termination

A semiconductor device is provide that includes: a semiconductor body having a first surface, an inner region, and an edge region; a pn junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region; a recess extending from the first surface in the edge region into the semiconductor body, the recess comprising at least one sidewall; a dielectric filling the recess. In the dielectric, a dielectric number, in the lateral direction, decreases as a distance from the first sidewall increases.. ... Infineon Technologies Ag

06/08/17 / #20170162660

Semiconductor device comprising a field effect transistor and method of manufacturing the semiconductor device

A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region. ... Infineon Technologies Ag

06/08/17 / #20170162476

Connector block with two sorts of through connections, and electronic device comprising a connector block

An electronic device comprising a semiconductor package having a first main surface region and a second main surface region and comprising a semiconductor chip comprising at least one chip pad in the second main surface region and a connector block comprising at least one first electrically conductive through connection and at least one second electrically conductive through connection extending with different cross-sectional areas between the first main surface region and the second main surface region and being arranged side-by-side with the semiconductor chip.. . ... Infineon Technologies Ag

06/08/17 / #20170162460

Semiconductor substrate-on-semiconductor substrate package and method of manufacturing the same

A semiconductor assembly includes a first semiconductor substrate having a first main surface and a second main surface and a second semiconductor substrate having a first main surface and a second main surface. The first main surface of the first semiconductor substrate faces the second main surface of the second semiconductor substrate. ... Infineon Technologies Ag

06/08/17 / #20170162459

Apparatus and method for ion implantation

An apparatus and a method for implanting ions are disclosed. In an embodiment, the apparatus includes a receptacle configured to support the wafer, a source of dopants configured to selectively provide dopants to an implantation region of the wafer and a source of radiation configured to selectively irradiate the implantation region.. ... Infineon Technologies Ag

06/08/17 / #20170162390

Forming a contact layer on a semiconductor body

Disclosed is a method. The method includes forming a metal layer on a first surface of a semiconductor body; irradiating the metal layer with particles to move metal atoms from the metal layer into the semiconductor body and form a metal atom containing region in the semiconductor body; and annealing the semiconductor body. ... Infineon Technologies Ag

06/08/17 / #20170162040

Protected transmission of independent sensor signals

The present disclosure relates to a communication system configured to independently introduce channel protection data into a plurality of different channels prior to transmission. In some embodiments, the system has a plurality of sensors configured to independently generate digital sensor signals, each sensor signal corresponding to a sensed quantity. ... Infineon Technologies Ag

06/08/17 / #20170158493

Method for simultaneous structuring and chip singulation

A hole plate and a mems microphone arrangement are disclosed. In an embodiment a hole plate includes a substrate with a first main surface, a second main surface, and a lateral surface and a perforation structure formed within the substrate, the perforation structure having a plurality of through-holes through the substrate, wherein the through-holes and the lateral surface are a result of a simultaneous dry etching step.. ... Infineon Technologies Ag

06/01/17 / #20170155395

Local phase detection in realigned oscillator

Representative implementations of devices and techniques provide reduced jitter and local phase detection for a controlled oscillator. An edge of a reference signal is injected at a point within the oscillator, and replaces an edge of the generated oscillation signal at the injection point. ... Infineon Technologies Ag

06/01/17 / #20170154974

Semiconductor device and method for producing a semiconductor device

A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a semiconductor device; forming a contact layer that at least partially covers the barrier layer, the barrier layer being configured to prevent a material of the contact layer from diffusing into the semiconductor body; forming a first passivation layer on the contact layer and on exposed surfaces of the barrier layer; in a first etching process, removing the first passivation layer from above the barrier layer so as to uncover sections of the barrier layer; and in a second etching process, removing at least some sections of the barrier layer uncovered by the first etching process. . ... Infineon Technologies Ag

06/01/17 / #20170154857

Method for processing a wafer and wafer structure

A method for processing a wafer in accordance with various embodiments may include: removing wafer material from an inner portion of the wafer to form a structure at an edge region of the wafer to at least partially surround the inner portion of the wafer, and printing material into the inner portion of the wafer using the structure as a printing mask. A method for processing a wafer in accordance with various embodiments may include: providing a carrier and a wafer, the wafer having a first side and a second side opposite the first side, the first side of the wafer being attached to the carrier, the second side having a structure at an edge region of the wafer, the structure at least partially surrounding an inner portion of the wafer; and printing material onto at least a portion of the second side of the wafer.. ... Infineon Technologies Ag

06/01/17 / #20170154853

Method for singulating a multiplicity of chips

A method for singulating a multiplicity of chips is provided. Each chip includes a substrate, an active region arranged at least one of in or on the substrate, at least one electronic component being formed in said active region, and a dielectric above the active region. ... Infineon Technologies Ag

06/01/17 / #20170154835

Electronic module and method of manufacturing the same

An electronic module is provided, which comprises a first carrier; an electronic chip comprising at least one electronic component and arranged on the first carrier; a spacing element comprising a surface arranged on the electronic chip and being in thermal conductive connection with the at least one electronic component; a second carrier arranged on the spacing element; and a mold compound enclosing the electronic chip and the spacing element at least partially; wherein the spacing element comprises a material having a cte value being matched with at least one other cte.. . ... Infineon Technologies Ag

06/01/17 / #20170154808

Substrates with buried isolation layers and methods of formation thereof

A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.. ... Infineon Technologies Ag

06/01/17 / #20170154767

Method for structuring a substrate

According to various embodiments, a method of processing a substrate may include: disposing a viscous material over a substrate including at least one topography feature extending into the substrate to form a protection layer over the substrate; adjusting a viscosity of the viscous material during a contacting period of the viscous material and the substrate to stabilize a spatial distribution of the viscous material as disposed; processing the substrate using the protection layer as mask; and removing the protection layer after processing the substrate.. . ... Infineon Technologies Ag

06/01/17 / #20170153684

Interconnect serialization system and method

A method and system to reduce power consumption are described. The system can include a first device and a second device of a plurality of devices. ... Infineon Technologies Ag

06/01/17 / #20170153318

Radar device with phase noise estimation

A method for estimating phase noise of an rf oscillator signal in a frequency-modulated continuous-wave (fmcw) radar system and related radar devices are provided. The method includes applying the rf oscillator signal to an artificial radar target composed of circuitry, which applies a delay and a gain to the rf oscillator signal, to generate an rf radar signal. ... Infineon Technologies Ag

06/01/17 / #20170153301

Sensor device and sensor arrangement

A sensor arrangement according to an embodiment includes a board with a plurality of conductive lines of a first type, and a plurality of conductive lines of a second type different from the conductive lines of the first type, and a recess. The sensor arrangement further includes a plurality of sensor devices mechanically accommodated on a main surface of the board and arranged around the recess, each sensor device being electrically coupled to the conductive lines of the first type and at least to one of the conductive lines of the second type, wherein each conductive line of the second type electrically couples a sensor device with at least one other item different from the sensor devices of the plurality of sensor devices. ... Infineon Technologies Ag

06/01/17 / #20170153149

Remote temperature sensing

An example method includes outputting, by a device, a first current through a temperature sensor that is that is external to the device; determining, by the device and based on a voltage drop across the temperature sensor while the first current is flowing through the temperature sensor, a current level; outputting, by the device, a second current at the determined current level through the temperature sensor; determining, by an analog-to-digital converter (adc) of the device, a value that corresponds to a voltage drop across the temperature sensor while the second current is flowing through the temperature sensor; outputting, by the device, a third current through a reference resistor that is external to the device; and determining, based on the value and a voltage drop across the reference resistor while the third current is flowing through the reference resistor, a temperature of the temperature sensor.. . ... Infineon Technologies Ag

05/18/17 / #20170142525

System and method for a perpendicular electrode transducer

According to an embodiment, a method of operating a microelectromechanical systems (mems) transducer that has a membrane includes transducing between out-of-plane deflection of the membrane and voltage on a first pair of electrostatic drive electrodes using the first pair of electrostatic drive electrodes. The first pair of electrostatic drive electrodes is formed on the membrane extending in an out-of-plane direction and form a variable capacitance between the first pair of electrostatic drive electrodes.. ... Infineon Technologies Ag

05/18/17 / #20170141802

Voltage standing wave radio measurement and tuning systems and methods

A standing wave ratio detection arrangement is disclosed. The arrangement includes a standing wave ratio detector and a controller. ... Infineon Technologies Ag

05/18/17 / #20170141683

Current threshold detection in syncronous regulation

A synchronous regulator controller, including a synchronous switch that is coupled between a first node and a second node. The controller also includes a first voltage divider that includes a first resistive device that is coupled between the first node and a third node, and a second resistive device that is coupled between the third node and a second node. ... Infineon Technologies Ag

05/18/17 / #20170141196

Semiconductor device having an oxygen diffusion barrier

A semiconductor device includes a semiconductor body having opposite first and second surfaces, a drift or base zone in the semiconductor body and an oxygen diffusion barrier in the semiconductor body. The drift or base zone is located between the first surface and the oxygen diffusion barrier and directly adjoins the oxygen diffusion barrier. ... Infineon Technologies Ag

05/18/17 / #20170141105

Semiconductor device comprising a first transistor and a second transistor

A semiconductor device includes a first transistor and a second transistor in a semiconductor substrate. The first transistor includes a first drain contact electrically connected to a first drain region, the first drain contact including a first drain contact portion and a second drain contact portion. ... Infineon Technologies Ag

05/18/17 / #20170141090

Semiconductor devices for integration with light emitting chips and modules thereof

A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. ... Infineon Technologies Ag

05/18/17 / #20170141089

Power semiconductor arrangement having a plurality of power semiconductor switching elements and reduced inductance asymmetry

A multiplicity of power semiconductor switching elements of the same type parallel have a load current terminal for a load current input and a load current terminal for a load current output. At least one outer load current terminal and at least one inner load current terminal per load current direction include a load current input and a load current output. ... Infineon Technologies Ag

05/18/17 / #20170141049

Wafer edge shape for thin wafer processing

A wafer that includes a front surface, a back surface, and an edge between the front surface and the back surface having a curved edge profile between an edge of the front surface and a side face of the edge of the wafer. The edge profile includes a first convex curve that joins the edge of the front surface, a second convex curve that joins the side face, and an intermediate concave curve that joins the first convex curve and the second convex curve.. ... Infineon Technologies Ag

05/18/17 / #20170140946

Method of manufacturing a cooler for semiconductor modules

A cooling apparatus is manufactured by: receiving a discrete module by a first singular part, the discrete module including a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound, and a first cooling plate at least partly uncovered by the mold compound; attaching a second singular part to a periphery of the first part to form a housing, the housing surrounding a periphery of the discrete module, the second part having a cutout which exposes the first cooling plate and a sealing structure facing a side of the discrete module with the first cooling plate; and filling the sealing structure with a sealing material which forms a water-tight seal around the periphery of the discrete module at the side of the discrete module with the first cooling plate.. . ... Infineon Technologies Ag

05/18/17 / #20170140938

Method of forming a semiconductor device

A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such that the dopant ions are configured to be activated as donors or acceptors. ... Infineon Technologies Ag

05/18/17 / #20170139870

Receiver architecture

In accordance with an embodiment, a receiver includes a receiving unit configured to receive a first received bus signal and a second received bus signal based on a bus input signal. The receiver also includes a first state machine configured to determine that a first output signal is a first symbol in response to the first received bus signal transitioning from a first bus state to a second bus state and staying in the second bus state for less than a first predetermined period of time, and a second symbol in response to the first received bus signal transitioning from the first bus state to the second bus state and staying in the second bus state for at least the first predetermined period of time. ... Infineon Technologies Ag

05/18/17 / #20170138765

Xmr angle sensor arrangement with safety mechanism and method for monitoring the same

An xmr angle sensor arrangement with a safety mechanism comprises an xmr angle sensor having a sensing area for sensing an in-plane magnetic field and for outputting a sensor signal based on the in-plane magnetic field component sensed in the sensing area; a permanent magnet, which is rotatably arranged with respect to the xmr angle sensor to generate a first in-plane magnetic field component in the sensing area of the xmr angle sensor; an excitation current rail path, which is arranged proximate to the sensing area of the xmr angle sensor; and an excitation current provider configured to provide the excitation current rail path with an excitation signal having a excitation signal strength, wherein the excitation signal strength of the excitation signal is chosen to generate a second in-plane magnetic field component in the sensing area of the xmr angle sensor which results, due to a super position of the first and second in-plane magnetic field components, in an expected change of the direction of the resulting in-plane magnetic field component, wherein the xmr angle sensor arrangement is correctly functioning when the sensed change of direction of the resulting in-plane magnetic field component due to the excitation signal corresponds to the expected change of direction of the resulting in-plane magnetic field component.. . ... Infineon Technologies Ag

05/18/17 / #20170138292

System and method for a synchronized driver circuit

According to an embodiment, a controller system that is configured to drive a power switch includes a driver integrated circuit (ic), which includes an interface circuit, a synchronization circuit, and a drive circuit. The interface circuit is configured to receive a control scheme over a serial interface. ... Infineon Technologies Ag

05/11/17 / #20170134194

Mixed analog-digital pulse-width modulator

A pulse width modulation system comprises an analog component and a digital component. The analog component operates to separate a local oscillator signal with different phase shifts and introduce an offset (i.e., a time delay) to analog signals being receive at an input with a tuning operation that fine tunes in the analog signals in the analog (continuous time) domain. ... Infineon Technologies Ag

05/11/17 / #20170134015

Integrated analog delay line of a pulse-width modulator

A pulse width modulation (pwm) system comprises an analog component and a digital component. The analog component introduces an offset (i.e., a time delay) to analog signals being received at an input with a tuning operation that fine tunes in the analog signals in the analog (continuous time) domain. ... Infineon Technologies Ag

05/11/17 / #20170133990

Outphasing power amplifier signal splitter using next stage input impedance and multiple biasing

Embodiments relate to outphasing amplifiers and amplification. One example system includes a signal splitter configured to receive an input signal and output a plurality of signals, wherein the signal splitter shifts each of the plurality of signals by a distinct phase based at least in part on a power of the input signal; a plurality of power amplifiers (pas), each configured to amplify a distinct signal of the plurality of signals to generate a distinct amplified signal; a plurality of input matching networks, each coupled to a distinct pa of the plurality of pas and configured to transform an input impedance of the coupled pa to an outphasing load condition based on the distinct signal the coupled pa is configured to amplify; and a combiner configured to combine the plurality of distinct amplified signals to generate an amplified input signal.. ... Infineon Technologies Ag

05/11/17 / #20170133465

Method of forming a semiconductor device and semiconductor device

In accordance with a method of forming a semiconductor device, an auxiliary structure is formed at a first surface of a silicon semiconductor body. A semiconductor layer is formed on the semiconductor body at the first surface. ... Infineon Technologies Ag

05/11/17 / #20170133289

Semiconductor chip

According to various embodiments, a semiconductor chip may include: a semiconductor body region including a first surface and a second surface opposite the first surface; a capacitive structure for detecting crack propagation into the semiconductor body region; wherein the capacitive structure may include a first electrode region at least partially surrounding the semiconductor body region and at least substantially extending from the first surface to the second surface; wherein the capacitive structure further may include a second electrode region disposed next to the first electrode region and an electrically insulating region extending between the first electrode region and the second electrode region.. . ... Infineon Technologies Ag

05/11/17 / #20170133253

Method and apparatus for use in wafer processing

A method and an apparatus for use in processing a wafer are disclosed. In an embodiment the method includes providing a wafer on a receptacle, shining a light at an edge of the wafer and based on light that passed the edge of the wafer, processing the wafer on the receptacle.. ... Infineon Technologies Ag

05/11/17 / #20170131394

Frequency modulation scheme for fmcw radar

A method for a radar transmitter is described herein. In accordance with one exemplary embodiment, the method includes generating an rf transmit signal composed of at least one sequence of sub-sequent chirp pulses, wherein pseudo-randomly selected chirp pulses are blanked, and radiating the rf transmit signal via at least one antenna as radar signal.. ... Infineon Technologies Ag

05/11/17 / #20170131367

Redundant magnetic angle sensor with improved accuracy

An angle sensor may comprise a first primary sensing element and a second primary sensing element. The first primary sensing element may be positioned adjacent to the second primary sensing element in a plane substantially parallel with respect to a face of a magnet. ... Infineon Technologies Ag

05/04/17 / #20170126261

Analog rf pre-distorter and non-linear splitter

An rf transmitter arrangement using analog pre-distortion is disclosed. The arrangement includes lower bandwidth circuitry, an analog pre-distorter, and a non-linear amplifier chain. ... Infineon Technologies Ag

05/04/17 / #20170126253

Error correction

A circuit arrangement for determining a correction signal on the basis of at least one bit error of a binary word is specified, including a plurality of subcircuits (st), wherein a respective subcircuit is provided for a bit position to be corrected of the binary word, wherein each of the subcircuits provides at least two locator polynomial values, and comprising a selection unit, which determines a correction signal depending on the locator polynomial values and depending on an error signal (err, e). A method for driving such a circuit arrangement is furthermore proposed.. ... Infineon Technologies Ag

05/04/17 / #20170126227

Enhanced semiconductor switch

An first embodiment relates to a device comprising: a first semiconductor switch; an integrated sensor for determining a current that passes the first semiconductor switch; and a terminal to which a signal is provided in case the current fulfills a predetermined condition. Also, a system comprising such device, and a method of operation are suggested.. ... Infineon Technologies Ag

05/04/17 / #20170126180

Optimum current control cmos cascode amplifier

A cmos cascode amplifier comprises a cascode circuit comprising a plurality of branches in parallel, each branch comprising a first transistor and a second switchable transistor connected in series forming a cascode pair, wherein the cascode circuit is configured to amplify an input signal. The cmos cascode amplifier further comprises a bias circuit configured to bias the cascode circuit by providing a bias signal to the first transistor in each of the plurality of the branches in the cascode circuit. ... Infineon Technologies Ag

05/04/17 / #20170126130

Voltage regulator

Various embodiments provide a voltage regulator. The voltage regulator includes a supply voltage input to apply an input supply voltage, a supply voltage output to output an output supply voltage, and a first field effect transistor and a second field effect transistor, which are connected in series between the voltage supply input and the voltage supply output. ... Infineon Technologies Ag

05/04/17 / #20170126119

Feedforward circuit for dc-to-dc converters with digital voltage control loop

Methods, devices, and systems are disclosed for receiving a first clock signal; receiving a digital duty cycle value; using the first clock signal and digital duty cycle value to generate a digital pulse width modulation (dpwm) signal having a plurality of discrete steps to control a switch of a switched-mode power supply; and using a voltage control circuit to modify a duration of each of the plurality of discrete steps of the dpwm signal, wherein the voltage control circuit is configured to receive an analog voltage input.. . ... Infineon Technologies Ag

05/04/17 / #20170126113

System and method for a switch driver

In accordance with an embodiment, switch driver includes a first switch driver configured to be coupled to a control node of a first switch, a second driver configured to be coupled to a control node of a second switch, and a first terminal and a second terminal configured to be couple to a boot capacitor. The first terminal is coupled between a boot input of the first switch driver and the second terminal is configured to be coupled to outputs of the first switch and the second switch. ... Infineon Technologies Ag

05/04/17 / #20170125407

Insulated gate semiconductor device with soft switching behavior

A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. ... Infineon Technologies Ag

05/04/17 / #20170125395

Method for producing a power semiconductor module

In order to produce a power semiconductor module, a circuit carrier is populated with a semiconductor chip and with an electrically conductive contact element. After populating, the semiconductor chip and the contact element are embedded into a dielectric embedding compound, and the contact element is exposed. ... Infineon Technologies Ag

05/04/17 / #20170125362

Multi-die package having different types of semiconductor dies attached to the same thermally conductive flange

A multi-die package is manufactured by attaching a first semiconductor die made of a first semiconductor material to a thermally conductive flange via a first die attach material, and attaching a second semiconductor die to the same thermally conductive flange as the first semiconductor die via a second die attach material. The second semiconductor die is made of a second semiconductor material different than the first semiconductor material. ... Infineon Technologies Ag

05/04/17 / #20170125044

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (esl) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the esl and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the esl; and performing a second etching process to etch the exposed portion of the esl. ... Infineon Technologies Ag

05/04/17 / #20170122772

Circuit, method and sensor for obtaining information on a physical quantity

A circuit for obtaining information on a physical quantity according to an embodiment includes a sensor arrangement sensitive to the physical quantity, at least one further sensor element sensitive to the physical quantity and a supply circuit configured to provide the sensor arrangement with a supply signal comprising a supply voltage controlled by the supply circuit in a closed-loop configuration. The supply circuit is further configured to provide the at least one further sensor element with a further supply signal comprising a further supply current such that a magnitude of the further supply current fulfills a predetermined relationship with a magnitude of a supply current of the supply signal. ... Infineon Technologies Ag

04/27/17 / #20170118012

Devices and methods for multi-channel sampling

Devices for sampling a plurality of input signals are provided, wherein a sampling device is controlled to sample the input signals in a random order with additional delays. Other embodiments relate to voltage monitoring systems and corresponding methods.. ... Infineon Technologies Ag

04/27/17 / #20170117912

Methods and devices for storing parameters

Methods and devices are provided in which a first parameter partial value (p1) is stored in a first memory (12) and a second parameter partial value (p2) is stored in a second memory (13). A parameter value (p) of a parameter can then be obtained by combining the first parameter partial value (p1) with the second parameter partial value (p2).. ... Infineon Technologies Ag

04/27/17 / #20170117908

Systems and methods for oscillators using quadratic temperature compensation

A voltage controlled oscillator arrangement is disclosed. The arrangement includes a voltage controlled oscillator and a quadratic extension component. ... Infineon Technologies Ag

04/27/17 / #20170117907

Frequency synthesizer with injection locked oscillator

Representative implementations of devices and techniques provide reduced jitter for a controlled oscillator. An edge of a reference signal is injected at various points within the oscillator, and is replaced for an edge of the generated oscillation signal at the injection point.. ... Infineon Technologies Ag

04/27/17 / #20170117798

Electric assembly including a semiconductor switching device and a clamping diode

An electric assembly includes a semiconductor switching device with a maximum breakdown voltage rating across two load terminals in an off-state. A clamping diode is electrically connected to the two load terminals and parallel to the switching device. ... Infineon Technologies Ag

04/27/17 / #20170117397

Power semiconductor transistor having fully depleted channel region

A power semiconductor transistor includes a semiconductor body coupled to a load terminal, a drift region, a first trench extending into the semiconductor body and including a control electrode electrically insulated from the semiconductor body by an insulator, a source region arranged laterally adjacent to a sidewall of the first trench and electrically connected to the load terminal, a channel region arranged laterally adjacent to the same trench sidewall as the source region, a second trench extending into the semiconductor body, and a guidance zone electrically connected to the load terminal and extending deeper into the semiconductor body than the first trench. The guidance zone is adjacent the opposite sidewall of the first trench as the source region and adjacent one sidewall of the second trench. ... Infineon Technologies Ag

04/27/17 / #20170117395

Semiconductor device with deep diffusion region

A method of processing a semiconductor device, comprising: providing a semiconductor body having dopants of a first conductivity type; forming at least one trench that extends into the semiconductor body along a vertical direction, the trench being laterally confined by two trench sidewalls and vertically confined by a trench bottom; applying a substance onto at least a section of a trench surface formed by one of the trench sidewalls and/or the trench bottom of the at least one trench, such that applying the substance includes preventing that the substance is applied to the other of the trench sidewalls; and diffusing of the applied substance from the section into the semiconductor body, thereby creating, in the semiconductor body, a semiconductor region having dopants of a second conductivity type and being arranged adjacent to the section.. . ... Infineon Technologies Ag

04/27/17 / #20170117394

Bipolar transistor with superjunction structure

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. ... Infineon Technologies Ag

04/27/17 / #20170117383

Method for forming a semiconductor device

A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate. Additionally, the method includes connecting a carrier substrate to the oxide layer and processing a back side of the semiconductor substrate.. ... Infineon Technologies Ag

04/27/17 / #20170117370

Transistor structure with reduced parasitic "side wall" characteristics

A mos transistor structure for matched operation in weak-inversion or sub-threshold range (e.g. Input-pair of operational amplifier, comparator, and/or current-mirror) is disclosed. ... Infineon Technologies Ag

04/27/17 / #20170117352

Silicon-carbide transistor device with a shielded gate

A sic transistor device includes a silicon-carbide semiconductor substrate having a plurality of first doped regions laterally spaced apart from one another and beneath a main surface of the substrate, a second doped region extending from the main surface to a third doped region that is above the first doped regions, and a plurality of fourth doped regions in the substrate extending from the main surface to the first doped regions. The second doped region has a first conductivity type. ... Infineon Technologies Ag

04/27/17 / #20170117183

Method and apparatus for separating semiconductor devices from a wafer

An embodiment method for separating semiconductor devices from a wafer comprises using a carrier which acts an adjustable adhesive force upon the semiconductor devices and removing the semiconductor devices from the carrier by applying a mechanical or acoustical impulse to the carrier.. . ... Infineon Technologies Ag

04/27/17 / #20170117139

System and method for removing dielectric material

A system is described for removing a dielectric gel, which has been layered atop the electrical components of a failed electrical system, without further damaging the electrical components of the failed electrical system. The system includes a raster component configured to project a laser for vaporizing a dielectric layer of an electric component into a plasma plume located above the dielectric layer. ... Infineon Technologies Ag

04/27/17 / #20170116437

Method for protecting data and data processing device

According to one embodiment, a method for protecting data is provided comprising receiving a plurality of data symbols, determining a sequence of checksum symbols wherein the checksum symbols are determined to be equal to the checksum symbols of the last iteration of an iterative checksum symbol generation process, wherein the determining of the checksum symbols includes at least one of randomly generating the initial values, randomly determining an order of the data symbols in which the contributions of the data symbols to the checksum symbols are incorporated into the checksum symbols and masking each data symbol and using the masked data symbols as data symbols for determining the checksum symbols and which includes storing at least some of the checksum values as checksum for the data symbols.. . ... Infineon Technologies Ag

04/27/17 / #20170115330

Method and apparatus for measuring a disturbed variable

Provided are apparatuses and methods, in which a disturbed measurement variable is converted to a digital signal. The digital signal is then averaged over a number of sampling values which corresponds to a period of the disturbances.. ... Infineon Technologies Ag

04/20/17 / #20170111195

Receiver and method for receiving a signal

A receiver may receive a pulse width encoded signal. The receiver may determine a position of a transition of a pulse of the pulse width encoded signal by oversampling the pulse width encoded signal with respect to a quantization function. ... Infineon Technologies Ag

04/20/17 / #20170111128

Localization system and animal cage comprising the same

A localization system includes an animal transceiver and a floor transceiver circuit. The animal transceiver is configured to be fixed to an animal to transceive a radio frequency signal. ... Infineon Technologies Ag

04/20/17 / #20170110572

Semiconductor devices, power semiconductor devices, and methods for forming a semiconductor device

A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. ... Infineon Technologies Ag

04/20/17 / #20170110505

Magnetoresistive sensor module and method for manufacturing the same

In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.. ... Infineon Technologies Ag

04/20/17 / #20170110423

Semiconductor chip device

According to various embodiments, a method may include: forming a first layer on a surface using a first lift-off process; forming a second layer over the first layer using a second lift-off process; wherein the second lift-off process is configured such that the second layer covers at least one sidewall of the first layer at least partially.. . ... Infineon Technologies Ag

04/20/17 / #20170110418

Digital circuit and method for manufacturing a digital circuit

According to one embodiment, a method for manufacturing a digital circuit is described comprising forming a modified rs master latch with an output for outputting an output signal comprising forming two field effect transistors which are virtually identical wherein the two formed field effect transistors are connected to each other in an rs latch type configuration and the respective threshold voltages of the two field effect transistors are set to be different from each other so that the output signal of the modified rs master latch in response to an rs latch forbidden input transition has a predetermined defined logic state, forming an rs slave latch having a set input and a reset input and connecting the set input or the reset input of the rs-slave latch to the output of the modified rs master latch.. . ... Infineon Technologies Ag

04/20/17 / #20170110371

Method of dicing a wafer and semiconductor chip

A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. ... Infineon Technologies Ag

04/20/17 / #20170110322

Semiconductor device and methods for forming a semiconductor device

A method for forming a semiconductor device includes implanting doping ions into a semiconductor substrate. A deviation between a main direction of a doping ion beam implanting the doping ions and a main crystal direction of the semiconductor substrate is less than ±0.5° during the implanting of the doping ions into the semiconductor substrate. ... Infineon Technologies Ag

04/20/17 / #20170108583

Sonic sensors and packages

Embodiments relate to integrated sonic sensors having a transmitter, a receiver and driver electronics integrated in a single, functional package. In one embodiment, a piezoelectric signal transmitter, a silicon microphone receiver and a controller/amplifier chip are concomitantly integrated in a semiconductor housing. ... Infineon Technologies Ag

04/13/17 / #20170104515

Contactless circuit arrangement

Various embodiments provide a contactless circuit arrangement. The contactless circuit arrangement includes at least one antenna, an antenna tuning circuit having a plurality of electrical components, and an energy supply interface which is connected to the antenna tuning circuit in an electrically conductive manner and is intended to supply electrical energy for electrically connecting or disconnecting at least one electrical component of the plurality of electrical components for adapting the antenna tuning circuit to a target frequency.. ... Infineon Technologies Ag

04/13/17 / #20170104513

Communication arrangement

A communication arrangement may include a communication device, which may include an application processor, a mobile radio circuit, and a near-field communication (nfc) circuit configured according to an nfc technology for transmission of data and energy for operating a circuit external to the communication device. The arrangement may include a flexible carrier mounted detachably on the communication device. ... Infineon Technologies Ag

04/13/17 / #20170104411

Electronic controller with automatic adjustment to unknown input and load voltages

Methods, devices, techniques, and circuits are disclosed for current control of a buck converter. In one example, a device is configured to receive a selected average current value for a current driver. ... Infineon Technologies Ag

04/13/17 / #20170103894

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. ... Infineon Technologies Ag

04/13/17 / #20170103882

Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device

An embodiment of a method of manufacturing semiconductor wafers comprises determining at least one material characteristic for at least two positions of a semiconductor ingot. A notch or a flat is formed in a semiconductor ingot extending along an axial direction. ... Infineon Technologies Ag

04/13/17 / #20170103032

Interface circuit

Devices and methods are provided where a first signal and a second signal are received. The second signal may be a single-ended signal and may be selectively converted to a differential signal based on a type of the first signal.. ... Infineon Technologies Ag

04/13/17 / #20170102438

Digitally-controlled output amplitude of analog sensor signal

A device includes an analog main signal path and a digital control circuit. The digital control circuit determines and provides a digital control signal to the analog main signal path to reduce a gain error of the analog main signal path.. ... Infineon Technologies Ag

04/13/17 / #20170101341

Method of treating an acid effluent containing phosphoric acid

A method of treating an acid effluent including phosphoric acid in accordance with various embodiments may include: providing an acid effluent including phosphoric acid; adding a base and silicon particles from a further effluent to the acid effluent including phosphoric acid so that a mixture is obtained and a solid content is formed; separating from the mixture a solid content including silicon and a salt resulting from a reaction of the base with the acid, so that a clarified effluent can be rejected in the environment and a filter press cake can be obtained and further used as additive for concrete.. . ... Infineon Technologies Ag

04/13/17 / #20170101308

Method of forming a protective coating for a packaged semiconductor device

A packaged includes a flip-chip assembly. The flip-chip assembly includes a first semiconductor substrate having at least one integrated semiconductor device, and a second substrate connected to the first substrate. ... Infineon Technologies Ag

04/06/17 / #20170099549

Sensor with movable part and biasing

Methods and apparatuses are provided wherein a sensor which comprises at least two electrodes and a movable part is alternately biased with at least two different voltages.. . ... Infineon Technologies Ag

04/06/17 / #20170099169

Sensor systems and methods utilizing band pass filter tuning

A communication system having a configurable bandpass filter is disclosed. The system includes a bandpass filter and a bandpass controller. ... Infineon Technologies Ag

04/06/17 / #20170099062

Apparatus and method for testing an analog-to-digital converter

A method for use in testing an analog-to-digital converter. The method includes providing a set of bins, varying a voltage, taking samples of the voltage, providing a selection flag, associating each sample with one bin of the set of bins, and observing a number of samples associated with the bins. ... Infineon Technologies Ag

04/06/17 / #20170098620

Semiconductor device load terminal

A semiconductor device is presented. The semiconductor device comprises a semiconductor body coupled to a first load terminal and to a second load terminal and configured to carry a load current between the first load terminal and the second load terminal. ... Infineon Technologies Ag

04/06/17 / #20170098580

Method for producing a number of chip assemblies and method for producing a semiconductor arrangement

Method for producing chip assemblies that include semiconductor chip arrangements, each semiconductor chip arrangement including a semiconductor chip having a semiconductor body with a top side and an underside, a top main electrode arranged on the top side, a bottom main electrode arranged on the underside, an electrically conductive top compensation lamina arranged on a side of the top main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the top main electrode, an electrically conductive bottom compensation lamina arranged on a side of the bottom main electrode facing away from the semiconductor body and cohesively and electrically conductively connected to the bottom main electrode, and a dielectric embedding compound enclosing the semiconductor chip laterally such that the side of the compensation laminae facing away from the semiconductor body are at least not completely covered by the embedding compound.. . ... Infineon Technologies Ag

04/06/17 / #20170098570

Substrate carrier, a processing arrangement and a method

According to various embodiments, a substrate carrier may include: a substrate-supporting region for supporting a substrate; wherein a first portion of the substrate-supporting region including a pore network of at least partially interconnected pores; wherein a second portion of the substrate-supporting region surrounds the first portion and includes a sealing member for providing a contact sealing; at least one evacuation port for creating a vacuum in the pore network, such that a substrate received over the substrate-supporting region is adhered by suction; and at least one valve configured to control a connection between the pore network and the at least one evacuation port, such that a vacuum can be maintained in the pore network; wherein the pore network includes a first pore characteristic in a first region and a second pore characteristic in a second region different from the first pore characteristic.. . ... Infineon Technologies Ag

04/06/17 / #20170098569

Wafer carrier, method for manufacturing the same and method for carrying a wafer

A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. ... Infineon Technologies Ag

04/06/17 / #20170098472

Memory unit and method of operating a memory unit sector

Disclosed is a memory unit that includes a sector of memory cells. The sector includes a first memory cell configured to selectively take on a state representation of a first plurality of state representations and a second memory cell configured to selectively take on at least one of a second plurality of state representations. ... Infineon Technologies Ag

04/06/17 / #20170097913

Sensor systems and methods utilizing adaptively selected carrier frequencies

A sensor system utilizing adaptively selected carrier frequencies is disclosed. The system includes a system bus, a bus master, and a sensor. ... Infineon Technologies Ag

04/06/17 / #20170097223

Device, a tire pressure measurement device, a tire, a method and a computer program to obtain information indicating a tread depth

Embodiments provide a device, a tire pressure measurement system, a tire, a method and a computer program to obtain information indicating a tread depth of the tire. The device to obtain information indicating a tread depth of a tire of a vehicle comprises a transducer to provide acoustical signals based on electrical signals and vice versa. ... Infineon Technologies Ag

04/06/17 / #20170096066

Inverter with thermal conductivity interface material and hybrid vehicle to which the same is applied

A hybrid vehicle including a hybrid power control unit (hpcu) is provided. The hpcu includes a power module having chips disposed therein, each of which generates heat during operation, a coolers that cools the heat from the power module. ... Infineon Technologies Ag

03/30/17 / #20170092637

Semiconductor esd protection device and method

According to an embodiment, an electrostatic discharge (esd) protection circuit includes a first transistor having a first source/drain coupled to a first input/output terminal, a second source/drain coupled to a first reference voltage terminal, and a gate coupled to a second reference voltage terminal. The esd protection circuit further includes a direct current (dc) blocking circuit having a first input/output node coupled to the first input/output terminal, a second input/output node configured to be coupled to a useful circuit, and a third input/output node coupled a gate of the first transistor.. ... Infineon Technologies Ag

03/30/17 / #20170092569

Direct selective adhesion promotor plating

A lead frame strip having a plurality of unit lead frames is provided. Each of the unit lead frames includes a die paddle, a plurality of leads extending away from the die paddle, and a peripheral ring delineating interior portions of the leads from exterior portions of the leads. ... Infineon Technologies Ag

03/30/17 / #20170092563

Electronic module and method of manufacturing the same

According to an exemplary aspect an electronic module is provided, wherein the electronic module comprises an electronic chip comprising at least one electronic component, a spacing element comprising a main surface arranged on the electronic chip and being in thermally conductive connection with the at least one electronic component, and a mold compound at least partially enclosing the electronic chip and the spacing element, wherein the spacing element comprises a lateral surface which is in contact to the mould compound and comprises surface structures.. . ... Infineon Technologies Ag

03/30/17 / #20170092552

Method for use in manufacturing a semiconductor device die

In one embodiment, a wafer includes a number of die areas each including a semiconductor device and dedicated to become a separate die. The die areas are disposed on a first face of the wafer and wherein adjacent die areas are distanced from one another. ... Infineon Technologies Ag

03/30/17 / #20170092024

Apparatus and a method for providing an error signal for a control unit

An apparatus for providing an error signal for a control unit, the error signal indicating a malfunction of a sensor unit. The apparatus includes an input module configured to receive a sensor signal from the sensor unit, the sensor signal being a periodic signal between an upper level and a lower level of a physical quantity. ... Infineon Technologies Ag

03/30/17 / #20170091610

Semiconductor device having one or more of a shock sensor and an acceleration sensor

A semiconductor device includes a semiconductor substrate having an upper first main face and first and second recess areas formed in the upper first main face, a battery arranged at the first recess area and one or more of a shock sensor and an acceleration sensor arranged at the second recess area. The shock sensor or the acceleration sensor includes a movable mass, a cantilever connected to the moveable mass, a piezoelectric layer applied to the cantilever, and a wiring connected to the piezoelectric layer. ... Infineon Technologies Ag

03/30/17 / #20170089956

Magnetic field current sensors, sensor systems and methods

Embodiments relate to coreless magnetic field current sensors, systems and methods, such as magnetoresistive sensors, systems and methods, to sense current flow in a conductor via a related magnetic field. In an embodiment, a current sensor system for sensing a current in a conductor from a magnetic field induced thereby, comprising a plurality n of magnetoresistive (mr) sensors arranged on a circle concentric to a center of the conductor and spaced apart from one another by 360 degrees/n, wherein each mr sensor has a sensitivity plane and is responsive to a projection of the magnetic field into the sensitivity plane, the sensitivity planes of the plurality of mr sensors being parallel, and wherein the plurality of mr sensors are arranged relative to the conductor such that the magnetic field has a non-vanishing component parallel to the sensitivity plane; at least one magnetic element arranged to provide a bias magnetic field on the plurality of mr sensors; and circuitry coupled to the plurality of mr sensors to determine the current in the conductor by combining signals from each of the plurality of mr sensors.. ... Infineon Technologies Ag

03/30/17 / #20170089726

Using cartesian coordinates for position detection with a magnetic sensor

A magnetic sensor, may sense a first magnetic field component corresponding to a first axis of a magnetic field produced by a magnet. The magnetic sensor may sense a second magnetic field component corresponding to a second axis of the magnetic field. ... Infineon Technologies Ag

03/23/17 / #20170085257

System and method for a radio frequency switch

A circuit includes multiple switching networks coupled between corresponding multiple rf ports and a common rf port. Each of the multiple switching networks includes a first switch between its corresponding rf port and the common rf port. ... Infineon Technologies Ag

03/23/17 / #20170084692

Insulated gate bipolar transistor device having a fin structure

An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure, a first fin structure starting from the drift region of the semiconductor substrate and extending orthogonal to a main surface of the semiconductor substrate, and a first gate structure of the insulated gate bipolar transistor structure extending alma at least a part of the first fin structure.. . ... Infineon Technologies Ag

03/23/17 / #20170084607

Shallow trench isolation area having buried capacitor

A method of forming a semiconductor device includes providing a semiconductor substrate including a source/drain region, an active transistor region, and a substrate contact region coupled to a body region. A shallow trench isolation (sti) area is formed in a major surface of the semiconductor substrate in between the active transistor region and the substrate contact region. ... Infineon Technologies Ag

03/23/17 / #20170084567

Preform structure for soldering a semiconductor chip arrangement, a method for forming a preform structure for a semiconductor chip arrangement, and a method for soldering a semiconductor chip arrangement

A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.. . ... Infineon Technologies Ag

03/23/17 / #20170084468

Method for processing a wafer and method for dicing a wafer

In various embodiments, a method for processing a wafer may include: providing a wafer having at least one die region and at least one metallization disposed over the at least one die region; covering the at least one metallization with a protecting layer; plasma etching the wafer to form at least one die.. . ... Infineon Technologies Ag

03/23/17 / #20170083723

Zero detection circuit and masked boolean or circuit

A zero detection circuit includes a chain of masked or circuits. Each masked or circuit includes data inputs. ... Infineon Technologies Ag

03/23/17 / #20170082502

Temperature sensor

Temperature sensor devices and corresponding methods are provided. A temperature sensor may include a first layer being essentially non-conductive in a temperature range and a second layer having a varying resistance in the temperature range.. ... Infineon Technologies Ag

03/23/17 / #20170082419

Initial angle detection in stand still

An apparatus and method for determining initial rotor position in a stationary state of an electric machine. The apparatus and method for determining initial rotor position in a stationary state of an electric machine include: a power supply module being used for supplying power at least to a motor; a switch circuit being used for switching motor power supply modes, wherein each power supply mode corresponds to a different electrical angle; a feedback circuit detecting a motor winding current and generating a corresponding feedback signal to feed back to a controller; and the controller determining a rotor angle on the basis of currents passing through the motor in different power supply modes, wherein the controller performs the following operations: (a) weighting and then comparing fed-back current values of currents passing through the motor in different power supply modes; (b) based on a maximum current value and current values for two power supply modes before and after the power supply mode corresponding to the maximum current value, calculating a position angle pa corresponding to the position of the maximum current value by using a similar triangle approximation method.. ... Infineon Technologies Ag

03/23/17 / #20170081175

Electronic sensor device including a flip-chip mounted semiconductor chip and a substrate with an opening

The electronic device comprises a semiconductor chip comprising a first main face, a second main face opposite to the first main face, side faces connecting the first and second main faces, and a sensor element or actuator element disposed at the first main face, and a substrate, wherein the semiconductor chip is disposed above the substrate, the first main face of the semiconductor chip facing the substrate, wherein the substrate comprises a substrate opening, the substrate opening permitting passage of signals to the sensor element or from the actuator element.. . ... Infineon Technologies Ag

03/16/17 / #20170079132

Electronics assembly with interference-suppression capacitors

An electronics assembly includes a plurality of first semiconductor chips each having a first load terminal and a second load terminal, a conductor structure having a first conductor strip, a second conductor strip and a third conductor strip, a plurality of first interference-suppression capacitors arranged on the conductor structure and each having a first capacitor terminal and a second capacitor terminal, and a heat sink. The first load terminal of each first semiconductor chip is electrically connected to the first conductor strip, the second load terminal of each first semiconductor chip is electrically connected to the third conductor strip, the first capacitor terminal of each first interference-suppression capacitor is electrically connected to the first conductor strip, the second capacitor terminal of each first interference-suppression capacitor is electrically connected to the second conductor strip, and the heat sink is electrically connected to the second conductor strip.. ... Infineon Technologies Ag

03/16/17 / #20170077952

Sensor interface that provides a long package crc to improve functional safety

A data transmission system comprising an automotive sensor network system (asns) connected to a plurality of source locations via a common bus, wherein the asns is configured to ascertain the source from which the data-frames and first package checksum are received and based on the ascertainment of the source, appropriate decoding methods are used to calculate the asns location data-frame checksums and the asns location package checksums. A higher order redundancy check is done over a series of data-frames to detect errors in the reception caused by temporary high interference that may exist in the transmission path.. ... Infineon Technologies Ag

03/16/17 / #20170077862

Calculation of mosfet switch temperature in motor control

Systems and techniques are described for monitoring the operating temperature of one or more circuit elements, such as a metal oxide field effect transistor (mosfet) switch, where the circuit element is used to control at least one phase of an electric motor. The systems and techniques may calculate temperature by determining at least two electrical signals from the circuit element taken at least two different times. ... Infineon Technologies Ag

03/16/17 / #20170077251

Semiconductor device with stripe-shaped trench gate structures and gate connector structure

A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate connector structure at a distance to the first surface is electrically connected to a gate electrode in the trench gate structure. ... Infineon Technologies Ag

03/16/17 / #20170076970

Methods for processing a semiconductor workpiece

Methods for processing a semiconductor workpiece can include providing a semiconductor workpiece that includes one or more kerf regions; forming one or more trenches in the workpiece by removing material from the one or more kerf regions from a first side of the workpiece; mounting the workpiece with the first side to a carrier; thinning the workpiece from a second side of the workpiece; and forming a metallization layer over the second side of the workpiece.. . ... Infineon Technologies Ag

03/16/17 / #20170076962

Plasma system, chuck and method of making a semiconductor device

A chuck, a system including a chuck and a method for making a semiconductor device are disclosed. In one embodiment the chuck includes a first conductive region configured to be capacitively coupled to a first rf power generator, a second conductive region configured to be capacitively coupled to a second rf power generator and an insulation region that electrically insulates the first conductive region from the second conductive region.. ... Infineon Technologies Ag

03/16/17 / #20170076961

Arrangement and method for manufacturing the same

An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. ... Infineon Technologies Ag

03/16/17 / #20170073213

Comb mems device and method of making a comb mems device

A mems device and a method to manufacture a mems device are disclosed. An embodiment includes forming trenches in a first main surface of a substrate, forming conductive fingers by forming a conductive material in the trenches and forming an opening from a second main surface of the substrate thereby exposing the conductive fingers, the second main surface opposite the first main surface.. ... Infineon Technologies Ag

03/09/17 / #20170069561

Power semiconductor module having a two-part housing

A power semiconductor module includes a substrate having a first side for being arranged to face a heat sink and for being thermally conductively connected to the heat sink, a power semiconductor component arranged on an opposing second side of the substrate, and an electrically insulating housing defining a cavity in which the substrate and the power semiconductor component are accommodated. The housing includes a frame which surrounds the substrate in a frame-like manner, and a hood for being fastened to the heat sink by way of fastening means. ... Infineon Technologies Ag

03/09/17 / #20170069554

Monitor structures and methods of formation thereof

A method of forming an electronic device includes forming a first opening and a second opening in a workpiece. The first opening is deeper than the second opening. ... Infineon Technologies Ag

03/09/17 / #20170067941

Balancing an eddy current effect and a skin effect on a magnetic sensor using die paddle notches

A magnetic current sensor may include a first sensing element, a second sensing element, and a die paddle. The die paddle may include a first edge and a second edge substantially parallel to a direction of the current. ... Infineon Technologies Ag

03/09/17 / #20170067859

Apparatus and method for in-situ calibration of a photoacoustic sensor

An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a light emitter to emit light along a transmission path to a gas and an acoustic sensor element configured to detect an acoustic signal emitted from the gas based on the received light. ... Infineon Technologies Ag

03/09/17 / #20170067158

Substrate carrier system for moving substrates in a vertical oven and method for processing substrates

A substrate carrier system for carrying substrates to a vertical oven and a vertical oven are disclosed. In an embodiment, the system includes a substrate carrier configured to carry a plurality of substrates and a substrate carrier support structure configured to be inserted along an insertion direction into the vertical oven, and to receive the substrate carrier in a direction substantially orthogonal to the insertion direction into a holding position in the substrate carrier support structure.. ... Infineon Technologies Ag

03/02/17 / #20170063853

Data cipher and decipher based on device and data authentication

A device is described that determines a session key for generating a message authentication code (mac) tag associated with a communication session between the device and a second device. The device determines, based at least in part on the session key, a crypto key for encoding or decoding a message associated with the second device. ... Infineon Technologies Ag

03/02/17 / #20170063365

Method and drive circuit for driving a transistor

A transistor is driven by a drive circuit that includes a logic unit and drive signal generator. The drive signal generator outputs a temporally variable drive voltage for driving the transistor, based on setpoint state information. ... Infineon Technologies Ag

03/02/17 / #20170063308

Devices and methods that facilitate power amplifier off state performance

A peaking amplifier is disclosed. The peaking amplifier includes a driver stage, a final stage, and an interstage matching network. ... Infineon Technologies Ag

03/02/17 / #20170063077

Supplying load having inrush-current behaviour

Devices and methods are provided relating to supplying a load having an inrush-current behavior, e.g. Charging of a capacitance e.g. ... Infineon Technologies Ag

03/02/17 / #20170062704

Hall effect device

A hall effect device includes an active hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active hall region or extends in the active hall region; and wherein the sense contact elements are arranged in the active hall region and neighboring to the switchable supply contact elements.. . ... Infineon Technologies Ag

03/02/17 / #20170062568

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

A semiconductor device is provided that includes a silicon semiconductor body having a drift or base zone of net n-type doping. An n-type doping is partially compensated by 10% to 80% with p-type dopants. ... Infineon Technologies Ag

03/02/17 / #20170062358

Chip carrier, a device and a method

According to various embodiments, a chip carrier may include: a chip supporting region configured to support a chip; a chip contacting region including at least one contact pad for electrically contacting the chip; wherein the chip carrier is thinned in the chip contacting region such that a first thickness of the chip carrier at the at least one contact pad is smaller than a second thickness of the chip carrier in the chip supporting region.. . ... Infineon Technologies Ag

03/02/17 / #20170062312

Mold packaged semiconductor chip mounted on a leadframe and method of manufacturing the same

A semiconductor device package includes a leadframe and a semiconductor chip mounted to the leadframe. The semiconductor device package further includes a molded encapsulant configured to cast-in-place the leadframe. ... Infineon Technologies Ag

03/02/17 / #20170062289

At least partially balancing out thickness variations of a substrate

A method of thinning a substrate, the method comprising subjecting the substrate to a thinning process, determining information indicative of a surface topography of the thinned substrate, and selectively removing material from at least one surface portion of the thinned substrate based on the determined information to thereby at least partially balance out thickness variations.. . ... Infineon Technologies Ag

03/02/17 / #20170062241

Method for soldering an insulating substrate onto a carrier

A method for soldering an insulating substrate onto a substrate mounting portion of a carrier by a predefined solder is provided. The insulating substrate includes a dielectric insulation carrier, a top side, and a bottom side opposite to the top side. ... Infineon Technologies Ag

03/02/17 / #20170061313

System and method for estimating a performance metric

A performance estimation method includes determining, for a device response that is dependent on first factors and second factors, a plurality of response distributions including at least one of: a measured response distribution of a production set corresponding to a setting of the first factors, the production set including a plurality of manufactured units; a response distribution simulated in accordance with a simulation model and with a combined factor setting of the first factors and the second factors; and a response distribution estimated in accordance with the combined factor setting and in accordance with a response prediction model relating the device response to the first factors and to the second factors. The method also includes estimating, in accordance with the plurality of response distributions, a performance metric prediction model relating a performance metric to the first factors.. ... Infineon Technologies Ag

03/02/17 / #20170059997

Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

A beam modifier device is provided that includes scattering portions in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction. A total permeability for the particles changes along a lateral direction parallel to the exposure surface.. ... Infineon Technologies Ag

03/02/17 / #20170059526

Transmission of information associated with a possible sensor fault of a magnetic sensor

A magnetic sensor may sense a magnetic field during a rotation of a wheel. The sensed magnetic field may represent a profile of the wheel during the rotation. ... Infineon Technologies Ag

03/02/17 / #20170059363

Magnetoresistive angle sensor with linear sensor elements

A magnetic sensor may comprise a first linear output sensing element configured to sense a first component of an external magnetic field associated with a first axis. The first linear output sensing element may provide a first output voltage corresponding to the first component of the external magnetic field. ... Infineon Technologies Ag

03/02/17 / #20170058815

Detecting fuel injector timing with current sensing

A fuel injection system for an internal combustion engine includes a fuel injector and an engine control system. The engine control system is configured to send electrical fuel injection signals to the fuel injector to open the fuel injector, monitor a current amplitude of electrical fuel injection signals, detect the mechanical openings of the fuel injector based on the monitored current amplitudes of electrical fuel injection signals according to inflection points between a decreasing slope and an increasing slope in the monitored current amplitudes of electrical fuel injection signals, calculate time delays between the sent electrical fuel injection signals and the mechanical openings of the fuel injector, and set durations of electrical fuel injection signals based on the calculated time delays.. ... Infineon Technologies Ag

03/02/17 / #20170057815

Method of forming a protective coating for a packaged semiconductor device

A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first semiconductor substrate. ... Infineon Technologies Ag

03/02/17 / #20170055850

Sensor device

A sensor device includes an implantable sensor unit, a transponder unit, and a wired connection flexibly and electrically connecting the implantable sensor unit and the transponder unit. The implantable sensor unit is adapted to be implanted into a body. ... Infineon Technologies Ag

02/23/17 / #20170054437

Method for driving a transistor device and electronic circuit

Disclosed is a method and a drive circuit. The method includes measuring a frequency of an input signal received by a drive circuit and driving a transistor device by the drive circuit based on the input signal such that a switching speed of the transistor is dependent on the measured frequency. ... Infineon Technologies Ag

02/23/17 / #20170054395

Optimized field oriented control strategies for permanent magnet synchronous motors

A motor control system and associated method includes a transform component configured to receive current values associated with a motor being driven by the motor control system, and output rotating coordinate system values representing a flux generating component and a torque generating component of a current space vector. The motor control system and method further includes a control component configured to receive the flux generating component and the torque generating component of the current space vector, and generate motor control signals for driving the motor by performing a cartesian to polar transform to obtain values associated with a rotating coordinate system followed by an angle addition to convert the rotating coordinate system values to values of a stationary coordinate system.. ... Infineon Technologies Ag

02/23/17 / #20170054391

System and method for motor control using position sensors

An embodiment method for motor control includes monitoring a plurality of position sensors coupled to a revolving motor. The monitoring includes measuring transition times of respective output patterns produced by the position sensors, the respective output patterns each including at least one transition time that repeats in accordance with each revolution of the motor. ... Infineon Technologies Ag

02/23/17 / #20170054007

Latch-up free power transistor

There are disclosed herein various implementations of a latch-up free power transistor. Such a device includes an insulated gate situated adjacent to a conduction channel in the power transistor, an emitter electrode in direct physical contact with the conduction channel, and a collector electrode in electrical contact with the conduction channel. ... Infineon Technologies Ag

02/23/17 / #20170053879

Method, a semiconductor device and a layer arrangement

A semiconductor device may include: a substrate; a metallization layer disposed at least one of in or over the substrate; a protection layer disposed at least partially over the metallization layer, wherein the metallization layer includes at least one of: copper, aluminum, gold, silver; and wherein the protection layer includes a nitride material including at least one of: copper, aluminum, gold, silver.. . ... Infineon Technologies Ag

02/23/17 / #20170052083

Dynamic pressure sensor

According to various embodiments, a dynamic pressure sensor includes a substrate, a reference volume formed in the substrate, a deflectable membrane sealing the reference volume, a deflection sensing element coupled to the membrane and configured to measure a deflection of the membrane, and a ventilation hole configured to equalize an absolute pressure inside the reference volume with an absolute ambient pressure outside the reference volume.. . ... Infineon Technologies Ag

02/23/17 / #20170050588

Current loop sensor interface using a terminated symmetrical physical layer

A sensor system or a sensor bus comprises a plurality of sensors coupled together by a bus to a controller for sensing physical parameters and responding to changes of the physical parameters. The bus comprises a two wire bus, with a first wire and a second wire, configured to communicate supply signals to the plurality of sensors and data communication signals generated by current modulate signals from the plurality of sensors or the controller. ... Infineon Technologies Ag

02/23/17 / #20170050422

Method for processing a carrier and method for transferring a graphene layer

According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.. . ... Infineon Technologies Ag

02/16/17 / #20170047423

Method for manufacturing vertically integrated semiconductor device

A vertically integrated semiconductor device in accordance with various embodiments may include: a first semiconducting layer; a second semiconducting layer disposed over the first semiconducting layer; a third semiconducting layer disposed over the second semiconducting layer; and an electrical bypass coupled between the first semiconducting layer and the second semiconducting layer.. . ... Infineon Technologies Ag

02/16/17 / #20170046280

Data processing device and method for protecting a data processing device against attacks

A data processing device may have an instruction memory which is configured to store a computer program, a processing unit which is configured to execute the computer program, a program counter which is configured to specify a command of the computer program in the instruction memory as the next to be executed, a call stack, an encryption device which is configured to encrypt, when a subroutine is called in the computer program, a return address which specifies a command of the computer program in the instruction memory with which operations are to continue after the execution of the subroutine, and to store the encrypted return address in the call stack and a decryption device which is configured to read, after the execution of the subroutine, the encrypted return address from the call stack, to decrypt it and to set the program counter on the basis of the decrypted return address.. . ... Infineon Technologies Ag

02/16/17 / #20170046223

Memory device and method for correcting a stored bit sequence

A memory device includes a memory with first memory cells and second memory cells, which are different from the first memory cells. In the first memory cells there is stored a first bit sequence and in the second memory cells there is stored a second bit sequence. ... Infineon Technologies Ag

02/16/17 / #20170046222

Error correction using wom codes

A method is proposed for storing bits in memory cells of a memory, wherein in two successive write operations first and second wits are written to identical memory cells at an identical address, without the memory cells being erased after the first write operation, wherein first check bits are stored in further first memory cells and second check bits are stored in further second memory cells. A corresponding device is furthermore specified.. ... Infineon Technologies Ag

02/16/17 / #20170045606

Method, device and system for processing radar signals

An embodiment relates to a method for processing radar signals. The radar signals may include digitized data received by at least two radar antennas. ... Infineon Technologies Ag

02/16/17 / #20170045546

Io matching current modulated output for sensors

A sensor system enables a direct communication from a current modulated two-wire sensor or a speed sensor module to a ttl or cmos processor. A magnetic speed sensor provides a current modulated signal directly to an input/output (i/o) pin of the ttl or cmos processor, which is able to read ttl or cmos levels of i/o signals thereat. ... Infineon Technologies Ag

02/16/17 / #20170045377

Angle sensing in an off-axis configuration

A system may include a magnet fixed to a rotatable object. The rotatable object may be positioned to concentrically rotate about an axis. ... Infineon Technologies Ag

02/09/17 / #20170041716

System and method for a multi-electrode mems device

According to an embodiment, a mems transducer includes a stator, a rotor spaced apart from the stator, and a multi-electrode structure including electrodes with different polarities. The multi-electrode structure is formed on one of the rotor and the stator and is configured to generate a repulsive electrostatic force between the stator and the rotor. ... Infineon Technologies Ag

02/09/17 / #20170041708

System and method for a pumping speaker

According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. ... Infineon Technologies Ag

02/09/17 / #20170041000

Circuitry and method for operating an electronic switch

A circuit includes an electronic switch with an isolated gate, a measuring device for determining a charge at the isolated gate, and an energy supply for providing charge to the isolated gate based on the charge determined by the measuring device.. . ... Infineon Technologies Ag

02/09/17 / #20170040988

Method and apparatus for providing an adjustable high resolution dead time

The disclosure generally relates to a method and an apparatus for providing an adjustable high resolution dead time, and more specifically, to a method and an apparatus for inserting an adjustable high resolution dead time in a pwm signal. A method for inserting an adjustable high resolution dead time in a pwm signal includes receiving a clock signal at a delaying circuitry and generating, by the delaying circuitry, a plurality of phases, receiving the generated plurality of phases at a first multiplexer, and selecting and forwarding, by the first multiplexer, a first phase of the plurality of phases based on a first high resolution dead time value. ... Infineon Technologies Ag

02/09/17 / #20170040431

Semiconductor devices, a semiconductor diode and a method for forming a semiconductor device

A semiconductor device includes at least one highly doped region of an electrical device arrangement formed in a semiconductor substrate and a contact structure including an ntc (negative temperature coefficient of resistance) portion arranged adjacent to the at least one highly doped region at a front side surface of the semiconductor substrate. The ntc portion includes a negative temperature coefficient of resistance material.. ... Infineon Technologies Ag

02/09/17 / #20170040425

Wide bandgap semiconductor device

A semiconductor device includes a source zone electrically connected to a first load terminal, a contiguous zone isolating the source zone from a drift zone, and a trench extending into a semiconductor body along a vertical direction and including a first electrode electrically connected to a control terminal and an insulator in contact with the contiguous zone and which isolates the first electrode from the semiconductor body. The insulator has, at a trench bottom region, a first thickness along the vertical direction, and, at a trench top region, a second thickness along a lateral direction, the first thickness being greater than the second thickness by a factor of at least 1.5. ... Infineon Technologies Ag

02/09/17 / #20170040137

Fuse arrangement

A fuse arrangement, including: at least a first terminal, a second terminal, and a fuse, wherein the first terminal and the second terminal may be electrically connected via the fuse, and wherein the fuse may be configured to be under fuse internal mechanical stress to deform the fuse along its width direction in case it is broken.. . ... Infineon Technologies Ag

02/02/17 / #20170034913

Pcb based semiconductor package having integrated electrical functionality

A semiconductor package includes a metal baseplate, a semiconductor die having a reference terminal attached to the baseplate and an rf terminal facing away from the baseplate, and a multilayer circuit board having a first side attached to the baseplate and a second side facing away from the baseplate. The multilayer circuit board includes a plurality of interleaved signal and ground layers. ... Infineon Technologies Ag

02/02/17 / #20170034634

Sound transducer structure and method for manufacturing a sound transducer structure

A sound transducer structure includes a membrane and a counter electrode. The membrane includes a first main surface in a sound transducing region made of a membrane material, and an edge region. ... Infineon Technologies Ag

02/02/17 / #20170034464

Imaging apparatus and imaging method for capturing imaging data via a pixel array

The present disclosure relates to an imaging apparatus. The imaging apparatus comprises a pixel array. ... Infineon Technologies Ag

02/02/17 / #20170033794

Semiconductor devices

A semiconductor device includes a first transistor cell of a plurality of transistor cells of a vertical field effect transistor arrangement, and a second transistor cell of the plurality of transistor cells. The first transistor cell and the second transistor cell are electrically connected in parallel. ... Infineon Technologies Ag

02/02/17 / #20170033212

Semiconductor device and transistor cell having a diode region

A transistor cell includes a drift region, a source region, and a body region arranged between the source region and the drift region in a semiconductor body. A drain region is below the drift region. ... Infineon Technologies Ag

02/02/17 / #20170033191

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

A semiconductor device is provided that includes a transistor in a semiconductor body having a main surface. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. ... Infineon Technologies Ag

02/02/17 / #20170033189

Method of manufacturing a semiconductor structure and semiconductor device

A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask comprises an opening surrounding a first portion of the first mask, thereby separating the first portion and a second portion of the first mask. ... Infineon Technologies Ag

02/02/17 / #20170033095

Capacitors in integrated circuits and methods of fabrication thereof

In one embodiment, a capacitor includes a first row including a first capacitor element and a second capacitor element coupled in parallel, and a second row including a third capacitor element and a fourth capacitor element coupled in parallel. The first row is coupled in series with the second row. ... Infineon Technologies Ag

02/02/17 / #20170033067

Semiconductor device and a method for manufacturing a semiconductor device

According to various embodiments, a semiconductor device may include: at least one first contact pad on a front side of the semiconductor device; at least one second contact pad on the front side of the semiconductor device; a layer stack disposed at least partially over the at least one first contact pad, wherein the at least one second contact pad is at least partially free of the layer stack; wherein the layer stack includes at least an adhesion layer and a metallization layer; and wherein the metallization layer includes a metal alloy and wherein the adhesion layer is disposed between the metallization layer and the at least one first contact pad for adhering the metal alloy of the metallization layer to the at least one first contact pad.. . ... Infineon Technologies Ag

02/02/17 / #20170033066

Semiconductor devices and methods of forming thereof

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. ... Infineon Technologies Ag

02/02/17 / #20170033046

Electrical device and fabrication method

An electrical device with a fin structure, a first section of the fin structure having a first width and a first height, a second section of the fin structure having a second width and a second height, wherein the first width is smaller than the second width and the first height is lower than the second height.. . ... Infineon Technologies Ag

02/02/17 / #20170033011

Method for forming a semiconductor device and a semiconductor device

A method of forming a semiconductor device and a semiconductor device are provided. The method includes providing a wafer stack including a carrier wafer comprising graphite and a device wafer comprising a wide band-gap semiconductor material and having a first side and a second side opposite the first side, the second side being attached to the carrier wafer, defining device regions of the wafer stack, partly removing the carrier wafer so that openings are formed in the carrier wafer arranged within respective device regions and that the device wafer is supported by a residual of the carrier wafer; and further processing the device wafer while the device wafer remains supported by the residual of the carrier wafer.. ... Infineon Technologies Ag

02/02/17 / #20170033010

Method for forming a wafer structure, a method for forming a semiconductor device and a wafer structure

A method of producing a semiconductor device and a wafer structure are provided. The method includes attaching a donor wafer comprising silicon carbide to a carrier wafer comprising graphite, splitting the donor wafer along an internal delamination layer so that a split layer comprising silicon carbide and attached to the carrier wafer is formed, removing the carrier wafer above an inner portion of the split layer while leaving a residual portion of the carrier wafer attached to the split layer to form a partially supported wafer, and further processing the partially supported wafer.. ... Infineon Technologies Ag

02/02/17 / #20170032992

Substrate carrier, a method and a processing device

A substrate carrier may include: a carrier plate including a plurality of substrate receiving regions; each substrate receiving region may include at least one first recess portion having a first depth and at least one second recess portion having a second depth, the second depth being greater than the first depth; and a carrier plate mounting structure configured to support the carrier plate.. . ... Infineon Technologies Ag

02/02/17 / #20170032986

Plasma systems and methods of processing using thereof

A plasma system includes a plasma chamber comprising a chamber wall with a first focal line and a second focal line disposed within the chamber wall. A first antenna is disposed within the plasma chamber at the first focal line. ... Infineon Technologies Ag

02/02/17 / #20170032966

Semiconductor chip arrangement and method thereof

A method for processing a semiconductor carrier is provided, the method including: providing a semiconductor carrier including a doped substrate region and a device region disposed over a first side of the doped substrate region, the device region including at least part of one or more electrical devices; and implanting ions into the doped substrate region to form a gettering region in the doped substrate region of the semiconductor carrier.. . ... Infineon Technologies Ag

02/02/17 / #20170032964

Method for protecting a surface of a substrate and semiconductor device

A method for protecting a surface of a substrate includes processing the substrate, forming a pyrolytic carbon layer on at least one surface of the substrate, and subjecting the substrate to thermal treatment, specifically above a temperature of about 1300° c., typically above about 1400° c.. . ... Infineon Technologies Ag

02/02/17 / #20170031239

Structuring over topography

In various embodiments, a reticle is provided. The reticle may include a feature. ... Infineon Technologies Ag

02/02/17 / #20170031005

Method and apparatus for calibrating an iq modulator

The present disclosure relates to a concept for calibrating an iq modulator. A calibration method comprises setting one or more control values of the iq modulator corresponding to a desired constellation point of a constellation diagram to generate an iq modulating signal; mixing the iq modulating signal with a carrier signal to generate an iq modulated transmit signal; transmitting the iq modulated transmit signal towards a predefined object at a predefined location; receiving a reflection of the iq modulated transmit signal from the predefined object; mixing the received reflection of the iq modulated transmit signal with the carrier signal to generate a down-converted receive signal; comparing amplitude and/or phase of the down-converted receive signal with the desired constellation point of the constellation diagram; and adjusting the one or more control values of the iq modulator until a deviation between the amplitude and/or phase of the received down-converted signal and the desired constellation point falls below a predefined threshold.. ... Infineon Technologies Ag

02/02/17 / #20170030890

Microfiltration device

A microfiltration device comprises a substrate having a first surface and a second surface opposite to the first surface. The substrate includes a cavity between the first surface and the second surface. ... Infineon Technologies Ag

02/02/17 / #20170030847

Method of examining a substrate and corresponding device

A method of examining a substrate is provided. The method may include: generating a temperature gradient along a surface of the substrate; detecting a heat radiation emitted from the substrate; and determining as to whether the substrate is damaged based on the detected heat radiation.. ... Infineon Technologies Ag

02/02/17 / #20170029311

Method of manufacturing a plurality of glass members, a method of manufacturing an optical member, and array of glass members in a glass substrate

A method of manufacturing a plurality of glass members comprises bringing a first main surface of a glass substrate in contact with a first working surface of a first mold substrate, the first working surface being provided with a plurality of first protruding portions, and bringing a second main surface of the glass substrate in contact with a second working surface of a second mold substrate, the second working surface being provided with a plurality of second protruding portions. The method further comprises controlling a temperature of the glass substrate to a temperature above a glass-transition temperature to form the plurality of glass members, removing the first and the second mold substrates from the glass substrate, and separating adjacent ones of the plurality of glass members.. ... Infineon Technologies Ag

01/26/17 / #20170026057

Method and decoder for determining an error vector for a data word according to a reed-muller code

A method for determining an error vector for a data word according to a reed-muller code includes determining the syndrome of the error vector according to the reed-muller code, expanding the syndrome with zeroes to 1 bit length less than the length of the reed-muller code, determining a code word of a simplex code of 1 bit length less than the length of the reed-muller code whose difference to the expanded syndrome has a weight below a first threshold or equal to or above a second threshold, expanding the difference between the determined code word and the expanded syndrome by a zero, and outputting the expanded difference as error vector if its weight is below the first threshold or outputting the inverted expanded difference as error vector if the weight of the expanded difference is equal to or above the second threshold.. . ... Infineon Technologies Ag

01/26/17 / #20170026020

System and method for a directional coupler

In accordance with an embodiment, a method of operating a directional coupler includes determining a coupled power variation by applying an input signal at an input port of the directional coupler, applying a first impedance at a transmitted port of the directional coupler, measuring a first coupled power at a coupled port of the directional coupler after applying the first impedance, applying a second impedance at the transmitted port of the directional coupler, measuring a second coupled power after applying the second impedance, and determining a difference between the first coupled power and the second coupled power to form the coupled power variation.. . ... Infineon Technologies Ag

01/26/17 / #20170025408

Semiconductor device with a reduced band gap zone

A semiconductor device comprising a source region being electrically connected to a first load terminal (e) of the semiconductor device and a drift region comprising a first semiconductor material (m1) having a first band gap, the drift region having dopants of a first conductivity type and being configured to carry at least a part of a load current between the first load terminal (e) and a second load terminal (c) of the semiconductor device, is presented. The semiconductor device further comprises a semiconductor body region having dopants of a second conductivity type complementary to the first conductivity type and being electrically connected to the first load terminal (e), a transition between the semiconductor body region and the drift region forming a pn-junction, wherein the pn-junction is configured to block a voltage applied between the first load terminal (e) and the second load terminal (c).the semiconductor body region isolates the source region from the drift region and includes a reduced band gap zone comprising a second semiconductor material (m2) having a second band gap that is smaller than the first band gap, wherein the reduced band gap zone is arranged in the semiconductor body region such that the reduced band gap zone and the source region exhibit, in a cross-section along a vertical direction (z), at least one of a common lateral extension range (lr) along a first lateral direction (x) and a common vertical extension range (vr) along the vertical direction (z).. ... Infineon Technologies Ag

01/26/17 / #20170025375

Electronic device with multi-layer contact

An electric device with a multi-layer contact is disclosed. In an embodiment, the electronic device includes a carrier, a semiconductor substrate attached to the carrier, and a layer system disposed between the semiconductor substrate and the carrier. ... Infineon Technologies Ag

01/26/17 / #20170025373

Method for positioning a semiconductor chip on a carrier and method for material-fit bonding of a semiconductor chip to a carrier

A semiconductor chip includes a semiconductor body having a bottom side and a top side opposite the bottom side, and passivation arranged on the top side. The semiconductor chip is positioned on the carrier by picking the semiconductor chip and placing the semiconductor chip on the carrier, and pressing the semiconductor chip onto the carrier by a pressing force in a pressing direction, such that the pressing force acts on the semiconductor chip only above one or more continuous chip metallization sections arranged on the top side. ... Infineon Technologies Ag

01/26/17 / #20170025357

Semiconductor chip having a dense arrangement of contact terminals

A semiconductor chip includes a semiconductor body having an active device region, one or more metallization layers insulated from the semiconductor body and configured to carry one or more of ground, power and signals to the active device region, and a plurality of contact terminals formed in or disposed on an outermost one of the metallization layers and configured to provide external electrical access to the semiconductor chip. A minimum distance between adjacent ones of the contact terminals is defined for the semiconductor chip. ... Infineon Technologies Ag

01/26/17 / #20170024304

Method for determining an intergrity of an execution of a code fragment and a method for providing an abstracted representation of a program code

A method for determining an integrity of an execution of a code fragment is provided. The method includes identifying a reference signature for the code fragment within an abstracted representation of a program code comprising the code fragment. ... Infineon Technologies Ag

01/26/17 / #20170023630

Sensor device, evaluation device and corresponding systems and methods

Various devices, systems and methods are disclosed where a noise signal component of a sensor signal is used to obtain information about a sensor device. A device may include an evaluation circuit that is configured to receive a sensor signal having a noise signal component, and the evaluation circuit is further configured to evaluate the noise signal component to obtain information about a sensor device generating the sensor signal.. ... Infineon Technologies Ag

01/26/17 / #20170023429

System and method for a mems sensor

According to an embodiment, a sensor circuit includes a sigma-delta analog to digital converter (adc), a dithered clock coupled to the sigma-delta adc, and a supply voltage circuit coupled to the sigma-delta adc. The sigma-delta adc is configured to be coupled to a low frequency transducer, and the dithered clock is configured to control of the sigma-delta adc based on a dithered clock signal.. ... Infineon Technologies Ag

01/26/17 / #20170022095

Method for finishing a glass product and glass product

Embodiments of the present invention provide a method for finishing a glass product including a glass layer, the glass layer comprising boron. The method includes the step of cleaning the glass layer in order to remove boron at least at the surface of the glass layer. ... Infineon Technologies Ag

01/26/17 / #20170020424

Test strip and system for determining measurement data of a probe fluid

A test strip comprises a test strip body comprising a fluid reservoir. The test strip further comprises a sensor unit configured to determine measurement data of a probe fluid in the fluid reservoir, and a communication unit electrically connected to the sensor unit, the communication unit including an antenna unit configured to transmit the measurement data. ... Infineon Technologies Ag

01/19/17 / #20170019104

Method for manufacturing a digital circuit and digital circuit

A method for manufacturing a digital circuit is described including forming a plurality of field effect transistor pairs, connecting the field effect transistors of the field effect transistor pairs such that in response to a first transition from a first state of two nodes of the digital circuit and in response to a second transition from a second state of the nodes of the digital circuit the nodes each have an undefined logic state when, for each field effect transistor pair, the threshold voltages of the field effect transistors of the field effect transistor pair are equal and setting the threshold voltages of the field effect transistors of the field effect transistor pairs such that the nodes each have a predetermined defined logic state in response to the first transition and in response to the second transition.. . ... Infineon Technologies Ag

01/19/17 / #20170019103

Low-power activation circuit with motion detector

The present disclosure relates to a method and apparatus to perform a low power activation of a system. In one embodiment, the apparatus includes a sensor element configured to output a sensor output signal corresponding to a sensed quantity to a digital difference detection circuit. ... Infineon Technologies Ag

01/19/17 / #20170018813

Method of manufacturing a battery, battery and integrated circuit

A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.. ... Infineon Technologies Ag

01/19/17 / #20170018812

Method of manufacturing a battery, battery and integrated circuit

A method of manufacturing a battery includes introducing a suspension comprising a solvent and fibers into a cavity for housing an electrolyte, drying the solvent, filling the electrolyte into the cavity, and closing the cavity.. . ... Infineon Technologies Ag

01/19/17 / #20170018633

Desaturable semiconductor device with transistor cells and auxiliary cells

A semiconductor device includes transistor cells that connect a first load electrode with a drift structure forming first pn junctions with body zones when a gate voltage applied to a gate electrode exceeds a first threshold voltage. First auxiliary cells in a vertical projection of and electrically connected with the first load electrode are configured to inject charge carriers into the drift structure at least in a forward biased mode of the first pn junctions. ... Infineon Technologies Ag

01/19/17 / #20170018614

Semiconductor device and a method for forming a semiconductor device

A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.. ... Infineon Technologies Ag

01/19/17 / #20170018557

Method for processing a carrier, a carrier, and a split gate field effect transistor structure

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.. . ... Infineon Technologies Ag

01/19/17 / #20170018548

Semiconductor device with a switchable and a non-switchable diode region

A semiconductor device includes at least one igbt cell region, at least one switchable free-wheeling diode region, and at least one non-switchable free-wheeling diode region integrated in the same semiconductor substrate as the at least one igbt cell region and the at least one switchable free-wheeling diode region.. . ... Infineon Technologies Ag

01/19/17 / #20170018461

Semiconductor device including at least one lateral igfet and at least one vertical igfet and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, first trenches and second trenches extending from the first surface into the semiconductor body, at least one lateral igfet including a first load terminal at the first surface, a second load terminal at the first surface and a gate electrode within the first trenches, and at least one vertical igfet including a first load terminal at the first surface, a second load terminal at the second surface and a gate electrode within the second trenches. The first trenches extend from the first surface into the semiconductor body deeper than a channel zone of the lateral igfet and confine the channel zone.. ... Infineon Technologies Ag

01/19/17 / #20170018457

Semiconductor device comprising an oxygen diffusion barrier and manufacturing method

An embodiment of a method of manufacturing a semiconductor device includes forming an oxygen diffusion barrier on a first surface of a czochralski or magnetic czochralski silicon substrate. A silicon layer is formed on the oxygen diffusion barrier. ... Infineon Technologies Ag

01/19/17 / #20170018353

Circuit arrangement

In accordance with various embodiments, a circuit arrangement may include a first circuit, which is designed for contactless communication, and a second circuit, which is designed in accordance with a predefined functionality. The circuit arrangement may further include at least one electronic component which in a first operating mode together with the first circuit implements the contactless communication and in a second operating mode together with the second circuit implements the predefined functionality.. ... Infineon Technologies Ag

01/19/17 / #20170016945

Apparatus and method for generating signals for esd stress testing an electronic device and system for performing an esd stress test of an electronic device

An apparatus and a method for generating signals for esd stress testing an electronic device are disclosed. In an embodiment the apparatus is configured to receive a source signal including a source pulse, delay the source pulse to generate a test signal including a test pulse with a pulse width in an esd time range and generate an auxiliary signal including an auxiliary pulse with a pulse width in the esd time range.. ... Infineon Technologies Ag

01/12/17 / #20170012639

Gain calibration for adc with external reference

. . Representative implementations of devices and techniques provide gain calibration for analog to digital conversion of time-discrete analog inputs. An adjustable capacitance arrangement is used to reduce or eliminate gain error caused by capacitor mismatch within the adc. ... Infineon Technologies Ag

01/12/17 / #20170012559

Techniques for controlling a brushless dc (bldc) electric motor

A controller for controlling a brushless dc (bldc) electric motor is described. The controller may include a hall control module and a timing module. ... Infineon Technologies Ag

01/12/17 / #20170012355

Vertical ferrite antenna including pre-fabricated connection members

A ferrite antenna is disclosed. The ferrite antenna includes a ferrite core a first main face, a second main face opposite to the first main face, and side faces connecting the first and second main faces. ... Infineon Technologies Ag

01/12/17 / #20170012034

Semiconductor device

According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.. . ... Infineon Technologies Ag

01/12/17 / #20170011989

Lead frame including u-notch

A lead frame includes a die paddle, a first lead, and a u-notch coupling the die paddle to the first lead. The u-notch extends from the die paddle and the first lead. ... Infineon Technologies Ag

01/12/17 / #20170011982

Insulated die

An insulated chip comprising a semiconductor chip comprising at least one chip pad and an electrically insulating layer surrounding at least part of the semiconductor chip.. . ... Infineon Technologies Ag

01/12/17 / #20170011963

Method for use in manufacturing a semiconductor device die

In one embodiment, a wafer includes a number of die areas each including a semiconductor device and dedicated to become a separate die. The die areas are disposed on a first face of the wafer and wherein adjacent die areas are distanced from one another. ... Infineon Technologies Ag

01/12/17 / #20170010649

Wakeup receiver circuit, electronic system and method to wakeup a device

A system includes multiple devices connected in a chain-like structure, each device of the multiple devices coupled to at least one bus. A device of the plurality of devices includes a circuit configured to detect activity of a differential signal of a bus coupled to the device to cause a wakeup of the device in response to the detection.. ... Infineon Technologies Ag

01/12/17 / #20170010301

Capacitive microelectromechanical device and method for forming a capacitive microelectromechanical device

A capacitive microelectromechanical device is provided. The capacitive microelectromechanical device includes a semiconductor substrate, a support structure, an electrode element, a spring element, and a seismic mass. ... Infineon Technologies Ag

01/12/17 / #20170010092

Apparatus for detecting a pre-aligning element at a wafer

An apparatus for detecting a pre-aligning element at a wafer and a method for pre-aligning a wafer are disclosed. In an embodiment, the apparatus includes a sensor arrangement configured to illuminate subsequent edge portions of the wafer edge and to output a first and a second sensor signal, wherein the first sensor signal is based on the transmitted fractions of the illumination and the second sensor signal is based on the reflected fractions of the illumination; and an evaluation unit configured to evaluate the first sensor signal and to determine a first position information indicating a coarse position of the pre-aligning element, and, after having determined the first position information, to determine a second position information based on the second sensor signal and the first position information, wherein the second position information indicates a fine position of the pre-aligning element.. ... Infineon Technologies Ag

01/12/17 / #20170008355

Pressure sensitive foil, a tire pressure sensor module, a tire, a method and a computer program for obtaining information related to deformations of a tire

Embodiments provide a pressure sensitive foil, a tire pressure sensor module, a tire, a method and a computer program for determining information related to deformations of a tire. A pressure sensitive foil configured to determine information related to deformations of a tire. ... Infineon Technologies Ag

01/05/17 / #20170005617

System and method for a voltage controlled oscillator

In accordance with an embodiment, a voltage controlled oscillator (vco) includes a vco core having a plurality of transistors and a varactor circuit that has a first end coupled to emitter terminals of the vco core and a second end coupled to a tuning terminal. The varactor circuit includes a capacitance that increases with increasing voltage applied to the tuning terminal with respect to the emitter terminals of the vco core.. ... Infineon Technologies Ag

01/05/17 / #20170005172

Electro-mechanical switching devices

A switching device includes an opening disposed in a substrate. A source is disposed adjacent the opening and has a contact surface parallel to sidewalls of the opening. ... Infineon Technologies Ag

01/05/17 / #20170005163

Power semiconductor device edge structure

A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active region configured to conduct a load current between the first load terminal and the second load terminal and a junction termination region surrounding the active region. ... Infineon Technologies Ag

01/05/17 / #20170004979

Chip arrangement and a method for manufacturing a chip arrangement

A chip arrangement is provided, the chip arrangement, including a carrier; a first chip electrically connected to the carrier; a ceramic layer disposed over the carrier; and a second chip disposed over the ceramic layer; wherein the ceramic layer has a porosity in the range from about 3% to about 70%.. . ... Infineon Technologies Ag

01/05/17 / #20170003181

Determining mechanical stress

Embodiments relate to circuitry and methods for determining and providing a mechanical stress level signal, including at least one bipolar junction transistor, wherein the circuitry is arranged to determine a first mechanical stress level based on a current gain of the at least one bipolar junction transistor, to determine a second mechanical stress level based on the current gain of the at least one bipolar junction transistor, and to provide the mechanical stress level signal based on the first mechanical stress level and the second mechanical stress level.. . ... Infineon Technologies Ag

01/05/17 / #20170003180

Micromechanical semiconductor sensing device

A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.. ... Infineon Technologies Ag








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