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Infineon Technologies Austria Ag patents (2016 archive)


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Austria Ag-related inventors


Current distribution in dc-dc converters

A dc-dc converter includes a substrate having opposing first and second sides, a power stage attached to the first side of the substrate and having active semiconductor components operable to provide an output phase of the dc-dc converter, an inductor attached to the first side of the substrate and electrically connected to the power stage through a first metal trace at the first side of the substrate, and a plurality of electrically conductive vias extending through the substrate from the first side to the second side. The vias are electrically connected to the first metal trace. ... Infineon Technologies Austria Ag

Electronic device and method of manufacturing the same

Various embodiments provide an electronic device, wherein the electronic device comprises a carrier body; a plurality of pins, a die comprising a switched terminal; wherein the switched terminal is attached onto and electrically connected to one of the plurality of pins; and wherein the die is configured in such a way that the switched terminal is electrically connected to a high electrical potential.. . ... Infineon Technologies Austria Ag

Circuit arrangement with a rectifier circuit

In accordance with an embodiment, a method includes receiving by a drive circuit electrical power from a voltage tap of a first rectifier circuit that includes a load path and a voltage tap, and using the electrical power by the drive circuit to drive a second rectifier circuit that includes a load path. The load path of the first rectifier circuit and the load path of the second rectifier circuit are coupled to a common circuit node.. ... Infineon Technologies Austria Ag

Switched-mode converter with signal transmission from secondary side to primary side

A circuit for a switched-mode power supply is described. According to at least one configuration, the circuit comprises a switched-mode converter having a transformer for dc isolation between a primary side and a secondary side of the switched-mode converter, wherein the switched-mode converter is designed to convert an input voltage supplied to the switched-mode converter into an output voltage as stipulated by a switching signal. ... Infineon Technologies Austria Ag

Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench

A method of forming a semiconductor device is provided. The device includes a semiconductor substrate having a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. ... Infineon Technologies Austria Ag

Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices

Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor, each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors, and one of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device.. ... Infineon Technologies Austria Ag

Method of manufacturing an electronic component

A method of manufacturing an electronic component includes applying solder paste to at least one electrically conductive portion of a package, applying a high-voltage depletion-mode transistor onto the solder paste, applying a low-voltage enhancement-mode transistor onto the solder paste, applying solder paste onto the high-voltage depletion-mode transistor, applying solder paste onto the low-voltage enhancement-mode transistor, applying an electrically conductive member onto the solder paste on the high-voltage depletion-mode transistor and onto the solder paste on the low-voltage enhancement-mode transistor to form an assembly, and heat treating the assembly to produce an electrical connection between the high-voltage depletion-mode transistor and the low-voltage enhancement-mode transistor via the electrically conductive member.. . ... Infineon Technologies Austria Ag

Method for manufacturing a semiconductor device by hydrogen treatment

A method of manufacturing a semiconductor device includes: forming a porous area at a surface of a semiconductor body; forming a semiconductor layer on the porous area by epitaxial growth; forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer, wherein the front surface of the semiconductor layer corresponds to a front side of the semiconductor device; introducing, after forming the semiconductor regions, hydrogen into the porous area by a thermal treatment, wherein the semiconductor layer with the semiconductor regions is separated from the semiconductor body along the porous area; and applying, after separation of the semiconductor layer, rear side processing to the semiconductor layer, wherein a rear side of the semiconductor layer corresponds to a rear side of the semiconductor device.. . ... Infineon Technologies Austria Ag

System and method for a gate driver

In accordance with an embodiment, method of controlling a switching transistor includes applying a first voltage to a first node of a switchable tank circuit, where the first node is coupled to a control node of the switching transistor, the first voltage has a first polarity with respect to a reference terminal of the switching transistor, and the first voltage is configured to place the switching transistor into a first state. After applying the first voltage, the switchable tank circuit is activated, where a voltage of the first node transitions from the first voltage to a second voltage that is configured to place the switching transistor in a second state different from the first state. ... Infineon Technologies Austria Ag

Power converter circuit with ac output and at least one transformer

A power converter circuit includes a synchronization circuit that is configured to generate at least one synchronization signal. A series circuit includes a number of converter units configured to output an output current. ... Infineon Technologies Austria Ag

Semiconductor power package and method of manufacturing the same

A semiconductor power package includes a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing. The semiconductor power package further includes a power semiconductor chip bonded on the electrically conducting chip carrier. ... Infineon Technologies Austria Ag

Discrete power stage transistor dies of a dc-dc converter under an inductor

A dc-dc converter includes a substrate having opposing first and second sides, a first discrete power stage transistor die attached to the first side of the substrate and including a high-side power transistor, and a second discrete power stage transistor die attached to the first side of the substrate and including a low-side power transistor electrically connected to the high-side power transistor to form an output phase of the dc-dc converter. The dc-dc converter further includes an inductor attached to the first side of the substrate so as to electrically connect the output phase to a metal output trace on the substrate. ... Infineon Technologies Austria Ag

Operational gallium nitride devices

A power circuit is described that includes a semiconductor body having a common substrate and a gallium nitride (gan) based substrate. The gan based substrate includes one or more gan devices adjacent to a front side of the common substrate. ... Infineon Technologies Austria Ag

Plasmonic and photonic wavelength separation filters

Plasmonic and photonic wavelength separation structures are provided for guiding plasmonic wave signals and electromagnetic signals, respectively. A separation structure includes an input waveguide configured to guide a first wave signal, an output waveguide configured to guide a second wave signal; and a resonator structure that includes a closed loop pathway and is configured to receive a portion of the first wave signal from the input waveguide by coupling and to provide the second wave signal to the output waveguide based on the portion of the first wave signal by coupling. ... Infineon Technologies Austria Ag

11/24/16 / #20160343850

Vertical transistor with improved robustness

A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. ... Infineon Technologies Austria Ag

11/24/16 / #20160342182

Interim power source system and method

A method for power control includes determining a load power of a load coupled to an output of an isolated ac/dc power supply. The method also includes, when the determined load power is less than a first threshold load power, providing the load power to the load from an interim power source.. ... Infineon Technologies Austria Ag

11/17/16 / #20160336936

Method and circuit for reducing collector-emitter voltage overshoot in an insulated gate bipolar transistor

A circuit for reducing collector-emitter voltage (vce) overshoot in an insulated gate bipolar transistor (igbt) is provided. The circuit includes circuitry operable to generate a pulse which has a rising edge synchronized to the moment when collector or emitter current of the igbt begins to fall during turn-off of the igbt and a width which is a fraction of a duration of the vce overshoot. ... Infineon Technologies Austria Ag

11/17/16 / #20160336272

Semiconductor device having gold metallization structures

A semiconductor device includes a semiconductor substrate having first and second terminals of one or more semiconductor devices, first and second barrier metal regions electrically connected to the first and second terminals, respectively, and first and second gold metallization structures electrically connected to the first and second terminals via the first and second barrier metal regions, respectively. The first and second gold metallization structures contain diffused copper atoms. ... Infineon Technologies Austria Ag

11/10/16 / #20160330831

Power stage packages of a multi-phase dc-dc converter under a coupled inductor

A multi-phase dc-dc converter includes a substrate having opposing first and second sides, a plurality of power stage packages attached to the first side of the substrate, each power stage package including active semiconductor components operable to provide an output phase of the multi-phase dc-dc converter, and a coupled inductor attached to the first side of the substrate and at least partly covering two or more of the power stage packages. The coupled inductor includes separate windings wound on the same core. ... Infineon Technologies Austria Ag

11/10/16 / #20160329883

System and method for a switch transistor driver

In accordance with an embodiment, a method of driving a switching transistor includes receiving an activation signal for the switching transistor and generating a sequence of random values. Upon receipt of the activation signal, a control node of the switching transistor is driven with a drive strength based on a random value of the sequence of random values.. ... Infineon Technologies Austria Ag

11/10/16 / #20160329814

Voltage conversion method and voltage converter

In accordance with an embodiment, a method in a voltage converter includes, in each of successive drive cycles, switching on for an on-period a first electronic switch connected in series with a primary winding of a transformer. Before first electronic switch is switched on, the transformer is pre-magnetized for a pre-magnetizing period, where there is a first delay time between an end of the pre-magnetizing period and a beginning of the on-period.. ... Infineon Technologies Austria Ag

11/10/16 / #20160329398

Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor wafer

A method of manufacturing semiconductor devices in a semiconductor wafer comprises forming charge compensation device structures in the semiconductor wafer. An electric characteristic related to the charge compensation device structures is measured. ... Infineon Technologies Austria Ag

11/03/16 / #20160322491

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes an electrical device and has an output capacitance characteristic with at least one output capacitance maximum located at a voltage larger than 5% of a breakdown voltage of the semiconductor device. The output capacitance maximum is larger than 1.2 times an output capacitance at an output capacitance minimum located at a voltage between the voltage at the output capacitance maximum and 5% of a breakdown voltage of the semiconductor device.. ... Infineon Technologies Austria Ag

11/03/16 / #20160322490

Super-junction semiconductor device comprising junction termination extension structure and method of manufacturing

A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active cell area. An inner part of the junction termination area is arranged between an outer part of the junction termination area and the active cell area. ... Infineon Technologies Austria Ag

11/03/16 / #20160322489

Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions

A semiconductor device includes compensation structures that extend from a first surface into a semiconductor portion. Sections of the semiconductor portion between neighboring ones of the compensation structures form semiconductor mesas. ... Infineon Technologies Austria Ag

10/27/16 / #20160315150

Method and power semiconductor device having an insulating region arranged in an edge termination region

A power semiconductor device includes a semiconductor body having first and second opposing sides and an edge termination region arranged between an active region and an outer rim. The semiconductor body further includes a first doping region in the active region and connected to a first electrode arranged on the first side of the semiconductor body, a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side of the semiconductor body, a drift region between the first doping region and the second doping region, the drift region comprising a first portion adjacent to the first side of the semiconductor body and a second portion arranged between the first portion and the second doping region, and an insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region.. ... Infineon Technologies Austria Ag

10/27/16 / #20160315033

Device including a logic semiconductor chip having a contact electrode for clip bonding

A device includes a logic semiconductor chip having a contact electrode. The contact electrode is configured to be electrically coupled to a contact clip based on a clip bonding technique.. ... Infineon Technologies Austria Ag

10/27/16 / #20160313402

Switch device

According to an embodiment of a switch device, the switch device includes a first switch, a second switch and an evaluation circuit. The evaluation circuit is configured to evaluate a temporal behavior of a node between the first switch and the second switch to detect a possible fault condition of at least one of the first switch or the second switch. ... Infineon Technologies Austria Ag

10/20/16 / #20160308383

Cable compensation by zero-crossing compensation current and resistor

Methods, devices, and circuits are disclosed delivering a first level of output voltage to a rechargeable battery from a battery charger, the rechargeable battery is coupled to the battery charger by a charging cable. The methods, device, and circuits may further be disclosed applying, in response to an indication of an altered output voltage, a compensation current to one or more elements of the battery charger including a zero crossing (zc) pin and a selected resistor, the selected resistor is defined by the charging cable coupling the battery charger to the rechargeable battery, and applying the compensation current to the zc pin and the selected resistor causes an adjustment of the output voltage from the first level of output voltage to a second level of output voltage corresponding to the voltage drop from the impedance of the selected charging cable.. ... Infineon Technologies Austria Ag

10/20/16 / #20160308028

Method of forming a trench using epitaxial lateral overgrowth

In one aspect, a method of forming a trench in a semiconductor material includes forming a first dielectric layer on a semiconductor substrate. The first dielectric layer includes first openings. ... Infineon Technologies Austria Ag

10/20/16 / #20160307792

Method for manufacturing a semiconductor substrate

A method for manufacturing a semiconductor substrate includes providing a first wafer having a first surface and a second surface opposite the first surface, forming cavities in the first wafer at a first distance from the first surface, wherein the cavities, when seen in a cross-section perpendicular to the first surface, are laterally spaced from each other by partition walls formed by the semiconductor material of the first wafer, the cavities forming a separation region, bonding a second wafer on the first surface of the first wafer, breaking the partition walls by applying mechanical impact to the partition walls to split the first wafer along the separation region so that a residual wafer remains attached to the second wafer, and depositing an epitaxial layer on the residual wafer.. . ... Infineon Technologies Austria Ag

10/13/16 / #20160300914

Method for forming a stress-reduced field-effect semiconductor device

A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining an active area, forming a vertical trench from the first surface into the semiconductor body, forming a field dielectric layer at least on a side wall and a bottom wall of the vertical trench, depositing a conductive layer on the field dielectric layer, forming a closed cavity on the conductive layer in the vertical trench, and forming an insulated gate electrode on the closed cavity in the vertical trench.. . ... Infineon Technologies Austria Ag

10/13/16 / #20160300913

Field plate trench semiconductor device with planar gate

A semiconductor device includes first and second load contacts and a semiconductor region extending along an extension direction. A surface region is arranged above and coupled to the semiconductor region. ... Infineon Technologies Austria Ag

10/13/16 / #20160300905

Semiconductor device including a superjunction structure with drift regions and compensation structures

A vertical semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, a first trench including a dielectric, a gate electrode and a field electrode, the first trench extending into the semiconductor body from the first surface, and a superjunction structure in the semiconductor body. The superjunction structure includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface.. ... Infineon Technologies Austria Ag

10/06/16 / #20160295673

Single isolation element for multiple interface standards

In one example, a device includes a transformer configured to electrically isolate one or more components of the device from a communication bus, and a controller configured to receive and transmit data via the communication bus, wherein the controller is operable to communicate via a plurality of communication standards that include at least one analog unidirectional communication standard and at least one digital bidirectional communication standard, and wherein both the received data and the transmitted data pass through the transformer.. . ... Infineon Technologies Austria Ag

10/06/16 / #20160294282

System and method for a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power converter includes measuring an input voltage of the switched-mode power converter; determining an on-time of a switch of the switched-mode power converter; determining an off-time of the switch of the switched-mode power converter; and determining an output voltage of the switched-mode power converter based on the measured input voltage, the determined on-time and the determined off-time. The output voltage includes a voltage at a first node having a dc path to a load path of the switch.. ... Infineon Technologies Austria Ag

10/06/16 / #20160293751

Semiconductor device with gate fins

A semiconductor device includes gate fins extending from a first surface into a semiconductor portion. The gate fins include gate electrodes and are arranged along element lines, wherein longitudinal axes of the gate fins are parallel to the element lines. ... Infineon Technologies Austria Ag

10/06/16 / #20160293714

Semiconductor device comprising planar gate and trench field electrode structure

An embodiment of a semiconductor device includes a transistor cell array having transistor cells in a semiconductor body. A planar gate structure is on the semiconductor body at a first side. ... Infineon Technologies Austria Ag

10/06/16 / #20160293597

Integrated semiconductor device

A semiconductor device includes a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device and the second semiconductor device are integrated to form a half-bridge. ... Infineon Technologies Austria Ag

10/06/16 / #20160293549

Compound semiconductor device including a sensing lead

A device includes a compound semiconductor chip having a control electrode, a first load electrode and a second load electrode. A first lead is electrically coupled to the control electrode, a second lead is electrically coupled to the first load electrode, and a third lead is electrically coupled to the first load electrode. ... Infineon Technologies Austria Ag

10/06/16 / #20160293543

Compound semiconductor device including a multilevel carrier

A device includes a carrier having a first carrier section on a first level and a second carrier section on a second level different from the first level. The device further includes a compound semiconductor chip arranged over the first carrier section and a control semiconductor chip arranged over the second carrier section. ... Infineon Technologies Austria Ag

10/06/16 / #20160293528

Semiconductor devices including control and load leads of opposite directions

A device includes a carrier and a semiconductor chip arranged over a surface of the carrier. The semiconductor chip includes a control electrode and a load electrode. ... Infineon Technologies Austria Ag

10/06/16 / #20160291682

System and method for a switched-mode power supply

In accordance with an embodiment, a switched-mode power converter includes a switch, a freewheeling diode coupled between an output terminal of the switch and a power supply input node, an inductor coupled between the output terminal of the switch and a power supply output node, and a passive network having a first terminal coupled to the output terminal of the switch, a second terminal coupled to a power supply output node, and a third terminal coupled to a reference terminal of the switch. A method includes measuring a first voltage at a fourth terminal of the passive network when the switch is on; measuring a second voltage at the fourth terminal of the passive network when the switch is off; and estimating an output voltage between the power supply output node and the reference terminal of the switch based on the first voltage and the second voltage.. ... Infineon Technologies Austria Ag

10/06/16 / #20160291631

Switching voltage regulator input voltage and current sensing

A voltage regulator includes a power stage configured to produce an output voltage from an input voltage at an input voltage terminal, a shunt resistor connected in series between the input voltage terminal and the power stage, a first level shifting resistor connected in series between a first terminal of the shunt resistor and a first sense pin of the controller, and a second level shifting resistor connected in series between a second terminal of the shunt resistor and a second sense pin of the controller. The input current of the regulator is sensed as a function of the voltage across the shunt resistor, as shifted down by the level shifting resistors and measured across the sense pins. ... Infineon Technologies Austria Ag

09/22/16 / #20160276452

Method for manufacturing a semiconductor device having a schottky contact

A semiconductor device includes an n-doped monocrystalline semiconductor substrate having a substrate surface, an amorphous n-doped semiconductor surface layer at the substrate surface of the n-doped monocrystalline semiconductor substrate, and a schottky-junction forming material in contact with the amorphous n-doped semiconductor surface layer. The schottky-junction forming material forms at least one schottky contact with the amorphous n-doped semiconductor surface layer.. ... Infineon Technologies Austria Ag

09/22/16 / #20160276233

System and method for dual-region singulation

A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. ... Infineon Technologies Austria Ag

09/15/16 / #20160268898

Method for operating a power converter circuit and power converter circuit

In accordance with an embodiment, a method includes converting power by a power converter circuit having a plurality of converter cells coupled to a supply circuit. Converting the power includes a plurality of successive activation sequences and, in each activation sequence, activating at least some of the plurality of converter cells at an activation frequency. ... Infineon Technologies Austria Ag

09/15/16 / #20160268425

Semiconductor device having a fin at a side of a semiconductor body

One embodiment of a semiconductor device includes a fin at a first side of a semiconductor body, a body region of a second conductivity type in at least a part of the fin, a drain extension region of a first conductivity type, a source region and a drain region of the first conductivity type, a source contact in contact with the source region, and a gate structure adjoining opposing walls of the fin. The source contact extends along a vertical direction along the source region. ... Infineon Technologies Austria Ag

09/15/16 / #20160268386

Field effect power transistor metalization having a comb structure with contact fingers

A metalization of a field effect power transistor having lateral semiconductor layers on an insulator substrate or an intrinsically conducting or doped semiconductor substrate is provided. A metalization of source electrode contact areas, a metalization of drain electrode contact areas and a metalization of gate electrode contact areas are on a semiconductor surface of the semiconductor layers and have a plurality of metalization layers, between which insulation layers are arranged in a lateral direction. ... Infineon Technologies Austria Ag

09/15/16 / #20160268370

Super junction semiconductor device having columnar super junction regions and electrode structures

A super junction semiconductor device includes a semiconductor portion with first and second surfaces parallel to one another and including a doped layer of a first conductivity type formed at least in a cell area. Columnar first super junction regions of a second conductivity type extend in a direction perpendicular to the first surface and are separated by columnar second super junction regions of the first conductivity type. ... Infineon Technologies Austria Ag

09/08/16 / #20160261266

Electronic circuit

In accordance with an embodiment, a method includes driving a transistor device by a driver having an output coupled to a control node of the transistor through a capacitor and limiting a magnitude of a voltage of one polarity between the control node and a first load node of the transistor device by a rectifier circuit.. . ... Infineon Technologies Austria Ag

09/08/16 / #20160261205

Multi-cell power conversion method with failure detection and multi-cell power converter

A power converter includes a plurality of first converter cells, a plurality of second converter cells, and a plurality of dc link capacitors. Each dc link capacitor links one of the plurality of first converter cells and one of the plurality of second converter cells. ... Infineon Technologies Austria Ag

09/08/16 / #20160260817

Surface treatment of semiconductor substrate using free radical state fluorine particles

A substrate having a buffer layer and a barrier layer is formed. The buffer and barrier layers have different bandgaps such that an electrically conductive channel comprising a two-dimensional charge carrier gas arises at an interface between the buffer and barrier layers due to piezoelectric effects. ... Infineon Technologies Austria Ag

09/08/16 / #20160260809

Semiconductor device with first and second field electrode structures

A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field electrode structures include a first field dielectric insulating spicular first field electrodes against the semiconductor portion. ... Infineon Technologies Austria Ag

09/08/16 / #20160260699

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.. ... Infineon Technologies Austria Ag

09/01/16 / #20160254810

Electronic drive circuit

An electronic circuit includes an input configured to receive an input signal and an output configured to be coupled to load, an output transistor including a load path and a control node, the load path being connected between the output and a first supply node, a drive transistor including a load path and a control node, the load path being connected to the control node of the output transistor, a first electronic switch connected in series with the load path of the drive transistor, a biasing circuit including an internal impedance and connected between the control node of the drive transistor and the first supply node, and a control circuit configured to receive the input signal and to drive the first electronic switch based on the input signal.. . ... Infineon Technologies Austria Ag

09/01/16 / #20160254755

Magnetizing current based control of resonant converters

A resonant converter is described that includes at least one power switch. The at least one power switch is characterized by a non-linearity coefficient that is less than or equal to a first threshold and a figure-of-merit that is less than or equal to a second threshold. ... Infineon Technologies Austria Ag

09/01/16 / #20160254367

Electrode-aligned selective epitaxy method for vertical power devices

A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first dielectric layer and forming an opening which extends through the second layer and the first dielectric layer to the semiconductor substrate such that part of the semiconductor substrate is uncovered. The method further comprises forming an epitaxial layer on the uncovered part of the semiconductor substrate, removing the second layer after forming the epitaxial layer and filling an open space formed by removing the second layer with an electrically conductive material. ... Infineon Technologies Austria Ag

08/25/16 / #20160248422

Switching circuit, semiconductor switching arrangement and method

In an embodiment, a switching circuit includes a high voltage depletion mode transistor having a first leakage current and operatively connected in a cascode arrangement to a low voltage enhancement mode transistor having a second leakage current. The second leakage current is larger than the first leakage current.. ... Infineon Technologies Austria Ag

08/25/16 / #20160248340

Circuit arrangement with a rectifier circuit

In accordance with an embodiment, a method includes receiving by a drive circuit electrical power from a voltage tap of a first rectifier circuit that includes a load path and a voltage tap, and using the electrical power by the drive circuit to drive a second rectifier circuit that includes a load path. The load path of the first rectifier circuit and the load path of the second rectifier circuit are coupled to a common circuit node.. ... Infineon Technologies Austria Ag

08/25/16 / #20160248264

Driver controller with ac-adapted and dc-adapted control modes

Methods, devices, and integrated circuits are disclosed for a driver controller that determines whether an input is ac or dc and controls a driver in either an ac-adapted control mode or a dc-adapted control mode. An example method includes detecting whether an input is primarily ac or dc. ... Infineon Technologies Austria Ag

08/25/16 / #20160247905

Group iii-nitride-based enhancement mode transistor having a multi-heterojunction fin structure

A group iii-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a first p-type group iii-nitride layer, and a second side face of the multi-heterojunction fin structure is covered by a second p-type group iii-nitride layer.. ... Infineon Technologies Austria Ag

08/25/16 / #20160247794

Compound semiconductor transistor with gate overvoltage protection

A transistor device includes a compound semiconductor body, a drain disposed in the compound semiconductor body and a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region. A gate is provided for controlling the channel region. ... Infineon Technologies Austria Ag

08/18/16 / #20160240645

Semiconductor device

In an embodiment, a semiconductor device includes a substrate, a group iii nitride-based semiconductor layer formed on the substrate, a first current electrode and a second current electrode formed on the group iii nitride-based semiconductor layer and spaced from each other, and a control electrode formed on the group iii nitride-based semiconductor layer between the first current electrode and the second current electrode. The control electrode includes at least a middle portion, configured to switch off a channel below the middle portion when a first voltage is applied to the control electrode, and second portions adjoining the middle portion. ... Infineon Technologies Austria Ag

08/18/16 / #20160240621

Insulating block in a semiconductor trench

A semiconductor device is produced by: creating an opening in a mask formed on a semiconductor body; creating, underneath the opening, a trench in the semiconductor body which has a side wall and a trench bottom; creating, while the mask is on the semiconductor body, an insulating layer covering the trench bottom and the side wall; depositing a spacer layer including a first electrode material on the insulating layer; removing the spacer layer from at least a portion of the insulating layer that covers the trench bottom; filling at least a portion of the trench with an insulating material; removing the part of the insulating material laterally confined by the spacer layer so as to leave an insulating block in the trench; and filling at least a portion of the trench with a second electrode material so as to form an electrode within the trench.. . ... Infineon Technologies Austria Ag

08/18/16 / #20160240615

Semiconductor device and a method for forming a semiconductor device

A semiconductor device comprises at least one strip-shaped cell compensation region of a vertical electrical element arrangement, at least one strip-shaped edge compensation region and a bridge structure. The at least one strip-shaped cell compensation regions extends into a semiconductor substrate and comprises a first conductivity type. ... Infineon Technologies Austria Ag

08/11/16 / #20160233775

System and method for secondary-side power regulation

It is possible to achieve more precise power regulation in switched mode power supply systems by performing at least some control-loop processing on the secondary-side of the transformer. In particular, a secondary-side measurement is processed at least partially by a secondary-side controller to obtain a switching indication signal. ... Infineon Technologies Austria Ag

08/11/16 / #20160233766

Multi-phase switching voltage regulator having asymmetric phase inductance

A multi-phase switching voltage regulator includes a controller and a plurality of power stages each configured to deliver output current to a load through an inductor. At least one of the inductors has a higher open circuit inductance than the other inductors so that at least one of the power stages has a different output inductance compared to the other power stages. ... Infineon Technologies Austria Ag

08/11/16 / #20160233331

Power mosfet semiconductor

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. ... Infineon Technologies Austria Ag

08/11/16 / #20160233316

Method of manufacturing a spacer supported lateral channel fet

A semiconductor device is manufactured by forming a plurality of trenches extending into a semiconductor material from a first main surface of the semiconductor material to form mesas of semiconductor material between the trenches. A trench fill material is disposed in the trenches, the trench fill material extending above the first main surface of the semiconductor material. ... Infineon Technologies Austria Ag

08/11/16 / #20160233149

Semiconductor chip package having contact pins at short side edges

A semiconductor chip package includes a semiconductor chip, an encapsulation body encapsulating the semiconductor chip, a chip pad, and electrical contact elements connected with the semiconductor chip and extending outwardly. The encapsulation body has six side faces and the electrical contact elements extend exclusively through two opposing side faces which have the smallest surface areas from all the side faces. ... Infineon Technologies Austria Ag

08/04/16 / #20160226389

Self supply for synchronous rectifiers

A power converter with an isolated topology may include a primary side and a secondary side. The secondary side includes a self-powered synchronous rectifier. ... Infineon Technologies Austria Ag

08/04/16 / #20160226387

Voltage converter with soft communication networks

Embodiments of the present invention describe a voltage converter and a method for operating the voltage converter. In one embodiment the voltage converter includes a primary path configured to generate a pulse modulated voltage or current from an input direct current (dc) voltage, a transformer arrangement with m≧1 primary windings and n≧2 secondary windings inductively coupled together, the m primary windings being connected to the primary path, and a secondary path configured to output a pulsed direct current (dc) voltage or current, wherein the secondary path includes n capacitors connected in series and n secondary controllable semiconductor switches, and each of the n secondary windings is connected via at least one of the secondary controllable semiconductor switches to at least one of the capacitors.. ... Infineon Technologies Austria Ag

08/04/16 / #20160225893

Superjunction device and semiconductor structure comprising the same

The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. ... Infineon Technologies Austria Ag

08/04/16 / #20160225884

Semiconductor component with a space saving edge structure

A semiconductor component is disclosed. One embodiment includes a semiconductor body including a first semiconductor layer having at least one active component zone, a cell array with a plurality of trenches, and at least one cell array edge zone. ... Infineon Technologies Austria Ag

08/04/16 / #20160225864

Semiconductor device and method

In an embodiment, a semiconductor device includes a high electron mobility transistor (hemt) including a floating gate. The floating gate includes two or more electrically separated floating gate segments.. ... Infineon Technologies Austria Ag

08/04/16 / #20160225717

Electronic component

In an embodiment, an electronic component includes a dielectric layer having a first surface and a second surface, one or more semiconductor dies embedded in the dielectric layer and at least one electrically conductive member. The electrically conductive member includes a first portion and a second portion. ... Infineon Technologies Austria Ag

07/28/16 / #20160218209

High voltage transistor operable with a high gate voltage

A semiconductor device includes a first load contact, a second load contact and a semiconductor region positioned between the first and second load contacts. The semiconductor region includes: a first semiconductor contact zone in contact with the first load contact; a second semiconductor contact zone in contact with the second load contact; a first conductivity type semiconductor drift zone between the first and second semiconductor contact zones, wherein the semiconductor drift zone couples the first semiconductor contact zone to the second semiconductor contact zone. ... Infineon Technologies Austria Ag

07/28/16 / #20160218174

Semiconductor device with a super junction structure and a field extension zone

A super junction semiconductor device includes an impurity layer of a first (conductivity) type formed in a semiconductor portion having first and second parallel surfaces, a super junction structure between the first surface and impurity layer and including first columns of the first type and second columns of a second (conductivity) type, a body zone of the second type formed between the first surface and one of the second columns at least partially in the vertical projection of the second columns, and a field extension zone of the second type electrically connected to the body zone and arranged in the vertical projection of one of the columns. An area impurity density in the field extension zone is between 1×1012 and 5×1012 cm−2. ... Infineon Technologies Austria Ag

07/28/16 / #20160218002

Controlling the reflow behaviour of bpsg films and devices made thereof

A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the silicon source is a first ratio. ... Infineon Technologies Austria Ag

07/21/16 / #20160211857

Analog to digital converter circuits and methods of operation thereof

An analog to digital converter (adc) circuit includes an input stage for supplying an input signal to an adc for conversion to a digital signal and a control unit of the adc. The adc circuit further includes an operational parameter setting device configured to receive an operational parameter setting signal indicative of an operating parameter for the input stage from the control unit. ... Infineon Technologies Austria Ag

07/21/16 / #20160211757

Reducing switching losses associated with a synchronous rectification mosfet

A synchronous rectifier is described that includes a transistor device that has a gate terminal, a source terminal, a drain terminal, and a field-plate electrode. The field-plate electrode of the transistor device includes an integrated diode. ... Infineon Technologies Austria Ag

07/21/16 / #20160209855

Protection from hard commutation events at power switches

A driver of a power switch is described that is used to supply power to a load for at least a switching cycle of the power switch. The driver includes at least one output that contains a high-ohmic output and a low-ohmic output. ... Infineon Technologies Austria Ag

07/21/16 / #20160209853

Protection from hard commutation events at power switches

A system is described that includes a half-bridge, a first driver, a second driver, and a controller unit. The half-bridge includes a first switch coupled to a second switch at a switching node. ... Infineon Technologies Austria Ag

07/14/16 / #20160204884

Data integrity via galvanically isolated analog-to-digital converter for industrial systems

Devices, systems, and methods for verifying integrity of a signal path across an isolation barrier are discloses. The devices, systems, and methods insert a marker signal into the signal path across the isolation barrier. ... Infineon Technologies Austria Ag

07/14/16 / #20160204210

Semiconductor device having field plate structures and gate electrode structures between the field plate structures

A semiconductor device includes a field effect transistor in a semiconductor substrate having a first surface. The field effect transistor includes a first field plate structure and a second field plate structure, each extending in a first direction parallel to the first surface, and gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the gate electrode structures being disposed between the first and the second field plate structures.. ... Infineon Technologies Austria Ag

07/14/16 / #20160204017

Embrittlement device, pick-up system and method of picking up chips

Various embodiments provide a method of picking up a chip from a carrier system, wherein the method comprises providing a carrier system comprising a plurality of chips comprising edge portions and being attached to a one surface of the carrier system by an adhesive layer; embrittling the adhesive layer selectively at the edge portions of the plurality of chips; and picking up at least one chip of the plurality of chips.. . ... Infineon Technologies Austria Ag

07/14/16 / #20160203979

Metal deposition on substrates

Various techniques, methods, devices and apparatus are provided where an isolation layer is provided at a peripheral region of the substrate, and one or more metal layers are deposited onto the substrate.. . ... Infineon Technologies Austria Ag

07/07/16 / #20160197152

Semiconductor component and method for producing it

A semiconductor component having differently structured cell regions, and a method for producing it. For this purpose, the semiconductor component includes a semiconductor body. ... Infineon Technologies Austria Ag

07/07/16 / #20160197142

Method for manufacturing a semiconductor device

A wafer includes a semiconductor layer having a concentration of n-dopants. A first mask is formed on the wafer and has first openings in an active area of a semiconductor device and at least one second opening in a peripheral area of the device. ... Infineon Technologies Austria Ag

07/07/16 / #20160197141

Compensation devices

Methods, apparatuses and devices related to the manufacturing of compensation devices are provided. In some cases, an n/p-codoped layer is deposited for calibration purposes to minimize a net doping concentration. ... Infineon Technologies Austria Ag

06/16/16 / #20160169945

System and method for contact measurement circuit

According to an embodiment, a contact measurement circuit is configured to be coupled between a first contact and a second contact, and the contact measurement circuit includes a first transistor, a control capacitor, and a voltage measurement unit. The first transistor includes a first conduction terminal configured to be coupled to the first contact, a second conduction terminal, and a first control terminal. ... Infineon Technologies Austria Ag

06/09/16 / #20160165715

Device including a printed circuit board and a metal workpiece

A device including a first semiconductor package that includes a semiconductor chip, an encapsulation material at least partly covering the semiconductor chip, and a contact element electrically coupled to the semiconductor chip and protruding out of the encapsulation material. In addition, the device includes a printed circuit board (pcb), wherein the first semiconductor package is mounted on the pcb and the contact element of the first semiconductor package is electrically coupled to the pcb. ... Infineon Technologies Austria Ag

06/09/16 / #20160164134

Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit

A lithium battery includes a cathode, an anode integrally formed within a silicon substrate, wherein a surface portion of the silicon substrate is patterned to form a plurality of sub-structures, and an electrolyte.. . ... Infineon Technologies Austria Ag

06/02/16 / #20160155834

Iii-nitride device having a buried insulating region

A semiconductor device includes a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having a channel region, a source region, a drain region spaced apart from the source region, the channel region extending between the source region and the drain region, and an insulating region positioned under the channel region in an active region of the semiconductor device so that the insulating region is separated from the channel region by a portion of the compound semiconductor material in the active region. The active region includes the source, the drain and the channel region. ... Infineon Technologies Austria Ag

06/02/16 / #20160155821

Methods for producing a vertical semiconductor and a trench gate field effect semiconductor device

A method of forming a vertical semiconductor includes providing a substrate, etching a trench for a gate electrode, providing a body contact region, providing a channel region located between the trench and the body contact region, applying a doping to implant a dopant into walls of the trench, and diffusing the dopant from the trench walls into the channel region in order to produce a laterally varying doping concentration in the channel region. A method of forming a trench gate field effect semiconductor device includes providing a semiconductor body comprising a main horizontal surface, forming a body contact region, forming a trench in the main horizontal surface, forming a gate oxide layer in the trench, applying a plasma doping to the semiconductor body in order to implant a dopant into trench walls, heating the semiconductor body, and filling the trench with a conductive material.. ... Infineon Technologies Austria Ag

06/02/16 / #20160155802

Semiconductor device having ridges running in different directions

A semiconductor device includes a first ridge and a second ridge extending from a first main surface of a semiconductor substrate, the first and second ridges running in a first direction. A body region is disposed in a portion of the semiconductor substrate between the first ridge and the second ridge, the first and second ridges being connected with the body region. ... Infineon Technologies Austria Ag

06/02/16 / #20160155796

Semiconductor device having a positive temperature coefficient structure

A semiconductor device includes a first load terminal at a first surface of a semiconductor body and a second load terminal at the opposing surface. An active device area is surrounded by an edge termination area. ... Infineon Technologies Austria Ag

05/26/16 / #20160149511

Driver controller with internally calculated average output current

Methods, devices, and integrated circuits are disclosed for a driver controller that internally calculates average output current. In one example, a method includes receiving an output voltage of an output line. ... Infineon Technologies Austria Ag

05/26/16 / #20160149489

Switching voltage regulator input power estimation

An estimate of voltage regulator input power is provide by estimating output power of the voltage regulator based on output voltage and output current of the voltage regulator, estimating power loss of the voltage regulator and estimating input power of the voltage regulator based on the estimated output power and the estimated power loss.. . ... Infineon Technologies Austria Ag

05/26/16 / #20160149028

Semiconductor device with charge compensation region underneath gate trench

A semiconductor substrate has a main surface and a rear surface vertically spaced apart from the main surface, a first doped region, a second doped region and a third doped region. The third doped region is interposed between the first and second doped regions beneath the main surface. ... Infineon Technologies Austria Ag

05/19/16 / #20160141964

System and method for a switched-mode power supply

In accordance with an embodiment, a method of operating a power supply includes detecting a loss of at least one of an ac input voltage an ac input power at an input of the power supply, and increasing a switching frequency of the power supply upon detection of the loss of the ac input voltage or ac input power.. . ... Infineon Technologies Austria Ag

05/19/16 / #20160141952

Digital power factor correction

A circuitry for providing a power factor correction is suggested. The circuitry includes a digital pulse width modulator, a switching element, a control unit, and a combiner. ... Infineon Technologies Austria Ag

05/19/16 / #20160141951

System and method for a startup cell circuit

According to an embodiment, a circuit comprising includes a first switching circuit coupled to a power supply input, a second switching circuit coupled to an output of the first switching circuit, a supply capacitor coupled to the second switching circuit, and a startup cell coupled to the power supply input and the supply capacitor. The startup cell is configured to electrically couple the power supply input to the supply capacitor when the second switching circuit is not actively switching. ... Infineon Technologies Austria Ag

05/19/16 / #20160141405

Semiconductor field plate for compound semiconductor devices

A transistor includes a source, a drain spaced apart from the source, and a heterostructure body having a two-dimensional charge carrier gas channel for connecting the source and the drain. The transistor further includes a semiconductor field plate disposed between the source and the drain. ... Infineon Technologies Austria Ag

05/19/16 / #20160141380

Method for manufacturing a semiconductor device, and semiconductor device

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a main surface and a gate electrode which is within a trench between neighboring semiconductor mesas. The gate electrode is electrically insulated from the neighboring semiconductor mesas by respective dielectric layers. ... Infineon Technologies Austria Ag

05/19/16 / #20160141376

Vertical semiconductor device and method for manufacturing therefor

A vertical semiconductor device includes a semiconductor body having a front side, a backside arranged opposite to the front side and a lateral edge delimiting the semiconductor body in a horizontal direction perpendicular to the front side, a gate metallization arranged on the front side and extending at least close to the lateral edge; a contact metallization arranged on the front side and between the lateral edge and the gate metallization, and a backside metallization arranged on the backside and in electric contact with the contact metallization. The gate metallization is arranged around at least two sides of the contact metallization when viewed from above.. ... Infineon Technologies Austria Ag

05/19/16 / #20160141354

Patterned back-barrier for iii-nitride semiconductor devices

A compound semiconductor device includes a iii-nitride buffer and a iii-nitride barrier on the iii-nitride buffer. The iii-nitride barrier has a different band gap than the iii-nitride buffer so that a two-dimensional charge carrier gas channel arises along an interface between the iii-nitride buffer and the iii-nitride barrier. ... Infineon Technologies Austria Ag

05/12/16 / #20160134330

Signal transmission arrangement with a transformer and signal transmission method

A circuit arrangement with a transmission arrangement is disclosed including a transformer.. . ... Infineon Technologies Austria Ag

05/12/16 / #20160133627

Semiconductor device

A semiconductor device is provided that includes a composite semiconductor body including a high voltage depletion-mode transistor and a low voltage enhancement-mode transistor. The high voltage depletion-mode transistor is stacked on the low voltage enhancement-mode transistor so that an interface is formed between the high voltage depletion-mode transistor and the low voltage enhancement-mode transistor. ... Infineon Technologies Austria Ag

05/12/16 / #20160133620

Power semiconductor device with temperature protection

A temperature protected power semiconductor device has a substrate which includes a power field effect transistor (fet) and a thermosensitive element. The power fet has a gate electrode connected to a gate, a drift region, and first and second terminals for a load current. ... Infineon Technologies Austria Ag

05/05/16 / #20160128198

Electronic component

In an embodiment, a method includes inserting an electronic component including a power semiconductor device embedded in a dielectric core layer into a slot in a side face of a circuit board. The inserting the electronic component causes one or more electrically conductive contacts on one or more surfaces of the electronic component to electrically couple with one or more corresponding electrical contacts arranged on one or more surfaces of the slot.. ... Infineon Technologies Austria Ag

05/05/16 / #20160128197

System and method

In an embodiment, a method includes arranging a first carrier on a first major surface of a circuit board such that an electronic component arranged on the first carrier is positioned in an aperture in the circuit board and spaced apart from side walls of the aperture, and arranging a second carrier on a second major surface of the circuit board such that the second carrier covers the electronic component and the aperture, the second major surface of the circuit board opposing the first major surface of the circuit board. The electronic component includes a power semiconductor device embedded in a dielectric core layer and at least one contact pad arranged on a first major surface of the dielectric core layer.. ... Infineon Technologies Austria Ag

05/05/16 / #20160126949

Adjustable internal gate resistor

The disclosure describes a method for controlling a voltage that is applied to a voltage controlled circuit element. In one example, the method includes controlling, by a semiconductor light source, a resistance value of a photoresistor coupled to a voltage controlled circuit element. ... Infineon Technologies Austria Ag

05/05/16 / #20160126940

Speed booster for comparator

Representative implementations of devices and techniques provide a speed increase to a comparator circuit. An active clamp device may be positioned between an input stage and an output stage of the comparator, limiting the voltage range of the output of the first stage.. ... Infineon Technologies Austria Ag

05/05/16 / #20160126844

Secondary side control of resonant dc/dc converters

A secondary-side rectification and regulation circuit includes a secondary-side transformer winding, a full-wave rectifier circuit and a control unit. The full-wave rectifier has a first pair of controllable rectifiers including a first transistor connected to a first terminal of the secondary-side transformer winding and a second transistor connected to a second terminal of the secondary-side transformer winding. ... Infineon Technologies Austria Ag

05/05/16 / #20160126837

Intermediate voltage bus converter with power saving modes

A dc/dc voltage converter includes a first stage operable to convert a first dc voltage rail to a second dc voltage rail different than the first dc voltage rail and a second stage operable to convert the second dc voltage rail to a third dc voltage rail lower than the second dc voltage rail and deliver current to a load at the third dc voltage rail, the amount of current delivered to the load corresponding to an operating set point of the second stage. The second stage is operable to change its operating set point responsive to a command received from the load, such that the amount of current delivered to the load is reduced. ... Infineon Technologies Austria Ag

05/05/16 / #20160126210

Electronic component, system and method

In an embodiment, an electronic component includes a power semiconductor device embedded in a dielectric core layer and at least one contact layer protruding from a first side face of the dielectric core layer. The contact layer includes an electrically insulating layer and at least one contact pad arranged on the electrically insulating layer. ... Infineon Technologies Austria Ag

05/05/16 / #20160124455

High speed tracking dual direction current sense system

A tracking current sense system is described that includes a current source and a current control device. The current source alternatively and substantially replicates a first current flowing through a first switch and a second current flowing through a second switch. ... Infineon Technologies Austria Ag

05/05/16 / #20160124027

High speed tracking dual direction current sense system

A tracking current sense system is described that includes a first current tracking system, a second current tracking system, and a pre-biasing device. The first current tracking system is configured to replicate a first current flowing through a first switch and the second current tracking system is configured to replicate a second current flowing through a second switch. ... Infineon Technologies Austria Ag

04/28/16 / #20160116345

System and method for temperature sensing

According to an embodiment, a method of operating a measurement circuit includes biasing a sense transistor to conduct current through a first conduction channel in a first direction during a first mode, injecting a measurement current into a body diode of the sense transistor during a second mode, measuring a first voltage across the sense transistor when the measurement current is injected, and determining a temperature of the sense transistor based on the first voltage. When the measurement current is injected, it is injected in a second direction opposite the first direction. ... Infineon Technologies Austria Ag

04/07/16 / #20160099707

Circuit with a plurality of transistors and method for controlling such a circuit

A circuit includes a transistor circuit including a first node, a second node, and a plurality of transistors coupled in parallel between the first node and the second node. The circuit further includes a drive circuit configured to switch on a first group of the plurality of transistors, the first group including a first subgroup and a second subgroup and each of the first subgroup and the second subgroup including one or more of the transistors. ... Infineon Technologies Austria Ag

04/07/16 / #20160099593

Battery charge state evaluation coincident with constant current charging

Disclosed techniques include delivering a substantially constant current to charge a battery including at least one electrochemical battery cell, and measuring a charging voltage of the battery while delivering the substantially constant current to the battery. The method further includes evaluating a state of charge of the battery based on the measured charging voltage and the measured test voltage, and storing, based on the evaluation of the state of charge of the battery, an indication of the state of charge of the battery in a non-transitory computer readable medium.. ... Infineon Technologies Austria Ag

04/07/16 / #20160099207

Electronic module comprising a plurality of encapsulation layers and a method for producing it

An electronic module includes a first insulation layer, at least one carrier having a first main surface, a second main surface situated opposite the first main surface, and side surfaces connecting the first and second main surfaces to one another, at least one semiconductor chip arranged on the second main surface of the carrier, wherein the semiconductor chip has contact elements, and a second insulation layer, which is arranged on the carrier and the semiconductor chip.. . ... Infineon Technologies Austria Ag

04/07/16 / #20160099180

Method for manufacturing a semiconductor switching device with different local cell geometry

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having an outer rim, an active area, and an edge termination region arranged between the active area and the outer rim, and forming a plurality of switchable cells in the active area. Each of the switchable cells includes a body region, a gate electrode structure, and a source region. ... Infineon Technologies Austria Ag

03/31/16 / #20160093747

Method of controlling breakdown voltage of a diode having a semiconductor body

A diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, a base region arranged between the first and second emitter regions and having a lower doping concentration than the first and second emitter regions, a first emitter electrode electrically coupled to the first emitter region, a second emitter electrode in electrical contact with the second emitter region, a control electrode arrangement comprising a first control electrode section and a first dielectric layer arranged between the first control electrode section and the semiconductor body, and at least one pn junction extending to the first dielectric layer, or arranged distant to the first dielectric layer by less than 250 nm. The breakdown voltage of the diode is adjusted by applying a control potential to the first control electrode section.. ... Infineon Technologies Austria Ag

03/31/16 / #20160093529

Method of manufacturing a semiconductor device having a cell field portion and a contact area

A semiconductor device is manufactured at least partially in a semiconductor substrate. The substrate has first and second opposing main surfaces. ... Infineon Technologies Austria Ag

03/24/16 / #20160087418

Failure detection for switch devices

A device and a method for temporarily closing a switch are disclosed. In an embodiment the device includes a first switch configured to be coupled to a load and a control circuit configured to temporarily close the first switch in response to a detection of a failure event in the first switch.. ... Infineon Technologies Austria Ag

03/24/16 / #20160087089

Non-planar normally off compound semiconductor device

A normally-off compound semiconductor device includes a first iii-nitride semiconductor having a first sloped transition region in which the first iii-nitride semiconductor transitions at an angle from a first level to a second level different than the first level, and a second iii-nitride semiconductor on the first iii-nitride semiconductor and having a different band gap than the first iii-nitride semiconductor so that a two-dimensional charge carrier gas arises along an interface between the first and second iii-nitride semiconductors. The normally-off compound semiconductor device further includes a gate on the second iii-nitride semiconductor and a doped semiconductor over the first sloped transition region and interposed between the gate and the second iii-nitride semiconductor. ... Infineon Technologies Austria Ag

03/24/16 / #20160087074

Metalization of a field effect power transistor

A metalization of a field effect power transistor having lateral semiconductor layers on an insulator substrate or an intrinsically conducting semiconductor substrate is described. The lateral semiconductor layers have different band gaps such that a two-dimensional electron gas can form in their semiconductor depletion layer. ... Infineon Technologies Austria Ag

03/24/16 / #20160086897

Electronic component

In an embodiment, a semiconductor device includes a lateral transistor device having an upper metallization layer. The upper metallization layer includes n elongated pad regions. ... Infineon Technologies Austria Ag

03/24/16 / #20160086878

Electronic component

In an embodiment, an electronic component includes a high-voltage depletion mode transistor including a current path coupled in series with a current path of a low-voltage enhancement mode transistor, a diode including an anode and a cathode, and a die pad. A rear surface of the high-voltage depletion mode transistor is mounted on and electrically coupled to the die pad. ... Infineon Technologies Austria Ag

03/24/16 / #20160086847

Method of electrodepositing gold on a copper seed layer to form a gold metallization structure

An electrically conductive barrier layer is formed on a semiconductor substrate such that the barrier layer covers a first device terminal. A seed layer is formed on the barrier layer. ... Infineon Technologies Austria Ag

03/24/16 / #20160082718

Methods with inkjet processes and their application

A method a described which includes depositing a first component of a multicomponent system by means of an inkjet process, and depositing a second component of the multicomponent system by means of an inkjet process.. . ... Infineon Technologies Austria Ag

03/17/16 / #20160079851

Dynamic voltage transition control in switched mode power converters

A switched mode power converter includes a power stage, a main compensator, and a voltage ramp circuit. The power stage is operable to output a voltage to a load. ... Infineon Technologies Austria Ag

03/17/16 / #20160079377

Semiconductor device with current sensor

A semiconductor device includes a semiconductor body. The semiconductor body includes a load transistor part and a sensor transistor part. ... Infineon Technologies Austria Ag

03/17/16 / #20160079376

Semiconductor device with field electrode structure

According to an embodiment a semiconductor device includes a semiconductor body with a mesa section that may include a rectifying structure and a first drift zone section. The mesa section surrounds a field electrode structure that includes a field electrode and a field dielectric sandwiched between the field electrode and the semiconductor body. ... Infineon Technologies Austria Ag

03/17/16 / #20160079238

Semiconductor device with field electrode structures, gate structures and auxiliary diode structures

A semiconductor device includes field electrode structures extending in a direction vertical to a first surface in a semiconductor body. Cell mesas are formed from portions of the semiconductor body between the field electrode structures and include body zones that form first pn junctions with a drift zone. ... Infineon Technologies Austria Ag

03/17/16 / #20160079233

Iii-v semiconductor material based ac switch

A power circuit is described that includes a semiconductor die and a coupling structure. The semiconductor die includes a common substrate and a iii-v semiconductor layer formed atop the common substrate. ... Infineon Technologies Austria Ag

03/10/16 / #20160072398

Multi-cell power conversion method and multi-cell power converter

A power converter circuit includes a power converter with a plurality of series connected converter cells. Each of the plurality of converter cells includes at least one first half-bridge circuit including a first silicon mosfet (metal oxide semiconductor field-effect transistor) and a second silicon mosfet. ... Infineon Technologies Austria Ag

03/10/16 / #20160072397

Multi-cell power conversion method and multi-cell power converter

A method includes converting power by a power converter comprising a plurality of converter cells and at least one filter cell, receiving a cell input power at a cell input and providing a cell output power at a cell output of at least one of the plurality of converter cells, and operating the filter cell in one of an input power mod, in which the filter cell receives an input power, and an output power mode, in which the filter cell provides an output power.. . ... Infineon Technologies Austria Ag

03/10/16 / #20160072396

Multi-cell power conversion method and multi-cell power converter

A method includes receiving a periodic voltage by a power converter comprising a plurality of converter cells and, in a series of time frames of equal duration, alternating an average power level of power converted by at least one converter cell of the plurality of converter cells. Each of the series of time frames corresponds to a time period between sequential zero crossings of the periodic voltage.. ... Infineon Technologies Austria Ag

03/10/16 / #20160072395

Multi-cell power conversion method and multi-cell power converter

A power converter circuit includes a plurality of converter cells. At least a first converter cell of the plurality of converter cells has a first operational characteristic. ... Infineon Technologies Austria Ag

03/10/16 / #20160072394

Multi-cell power conversion method and multi-cell power converter

A method includes converting power by a power converter comprising a plurality of converter cells, and selectively operating at least one converter cell of the plurality of converter cells in one of an active and an inactive mode based on a level of a power reference signal.. . ... Infineon Technologies Austria Ag

03/10/16 / #20160071967

High-electron-mobility transistor having a buried field plate

A high-electron-mobility field effect transistor is formed with a buffer region having a stepped lateral profile, the stepped lateral profile having first, second and third cross-sections of the buffer region, the first cross-section being thicker than the third cross-section and including a buried field plate, the second cross-section interposed between the first and third cross-sections and forming oblique angles with the first and third cross-sections. A barrier region is formed along the stepped lateral profile. ... Infineon Technologies Austria Ag

03/10/16 / #20160071819

Method of producing a semiconductor device and a semiconductor device

A method of producing a semiconductor device is provided. The method includes: providing a semiconductor wafer, the wafer including an upper layer of a semiconductor material, an inner etch stop layer and a lower layer; forming a plurality of functional areas in the upper layer; performing a selective first etch process on the upper layer so as to separate the plurality of functional areas from each other by trenches etched through the upper layer, the first etch process being substantially stopped by the inner etch stop layer; and removing the lower layer by a second etch process, the second etch process being substantially stopped by the inner etch stop layer.. ... Infineon Technologies Austria Ag

03/10/16 / #20160070335

Configurable digital interface for switching voltage regulators

A high-speed, low-latency configurable digital interface for a voltage regulator includes a first hardwired unit, a second hardwired unit and a programmable microcontroller interfaced between the first and second hardwired units. The first hardwired unit is operable to deserialize incoming frames received over the configurable digital interface into commands and data associated with operation of a switching voltage regulator, and serialize outgoing data into new frames for transmission over the configurable digital interface. ... Infineon Technologies Austria Ag

03/03/16 / #20160065204

System and method for generating an auxiliary voltage

In accordance with an embodiment, a circuit includes a first normally-on transistor having a drain coupled to a first switching output node, a normally-off transistor having a drain coupled to a source of the first normally-on transistor, a driver circuit configured to receive a switching signal, the driver circuit having an output coupled to a gate of the first normally-on transistor, and a second normally-on transistor having a drain terminal coupled to a supply node, a gate terminal coupled to the output of the driver circuit, and a source terminal configured to provide an auxiliary voltage.. . ... Infineon Technologies Austria Ag

03/03/16 / #20160065203

System and method for a switch having a normally-on transistor and a normally-off transistor

In accordance with an embodiment, a circuit includes a normally-off transistor, and a normally-on transistor comprising a second load path terminal coupled to a first load path terminal of the normally off transistor, and a control terminal coupled to a second load path terminal of the normally-off transistor. The circuit further includes a driver circuit having an output coupled to a control terminal of the normally off transistor, a first power supply terminal configured to be coupled to a first power supply terminal of a first power supply, and a second power supply terminal configured to be coupled to a second power supply terminal of a second power supply. ... Infineon Technologies Austria Ag

03/03/16 / #20160065086

System and method for driving a transistor

In accordance with an embodiment, a circuit for driving a control terminal of a switching transistor includes a driver having an output configured to be coupled to the control terminal of the switching transistor, a first power supply terminal configured to be coupled to a first terminal of a floating power supply, a second power supply terminal configured to be coupled to a second terminal of the floating power supply, and a switching input terminal configured to receive a switching signal. The circuit further includes a bias circuit having an output terminal configured to be coupled to a common-mode control terminal of the floating power supply, wherein the bias circuit is configured to provide a time dependent voltage.. ... Infineon Technologies Austria Ag

03/03/16 / #20160065065

Switching converter control

A device and method for operating a switching power converter are disclosed. In an embodiment a circuit includes a switching power converter having a half bridge including a high-side semiconductor switch connected to a low-side semiconductor switch and an inductor coupled to a half-bridge output node. ... Infineon Technologies Austria Ag

03/03/16 / #20160065064

System and method for a switch having a normally-on transistor and a normally-off transistor

In accordance with an embodiment, a circuit includes a first driver having a first output configured to be coupled to a control node of a normally-off transistor. The first driver is configured to drive a first switching signal at the first output in a cascode mode and configured to drive a first constant voltage at the first output in a direct drive mode. ... Infineon Technologies Austria Ag

03/03/16 / #20160064554

Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area

In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are in ohmic contact with the drain metallization. ... Infineon Technologies Austria Ag

03/03/16 / #20160064548

Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in lines. ... Infineon Technologies Austria Ag

03/03/16 / #20160064496

Semiconductor device with field electrode and contact structure

A semiconductor device includes a field electrode structure with a field electrode and a field dielectric surrounding the field electrode. A semiconductor body includes a transistor section surrounding the field electrode structure and including a source zone, a first drift zone section and a body zone separating the source zone and the first drift zone section. ... Infineon Technologies Austria Ag

03/03/16 / #20160064477

Semiconductor device and a method for manufacturing a semiconductor device

A semiconductor device comprises a semiconductor substrate structure comprising a cell region and an edge termination region surrounding the cell region. Further it comprises a plurality of needle-shaped cell trenches within the cell region reaching from a surface of the semiconductor substrate structure into the substrate structure and an edge termination trench within the edge termination region surrounding the cell region at the surface of the semiconductor substrate structure.. ... Infineon Technologies Austria Ag

03/03/16 / #20160064273

Method for producing a conductor line

A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. ... Infineon Technologies Austria Ag

02/25/16 / #20160056704

Information exchange via flyback transformer for primary side control

A power circuit is described that includes a transformer having a primary winding and a secondary winding, a primary side coupled to the primary winding and a secondary side coupled to the secondary winding. The primary side includes a primary element configured to switch-on or switch-off based at least in part on a primary voltage or a primary current at the primary side. ... Infineon Technologies Austria Ag

02/25/16 / #20160056703

Information exchange via flyback transformer for secondary side control

A power circuit is described that includes a transformer having a primary winding and a secondary winding, a primary side coupled to the primary winding and a secondary side coupled to the secondary winding. The primary side includes a primary element configured to switch-on or switch-off based on a primary voltage or a primary current at the primary side. ... Infineon Technologies Austria Ag

02/25/16 / #20160056092

Leadframe and method of manufacturing the same

A hybrid leadframe is provided comprising a thin leadframe layer comprising a diepad and a structured region; and a metal layer being thicker than the thin leadframe layer and arranged on the diepad.. . ... Infineon Technologies Austria Ag

02/25/16 / #20160055909

Integrated circuit comprising an input transistor including a charge storage structure

An electronic circuit comprises an input insulated gate field effect transistor. The input insulated gate field effect transistor comprises first and second load terminals and a control terminal. ... Infineon Technologies Austria Ag

02/18/16 / #20160049486

Semiconductor device having a tapered gate structure and method

A semiconductor device includes a semiconductor body having a first surface vertically spaced apart from a second surface. A first trench vertically extends into the semiconductor body from the first surface and includes first and second sidewalls extending across the semiconductor body in a lateral direction that is parallel to the first surface. ... Infineon Technologies Austria Ag

02/11/16 / #20160043657

Rectifier with voltage detection

The rectifier includes two input paths configured to receive an alternating input voltage and two output paths configured to provide a direct output voltage. A switched-mode rectifying path is connected between one of the input paths and one of the output paths and comprises at least two semiconductor elements with controllable paths; the controllable paths are series-connected with each other. ... Infineon Technologies Austria Ag

02/11/16 / #20160043210

Compound semiconductor device

A semiconductor device includes a first compound semiconductor material and a second compound semiconductor material on the first compound semiconductor material. The second compound semiconductor material comprises a different material than the first compound semiconductor material such that the first compound semiconductor material has a two-dimensional electron gas (2deg). ... Infineon Technologies Austria Ag

02/11/16 / #20160043072

Systems and methods for integrating bootstrap circuit elements in power transistors and other devices

Embodiments relate to bootstrap circuits integrated with at least one other device, such as a power transistor or other semiconductor device. In embodiments, the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap diode, or the bootstrap circuit can comprise a bootstrap capacitor and a bootstrap transistor. ... Infineon Technologies Austria Ag

02/11/16 / #20160043013

Semiconductor device having a locally reinforced metallization structure

A semiconductor device includes a semiconductor substrate having a first side, at least a first area formed in the semiconductor substrate, at least a second area formed in the semiconductor substrate, a first metal layer structure having at least a first metal portion in the first area and at least a second metal portion in the second area, and a second metal layer structure on and in ohmic contact with the first metal portion in the first area while leaving the second metal portion of the first metal layer structure in the second area uncovered. The second metal layer structure and the first metal portion of the first metal layer structure form together a common metallization structure on the first side of the semiconductor substrate in the first area.. ... Infineon Technologies Austria Ag

02/11/16 / #20160043000

Semiconductor device having field-effect structures with different gate materials, and method for manufacturing thereof

A semiconductor device includes a semiconductor substrate, at least a first field-effect structure integrated in the semiconductor substrate and at least a second field-effect structure integrated in the semiconductor substrate. The first field-effect structure includes a first gate electrode comprised of a polycrystalline semiconductor material. ... Infineon Technologies Austria Ag

02/11/16 / #20160041220

Probe card and method for performing an unclamped inductive switching test

A probe card with a ground contact, a first contact element and a second contact element is provided. The first contact element is coupled to an interconnection node via a first interconnection line having a definite length and the second contact element is coupled to the interconnection node via a second interconnection line having the same definite length. ... Infineon Technologies Austria Ag

02/04/16 / #20160036324

System and method for a switching converter

According to various embodiments, a method for operating a switching converter includes determining an operating parameter of the switching converter and, if the operating parameter is outside a first operating range, adjusting a control parameter in order to adjust the operating parameter to be within the first operating range. The operating parameter includes at least one of a switching frequency of the switching converter and a current ripple value of an output current.. ... Infineon Technologies Austria Ag

02/04/16 / #20160035882

Multiple semiconductor device trenches per cell pitch

A semiconductor device includes a plurality of field plate trenches formed in a semiconductor substrate, a plurality of gate trenches formed in the semiconductor substrate and spaced apart from the field plate trenches, and a plurality of device cells having a cell pitch defined by a distance from one side of a field plate trench to the same side of an adjacent field plate trench. Each device cell includes a first doped region of a first conductivity type and a second doped region of a second conductivity type adjacent the first doped region in a part of the semiconductor substrate disposed between the adjacent field plate trenches that define the cell pitch. ... Infineon Technologies Austria Ag

02/04/16 / #20160035862

Field plate trench transistor and method for producing it

A field plate trench transistor having a semiconductor body. In one embodiment the semiconductor has a trench structure and an electrode structure embedded in the trench structure. ... Infineon Technologies Austria Ag

02/04/16 / #20160035842

Semiconductor device including a trench at least partially filled with a conductive material in a semiconductor substrate and method of manufacturing a semiconductor device

A semiconductor device includes a semiconductor substrate and a first trench extending into or through the semiconductor substrate from a first side. The first trench is at least partially filled with a conductive material and electrically connected to the semiconductor substrate via a doped semiconductor layer at a sidewall of the first trench. ... Infineon Technologies Austria Ag

01/28/16 / #20160028319

Self-driven synchronous rectification for a power converter

A power converter with an isolated topology may include a power transistor, a sense transistor, and a read-out circuit. The sense transistor may be arranged in a current mirror configuration with the power transistor such that the gate terminal of the sense transistor is coupled to the gate terminal of the power transistor and the first drain/source terminal of the sense transistor is coupled to the first drain/source terminal of the power transistor. ... Infineon Technologies Austria Ag

01/28/16 / #20160025403

Temperature regulating system and method of deicing the temperature regulating system

In one example, a temperature regulating system, the system comprising temperature regulating device including a hot side and a cold side; and an icing sensor disposed on the cold side and which provides an output which changes based on a condition of the cold side; wherein the system is configured to detect, via the output of the icing sensor, icing of the cold side during a temperature regulating operation, and initiate deicing of the cold side based on the detection of the icing of the cold side.. . ... Infineon Technologies Austria Ag

01/21/16 / #20160020703

Synchronous rectification for flyback converter

A flyback converter is described that includes a synchronous rectification integrated circuit (sric). The sric is configured to determine an actual turn-on time associated with a secondary switching element during an initial switching cycle and determine an error time that defines approximately a difference between the actual turn-on time and a predicted turn-on time associated with the secondary switching element. ... Infineon Technologies Austria Ag

01/21/16 / #20160020319

Power mosfet and method of manufacturing a power mosfet

A power mosfet includes a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main surface. The power mosfet further includes a field electrode in a field plate trench in the main surface. ... Infineon Technologies Austria Ag

01/21/16 / #20160020315

Semiconductor device comprising a plurality of transistor cells and manufacturing method

A semiconductor device comprises a plurality of transistor cells. Each one of the plurality of transistor cells comprises a trench extending into a drift zone of a semiconductor body from a first surface, the drift zone being of a first conductivity type. ... Infineon Technologies Austria Ag

01/21/16 / #20160020287

Semiconductor device with field electrode and field dielectric

A semiconductor device includes a field electrode structure that includes a field electrode and a field dielectric surrounding the field electrode. The field dielectric includes a first dielectric layer and a second dielectric layer having a smaller band gap and/or a lower conduction band edge than the first dielectric layer. ... Infineon Technologies Austria Ag

01/21/16 / #20160020004

Measuring resistor and method for producing a measuring resistor

A measuring resistor for high-current measurements is provided, which has a defined resistance value. The measuring resistor has a resistive layer having a sheet resistivity. ... Infineon Technologies Austria Ag

01/21/16 / #20160018839

Configurable slope temperature sensor

Representative implementations of devices and techniques provide a configurable slope of a voltage response of a bandgap-based temperature sensor circuit. The slope and/or a translation of the voltage response may be configured by current domain operations at a strategic node.. ... Infineon Technologies Austria Ag

01/14/16 / #20160013719

Method and apparatus for controller optimization of a switching voltage regulator

Control loop coefficients for a digital voltage regulator controller are determined by determining pid (proportional-integral-derivative) coefficients that satisfy gain and phase margin targets for a digital voltage regulator controller, as a function of a plurality of system parameters for the digital voltage regulator controller, and re-determining one or more of the pid coefficients to flatten an output impedance response of the digital voltage regulator controller for frequencies below a bandwidth of the digital voltage regulator controller.. . ... Infineon Technologies Austria Ag

01/14/16 / #20160013639

Electronic switching element and integrated sensor

A circuit may comprise an electronic switching element, an integrated sensor, and a low-impedance path from one of the terminals of the sensor to one of the terminals of the electronic switching element.. . ... Infineon Technologies Austria Ag

01/14/16 / #20160013280

Semiconductor device comprising a field electrode

A semiconductor device includes a gate electrode adjacent to a body region in a semiconductor substrate. The semiconductor device further includes a field electrode in a field plate trench in the main surface, the field plate trench having an extension length in a first direction parallel to a main surface. ... Infineon Technologies Austria Ag

01/07/16 / #20160007470

Method and device for electrically coupling a plurality of semiconductor device layers by a common conductive layer

An assembly includes a first laminate electronic component and a second laminate electronic component. The first laminate electronic component includes a first dielectric layer, at least one first semiconductor die embedded in the first dielectric layer and at least one first contact pad including a first conductive via. ... Infineon Technologies Austria Ag

01/07/16 / #20160006353

Switching converter with an adjustable transistor component

A switching converter includes a transistor arrangement having a plurality of n transistors, with n≧2, each including a gate terminal, and a load path between a source and a drain terminal, and at least m, with m≦n and m≧1 of the n transistors having a control terminal. The control terminal of each of the m transistors is configured to receive a control signal that adjusts an activation state of the transistor. ... Infineon Technologies Austria Ag

01/07/16 / #20160005811

Charge compensation device and manufacturing therefor

A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a horizontal direction substantially parallel to the first surface, an active area, and a peripheral area arranged between the active area and the lateral edge. A source metallization is arranged on the first surface. ... Infineon Technologies Austria Ag

01/07/16 / #20160005684

Electronic component and method for electrically coupling a semiconductor die to a contact pad

In an embodiment, an electronic component includes a dielectric core layer, one or semiconductor dies comprising a first major surface, a first electrode arranged on the first major surface and a second major surface that opposes the first major surface. One or more slots are arranged within the dielectric core layer adjacent the semiconductor die and a redistribution structure electrically couples the first electrode to a component contact pad arranged adjacent the second major surface of the semiconductor die. ... Infineon Technologies Austria Ag

01/07/16 / #20160005673

Electronic component and method for dissipating heat from a semiconductor die

In an embodiment, an electronic component includes a dielectric core layer having a thickness, at least one semiconductor die embedded in the dielectric core layer and electrically coupled to at least one contact pad arranged on a first side of the dielectric core layer, and a heat dissipation layer arranged on a second side of the dielectric core layer and thermally coupled to the semiconductor die. The semiconductor die has a thickness that is substantially equal to, or greater than, or equal to the thickness of the dielectric core layer. ... Infineon Technologies Austria Ag








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