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Infineon Technologies Austria Ag patents (2015 archive)


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Austria Ag-related inventors


12/31/15 / #20150380542

Charge compensation structure and manufacturing therefor

A charge-compensation semiconductor device includes a semiconductor body including a first surface, a second surface arranged opposite to the first surface, an edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, a drain region of a of a first conductivity type extending to the second surface, an active area, and a peripheral area arranged between the active area and the edge, a source metallization arranged on the first surface, and a drain metallization arranged on the drain region and in ohmic contact with the drain region. In a vertical cross-section substantially orthogonal to the first surface the charge-compensation semiconductor device further includes: an equipotential region in ohmic contact with the drain metallization and arranged in the peripheral area and next to the first surface, a low-doped semiconductor region arranged in the peripheral area and having a first concentration of dopants, and a plurality of first pillar regions alternating with second pillar regions in the active area and the peripheral area. ... Infineon Technologies Austria Ag

12/31/15 / #20150380348

Semiconductor device package with a rear side metallization of a semiconductor chip connecting an internal node

A semiconductor package includes a semiconductor chip having a semiconductor body having a main surface and a rear surface opposite the main surface. Control terminals and output terminals are arranged on the main surface. ... Infineon Technologies Austria Ag

12/31/15 / #20150378375

Cascode circuit

An electronic circuit includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a load path and an internal voltage divider with a voltage divider tap. ... Infineon Technologies Austria Ag

12/24/15 / #20150372585

System and method for a normally-on switched mode power supply

A method for operating a switched mode power supply (smps) during a start-up sequence includes receiving an input current at a bias supply circuit while a first relay and a second relay coupled to a first side circuit within the smps are open, generating a first bias supply voltage based on the received input current, closing the first relay after generating the first bias supply voltage, conducting the input current through the first relay and through an in-rush resistor coupled in series with the first relay, and closing the second relay after a first time period.. . ... Infineon Technologies Austria Ag

12/24/15 / #20150372087

Semiconductor switching devices with different local transconductance

A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells defining the active area and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. ... Infineon Technologies Austria Ag

12/24/15 / #20150372086

Semiconductor switching device with different local threshold voltage

A semiconductor device includes a semiconductor substrate having a plurality of switchable cells defining an active area of the semiconductor device, an outer rim, and an edge termination region arranged between the switchable cells and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. ... Infineon Technologies Austria Ag

12/24/15 / #20150372076

Semiconductor switching device with different local cell geometry

A semiconductor device includes a semiconductor substrate having an outer rim, a plurality of switchable cells defining an active area, and an edge termination region arranged between the switchable cells defining the active area and the outer rim. Each of the switchable cells includes a body region, a gate electrode structure and a source region. ... Infineon Technologies Austria Ag

12/24/15 / #20150371935

Embedded chip packaging technology

Representative implementations of devices and techniques provide a semiconductor package comprising a laminate substrate. The laminate substrate includes at least one conductive layer laminated to a surface of an insulating core. ... Infineon Technologies Austria Ag

12/17/15 / #20150366007

Propagation delay compensation for floating buck light emitting diode (led) driver

Devices, systems, and methods for improving a current spread of a light emitting diode (led). Some aspects including a peak detector and a variable gain amplifier coupled to the peak detector and configured to amplify an output of the peak detector. ... Infineon Technologies Austria Ag

12/17/15 / #20150365084

Circuits and methods for operating a circuit

According to various examples, circuits, detection circuits, methods for operating circuits and methods for operating power supplies are described herein. As one example, a circuit includes a transistor and a detection circuit. ... Infineon Technologies Austria Ag

12/17/15 / #20150364586

Insulated gate bipolar transistor

A semiconductor device is disclosed. One embodiment provides a cell area and a junction termination area at a first side of a semiconductor zone of a first conductivity type. ... Infineon Technologies Austria Ag

12/10/15 / #20150357913

Controllable on-time reduction for switching voltage regulators operating in pulse frequency modulation mode

A switching voltage regulator includes a power stage for delivering output current to a load through an inductor. The power stage has a high-side transistor and a low-side transistor. ... Infineon Technologies Austria Ag

12/10/15 / #20150357408

Semiconductor device with isolating layer on side and bottom surfaces

A method for manufacturing a semiconductor device comprises includes providing a substrate with a surface, forming an isolating layer on part of the surface, and forming a first semiconductor portion and spaced therefrom a second semiconductor portion on the surface of the substrate. The isolating layer is interposed between a side surface of the first semiconductor portion and a side surface of the second semiconductor portion which face each other. ... Infineon Technologies Austria Ag

12/03/15 / #20150349634

Inductor current measurement compensation for switching voltage regulators

A current estimation method for a switching voltage regulator that delivers current to a load through an inductor includes measuring a voltage across a capacitor of an rc current sense network coupled in parallel with the inductor, generating an estimate of the current through the inductor based on the voltage measured across the capacitor of the rc current sense network and adjusting the estimate of the current through the inductor by a compensation filter that compensates for variation in the inductance of the inductor as a function of at least one of temperature and current.. . ... Infineon Technologies Austria Ag

12/03/15 / #20150349632

Controlling a pair of switches

Devices and methods are provided where a feedback is provided from a control terminal of a first switch, and a second switch is controlled based on the feedback.. . ... Infineon Technologies Austria Ag

12/03/15 / #20150349573

Single stage rectification and regulation for wireless charging systems

A rectification and regulation circuit for a wireless power receiver includes a coil, a full-wave rectifier circuit and a control unit. The full-wave rectifier has a first pair of controllable rectifiers including a first transistor connected to a first terminal of the coil and a second transistor connected to a second terminal of the coil. ... Infineon Technologies Austria Ag

12/03/15 / #20150349538

Active rectifier for efficient wireless power transfer

Methods, devices, and integrated circuits are disclosed for efficiently receiving a wireless power transfer. In one example, a device configured for receiving a wireless power transfer includes an active rectifier, rectifier input nodes, and a controller. ... Infineon Technologies Austria Ag

12/03/15 / #20150349105

Semiconductor device and method

A semiconductor device includes a device region including a compound semiconductor material and a non-device region at least partially surrounding the device region. The semiconductor device further includes a dielectric material in the non-device region and at least one electrode in the device region. ... Infineon Technologies Austria Ag

12/03/15 / #20150349056

Semiconductor device comprising trench structures

A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell array in a semiconductor substrate. ... Infineon Technologies Austria Ag

12/03/15 / #20150346754

Bandgap voltage circuit with low-beta bipolar device

Representative implementations of devices and techniques provide a reduction in the spread of a bandgap voltage of a bandgap reference circuit. The biasing current for a target bipolar device is conditioned by passing it through one or more like bipolar devices prior to biasing the target bipolar device.. ... Infineon Technologies Austria Ag

12/03/15 / #20150346749

System and method for a linear voltage regulator

In accordance with an embodiment, a method of operating a power supply includes measuring an output signal of the power supply, determining a control voltage based on the measured output signal, and determining whether a supply voltage of a voltage follower circuit is greater than a first threshold. When the supply voltage of the voltage follower circuit is greater than the first threshold, the control voltage is applied to an input of the voltage follower circuit and an output of the voltage follower circuit is applied to a control node of an output transistor in a first mode. ... Infineon Technologies Austria Ag

11/26/15 / #20150341027

Circuit arrangement and method for generating a drive signal for a transistor

Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. ... Infineon Technologies Austria Ag

11/26/15 / #20150340947

Boost-buck based power converter

A power converter circuit may include a plurality of power converters, each comprising an input configured to receive input power from a power source, an output, a first converter connected to the input, and a second converter connected between the first converter and the output. The outputs of the plurality of power converters may be connected in series at an output of the power converter circuit. ... Infineon Technologies Austria Ag

11/26/15 / #20150338871

Voltage regulation system and method for providing power to a load

A voltage regulation system for providing power to a load is provided. The voltage regulation system includes a voltage regulator operable to set an operating voltage of the load at a first voltage level which corresponds to a first voltage requirement of the load, receive a second voltage requirement of the load which is different than the first voltage requirement and produce a voltage ramp from the first voltage level to the second voltage level. ... Infineon Technologies Austria Ag

11/19/15 / #20150333169

Semiconductor device with compensation structure

A semiconductor device includes a semiconductor body, which includes transistor cells and a drift zone between a drain layer and the transistor cells. The drift zone includes a compensation structure. ... Infineon Technologies Austria Ag

11/19/15 / #20150333168

Semiconductor device with field dielectric in an edge area

A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. ... Infineon Technologies Austria Ag

11/19/15 / #20150333166

Semiconductor device and method

A semiconductor device includes a first compound semiconductor material including a first doping concentration and a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material including a different material than the first compound semiconductor material. The semiconductor device further includes a control electrode and at least one buried semiconductor material region including a second doping concentration different from the first doping concentration. ... Infineon Technologies Austria Ag

11/19/15 / #20150333134

Semiconductor component with a monocrystalline semiconductor region arranged in a via region

A mos transistor semiconductor component includes a semiconductor body with first and second surfaces, a first contact electrode on the first surface, a second contact electrode on the second surface, a first insulation layer separating a via region at least from a drift region, a monocrystalline semiconductor region arranged in the via region and extending between the first surface and the second surface, a gate electrode electrically connected to the first contact electrode, a source electrode electrically insulated from the gate electrode, and arranged at least partially above the first surface, and a drain electrode electrically insulated from the second contact electrode on the second surface. The mos transistor has a gate terminal formed by the second contact electrode and electrically connected to a gate-electrode of the mos transistor through the via region. ... Infineon Technologies Austria Ag

11/12/15 / #20150327390

Electronic module, electronic system and method of manufacturing the same

An electronic module is provided, comprising an electronic chip arranged in the electronic module; at least two contact terminals electrically connected to the electronic chip each extending out of a package of the electronic module, wherein at least one of the at least two contact terminals is a signal contact terminal comprising a distal signal contact area, and at least another one of the at least two contact terminals is a power contact terminal comprising a distal power contact area; wherein the distal power contact area is adapted to be electrically connected to a power circuit external to the electronic module, wherein the external power circuit is oriented in a first plane; and wherein the distal signal contact area is adapted to be electrically connected to a signal circuit external to the electronic module, wherein the external signal circuit is oriented in a second plane extending perpendicular to the first plane.. . ... Infineon Technologies Austria Ag

11/12/15 / #20150326217

Integrated circuit comprising a clamping structure and method of adjusting a threshold voltage of a clamping transistor

An integrated circuit comprises a load transistor including first and second load terminals and a load control terminal. The integrated circuit further comprises a clamping structure. ... Infineon Technologies Austria Ag

11/12/15 / #20150325641

Super junction semiconductor device having strip structures in a cell area

A super junction semiconductor device includes a semiconductor portion having strip structures in a cell area. Each strip structure has a compensation structure with first and second sections inversely provided on opposite sides of a fill structure. ... Infineon Technologies Austria Ag

11/05/15 / #20150319864

High efficiency embedding technology

Representative implementations of devices and techniques provide improved electrical access to components, such as chip dice, for example, disposed within layers of a multi-layer printed circuit board (pcb). One or more insulating layers may be located on either side of a spacer layer containing the components. ... Infineon Technologies Austria Ag

11/05/15 / #20150318361

Method for forming a transistor device having a field electrode

A method for forming a transistor device includes forming a field electrode arrangement by forming a trench in a first surface of a semiconductor body, forming a protection layer on sidewalls of the trench in an upper trench section, forming a dielectric layer on a bottom of the trench and on sidewall sections uncovered by the protection layer, and forming a field electrode at least on the dielectric layer. The method further includes forming a gate electrode and a gate electrode dielectric horizontally spaced apart from the field electrode arrangement with respect to the first surface, forming a body region adjacent the gate electrode and dielectrically insulated from the gate electrode by the gate dielectric, and forming a source region in the body region.. ... Infineon Technologies Austria Ag

10/29/15 / #20150311803

Enhanced power factor correction

A power converter is described that includes a switch. The power converter may also include a controller that controls the switch. ... Infineon Technologies Austria Ag

10/29/15 / #20150311312

Method of manufacturing a high breakdown voltage iii-nitride device

A method of manufacturing a semiconductor device includes forming a semiconductor body including a compound semiconductor material on a substrate, the compound semiconductor material having a channel region, forming a source region extending to the compound semiconductor material, forming a drain region extending to the compound semiconductor material and spaced apart from the source region by the channel region, and forming an insulating region buried in the semiconductor body below the channel region between the compound semiconductor material and the substrate in an active region of the semiconductor device such that the channel region is uninterrupted by the insulating region. The active region includes the source, the drain and the channel region. ... Infineon Technologies Austria Ag

10/29/15 / #20150311282

Super junction semiconductor device including edge termination

A super junction semiconductor device includes a super junction structure and a channel stopper structure. The super junction structure includes first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction. ... Infineon Technologies Austria Ag

10/29/15 / #20150311195

Integrated transistor structure having a power transistor and a bipolar transistor

An integrated transistor structure includes an epitaxial layer on a semiconductor substrate, a power transistor formed in a first region of the epitaxial layer and having a drain region, a source region and a body region shorted to the source region, a bipolar transistor formed in a second region of the epitaxial layer spaced apart from the power transistor. A first trench structure formed in the epitaxial layer adjacent at least two opposing lateral sides of the power transistor includes a gate electrode spaced apart from a channel region of the power transistor by an insulating material. ... Infineon Technologies Austria Ag

10/29/15 / #20150311149

Semiconductor device with combined passive device on chip back side

Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. ... Infineon Technologies Austria Ag

10/29/15 / #20150310331

Rule-based register checking for digital voltage regulator controllers

A method of rule-based register checking for a digital voltage regulator controller includes: defining register settings for the digital voltage regulator via a gui (graphical user interface) based controller parameter configuration system; accessing a rule-based checker by the gui based configuration system to check for rule violations in the register settings; and uploading the register settings from the gui based configuration system to the digital voltage regulator controller after checking the register settings for rule violations. A non-transitory computer readable medium storing a computer program operable to implement the rule-based register checking is also provided.. ... Infineon Technologies Austria Ag

10/22/15 / #20150303799

Voltage regulator with power stage sleep modes

A power stage of a voltage regulator includes a first switch for connecting a load to a supply voltage in a first switching state of the power stage, a second switch for connecting the load to ground in a second switching state of the power stage and driver circuitry for setting the power stage in the first switching state, the second switching state or a non-switching state in which both switches are off responsive to a switching control signal received by the power stage. A power management unit moves the power stage from a nominal power mode to a first low power mode if the power stage is in the non-switching state for a predetermined time period.. ... Infineon Technologies Austria Ag

10/22/15 / #20150303298

Semiconductor device and super junction semiconductor device having semiconductor mesas

A semiconductor device includes semiconductor mesas of a first conductivity type extending between a first surface and a bottom plane of a semiconductor portion, and a semiconductor structure of a second, complementary conductivity type extending along sidewalls of the semiconductor mesas and outwardly from the semiconductor mesas. A thickness of the semiconductor structure has a local maximum value at a first distance to both the first surface and the bottom plane.. ... Infineon Technologies Austria Ag

10/01/15 / #20150280696

Circuit for common mode removal for dc-coupled front-end circuits

In one example, a method includes receiving a first differential signal including a first voltage signal and a second voltage signal, wherein the first differential signal includes a first common mode voltage; receiving a second common mode voltage. The method further includes determining, by a circuit, a second differential signal including a third voltage signal and a fourth voltage signal, wherein a difference between the third voltage signal and the fourth voltage signal is based on a difference between the first voltage signal and the second voltage signal, wherein the second differential signal includes the second common mode voltage. ... Infineon Technologies Austria Ag

10/01/15 / #20150280584

System and method for a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power supply includes detecting a voltage decrease in a secondary winding of a transformer by detecting a first voltage transient using a sensor capacitively coupled to the secondary winding of the transformer. A secondary switch coupled to the secondary winding of the transformer is turned on based on when the first voltage transient is detected.. ... Infineon Technologies Austria Ag

10/01/15 / #20150280576

System and method for a switched mode power supply

In accordance with an embodiment, a method of controlling a switched-mode power supply includes demagnetizing a secondary winding of a transformer, monitoring an ending condition of the demagnetizing, tracking an elapsed time until the ending condition is detected based on the monitoring, and shutting down the switched-mode power supply when the elapsed time exceeds a predetermined threshold.. . ... Infineon Technologies Austria Ag

10/01/15 / #20150280574

System and method for a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power supply includes turning on a semiconductor switch coupled to a primary winding of a transformer for a first time period of a first cycle, turning off the semiconductor switch for a second time period of the first cycle, detecting a change in slew rate of a voltage at an output node of the semiconductor switch, determining a switch turn-on time based on detecting the change in the slew rate, and turning on the semiconductor switch at the determined switch turn-on time for a first time period of a second cycle.. . ... Infineon Technologies Austria Ag

10/01/15 / #20150280573

System and method for a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power supply includes synchronously rectifying a current in a secondary side of the switched-mode power supply by detecting a voltage drop of a secondary winding of a transformer and activating a semiconductor switch coupled to the secondary winding when the voltage drop is detected. The method also includes determining a digital signal transmitting the digital signal to a controller coupled to a primary winding of the transformer by switching the semiconductor switch in accordance with the digital signal. ... Infineon Technologies Austria Ag

10/01/15 / #20150280563

Digital voltage regulator controller with multiple configurations

A digital voltage regulator controller includes control logic, an interface and configuration logic. The control logic is operable to control power stages of a voltage regulator so that groups of one or more of the power stages individually regulate one or more output voltages of the voltage regulator. ... Infineon Technologies Austria Ag

10/01/15 / #20150279962

Method for forming semiconductor components having self-aligned trench contacts

A method for producing a semiconductor component includes providing a semiconductor body having a first semiconductor material extending to a first surface and at least one trench, the at least one trench extending from the first surface into the semiconductor body, a first insulation layer being arranged in the at least one trench. The method further includes forming a second insulation layer on the first surface having a recess that overlaps in a projection onto the first surface with the at least one trench, forming a mask region in the recess, etching the second insulation layer selectively to the mask region, depositing a third insulation layer over the first surface, and etching the third insulation layer so that a semiconductor mesa of the semiconductor body arranged next to the at least one trench is exposed at the first surface.. ... Infineon Technologies Austria Ag

10/01/15 / #20150279783

Chip package and method for manufacturing the same

Various embodiments provide a chip package. The chip package may include a metallic chip carrier; at least one chip carried by the metallic chip carrier; encapsulation material encapsulating the at least one chip and the metallic chip carrier; and a plurality of redistribution layers disposed over the at least one chip opposite the metallic chip carrier, wherein at least one redistribution layer of the plurality of redistribution layers is electrically coupled with the at least one chip.. ... Infineon Technologies Austria Ag

09/24/15 / #20150270208

Power semiconductor device

A power semiconductor device is provided. The power semiconductor device includes a leadframe, which includes a first chip carrier part and at least one second chip carrier part, which are fitted at a distance from one another and are in each case electrically conductive, at least one first power semiconductor component applied on the first chip carrier part, at least one second power semiconductor component applied on the second chip carrier part, external contacts in the form of external leads, and a capacitor. ... Infineon Technologies Austria Ag

09/24/15 / #20150270194

Electronic component and leadframe

In an embodiment an electronic component includes a semiconductor die having a first surface, the first surface including a first current electrode and a control electrode. The electronic component further includes a die pad having a first surface, a plurality of leads and a gull-wing shaped conductive element coupled to a first lead of the plurality of leads. ... Infineon Technologies Austria Ag

09/17/15 / #20150263106

Semiconductor component and integrated circuit

A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. ... Infineon Technologies Austria Ag

09/17/15 / #20150263100

Operational gallium nitride devices

A power circuit is described that includes a semiconductor body having a common substrate and a gallium nitride (gan) based substrate. The gan based substrate includes one or more gan devices adjacent to a front side of the common substrate. ... Infineon Technologies Austria Ag

09/17/15 / #20150262942

Semiconductor workpiece having a semiconductor substrate with at least two chip areas

A semiconductor workpiece includes a semiconductor substrate, at least two chip areas, components of semiconductor devices being formed in the semiconductor substrate in the at least two chip areas, and a separation trench disposed between adjacent chip areas. The separation trench is formed in a first main surface of the semiconductor substrate and extends from the first main surface to a second main surface of the semiconductor substrate. ... Infineon Technologies Austria Ag

09/17/15 / #20150261248

Linear high speed tracking current sense system with positive and negative current

In general, this disclosure describes linear tracking current sense systems having improved accuracy, bandwidth, and stability. An example device comprises a half bridge comprising a high side switch and a low side switch. ... Infineon Technologies Austria Ag

09/10/15 / #20150256155

Electronic circuit and method for operating a transistor arrangement

An electronic circuit includes a transistor arrangement with a plurality of transistor devices, each including a control node and a load path between a first load node and a second load node, and having the load paths connected in parallel. The electronic circuit further includes a drive circuit coupled to the control node of each of the plurality of transistor devices, and configured to receive an input signal. ... Infineon Technologies Austria Ag

09/10/15 / #20150256152

System and method for driving transistors

In accordance with an embodiment, a circuit includes a first transistor, a second transistor having a reference node coupled to an output node of the first transistor, and a control circuit. The control circuit is configured to couple a second reference node to a control terminal of the second transistor during a first mode of operation, couple a floating reference voltage between the control terminal of the second transistor and the reference terminal of the second transistor during a second mode of operation and during a third mode of operation, and couple a third reference node to the reference terminal of the second transistor during the third mode of operation. ... Infineon Technologies Austria Ag

09/10/15 / #20150255590

Group iii-nitride-based enhancement mode transistor having a heterojunction fin structure

A group iii-nitride-based enhancement mode transistor having a heterojunction fin structure and a corresponding semiconductor device are described.. . ... Infineon Technologies Austria Ag

09/10/15 / #20150255573

Method of manufacturing a stress-controlled hemt

A method of manufacturing a semiconductor device includes providing a heterostructure body with a first doped region, a second doped region spaced apart from the first doped region and a two-dimensional charge carrier gas channel between the first and second doped regions, and forming a gate structure on the heterostructure body for controlling the channel, the gate structure comprising a piezoelectric material and an electrical conductor in contact with the piezoelectric material.. . ... Infineon Technologies Austria Ag

09/03/15 / #20150249448

Electronic circuit operable as an electronic switch

An electronic circuit includes an input node configured to receive an input voltage, and a load path between a first load node and a second load node. The circuit further includes a first transistor device, and n second transistor devices, with n≧1, wherein load paths of the first transistor device and the n second transistor devices are connected in series, thereby forming the load path of the electronic circuit. ... Infineon Technologies Austria Ag

09/03/15 / #20150249393

Interface circuits for usb and lighting applications

In accordance with an embodiment of the present invention, a method of operating a power supply circuit includes receiving an input signal comprising a request for a target power supply voltage and/or current at an interface circuit at a secondary side of an adjustable power supply. The input signal is converted into a digital signal comprising the target power supply voltage and/or current. ... Infineon Technologies Austria Ag

09/03/15 / #20150249390

Switching mode power supply

A method of operating a power supply having a transformer, a transistor controlling the current through a primary side of the transformer, and a control unit for controlling the switching of the transistor to generate current pulses in the transformer, is suggested, the method comprising receiving a feedback signal, and exiting a burst mode and entering a normal mode based on the feedback signal in case the feedback signal exceeds a first threshold value or in case the feedback signal exceeds a second threshold value for at least a first amount of time and in case the feedback signal exceeds a third threshold value, wherein the third threshold value is larger than the second threshold value and the first threshold value is larger than the third threshold value.. . ... Infineon Technologies Austria Ag

09/03/15 / #20150249354

Communication using load modulation

In one example, a method includes receiving, by a first device and from a second device, power via a power line of a cable connecting the first device to the second device, wherein receiving power comprises drawing, by the first device, current from the second device. The method may also include communicating, by the first device, with the second device via the power line, wherein communicating comprises adjusting, by the first device, the amount of current drawn by the first device.. ... Infineon Technologies Austria Ag

09/03/15 / #20150249134

Group iii-nitride-based enhancement mode transistor

A group iii-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a p-type group iii-nitride layer.. ... Infineon Technologies Austria Ag

09/03/15 / #20150249082

Field-effect semiconductor device

According to an embodiment of a semiconductor device, the semiconductor device includes a semiconductor body having a main surface, the semiconductor body including a drift region of a first band-gap material, the drift region being of a first conductivity type, and a metallization arranged at the main surface. In a cross-section which is substantially orthogonal to the main surface, the semiconductor body further includes a contact region of the first band-gap material directly adjoining the drift region and the metallization, and an anode region of a second band-gap material having a lower band-gap than the first band-gap material. ... Infineon Technologies Austria Ag

09/03/15 / #20150249020

Semiconductor device with metal carrier and manufacturing method

Semiconductor device including a metal carrier substrate. Above the carrier substrate a first semiconductor layer of alx1gay1inz1n (x1+y1+z1=1, x1≧0, y1≧0, z1≧0) is formed. ... Infineon Technologies Austria Ag

09/03/15 / #20150248151

Communication over identification line

In one example a method includes communicating, by a first device, with a second device via an identification (id) line of a universal serial bus (usb) cable. A first connector of the usb cable may be attached to a usb connector of the first device. ... Infineon Technologies Austria Ag

08/27/15 / #20150244275

Power conversion with delay compensation

In accordance with an embodiment, a method includes driving an electronic switch in a switched-mode power converter in successive drive cycles, wherein driving the switch in each of the drive cycles comprises switching on the electronic for an on-period and subsequently switching off the electronic switch for an off-period. The method further includes establishing the on-period based on a comparison of an on-time signal with an off-threshold, calculating the off-threshold based on an output signal of the switched-mode power converter and a compensation offset, and calculating the compensation offset in one drive cycle based on an estimated delay time, wherein the estimated delay time is calculated based on a measured delay time and an estimated delay time of a previous drive cycle.. ... Infineon Technologies Austria Ag

08/27/15 / #20150244274

System and method for a switched mode power supply

In accordance with an embodiment, a method of controlling a switched-mode power supply includes operating the switched-mode power supply in a first operating mode by monitoring a feedback signal from an output of the power supply using a feedback interface circuit in a first configuration. The method further includes determining when the feedback signal crosses a first threshold in a first direction, and transitioning the switched-mode power from the first operating to a second operating mode by switching the feedback interface circuit from the first configuration to a second configuration.. ... Infineon Technologies Austria Ag

08/27/15 / #20150244273

Valley to valley switching in quasi-resonant mode for driver

Techniques are described to adjust the time when a switch is turned on from the time of one voltage valley to the time of another voltage valley for controlling an average load current or average load voltage. In some examples, the adjustment is instantaneous, and in some examples, the adjustment is gradual. ... Infineon Technologies Austria Ag

08/27/15 / #20150244272

Valley to valley switching in quasi-resonant mode for driver

Techniques are described to adjust the time when a switch is turned on from the time of one voltage valley to the time of another voltage valley for controlling an average load current or average load voltage. In some examples, the adjustment is instantaneous, and in some examples, the adjustment is gradual. ... Infineon Technologies Austria Ag

08/27/15 / #20150244246

Switched-mode power conversion

In accordance with an embodiment, a method of operating a switched-mode power converter includes driving a switching element in successive drive cycles, in which the switching element is driven to switch on for an on-period and subsequently driven to switch off for an off-period; sampling a feedback signal two or more times during the drive cycles, where the feedback signal includes a signal representative of an operation parameter of the switched-mode power converter and noise. The method further includes filtering the sampled feedback signal to extract the signal representative of the operation parameter from the sampled feedback signal and controlling the switching element according to the filtered feedback signal.. ... Infineon Technologies Austria Ag

08/27/15 / #20150243775

Nitride semiconductor device

A semiconductor device is described. In one embodiment, the device includes a group-iii nitride channel layer and a group-iii nitride barrier layer on the group-iii nitride channel layer, wherein the group-iii nitride barrier layer includes a first portion and a second portion, the first portion having a thickness less than the second portion. ... Infineon Technologies Austria Ag

08/27/15 / #20150243645

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.. ... Infineon Technologies Austria Ag

08/27/15 / #20150243592

Method for manufacturing semiconductor devices having a metallisation layer

A method for manufacturing semiconductor devices is disclosed. In one embodiment a semiconductor substrate having a first surface, a second surface opposite to the first surface and a plurality of semiconductor components is provided. ... Infineon Technologies Austria Ag

08/27/15 / #20150242295

Testing using coupling emulation

An apparatus and method associated with testing are disclosed, where a coupling between a device under test and at least one further device may be emulated. The coupling may be a bus.. ... Infineon Technologies Austria Ag

08/20/15 / #20150236598

Switched-mode power conversion

In accordance with an embodiment, a method of operating a switched-mode power converter includes defining at least one of a minimum switching frequency threshold and a maximum switching frequency threshold; detecting valleys occurring in a voltage over the switching element when the switching element is in an off-state; and either in a quasi-resonant mode, switching the switching element on when an nth consecutive valley occurs, n being an integer equal to or greater than one, so that the actual switching frequency is at least one of: below the maximum switching frequency threshold and above the minimum switching frequency threshold, or in a forced switching frequency mode, switching the switching element on so that the actual switching frequency is the maximum or the minimum switching frequency.. . ... Infineon Technologies Austria Ag

08/20/15 / #20150236597

Power conversion with external parameter detection

In accordance with an embodiment, a method includes driving an electronic switch in a switched-mode power converter in successive drive cycles, wherein driving the switch in each of the drive cycles comprises switching on the electronic for an on-period and subsequently switching off the electronic switch for an off-period, and measuring an operation parameter of the switched-mode power converter during the on-periods of the drive cycles, and storing the operation parameter measured in an on-period if a duration of the on-period met a predefined criteria. The method further includes forcing the on-period of a drive cycle to meet the predefined criteria if the operation parameter has not been stored for a predefined number of drive cycles, or for a pre-defined time duration.. ... Infineon Technologies Austria Ag

08/20/15 / #20150236102

Semiconductor wafer structure having si material and iii-n material on the (111) surface of the si material

A semiconductor wafer structure includes a substrate, si material on the substrate, the si material having a thickness of 100 μm or less and a (111) surface facing away from the substrate, and iii-n material on the (111) surface of the si material. The substrate has a coefficient of thermal expansion more closely matched to that of the iii-n material than the si material. ... Infineon Technologies Austria Ag

08/20/15 / #20150233979

Ac detection

A method is suggested comprising the steps: sampling an input signal at a sampling rate, wherein the input signal is based on an ac signal; comparing the input signal with a threshold signal, determining a first value in case the input signal is larger than the threshold signal; determining at least one second value in case the input signal is smaller than the threshold signal; increasing the sampling rate in case a predefined number of consecutive first values is determined; and decreasing the sampling rate in case the at least one second value is determined. Also, respective devices and an according computer program product are provided.. ... Infineon Technologies Austria Ag

08/13/15 / #20150230303

Universal input and wide output function for light emitting diode (led) driver

Techniques are described for controlling an amount of current flowing through one or more light-emitting-diodes (leds), without sensing input and/or output voltage, so that the amount of current flowing through the one or more leds is approximately equal to a target current level. The techniques provide for coarse and fine tuning of the amount of time a transistor, through which the current flows, is turned on to control the amount of current flowing through the one or more leds.. ... Infineon Technologies Austria Ag

08/13/15 / #20150229204

Power factor corrector timing control with efficient power factor and thd

Methods, devices, and integrated circuits are disclosed for controlling switch timing in a power factor correction timing switch. In one example, a device is configured to receive one or more indications of one or more power factor correction circuit parameters. ... Infineon Technologies Austria Ag

08/13/15 / #20150229149

Switched mode power supply circuit

A switched mode power supply circuit includes a switching converter receiving an input voltage and generating an output voltage from the input voltage in accordance with a switching signal. A switching controller unit is configured to generate the switching signal in accordance with a control parameter set such that the output voltage matches a set-point.. ... Infineon Technologies Austria Ag

08/13/15 / #20150228716

Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component

A semiconductor body may include impurities. The impurities may act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body.. ... Infineon Technologies Austria Ag

08/06/15 / #20150221748

Method of manufacturing a multi-channel hemt

A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2degs) and two-dimensional hole gasses (2dhgs) extending in parallel at different depths in the semiconductor heterostructure, the 2degs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2degs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2degs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material.. . ... Infineon Technologies Austria Ag

08/06/15 / #20150221735

Method of forming a trench using epitaxial lateral overgrowth and deep vertical trench structure

In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings. ... Infineon Technologies Austria Ag

08/06/15 / #20150221590

Semiconductor device with self-aligned contact plugs

A semiconductor device includes subsurface structures extending from a main surface into a semiconductor portion, each subsurface structure including a gate electrode dielectrically insulated from the semiconductor portion. The semiconductor device further includes alignment plugs in a vertical projection of the subsurface structures, contact spacers extending along sidewalls of the alignment plugs tilted to the main surface, and contact plugs directly adjoining semiconductor mesas between the subsurface structures. ... Infineon Technologies Austria Ag

07/30/15 / #20150216054

Electronic component, arrangement and method

A method includes applying solder paste to a portion of a circuit board, arranging a first contact pad of a first electronic component adjacent the layer of solder paste, the first electronic component comprising a dielectric layer, at least one semiconductor die embedded in the dielectric layer, the at least one first contact pad being electrically coupled to the semiconductor die and arranged on a lower side of the dielectric layer, and at least one second contact pad positioned on an upper side of the dielectric layer, and melting the solder paste to produce a molten solder that flows onto at least one of the first contact pad and the second contact pad of the first electronic component.. . ... Infineon Technologies Austria Ag

07/30/15 / #20150214352

Enhancement mode device

An enhancement mode device includes a floating gate structure. The floating gate structure includes a first bottom dielectric layer, a second bottom dielectric layer on the first bottom dielectric layer and a conductive floating gate on the second bottom dielectric layer.. ... Infineon Technologies Austria Ag

07/30/15 / #20150214348

Super junction semiconductor device having a compensation structure

A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a lateral direction parallel to a first surface of the semiconductor portion, and a compensation structure covering at least sidewalls of the mesa regions. The compensation structure includes at least two first compensation layers of a first conductivity type, at least two second compensation layers of a complementary second conductivity type, and at least one interdiffusion layer between one of the first and one of the second compensation layers.. ... Infineon Technologies Austria Ag

07/30/15 / #20150214311

Method of manufacturing a semiconductor device having a buried field plate

A method of manufacturing a semiconductor device includes forming a first compound semiconductor material on a semiconductor substrate and forming a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material includes a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2deg). ... Infineon Technologies Austria Ag

07/30/15 / #20150214189

Semiconductor device having multiple contact clips

A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.. ... Infineon Technologies Austria Ag

07/23/15 / #20150207306

Distinguishing between overload and open load in off conditions

Techniques are described for determining whether a switch circuit experienced one of a latched overload condition and an open load with no input voltage condition. In the techniques, a first diagnostic signal is output if the switch circuit experienced the latched overload condition. ... Infineon Technologies Austria Ag

07/23/15 / #20150206975

Fin-type semiconductor device and manufacturing method

One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, the source contact extending along a vertical direction along the source region, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region. ... Infineon Technologies Austria Ag

07/23/15 / #20150206820

Electronic component

An electronic component includes one or more semiconductor dice embedded in a first dielectric layer, means for a spreading heat in directions substantially parallel to a major surface of the one or more semiconductor dice embedded in a second dielectric layer and means for dissipating heat in directions substantially perpendicular to the major surface of the one or more semiconductor dice.. . ... Infineon Technologies Austria Ag

07/16/15 / #20150200178

Connection structure and electronic component

. . A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including pb, and an electrically conductive member arranged on the second layer.. . ... Infineon Technologies Austria Ag

07/16/15 / #20150200148

Semiconductor device and method of manufacturing a semiconductor device

A semiconductor device is provided, wherein the semiconductor device comprises a carrier, wherein the carrier comprises a first portion configured to hold a semiconductor chip; and a second portion configured for mounting the semiconductor device to a support, the second portion further comprising a first feature configured to be connected to the support; and at least one second feature configured to facilitate transfer of heat away from the first portion, wherein the at least one second feature increases a surface area of the second portion.. . ... Infineon Technologies Austria Ag

07/09/15 / #20150195059

Modulator device

Devices, chips and methods are provided which involve the use of either a first modulator path or a second modulator path depending on a level of a signal to be processed.. . ... Infineon Technologies Austria Ag

07/09/15 / #20150194836

Cable compensation by zero-crossing compensation current and resistor

Methods, devices, and circuits are disclosed delivering a first level of output voltage to a rechargeable battery from a battery charger, the rechargeable battery is coupled to the battery charger by a charging cable. The methods, device, and circuits may further be disclosed applying, in response to an indication of an altered output voltage, a compensation current to one or more elements of the battery charger including a zero crossing (zc) pin and a selected resistor, the selected resistor is defined by the charging cable coupling the battery charger to the rechargeable battery, and applying the compensation current to the zc pin and the selected resistor causes an adjustment of the output voltage from the first level of output voltage to a second level of output voltage corresponding to the voltage drop from the impedance of the selected charging cable.. ... Infineon Technologies Austria Ag

07/09/15 / #20150194513

Semiconductor device and method

A semiconductor device includes a first compound semiconductor material including a first doping concentration and a second compound semiconductor material on the first compound semiconductor material, the second compound semiconductor material including a different material than the first compound semiconductor material. The semiconductor device further includes a control electrode and at least one buried semiconductor material region including a second doping concentration different from the first doping concentration. ... Infineon Technologies Austria Ag

07/09/15 / #20150194491

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.. . ... Infineon Technologies Austria Ag

07/09/15 / #20150194377

Chip arrangement and method of manufacturing the same

A chip arrangement is provided which comprises a carrier; and at least two chips arranged over the carrier; wherein a continuous insulating layer is arranged between the at least two chips and between the carrier and at least one of the at least two chips.. . ... Infineon Technologies Austria Ag

07/09/15 / #20150194362

Chip-embedded packages with backside die connection

A semiconductor package includes a semiconductor die and a metal clip. In one embodiment, the semiconductor die is embedded in an insulating material and has a first surface facing in a first direction, a second surface facing in a second direction opposite the first direction and an edge extending between the first and second surfaces. ... Infineon Technologies Austria Ag

07/02/15 / #20150188350

Power storage and supply system

In accordance with an embodiment, a system includes a power supply bus is configured to be coupled to a power source, a first power converter coupled between the power supply bus and a first charge storage device, and a second power converter coupled between the power supply bus and a second charge storage device. In a first operation mode of the system, the first power converter is configured to only operate in one of a charging mode in which it charges the first charge storage device and a discharging mode in which it discharges the first charge storage device, and the second power converter is configured to operate either in a charging mode in which it charges the second charge storage device, or in a discharging mode in which it discharges the second charge storage device.. ... Infineon Technologies Austria Ag

07/02/15 / #20150187875

Semiconductor body with a buried material layer and method

One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one another by semiconductor mesa regions. ... Infineon Technologies Austria Ag

07/02/15 / #20150187874

Field-effect semiconductor device and manufacturing therefor

A power semiconductor device includes a semiconductor body having a first surface and including an active area including n-type semiconductor regions and p-type semiconductor regions, the n-type semiconductor regions alternating, in a direction substantially parallel to the first surface, with the p-type semiconductor regions. The semiconductor body further includes a peripheral area surrounding the active area and including a low-doped semiconductor region having a first concentration of n-dopants lower than a doping concentration of n-dopants of the n-type semiconductor regions, and at least one auxiliary semiconductor region having a concentration of n-dopants higher than the first concentration and a concentration of p-dopants higher than the first concentration.. ... Infineon Technologies Austria Ag

07/02/15 / #20150187761

Method for manufacturing a semiconductor device and a semiconductor device

A semiconductor device is formed by forming: a transistor in a semiconductor substrate having a main surface; a source region and a drain region; and a channel region and a drift zone between the source region and the drain region. The source and drain regions are arranged along a first direction parallel to the main surface. ... Infineon Technologies Austria Ag

06/25/15 / #20150180362

Full-wave rectifier

A full-wave rectifier is disclosed. In one embodiment the full-wave rectifier includes two input paths configured to receive an alternating input voltage, two output paths configured to provide a direct output voltage, and four switched-mode rectifying paths that are connected between each of the input paths and each of the output paths, wherein the switched mode rectifying paths are configured to connect a first input path to a first output path and a second input path to a second output path during a first half wave of the input voltage, and to connect the first input path to the second output path and the second input path to the first output path during a second half wave of the input voltage, and wherein the switched-mode rectifying paths include cascode circuits.. ... Infineon Technologies Austria Ag

06/25/15 / #20150179752

Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device

A semiconductor body has a first surface, a second opposing surface, an edge, an active device region, and an edge termination region. A trench extends from the first surface into the semiconductor body in the edge termination region and includes sidewalls and an insulated electrode. ... Infineon Technologies Austria Ag

06/25/15 / #20150179737

Method for producing a semiconductor device having a beveled edge termination

A method for producing a semiconductor device includes forming a trench that defines a closed loop in a semiconductor body and extends from a first surface into the semiconductor body. The trench has at least one sidewall that is beveled relative to a vertical direction of the semiconductor body. ... Infineon Technologies Austria Ag

06/25/15 / #20150179643

Semiconductor component with transistor

One aspect relates to a semiconductor component with a semiconductor body, a first main contact pad, a second main contact pad, a normally-on first transistor monolithically integrated in the semiconductor body and a normally-off second transistor monolithically integrated in the semiconductor body. The first transistor is a high electron mobility transistor having a first gate electrode and a first load path controllable via a first gate electrode, and the second transistor has a second gate electrode and a second load path controllable via the second gate electrode. ... Infineon Technologies Austria Ag

06/25/15 / #20150179633

Reverse blocking transistor device

A transistor device includes at least one transistor cell. The cell includes a drift region, a source region, a body region arranged between the source region and the drift region, and a drain region. ... Infineon Technologies Austria Ag

06/25/15 / #20150175467

Mold, method for producing a mold, and method for forming a mold article

Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (lpcvd) or using a physical vapor deposition (pvd) process in order to form a pyrolytic carbon film at a surface of a mold.. ... Infineon Technologies Austria Ag

06/18/15 / #20150171748

Switched-mode power converter with split partitioning

A power converter is described that includes components arranged within a first die and a second die of a single package. The first die includes one or more first switches coupled to a switching node of a power stage. ... Infineon Technologies Austria Ag

06/18/15 / #20150171744

Efficient pfm switch control for non-inverting buck-boost converter

Methods, devices, and integrated circuits are disclosed for controlling a buck-boost converter. In one example, a device is configured to compare an output voltage at a voltage output with a low reference voltage and a high reference voltage. ... Infineon Technologies Austria Ag

06/18/15 / #20150171734

Ac/dc converter with clamped boost and buck modes and dc output harmonic control

Methods, devices, and circuits are disclosed for a buck-type ac/dc converter with dc output harmonic control. One example is directed to a ac/dc converter configured to generate a dc output at a target output voltage. ... Infineon Technologies Austria Ag

06/18/15 / #20150171078

Semiconductor device

A semiconductor device incudes a cell region and a contact region, the cell region including a functional unit including a gate electrode, a source and a drain electrode, and the contact region including a gate pad. The gate electrode, the gate pad and the source electrode are disposed on a first main surface of a semiconductor substrate, and the drain electrode is disposed on a second main surface of the semiconductor substrate, the second main surface being opposite to the first main surface. ... Infineon Technologies Austria Ag

06/11/15 / #20150162828

Reconfigurable multiphase power stage for switched mode chargers

Methods, devices, and integrated circuits are disclosed for providing a buck converter charger in a multiphase buck converter topology comprising at least a first phase, a second phase, and an alternative charging switch, wherein the first phase includes a first high-side switch and a first low-side switch and the second phase includes a second high-side switch and a second low-side switch. The methods, devices, and integrated circuits may control at least one phase to operate as a boost converter, control at least one phase to operate as buck converter, and close the alternative charging switch in the multiphase buck converter topology to connect an alternative charging source to a system voltage output, the alternative charging switch coupled to the first phase between the first high-side switch and the first low-side switch.. ... Infineon Technologies Austria Ag

06/11/15 / #20150162827

Power converter calibration method and apparatus

Methods and apparatus for a power regulator according to various aspects of the present invention may comprise a sensor adapted to generate a measurement of a voltage or a current. A memory may store a correction parameter that corresponds to the measurement, and a correction system may be adapted to adjust the measurement according to the correction parameter.. ... Infineon Technologies Austria Ag

06/11/15 / #20150162325

Semiconductor diode

A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor. ... Infineon Technologies Austria Ag

06/11/15 / #20150162324

Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor body

A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal. The half-bridge circuit further includes a high-side drive circuit having a level shifter with a level shifter transistor. ... Infineon Technologies Austria Ag

06/11/15 / #20150162319

Semiconductor device including multiple semiconductor chips and a laminate

A semiconductor device includes a laminate, a first semiconductor chip at least partly embedded in the laminate, a second semiconductor chip mounted on a first main surface of the laminate, and a first electrical contact arranged on the first main surface of the laminate. The second semiconductor chip is electrically coupled to the first electrical contact.. ... Infineon Technologies Austria Ag

06/11/15 / #20150162287

Electronic device

An electronic device includes multiple semiconductor chips in a single housing. Such semiconductor chips may comprise different semiconductor materials, for example they may comprise gan. ... Infineon Technologies Austria Ag

06/04/15 / #20150155380

Manufacturing a semiconductor device using electrochemical etching, semiconductor device and super junction semiconductor device

A trench is formed in a semiconductor substrate between mesas of a first conductivity type. The trench extends from a process surface down to a bottom plane. ... Infineon Technologies Austria Ag

05/28/15 / #20150147856

Semiconductor device and method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body. The method further includes doping a part of the semiconductor body via sidewalls of the trench by plasma doping.. ... Infineon Technologies Austria Ag

05/28/15 / #20150146458

System and method for switched mode power supply

In accordance with an embodiment, a power supply controller includes a current controller configured to control an input current of a power supply. The current controller includes a first feed forward controller having an input configured to be coupled to a first power supply signal, and an output coupled to an output of the current controller. ... Infineon Technologies Austria Ag

05/28/15 / #20150145486

Digital controller for switched mode power converter

In one example, a method includes receiving a voltage value and comparing the voltage value to a reference voltage value to determine a delta voltage value. The method may also include determining a reference current value based on the delta voltage value. ... Infineon Technologies Austria Ag

05/28/15 / #20150145111

Electronic component with electronic chip between redistribution structure and mounting structure

An electronic component which comprises an electrically conductive mounting structure, an electronic chip on the mounting structure, an electrically conductive redistribution structure on the electronic chip, and a periphery connection structure electrically coupled to the redistribution structure and being configured for connecting the electronic component to an electronic periphery, wherein at least one of the electrically conductive mounting structure and the electrically conductive redistribution structure comprises electrically conductive inserts in an electrically insulating matrix.. . ... Infineon Technologies Austria Ag

05/28/15 / #20150145038

Super junction semiconductor device having columnar super junction regions

A super junction semiconductor device includes a semiconductor portion with a first surface and a second surface parallel to the first surface. The semiconductor portion includes a doped layer of a first conductivity type formed at least in a cell area. ... Infineon Technologies Austria Ag

05/28/15 / #20150145030

Semiconductor device and integrated circuit

A semiconductor device in a semiconductor substrate includes a first drain region and a second drain region, a first drift zone and a second drift zone, at least two gate electrodes in the semiconductor substrate, and a channel region between the gate electrodes. The first drift zone is arranged between the channel region and the first drain region, and the second drift zone is arranged between the channel region and the second drain region. ... Infineon Technologies Austria Ag

05/21/15 / #20150137223

Transistor component

A transistor component includes a semiconductor body, a first main electrode, a gate contact electrode, a plurality of transistor cells, and a plurality of gate electrodes. The semiconductor body has a drain region and a drift region of a first conduction type, and a body region of a second conduction type. ... Infineon Technologies Austria Ag

05/21/15 / #20150137222

Stress-reduced field-effect semiconductor device and method for forming therefor

A field-effect semiconductor device is provided. The field-effect semiconductor device includes a semiconductor body with a first surface defining a vertical direction. ... Infineon Technologies Austria Ag

05/21/15 / #20150137177

Semiconductor device having polysilicon plugs with silicide crystallites

A semiconductor device includes a field effect transistor structure having source zones of a first conductivity type and body zones of a second conductivity type which is the opposite of the first conductivity type, the source zones adjoining a first surface of a semiconductor die comprising the source and the body zones. The semiconductor device further includes a dielectric layer adjoining the first surface and polysilicon plugs extending through openings in the dielectric layer and electrically connected to the source and the body zones. ... Infineon Technologies Austria Ag

05/21/15 / #20150137139

Semiconductor device and method for fabricating a semiconductor device

A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. ... Infineon Technologies Austria Ag

05/07/15 / #20150123717

Driving an electronic switch

An electronic switch is connected in series with a load dependent on an input signal. The electronic switch is operated in a first operation mode for a first time period after a signal level of the input signal has changed from an off-level to an on-level. ... Infineon Technologies Austria Ag

05/07/15 / #20150123636

Cuk based current source

Disclosed is a Ćuk based current source, a control circuit for a Ćuk based current source, and a method for providing a current.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150117071

Switched mode power supply including a flyback converter with primary side control

A method and apparatus for controlling a flyback converter are presented. The flyback converter includes a transformer, a semiconductor switch coupled to a primary winding of the transformer, a current measurement circuit coupled to the semiconductor switch, a diode coupled in series to a secondary winding of the transformer, and a controller. ... Infineon Technologies Austria Ag

04/30/15 / #20150116972

Dc-dc converter assembly with an output inductor accommodating a power stage attached to a circuit board

A dc-dc converter assembly includes a board having a first side and a second side opposite the first side, a power stage die of a dc-dc converter attached to the first side of the board, and an output inductor electrically connected to an output of the power stage die and disposed over the power stage die on the first side of the board. The output inductor includes a magnetic core and an electrical conductor having first and second terminals attached to the first side of the board. ... Infineon Technologies Austria Ag

04/30/15 / #20150116031

Semiconductor device and integrated apparatus comprising the same

The present disclosure provides a semiconductor device and an integrated apparatus having the same. The semiconductor device includes a substrate, a buffer layer on the substrate, a compensation area which includes a p-region and a n-region on the buffer layer, and a transistor cell on the compensation area. ... Infineon Technologies Austria Ag

04/30/15 / #20150116025

Switching circuit

In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and a current sense circuit for sensing the current flowing through a current sense path.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150116006

Driving an mos transistor with constant precharging

A drive circuit may be configured to switch on an mos transistor by precharging an input capacitance of the mos transistor with a substantially constant amount of charge in a precharging phase, and charging the input capacitance with a controlled charging current after the precharging phase.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150115415

Inkjet printing on substrates

Methods, apparatuses and devices relate to inkjet printing a covering layer on at least a first side of a substrate in a peripheral region thereof are discussed.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150115396

Insulation structure formed in a semiconductor substrate and method for forming an insulation structure

A method for forming an insulation structure in a semiconductor body includes forming a trench extending from a first surface into a semiconductor body, the trench having a first width in a horizontal direction of the semiconductor body, and forming a void spaced apart from the first surface in a vertical direction of the semiconductor body, the void having a second width in a horizontal direction that is greater than the first width, wherein the trench and the void are arranged adjacent to each other in a vertical direction.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150115391

Semiconductor device having a locally reinforced metallization structure and method for manufacturing thereof

A method for forming a semiconductor device includes providing a semiconductor substrate having a first area and a second area. A first metal layer structure is formed which includes at least a first metal portion in the first area and a second metal portion in the second area. ... Infineon Technologies Austria Ag

04/30/15 / #20150115358

Semiconductor device

The present disclosure provides a semiconductor device, including a compensation area that includes p-regions and n-regions, a plurality of transistor cells including gate electrodes on the compensation area, and one or more interconnections for electrically connecting gate electrodes. The gate electrodes may have a width smaller than ½ of a pitch of the cells.. ... Infineon Technologies Austria Ag

04/30/15 / #20150115355

Superjunction device and semiconductor structure comprising the same

The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. ... Infineon Technologies Austria Ag

04/30/15 / #20150115354

Semiconductor device

The present disclosure provides a semiconductor device, which includes a compensation area which includes p-regions and n-regions, and a plurality of transistor cells on the compensation area. Each of the plurality of transistor cells includes a source region, a body region, a gate and an interlayer dielectric, and a source metallization layer arranged on the interlayer dielectric. ... Infineon Technologies Austria Ag

04/30/15 / #20150115351

Integrated circuit and method of manufacturing an integrated circuit

An integrated circuit includes a power component including a plurality of first trenches in a cell array and a first conductive material in the first trenches electrically coupled to a gate terminal of the power component, and a diode component including a first diode device trench and a second diode device trench disposed adjacent to each other. A second conductive material in the first and the second diode device trenches is electrically coupled to a source terminal of the diode component. ... Infineon Technologies Austria Ag

04/30/15 / #20150115326

Electronic device

In an embodiment, an electronic device includes a semiconductor layer having a surface, a gate and a first current electrode on the surface and a dielectric layer extending between the gate and the first current electrode and including charged ions having a predetermined charge profile.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150115325

Spacer supported lateral channel fet

A semiconductor device includes a semiconductor material and trenches extending into the semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. The device also includes a field plate in the trenches, a body region in the mesas, a source region in contact with the body region in the mesas, and a gate electrode on the first main surface of the semiconductor material and defining a lateral channel region in each of the body regions under the gate electrodes. ... Infineon Technologies Austria Ag

04/30/15 / #20150115324

Switching circuit

In an embodiment, a switching circuit includes input drain, source and gate nodes, a high voltage depletion mode transistor including a current path coupled in series with a current path of a low voltage enhancement mode transistor, and an overheating detection circuit for detecting overheating of the switching circuit.. . ... Infineon Technologies Austria Ag

04/30/15 / #20150115313

Semiconductor device package

In an embodiment, a semiconductor device package includes a bidirectional switch circuit. The bidirectional switch circuit includes a first semiconductor transistor mounted on a first die pad, a second semiconductor transistor mounted on a second die pad, the second die pad being separate from the first die pad, and a conductive connector extending between a source electrode of the first transistor and a source electrode of the second transistor.. ... Infineon Technologies Austria Ag

04/23/15 / #20150108500

Semiconductor device and method of manufacturing the same

A semiconductor device comprises a semiconductor body of a first semiconductor material, wherein at least a part of the semiconductor body constitutes a drift zone of a first conductivity type. The semiconductor device further comprises a channel layer structure comprising a semiconductor heterojunction between first and second semiconductor layers electrically coupled to the drift zone. ... Infineon Technologies Austria Ag

04/16/15 / #20150106543

System and method for processing device with differentiated execution mode

In accordance with an embodiment of the present invention, a method of operating a system includes operating in a first operating mode to not permit access to an address range, receiving a priority interrupt (pi) signal. The method further includes operating in a second operating mode to permit access to the address range in response to receiving the pi signal.. ... Infineon Technologies Austria Ag

04/16/15 / #20150104911

Semiconductor device and method

A semiconductor device is disclosed. One embodiment includes a lateral hemt (high electron mobility transistor) structure with a heterojunction between two differing group iii-nitride semiconductor compounds and a layer arranged on the heterojunction. ... Infineon Technologies Austria Ag

04/09/15 / #20150097544

System and method for controlling a power supply

In accordance with an embodiment, a controller for a switched mode power supply includes an average current comparator that determines whether an average current within the switched mode power supply is below a current threshold, and a switch signal generation circuit coupled to the average current comparator having switch signal outputs configured to be coupled to a switching circuit of the switched mode power supply. The switch signal generation circuit produces a first switching pattern in a first mode of operation and produces a second switching pattern a second mode of operation. ... Infineon Technologies Austria Ag

04/09/15 / #20150097262

Semiconductor diode with trench structures

A semiconductor diode includes a semiconductor body and trench structures extending from a surface of the semiconductor body into the semiconductor body. The semiconductor body includes a doped layer of a first conductivity type and a doped zone of a second conductivity type opposite to the first conductivity type. ... Infineon Technologies Austria Ag

04/09/15 / #20150097234

Half-bridge circuit including a low-side transistor and a level shifter transistor integrated in a common semiconductor body

A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal, and a high-side drive circuit having a level shifter with a level shifter transistor. The low-side transistor and the level shifter transistor are integrated in a common semiconductor body.. ... Infineon Technologies Austria Ag

04/02/15 / #20150092457

Voltage converter

Embodiments of the present invention describe a voltage converter and a method for operating the voltage converter. In one embodiment the voltage converter includes a primary path configured to generate a pulse modulated voltage or current from an input direct current (dc) voltage, a transformer arrangement with m≧1 primary windings and n≧2 secondary windings inductively coupled together, the m primary windings being connected to the primary path, and a secondary path configured to output a pulsed direct current (dc) voltage or current, wherein the secondary path includes n capacitors connected in series and n secondary controllable semiconductor switches, and each of the n secondary windings is connected via at least one of the secondary controllable semiconductor switches to at least one of the capacitors.. ... Infineon Technologies Austria Ag

04/02/15 / #20150092375

Transistor arrangement with semiconductor chips between two substrates

An electronic device comprising a first substrate, a second substrate, a first semiconductor chip comprising a transistor, comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, and a second semiconductor chip comprising a first mounting surface bonded to the first substrate and comprising a second mounting surface bonded to the second substrate, wherein the first semiconductor chip comprises a via electrically coupling a first transistor terminal at its first mounting surface with a second transistor terminal at its second mounting surface.. . ... Infineon Technologies Austria Ag

04/02/15 / #20150091641

Integrated circuit with a power transistor and a driver circuit integrated in a common semiconductor body

An integrated circuit includes a power transistor and a drive circuit. The drive circuit includes at least one drive transistor. ... Infineon Technologies Austria Ag

04/02/15 / #20150091452

Converter circuit arrangement and conversion method

A converter circuit arrangement is provided, including a converter switch controller, a converter switch, a load circuit interface and an inductor. The converter switch controller may include a control input. ... Infineon Technologies Austria Ag

04/02/15 / #20150091176

Electronic component, arrangement and method

An electronic component includes at least one semiconductor device and a redistribution board comprising at least two nonconductive layers and a conductive redistribution structure. The semiconductor device is embedded in the redistribution board and electrically coupled to the redistribution structure and the redistribution board has a side face with a step. ... Infineon Technologies Austria Ag

04/02/15 / #20150091083

Semiconductor device and method of manufacturing a semiconductor device with lateral fet cells and field plates

A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask is provided that covers a first area including first stripe sections of the dielectric stripe structures and first fin sections of the semiconductor fins. ... Infineon Technologies Austria Ag

03/26/15 / #20150087129

Method for producing semiconductor regions including impurities

A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. ... Infineon Technologies Austria Ag

03/26/15 / #20150084669

Power source arrangement and method of diagnosing a power source arrangement

An embodiment method of diagnosing a power source arrangement includes a plurality of n power sources connected in series between output terminals, wherein n≧2. At least two different groups of power sources are selected from the power source arrangement. ... Infineon Technologies Austria Ag

03/26/15 / #20150084121

Transistor device with a field electrode

A transistor device includes a source region, a drift region, and a body region arranged between the source region and the drift region. A gate electrode is adjacent to the body region, and dielectrically insulated from the body region by a gate dielectric. ... Infineon Technologies Austria Ag

03/26/15 / #20150084120

Charge-compensation semiconductor device

An active area of a semiconductor body includes a first charge-compensation structure having spaced apart n-type pillar regions, and an n-type first field-stop region of a semiconductor material in ohmic contact with a drain metallization and the n-type pillar regions and having a doping charge per area higher than a breakdown charge per area of the semiconductor material. A punch-through area of the semiconductor body includes a p-type semiconductor region in ohmic contact with a source metallization, a floating p-type body region and an n-type second field-stop region. ... Infineon Technologies Austria Ag

03/19/15 / #20150078042

Power supply and method

A power supply includes a plurality of electronic components including one or more of a rectifier and a switching transistor, an input port configured to receive electrical energy from a power source and a circuit board comprising a cavity. At least one of the rectifier and the switching transistor is embedded in the cavity. ... Infineon Technologies Austria Ag

03/19/15 / #20150077941

Electronic power device and method of fabricating an electronic power device

An electronic device comprises a power module comprising a first main surface and a second main surface opposite to the first main surface, wherein at least a portion of the first main surface is configured as a heat dissipating surface without electrical power terminal functionality. The electronic device comprises a porous metal layer arranged on the portion of the first main surface.. ... Infineon Technologies Austria Ag

03/19/15 / #20150077161

Circuit including a transformer for driving a semiconductor switching element

A circuit for a semiconductor switching element including a transformer. One embodiment provides a first voltage supply circuit having a first oscillator. ... Infineon Technologies Austria Ag

03/19/15 / #20150077079

Multiphase buck converter with dynamic phase firing

Methods, devices, and circuits are disclosed for a multiphase buck converter with dynamic phase firing that moderates phase output current. In one example, a method includes evaluating a current of a first phase output of the multiphase buck converter. ... Infineon Technologies Austria Ag

03/19/15 / #20150076664

Semiconductor device and method for producing a semiconductor device

One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. ... Infineon Technologies Austria Ag

03/12/15 / #20150069990

Current estimation for a converter

A embodiment relates to a current estimation circuitry for a converter comprising: an integrator for integrating a voltage across an inductor of the converter; a current sense unit for obtaining a signal that is associated with the current flowing through at least one of the electronic switches of the converter; and a control unit for adjusting at least two parameters of the integrator based on comparing the output of the integrator with the signal provided by the current sense unit.. . ... Infineon Technologies Austria Ag

03/05/15 / #20150061619

Switching regulator with increased light load efficiency in pulse frequency modulation mode

A switching regulator includes a multiphase converter which includes a plurality of main phases configured to covert a power supply voltage to a lower voltage for application to an electronic device at different load conditions. The switching regulator also includes an auxiliary phase configured to operate in a pulse frequency modulation mode during a light load condition so that power is supplied to the electronic device by at least the auxiliary phase during the light load condition.. ... Infineon Technologies Austria Ag

03/05/15 / #20150060872

Encapsulated semiconductor device

A semiconductor device includes a carrier and a semiconductor chip disposed over the carrier. The semiconductor chip has a first surface and a second surface opposite to the first surface, wherein the second surface faces the carrier. ... Infineon Technologies Austria Ag

02/26/15 / #20150056794

Method for forming a semiconductor device with an integrated poly-diode

A method for forming a field effect power semiconductor device includes providing a semiconductor body comprising a main horizontal surface and a conductive region arranged next to the main horizontal surface, forming an insulating layer on the main horizontal surface, and etching a narrow trench through the insulating layer so that a portion of the conductive region is exposed, the narrow trench comprising, in a given vertical cross-section, a maximum horizontal extension. The method further includes forming a vertical poly-diode structure comprising a horizontally extending pn-junction. ... Infineon Technologies Austria Ag

02/26/15 / #20150056784

Method for manufacturing a semiconductor device by thermal treatment with hydrogen

A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 μm to 200 μm, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. ... Infineon Technologies Austria Ag

02/26/15 / #20150056782

Method of manufacturing a super junction semiconductor device with overcompensation zones

According to an embodiment, a super junction semiconductor device may be manufactured by introducing impurities of a first impurity type into an exposed surface of a first semiconductor layer of the first impurity type, thus forming an implant layer. A second semiconductor layer of the first impurity type may be provided on the exposed surface and trenches may be etched through the second semiconductor layer into the first semiconductor layer. ... Infineon Technologies Austria Ag

02/26/15 / #20150055258

Driving circuit for an electric motor

In various embodiments a circuit arrangement is provided, having a bridge circuit including at least two switches connected in series; a bridge node which may provide a phase voltage arranged between the at least two switches; an electric motor having at least one phase winding coupled with the bridge node; a decoupling switch; a controller, wherein in an error case the controller may be configured to switch off the at least two switches, to determine whether a predefined condition is satisfied, and to one of delayed switching off the decoupling switch; and switching off the at least two switches and the decoupling switch simultaneously, depending upon whether the predefined condition is satisfied; wherein the controller may determine that the predefined condition is satisfied when the decoupling switch may be switched off without damage from the current applied to it when the at least two switches are switched off.. . ... Infineon Technologies Austria Ag

02/26/15 / #20150054125

Chip, chip arrangement and method for producing a chip

Various embodiments provide a chip. The chip has a carrier, an integrated circuit formed above the carrier, and an energy storage element. ... Infineon Technologies Austria Ag

02/19/15 / #20150048867

High-side semiconductor-switch low-power driving circuit and method

A high-side semiconductor-switch driving method includes generating power for controlling a high side semiconductor switch. The high side semiconductor switch has a control terminal and the power allows a current to flow into the control terminal of the high side semiconductor switch to switch the high side semiconductor switch. ... Infineon Technologies Austria Ag

02/19/15 / #20150048807

Power factor correction circuit and method

A power factor correction (pfc) circuit includes a first inductor, which is operably supplied with an input voltage and an input current. The input voltage is a rectified ac line voltage. ... Infineon Technologies Austria Ag

02/19/15 / #20150048761

Dimming range extension

Representative implementations of devices and techniques provide a dimming arrangement for a variable load, such as a lamp. The dimming arrangement is coupled to a drive circuit for the load and arranged to reduce a drive current associated with the drive circuit, based on a control voltage.. ... Infineon Technologies Austria Ag

02/19/15 / #20150048678

Multi-function pin for light emitting diode (led) driver

Techniques are described for a multi-function pin of a light emitting diode (led) driver. The techniques utilize this multi-function pin for switching current that flows through one or more leds, as well as for charging the power supply of the led driver. ... Infineon Technologies Austria Ag

02/19/15 / #20150048677

Multi-function pin for light emitting diode (led) driver

Techniques are described for a multi-function pin of a light emitting diode (led) driver. The techniques utilize this multi-function pin for switching current that flows through one or more leds, as well as for charging the power supply of the led driver. ... Infineon Technologies Austria Ag

02/19/15 / #20150048445

Semiconductor chip with integrated series resistances

A semiconductor chip has a semiconductor body with a bottom side and a top side arranged distant from the bottom side in a vertical direction, an active and a non-active transistor region, a drift region formed in the semiconductor body, a contact terminal for externally contacting the semiconductor chip, and a plurality of transistor cells formed in the semiconductor body. Each of the transistor cells has a first electrode. ... Infineon Technologies Austria Ag

02/19/15 / #20150048420

Integrated circuit with first and second switching devices, half bridge circuit and method of manufacturing

An integrated circuit includes a first switching device including a first semiconductor region in a first section of a semiconductor portion and a second switching device including a second semiconductor region in a second section of the semiconductor portion. The first and second sections as well as electrode structures of the first and second switching devices outside the semiconductor portion are arranged along a vertical axis perpendicular to a first surface of the semiconductor portion.. ... Infineon Technologies Austria Ag

02/12/15 / #20150043116

High-voltage semiconductor switch and method for switching high voltages

A high voltage semiconductor switch includes a first field-effect transistor having a source, a drain and a gate, and being adapted for switching a voltage at a rated high-voltage level, the first field-effect transistor being a normally-off enhancement-mode transistor, a second field-effect transistor having a source, a drain and a gate, connected in series to the first field-effect transistor, the second field-effect transistor being a normally-on depletion-mode transistor; and a control unit connected to the drain of the first field-effect transistor and to the gate of the second field-effect transistor and being operable for blocking the second field-effect transistor if a drain-source voltage across the first field-effect transistor exceeds the rated high-voltage level.. . ... Infineon Technologies Austria Ag

02/12/15 / #20150042177

Semiconductor device, electronic circuit and method for switching high voltages

Disclosed is a semiconductor device, an electronic circuit, and a method. The semiconductor device includes a semiconductor body; at least one transistor cell including a source region, a drift region, a body region separating the source region from the drift region, and a drain region in the semiconductor body, and a gate electrode dielectrically insulated from the body region by a gate dielectric; a source node connected to the source region and the body region; a contact node spaced apart from the body region and the drain region and electrically connected to the drain region; and a rectifier element formed between the contact node and the source node.. ... Infineon Technologies Austria Ag

02/12/15 / #20150041984

Electronic component and method

An electronic component includes a high-voltage depletion-mode transistor, a low-voltage enhancement-mode transistor arranged adjacent and spaced apart from the high-voltage depletion-mode transistor, and an electrically conductive member electrically coupling a first current electrode of the high-voltage depletion-mode transistor to a first current electrode of the low-voltage enhancement-mode transistor. The electrically conductive member has a sheet-like form.. ... Infineon Technologies Austria Ag

02/12/15 / #20150041965

Power semiconductor device and method

A power semiconductor device includes a semiconductor body having a first side, a second side opposite the first side and an outer rim. The semiconductor body includes an active region, an edge termination region arranged between the active region and the outer rim, a first doping region in the active region and connected to a first electrode arranged on the first side, a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side, a drift region between the first doping region and the second doping region, the drift region including a first portion adjacent to the first side and a second portion arranged between the first portion and the second doping region, and an insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region.. ... Infineon Technologies Austria Ag

02/12/15 / #20150041831

Production of an integrated circuit including electrical contact on sic

Production of an integrated circuit including an electrical contact on sic is disclosed. One embodiment provides for production of an electrical contact on an sic substrate, in which a conductive contact is produced on a boundary surface of the sic substrate by irradiation and absorption of a laser pulse on an sic substrate.. ... Infineon Technologies Austria Ag

02/05/15 / #20150036403

System and method for a power converter

In accordance with a preferred embodiment of the present invention, an inverter circuit includes a direct current (dc)-to-dc power converter configured to receive an input energy from a device via a first input terminal and a second input terminal, where the dc-to-dc power converter is configured to convert a first portion of the input energy to a dc energy. The inverter circuit also includes an inverter stage coupled to an output of the dc-to-dc power converter, and is connected to the first input terminal of the dc-to-dc power converter and the second input terminal of the dc-to-dc power converter, where the inverter stage is configured to convert a second portion of the input energy to a first output energy.. ... Infineon Technologies Austria Ag

02/05/15 / #20150035581

Switch circuit arrangements and method for powering a driver circuit

In various embodiment, a switch circuit arrangement is provided. The switch circuit arrangement may include a switch circuit, a driver circuit and a supply circuit. ... Infineon Technologies Austria Ag

02/05/15 / #20150035048

A supper junction structure includes a thickness of first and second semiconductor regions gradually changed from a transistor area into a termination area

A super junction semiconductor device includes a super junction structure including first and second areas alternately arranged along a first lateral direction and extending in parallel along a second lateral direction. Each one of the first areas includes a first semiconductor region of a first conductivity type. ... Infineon Technologies Austria Ag

02/05/15 / #20150035002

Super junction semiconductor device and manufacturing method

A method for manufacturing a super junction semiconductor device includes forming a trench in an n-doped semiconductor body and forming a first p-doped semiconductor layer lining sidewalls and a bottom side of the trench. The method further includes removing a part of the first p-doped semiconductor layer at the sidewalls and at the bottom side of the trench by electrochemical etching, and filling the trench.. ... Infineon Technologies Austria Ag

02/05/15 / #20150034995

Semiconductor device with combined passive device on chip back side

Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. ... Infineon Technologies Austria Ag

01/29/15 / #20150033035

Apparatus and method for accessing an encrypted memory portion

An apparatus for accessing an encrypted memory portion of a memory is provided. The apparatus includes a plurality of signature generators, wherein each signature generator of the plurality of signature generators is configured to generate a signature of a plurality of signatures depending on an instruction of a plurality of instructions, wherein each of the plurality of instructions is a processor instruction for controlling a processor. ... Infineon Technologies Austria Ag

01/29/15 / #20150029627

Semiconductor device including a control circuit

A semiconductor device includes a semiconductor portion with a main fet and a control circuit. The main fet includes a gate electrode to control a current flow through a body zone between a source zone and a drift zone. ... Infineon Technologies Austria Ag

01/29/15 / #20150028415

Semiconductor component having a transition region

A semiconductor component is disclosed. One embodiment provides a semiconductor component including a semiconductor body having a cell array region with trenches and an edge region with pn junction. ... Infineon Technologies Austria Ag

01/29/15 / #20150028412

Semiconductor device

A semiconductor device is provided that comprises a semiconductor substrate comprising an active area and a peripheral region adjacent the active area and structure positioned in the peripheral region for hindering the diffusion of mobile ions from the peripheral region into the active area.. . ... Infineon Technologies Austria Ag

01/22/15 / #20150026547

Reliable data transmission with reduced bit error rate

A data transmission system includes at least one transmission line. A sender is configured to send data frames to the at least one transmission line and a recipient is configured to receive the data frames from the at least one transmission line. ... Infineon Technologies Austria Ag

01/22/15 / #20150024550

Methods for producing semiconductor devices

A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side facing away from the carrier, to an additional carrier.. . ... Infineon Technologies Austria Ag

01/22/15 / #20150022183

Accessory presence detection

Disclosed is an electronic circuit with a first terminal for connecting an accessory thereto, and with a functionality for detecting the presence of an accessory connected to the first terminal.. . ... Infineon Technologies Austria Ag

01/22/15 / #20150022166

Low-dropout voltage regulator

A low-dropout voltage regulator includes a power transistor configured to receive an input voltage and to provide a regulated output voltage at an output voltage node. The power transistor includes a control electrode configured to receive a driver signal. ... Infineon Technologies Austria Ag

01/22/15 / #20150021670

Charge compensation semiconductor devices

A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. ... Infineon Technologies Austria Ag

01/15/15 / #20150016163

Detector and a voltage converter

A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. ... Infineon Technologies Austria Ag

01/15/15 / #20150016159

Multiphase power converter circuit and method

A multiphase power converter circuit includes at least two single phase power converter circuits. Each single phase power converter circuit includes at least one converter series circuit with a number of converter units. ... Infineon Technologies Austria Ag

01/15/15 / #20150015072

Power converter circuit and method

A power converter circuit includes a converter series circuit that includes a number of converter units. The converter series circuit is configured to output a series circuit output current. ... Infineon Technologies Austria Ag

01/15/15 / #20150015071

Post-regulated flyback converter with variable output stage

A power circuit is described that includes a transformer arranged to store energy. The power circuit further includes a parallel switch device arranged in parallel to a secondary side winding of the transformer.. ... Infineon Technologies Austria Ag

01/15/15 / #20150014858

Semiconductor die and package with source down and sensing configuration

A semiconductor die includes a semiconductor body, a transistor device disposed in the semiconductor body and having a gate, a source and a drain, and a sense device disposed in the semiconductor body and operable to sense a parameter associated with the transistor device. The die further includes a source pad at a first side of the semiconductor body and electrically connected to the source of the transistor device, a drain pad at a second side of the semiconductor body opposing the first side and electrically connected to the drain of the transistor device, and a sense pad at the second side of the semiconductor body and spaced apart from the drain pad. ... Infineon Technologies Austria Ag

01/08/15 / #20150008966

Circuit arrangement and method for generating a drive signal for a transistor

Disclosed is a circuit arrangement for generating a drive signal for a transistor. In one embodiment, the circuit arrangement includes a control circuit that receives a switching signal, a driver circuit that outputs a drive signal, and at least one transmission channel. ... Infineon Technologies Austria Ag

01/08/15 / #20150008748

Power converter circuit, power supply system and method

In accordance with an embodiment, a power converter circuit includes at least one converter series circuit having a plurality of converter units, wherein the at least one converter series circuit is configured to output a series circuit output current. The power converter circuit also includes a synchronization circuit configured to generate at least one synchronization signal. ... Infineon Technologies Austria Ag

01/08/15 / #20150008480

Semiconductor component

A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. ... Infineon Technologies Austria Ag

01/08/15 / #20150008477

Igbt having an emitter region with first and second doping regions

An igbt includes a semiconductor substrate, a source metallization and an emitter metallization. The semiconductor substrate includes a source region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and an emitter region of the second conductivity type. ... Infineon Technologies Austria Ag

01/01/15 / #20150002971

Communication line driver protection circuitry, systems and methods

Embodiments relate to fault detection comparator circuitry and methods that can operate in conjunction with a power-on-reset (por) scheme to put a chip into a reliable power-down mode upon fault detection to avoid disrupting the communication bus link such that other connected chips and the host can continue to operate. Power-on of the affected chip can then be carried out when the connection with that chip is restored.. ... Infineon Technologies Austria Ag

01/01/15 / #20150002112

Multiphase regulator with self-test

A multiphase regulator includes a plurality of output phases, each operable to deliver a phase current through a separate inductor to a load connected to the output phases via the inductors and an output capacitor. The multiphase regulator further includes a controller operable to regulate a voltage delivered to the load by adjusting the phase currents delivered to the load by the output phases, and monitor the phase currents delivered to the load by the output phases. ... Infineon Technologies Austria Ag

01/01/15 / #20150001629

Semiconductor device

A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate. The first and second ridges run in a first direction. ... Infineon Technologies Austria Ag








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