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Infineon Technologies Ag patents (2018 archive)


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Microelectromechanical loudspeaker

A microelectromechanical loudspeaker may include: a plurality of elementary loudspeakers each including a drive unit and a diaphragm deflectable by the drive unit, and a controller configured to respectively supply control signals to the drive units. The drive units may be respectively configured to deflect the corresponding diaphragms according to the respective control signals supplied by the controller to generate acoustic waves. ... Infineon Technologies Ag

Circuit and method for driving a laser diode

A driver circuit for driving a laser diode is described herein. In accordance with a first exemplary embodiment the driver circuit includes a first electronic switch connected to an output node that is configured to be operably connected to a laser diode. ... Infineon Technologies Ag

Laser diode module

A laser diode module is described herein. In accordance with a first exemplary embodiment, the laser diode module includes a first semiconductor die including at least one electronic switch, and a second semiconductor die including at least one laser diode. ... Infineon Technologies Ag

Semiconductor device with transistor cells and enhancement cells

A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. ... Infineon Technologies Ag

Method for processing a semiconductor workpiece and semiconductor device

A method for processing a semiconductor workpiece, including: forming a trench structure in a first region of a semiconductor workpiece, extending from a surface of the semiconductor workpiece to a first depth, forming at least one recess in a second region of the semiconductor workpiece laterally next to the first region, the recess extending from the surface of the semiconductor workpiece into the semiconductor workpiece to a second depth less than the first depth; forming a material layer over the semiconductor workpiece, the material layer filling the trench structure and recess and covering the surface of the semiconductor workpiece in the first region and in the second region; and planarizing the semiconductor workpiece to partially remove the material layer in the first region and in the second region, wherein the material layer remains in the trench structure and in the at least one recess.. . ... Infineon Technologies Ag

Silicon carbide semiconductor device and method of manufacturing

A semiconductor device includes a trench structure extending from a first surface into a silicon carbide semiconductor body. The trench structure includes an auxiliary electrode at a bottom of the trench structure and a gate electrode arranged between the auxiliary electrode and the first surface. ... Infineon Technologies Ag

Semiconductor package for multiphase circuitry device

In some examples, a device includes a power supply element and a reference voltage element, wherein the reference voltage element is electrically isolated from the power supply element. The device further includes a high-side semiconductor die including at least two high-side transistors, wherein each high-side transistor of the at least two high-side transistors is electrically connected to the power supply element. ... Infineon Technologies Ag

Ldmos transistor structure and method of manufacture

In an embodiment, a method includes forming a first opening in a front surface of a semiconductor substrate including a ldmos transistor structure, and covering the first opening with a first layer to form an enclosed cavity defined by material of the semiconductor substrate and the first layer. The material of the first layer lines sidewalls of the enclosed cavity.. ... Infineon Technologies Ag

Power semiconductor package having a parallel plate waveguide

A power semiconductor package includes a first group of semiconductor dies attached to a first side of a substrate and evenly distributed over a width of the substrate and a second group of semiconductor dies attached to the first side of the substrate and evenly distributed over the substrate width. Each die in the first and second groups has all terminals at one side which is attached to the first side of the substrate and an insulated or isolated face at a side opposite the side with the terminals. ... Infineon Technologies Ag

Method for manufacturing a semiconductor device comprising etching a semiconductor material

According to embodiments, a method for manufacturing a semiconductor device includes forming a mask comprising a pattern of inert structures on a side of a first main surface of a semiconductor substrate. A semiconductor layer is formed over the first main surface, and the semiconductor substrate is thinned from a second main surface opposite to the first main surface. ... Infineon Technologies Ag

Apparatus having a cavity structure and method for producing same

The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure. ... Infineon Technologies Ag

Light emitting diode driver for load and supply changes

In one example, a system includes a load module, a power module, a series module, and a control module. The power module is configured to generate a supply power. ... Infineon Technologies Ag

Transistor with integrated active protection

In accordance with an embodiment, a method of operating a transistor includes: switching the transistor on and off based on a control signal; monitoring a voltage of a collector node of the transistor; detecting whether the voltage of the collector node of the transistor is above a first threshold; and after detecting the voltage of the collector node of the transistor above the first threshold, regulating a voltage across a load path of the transistor to a first target voltage.. . ... Infineon Technologies Ag

Transistor device

Transistor devices are described that include a first transistor and a second transistor coupled in parallel between a first terminal and a second terminal. The second transistor is based on a wide bandgap semiconductor material. ... Infineon Technologies Ag

09/20/18 / #20180269865

Overvoltage protection

A drive device adapted to drive a semiconductor power device, wherein the drive device comprises a drive circuit comprising a first terminal adapted for connection to a first terminal of the power device, a gate terminal adapted to provide a driving signal for a gate terminal of the power device, a sensor for detecting overvoltage conditions at the first terminal of the power device, and wherein the drive circuit is adapted to modify the driving signal when the sensor detects an indication of an overvoltage condition, and wherein the drive circuit including the sensor is integrated onto a single substrate.. . ... Infineon Technologies Ag

09/20/18 / #20180269845

Reflection type phase shifter with active device tuning

A phase shifter includes first and second rf terminals, a reference potential terminal; a lumped element lc network connected to the first and second rf terminals and the reference potential terminal, and first and second active semiconductor devices connected to the lumped element lc network and to the reference potential terminal. Each of the first and second active semiconductor devices include a control terminal and first and second output terminals. ... Infineon Technologies Ag

09/20/18 / #20180269833

System and method for a dual-core vco

In accordance with an embodiment, a method of operating a voltage controlled oscillator (vco) includes generating a first oscillating signal in a first vco core and generating a second oscillating signal in a second vco core, such that the first oscillating signal and the second oscillating signal have a same frequency and a fixed phase offset. The vco includes the first vco core and the second vco core, and each vco core includes a pair of transistors. ... Infineon Technologies Ag

09/20/18 / #20180269304

N-channel bipolar power semiconductor device with p-layer in the drift volume

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. ... Infineon Technologies Ag

09/20/18 / #20180269285

Insulated gate bipolar transistor device having a fin structure

A transistor device includes a first silicon nanowire array-mosfet and a second silicon nanowire array-mosfet integrated with a bulk drift region. The first silicon nanowire array-mosfet is configured as an n-mosfet by substantially only accommodating an electron current, and the second silicon nanowire array-mosfet is configured as a p-mosfet by substantially only accommodating a hole electron current. ... Infineon Technologies Ag

09/20/18 / #20180269279

Semiconductor device including an ldmos transistor and a resurf structure

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≥100 ohm.cm, a front surface and a rear surface. An ldmos transistor is arranged in the semiconductor substrate. ... Infineon Technologies Ag

09/20/18 / #20180267408

Reticle and exposure method including projection of a reticle pattern into neighboring exposure fields

An exposure method includes projecting a reticle pattern into a first exposure field of a photoresist layer, wherein the reticle pattern includes first and second line patterns on opposite edges of the reticle pattern and wherein at least the first line pattern includes an end section through which light flux decreases outwards. The reticle pattern is further projected into a second exposure field of the photoresist layer, wherein a first tapering projection zone of the end section of the first line pattern in the second exposure field overlaps a projection area of the second line pattern in the first exposure field.. ... Infineon Technologies Ag

09/20/18 / #20180265354

Glass piece and methods of manufacturing glass pieces and semiconductor devices with glass pieces

A semiconductor element is formed in a mesa portion of a semiconductor substrate. A cavity is formed in a working surface of the semiconductor substrate. ... Infineon Technologies Ag

09/06/18 / #20180255613

Driver circuit for automatic detection and synchronization of dynamic loads

An example method for preventing overcurrent in light-emitting diode (led) chains comprises deactivating a current regulation control loop connected to a plurality of led chains; regulating, via a voltage regulation control loop, a forward voltage of the plurality of led chains; upon determining that a forward voltage of the plurality of led chains is equal to a target operating voltage for a subset of the plurality of led chains, bypassing at least one of the plurality of led chains such that only the subset of the plurality of led chains is connected to the current regulation control loop; and upon determining that an output current of the subset of the plurality of led chains is equal to a target operating current for the subset of the plurality of led chains: deactivating the voltage regulation control loop; and activating the current regulation control loop.. . ... Infineon Technologies Ag

09/06/18 / #20180255402

Capacitive mems device, capacitive mems sound transducer, method for forming a capacitive mems device, and method for operating a capacitive mems device

A capacitive mems device, a capacitive mems sound transducer, a method for forming a capacitive mems device and a method for operating a capacitive mems device are disclosed. In an embodiment the capacitive mems device includes a first electrode structure comprising a first conductive layer and a second electrode structure comprising a second conductive layer, wherein the second conductive layer at least partially opposes the first conductive layer, and wherein the second conductive layer includes a multiple segmentation which provides an electrical isolation between at least three portions of the second conductive layer.. ... Infineon Technologies Ag

09/06/18 / #20180254253

Package with different types of semiconductor dies attached to a flange

A multi-die package includes a thermally conductive flange, a first semiconductor die made of a first semiconductor material attached to the thermally conductive flange via a first die attach material, a second semiconductor die attached to the same thermally conductive flange as the first semiconductor die via a second die attach material, and leads attached to the thermally conductive flange or to an insulating member secured to the flange. The leads are configured to provide external electrical access to the first and second semiconductor dies. ... Infineon Technologies Ag

09/06/18 / #20180252594

Device and method for determining a temperature or a temperature-dependent value usable for determining the temperature, temperature sensor, pressure sensor and combination sensor

In accordance with an embodiment, a device includes an interface configured for obtaining at least one measurement signal from a temperature sensor. In a first time interval the at least one measurement signal comprises information about a temperature-dependent voltage difference between a first temperature-dependent voltage at a first diode of the temperature sensor and a second temperature-dependent voltage at a second diode of the temperature sensor. ... Infineon Technologies Ag

08/23/18 / #20180241298

Driver circuit with current feedback

A circuit arrangement is described herein. In accordance with one exemplary embodiment, the circuit arrangement includes at least one output channel configured to be operably coupled to at least one load that is to be driven by the circuit arrangement. ... Infineon Technologies Ag

08/23/18 / #20180241204

Integrated circuit device and a device for protection of a circuit

An integrated circuit device comprises at least one non-linear circuit. Further the integrated circuit device comprises a plurality of terminal circuits coupled to the non-linear circuit. ... Infineon Technologies Ag

08/23/18 / #20180240887

Semiconductor device and method of manufacturing the same

A method for use in manufacturing an electronic component comprises forming a layered structure comprising a dielectric structure layer, a channel layer and a gate layer. The dielectric structure layer comprises a first portion and a second portion that differ from one another in respect of fixed charges. ... Infineon Technologies Ag

08/23/18 / #20180240868

Semiconductor device having a buried layer

A semiconductor device includes a semiconductor substrate of a first conductivity type. A first semiconductor layer of a second conductivity type is on the semiconductor substrate. ... Infineon Technologies Ag

08/23/18 / #20180240672

Semiconductor device having a device doping region of an electrical device arrangement

A semiconductor device includes a device doping region of an electrical device arrangement disposed in a semiconductor substrate. A portion of the device doping region has a vertical dimension of more than 500 nm and a doping concentration of greater than 1*1015 dopant atoms per cm3. ... Infineon Technologies Ag

08/23/18 / #20180240517

Processing data in memory cells of a memory

A method for reading memory cells from a memory is stated, inter alia, in which physical values are determined from a number of n memory cells, wherein n is at least three, in which the physical values are at least partially compared with one another, in which k different digital memory cell values are assigned to the n memory cells on the basis of the compared physical values, and in which a code word of an n1-, . . ... Infineon Technologies Ag

08/23/18 / #20180239664

Method for determining information on an integrity of signal processing components within a signal path, signal processing circuit and electric control unit

A method for determining information on an integrity of signal processing components within a signal path includes adding an alive signal to a signal at a first position within the signal path and detecting an added alive signal corresponding to the alive signal at a second position within the signal path. Further, the method includes determining the information on the integrity based on the detected signal.. ... Infineon Technologies Ag

08/23/18 / #20180238963

Overriding a signal in a semiconductor chip

A semiconductor chip, including an intellectual property (ip) core; and a signal forcing circuit located within the ip core, or located at a boundary of the ip core coupling the ip core with another ip core, the signal forcing circuit configured to: transmit an input signal received by the ip core as an output signal; and in response to a trigger condition, forcing an override signal as the output signal.. . ... Infineon Technologies Ag

08/23/18 / #20180238711

Angle sensor with disturbance field suppression

An angle sensor may include a first sensing element to provide a first set of output signals associated with a magnetic field produced by a rotatable magnet. The first sensing element may be arranged at a first distance from a surface of the rotatable magnet along a given direction, and may be configured to operate in a non-saturated mode. ... Infineon Technologies Ag

08/23/18 / #20180237292

Semiconductor device, microphone and methods for forming a semiconductor device

A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. ... Infineon Technologies Ag

08/16/18 / #20180234774

Microelectromechanical microphone

A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.. ... Infineon Technologies Ag

08/16/18 / #20180234193

Phase and amplitude signal sensing circuit for radio frequency (rf) transmitters

A radio frequency (rf) transmitter for self-sensing power and phase of an rf signal is provided. A local oscillator (lo) is configured to generate a lo signal. ... Infineon Technologies Ag

08/16/18 / #20180234094

System and method for a driving a radio frequency switch

In accordance with an embodiment, a radio frequency (rf) switching circuit includes a plurality of series connected rf switch cells having a load path and a control node, and a switch driver coupled to the control node. Each of the plurality of series connected rf switch cells includes a switch transistor and a gate resistor having a first end coupled to a gate of the switch transistor and a second end coupled to the control node. ... Infineon Technologies Ag

08/16/18 / #20180233470

Handling thin wafer during chip manufacture

A manufacturing method is provided which comprises forming recesses in a front side of a wafer, connecting a first temporary holding body to the front side of the recessed wafer, thereafter thinning the wafer from a back side, connecting a second temporary holding body to the back side, and thereafter removing the first temporary holding body.. . ... Infineon Technologies Ag

08/16/18 / #20180233469

Device including semiconductor chips and method for producing such device

A device includes a first semiconductor chip including a first face, wherein a first contact pad is arranged over the first face. The device further includes a second semiconductor chip including a first face, wherein a first contact pad is arranged over the first face, wherein the first semiconductor chip and the second semiconductor chip are arranged such that the first face of the first semiconductor chip faces in a first direction and the first face of the second semiconductor chip faces in a second direction opposite to the first direction. ... Infineon Technologies Ag

08/16/18 / #20180233438

Leadframe, semiconductor package including a leadframe and method for forming a semiconductor package

A leadframe, that is to be incorporated into a semiconductor housing is provided. The leadframe may include a first die pad, a second die pad and a plurality of contact pads. ... Infineon Technologies Ag

08/16/18 / #20180233421

Semiconductor package, assembly and module arrangements for measuring gate-to-emitter/source voltage

One or more additional sense terminals are added to discrete semiconductor packages, assemblies and semiconductor modules, including power semiconductor modules, to sense accurately the voltage between the gate and emitter/source of voltage-controlled chips, inside the package, assembly or module.. . ... Infineon Technologies Ag

08/16/18 / #20180233399

Devices with backside metal structures and methods of formation thereof

A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. ... Infineon Technologies Ag

08/16/18 / #20180233026

Alarm handling circuitry and method of handling an alarm

In various embodiments, an alarm handling circuitry is provided. The alarm handling circuitry may include a first alarm processing circuit configured to process a first received alarm and to provide a first processed alarm response signal, a second alarm processing circuit configured to process a second received alarm and to provide a second processed alarm response signal, and an interface between the first alarm processing circuit and the second alarm processing circuit configured to input an alive indication signal from the first alarm processing circuit to the second alarm processing circuit indicating whether the first alarm processing circuit is operating.. ... Infineon Technologies Ag

08/16/18 / #20180230622

Silicon ingot

A silicon ingot has opposite ends. A specific resistance, measured along an axis between the opposite ends of the silicon ingot, has at least one point of inflection where a concavity of the specific resistance changes along the axis. ... Infineon Technologies Ag

08/09/18 / #20180226967

Sensor devices and methods for transmitting sensor data, apparatus and method for controlling a sensor device, apparatuses and methods for decoding a sensor signal

A sensor device includes an output driver configured to: adjust a first time interval of the output signal between a first signal edge of a first type and a first signal edge of a second type based on a first reference value; adjust a second time interval of the output signal between the first signal edge of the second type and a second signal edge of the first type based on a second reference value; adjust a third time interval of the output signal between the second signal edge of the first type and a second signal edge of the second type based on a first data value; and adjust a fourth time interval of the output signal between the second signal edge of the second type and a third signal edge of the first type based on a second data value.. . ... Infineon Technologies Ag

08/09/18 / #20180226963

Power switch control by supply voltage terminal

A power switch device includes a switch which is configured to switch a load signal between an on state and an off state. A first terminal and a second terminal of the power switch device are configured to provide a supply voltage to the power switch device. ... Infineon Technologies Ag

08/09/18 / #20180226817

Supply voltage selection circuitry

Supply voltage switching circuitry that is configured to dynamically switch between a battery supply voltage and a boost supply voltage, that is generated from the battery supply voltage, to power half-bridge driver circuitry based on an on-going evaluation of one or more system parameters.. . ... Infineon Technologies Ag

08/09/18 / #20180226471

Method of manufacturing semiconductor devices by using epitaxy and semiconductor devices with a lateral structure

Epitaxy troughs are formed in a semiconductor substrate, wherein a matrix section of the semiconductor substrate laterally separates the epitaxy troughs and comprises a first semiconductor material. Crystalline epitaxy regions of a second semiconductor material are formed in the epitaxy troughs, wherein the second semiconductor material differs from the first semiconductor material in at least one of porosity, impurity content or defect density. ... Infineon Technologies Ag

08/09/18 / #20180226276

Method for fabricating a semiconductor chip panel

A method for fabricating a semiconductor chip is disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips, wherein each semiconductor chip comprises a first main face, a second main face opposite to the first main face and side faces connecting the first and second main faces, placing the semiconductor chips on a carrier with the second main faces facing the carrier and applying an encapsulation material by transfer molding thereby forming the semiconductor chip panel, wherein the encapsulation material is applied so that the side faces of the semiconductor chips are covered with the encapsulation material while the first main faces are not.. ... Infineon Technologies Ag

08/09/18 / #20180226124

Method of operating a memory unit sector

Disclosed is a memory unit that includes a sector of memory cells. The sector includes a first memory cell configured to selectively take on a state representation of a first plurality of state representations and a second memory cell configured to selectively take on at least one of a second plurality of state representations. ... Infineon Technologies Ag

08/09/18 / #20180224873

Electric devices, integrated circuits, and methods for monitoring voltages

An electrical device includes a power supply circuit configured to provide a first voltage and a second voltage, and a first verification circuit configured to derive a first and a second internal voltage from the first voltage, to compare the first and second internal voltages, and to generate a first output signal based on the comparison. The electrical device includes a second verification circuit including a first input terminal for the first voltage and a second input terminal for the second voltage, and configured to compare the first and second voltages and to generate a second output signal based on the comparison. ... Infineon Technologies Ag

08/09/18 / #20180222749

Membrane components and method for forming a membrane component

A membrane component comprises a membrane structure comprising an electrically conductive membrane layer. The electrically conductive membrane layer has a suspension region and a membrane region. ... Infineon Technologies Ag

08/09/18 / #20180222744

Semiconductor device, pressure sensor, microphone, acceleration sensor and method for forming a semiconductor device

A semiconductor device includes at least one suspension region of a membrane structure, where the suspension region lies laterally in a first region of a surface of a semiconductor substrate; and a membrane region of the membrane structure, where a cavity is arranged vertically between the membrane region and at least one part of the semiconductor substrate, and the first region of the surface of the semiconductor substrate is formed by a surface of a shielding doping region of the semiconductor substrate.. . ... Infineon Technologies Ag

08/02/18 / #20180219535

Robust trimming scheme for low power rc oscillator compatible with high temperature operation

In some embodiments, the present disclosure relates to a frequency generator having a resistor network and a capacitor network. The capacitor network has a plurality of capacitors connected in parallel with one another. ... Infineon Technologies Ag

08/02/18 / #20180219476

Switched-capacitor circuit and method of operating a switched-capacitor circuit

A switched-capacitor circuit is described herein. In accordance with one exemplary embodiment the switched-capacitor circuit includes a first input node and a second input node and an input switch unit. ... Infineon Technologies Ag

08/02/18 / #20180219352

Driving light emitting elements with reduced voltage drivers

In one example, a method includes outputting, by a power supply and across a supply node and a ground node, a supply power signal; and selectively outputting, by a driver, a power signal to a second terminal of a light emitting element that has a first terminal and the second terminal, wherein the first terminal of the light emitting element is coupled to a load node, wherein a supply terminal of the driver is coupled to the supply node, wherein a ground terminal driver is coupled to the ground node, and wherein a difference between a potential of the supply node and a potential of the ground node is less than an activation voltage of the light emitting element.. . ... Infineon Technologies Ag

08/02/18 / #20180219272

Radio frequency device packages and methods of formation thereof

A semiconductor device package includes a radio frequency front end circuit configured to process radio frequency signals, a first antenna, an antenna substrate, and a first conductive barrier. The first antenna is configured to transmit/receive a first radio frequency signal. ... Infineon Technologies Ag

08/02/18 / #20180218992

Semiconductor device, method for fabricating a semiconductor device and method for reinforcing a die in a semiconductor device

A semiconductor device includes a semiconductor die having a first main face, a second main face and side faces connecting the first main face and the second main face. The semiconductor device also includes a conductive column arranged on the first main face of the semiconductor die and electrically coupled to the semiconductor die, and an insulating body arranged on the first main face of the semiconductor die. ... Infineon Technologies Ag

08/02/18 / #20180218177

Physical uncloneable function circuit

According to one embodiment, a physical uncloneable function circuit for providing a protected output bit is described including at least one physical uncloneable function circuit element configured to output a bit of a physical uncloneable function value, a physical uncloneable function bit output terminal and a coupling circuit connected between the physical uncloneable function circuit element and the physical uncloneable function bit output terminal configured to receive a control signal, supply the bit to the physical uncloneable function bit output terminal for a first state of the control signal and supply the complement of the bit to the physical uncloneable function bit output terminal for a second state of the control signal.. . ... Infineon Technologies Ag

08/02/18 / #20180217209

Battery temperature detection

A method and a temperature detection circuit are disclosed. An example of the method includes driving an alternating current with a first frequency into a battery and detecting an imaginary part of a battery impedance at the first frequency; driving an alternating current with a second frequency different from the first frequency into the battery and detecting an imaginary part of the battery impedance at the second frequency; and calculating an intercept frequency at which the imaginary part equals a predefined value at least based on the imaginary part obtained at the first frequency and the imaginary part obtained at the second frequency.. ... Infineon Technologies Ag

07/26/18 / #20180213602

Sensor circuit and method for compensating for temperature changes

A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. ... Infineon Technologies Ag

07/26/18 / #20180213334

Microelectromechanical microphone

A microelectromechanical microphone includes a planar first electrode that is formed, at least in portions, from an electrically conductive material, a planar second electrode that is formed, at least in portions, from an electrically conductive material and that is arranged at a distance from the first electrode, a spacer that is arranged between the first electrode and the second electrode, and a membrane that is arranged in a space defined between the first electrode and the second electrode and that is displaceable in the direction of at least one of the first electrode or the second electrode. The membrane has a membrane passage opening through which the spacer extends. ... Infineon Technologies Ag

07/26/18 / #20180213324

Micro-electro-mechanical system (mems) circuit and method for reconstructing an interference variable

A micro-electro-mechanical system (mems) circuit and a method for reconstructing an interference variable are provided. The mems circuit includes a mems device configured to generate a mems signal; a control circuit configured to detect a switched-on state or switched-off state of at least one device and configured to generate a control signal at least partly depending on the switched-on state or the switched-off state; a reconstruction filter configured to determine an interference signal that is partly generated by the at least one device, using the generated control signal; and a subtractor configured to subtract the determined interference signal from the mems signal.. ... Infineon Technologies Ag

07/26/18 / #20180212781

Secured daisy chain communication

An intermediate servant device connected in a daisy chain configuration with a set of devices is described. The intermediate servant device may be configured to receive, from a previous servant device of the set of servant devices, a request for data, a first response to the request for data, and authentication information for the first response to the request for data. ... Infineon Technologies Ag

07/26/18 / #20180212085

Semiconductor devices, a fluid sensor and a method for forming a semiconductor device

A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. ... Infineon Technologies Ag

07/26/18 / #20180211917

Semiconductor module comprising transistor chips, diode chips and driver chips arranged in a common plane

A semiconductor module is disclosed. In one example, the module includes a carrier, at least one semiconductor transistor disposed on the carrier, at least one semiconductor diode disposed on the carrier, at least one semiconductor driver chip disposed on the carrier, a plurality of external connectors, and an encapsulation layer covering the carrier, the semiconductor transistor, the semiconductor diode, and the semiconductor driver chip. ... Infineon Technologies Ag

07/26/18 / #20180211907

Semiconductor package with heat slug and rivet free die attach area

A method of forming a semiconductor device package includes providing a lead frame having a peripheral structure and a heat slug having an upper and lower surface, the heat slug being attached to the peripheral structure. A semiconductor die is attached to the heat slug. ... Infineon Technologies Ag

07/26/18 / #20180211821

Wafer chuck and processing arrangement

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.. . ... Infineon Technologies Ag

07/26/18 / #20180210852

Scalable multi-core system-on-chip architecture on multiple dice for high end microcontroller

A system for a multiple chip architecture that enables different system on-chip (soc) systems with varying compatibilities to interact as one soc via a transparent interface. The system address maps of the single socs are configured so that each provide a system address map of the two socs without overlap or address re-mapping when connected to one another via the transparent interface. ... Infineon Technologies Ag

07/26/18 / #20180210027

Semiconductor device testing

Methods and devices are provided. A device may comprise a main current path (11) between a terminal (10) and a supply voltage rail (15). ... Infineon Technologies Ag

07/26/18 / #20180209820

Sensor controller, sensor signal receiver, incremental magnetic speed sensor module, method for a sensor controller, method for a sensor signal receiver and computer program

A sensor controller for a sensor module includes at least one interface to obtain sensor information from the sensor module and to communicate with a sensor signal receiver. The sensor controller includes a control module to control the at least one interface. ... Infineon Technologies Ag

07/26/18 / #20180208461

Semiconductor element and methods for manufacturing the same

A semiconductor element includes a processed substrate arrangement including a processed semiconductor substrate and a metallization layer arrangement on a main surface of the processed semiconductor substrate. The semiconductor element further includes a passivation layer arranged at an outer border of the processed substrate arrangement.. ... Infineon Technologies Ag

07/26/18 / #20180208002

Tire pressure sensor modules, tire pressure monitoring system, wheel, methods and computer programs for providing information relating to a tire pressure

A first tire pressure sensor module is configured to provide information related to a pressure of a tire of a vehicle and comprises a pressure sensor configured to determine the information related to the pressure of the tire. The pressure module further includes a controller configured to selectively operate the tire pressure sensor module in an active state and in an inactive state, wherein an energy consumption of the tire pressure sensor module is lower in the inactive state than in the active state. ... Infineon Technologies Ag

07/19/18 / #20180205390

Gain calibration for adc with external reference

Representative implementations of devices and techniques provide gain calibration for analog to digital conversion of time-discrete analog inputs. An adjustable capacitance arrangement is used to reduce or eliminate gain error caused by capacitor mismatch within the adc. ... Infineon Technologies Ag

07/19/18 / #20180204808

Semiconductor device with circumferential structure and method of manufacturing

A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. ... Infineon Technologies Ag

07/19/18 / #20180204725

Method of manufacturing a silicon carbide semiconductor device by removing amorphized portions

A trench is formed that extends from a main surface into a crystalline silicon carbide semiconductor layer. A mask is formed that includes a mask opening exposing the trench and a rim section of the main surface around the trench. ... Infineon Technologies Ag

07/19/18 / #20180201511

Process for the formation of a graphene membrane component, graphene membrane component, microphone and hall-effect sensor

A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. ... Infineon Technologies Ag

07/19/18 / #20180201504

Mems device and method of manufacturing a mems device

A method for manufacturing a mems device is disclosed. Moreover a mems device and a module including a mems device are disclosed. ... Infineon Technologies Ag

07/12/18 / #20180198546

Synchronization mechanism for high speed sensor interface

A sensor may determine a sampling pattern based on a group of synchronization signals received by the sensor. The sampling pattern may identify an expected time for receiving an upcoming synchronization signal. ... Infineon Technologies Ag

07/12/18 / #20180198545

Synchronization mechanism for high speed sensor interface

A sensor may determine, based on two or more synchronization signals provided by a control device, an expected time for receiving an upcoming synchronization signal. The sensor may perform a measurement of a sensor signal at a point in time such that sensor data, corresponding to the measurement of the sensor signal at the point in time, is available at a selectable time interval prior to reception of the upcoming synchronization signal.. ... Infineon Technologies Ag

07/12/18 / #20180198460

Built-in self-test for adc

Representative implementations of devices and techniques provide a built-in self-test (bist) for an analog-to-digital converter (adc). Stimuli needed to test an adc are generated within the chip containing the adc. ... Infineon Technologies Ag

07/12/18 / #20180197982

Semiconductor device with a guard structure and corresponding methods of manufacture

A semiconductor device includes a guard structure located laterally between a first active area of a semiconductor substrate and a second active area of the semiconductor substrate. The guard structure includes a first doping region located at a front side surface of the semiconductor substrate, and a wiring structure electrically connecting the first doping region to a highly doped portion of a common doping region. ... Infineon Technologies Ag

07/12/18 / #20180197948

Power semiconductor device with charge balance design

A semiconductor body having first and second vertically spaced apart surfaces is formed. A gate trench that vertically extends from the first surface of the semiconductor body towards the second surface is formed. ... Infineon Technologies Ag

07/12/18 / #20180197766

Wafer carrier, method for manufacturing the same and method for carrying a wafer

A wafer carrier comprises a first foil, a second foil, and a chamber between the first and the second foil. The first foil has a perforation and is used for carrying the wafer. ... Infineon Technologies Ag

07/12/18 / #20180196501

System and method of gesture detection for a remote device

A method for operating a mobile device includes detecting a gesture by the mobile device. Detecting the gesture includes receiving a reflected millimeter wave signal by the mobile device, generating a first message in accordance with the detected gesture, and transmitting the first message from the mobile device to an external remote device. ... Infineon Technologies Ag

07/12/18 / #20180196080

Stray-field robust, twist-insensitive magnetic speed sensors

A magnetic sensor module includes a magnetic sensor having an in-plane axis and an out-of-plane axis, and including a differential pair of sensor elements spaced apart from each other. The differential pair of sensor elements are configured to generate measurement values in response to sensing a bias magnetic field. ... Infineon Technologies Ag

07/05/18 / #20180191147

Electronic switch and protection circuit

Disclosed is an electronic circuit and a method. The electronic circuit includes a plurality of electronic switches each including a load path and a control node, wherein the load paths are connected in parallel between a first load node and a second load node of the electronic circuit; a current sense circuit configured to sense a load current between the first load node and the second load node and to generate a current sense signal representing the load current; a drive circuit configured to drive the plurality of electronic switches based on at least one input signal; and an overload detector. ... Infineon Technologies Ag

07/05/18 / #20180190651

Semiconductor device and corresponding manufacturing method

A semiconductor device includes a semiconductor body having a first silicon carbide region and a second silicon carbide region which forms a pn-junction with the first silicon carbide region, a first metallization on a front side of the semiconductor body, a contact region that forms an ohmic contact with the second silicon carbide region, and a barrier-layer between the first metallization and the contact region and that is in ohmic connection with the first metallization and the contact region. The barrier-layer forms a schottky-junction with the first silicon carbide region, and includes molybdenum nitride or tantalum nitride. ... Infineon Technologies Ag

07/05/18 / #20180190650

Method of operating an igbt having switchable and non-switchable diode cells

A method of operating an igbt is described. The igbt has gate, emitter and collector terminals, and igbt cells, switchable diode cells, and non-switchable diode cells integrated in a semiconductor substrate, wherein each of the igbt cells and switchable diode cells includes an operable switchable channel region. ... Infineon Technologies Ag

07/05/18 / #20180190649

Semiconductor device with an igbt region and a non-switchable diode region

A semiconductor device includes a semiconductor substrate having a body layer arranged between a front side and a drift layer, and forming a pn-junction with the drift layer. A front metallization is on the front side in ohmic connection with the body layer, and a back metallization opposite is in ohmic connection with the drift layer. ... Infineon Technologies Ag

07/05/18 / #20180190557

Semiconductor device including an encapsulation material defining notches

A semiconductor device includes a first contact element, a second contact element, a semiconductor chip, and an encapsulation material. The first contact element is on a first side of the semiconductor device. ... Infineon Technologies Ag

07/05/18 / #20180190530

Frame mounting after foil expansion

An apparatus which comprises an expansion unit configured for expanding a foil, and a mounting unit configured for subsequently mounting the expanded foil on a frame and a workpiece, in particular a wafer, on the expanded foil.. . ... Infineon Technologies Ag

07/05/18 / #20180188308

Passive bridge circuit with oxide windows as leakage sink

Leakage current detection systems and detection methods are provided. A leakage current detection system includes a passive bridge circuit including a first branch having a first output and a second branch having a second output, a first output pad electrically connected to the first output, a second output pad electrically connected to the second output, a leakage surge structure disposed between the first output pad and the second output pad, where the leakage surge structure is connected to a low-ohmic node and is configured to draw a leakage current from the passive bridge circuit and pull voltages at the first and the second output pads in a same direction on a condition that the leakage current flows through at least one element of the passive bridge circuit, and a processing device configured to monitor for the leakage current and output a monitored result.. ... Infineon Technologies Ag

07/05/18 / #20180188213

Photoacoustic gas analyzer

A photoacoustic gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit into the gas chamber electromagnetic radiation with a time-varying intensity adapted to selectively excite gas molecules of n mutually different gas types the concentrations of which are to be determined in the gas received in the gas chamber, thereby generating acoustic waves, an acoustic-wave sensor configured to detect acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, and a control unit operatively connected to the radiation source and the acoustic-wave sensor. The control unit may be configured: to control the radiation source to emit electromagnetic radiation with a time-varying intensity and to modulate the frequency at which the intensity is varied with a modulation signal taking on at least n mutually different values, to receive from the acoustic-wave sensor signals indicative of detected acoustic waves generated by the electromagnetic radiation emitted by the radiation source into the gas to be analyzed, to determine at least n mutually different signal amplitudes associated with respective n mutually different frequencies at which the intensity of the emitted electromagnetic radiation is varied, and to determine from the determined signal amplitudes the concentrations of the n mutually different gas types.. ... Infineon Technologies Ag

07/05/18 / #20180188172

Gas analysis apparatus

An analysis apparatus includes a gas chamber for receiving a gas to be analysed, a source to emit radiation into the chamber. The radiation is to selectively excite molecules of the gas. ... Infineon Technologies Ag

07/05/18 / #20180188071

Sensor with interface for functional safety

A sensor interface operates to communicate a sensed quantity along one or more processing pathways and in different data representations. The signal representations can be swapped along one or more locations of the signal processing branches. ... Infineon Technologies Ag

06/28/18 / #20180184538

Method for producing an electronic module assembly and electronic module assembly

One aspect relates to a method for producing an electronic module assembly. According to the method, a curable first mass extending between a substrate assembly and a module housing is cured while a circuit carrier of the substrate assembly has at least a first temperature. ... Infineon Technologies Ag

06/28/18 / #20180184495

Thermal protection for light emitting devices

A device for thermal protection is described. The device may be configured to determine current temperature information for a set of light emitting diodes (leds), receive an indication of a requested light pattern for the set of leds, and determine predicted temperature information for the set of leds based on the current temperature information and the requested light pattern. ... Infineon Technologies Ag

06/28/18 / #20180183421

Voltage comparator arrangement, electronic component, chip card, embedded secure element

In various embodiments, an electronic component is provided. The electronic component may include a supply bus configured to provide a supply voltage for an electronic circuit. ... Infineon Technologies Ag

06/28/18 / #20180183327

Charge pump arrangement and method for operating a charge pump arrangement

A charge pump arrangement and methods for operating a charge pump arrangement are disclosed. According to various embodiments, a charge pump arrangement may include: a charge pump circuit configured to convert an input voltage into an output voltage based on a pump clock signal; a feedback path configured to provide a feedback signal representing the output voltage of the charge pump circuit; and a control circuit configured to receive a clock signal and to control the output voltage of the charge pump circuit by controlling the pump clock signal based on the feedback signal and the clock signal.. ... Infineon Technologies Ag

06/28/18 / #20180182710

Semiconductor arrangement with a sealing structure

A semiconductor arrangement includes a semiconductor body with a first surface, an inner region and an edge region, the edge region surrounding the inner region, an attachment layer spaced apart from the first surface of the semiconductor body in a first direction, an intermediate layer arranged between the first surface of the semiconductor body and the attachment layer, and at least one first type sealing structure. The sealing structure includes a first barrier, a second barrier, and a third barrier. ... Infineon Technologies Ag

06/28/18 / #20180182651

Common procedure of interconnecting electronic chip with connector body and forming the connector body

A method which comprises applying a common pressing force operative to interconnect an electronic chip with a connector body by an interconnect structure, and to contribute to a forming of the connector body.. . ... Infineon Technologies Ag

06/28/18 / #20180182643

Semiconductor module cooling system

A cooling apparatus includes a discrete module and a plastic housing. The discrete module incudes a semiconductor die encapsulated by a mold compound, a plurality of leads electrically connected to the semiconductor die and protruding out of the mold compound and a first cooling plate at least partly uncovered by the mold compound. ... Infineon Technologies Ag

06/28/18 / #20180180666

Integrated circuit device testing in an inert gas

A system includes an inert gas supply, a soak chamber, a test chamber, a transfer zone, and a heater. The soak chamber soaks an integrated circuit (ic) device in the inert gas prior to testing. ... Infineon Technologies Ag

06/28/18 / #20180180542

Photonic crystal sensor structure and a method for manufacturing the same

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.. ... Infineon Technologies Ag

06/21/18 / #20180177022

Pulse width modulated binary frequency shift keying

A control system that facilitates energy efficient management of building automation systems is disclosed. The control system comprises a source circuit configured to generate a modulated dc control signal comprising data modulated on a dc source signal having a power associated therewith and a load circuit configured to receive the modulated dc control signal. ... Infineon Technologies Ag

06/21/18 / #20180175947

Radio frequency device and corresponding method

According to an embodiment, a radio frequency device includes a phase locked loop circuit, and an automatic gain control circuit, where an output of an automatic gain control circuit is coupled to a reference signal input of the phase locked loop circuit.. . ... Infineon Technologies Ag

06/21/18 / #20180175909

Radio frequency device and corresponding method

Devices and methods determining phase offsets are disclosed. A first test signal is transmitted from a first rf circuit part to a second rf circuit part, where a phase difference between the first test signal and a reference signal (ref) is measured. ... Infineon Technologies Ag

06/21/18 / #20180175898

Rf transceiver with test capability

An rf front-end circuit of an rf transceiver is described herein. In accordance with one exemplary embodiment, the fronted circuit includes a local oscillator (lo) configured to generate an rf transmit signal, an rf output port coupled to the local oscillator, wherein the rf transmit signal is output at the rf output port, and a monitoring circuit receiving an input signal and configured to determine the phase of the input signal or the power of the input signal or both. ... Infineon Technologies Ag

06/21/18 / #20180175868

Generation of fast frequency ramps

A circuit includes an rf oscillator coupled in a phase-locked loop. The phase-locked loop is configured to receive a digital input signal, which is a sequence of digital words, and to generate a feedback signal for the rf oscillator based on the digital input signal. ... Infineon Technologies Ag

06/21/18 / #20180175855

Switch device and method

Devices and methods related to switches are discussed. An inverse current condition may be detected, and a voltage at a node associated with a switch driver may be driven to a predetermined voltage in case of detection of an inverse current condition.. ... Infineon Technologies Ag

06/21/18 / #20180175811

Compact class-f chip and wire matching topology

An amplifier circuit includes an rf input port, an rf output port, a reference potential port, and an rf amplifier having an input terminal and a first output terminal. An output impedance matching network electrically couples the first output terminal to the rf output port. ... Infineon Technologies Ag

06/21/18 / #20180175153

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes a transistor doping region of a vertical transistor structure arranged in a semiconductor substrate. Additionally, the semiconductor device includes a graphene layer portion located adjacent to at least a portion of the transistor doping region at a surface of the semiconductor substrate. ... Infineon Technologies Ag

06/21/18 / #20180175150

Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer

A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. ... Infineon Technologies Ag

06/21/18 / #20180174985

Semiconductor chip

According to one embodiment, a semiconductor chip is described including a semiconductor chip body and a semiconductor chip circuit on the body and including a first circuit path coupled to a first and a second node and including at least two gate-insulator-semiconductor structures and a second circuit path coupled to the first and the second node and including at least two gate-insulator-semiconductor structures. The first and the second circuit path are connected to set the first and the second node to complementary logic states. ... Infineon Technologies Ag

06/21/18 / #20180174946

Power semiconductor packages having a substrate with two or more metal layers and one or more polymer-based insulating layers for separating the metal layers

Power semiconductor packages described herein each include a substrate having two or more metal layers and one or more insulating layers for separating the metal layers. The substrate insulating layers are formed from a polymer material to reduce the cte mismatch between the substrate metal layers and the substrate insulating layers.. ... Infineon Technologies Ag

06/21/18 / #20180174936

Power semiconductor modules with protective coating

A semiconductor package is described which meets a plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. The semiconductor package includes a semiconductor die embedded in or covered by a molded plastic body, the molded plastic body satisfying only a subset of the plurality of predetermined electrical, mechanical, chemical and/or environmental requirements. ... Infineon Technologies Ag

06/21/18 / #20180174935

Semiconductor package and method for fabricating a semiconductor package

A method of fabricating a semiconductor package comprises providing a carrier, fabricating an opening in the carrier, attaching a semiconductor chip to the carrier and fabricating an encapsulation body covering the semiconductor chip.. . ... Infineon Technologies Ag

06/21/18 / #20180174840

Forming a metal contact layer on silicon carbide and semiconductor device with metal contact structure

A semiconductor device includes a silicon carbide semiconductor body and a metal contact structure. Interface particles including a silicide kernel and a carbon cover on a surface of the silicide kernel are formed directly between the silicon carbide semiconductor body and the metal contact structure. ... Infineon Technologies Ag

06/21/18 / #20180174640

Memory device and methods for controlling a memory assist function

According to one embodiment, a memory device is described including a memory array including a plurality of memory cells wherein each memory cell is coupled to a control line, a memory assist circuit configured to, when activated, apply a reduction of a voltage of the control line, a signal generator configured to generate a signal representing at least one of a process corner of the memory device, a supply voltage of the memory device, a temperature of the memory device and an aging of the memory device, a signal processing circuit configured to amplify the signal and a controller configured to activate the memory assist circuit based the amplified signal.. . ... Infineon Technologies Ag

06/21/18 / #20180174441

Apparatuses for encoding and decoding wheel speed sensor signals and methods for communicating encoded wheel speed sensor signals

A signal encoder for encoding a wheel speed sensor signal includes an input interface. The input interface is configured to receive a wheel speed sensor signal providing speed information and additional information. ... Infineon Technologies Ag

06/21/18 / #20180172801

Rf receiver with built-in test capabilities

A radar device comprises a test signal generator including a digital harmonic oscillator that generates a digital oscillator signal with a first spectral component; a first digital-to-analog-converter that generates an analog oscillator signal based on the digital oscillator signal. Furthermore, the radar device comprises at least one radar channel receiving the analog oscillator signal during one or more self-tests.. ... Infineon Technologies Ag

06/21/18 / #20180172739

Current sensing

Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.. ... Infineon Technologies Ag

06/21/18 / #20180172724

Acceleration sensor

Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (beol). ... Infineon Technologies Ag

06/21/18 / #20180172484

Sensor controller, sensor signal receiver and sensor system

A sensor controller for a sensor module includes at least one interface configured to obtain sensor information from the sensor module and to transmit a sensor signal to a sensor signal receiver. The sensor controller further includes a control module configured to control the interface. ... Infineon Technologies Ag

06/21/18 / #20180172474

Magnetic angle sensor device and method of operation

A magnetic angle sensing system is suggested comprising a first magnetic sensing device, a second magnetic sensing device, a third magnetic sensing device, a substrate comprising the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device, wherein the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device are each arranged such to be responsive to a magnetic field component that is perpendicular to a main surface of the substrate, wherein each or the first magnetic sensing device, the second magnetic sensing device and the third magnetic sensing device comprises the same number of magnetic sensing elements, wherein the second magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device clockwise around a reference point, wherein the third magnetic sensing device is arranged on the semiconductor surface rotated by 120° in view of the first magnetic sensing device counter-clockwise around the reference point.. . ... Infineon Technologies Ag

06/21/18 / #20180170745

Semiconductor device, microphone and method for producing a semiconductor device

A semiconductor device is proposed. The semiconductor device comprises a membrane structure having an opening. ... Infineon Technologies Ag

06/14/18 / #20180167000

Rectifier device

A rectifier device is described herein. In accordance with one example, the rectifier device includes a transistor that has a load current path and a diode connected parallel to the load current path. ... Infineon Technologies Ag

06/14/18 / #20180166999

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166971

Rectifier device

A rectifier is described herein. According to one example, the rectifier includes a semiconductor substrate and further includes an anode terminal and a cathode terminal connected by a load current path of a first mos transistor and a diode that is connected parallel to a load current path. ... Infineon Technologies Ag

06/14/18 / #20180166555

Silicon carbide vertical mosfet with polycrystalline silicon channel layer

A semiconductor device may include a semiconductor body of silicon carbide (sic) and a field effect transistor. The field effect transistor has the semiconductor body that includes a drift region. ... Infineon Technologies Ag

06/14/18 / #20180166338

Bimos device with a fully self-aligned emitter-silicon and method for manufacturing the same

A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. ... Infineon Technologies Ag

06/14/18 / #20180166324

Buried insulator regions and methods of formation thereof

A method of fabricating a semiconductor device includes forming a buried insulation region within a substrate by processing the substrate using etching and deposition processes. A semiconductor layer is formed over the buried insulation region at a first side of the substrate. ... Infineon Technologies Ag

06/14/18 / #20180164387

Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits

A sensor circuit includes a first magnetoresistor. The first magnetoresistor has a first resistance transfer function. ... Infineon Technologies Ag

06/14/18 / #20180164215

Gas analyzer

A gas analyzer may include: a gas chamber configured to receive a gas to be analyzed therein, a radiation source configured to emit electromagnetic radiation into the gas chamber, the electromagnetic radiation being adapted to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber, a collimator configured to collimate the electromagnetic radiation emitted by the radiation source, and a sensor configured to detect a physical quantity indicative of a degree of interaction between the electromagnetic radiation emitted by the radiation source and the gas to be analyzed.. . ... Infineon Technologies Ag

06/14/18 / #20180164131

Calibration of an angle sensor without a need for regular rotation

A device may obtain raw sensor data, collected by a sensing device, including a set of signal values and a set of temperature values corresponding to the set of signal values. The set of signal values may correspond to a magnetic field present at the sensing device. ... Infineon Technologies Ag

06/14/18 / #20180162183

Single axis earth magnetic field sensor for motion detection in tpms application

A sensor module is provided that includes a magnetic sensor and a microcontroller. The magnetic sensor is configured to measure a magnitude of a magnetic field component of an earth magnetic field projected on a sensing axis of the magnetic sensor and is configured to generate a measurement signal. ... Infineon Technologies Ag

06/07/18 / #20180159562

System and method for a radio frequency filter

In accordance with an embodiment, a circuit includes a plurality of filter circuits having a first port, a second port and a third port, where a second port of a first of the plurality of filter circuits is coupled to a first port of a second of the plurality of filter circuits, and each of the plurality of filter circuits includes a first passive filter, a second passive filter, a first coupler and a combining network. The first coupler includes an input port coupled to the first port, an isolated port coupled to the second port, a first phase shifted port coupled to the first passive filter and a second phase shifted port coupled to the second passive filter, and the combining network includes a first input coupled to the first passive filter, a second input coupled to the second passive filter, and an output coupled to the third port.. ... Infineon Technologies Ag

06/07/18 / #20180159219

Device system and method for radio frequency signal path calibration

Devices, methods and systems are disclosed relating to rf signals. A device may comprise a clock input terminal, a variable delay circuit coupled to the clock input terminal and a test terminal as well as a reference signal generator coupled to the variable delay circuit.. ... Infineon Technologies Ag

06/07/18 / #20180158941

Semiconductor device

In an embodiment, a semiconductor device includes a substrate, a group iii nitride based transistor arranged on a front surface of the substrate, and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the substrate, and conductive material extending from the front surface to the rear surface of the substrate. ... Infineon Technologies Ag

06/07/18 / #20180158937

Bipolar transistor with superjunction structure

A superjunction bipolar transistor includes an active transistor cell area that includes active transistor cells electrically connected to a first load electrode at a front side of a semiconductor body. A superjunction area overlaps the active transistor cell area and includes a low-resistive region and a reservoir region outside of the low-resistive region. ... Infineon Technologies Ag

06/07/18 / #20180158920

Semiconductor device with diode region and trench gate structure

A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 ev, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. ... Infineon Technologies Ag

06/07/18 / #20180158916

Semiconductor component having a doped substrate layer and corresponding methods of manufacturing

Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. ... Infineon Technologies Ag

06/07/18 / #20180158759

Chip package and a wafer level package

Various embodiments provide for a chip package including a carrier; a layer over the carrier; a further carrier material over the layer, the further carrier material comprising a foil; one or more openings in the further carrier material, wherein the one or more openings expose at least one or more portions of the layer from the further carrier material; and a chip comprising one or more contact pads, wherein the chip is adhered to the carrier via the one or more exposed portions of the layer.. . ... Infineon Technologies Ag

06/07/18 / #20180158534

Memory circuit and method of operating a memory circuit

In various embodiments, a memory circuit is provided. The memory circuit may include a plurality of electrically programmable memory cells arranged in an electrically programmable non-volatile memory cell array along a plurality of rows and a plurality of columns, a plurality of word lines, each word line coupled with a plurality of word portions of the plurality of memory cells, wherein each word portion is configured to store a data word, and at least one overlay word line coupled with a plurality of overlay portions, each overlay portion comprising a plurality of overlay memory cells, wherein each of the plurality of overlay portions comprises an overlay word, wherein the memory circuit is configured to read, for each of the plurality of word lines, from each of the word portions simultaneously with an overlay portion of the plurality of overlay portions, thereby providing, as an output of the read operation, a result of a logic operation performed on the data word and the overlay word.. ... Infineon Technologies Ag

06/07/18 / #20180156706

Apparatus for analysing the particulate matter content of an aerosol

An apparatus for analysing the particulate matter content of an aerosol includes an aerosol chamber configured to receive an aerosol, the particulate matter content of which should be analysed, at least one ultrasonic generator configured to produce ultrasonic waves in the aerosol received in the aerosol chamber, an ultrasonic detector configured to detect ultrasonic waves produced by the at least one ultrasonic generator in the aerosol, and an evaluator having a data exchange communication link with the ultrasonic detector and configured to ascertain the matter content on the basis of signals output by the ultrasonic detector. The ultrasonic generator and the ultrasonic detector are positioned relative to one another such that a path length to be traversed by ultrasonic waves between the ultrasonic generator and the ultrasonic detector is less than 1 cm.. ... Infineon Technologies Ag

05/31/18 / #20180153013

Modulated quasi-resonant peak-current-mode control

Driver circuitry is configured to generate a control signal for a switching device that controls supply of load current to a load. The driver circuitry includes current control circuitry, modulation circuitry, and signal generation circuitry. ... Infineon Technologies Ag

05/31/18 / #20180151765

Controlling of photo-generated charge carriers

Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region. ... Infineon Technologies Ag

05/31/18 / #20180151244

Memory circuit and method of operating a memory circuit

A memory circuit may include a plurality of electrically programmable memory cells arranged in a non-volatile memory cell array along a rows and columns, a plurality of word lines, each word line coupled with one or more memory cells, a plurality of non-volatile marking memory cells, wherein at least one word line of the plurality of word lines is associated with one or more marking memory cells, and a plurality of marking bit lines, each associated with marking memory cells, a plurality of marking source lines, each associated with marking memory cells, wherein, for marking memory cells, a physical connection from an associated marking source line and/or from an associated marking bit line to the marking memory cells defines those marking memory cells to a non-changeable state, wherein the marking memory cells are configured to identify the associated word line of respective marking memory cells in the non-changeable memory state.. . ... Infineon Technologies Ag

05/31/18 / #20180148623

Resin-impregnated boron nitride body and a method for producing a resin-impregnated boron nitride body

A resin-impregnated boron nitride body includes a polymer-derived boron nitride and a resin. A process for manufacturing such a resin-impregnated boron nitride body includes: polymerizing a boron nitride molecular precursor into a preceramic polymer shaping the preceramic polymer to form an infusible polymer body; submitting the polymer body to a thermal treatment to obtain a boron nitride body; impregnating the boron nitride body with a resin; and curing the resin.. ... Infineon Technologies Ag

05/31/18 / #20180148322

Semiconductor package with a through port for sensor applications and methods of manufacture

A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.. ... Infineon Technologies Ag

05/24/18 / #20180146566

Method for producing a semiconductor module arrangement

A method of producing a semiconductor module arrangement includes providing a first subassembly having a number n1 of first adjustment openings, a second subassembly having a number n2 of second adjustment openings and a third subassembly having a plurality of adjustment pins which are fixedly connected to one another, the first subassembly, the second subassembly and the third subassembly being independent of one another and not connected to one another. The first subassembly, the second subassembly and the third subassembly are arranged relative to one another in such a way that each of the adjustment pins engages into one of the first adjustment openings and/or into one of the second adjustment openings.. ... Infineon Technologies Ag

05/24/18 / #20180146512

Infrared emitter arrangement and method for producing an infrared emitter arrangement

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. ... Infineon Technologies Ag

05/24/18 / #20180146297

Method for operating a sensor, and sensor

In various embodiments, a method for operating a sensor is provided. The method includes intermittently generating an operating current in the sensor, generating a reactive current in the sensor when the operating current is not generated, and not generating the reactive current when the operating current is generated. ... Infineon Technologies Ag

05/24/18 / #20180145718

Transmitter/receiver module for millimeter wave 5g mimo communication systems

A transmit/receive module includes an integrated control circuit. The integrated control circuit includes an rfic input terminal, multiple pairs of i/o terminals, a power splitter/combiner having an input connected to the rfic input terminal, a plurality of phase shifters connected between outputs of the power splitter/combiner and the i/o terminals, and a power sensor connected to each one of the i/o terminals. ... Infineon Technologies Ag

05/24/18 / #20180145673

Switching circuitry, dc-interface and method for operating a switching circuitry

A switching circuitry is configured to provide, during an on-state, a connection between a first port and second port and to electrically disconnect, during an off-state, the first port from the second port. The switching interface comprises a first and a second cascode transistor element having an applicable operational voltage and comprising a control terminal, wherein the first cascode transistor element is connected with the first port of the switching interface and wherein the second cascode transistor element is connected with the second port of the switching interface. ... Infineon Technologies Ag

05/24/18 / #20180145641

Rf power detector circuits

A radio frequency (rf) power detector includes a first circuit having a first rectifying diode with a first terminal coupled to a first power supply voltage node. The first circuit also includes an input terminal coupled to a second terminal of the first rectifying diode, a first transistor having a first collector coupled to the second terminal of the first rectifying diode and a first emitter coupled to a reference voltage node, and a second transistor having a second emitter coupled to the reference voltage node and a second collector coupled to a second power supply voltage node. ... Infineon Technologies Ag

05/24/18 / #20180145161

Semiconductor device with separation regions

According to an embodiment of a semiconductor device, the device includes first and second trenches formed in a semiconductor body and an electrode disposed in each of the trenches. One of the electrodes is a gate electrode, and the other electrode is electrically disconnected from the gate electrode. ... Infineon Technologies Ag

05/24/18 / #20180145045

Terminal structure of a power semiconductor device

A power semiconductor device includes a semiconductor body configured to conduct a load current. A load terminal electrically connected with the semiconductor body is configured to couple the load current into and/or out of the semiconductor body. ... Infineon Technologies Ag

05/24/18 / #20180145043

Rf power package having planar tuning lines

An rf power package includes a substrate having a metallized part and an insulating part, an rf power transistor die embedded in or attached to the substrate, the rf power transistor die having a die input terminal, a die output terminal, an input impedance and an output impedance, a package input terminal formed in the metallized part or attached to the insulating part of the substrate, a package output terminal formed in the metallized part or attached to the insulating part of the substrate, and a first plurality of planar tuning lines formed in the metallized part of the substrate and electrically connecting the die output terminal to the package output terminal. The first plurality of planar tuning lines is shaped so as to transform the output impedance at the die output terminal to a higher target level at the package output terminal.. ... Infineon Technologies Ag

05/24/18 / #20180144982

Semiconductor devices and methods for manufacturing semiconductor devices

A method is disclosed for use in manufacturing semiconductor dice. The method comprises providing a wafer substrate that comprises dicing areas, providing a first etch stop material outside the dicing areas, and etching the wafer substrate down to the first etch stop material. ... Infineon Technologies Ag

05/24/18 / #20180144974

Method of wafer thinning and realizing backside metal structures

In accordance with an embodiment of the present invention, a method of fabricating a semiconductor device includes forming openings partially filled with a sacrificial material, where the openings extend into a semiconductor substrate from a first side. A void region is formed in a central region of the openings. ... Infineon Technologies Ag

05/24/18 / #20180144854

Rotary encoder with shielded magnet

A magnetic set-up for use in a rotary encoder is disclosed. The set-up includes a permanent magnet arrangement including at least one permanent magnet, which is rotatable with respect to a rotation axis, and a soft magnetic sleeve encompassing the rotation axis and thus the permanent magnet arrangement for shielding against external magnetic fields. ... Infineon Technologies Ag

05/24/18 / #20180143268

Current sensor positioning error correction using auxiliary hall cells

A current sensor may comprise a first hall cell, a second hall cell, a third hall cell, a fourth hall cell, and a fifth hall cell to a set of magnetic field values associated with a magnetic field generated by a current passing through a current rail. The second hall cell may be positioned at a first distance from the first hall cell, and the third hall cell may be positioned at a second distance from the first hall cell such that the third hall cell is positioned between the first hall cell and the second hall cell. ... Infineon Technologies Ag

05/24/18 / #20180141802

Micro-electro-mechanical system sensor devices

A mems sensor device includes an electrically conductive membrane and an electrically conductive closed loop structure. The closed loop structure is arranged in proximity to the membrane and is configured to reduce eddy currents in the membrane.. ... Infineon Technologies Ag

05/17/18 / #20180138353

Semiconductor wafers and semiconductor devices with barrier layer and methods of manufacturing

A semiconductor ingot is sliced to obtain a semiconductor slice with a front side surface and a rear side surface parallel to the front side surface. A passivation layer is formed directly on at least one of the front side surface and the rear side surface. ... Infineon Technologies Ag

05/17/18 / #20180138301

Power semiconductor transistor having fully depleted channel region

A power semiconductor transistor includes a trench extending into a semiconductor body along a vertical direction and having first and second trench sidewalls and a trench bottom, an electrode in the trench electrically insulated from the semiconductor body, drift and source regions of a first conductivity type, a semiconductor channel region of a second conductivity type laterally adjacent the first trench sidewall and separating the source and drift regions, and a guidance zone. The guidance zone includes a bar section of the second conductivity type extending along the second trench sidewall or along a sidewall of another trench in the vertical direction to a depth in the semiconductor body deeper than the trench bottom, and a plateau section of the second conductivity type adjoining the bar section and extending under the trench bottom towards the semiconductor channel region. ... Infineon Technologies Ag

05/17/18 / #20180138266

Sic-based superjunction semiconductor device

A method of producing a semiconductor device includes providing a semiconductor body including a semiconductor body material having a dopant diffusion coefficient that is smaller than the corresponding dopant diffusion coefficient of silicon. At least one first semiconductor region doped with dopants of a first conductivity type is produced in the semiconductor body, including by applying a first implantation of first implantation ions. ... Infineon Technologies Ag

05/17/18 / #20180138169

Semiconductor devices and methods for operating semiconductor devices

A semiconductor device includes a plurality of forward conducting insulated-gate bipolar transistor cells configured to conduct a current in a forward operating mode of the semiconductor device and to block a current in a reverse operating mode of the semiconductor device. The semiconductor device also includes a plurality of reverse conducting insulated-gate bipolar transistor cells configured to conduct a current both in the forward operating mode and in the reverse operating mode. ... Infineon Technologies Ag

05/17/18 / #20180138120

Semiconductor device with metallization structure on opposite sides of a semiconductor portion

A semiconductor device includes a semiconductor layer with a thickness of at most 50 μm. A first metallization structure is disposed on a first surface of the semiconductor layer. ... Infineon Technologies Ag

05/17/18 / #20180138111

Package with interconnections having different melting temperatures

A package comprising at least one electronic chip, a first heat removal body on which the at least one electronic chip is mounted by a first interconnection, a second heat removal body mounted on or above the at least one electronic chip by a second interconnection, and an encapsulant encapsulating at least part of the at least one electronic chip, part of the first heat removal body and part of the second heat removal body, wherein the first interconnection is configured to have another melting temperature than the second interconnection.. . ... Infineon Technologies Ag

05/17/18 / #20180138086

Substrate and method

In an embodiment, a substrate includes semiconductor material and a conductive via. The conductive via includes a via in the substrate, a conductive plug filling a first portion of the via, and a conductive liner layer that lines side walls of a second portion of the via and is electrically coupled to the conductive plug. ... Infineon Technologies Ag

05/17/18 / #20180136120

Radar spectroscopy based gas sensor

A gas sensor includes a transmitter that may transmit a first radar signal, associated with a resonance peak corresponding to a first gas, through a space including the first gas and a second gas. The first gas may absorb a portion of the first radar signal to create a second radar signal. ... Infineon Technologies Ag

05/17/18 / #20180136064

Sensor device including sensor unit for a gaseous medium

A sensor device includes a sensor unit sensitive for a property of a gaseous medium. The sensor unit is formed on a first surface of a sensor substrate. ... Infineon Technologies Ag

05/10/18 / #20180132024

System and method for signal read-out using source follower feedback

An embodiment amplifier circuit includes a pair of subcircuits that includes a first subcircuit and a second subcircuit, each of which includes a buffer amplifier and a feedback circuit that includes a feedback capacitor. The amplifier circuit also includes a pair of output terminals. ... Infineon Technologies Ag

05/10/18 / #20180131387

Program flow monitoring for deterministic firmware functions

The present disclosure relates to a safety system having a memory unit configured to store a series of executable instructions. In some embodiments, the executable instructions are grouped into code parts, and each code part is assigned a predefined code value. ... Infineon Technologies Ag

05/10/18 / #20180131298

Auto-synchronization of brushless dc motors

A controller for controlling a multiphase brushless direct current (bldc) motor is described. The controller may be configured to determine that the multiphase bldc motor is operating in a phase delay state in response to determining that an indication of a shunt current for the multiphase bldc motor satisfies a shunt current threshold and determine that the multiphase bldc motor is operating in a phase advance state in response to determining that a set of phase-to-ground voltages for the multiphase bldc motor does not indicate a zero-crossing point. ... Infineon Technologies Ag

05/10/18 / #20180130914

Graded-index structure for optical systems

An optical system and photo sensor pixel are provided. The photo sensor pixel includes a substrate including an active region and a peripheral region that is peripheral to the active region, an optical sensor disposed at the active region of the substrate and configured to receive light and output a measurement signal based on the received light, and an encapsulation layer disposed over the active region and the first peripheral region of the substrate. ... Infineon Technologies Ag

05/10/18 / #20180128694

Temperature sensing for usb type-c cables

According to an embodiment of a type-c usb cable, the type-c usb cable comprises a near side cable plug, a far side cable plug, a single emarker ic integrated in one of the cable plugs, the single emarker ic including an internal temperature sensing element, a temperature sensor integrated in the opposite cable plug as the single emarker ic, and a wire connecting the temperature sensor to the single emarker ic. The single emarker ic is configured to generate temperature measurement information based on temperature sensed by the internal temperature sensing element of the single emarker ic and temperature sensed by the temperature sensor and carried to the emarker ic over the wire that connects the temperature sensor to the single emarker ic.. ... Infineon Technologies Ag

05/10/18 / #20180127267

Mems sensor package systems and methods

Embodiments relate to sensor and sensing devices, systems and methods. In an embodiment, a micro-electromechanical system (mems) device comprises at least one sensor element; a framing element disposed around the at least one sensor element; at least one port defined by the framing element, the at least one port configured to expose at least a portion of the at least one sensor element to an ambient environment; and a thin layer disposed in the at least one port.. ... Infineon Technologies Ag

05/03/18 / #20180123823

Bus interface with bi-directional, one-wire communication and individual select lines

A system may include a plurality of slave devices connected to a master device via a bus interface that includes a communication line and a plurality of select lines. The communication line may connect the master device to each of the plurality of slave devices and may permit bi-directional, one-wire communication among the master device and the plurality of slave devices. ... Infineon Technologies Ag

05/03/18 / #20180122931

Semiconductor device and transistor cell having a diode region

According to an embodiment of a semiconductor device, the device includes a semiconductor body with a drift region and neighboring device cells integrated in the semiconductor body. Each device cell includes: a body region arranged between a source region and the drift region; a diode region and a pn junction between the diode region and the drift region; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; and a gate electrode arranged in the trench and dielectrically insulated from the semiconductor body by a gate dielectric. ... Infineon Technologies Ag

05/03/18 / #20180122918

Methods for forming a plurality of semiconductor devices on a plurality of semiconductor wafers

A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers is provided. The method includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. ... Infineon Technologies Ag

05/03/18 / #20180122895

Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donors

Crystal lattice defects are generated in a horizontal surface portion of a semiconductor substrate and hydrogen-related donors are formed in the surface portion. Information is obtained about a cumulative dopant concentration of dopants, including the hydrogen-related donors, in the surface portion. ... Infineon Technologies Ag

05/03/18 / #20180122720

Package with vertically spaced partially encapsulated contact structures

A package comprising at least one electronic chip, an encapsulant encapsulating at least part of the at least one electronic chip, a first electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one first terminal of at least one of the at least one electronic chip, and a second electrically conductive contact structure extending partially within and partially outside of the encapsulant and being electrically coupled with at least one second terminal of at least one of the at least one electronic chip, wherein at least a portion of the first electrically conductive contact structure and at least a portion of the second electrically conductive contact structure within the encapsulant are spaced in a direction between two opposing main surfaces of the package.. . ... Infineon Technologies Ag

05/03/18 / #20180121369

Data processing device and method for cryptographic processing of data

According to an embodiment, a data processing device is described comprising a deformer configured to deform a first data block in accordance with a first seed, a seed generator configured to generate a sequence of second seeds, wherein the sequence of second seeds comprises the first seed, a cryptographic processor configured to receive the deformed first data block and, for each second seed, to deform the deformed first data block in accordance with the second seed, to generate a sequence of second data blocks and to cryptographically process each second data block of the sequence of second data blocks to generate a sequence of processed data blocks and an extractor configured to extract a result of the cryptographic processing of the first data block from the sequence of processed data blocks.. . ... Infineon Technologies Ag

05/03/18 / #20180121272

Deterministic code fingerprinting for program flow monitoring

A programmable system with program flow monitoring is provided. A memory is configured to store a set of instructions, where the instructions are configured to be executed in a predefined order. ... Infineon Technologies Ag

05/03/18 / #20180120266

Photoacoustic gas detector

A photoacoustic gas detector may include: a gas chamber configured to receive a gas to be analyzed therein, an excitation element configured to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber in a time-varying fashion, thereby generating pressure differences, a sensor configured to detect pressure differences generated by the excitation element, and a pump configured to pump gas between the exterior of the photoacoustic gas detector and the gas chamber.. . ... Infineon Technologies Ag

04/19/18 / #20180109892

System and method for a transducer

According to an embodiment, a transducer system includes a transducing element and a symmetry detection circuit. The transducing element includes a signal plate, a first sensing plate, and a second sensing plate. ... Infineon Technologies Ag

04/19/18 / #20180109254

Controlling at least two transistors

A device is suggested comprising at least two transistors, each of the transistors comprising a current path and a control terminal, wherein the current paths of the at least two transistors are arranged in parallel, wherein the control terminals of the at least two transistors are connected to a control node via at least one voltage drop component. Also, a method to efficiently control at least two transistors is provided.. ... Infineon Technologies Ag

04/19/18 / #20180109251

Driver circuit for electronic switch

A driver circuit for an electronic switch is described herein. According to one embodiment the driver circuit includes an input buffer with an input node for receiving a buffer input signal, a pull-down circuit coupled to the input node and a ground node, and a pull-up circuit coupled to the input node and a supply node. ... Infineon Technologies Ag

04/19/18 / #20180109206

Plate, transducer and methods for making and operating a transducer

A plate, a transducer, a method for making a transducer, and a method for operating a transducer are disclosed. An embodiment comprises a plate comprising a first material layer comprising a first stress, a second material layer arranged beneath the first material layer, the second material layer comprising a second stress, an opening arranged in the first material layer and the second material layer, and an extension extending into opening, wherein the extension comprises a portion of the first material layer and a portion of the second material layer, and wherein the extension is curved away from a top surface of the plate based on a difference in the first stress and the second stress.. ... Infineon Technologies Ag

04/19/18 / #20180108675

Integrated circuit including buried cavity and manufacturing method

In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. ... Infineon Technologies Ag

04/19/18 / #20180108648

Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure

According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.. . ... Infineon Technologies Ag

04/19/18 / #20180108622

Rf module

In accordance with an embodiment, an rf module includes a bulk semiconductor substrate with at least one integrated rf component integrated in a first main surface region of the bulk semiconductor substrate; an insulator structure surrounding a side surface region of the bulk semiconductor substrate; a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure; and a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator structure include different materials.. . ... Infineon Technologies Ag

04/19/18 / #20180108616

Device having substrate with conductive pillars

A device includes a substrate that includes conductive structures and has a first surface that is opposite to a second surface. Conductive pillars are built up over and electrically coupled to at least one of the conductive structures. ... Infineon Technologies Ag

04/19/18 / #20180108567

Semiconductor device and a method for forming a semiconductor device

A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. ... Infineon Technologies Ag

04/19/18 / #20180106891

3di sensor depth calibration concept using difference frequency approach

A three-dimensional image 3di system includes a modulator configured to generate a first modulation signal and a second modulation signal having a predetermined frequency difference, an illumination source configured to generate a light signal modulated by the first modulation signal, and a sensor core including a pixel array modulated by the second modulation signal. At least one pixel of the pixel array is configured to receive a reflected modulated light signal and to demodulate the reflected modulated light signal using the second modulation signal during an image acquisition to generate a measurement signal. ... Infineon Technologies Ag

04/12/18 / #20180103325

Sound transducer structure and method for manufacturing a sound transducer structure

For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is applied on a surface of the membrane material and recesses are formed in the sound transducing region of the membrane material. ... Infineon Technologies Ag

04/12/18 / #20180102786

Receiver, sender, method for retrieving an additional datum from a signal and method for transmitting a datum and an additional datum in a signal

A receiver includes a receiver circuit to receive a first transition in a first direction, a second transition in a second, different direction after the first transition and a third transition in the first transition after the second transition of a signal. A first time period between the first and third transitions is indicative of a datum to be received. ... Infineon Technologies Ag

04/12/18 / #20180102423

Semiconductor device having a variable carbon concentration

A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. ... Infineon Technologies Ag

04/12/18 / #20180102302

Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet

A chip carrier which comprises a thermally conductive and electrically insulating sheet, a first electrically conductive structure on a first main surface of the sheet, and a second electrically conductive structure on a second main surface of the sheet, wherein the first electrically conductive structure and the second electrically conductive structure extend beyond a lateral edge of the sheet.. . ... Infineon Technologies Ag

04/12/18 / #20180102300

Connectable package extender for semiconductor device package

A semiconductor packaging system includes a semiconductor device package having a semiconductor chip with two or more terminals and a protective structure encapsulating and electrically insulating the semiconductor chip. Two or more electrical conductors that are each electrically connected to one of the terminals extend to an outer surface of the protective structure. ... Infineon Technologies Ag

04/12/18 / #20180101758

Multicolored logo on smart card modules

In various embodiments, a smart card module is provided. The smart card module may include an electronic circuit in or on a carrier, a smart card module contact layer, which is coupled to the electronic circuit and provides a plurality of smart card module contacts, a mirror layer on the smart card module contact layer, said mirror layer at least partly covering the smart card module contacts, and an optically translucent, electrically conductive oxide layer, which covers the mirror layer. ... Infineon Technologies Ag

04/12/18 / #20180101458

System on chip integrity verification method and system

Methods and systems for checking the integrity of a system on chip (soc) are described. The soc can include a controller and one or more registers. ... Infineon Technologies Ag

04/12/18 / #20180101145

Overtemperature condition identified using a signal characteristic

A sensor may bias a signal to have a characteristic. The characteristic of the signal may depend on a temperature of the sensor such that the characteristic of the signal is outside of a permitted range, associated with the characteristic, when the temperature of the sensor satisfies a temperature threshold. ... Infineon Technologies Ag

04/12/18 / #20180099867

Mems device and mems vacuum microphone

In accordance with an embodiment, a mems device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.. ... Infineon Technologies Ag

04/05/18 / #20180097425

Multi-gate half-bridge circuit and package

In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including a first load terminal electrically connected to the second load terminal of the first switch, a second load terminal, and a control terminal.. ... Infineon Technologies Ag

04/05/18 / #20180097398

Current reduction for activated load

In one example, a circuit includes an input, an output, and a control module. The input is configured to receive a control signal indicating whether to activate or deactivate a load. ... Infineon Technologies Ag

04/05/18 / #20180097093

Power semiconductor device

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body having a front side, a backside, a first load terminal, and a drift region. ... Infineon Technologies Ag

04/05/18 / #20180097074

Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench, performing an ion implantation process, forming a cover layer, and patterning the covering layer, thereby forming an uncovered area and a covered area of the oxide layer, respectively. The method further includes performing an isotropic etching process thereby removing portions of the uncovered area of the oxide layer and removing a part of a surface portion of the covered area adjacent to the uncovered portions, and removing remaining portions of the covering layer.. ... Infineon Technologies Ag

04/05/18 / #20180097064

Semiconductor device, silicon wafer and method of manufacturing a silicon wafer

A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping in the n-type silicon ingot by 10% to 80%; slicing the silicon ingot; forming hydrogen related donors in the silicon wafer by irradiating the silicon wafer with protons; and annealing the silicon wafer subsequent to the forming of the hydrogen related donors in the silicon wafer.. . ... Infineon Technologies Ag

04/05/18 / #20180096984

Method for manufacturing an electronic device and electronic device

A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures with each other; mounting the semiconductor carrier on a support carrier with the first side of the semiconductor carrier facing the support carrier; thinning the semiconductor carrier from a second side opposite the first side; and removing material of the semiconductor carrier in a separation region between the first and second vertically integrated electronic structures to separate a first semiconductor region of the first vertically integrated electronic structure from a second semiconductor region of the second vertically integrated electronic structure with the first and second vertically integrated electronic structures remaining electrically connected with each other via the electrical connection layer.. . ... Infineon Technologies Ag

04/05/18 / #20180096966

Multi-purpose non-linear semiconductor package assembly line

A method of producing packaged semiconductor devices includes providing a first packaging substrate panel. A second packaging substrate panel is provided. ... Infineon Technologies Ag

04/05/18 / #20180096924

Chip packages, chip arrangements, a circuit board, and methods for manufacturing chip packages

A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating material and in electrical connection with the chip; a further electrically insulating material disposed over a chip carrier bottom side; wherein an electrically conductive contact region on the chip carrier bottom side is released from the further electrically insulating material.. . ... Infineon Technologies Ag

04/05/18 / #20180096919

Chip carrier configured for delamination-free encapsulation and stable sintering

A chip carrier for carrying an electronic chip, wherein the chip carrier comprises a mounting section configured for mounting an electronic chip by sintering, and an encapsulation section configured for being encapsulated by an encapsulant.. . ... Infineon Technologies Ag

04/05/18 / #20180095145

Magnetic field sensor circuit in package with means to add a signal from a coil

Sensor devices, systems and methods are provided, including a first magnetic sensor configured to measure a first magnetic field in a first frequency range and output a first sensor signal based on the measured first magnetic field, a second magnetic sensor configured to measure a second magnetic field in a second frequency range and output a second sensor signal based on the measured second magnetic field, and a sensor circuit configured to receive the first and the second sensor signals, combine the first and the second sensor signals, and output a combined sensor signal. The first magnetic sensor and the second magnetic sensor are configured to share a cross-over frequency.. ... Infineon Technologies Ag

04/05/18 / #20180093927

Method for producing a metal-ceramic substrate, and a metal-ceramic substrate

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces and/or contact surfaces. The method further includes filling the at least one trench-shaped intermediate space with an electrically insulating filler material, and covering first edges of the metallization regions facing and adjoining the surface side of the ceramic layer in the at least one trench-shaped intermediate space, as well as at least one second edge of the metallization regions facing away from the surface side of the ceramic layer in the at least one trench-shaped intermediate space, by the electrically insulating filler material.. ... Infineon Technologies Ag

03/29/18 / #20180091149

Circuit and method for checking the integrity of a control signal

. . According to an embodiment, a circuit is described comprising a plurality of flip-flops, a control circuit configured to provide a control signal to each flip-flop of the plurality of flip-flops and an integrity checking circuit connected to the control circuit and to the plurality of flip-flops configured to check whether the flip-flops receive the control signal as provided by the control circuit.. . ... Infineon Technologies Ag

03/29/18 / #20180090928

System and method for power supply ripple compensation

According to an embodiment, a power compensation circuit is configured to be coupled to a power supply. The power compensation circuit includes a measurement circuit and a compensation circuit. ... Infineon Technologies Ag

03/29/18 / #20180090924

Power switch device

Power switch devices and methods are provided where an undervoltage event in a supply voltage is detected. Information regarding the undervoltage event is stored in a memory element. ... Infineon Technologies Ag

03/29/18 / #20180090594

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

A semiconductor device includes a semiconductor mesa having source zones and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are provided on opposite sides of the semiconductor mesa, at least one of the electrode structures having a gate electrode configured to control a charge carrier flow through the at least one body zone. ... Infineon Technologies Ag

03/29/18 / #20180090565

Semiconductor device and method for forming a semiconductor device

A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. ... Infineon Technologies Ag

03/29/18 / #20180090455

Semiconductor device including a ldmos transistor, monolithic microwave integrated circuit and method

In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an ldmos transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.. . ... Infineon Technologies Ag

03/29/18 / #20180088042

Method and assembly for determining the carbon content in silicon

A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. ... Infineon Technologies Ag

03/29/18 / #20180087930

True-power-on and diagnostic-capable incremental interface for angular sensors

The current disclosure relates to an angular sensor. The angular sensor includes a sensing module, a digital processor and an incremental interface. ... Infineon Technologies Ag

03/29/18 / #20180087889

Magnetic angle sensor device and method of operation

A magnetic angle sensor device and a method for operating such device is provided. The magnetic angle sensor device includes a shaft rotatable around a rotation axis; a magnetic field source coupled to the shaft; a first magnetic angle sensor configured to generate a first signal that represents a first angle based on a first diametric magnetic field from the magnetic field source applied to the first magnetic angle sensor; a second magnetic angle sensor configured to generate a second signal that represents a second angle based on a second diametric magnetic field from the magnetic field source applied to the second magnetic angle sensor; and a combining circuit configured to determine a combined rotation angle based on the first signal and on the second signal.. ... Infineon Technologies Ag

03/29/18 / #20180087888

Magnetic angle sensor device and method of operation

An embodiment relates to a magnetic angle sensor device comprising a first group of magnetic angle sensors and a second group of magnetic angle sensors, wherein the first group of magnetic angle sensors and the second group of magnetic angle sensors are located on different positions along a straight line, wherein the first group of magnetic angle sensors comprises at least one first type of angle sensor and at least one second type of angle sensor, wherein the second group of magnetic angle sensors comprises the at least one first type of angle sensor and the at least one second type of angle sensor, wherein the at least one first type of angle sensor is sensitive to detect a first magnetic field component in a first direction and the at least one second type of angle sensor is sensitive to detect a second magnetic field component in a second direction, and wherein a combined rotation angle is determined based on the detected first magnetic field components and the detected second magnetic field components.. . ... Infineon Technologies Ag

03/29/18 / #20180086632

Temporary mechanical stabilization of semiconductor cavities

A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap sheet covering the cavities, singulating the temporary panel into a plurality of semiconductor devices, fabricating an embedded wafer by embedding the semiconductor devices in an encapsulant, removing the cap sheet of each one of the semiconductor devices, and singulating the embedded wafer into a plurality of electronic devices.. ... Infineon Technologies Ag

03/29/18 / #20180086630

Method for processing a monocrystalline substrate and micromechanical structure

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.. ... Infineon Technologies Ag

03/22/18 / #20180084343

Circuit arrangement with an optimized frequency response and method for calibrating a circuit arrangement

In various embodiments, a circuit arrangement includes a calibration filter set up to receive a signal based on a first signal and to provide a calibrated signal, the first signal being a signal which is provided by an analog/digital converter and is based on an analog signal, the analog signal being provided by at least one sensor of a sensor arrangement, a filter arrangement set up to receive a signal based on the first signal and to provide a second signal, and a controller set up to select a sensor-specific control signal dependent on the frequency response of the sensor from a plurality of control signals and to provide the calibration filter with said signal, the calibrated signal being based on the first signal and the sensor-specific control signal and corresponding or substantially corresponding to a predefined spectral mask in a predefined frequency range.. . ... Infineon Technologies Ag

03/22/18 / #20180083720

Phase and amplitude signal sensing circuit for radio frequency (rf) transmitters

A radio frequency (rf) transmitter for self-sensing power and phase of an rf signal is provided. A local oscillator (lo) is configured to generate a lo signal. ... Infineon Technologies Ag

03/22/18 / #20180083649

Analog/digital conversion with analog filtering

A circuit (100) comprises an input terminal (141) which is configured to receive an analog input signal (142). The circuit (100) also comprises a combination element (601) which is configured to combine a number of time-displaced signal values of the input signal (142) to form an analog combination signal (144). ... Infineon Technologies Ag

03/22/18 / #20180083107

Semiconductor wafer and method

In an embodiment, a method of planarising a surface includes applying a first layer to a surface including a protruding region such that the first layer covers the surface and the protruding region, removing a portion of the first layer above the protruding region and forming an indentation in the first layer above the protruding region, the protruding region remaining covered by material of the first layer, and progressively removing an outermost surface of the first layer to produce a planarised surface.. . ... Infineon Technologies Ag

03/22/18 / #20180083097

Diode structure of a power semiconductor device

A power semiconductor device includes a semiconductor body coupled to first and second load terminals. The body includes: at least a diode structure configured to conduct a load current between the terminals and including an anode port electrically connected to the first load terminal and a cathode port electrically connected to the second load terminal; and drift and field stop regions of the same conductivity type. ... Infineon Technologies Ag

03/22/18 / #20180082925

Package cooled with cooling fluid and comprising shielding layer

A package which comprises at least one electronic chip, an encapsulant encapsulating at least part of the at least one electronic chip, and a shielding layer on at least part of an external surface of the encapsulant configured for shielding an interior of the package with regard to cooling fluid for removing thermal energy from the at least one electronic chip.. . ... Infineon Technologies Ag

03/22/18 / #20180082898

Methods for splitting semiconductor devices and semiconductor device

A method for splitting a semiconductor wafer includes incorporating hydrogen atoms into at least a splitting region of a semiconductor wafer. The splitting region includes a concentration of nitrogen atoms higher than 1·1015 cm−3. ... Infineon Technologies Ag

03/22/18 / #20180082882

Wafer chuck, use of the wafer chuck and method for testing a semiconductor wafer

A wafer chuck configured to support a wafer during a wafer test procedure comprises a contact portion for supporting the wafer while being in contact with the wafer. The contact portion is made of a conductive material, the conductive material having a melting point larger than 1500° c.. ... Infineon Technologies Ag

03/22/18 / #20180082853

Method of planarising a surface

In an embodiment, a method of planarising a surface includes applying a first layer to a surface including a protruding region including at least one compound semiconductor and a stop layer on an upper surface such that the first layer covers the surface and the protruding region, removing a portion of the first layer above the protruding region and forming an indentation in the first layer above the protruding region, the protruding region remaining covered by material of the first layer, and progressively removing an outermost surface of the first layer to produce a planarised surface including the stop layer on the upper surface of the protruding region and an outer surface of the first layer.. . ... Infineon Technologies Ag

03/22/18 / #20180082848

Electronic device, electronic module and methods for fabricating the same

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises nisi.. ... Infineon Technologies Ag

03/22/18 / #20180080957

Configuration of integrated current flow sensor

This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low impedance connection may be on the order of milliohms. ... Infineon Technologies Ag

03/22/18 / #20180078136

Device comprising an overlay mechanism, system with devices each comprising an overlay mechanism with an individually programmable delay or method for overlaying data

A device includes an overlay mechanism, system with devices each including an overlay mechanism with an individually programmable delay or method for overlaying data. A method for overlaying data includes redirecting an access which is directed to a first memory location to a second memory location. ... Infineon Technologies Ag

03/15/18 / #20180076747

Gate-driver circuit with improved common-mode transient immunity

Techniques are described for providing, in a gate driver circuit, a compensation current to compensate for parasitic displacement current induced during the rising edge of an output voltage at an output gate of the gate driver circuit. In one example, the techniques of the disclosure include activating, by a bridge driver circuit for a direct-current (dc) motor, a driver of the bridge driver circuit and measuring, by the bridge driver circuit, a parasitic current of the driver during a rise time of an output gate voltage of the driver. ... Infineon Technologies Ag

03/15/18 / #20180076321

Metallization layers for semiconductor devices and methods of forming thereof

A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. ... Infineon Technologies Ag

03/15/18 / #20180076309

Power semiconductor device with dv/dt controllability

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. ... Infineon Technologies Ag

03/15/18 / #20180076036

Self aligned silicon carbide contact formation using protective layer

A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped silicon-carbide contact region at the main surface. ... Infineon Technologies Ag

03/15/18 / #20180074173

System and method for radar

In accordance with an embodiment, a method of operating a radar system includes receiving radar configuration data from a host, and receiving a start command from the host after receiving the radar configuration data. The radar configuration data includes chirp parameters and frame sequence settings. ... Infineon Technologies Ag

03/08/18 / #20180070417

Driving several light sources

According to an example, a device is provided for driving several light sources, wherein the device is arranged to sense a supply signal and apply a phase shift to a switching signal of at least one of the several light sources based on the sensed supply signal. Also, accordingly a method, a lighting device, a computer program product and a computer-readable medium are suggested.. ... Infineon Technologies Ag

03/08/18 / #20180068982

Method of forming a chip assembly and chip assembly

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; the method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and a rear side interconnect material disposed over the rear side metallization, wherein the rear side interconnect material faces the carrier; evaporating the die attach liquid; and after the evaporating the die attach liquid, fixing the plurality of chips to the carrier.. . ... Infineon Technologies Ag

03/08/18 / #20180068975

Semiconductor devices and method for forming semiconductor devices

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.. ... Infineon Technologies Ag

03/08/18 / #20180067153

Method for processing a single-edge nibble transmission signal, data receiving device and data transmission device

In various embodiments, a method for processing a single-edge nibble transmission signal is provided. The method includes determining of at least one drop in a signal level of the time-variable single-edge nibble transmission signal and at least one next rise in the signal level after the drop in the signal level, determining a time interval between the drop and the next rise in the signal level, and determining a quality of the single-edge nibble transmission signal by using the time interval.. ... Infineon Technologies Ag

03/08/18 / #20180066929

Device, a tire pressure measurement system, a tire, a vehicle, a method and a computer program for determining information indicating a length of a footprint of a tire

Embodiments provide a device, a tire pressure measurement system, a tire, a vehicle, a method and a computer program for determining information indicating a length of a footprint of the tire. The device for determining information indicating a length of a footprint of a tire includes an input for a signal from a magnetic earth field sensor configured to generate the signal indicating a measured magnetic earth field. ... Infineon Technologies Ag

03/08/18 / #20180065428

Fail safe device, a tire pressure measurement system, a vehicle, a method for monitoring, and a computer program

Embodiments provide a fail-safe device, a tire pressure measurement system, a vehicle, a tire, a method and a computer program for monitoring a first sensor of a tire pressure monitoring system. The fail-safe device includes a first input for a first signal from the first sensor. ... Infineon Technologies Ag

03/01/18 / #20180063644

Digital silicon microphone with configurable sensitivity, frequency response and noise transfer function

. . In some embodiments, a microphone system includes a multi-bit delta-sigma modulator configured to be coupled to a microphone and configured to covert an output of the microphone into a first digital signal with a multi-bit resolution at a first output of the multi-bit delta-sigma modulator. The microphone system also includes a digital noise shaper coupled to the first output of the multi-bit delta-sigma modulator, and configured to convert a multi-bit digital input of the digital noise shaper into a one-bit digital signal.. ... Infineon Technologies Ag

03/01/18 / #20180063425

Method for generating a high-resolution depth image and an apparatus for generating a high-resolution depth image

A method for generating a high-resolution depth image includes providing at least a first low-resolution raw image. Furthermore, the method includes providing at least one high-resolution raw image. ... Infineon Technologies Ag

03/01/18 / #20180062768

Integrated rf circuit with phase-noise test capability technical field

An integrated circuit is described herein. According to one or more embodiments, the integrated circuit includes a local oscillator with a voltage-controlled oscillator (vco) that generates a local oscillator signal. ... Infineon Technologies Ag

03/01/18 / #20180062662

Phase-locked loop

Phase-locked loop devices are provided where a correction factor is determined based on a correlation using a linear controller.. . ... Infineon Technologies Ag

03/01/18 / #20180062657

Level shifter and method for operating the same

In various embodiments, a level shifter is provide. The level shifter includes a low supply voltage terminal, a high supply voltage terminal, at least one input terminal, at least one output terminal, and a latch. ... Infineon Technologies Ag

03/01/18 / #20180061971

Transistor device with high current robustness

A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure, and a gate electrode. The boost structure is arranged between the field-stop region and the second emitter region. ... Infineon Technologies Ag

03/01/18 / #20180061962

Method for producing a doped semiconductor layer

A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.. . ... Infineon Technologies Ag

03/01/18 / #20180061742

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. ... Infineon Technologies Ag

03/01/18 / #20180061695

Method for processing a wafer and method for processing a carrier

According to various embodiments, a method for processing a wafer may include scanning a focused laser beam over the wafer to form a defect structure within the wafer, the defect structure defining a first region of the wafer located at a first side of the defect structure and a second region of the wafer located at a second side of the defect structure opposite the first side, and an edge region laterally surrounding the defect structure and extending from a first surface of the wafer to a second surface of the wafer opposite the first surface. A surface area of the first region is greater than a surface area of the edge region, and the second region is connected to the first region by the edge region. ... Infineon Technologies Ag

03/01/18 / #20180061671

Semiconductor device with plated lead frame

A semiconductor device includes an insulating carrier structure comprised of an insulating inorganic material. The carrier structure has a receptacle in which a semiconductor chip is disposed. ... Infineon Technologies Ag

03/01/18 / #20180061666

Method for producing a metal-ceramic substrate with at least one via

A method for producing a metal-ceramic substrate with at least one electrically conductive via, in which one metal layer, respectively, is attached in a planar manner to a ceramic plate or a ceramic layer to each of two opposing surface sides of the ceramic layer is provided. The method includes introducing a metal-containing, powdery and/or liquid substance into a hole in the ceramic layer delimiting the via prior to the attachment of both metal layers, or subsequent to the attachment of one of the two metal layers to form an assembly. ... Infineon Technologies Ag

03/01/18 / #20180061660

Barrier layer formation using thermal processing

A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. ... Infineon Technologies Ag

03/01/18 / #20180061644

Methods for forming a semiconductor device and semiconductor devices

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. ... Infineon Technologies Ag

03/01/18 / #20180061206

Sensor devices

Sensor devices and corresponding methods are provided where a quantity is measured and monitored over time. The quantity may be related to a lifetime of the sensor device.. ... Infineon Technologies Ag

03/01/18 / #20180059708

System and method for supply current shaping

According to an embodiment, a device includes a power supply terminal configured to provide a power supply signal to a plurality of functional components and a power supply shaping circuit coupled to the power supply terminal. The power supply shaping circuit is configured to determine a variation signal of the power supply signal and shape changes in the power supply signal by controlling a dummy load coupled to the power supply terminal based on the variation signal.. ... Infineon Technologies Ag

03/01/18 / #20180059216

Receive chain configuration for concurrent multi-mode radar operation

A frequency-modulated continuous-wave (fmcw) radar sensor may include a receive chain, where the receive chain includes a plurality of elements associated with processing a radar signal, where at least one element, of the plurality of elements, is configurable independent of at least one other element of the plurality of elements.. . ... Infineon Technologies Ag

03/01/18 / #20180059166

Test circuit for stress leakage measurements

In accordance with an embodiment, a circuit includes: a gate drive circuit; an output transistor, and a gate coupled to the gate drive circuit; a normally-on transistor including a load path coupled to the gate drive circuit and to the gate of the output transistor; and a pull-up device, where the output transistor is configured to provide a test leakage current in a test mode when a measurement voltage is applied to a current test node coupled to the gate of the output transistor and a turn-off voltage is applied to the gate of the normally-on transistor; and the gate drive circuit is configured to provide a gate drive voltage to the gate of the output transistor in a nominal operation mode when a voltage of the gate of the normally-on transistor is pulled-up to a voltage of the pull-up node via the pull-up device.. . ... Infineon Technologies Ag

03/01/18 / #20180059066

Gas analyzer

A gas analyzer is provided. The gas analyzer may include: a tubular housing having a housing wall extending along an axial direction of the tubular housing and surrounding a gas chamber configured to receive a gas to be analyzed therein, an excitation element positioned at a first axial end of the tubular housing and configured to selectively excite gas molecules of a specific type that is to be detected in the gas received in the gas chamber in a time-varying fashion, thereby generating acoustic waves, and a sensor positioned at a second axial end of the tubular housing and configured to detect acoustic waves generated by the excitation element.. ... Infineon Technologies Ag

02/22/18 / #20180054200

Differential logic with low voltage supply

In accordance with an embodiment, a method includes receiving a first differential logic signal using a first branch of a circuit that extends from a voltage supply of the circuit as far as an earth terminal of the circuit and has at least one first differential transistor pair, receiving a second differential logic signal using a second branch of the circuit that extends from the voltage supply to the earth terminal and has at least one second differential transistor pair, conducting a current flow between the first branch and the second branch, and outputting an output signal by the second branch.. . ... Infineon Technologies Ag

02/22/18 / #20180053841

Semiconductor device with a source trench electrode

A semiconductor device includes a body region arranged between source and drift regions in a semiconductor body. A gate trench extends from a first surface of the semiconductor body, through the source and body regions and into the drift region. ... Infineon Technologies Ag

02/22/18 / #20180053822

Soi island in a power semiconductor device

A power semiconductor device includes a semiconductor-on-insulator island having a semiconductor region and an insulation structure, the insulation structure being formed by an oxide and separating the semiconductor region from a portion of a semiconductor body of the power semiconductor device. The insulation structure includes a sidewall that laterally confines the semiconductor region; a bottom that vertically confines the semiconductor region; and a local deepening that forms at least a part of a transition between the sidewall and the bottom, wherein the local deepening extends further along the extension direction as compared to the bottom.. ... Infineon Technologies Ag

02/22/18 / #20180053663

Semiconductor component, method for processing a substrate and method for producing a semiconductor component

In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. ... Infineon Technologies Ag

02/22/18 / #20180052626

Memory having different reliabilities

The disclosure proposes a circuit including a memory which has a multiplicity of memory cells, the memory having a first area and a second area, at least one memory cell comprising a part of the first area and a part of the second area, the first area having a lower reliability than the second area, and the circuit being set up in such a manner that first bits are stored in the first area and second bits are stored in the second area. A circuit for reading the memory and methods for writing to and reading the memory are also disclosed.. ... Infineon Technologies Ag

02/22/18 / #20180052479

Integrated circuit with an amplifier mosfet

In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier mosfet, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier mosfet.. . ... Infineon Technologies Ag

02/22/18 / #20180052209

Sensor arrangement having thermo-emf compensation

Sensor arrangement providing a signal responsive to a temperature difference between a hall-effect device output contact and a reference point, having first contact tub located near an external surface of a hall effect region; second contact tub located near the reference point; first conductor element comprising first and second end portions, the first end portion thermally coupled to the first contact tub and the second end portion thermally coupled to the second contact tub; second conductor element comprising third and fourth end portions, the third end portion thermally coupled to the first contact tub; third conductor element comprising fifth and sixth end portions, the fifth end portion thermally coupled to the second contact tub, wherein the first and third end portions are electrically coupled, the second and fifth end portions are electrically coupled, at least two of first, second, and third conductor elements have substantially different seebeck coefficients, and the signal is tapped at the fourth and sixth end portions.. . ... Infineon Technologies Ag

02/22/18 / #20180052042

Acoustic wave sensor

An acoustic wave sensor may include: a continuous membrane deflectable by acoustic waves to be detected, and a piezoelectric layer provided on the membrane and including a plurality of piezoelectric layer portions respectively equipped with at least two individual electric contact structures configured to electrically connect the respective piezoelectric layer portions. Electric contact structures associated with different piezoelectric layer portions may be separated from each other.. ... Infineon Technologies Ag

02/15/18 / #20180047893

Hall effect device

A hall effect device includes an active hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active hall region or extends in the active hall region; and wherein the sense contact elements are arranged in the active hall region and neighboring to the switchable supply contact elements.. . ... Infineon Technologies Ag

02/15/18 / #20180047815

Metallization and its use in, in particular, an igbt or a diode

A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink. ... Infineon Technologies Ag

02/15/18 / #20180047619

Method of manufacturing a template wafer

A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.. ... Infineon Technologies Ag

02/15/18 / #20180047458

Non-volatile memory testing

Devices, systems and methods are provided which comprise testing of a non-volatile memory concurrently during at least a part of a testing of other system parts by a processor (11).. . ... Infineon Technologies Ag

02/15/18 / #20180045810

Method and device for processing radar signals

A method is suggested for processing radar signals in a processing stage, the method comprising: (i) determining fft results at a first precision, and (ii) storing a first group of the fft results at a second precision, wherein the second precision is lower than the first precision. Also, a device and a computer program are provided accordingly.. ... Infineon Technologies Ag

02/08/18 / #20180041241

Radio frequency system and method for wearable device

A radio frequency (rf) system includes an rf integrated circuit (ic) die. The rf ic die includes a first transmit circuit, a second transmit circuit, a first receive circuit, a second receive circuit, and a control circuit coupled to the first transmit circuit, the second transmit circuit, the first receive circuit, and the second receive circuit. ... Infineon Technologies Ag

02/08/18 / #20180041150

Detecting brushfire in power systems

In some examples, a detection circuit is configured to detect a brushfire in a power system based on an electrical signal from the power system. The detection circuit is further configured to set a bit in response to detecting the brushfire.. ... Infineon Technologies Ag

02/08/18 / #20180040926

Indirect battery pressure measurement

Embodiments described herein relate to a battery cells and methods for measuring internal pressure in a battery cell. According to one embodiment, a battery cell includes an interior space, in which a battery electrolyte resides, and a housing that gas-tightly encloses the interior space. ... Infineon Technologies Ag

02/08/18 / #20180040691

Semiconductor devices with steep junctions and methods of manufacturing thereof

Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. ... Infineon Technologies Ag

02/08/18 / #20180040573

Chip carrier and method thereof

A method may include providing a chip carrier having a chip supporting region to support a chip, and a chip contacting region having at least one contact pad, the chip carrier being thinner in the chip contacting region such that a first thickness of the chip carrier at the at least one contact pad is smaller than a second thickness of the chip carrier in the chip supporting region. A disposing of the chip, having at least one contact protrusion, over the chip carrier, such that the at least one contact protrusion is arranged over the at least one contact pad may be included. ... Infineon Technologies Ag

02/08/18 / #20180040537

Package with partially encapsulated cooling channel for cooling an encapsulated chip

A power module which comprises a semiconductor chip, at least one cooling plate with at least one cooling channel thermally coupled to the semiconductor chip and being configured so that a coolant is guidable through the at least one cooling channel, and an encapsulant encapsulating at least part of the semiconductor chip and part of the at least one cooling channel, wherein at least part of a main surface of the cooling plate forms part of an external surface of the power module.. . ... Infineon Technologies Ag

02/08/18 / #20180040530

Die attach methods and semiconductor devices manufactured based on such methods

A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. ... Infineon Technologies Ag

02/08/18 / #20180040504

Devices with backside metal structures and methods of formation thereof

A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. ... Infineon Technologies Ag

02/08/18 / #20180039508

Safety hypervisor function

The disclosure relates to systems and methods for defining a processor safety privilege level for controlling a distributed memory access protection system. More specifically, a safety hypervisor function for accessing a bus in a computer processing system includes a module, such as a computer processing unit (cpu) or a direct memory access (dma) for accessing a system memory and a memory unit for storing a safety code, such as a processor status word (psw) or a configuration register (dma (reg)). ... Infineon Technologies Ag

02/08/18 / #20180038915

Battery monitoring using a redundant neighbor measurement

In one example, a circuit includes a first integrated circuit and a second integrated circuit. The first integrated circuit is configured to detect a first battery voltage that is associated with a first battery cell and output a representation of the first battery voltage. ... Infineon Technologies Ag

02/08/18 / #20180036755

Liquid-dispensing system, apparatus and method

A liquid-dispensing system includes at least one nozzle configured to dispense a liquid. The liquid-dispensing system includes at least one sensor module, configured to provide a sensor signal comprising information related to whether liquid is dispensed by the at least one nozzle. ... Infineon Technologies Ag

02/01/18 / #20180035206

System and method for a pumping speaker

According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the first frequency is outside an audible frequency range and the second frequency is inside the audible frequency range. ... Infineon Technologies Ag

02/01/18 / #20180034457

Increase robustness of devices to overvoltage transients

In one example, a method includes selectively activating, by control logic and based on a control signal, a switch; in response to determining that an electrical characteristic of a signal provided to the switch satisfies a threshold while the switch is deactivated, activating, by the control logic and regardless of the control signal, the switch until determining that a potential of the signal provided to the switch satisfies a threshold potential; and in response to determining that the potential of the signal provided to the switch satisfies the threshold potential, deactivating the switch.. . ... Infineon Technologies Ag

02/01/18 / #20180033783

Avalanche diode having an enhanced defect concentration level and method of making the same

The invention relates to an avalanche diode that can be employed as an esd protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. ... Infineon Technologies Ag

02/01/18 / #20180033752

Molded semiconductor package having an optical inspection feature

A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. ... Infineon Technologies Ag

02/01/18 / #20180033723

Capacitors with barrier dielectric layers, and methods of formation thereof

A device including a first metal feature is disposed in a first insulating layer. A second metal feature is disposed in a second insulating layer and separated from the first metal feature by a portion of a first etch stop liner disposed between the first and the second insulating layers. ... Infineon Technologies Ag

02/01/18 / #20180033711

Double-encapsulated power semiconductor module and method for producing the same

One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. ... Infineon Technologies Ag

02/01/18 / #20180033705

Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device

A semiconductor device includes a first source wiring substructure connected to a plurality of source doping region portions of a transistor structure, and a second source wiring substructure connected to a plurality of source field electrodes located in a plurality of source field trenches extending into a semiconductor substrate. A contact wiring portion of the first source wiring substructure and a contact wiring portion of the second source wiring substructure are located in a wiring layer of a layer stack located on the semiconductor substrate. ... Infineon Technologies Ag

02/01/18 / #20180033665

Wafer box, method for arranging wafers in a wafer box, wafer protection plate and method for protecting a wafer

Various embodiments provide a wafer box. The wafer box may include a housing with a receiving space for receiving at least one wafer arranged above a housing base, at least one fixing structure which is connected to the housing base and which extends from the housing base, and at least one fixing device which is fastenable to the at least one fixing structure at a variable distance from the housing base. ... Infineon Technologies Ag

02/01/18 / #20180033662

Wafer box, wafer stacking aid, wafer carrier, wafer transport system, method for loading a wafer box with wafers and method for removing wafers from a wafer box

In various embodiments, a wafer box is provided. The wafer box may include a housing with a receiving space for receiving a stack comprising a plurality of wafers, each arranged above a housing base. ... Infineon Technologies Ag

02/01/18 / #20180032854

Chip card module, chip card, chip card arrangement, method of forming a chip card module, and method of forming a chip card

A chip card module is provided. The chip card module may include a carrier having a first side and an opposite second side, a chip arranged over the carrier, the chip having a first chip contact, a first and a second antenna contact formed over the first side, a metal-free area formed over the first side between the first antenna contact and the second antenna contact, wherein the metal-free area extends between a first edge portion and a second edge portion of the carrier, and a first chip connection electrically connecting the first chip contact to the first antenna contact, wherein the first chip connection is at least partially arranged over the second side in a region opposite the metal-free area.. ... Infineon Technologies Ag

02/01/18 / #20180031644

Hall sensor devices and methods for operating the same

A hall sensor device includes a hall effect region of a first conductivity type, electrical contact regions configured to provide electrical signals to/from the hall effect region, and circuitry. Each electrical contact region is formed in a respective well of a second conductivity type that adjoins the hall effect region. ... Infineon Technologies Ag

02/01/18 / #20180031610

Measurement apparatus

Measurement apparatuses and methods are described. A measurement input is coupled with a first terminal of a capacitance via a first switch, and a reference voltage is coupled with the first terminal of the capacitance via a second switch. ... Infineon Technologies Ag

02/01/18 / #20180029878

Microelectromechanical device, a microelectromechanical system, and a method of manufacturing a microelectromechanical device

A microelectromechanical device, a microelectromechanical system, and a method of manufacturing a microelectromechanical device, wherein the microelectromechanical device may include: a substrate; a diaphragm mounted to the substrate; a first electrode mounted to the diaphragm; a second electrode mounted to the substrate; wherein the first electrode is laterally adjacent to the second electrode; and wherein the diaphragm is arranged over a gap between the first electrode and the second electrode.. . ... Infineon Technologies Ag

01/25/18 / #20180027655

Mounting of components on a printed circuit board

A method for mounting components on a printed circuit board comprising the following steps: arranging a first component on a first surface of the printed circuit board and a second component on a second surface of the printed circuit board, wherein the first component occupies a laterally overlapping position with the second component; and applying a first force to the first component for mounting it on the printed circuit board and/or applying a second force to the second component for mounting it on the printed circuit board. Further, a printed circuit board is suggested.. ... Infineon Technologies Ag

01/25/18 / #20180026548

System and method for a power inverter with controllable clamps

A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing path, the second voltage swing path including a second plurality of power transistors, the second voltage swing path producing portions of a negative half-wave of the output signal when active; a first clamping component coupled to the first voltage swing path, the first clamping component forming a freewheeling path for the first voltage swing path, the first clamping component comprising a control terminal, the first clamping component having a first stored charge when the control terminal is in a first state and a second stored charge when the control terminal is in a second state, the first stored charge being greater than the second stored charge; and a second clamping component coupled to the second voltage swing path, the second clamping component forming a freewheeling path for the second voltage swing path, the second clamping component comprising a control terminal, the second clamping component having the first stored charge when the control terminal is in the first state and the second stored charge when the control terminal is in the second state.. . ... Infineon Technologies Ag

01/25/18 / #20180026377

Radio frequency system for wearable device

A radio frequency (rf) system includes an rf integrated circuit (ic) die, and an antenna coupled to the rf ic die. The rf system further includes a reflector layer over the rf ic die, the reflector layer extending over at least a portion of the antenna, a combination of the antenna and the reflector layer having a radiation pattern that comprises a main lobe in a first direction parallel to a top surface of the reflector layer.. ... Infineon Technologies Ag

01/25/18 / #20180026133

Semiconductor device including a transistor array and a termination region and method of manufacturing such a semiconductor device

A semiconductor device in a semiconductor substrate having a first main surface includes a transistor array and a termination region. The transistor array includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. ... Infineon Technologies Ag

01/25/18 / #20180025192

Electronic identification document

An electronic identification document is provided. The electronic identification document may include a carrier, an identification element, a microwave interaction structure configured to interact with microwave radiation, and an alteration element, wherein the alteration element may be part of or in contact with the microwave interaction structure and may be configured to alter, upon interaction of the interaction structure with microwaves, its state from an initial state to a permanent altered state, wherein the permanent altered state may differ from the initial state by a change of the alteration element in color, brightness, saturation, and/or transparency.. ... Infineon Technologies Ag

01/25/18 / #20180023977

Single or multiple axis magnetic sensor for relative phase measurement of wheel rotation in tpms application

Embodiments may provide a system, a wheel localizer, a wheel localization device, or methods for locating a position of at least one wheel out of a plurality of wheels of a vehicle. In one embodiment, a system comprises a detector that obtains information related to a reference magnetic field in which the at least one wheel rotates, an antilock braking system (abs) unit that obtains information related to angular rotations of the plurality of wheels, and a locator that determines the position of the at least one wheel based, at least in part, on the information related to the reference magnetic field and the information related to the angular rotations of plurality of wheels, where the position comprises a wheel location from among the plurality of wheels. ... Infineon Technologies Ag

01/25/18 / #20180022601

Method for producing a semiconductor module

The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels into a plurality of semiconductor modules.. . ... Infineon Technologies Ag

01/25/18 / #20180021919

Apparatus for controlling a movement of a grinding wheel, semiconductor wafer grinding system and method for forming semiconductor devices

An apparatus for controlling a movement of a grinding wheel of a semiconductor wafer grinding system includes: an interface to obtain a feedback signal including grinding force information indicating a force applied to a semiconductor wafer by the grinding wheel; and a control module to generate a control signal for controlling the movement of the grinding wheel based on the grinding force information. The control module generates the control signal to trigger a forward movement of the grinding wheel according to a desired velocity profile during the grinding, if the grinding force information indicates that a force applied by the grinding wheel is below a force threshold. ... Infineon Technologies Ag

01/25/18 / #20180020720

Electronic cigarette, liquid container, and method of operating an electronic cigarette

According to various embodiments, an electronic cigarette may be provided including a heater configured to vaporize a liquid; a mouth piece to deliver the vaporized liquid to a user of the electronic cigarette; a processor configured to control the heater to vaporize the liquid; a wireless communication circuit configured to communicate with an external communication device; and a verification circuit configured to start the operation of the electronic cigarette upon receipt of a signal transmitted by the external communication device via the wireless communication circuit.. . ... Infineon Technologies Ag

01/18/18 / #20180019319

N-channel bipolar power semiconductor device with p-layer in the drift volume

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion of the semiconductor body; a trench of a first trench type extending in the semiconductor body along an extension direction and being arranged adjacent to the semiconductor channel region, the trench of the first trench type including a control electrode that is insulated from the semiconductor body. ... Infineon Technologies Ag

01/18/18 / #20180019306

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.. ... Infineon Technologies Ag

01/18/18 / #20180019304

Semiconductor device including a super junction structure in a sic semiconductor body

An embodiment of a semiconductor device includes a body region of a first conductivity type in a sic semiconductor body of a second conductivity type. A super junction structure is in the sic semiconductor body, and includes a drift zone section being of the second conductivity type and a compensation structure of the first conductivity type. ... Infineon Technologies Ag

01/18/18 / #20180019218

Method for processing an electronic component and an electronic component

According to various embodiments an electronic component includes: at least one electrically conductive contact region; a contact pad including a self-segregating composition disposed over the at least one electrically conductive contact region; a segregation suppression structure disposed between the contact pad and the at least one electrically conductive contact region, wherein the segregation suppression structure includes more nucleation inducing topography features than the at least one electrically conductive contact region for perturbing a chemical segregation of the self-segregating composition by crystallographic interfaces of the contact pad defined by the nucleation inducing topography features.. . ... Infineon Technologies Ag

01/18/18 / #20180019150

Method for processing one semiconductor wafer or a plurality of semiconductor wafers and protective cover for covering the semiconductor wafer

In various embodiments, a method for processing a semiconductor wafer is provided. The semiconductor wafer includes a first main processing side and a second main processing side, which is arranged opposite the first main processing side, and at least one circuit region having at least one electronic circuit on the first main processing side. ... Infineon Technologies Ag

01/18/18 / #20180019127

Method for processing a wafer, and layer stack

In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer and than the useful layer. ... Infineon Technologies Ag

01/18/18 / #20180019019

Magnetic memory device and method for operating the same

A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. ... Infineon Technologies Ag

01/18/18 / #20180018208

Diverse integrated processing using processors and diverse firmware

Fault detection devices, systems and methods are provided which implement identical processors. A first processor is configured to receive a first measurement, execute a first firmware based on the first measurement, and output a first result of the executed first firmware. ... Infineon Technologies Ag

01/18/18 / #20180017636

Vertical hall sensor circuit comprising stress compensation circuit

A vertical hall sensor circuit comprises an arrangement comprising a vertical hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a hall effect-related electrical characteristic. The vertical hall sensor circuit further comprises a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement. ... Infineon Technologies Ag

01/18/18 / #20180017607

Supply self adjustment for systems and methods having a current interface

A sensor system having a current interface includes a supply and current interface, an electronic control unit and an enhanced initialization sensor. The supply and current interface is configured to receive a supply voltage. ... Infineon Technologies Ag

01/18/18 / #20180016132

Layer structure and method of manufacturing a layer structure

A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. ... Infineon Technologies Ag

01/11/18 / #20180014124

Sensor arrangement having an optimized group delay and signal processing method

In various embodiments, a circuit arrangement is provided. The circuit arrangement includes a sensor set up to provide an analogue signal, an analogue/digital converter set up to receive the analogue signal and to provide a first signal, and a first filter set up to receive a signal based on the first signal and to provide a second signal. ... Infineon Technologies Ag

01/11/18 / #20180013342

Digital controller for switched capacitor dc-dc converter

Representative implementations of devices and techniques may minimize switching losses and voltage ripple in a switched capacitor de-de converter. A digital controller is used to control switching, based on an existing load. ... Infineon Technologies Ag

01/11/18 / #20180013340

Determination of entering and exiting safe mode

The disclosure describes examples of integrate circuit (ic) chips. An ic chip includes a first detector configured to generate information indicative of whether an input supply voltage or power is greater than or equal to a first threshold, a second detector configured to receive a circuit voltage or current level and generate information used to indicate a status of the ic chip based on the received circuit voltage or current level, and a controller configured to cause the ic chip to enter a safe mode in response to both the first detector indicating that the input supply voltage or power is greater than the first threshold and the circuit voltage or current level being greater than a second threshold.. ... Infineon Technologies Ag

01/11/18 / #20180013188

Apparatuses and methods for signal coupling

Coupling apparatuses, circuits having such coupling apparatuses and corresponding methods are provided that involve a first and a second signal being coupled out from an out-coupling circuit part and being separately coupled into first and second circuit pmts. The use of different coupling mechanisms effects signal separation in this case. ... Infineon Technologies Ag

01/11/18 / #20180013013

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. ... Infineon Technologies Ag

01/11/18 / #20180012854

Enhanced solder pad

A solder pad includes a surface. A tin layer is arranged on the surface. ... Infineon Technologies Ag

01/11/18 / #20180012848

Crack stop barrier and method of manufacturing thereof

A semiconductor device includes a chip, a first kerf adjacent the chip and having a first main direction, a second kerf adjacent the chip and having a second main direction. A kerf junction is formed by the first kerf and the second kerf. ... Infineon Technologies Ag

01/11/18 / #20180012836

Nanotube structure based metal damascene process

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of material arranged over the first layer of material, wherein the structured layer of catalyst material having a first set of regions including the catalyst material over the substrate and a second set of regions free of the catalyst material over the substrate, and forming a plurality of groups of nanotubes over the substrate, each group of the plurality of groups of nanotubes includes a plurality of nanotubes formed over a respective region in the first set of regions.. . ... Infineon Technologies Ag

01/11/18 / #20180012819

Semiconductor devices and methods of formation thereof

In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. ... Infineon Technologies Ag

01/11/18 / #20180012764

Bipolar transistor device with an emitter having two types of emitter regions

Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recombination region is located at least in the first type emitter regions and the third type emitter regions.. . ... Infineon Technologies Ag

01/11/18 / #20180011776

Lightweight trace based measurement systems and methods

An automotive electronics system includes an electronic control unit and a trace adapter. The electronic control unit is configured to receive measurement signals and provide control signals. ... Infineon Technologies Ag

01/11/18 / #20180011181

Radar systems and methods thereof

A radar system includes a radar transceiver device, which includes a transmitter front end circuit for transmitting a chirp signal towards an object. The radar transceiver device includes a receiver front end circuit for receiving the reflected chirp signal from the object. ... Infineon Technologies Ag

01/04/18 / #20180007649

Signal detector device and method

A signal detector device and method includes a quadrature demodulator configured to receive an input signal, a first reference signal, and a second reference signal in quadrature with the first reference signal, the quadrature demodulator further configured to produce a plurality of output signals from the input signal and the first and the second reference signal, the plurality of output signals indicating the amplitude and phase of the input signal, and one or more inverting circuits, the inverting circuits having a first and a second programmable output polarity, the plurality of output signals being output by the quadrature demodulator when the inverting circuits are set to the first programmable output polarity, the plurality of output signals being inverted and output by the quadrature demodulator when the inverting circuits are set to the second programmable output polarity. . ... Infineon Technologies Ag

01/04/18 / #20180006639

Electronic switching and reverse polarity protection circuit

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. ... Infineon Technologies Ag

01/04/18 / #20180006473

Ensuring backward compatibility in battery authentication applications

A system and method to identify whether a removable battery pack inserted into a battery-powered device is an authorized battery pack for the device. Battery-powered devices may include a battery-powered drill, saw, flashlight or other type of device. ... Infineon Technologies Ag

01/04/18 / #20180006448

Central combined active esd clamp

An electrostatic discharge clamp for groups of terminals having cascaded and different voltage classes, a plurality of discharge paths, and a multiple-input trigger circuit. In response to detecting a positive voltage event at any of the groups of terminals, the trigger circuitry can turn on an electronic switch causing current caused by the voltage event to flow through one or more of the discharge paths instead of through functional circuitry which could potentially be damaged by the current caused by the voltage event.. ... Infineon Technologies Ag

01/04/18 / #20180006352

Differential directional coupler, signal conversion system and method for converting a differential input signal

In accordance with an embodiment, a differential directional coupler includes a first coupler having a first transformer comprising a first input coil and a first output coil, and a second coupler having a second transformer comprising a second input coil and a second output coil. The first input coil and the second input coil each include an input port, the first transformer at least partially covers the second transformer in a top view from a vertical direction onto the differential directional coupler, and the first input coil and the second input coil are configured to be mirror symmetric with respect to one another in the top view with respect to their input ports.. ... Infineon Technologies Ag

01/04/18 / #20180006115

Power semiconductor device having fully depleted channel region

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, first and second cells electrically connected to the first load terminal structure and to a drift region, the drift region having a first conductivity type; a first mesa in the first cell and including: a port region electrically connected to the first load terminal structure, and a channel region coupled to the drift region; a second mesa in the second cell and including: a port region of the opposite conductivity type and electrically connected to the first load terminal structure, and a channel region coupled to the drift region. Each mesa is spatially confined, in a direction perpendicular to a direction of the load current within the respective mesa, by an insulation structure. ... Infineon Technologies Ag

01/04/18 / #20180006110

Power semiconductor device having fully depleted channel regions

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a drift region. ... Infineon Technologies Ag

01/04/18 / #20180006109

Power semiconductor device having fully depleted channel regions

A power semiconductor device is disclosed. The device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure, a first cell and a second cell. ... Infineon Technologies Ag

01/04/18 / #20180006029

Power semiconductor device having fully depleted channel regions

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, and first and second cells each configured for controlling a load current and electrically connected to the first load terminal structure and to a drift region. A first mesa in the first cell includes a port region electrically connected to the first load terminal structure, and a first channel region coupled to the drift region. ... Infineon Technologies Ag

01/04/18 / #20180006027

Power semiconductor device having fully depleted channel regions

A power semiconductor device is disclosed. In one example, the device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure. ... Infineon Technologies Ag

01/04/18 / #20180005838

Segmented edge protection shield

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. ... Infineon Technologies Ag

01/04/18 / #20180005831

Method of reducing an impurity concentration in a semiconductor body

A method includes kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body, reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body, and annealing the semiconductor body in a first annealing process at a temperature of between 300° c. And 450° c. ... Infineon Technologies Ag

01/04/18 / #20180005830

Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

By directing an ion beam with a beam divergence θ on a process surface of a semiconductor substrate, parallel electrode trenches are formed in the semiconductor substrate. A center axis of the directed ion beam is tilted to a normal to the process surface at a tilt angle α, wherein at least one of the tilt angle α and the beam divergence θ is not equal to zero. ... Infineon Technologies Ag

01/04/18 / #20180003780

Apparatus and method using a plurality of magnetic field sensitive devices

An apparatus for magnetic field detection comprises a plurality of magnetic field sensitive devices comprising at least a first magnetic field sensitive device, a second magnetic field sensitive device and a third magnetic field sensitive device. The apparatus comprises a power source configured to provide a first supply current through the first magnetic field sensitive device and a second supply current independent of the first supply current through the second magnetic field sensitive device. ... Infineon Technologies Ag

01/04/18 / #20180003754

Device, system and method for automatic test of integrated antennas

A test set-up for testing a system-in package with an integrated antenna is described herein. According to one exemplary embodiment, the test set-up includes a carrier with an rf probe arranged thereon and a test socket with resilient electric contacts. ... Infineon Technologies Ag

01/04/18 / #20180003522

Magnetic sensor devices and methods for determining a rotation direction of a magnetic component about a rotation axis

A magnetic sensor device for determining a rotation direction of a magnetic component about a rotation axis is provided. The magnetic sensor device includes a bridge circuit with a first half-bridge and a second half-bridge. ... Infineon Technologies Ag

01/04/18 / #20180003503

Damping of a sensor

A device comprises a substrate, a spring structure, and a first sensor. The first sensor is resiliently coupled with the substrate via the spring structure. ... Infineon Technologies Ag

01/04/18 / #20180002826

Method of manufacturing cz silicon wafers, and method of manufacturing a semiconductor device

In accordance with a method of manufacturing cz silicon wafers, a parameter of at least two of the cz silicon wafers is measured. A group of the cz silicon wafers falling within a tolerance of a target specification is determined. ... Infineon Technologies Ag

01/04/18 / #20180002167

Micromechanical structure and method for manufacturing the same

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 gpa to about 70 gpa.. . ... Infineon Technologies Ag








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