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Infineon Technologies Austria Ag patents (2014 archive)


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Austria Ag-related inventors


12/25/14 / #20140375361

System and method for driving transistors

In accordance with an embodiment, a circuit includes a first transistor, a second transistor having a reference node coupled to an output node of the first transistor, and a control circuit. The control circuit is configured to couple a second reference node to a control terminal of the second transistor during a first mode of operation, couple a floating reference voltage between the control terminal of the second transistor and the reference terminal of the second transistor during a second mode of operation and during a third mode of operation, and couple a third reference node to the reference terminal of the second transistor during the third mode of operation. ... Infineon Technologies Austria Ag

12/25/14 / #20140375330

Burst detection for lines to remote devices

In some implementations, a control device is coupled with an output, the output to be coupled with a remote device via a line, for example, in an industrial environment. A burst detector is coupled with the output to detect bursts on the line. ... Infineon Technologies Austria Ag

12/25/14 / #20140374882

Semiconductor device with recombination centers and method of manufacturing

A semiconductor device includes a semiconductor portion with one or more impurity zones of the same conductivity type. A first electrode structure is electrically connected to the one or more impurity zones in a cell area of the semiconductor portion. ... Infineon Technologies Austria Ag

12/25/14 / #20140374842

Semiconductor device with self-charging field electrodes

A semiconductor device includes a drift region of a first doping type, a junction between the drift region and a device region, and a field electrode structure in the drift region. The field electrode structure includes a field electrode, a field electrode dielectric adjoining the field electrode, arranged between the field electrode and the drift region, and having an opening, and at least one of a field stop region and a generation region. ... Infineon Technologies Austria Ag

12/25/14 / #20140374765

Gate stack for normally-off compound semiconductor transistor

A normally-off compound semiconductor transistor includes a heterostructure body and a gate stack on the heterostructure body. The heterostructure body includes a source, a drain spaced apart from the source, and a channel for connecting the source and the drain. ... Infineon Technologies Austria Ag

12/18/14 / #20140368147

Current measurement and overcurrent detection

Techniques are described for determining the amount of current flowing through an electrical conductor of an isolation device by measuring the voltage level across the electrical conductor. The isolation device also includes a sensor that provides a measure of the amount of current flowing through the electrical conductor. ... Infineon Technologies Austria Ag

12/18/14 / #20140367773

Method of manufacturing a semiconductor device with self-aligned contact plugs and semiconductor device

Semiconductor oxide pillars are selectively grown on semiconductor mesas between precursor structures that extend from a main surface into a semiconductor substrate. Spaces between the semiconductor oxide pillars are filled with one or more auxiliary materials to form alignment plugs in a vertical projection of the precursor structures. ... Infineon Technologies Austria Ag

12/18/14 / #20140367772

Semiconductor device including a drift zone and a drift control zone

A semiconductor device includes a semiconductor body having a drift zone of a first conductivity type and a drift control zone. A junction termination structure is at a first side of the semiconductor body. ... Infineon Technologies Austria Ag

12/18/14 / #20140367700

High-voltage cascaded diode with hemt and monolithically integrated semiconductor diode

An embodiment of a cascaded diode having a breakdown voltage exceeding 300v includes an hemt and a si schottky diode. The hemt includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. ... Infineon Technologies Austria Ag








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