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Infineon Technologies Austria Ag patents


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

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Drive circuit

A drive circuit and a method are disclosed. The drive circuit includes output nodes configured to be coupled to a load, a capacitor coupled between the output nodes, and a power converter. ... Infineon Technologies Austria Ag

Power converter circuit with a main converter and an auxiliary converter

Examples of power converter circuits and power conversion methods are disclosed. One example of a power converter circuit includes an input configured to receive an input voltage and an output configured to provide an output voltage; a main converter coupled between a main converter input and the output and comprising a first winding and a second winding that are inductively coupled; and an auxiliary converter comprising an auxiliary converter input coupled to a third winding and an auxiliary converter output, wherein the third winding is inductively coupled with the first winding and the second winding. ... Infineon Technologies Austria Ag

Transistor device

Transistor devices are provided. A transistor device includes a unipolar transistor coupled between a first terminal and a second terminal; and a bipolar transistor coupled in parallel to the unipolar transistor between the first terminal and the second terminal. ... Infineon Technologies Austria Ag

Power semiconductor device

A power semiconductor device includes: a semiconductor body coupled to a first load terminal and a second load terminal, and includes: a first doped region of a second conductivity type electrically connected to the first load terminal; a recombination zone arranged at least within the first doped region; an emitter region of the second conductivity type electrically connected to the second load terminal; and a drift region of a first conductivity type arranged between the first doped region and the emitter region. The drift region and the first doped region enable the power semiconductor device to operate in: a conducting state during which a load current between the load terminals is conducted along a forward direction; in a forward blocking state during which a forward voltage applied between the load terminals is blocked; and in a reverse blocking state during which a reverse voltage applied between the terminals is blocked.. ... Infineon Technologies Austria Ag

High voltage blocking iii-v semiconductor device

A semiconductor device includes a type iv semiconductor base substrate, a first type iii-v semiconductor layer formed on a first surface of the base substrate, and a second type iii-v semiconductor layer with a different bandgap as the first type iii-v being formed on the first type iii-v semiconductor layer. The semiconductor device further includes first and second electrically conductive device terminals each being formed on the second type iii-v semiconductor layer and each being in ohmic contact with the two-dimensional charge carrier gas. ... Infineon Technologies Austria Ag

Die embedding

A power semiconductor device package includes a power semiconductor die having a first load terminal at a die frontside and a second load terminal at a die backside. The package has a package top side, a package footprint side, and a first terminal interface and a second terminal interface arranged at the package footprint side. ... Infineon Technologies Austria Ag

Switch device

A device is provided that includes a switch within a package. A first electrical connection is provided between a load terminal of the switch and first pin of the package, and a second electrical connection at least partially different from the first electrical connection is provided between the switch and a second pin of the package. ... Infineon Technologies Austria Ag

Method and apparatus for setting control loop parameters of a voltage regulator controller

A method is provided for configuring a controller for a voltage regulator system having an output filter response set by an inductance (l) and a capacitance (c). The method includes applying one or more pulses of known on-time and off-time to the voltage regulator system, and taking measurements of the voltage regulator system in response to the one or more pulses of known on-time and off-time. ... Infineon Technologies Austria Ag

Switched-mode power supply controller using a single pin for both input voltage sensing and control of power supply charging

Circuits and methods within a switched-mode power supply (smps) controller are provided. The smps controller includes an smps power stage which is integrated within the same package, and which has a first power switch. ... Infineon Technologies Austria Ag

Semiconductor device with different gate trenches

A semiconductor device includes a first trench and a second trench in a first main surface of a semiconductor substrate. Each of the first and second trenches includes first sections extending lengthwise in a first direction and a second section extending lengthwise in a second direction transvers to the first direction, the second section of the first trench being disposed opposite to the second section of the second trench. ... Infineon Technologies Austria Ag

Device including a compound semiconductor chip

A device includes a leadframe having a diepad and leads, a compound semiconductor chip arranged over a first surface of the diepad and including gate, source electrode and drain electrodes, and an encapsulation material covering the compound semiconductor chip and diepad. A second surface of the diepad opposite the first surface is exposed from the encapsulation material. ... Infineon Technologies Austria Ag

Control of isolated power converters during transient load conditions

An isolated power converter includes primary side switch devices coupled to secondary side rectifying devices by a transformer and a controller. Responsive to a transient load condition, the controller switches the primary side switch devices at an initial switching period having a positive half cycle and a negative half cycle to transfer energy across the transformer during the positive half cycle and the negative half cycle. ... Infineon Technologies Austria Ag

Voltage and current sensing calibration for switching voltage regulators

A voltage regulator includes a power stage electrically coupled to an input voltage terminal, a controller for controlling the power stage and a shunt resistor of a sense network connected in series between the input voltage terminal and the power stage. In a non-calibration mode, a first level shifting resistor of the sense network is electrically connected in series between a first terminal of the shunt resistor and a first sense pin of the controller and a second level shifting resistor of the sense network is electrically connected in series between a second terminal of the shunt resistor and a second sense pin of the controller. ... Infineon Technologies Austria Ag

Insulation structure including a gas filled cavity

A method and a semiconductor device are disclosed. The method includes forming an etch mask on top of a surface of an edge region of a semiconductor body, the edge region surrounding an inner region of the semiconductor body, the etch mask having a plurality of openings and at least one bridge between the openings. ... Infineon Technologies Austria Ag

08/02/18 / #20180219008

Bidirectional normally-off iii-v devices and circuits

Circuits and devices for bidirectional normally-off switches are described. A circuit for a bidirectional normally-off switch includes a depletion mode transistor and an enhancement mode transistor. ... Infineon Technologies Austria Ag

08/02/18 / #20180218939

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes a semiconductor substrate having a first region and a second region. The semiconductor device also includes an insulating structure laterally between the first region and the second region in the semiconductor substrate. ... Infineon Technologies Austria Ag

07/19/18 / #20180204915

Sloped field plate and contact structures for semiconductor devices and methods of manufacturing thereof

A semiconductor device includes a base layer, a dielectric layer over the base layer, an opening extending through the dielectric layer and to a main surface of the base layer, the opening having a sloped sidewall, and an electrically conductive material over the sloped sidewall. An angle between the sloped sidewall and the main surface of the base layer is in a range between 5 degrees and 50 degrees. ... Infineon Technologies Austria Ag

07/19/18 / #20180204914

Semiconductor device having a transistor and a conductive plate

A semiconductor device includes a transistor. The transistor includes a source region adjacent to a first main surface of a semiconductor substrate, the source region being electrically coupled to a source terminal via a source contact. ... Infineon Technologies Austria Ag

07/12/18 / #20180197852

Method of producing a semiconductor device

A semiconductor body having a drift region layer, a body region layer adjoining the drift region layer, and a source region layer adjoining the body region layer and forming a first surface of the semiconductor body is provided. At least two trenches extend from the first surface of the semiconductor body through the source region layer and the body region layer. ... Infineon Technologies Austria Ag

07/05/18 / #20180190641

Semiconductor device comprising a clamping structure

Semiconductor device is provided with a semiconductor body that includes a clamping structure including a first pn junction diode and a second pn junction diode serially connected back to back between a first contact and a second contact. A breakdown voltage of the first pn junction diode is greater than 100 v, and a breakdown voltage of the second pn junction diode is greater than 10 v.. ... Infineon Technologies Austria Ag

06/28/18 / #20180183343

Llc power converter and switching method thereof

A method includes turning off a high-side switch of an inductor-inductor-capacitor (llc) power converter; detecting a first current pulse at a gate of a low-side switch of the llc power converter after turning off the high-side switch; and turning on the low-side switch of the llc power converter after detecting the first current pulse.. . ... Infineon Technologies Austria Ag

06/28/18 / #20180183228

System and method for desaturation detection

In accordance with an embodiment, a method of operating a control circuit includes generating a threshold value based on a drive signal of an external power transistor, and determining an overpower state of the external power transistor based on a voltage at a drain or a collector of the external power transistor and the threshold value.. . ... Infineon Technologies Austria Ag

06/28/18 / #20180182629

Forming recombination centers in a semiconductor device

Disclosed is a method. The method includes implanting recombination center particles into a semiconductor body via at least one contact hole in an insulation layer formed on top of the semiconductor body, forming a contact electrode electrically connected to the semiconductor body in the at least one contact hole, and annealing the semiconductor body to diffuse the recombination center particles in the semiconductor body. ... Infineon Technologies Austria Ag

06/21/18 / #20180175187

Semiconductor device comprising a plurality of transistor cells and manufacturing method

A semiconductor device comprises a plurality of transistor cells. Each one of the plurality of transistor cells comprises a trench extending into a drift zone of a semiconductor body from a first surface, the drift zone being of a first conductivity type. ... Infineon Technologies Austria Ag

06/21/18 / #20180172783

Lateral transmission of signals across a galvanic isolation barrier

In some examples, a device includes a first conductive region and a second conductive region that is galvanically isolated from the first conductive region. The device further includes one or more conductors, wherein each conductor of the one or more conductors is electrically connected to circuitry in the first conductive region. ... Infineon Technologies Austria Ag

06/14/18 / #20180166976

Power factor corrector with regulation circuitry

A power factor corrector with regulation circuitry. The power factor corrector includes converter circuitry and controller circuitry coupled to the converter circuitry. ... Infineon Technologies Austria Ag

06/14/18 / #20180166375

Semiconductor device, electronic component and method

In an embodiment, a semiconductor device includes a galvanically isolated signal transfer coupler having a contact pad. The contact pad includes a metallic base layer, a metallic diffusion barrier layer arranged on the metallic base layer, and a metallic wire bondable layer arranged on the metallic diffusion barrier layer. ... Infineon Technologies Austria Ag

06/14/18 / #20180166366

Semiconductor devices including exposed opposing die pads

A semiconductor device includes a first lead frame, a second lead frame, a first semiconductor chip, and an encapsulation material. The first lead frame includes a first die pad having a first surface and a second surface opposite to the first surface. ... Infineon Technologies Austria Ag

06/07/18 / #20180159528

Active gate-source capacitance clamp for normally-off hemt

A semiconductor assembly includes a first fet having gate, source and drain terminals, a switching device being configured to electrically short a gate-source capacitance of the first fet responsive to a control signal, a first gate lead, a second gate lead, a drain lead, and a source lead. The first and second gate leads, the drain lead, and the source lead form externally accessible terminals of the semiconductor assembly. ... Infineon Technologies Austria Ag

06/07/18 / #20180159424

Multi-cell power converter with improved start-up routine

A power converter circuit includes a plurality of first converter cells, a plurality of second converter cells, and a plurality of dc link capacitors. Each of the plurality of first converter cells is coupled to a corresponding one of the plurality of dc link capacitors. ... Infineon Technologies Austria Ag

06/07/18 / #20180158964

Methods for manufacturing a semiconductor device having a non-ohmic contact formed between a semiconductor material and an electrically conductive contact layer

An embodiment of a method of manufacturing a semiconductor device includes providing a semiconductor material that comprises sic and forming an electrically conductive contact layer on the semiconductor material. A non-ohmic contact is formed between the semiconductor material and the electrically conductive contact layer. ... Infineon Technologies Austria Ag

06/07/18 / #20180158901

Superjunction semiconductor device having a superstructure

According to an embodiment of a semiconductor substrate, the semiconductor substrate includes a superjunction structure in a device region of a semiconductor layer and an alignment mark in a kerf region of the semiconductor layer. The superjunction structure includes first regions and second regions of opposite conductivity types, the first and the second regions alternating along at least one horizontal direction. ... Infineon Technologies Austria Ag

06/07/18 / #20180158758

Leadframe and method of manufacturing the same

A method of manufacturing a hybrid leadframe is provided comprising providing a thin leadframe layer comprising a diepad and a structured region and attaching a metal layer on the diepad, wherein the metal layer has a thickness which is larger than a thickness of the thin leadframe layer.. . ... Infineon Technologies Austria Ag

05/31/18 / #20180152793

Mems device and method for producing a mems device

A mems device is provided. The mems device includes a membrane, and at least one electrode arranged at a distance from the membrane. ... Infineon Technologies Austria Ag

05/31/18 / #20180152111

Adaptive synchronous rectifier timing for resonant dc/dc converters

A resonant or semi-resonant dc/dc converter makes use of one or more synchronous rectification (sr) switches for rectifying an output current that is provided to a load of the converter. The sr switches are ideally turned off when zero current is flowing through them. ... Infineon Technologies Austria Ag

05/31/18 / #20180151681

Normally off hemt with self aligned gate structure

A heterostructure body with a buffer region, and a barrier region disposed on the buffer region is provided. A gate trench is formed in the barrier region. ... Infineon Technologies Austria Ag

05/31/18 / #20180151676

Method for manufacturing a semiconductor device

A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having a first side; forming a trench in the semiconductor substrate, the trench having a bottom and a sidewall extending from the bottom to the first side of the semiconductor substrate; forming an insulation structure including at least a first insulation layer and a second insulation layer on the sidewall and the bottom of the trench; forming a lower conductive structure in the lower portion of the trench; removing the second insulation layer in an upper portion of the trench while leaving the second insulation layer at least partially in a lower portion of the trench; and forming an upper conductive structure in the upper portion of the trench.. . ... Infineon Technologies Austria Ag

05/31/18 / #20180151481

Semiconductor device including a bidirectional switch

A semiconductor device forming a bidirectional switch includes a carrier, first and second semiconductor elements arranged on the carrier, a first row of terminals arranged along a first side face of the carrier, a second row of terminals arranged along a second side face of the carrier opposite the first side face, and an encapsulation body encapsulating the first and second semiconductor elements. Each row of terminals includes a gate terminal, a sensing terminal and at least one power terminal of the bidirectional switch.. ... Infineon Technologies Austria Ag

05/24/18 / #20180145595

Bridgeless flyback converter circuit and method of operating thereof

A circuit includes a bridgeless flyback converter having a primary side electromagnetically coupled to a secondary side by a transformer, the primary side being devoid of a diode bridge rectifier, an input capacitor coupled to the primary side of the bridgeless flyback converter, an output capacitor coupled to the secondary side of the bridgeless flyback converter, an emi (electromagnetic interference) filter coupled between an ac input and the input capacitor, and a compensation stage coupled in parallel with the output capacitor and including a storage capacitor. The input capacitor has a capacitance such that the compensation stage filters the ac mains frequency ripple of the ac input from the secondary side. ... Infineon Technologies Austria Ag

05/24/18 / #20180145038

Methods for forming semiconductor devices and semiconductor device

A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. ... Infineon Technologies Austria Ag

05/24/18 / #20180143935

Bus device with programmable address

An embodiment bus device with a programmable address includes a bus communication circuit connected to a bus terminal, a first pin terminal, a memory having a first register with a first address stored therein and a second register, and a state logic circuit. The state logic circuit detects a chip select signal on the first pin terminal, receives a first message through the bus communication circuit while the chip select signal is asserted, determines that the first message indicates an address set command, and saves an address value in the first message as a second address in the second register in response to a target address in the first message matching the first address. ... Infineon Technologies Austria Ag

05/17/18 / #20180138817

Knee point detection for power converter control

A power converter includes a controller. The controller is configured to charge a capacitor of the controller based on a peak voltage applied to a primary-side winding of a transformer of the power converter. ... Infineon Technologies Austria Ag

05/17/18 / #20180138304

High electron mobility transistor with graded back-barrier region

A semiconductor device includes a type iii-v semiconductor body having a main surface and a rear surface opposite the main surface. A barrier region is disposed beneath the main surface. ... Infineon Technologies Austria Ag

05/17/18 / #20180138278

Semiconductor device

A semiconductor device includes a semiconductor body having a main surface and an active region surrounded by a non-active region. A trench extends from the main surface into the semiconductor body. ... Infineon Technologies Austria Ag

05/10/18 / #20180131365

System and method for variable impedance gate driver

In accordance with an embodiment, a circuit including: a gate driver coupled to a first supply terminal and to an output terminal, the output terminal configured to be coupled to a gate of a switching transistor via an inductive element, the gate driver configured to receive a switching signal; provide a first gate activation voltage at the output terminal with a first output resistance when the switching signal transitions from a first state to a second state; provide the first gate activation voltage at the output terminal with a second output resistance after a first time of providing the first gate activation voltage at the output terminal with the first output resistance, the second output resistance being larger than the first output resistance; and provide a first gate deactivation voltage at the output terminal when the switching signal transitions from the second state to the first state.. . ... Infineon Technologies Austria Ag

05/10/18 / #20180131263

Multiphase power supply and distributed phase control

A power converter circuit includes multiple phases and controller circuitry. The multiple phases collectively operate to produce an output voltage to power a load. ... Infineon Technologies Austria Ag

05/03/18 / #20180123466

Control of switching frequency based on difference in phase relations

In some examples, a method of controlling a first switch and a second switch of a resonant mode power converter circuit, the method comprising delivering control signals to the first switch and the second switch at a switching frequency. The method also comprises determining, for a first driving period, a first phase relation between a phase of a resonant current in the resonant mode power converter circuit and a phase of the control signals. ... Infineon Technologies Austria Ag

05/03/18 / #20180123461

Controller device for resonant mode power converter circuit

In some examples, a controller device for a resonant mode power converter circuit comprises a feed-forward pin configured to receive an input voltage signal of the resonant mode power converter circuit, a feedback pin configured to receive an output voltage signal of the resonant mode power converter circuit, processing circuitry configured to determine a switching frequency based on the input voltage signal and the output voltage signal, a first control pin configured to deliver a first control signal to the first switch at the switching frequency, and a second control pin configured to deliver a second control signal the second switch at the switching frequency.. . ... Infineon Technologies Austria Ag

05/03/18 / #20180123443

Multiphase power supply and phase control

A multi-phase power supply circuit includes at least a first phase and a second phase (such as semi-resonant dc-dc power converter circuits), each of which output current to power a load. The first phase includes a first inductor device through which first current is delivered to the load. ... Infineon Technologies Austria Ag

05/03/18 / #20180122934

Semiconductor device having a trench gate

A semiconductor device includes a gate structure extending from a first surface into a semiconductor portion and having a metal gate electrode and a gate dielectric separating the metal gate electrode from the semiconductor portion. An interlayer dielectric separates a first load electrode from the semiconductor portion, and includes a screen oxide layer thinner than the gate dielectric. ... Infineon Technologies Austria Ag

05/03/18 / #20180120886

Voltage regulation system and method for providing power to a load

A voltage regulation system for providing power to a load is provided. The voltage regulation system includes a voltage regulator operable to: set an operating voltage of the load at a first voltage level which corresponds to a first voltage requirement of the load; receive a second voltage requirement of the load which is different than the first voltage requirement; produce a voltage ramp signal which transitions from the first voltage level to a second voltage level which corresponds to the second voltage requirement at a defined ramp rate; and ramp the operating voltage from the first voltage level to the second voltage level based on the voltage ramp signal and at the same ramp rate as the voltage ramp signal, but with a lag between the voltage ramp signal and the ramp in the operating voltage.. ... Infineon Technologies Austria Ag

04/19/18 / #20180109258

Electronic drive circuit

According to an embodiment of an electronic circuit, the electronic circuit includes a first input pin, a second input pin, an output pin, a control circuit and an output circuit. The first input pin is configured to receive a first input signal that includes an enable information and at least one operation parameter information. ... Infineon Technologies Austria Ag

04/19/18 / #20180109198

Switching frequency modulation in a switched mode power supply

In accordance with an embodiment, a method includes driving at least one electronic switch coupled to at least one inductor in a converter stage of a switched mode power supply based on a clock signal, and modulating a clock frequency of the clock signal over a predefined first frequency range around a center frequency such that a frequency spectrum of the clock signal is asymmetric. The switched mode power supply includes a filter coupled between the converter stage and an input of the switched mode power supply.. ... Infineon Technologies Austria Ag

04/19/18 / #20180106686

Temperature sensing and control of resistive heating elements

A method for temperature sensing and control of resistive heating elements includes providing a power signal to a heater, the power signal having pulse width modulated (pwm) power pulses, providing a measurement pulse to the heater, with the measurement pulse being between two pwm power pulses, measuring a voltage across the heater, and determining a resistance of the heater according to the voltage across the heater and a current of the measurement pulse. A temperature of the heater is determined according to the determined resistance of the heater.. ... Infineon Technologies Austria Ag

04/12/18 / #20180102774

System and method for a current controller

In accordance with an embodiment of the present invention, a method of controlling current through a transistor includes measuring a voltage across the transistor, measuring a current through the transistor, determining a safe operating current for the measured voltage across the transistor, and adjusting a voltage of a control node of the transistor using a feedback controller until the measured current through the transistor is not greater than the determined safe operating current.. . ... Infineon Technologies Austria Ag

04/12/18 / #20180102262

Method of manufacturing a semiconductor power package

A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip. The covering material has an elastic modulus less than an elastic modulus of a material of the pre-molded chip housing and/or a thermal conductivity greater than a thermal conductivity of the material of the pre-molded chip housing and/or a temperature stability greater than a temperature stability of the pre-molded chip housing.. ... Infineon Technologies Austria Ag

04/05/18 / #20180097515

System and method for an overpower detector

A system and method for an overcurrent detector includes a device. The device includes a threshold generation circuit, and an overpower determination circuit. ... Infineon Technologies Austria Ag

04/05/18 / #20180097446

Power converter damage protection

In one example, a method includes activating, by a controller of a power converter, a switch of the power converter that controls an amount of energy provided by the power converter; receiving, by an input of the controller, a signal that represents an amount of current flowing through the switch; responsive to determining that the amount of current flowing through the switch is greater than or equal to a threshold amount of current, deactivating, by the controller, the switch; and responsive to determining that an amount of time elapsed since activation of the switch is greater than a threshold amount of time, deactivating, by the controller, the switch.. . ... Infineon Technologies Austria Ag

03/29/18 / #20180091046

Switched mode power converter with peak current control

In accordance with an embodiment, a method, includes operating a power converter that comprises an electronic switch connected in series with an inductor in one of a first operation mode and a second operation mode. Operating the power converter in each of the first operation mode and the second operation mode includes driving the electronic switch in a plurality of successive drive cycles based on drive parameter. ... Infineon Technologies Austria Ag

03/22/18 / #20180083132

Semiconductor device

A semiconductor device includes a semiconductor body including a base region and two semiconductor mesas separated from each other by an insulated trench gate structure extending from a first side into the base region, and including a dielectric layer separating a gate electrode from the semiconductor body. Each semiconductor mesa includes, in a cross-section perpendicular to the first side, a body region forming a pn-junction with the base region, a latch-up-safety region of the same conductivity type as the body region arranged between the body region and the first side, and having a higher doping concentration than the body region, and an emitter region between the dielectric layer and the latch-up-safety region and forming a pn-junction with the body region. ... Infineon Technologies Austria Ag

03/22/18 / #20180083111

Semiconductor device with first and second field electrode structures

A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field electrode structures include a first field dielectric insulating spicular first field electrodes against the semiconductor portion. ... Infineon Technologies Austria Ag

03/22/18 / #20180081386

Dac controlled low power high output current source

This disclosure describes a precise, fast, and relatively low power current-source for use in various applications, which may include driving power semiconductors such power mosfets and igbts. The current-source may provide both a constant current and a current profile over time which may charge and discharge the steering terminal (e.g. ... Infineon Technologies Austria Ag

03/15/18 / #20180076722

Power limiting for flyback converter

A controller of a power converter is described that after switching-on a primary switch of a power converter, detects a voltage that is indicative of a primary current through the primary switch and responsive to determining that the voltage exceeds a direct-current (dc) voltage threshold, switches-off the primary switch. The controller stores a peak value of the voltage while switching-off the primary switch, and responsive to determining that the peak value is higher or lower than a range of target values associated with the peak value of the voltage, the controller adjusts at least one of the dc voltage threshold or the range of target values for a subsequent switching cycle of the primary switch.. ... Infineon Technologies Austria Ag

03/15/18 / #20180076090

Methods for producing semiconductor devices

A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.. . ... Infineon Technologies Austria Ag

03/08/18 / #20180069544

Switch device

Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.. . ... Infineon Technologies Austria Ag

03/01/18 / #20180062642

Tailored switching of power transistors

A circuit comprises an input terminal configured to receive an input signal. A high-side driver is configured to provide a high-side control signal to a high-side power transistor via a high-side terminal based on the input signal. ... Infineon Technologies Austria Ag

03/01/18 / #20180062523

Current sensing in an electromagnetic component using an auxiliary winding stub

Many electronic devices, such as voltage converters, motors, etc., include electromagnetic components through which the current flow must be estimated. Such electromagnetic components include transformer windings, motor windings, and other types of inductors. ... Infineon Technologies Austria Ag

03/01/18 / #20180061979

Method of manufacturing a superjunction semiconductor device and superjunction semiconductor device

A semiconductor device is manufactured in a semiconductor body of a wafer by forming a mask on a surface of the semiconductor body. The mask has a plurality of first mask openings in a transistor cell area and a mask opening design outside the transistor cell area. ... Infineon Technologies Austria Ag

03/01/18 / #20180061939

Semiconductor device including super junction structure

A semiconductor device of an embodiment includes transistor cells in a transistor cell area of a semiconductor body. A super junction structure in the semiconductor body includes a plurality of drift sub-regions and compensation sub-regions of opposite first and second conductivity types, respectively, and alternately arranged along a lateral direction. ... Infineon Technologies Austria Ag

03/01/18 / #20180061938

Transistor device with high avalanche robustness

A transistor device includes drain, source and gate nodes, a plurality of drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type, and a control structure connected between the drift region of each of the drift and compensation cells and the source node. Each drift region is coupled to the drain node and each compensation region cells is coupled to the source node. ... Infineon Technologies Austria Ag

03/01/18 / #20180061937

Charge compensation semiconductor devices

A field-effect semiconductor device includes a semiconductor body having a first semiconductor region of a first conductivity type, a first side, an edge delimiting the semiconductor body in a direction substantially parallel to the first side, an active area, and a peripheral area arranged between the active area and the edge. A first metallization is arranged on the first side, and a second metallization is arranged opposite the first metallization and in ohmic connection with the first semiconductor region. ... Infineon Technologies Austria Ag

03/01/18 / #20180061772

Semiconductor lithography alignment feature with epitaxy blocker

A type iii-v semiconductor substrate is provided. Semiconductor material is removed from the type iii-v semiconductor substrate such that the type iii-v semiconductor substrate comprises one or more alignment features extending away from a main lateral surface. ... Infineon Technologies Austria Ag

03/01/18 / #20180061745

Semiconductor chip package having a repeating footprint pattern

A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. ... Infineon Technologies Austria Ag

02/15/18 / #20180048237

Isolated dc-dc voltage converters

A switching voltage converter using an isolated topology includes a transformer for coupling power from an input source to an output load. The transformer must be protected to prevent saturation of its core due to excessive magnetic flux density as the transformer transfers power from its primary side to its secondary side. ... Infineon Technologies Austria Ag

02/15/18 / #20180047813

Methods of forming substrate structures and semiconductor components

In an embodiment, a method includes forming an intentionally doped superlattice laminate on a support substrate, forming a group iii nitride-based device having a heterojunction on the superlattice laminate layer, and forming a charge blocking layer between the heterojunction and the superlattice laminate.. . ... Infineon Technologies Austria Ag

02/15/18 / #20180047719

Method of manufacturing a semiconductor die

A method of manufacturing a semiconductor die includes: forming a power hemt (high-electron-mobility transistor) in a iii-nitride semiconductor substrate, the power hemt having a gate, a source and a drain; monolithically integrating a first gate driver hemt with the power hemt in the iii-nitride semiconductor substrate, the first gate driver hemt having a gate, a source and a drain and logically forming part of a driver; and electrically connecting the first gate driver hemt to the gate of the power hemt so that the first gate driver hemt is operable to turn the power hemt off or on responsive to an externally-generated control signal received from the driver or other device.. . ... Infineon Technologies Austria Ag

02/08/18 / #20180040689

Semiconductor device with drift zone and backside emitter and method of manufacturing thereof

An epitaxial layer is formed by epitaxy on a base substrate at a front side. From opposite to the front side, at least a portion of the base substrate is removed, wherein the base substrate is completely removed or a remnant base section has a thickness of at most 20 μm. ... Infineon Technologies Austria Ag

02/01/18 / #20180034460

System and method for a switch transistor driver

In accordance with an embodiment, a method of driving a switching transistor includes receiving an activation signal for the switching transistor and generating a sequence of random values. Upon receipt of the activation signal, a control node of the switching transistor is driven with a drive strength based on a random value of the sequence of random values.. ... Infineon Technologies Austria Ag

02/01/18 / #20180034375

Semi-resonant power converters and methods of operation

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (sr) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the sr switch. ... Infineon Technologies Austria Ag

02/01/18 / #20180034367

Semi-resonant and resonant converters and method of control

A state machine for a multi-phase voltage converter controls cycle-by-cycle switching of the phases by: entering a first state in which a control signal for the high-side switch is activate and control signals for the low-side and sr (synchronous rectification) switches are deactivate; entering a second state in which the control signals for all switches are deactivate; entering a third state in which the control signal for the high-side switch is deactivate and the control signals for the low-side and sr switches are activate; entering a fourth state in which the control signals for the high-side and low-side switches are deactivate and the control signal for the sr switch is activate and then entering a fifth state in which the control signals for all switches are deactivate, or entering the fifth state without entering the fourth state; and entering the first state at the beginning of the next switching cycle.. . ... Infineon Technologies Austria Ag

02/01/18 / #20180033886

Semiconductor devices, electrical devices and methods for forming a semiconductor device

A semiconductor device includes a plurality of compensation regions arranged in a semiconductor substrate of the semiconductor device. The compensation regions of the plurality of compensation regions have a first conductivity type. ... Infineon Technologies Austria Ag

02/01/18 / #20180033884

Semiconductor device having a non-depletable doping region

A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical electrical element arrangement and a non-depletable doping region. The compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device. ... Infineon Technologies Austria Ag

02/01/18 / #20180033859

Transistor device with a field electrode that includes two layers

Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. ... Infineon Technologies Austria Ag

02/01/18 / #20180033627

Reverse-blocking igbt having a reverse-blocking edge termination structure

A reverse-blocking igbt (insulated gate bipolar transistor) includes a plurality of igbt cells disposed in a device region of a semiconductor substrate, a reverse-blocking edge termination structure disposed in a periphery region of the semiconductor substrate which surrounds the device region, one or more trenches formed in the periphery region between the reverse-blocking edge termination structure and an edge face of the semiconductor substrate, a p-type dopant source at least partly filling the one or more trenches, and a continuous p-type doped region disposed in the periphery region and formed from p-type dopants out-diffused from the p-type dopant source. The continuous p-type doped region extends from a top surface of the semiconductor substrate to a bottom surface of the semiconductor substrate.. ... Infineon Technologies Austria Ag

01/25/18 / #20180026626

Adaptive gate driver

A device driver is described that includes an output stage and one or more control components. The output stage is configured to produce a gate driver output for driving a gate terminal of a semiconductor device, the output stage comprising a variable driving capability. ... Infineon Technologies Austria Ag

01/25/18 / #20180026130

Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode

A method of manufacturing a semiconductor device includes: forming a trench extending into a semiconductor substrate and a polysilicon gate electrode in the trench; forming a body region of a first conductivity type in the substrate adjacent the trench and a source region of a second conductivity type adjacent the body region and the trench; forming a dielectric layer on the substrate; forming a gate metallization on the dielectric layer which covers part of the substrate and a source metallization on the dielectric layer which is electrically connected to the source region, spaced apart from the gate metallization and covering a different part of the substrate than the gate metallization; and forming a metal-filled groove in the polysilicon gate electrode which is electrically connected to the gate metallization. The metal-filled groove extends along a length of the trench underneath at least part of the source metallization.. ... Infineon Technologies Austria Ag

01/18/18 / #20180019310

Power semiconductor device having a field electrode

A power semiconductor device includes: a semiconductor body for conducting a load current between first and second load terminals; source and channel regions and a drift volume in the semiconductor body; a semiconductor zone in the semiconductor body and coupling the drift volume to the second load terminal, a first transition established between the semiconductor zone and the drift volume; a control electrode insulated from the semiconductor body and the load terminals and configured to control a path of the load current in the channel region; and a trench extending into the drift volume along an extension direction and including a field electrode. An ohmic resistance of the field electrode is greater than an ohmic resistance of the control electrode. ... Infineon Technologies Austria Ag

01/18/18 / #20180019132

Method for producing a superjunction device

Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of at least one of a first type and a second type into at least one of a first sidewall and a second sidewall of each of the plurality of trenches of the semiconductor layer.. ... Infineon Technologies Austria Ag

01/11/18 / #20180013422

Half bridge coupled resonant gate drivers

In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy; transferring the first energy from the first inductor to a second inductor, wherein the second inductor is coupled between a second switch-driving terminal of the switch driver and a second internal node, and the second inductor is magnetically coupled to the first inductor; asserting a first turn-on signal at the second switch-driving terminal using the transferred first energy; energizing the first inductor in a second direction opposite the first direction with a second energy after asserting the first turn-on signal at the second switch-driving terminal; transferring the second energy from the first inductor to the second inductor; and asserting a first turn-off signal at the second switch-driving terminal using the transferred second energy.. . ... Infineon Technologies Austria Ag

01/11/18 / #20180013344

System and method for controlling current in a switching regulator

In accordance with an embodiment, a method of operating a switch-mode power supply includes receiving a measurement of a first current of the switch-mode power supply, determining a ripple of the first current based on the received measurement of the first current, determining a maximum current threshold based on a target average current and the determined ripple of the first current, determining an off time of a switch based on a target current ripple and the determined ripple of the first current, turning off the switch when the first current reaches the maximum current threshold, and turning on the switch after the determined off time has elapsed after turning off the switch.. . ... Infineon Technologies Austria Ag

01/04/18 / #20180006560

Method and apparatus for limiting inrush current during startup of a buck converter

A method of regulating an output voltage of a buck converter during a startup period in which the buck converter is first enabled includes regulating the output voltage of the buck converter to a reference voltage under current-mode control during a first part of the startup period, and regulating the output voltage of the buck converter to the reference voltage under voltage-mode control during a second, later part of the startup period. The reference voltage ramps up from an initial voltage at the beginning of the startup period to a target voltage at the end of the startup period. ... Infineon Technologies Austria Ag

01/04/18 / #20180006147

Method of manufacturing a super junction semiconductor device and super junction semiconductor device

A semiconductor device is manufactured by: i) forming a mask on a process surface of a semiconductor layer, elongated openings of the mask exposing part of the semiconductor layer and extending along a first lateral direction; ii) implanting dopants of a first conductivity type into the semiconductor layer based on tilt angle α1 between an ion beam direction and a process surface normal and based on twist angle ω1 between the first lateral direction and a projection of the ion beam direction on the process surface; iii) implanting dopants of a second conductivity type into the semiconductor layer based on tilt angle α2 between an ion beam direction and the process surface normal and based on twist angle ω2 between the first lateral direction and a projection of the ion beam direction on the process surface; and repeating i) to iii) at least one time.. . ... Infineon Technologies Austria Ag

12/28/17 / #20170373608

Power converter including an autotransformer and power conversion method

A power converter circuit includes a chopper circuit configured to receive an input voltage and generate a chopper voltage with an alternating voltage level based on the input voltage, an autotransformer including at least one tap, the autotransformer being coupled to the chopper circuit and configured to generate a tap voltage at the at least one tap, and a selector circuit configured to receive a plurality of voltage levels. At least one of these the voltage levels is based on the at least one tap voltage. ... Infineon Technologies Austria Ag

12/28/17 / #20170373180

Power mosfet semiconductor

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. ... Infineon Technologies Austria Ag

12/28/17 / #20170373140

Semiconductor device with field dielectric in an edge area

A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. ... Infineon Technologies Austria Ag

12/21/17 / #20170366175

Phase shift clock for digital llc converter

The techniques of this disclosure may digitally generate a driver signal with a period (or frequency) at a finer resolution than can be achieved by simply counting clock cycles of a system clock. The driver signal may be configured to trigger based on single output clock signal that may be phase-shifted relative to the master system clock. ... Infineon Technologies Austria Ag

12/21/17 / #20170365702

High-electron-mobility transistor having a buried field plate

A high-electron-mobility semiconductor device includes: a buffer region having first, second and third cross-sections forming a stepped lateral profile, the first cross-section being thicker than the third cross-section and comprising a first buried field plate disposed therein, the second cross-section interposed between the first and third cross-sections and forming oblique angles with the first and third cross-sections; and a barrier region of substantially uniform thickness extending along the stepped lateral profile of the buffer region, the barrier region being separated from the first buried field plate by a portion of the buffer region. The buffer region is formed by a first semiconductor material and the barrier region is formed by a second semiconductor material. ... Infineon Technologies Austria Ag

12/21/17 / #20170365520

Method for producing an integrated heterojunction semiconductor device

A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface, and forming a hemt-structure above the <111>-surface.. ... Infineon Technologies Austria Ag

12/21/17 / #20170365464

Compound semiconductor substrate and method of forming a compound semiconductor substrate

A method of forming a compound semiconductor substrate includes providing a crystalline base substrate having a first semiconductor material and a main surface, and forming a first semiconductor layer on the main surface and having a pair of tracks disposed on either side of active device regions. The first semiconductor layer is formed from a second semiconductor material having a different coefficient of thermal expansion than the first semiconductor material. ... Infineon Technologies Austria Ag

12/21/17 / #20170364360

Power tool anti-theft

Techniques are disclosed for providing anti-theft protection for power tools. In one example of the techniques of the disclosure, at least one processor of a power tool receives, from an operator, a command to operate the power tool. ... Infineon Technologies Austria Ag

12/14/17 / #20170359897

Chip card module and method for producing a chip card module

In various embodiments, a chip card module is provided. The chip card module includes a chip card module contact array having six contact pads that are arranged in two rows having three contact pads each in accordance with iso 7816, and three additional contact pads that are arranged between the two rows. ... Infineon Technologies Austria Ag

12/14/17 / #20170359069

Level shifter circuit

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of an active high voltage level shifter device in response to a difference between the first low-side current and a second low-side current flowing into a second low-side terminal of an inactive high voltage level shifter device. ... Infineon Technologies Austria Ag

12/07/17 / #20170353114

Power supply regulation and bidirectional flow mode

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. ... Infineon Technologies Austria Ag

11/30/17 / #20170346397

Method and apparatus for phase current estimation in semi-resonant voltage converters

A resonant or semi-resonant voltage converter includes a synchronous rectification (sr) switch through which a current having a half-cycle sinusoidal-like shape is conducted when the sr switch is active. The current through the sr switch is modelled, and estimates of the sr switch current are generated by a digital estimator based on the model. ... Infineon Technologies Austria Ag

11/30/17 / #20170345924

Reduced gate charge field-effect transistor

In one implementation, a reduced gate charge field-effect transistor (fet) includes a drift region situated over a drain, a body situated over the drift region, and source diffusions formed in the body. The source diffusions are adjacent a gate trench extending through the body into the drift region and having a dielectric liner and a gate electrode situated therein. ... Infineon Technologies Austria Ag

11/30/17 / #20170345893

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a plurality of compensation regions of a first conductivity type arranged in a semiconductor substrate. The semiconductor device further includes a plurality of drift region portions of a drift region of a vertical electrical element arrangement. ... Infineon Technologies Austria Ag

11/30/17 / #20170345892

Method for forming a power semiconductor device and a power semiconductor device

A method of forming a power semiconductor device includes providing a semiconductor layer of a first conductivity type extending to a first side and having a first doping concentration of first dopants providing majority charge carriers of a first electric charge type in the layer, and forming a deep trench isolation including forming a trench which extends from the first side into the semiconductor layer and includes, in a vertical cross-section perpendicular to the first side, a wall, forming a compensation semiconductor region of the first conductivity type at the wall and having a second doping concentration of the first dopants higher than the first doping concentration, and filling the trench with a dielectric material. The amount of first dopants in the compensation semiconductor region is such that a field-effect of fixed charges of the first electric charge type which are trapped in the trench is at least partly compensated.. ... Infineon Technologies Austria Ag

11/30/17 / #20170343491

Method and apparatus for determining lattice parameters of a strained iii-v semiconductor layer

A multi-layer arrangement of iii-v semiconductor layers includes a strained iii-v semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained iii-v semiconductor layer are determined by generating a first scan in a qx direction for a chosen reflection in reciprocal space based on diffracted x-ray beam intensity measurements in the qx direction. ... Infineon Technologies Austria Ag

11/23/17 / #20170338338

Semiconductor devices and method for manufacturing semiconductor devices

A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending from the bottom to a first side of the semiconductor substrate; forming an auxiliary structure on the sidewall and the bottom of the recess and forming a hollow space within the recess; filling the hollow space with a filling material; forming a plug on the first side of the semiconductor substrate to cover the auxiliary structure at least on the sidewall of the recess; forming an opening in the plug to partially expose the auxiliary structure in the recess; removing the auxiliary structure at least partially from the sidewall of the recess to form cavities between the auxiliary structure and the sidewall; and sealing the opening in the plug.. . ... Infineon Technologies Austria Ag

11/23/17 / #20170338306

Method for manufacturing a power semiconductor device

A method for manufacturing a power semiconductor device includes: forming a drift region of a first conductivity type, a second emitter region of a second conductivity type, a pn-junction between the second emitter region and drift region, and a first emitter region having a first doping region of the first conductivity type and a second doping region of the first conductivity type; forming a first emitter metallization in contact with the first emitter region to form an ohmic contact between the first emitter metallization and the first doping region, and to form a non-ohmic contact between the first emitter metallization and the second doping region; and forming a second emitter metallization in contact with the second emitter region. The first emitter region is formed using a mask that is aligned with respect to the second emitter region, so that the first and second doping regions are formed in aligned relation.. ... Infineon Technologies Austria Ag

11/16/17 / #20170331386

Method and apparatus for phase alignment in semi-resonant power converters to avoid switching of power switches having negative current flow

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (sr) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the sr switch. ... Infineon Technologies Austria Ag

11/16/17 / #20170331383

Llc power converter and switching method thereof

In some embodiments, an inductor-inductor-capacitor (llc) converter includes a transformer having a primary winding, a secondary winding, and an auxiliary winding. The primary winding is coupled to a primary side circuit and the auxiliary winding has a first winding portion coupled between a first terminal and a middle terminal, and a second winding portion coupled between the middle terminal and a second terminal. ... Infineon Technologies Austria Ag

11/16/17 / #20170331380

Method and apparatus for phase alignment in semi-resonant power converters

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (sr) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the sr switch. ... Infineon Technologies Austria Ag

11/16/17 / #20170330964

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes an array of needle-shaped trenches extending into a semiconductor substrate. The semiconductor device further includes a gate trench grid extending into the semiconductor substrate. ... Infineon Technologies Austria Ag

11/16/17 / #20170330946

Semiconductor device having a trench gate electrode

A semiconductor device includes a semiconductor substrate comprising a main surface and a gate electrode in a trench between neighboring semiconductor mesas, the gate electrode is electrically insulated from the neighboring semiconductor mesas by a dielectric layer. The semiconductor device further includes a conductor arranged, at least partially, between neighboring dielectric contact spacers. ... Infineon Technologies Austria Ag

11/16/17 / #20170330941

Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices

A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer. Further, the method includes depositing a second insulation layer after forming the structured etch stop layer and forming a structured mask layer on the second insulation layer. ... Infineon Technologies Austria Ag

11/16/17 / #20170330808

Semiconductor structure having a test structure formed in a group iii nitride layer

In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a group iii nitride, one or more epitaxial group iii nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test structure formed in a group iii nitride layer. The test structure includes a plurality of trenches configured to provide an optical diffraction grating when illuminated by uv light. ... Infineon Technologies Austria Ag

10/26/17 / #20170310230

Self supply for synchronous rectifiers

A power converter with an isolated topology may include a primary side and a secondary side. The secondary side includes a self-powered synchronous rectifier. ... Infineon Technologies Austria Ag

10/26/17 / #20170310121

Protection and management of a power supply output shorted to ground

In some examples, a circuit is configured to receive an input signal and deliver, based on the input signal, a charging current to a capacitor. The circuit may be further configured to receive an output voltage that indicates a charge on the capacitor. ... Infineon Technologies Austria Ag

10/26/17 / #20170309713

Semiconductor device having stripe-shaped gate structures and spicular or needle-shaped field electrode structures

A semiconductor device includes a pair of stripe-shaped gate structures formed lengthwise in parallel in a first surface of a semiconductor body and extending into the semiconductor body, each stripe-shaped gate structure including a gate electrode and a gate dielectric separating the gate electrode from the semiconductor body. The semiconductor device further includes a plurality of field electrode structures formed in the semiconductor body between the pair of stripe-shaped gate structures, a body zone of a second conductivity type formed in the semiconductor body and extending between the pair of stripe-shaped gate structures, and a source zone of a first conductivity type opposite the second conductivity type formed in the body zone. ... Infineon Technologies Austria Ag

10/26/17 / #20170307668

Capacitance determination circuit and method for determining a capacitance

According to an embodiment, a capacitance determination circuit is provided comprising a voltage controlled oscillator configured to generate a frequency signal whose frequency depends on a control voltage supplied to the voltage controlled oscillator, a capacitor coupled to the voltage controlled oscillator wherein the control voltage depends on a voltage across the capacitor and a processing circuit configured to generate, based on the frequency signal generated by the voltage controlled oscillator over a time interval comprising at least one phase in which the capacitor is charged and comprising at least one phase in which the capacitor is discharged, an indication of the capacitance of the capacitor.. . ... Infineon Technologies Austria Ag

10/05/17 / #20170288654

Half bridge circuit, method of operating a half bridge circuit and a half bridge circuit package

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage limiting inductance arranged in series between the switch and the diode. The voltage limiting inductance is configured to limit, upon switching the switch, a maximum voltage across the switch to below a breakdown voltage of the switch. ... Infineon Technologies Austria Ag

10/05/17 / #20170288556

Circuits and methods for auxiliary secondary supply generation with self-starting primary side driver in isolated power converters

Circuits that provide an auxiliary power supply on the secondary side of an isolated switched-mode power converter are described. Such an auxiliary supply may be used to provide power to a secondary side controller or to other circuitry in the secondary side of the power converter. ... Infineon Technologies Austria Ag

10/05/17 / #20170288554

Power converter and power conversion method

In accordance with an embodiment, a power conversion method includes operating a power converter circuit in one of a first operation and a second operation mode based on a feedback signal and a signal level of an output signal at an output. The power converter includes a transformer with a primary winding and a secondary winding, a first electronic switch connected in series with the primary winding, and a rectifier circuit connected between the secondary winding and the output and comprising a second electronic switch. ... Infineon Technologies Austria Ag

10/05/17 / #20170288553

Power converter and power conversion method

In accordance with an embodiment, a method includes disabling a first electronic switch connected in series with a primary winding of a transformer in a power converter circuit if an auxiliary voltage across an auxiliary winding of the transformer is outside a predefined voltage range. The power converter circuit further includes a secondary winding of the transformer, and a rectifier circuit connected between the secondary winding and an output, where the rectifier circuit comprises a second electronic switch.. ... Infineon Technologies Austria Ag

10/05/17 / #20170287709

Semiconductor substrate with stress relief regions

A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base substrate in second regions that are adjacent to the first region. ... Infineon Technologies Austria Ag

10/05/17 / #20170285674

Protection from hard commutation events at power switches

A system is described that includes a half-bridge, a first driver, a second driver, and a controller unit. The half-bridge includes a first switch coupled to a second switch at a switching node. ... Infineon Technologies Austria Ag

09/21/17 / #20170271491

Semiconductor transistor and method for forming the semiconductor transistor

A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body the field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical semiconductor field-effect transistor further includes a gate electrode trench arranged next to the field electrode trench, extending from the front side into the semiconductor body, and having two electrodes which are separated from each other and the semiconductor body. ... Infineon Technologies Austria Ag

09/21/17 / #20170271454

Substrate structure, semiconductor component and method

In an embodiment, a substrate structure includes a support substrate, a buffer structure arranged on the support substrate, the buffer structure including an intentionally doped superlattice laminate, an unintentionally doped first group iii nitride layer arranged on the buffer structure, a second group iii nitride layer arranged on the first group iii nitride layer forming a heterojunction therebetween, and a blocking layer arranged between the heterojunction and the buffer structure. The blocking layer is configured to block charges from entering the buffer structure.. ... Infineon Technologies Austria Ag

09/14/17 / #20170263756

Semiconductor devices and a method for forming a semiconductor device

A semiconductor device includes a plurality of striped-shaped trenches extending into a semiconductor substrate. At least one trench of a first group of trenches of the plurality of striped-shaped trenches is located between two trenches of a second group of trenches of the plurality of striped-shaped trenches. ... Infineon Technologies Austria Ag

09/14/17 / #20170263720

Method of forming a semiconductor device

According to an embodiment of a method of forming a semiconductor device, a semiconductor layer including a first dopant species of a first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type is formed. The semiconductor layer is part of a semiconductor body having opposite first and second surfaces. ... Infineon Technologies Austria Ag

09/14/17 / #20170263378

Dc-dc converter assembly, method of manufacturing a dc-dc converter assembly and method of manufacturing an output inductor for a dc-dc converter assembly

A dc-dc converter assembly a power stage die of a dc-dc converter attached to a board, an output inductor attached to the board and electrically connected to an output of the power stage die, the output inductor accommodating the power stage die under the output inductor, a plurality of input capacitors attached to the board and electrically connected to input terminals of the power stage die, an output capacitor attached to the board and electrically connected to the output inductor, and a plurality of decoupling capacitors attached to the board and electrically connected to power terminals of the power stage die. A total footprint of the power stage die, the output inductor, the input capacitors, the output capacitor and the decoupling capacitors is at least a third of the combined surface area of the power stage die, the output inductor, the input capacitors, the output capacitor and the decoupling capacitors.. ... Infineon Technologies Austria Ag

09/07/17 / #20170256619

Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures

A semiconductor device includes a semiconductor substrate having a first surface, first and second field plate structures extending in a first direction parallel to the first surface, a plurality of gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the second direction being different than the first direction, and a plurality of source regions and drain regions of a first conductivity type arranged in an alternating manner at the first surface so that a drain region is disposed on one side of a gate electrode structure and a source region is disposed on the other side of the gate electrode structure. The gate electrode structures are disposed between the first and the second field plate structures. ... Infineon Technologies Austria Ag

08/31/17 / #20170250685

Double gate transistor device and method of operating

In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent the first gate electrode in a current flow direction of the transistor device.. . ... Infineon Technologies Austria Ag

08/31/17 / #20170250260

Double gate transistor device and method of operating

In accordance with an embodiment, a method include switching on a transistor device by generating a first conducting channel in a body region by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel in the body region by driving a second gate electrode. The first gate electrode is dielectrically insulated from a body region by a first gate dielectric, and the second gate electrode is dielectrically insulated from the body region by a second gate dielectric, arranged adjacent the first gate electrode, and separated from the first gate electrode by a separation layer. ... Infineon Technologies Austria Ag

08/31/17 / #20170250256

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. ... Infineon Technologies Austria Ag

08/31/17 / #20170250255

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating transistor sections of the transistor cells from each other, each of the transistor sections including a needle-shaped first field plate structure extending from a first surface into the semiconductor substrate. ... Infineon Technologies Austria Ag

08/31/17 / #20170249202

Requirement runtime monitor using temporal logic or a regular expression

A hardware monitor may receive information that identifies a requirement for a system. The requirement may be associated with operation of the system during a runtime operation of the system in an intended operating environment. ... Infineon Technologies Austria Ag

08/24/17 / #20170244407

Active gate-source capacitance clamp for normally-off hemt

A semiconductor assembly includes a first fet integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first fet responsive to a control signal.. ... Infineon Technologies Austria Ag

08/24/17 / #20170244332

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. ... Infineon Technologies Austria Ag

08/24/17 / #20170244330

Power converter with a snubber circuit

A power converter circuit includes a switching circuit with at least one electronic switch, a capacitor configured to provide or receive a voltage with a predefined voltage level, at least one first inductor, and a snubber circuit. The snubber circuit includes at least one second inductor inductively coupled to the at least one first inductor and electrically coupled to the capacitor.. ... Infineon Technologies Austria Ag

08/24/17 / #20170244328

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. ... Infineon Technologies Austria Ag

08/24/17 / #20170244327

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. ... Infineon Technologies Austria Ag

08/24/17 / #20170243938

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

A method of manufacturing semiconductor devices in a semiconductor wafer comprises forming charge compensation device structures in the semiconductor wafer. An electric characteristic related to the charge compensation device structures is measured. ... Infineon Technologies Austria Ag

08/24/17 / #20170243936

Vertical potential short in the periphery region of a iii-nitride stack for preventing lateral leakage

A semiconductor die includes a substrate and a semiconductor body supported by the substrate and having a periphery which is devoid of active devices and terminates at an edge face of the semiconductor die. The semiconductor body includes a first iii-nitride semiconductor layer and a plurality of second iii-nitride semiconductor layers below the first iii-nitride semiconductor layer. ... Infineon Technologies Austria Ag

08/24/17 / #20170242949

Transistor model, a method for a computer based determination of characteristic of a transistor, a device and a computer readable storage medium for performing the method

According to various embodiments, a transistor model for a computer based simulation of a field effect transistor may include: a first electrical network coupled between a drain node, a source node and a gate node, wherein the first electrical network is configured to represent an electrical characteristic of the field effect transistor in a forward operation; a second electrical network coupled parallel to the first electrical network and between the source node and the drain node, wherein the second electrical network is configured to represent an electrical characteristic of the field effect transistor in at least one of a commutation operation and a reverse operation; wherein the second electrical network includes: a controlled first source representing a parasitic junction of the field effect transistor; at least one controlled second source representing a charge injection dependent parasitic impedance of the field effect transistor; wherein the controlled first source and the at least one controlled second source are coupled in parallel; and wherein the controlled first source and the at least one controlled second source are coupled via at least one parameter such that a charge injection from the parasitic junction into the parasitic impedance is considered.. . ... Infineon Technologies Austria Ag

08/17/17 / #20170236913

Method of processing a semiconductor device

A method of processing a semiconductor device includes: creating first and second recesses in a surface of a semiconductor body; creating an insulation layer that forms first and second wells each having a common lateral extension range with the portion of the insulation layer located between the recesses; filling the wells with a plug material having the respective common lateral extension range with the insulation layer; removing a middle portion of the insulation layer located between the recesses; filling, with a filling material, a third recess created in a region where the middle portion has been removed and at least a portion of the space located between the wells; creating a first common surface of the insulation layer, the plug material, and the filling material; removing the plug material from the second well; and creating a second insulation layer that covers a side wall of the second recess.. . ... Infineon Technologies Austria Ag

08/17/17 / #20170236910

Methods of manufacturing a power mosfet

A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main surface of a semiconductor substrate; forming a gate trench in the main surface, the gate trench extending in a first direction parallel to the main surface; and for a gate electrode in the gate trench, the gate electrode being made of a gate electrode material that comprises a metal. The field plate trench is formed to have an extension length in the first direction which is less than double of an extension length of the field plate trench in a second direction, the second direction being perpendicular to the first direction.. ... Infineon Technologies Austria Ag

08/10/17 / #20170229959

Set point independent regulation of a switched mode power converter

A controller for controlling a power converter includes an analog-to-digital converter (adc) configured to output, based on a received analog voltage, a first digital value defined by a first resolution. The controller also includes a digital filter configured to adjust, based at least in part on the first digital value, a second digital value, wherein the second digital value is defined by a second resolution different from the first resolution. ... Infineon Technologies Austria Ag

08/03/17 / #20170222643

Driver for the high side switch of the cascode switch

In accordance with an embodiment, a circuit includes a first and a second switching transistors configured to be coupled in series between a first reference voltage terminal and a transformer. The circuit also includes a first diode coupled between a first drain of the first switching transistor and a first input terminal. ... Infineon Technologies Austria Ag








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