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Infineon Technologies Dresden Gmbh patents


Recent patent applications related to Infineon Technologies Dresden Gmbh. Infineon Technologies Dresden Gmbh is listed as an Agent/Assignee. Note: Infineon Technologies Dresden Gmbh may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Dresden Gmbh, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Dresden Gmbh-related inventors


Semiconductor device including a gate contact structure

A semiconductor device includes a semiconductor body. The semiconductor body has a first surface and a second surface opposite to the first surface. ... Infineon Technologies Dresden Gmbh

Accelerometer with compatibility to complementary metal-oxide-semiconductor technologies

An accelerometer may include a seismic mass to flex based on acceleration components perpendicular to a surface of a substrate. The seismic mass may include a first electrode and a portion of the substrate. ... Infineon Technologies Dresden Gmbh

Semiconductor device having silicide layers

A semiconductor device includes a semiconductor substrate having a first side, and a trench structure having a bottom and a sidewall. The bottom has at least first and second bottom portions laterally adjacent to one another. ... Infineon Technologies Dresden Gmbh

Electronic switching and reverse polarity protection circuit

An electronic circuit includes a first transistor device and a second transistor device of the same conductivity type. The first transistor device is integrated in a first semiconductor body and includes a first load pad at a first surface of the first semiconductor body and a second load pad at a second surface of the first semiconductor body. ... Infineon Technologies Dresden Gmbh

Method for manufacturing an electronic device and method for operating an electronic device

According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.. . ... Infineon Technologies Dresden Gmbh

Emitter and method for manufacturing the same

A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity adjacent to the main surface. A portion of the semiconductor substrate arranged between the cavity and the main surface of the semiconductor substrate forms a support structure. ... Infineon Technologies Dresden Gmbh

Integrated semiconductor device and manufacturing method

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.. . ... Infineon Technologies Dresden Gmbh

Methods of manufacturing a semiconductor device with a buried doped region and a contact structure

A method of manufacturing a semiconductor device includes: forming a doped region in a semiconductor substrate at a first distance to a main surface plane of the semiconductor substrate, wherein the doped region is a first section of a semiconductor column extending from the main surface plane into the semiconductor substrate; forming an insulator structure surrounding at least a second section of the semiconductor column between the main surface plane and the first section in planes parallel to the main surface plane; removing the second section of the semiconductor column; and forming a contact structure extending from the main surface plane to the doped region, wherein the contact structure includes a fill structure and a contact layer, the contact layer formed from a metal semiconductor alloy and directly adjoining the doped region and the fill structure formed from a metal and/or a conductive metal compound.. . ... Infineon Technologies Dresden Gmbh

Circuit arrangement having a first semiconductor switch and a second semiconductor switch

A circuit has first and second semiconductor switches, each of which has a load path and control terminal connected in series. Each switch includes a first semiconductor device having a load path and a control terminal coupled to the control terminal of its switch, and a second semiconductor device having a load path between first and second load terminals, and a control terminal. ... Infineon Technologies Dresden Gmbh

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. ... Infineon Technologies Dresden Gmbh

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. ... Infineon Technologies Dresden Gmbh

Microelectromechanical device and method for forming a microelectromechanical device having a support structure holding a lamella structure

A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. ... Infineon Technologies Dresden Gmbh

Method for manufacturing a bipolar junction transistor

Embodiments provide a method for manufacturing a bipolar junction transistor. The method comprises a step of providing a layer stack, the layer stack comprising a semiconductor substrate having a trench isolation, a base contact layer stack, wherein the base contact layer stack comprises a recess forming an emitter window, lateral spacers arranged on sidewalls of the emitter window, the lateral spacers isolating a base contact layer of the base contact layer stack; and a base layer arranged in the emitter window on the semiconductor substrate, wherein the base layer at least partially protrudes under the lateral spacers. ... Infineon Technologies Dresden Gmbh

Semiconductor device having an electrostatic discharge protection structure

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A first isolation layer is provided over the first surface of the semiconductor body. ... Infineon Technologies Dresden Gmbh

02/15/18 / #20180047582

Semiconductor device and method of manufacturing the semiconductor device

A method of manufacturing a semiconductor device includes forming an etching mask over a semiconductor body, forming a plurality of trenches in the semiconductor body to define a plurality of protruding semiconductor portions between adjacent trenches, and forming a protection layer in contact with a semiconductor material of the protruding semiconductor portions. The method further includes performing a wet etching step to remove portions of the etching mask and, thereafter, treating the semiconductor body with a mixture of hydrofluoric acid and ethylene glycol and bringing the semiconductor material of sidewalls of the plurality of protruding semiconductor portions into contact with the mixture of hydrofluoric acid and ethylene glycol.. ... Infineon Technologies Dresden Gmbh

02/08/18 / #20180040729

Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit

A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. ... Infineon Technologies Dresden Gmbh

01/18/18 / #20180017456

Pressure sensor device and manufacturing method

A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a beol process (beol=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor structure, and (2) a pressure port through the metal-insulator-stack arrangement for providing a fluidic connection between the cavity and an environmental atmosphere, wherein the pressure port has a cross-sectional area, which is smaller than 10% of a footprint area of the pressure sensor structure within the cavity.. . ... Infineon Technologies Dresden Gmbh

12/28/17 / #20170369306

Stress decoupled piezoresistive relative pressure sensor and method for manufacturing the same

Embodiments provide a mems (micro electro mechanical system) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate comprises a first buried empty space, wherein the second portion of the semiconductor substrate comprises a second buried empty space, and wherein the semiconductor substrate comprises a pressure channel fluidically connecting the first buried empty space and the second buried empty space.. . ... Infineon Technologies Dresden Gmbh

12/21/17 / #20170365688

Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base link

Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a pad resulting from a manufacturing of the trench isolation is arranged on the semiconductor substrate, providing an isolation layer on the semiconductor substrate and the pad such that the pad is covered by the isolation layer, removing the isolation layer up to the pad, and selectively removing the pad to obtain an emitter window.. ... Infineon Technologies Dresden Gmbh

12/21/17 / #20170365687

Method for manufacturing an emitter for high-speed heterojunction bipolar transistors

A method for manufacturing a bipolar junction transistor is provided. A layer stack is provided that comprises a semiconductor substrate having a trench isolation; an isolation layer arranged on the semiconductor substrate, wherein the first isolation layer comprises a recess forming an emitter window; lateral spacers arranged on sidewalls of the emitter window; a base layer arranged in the emitter window on the semiconductor substrate; and an emitter layer arranged on the isolation layer, the lateral spacers and the base layer. ... Infineon Technologies Dresden Gmbh

12/21/17 / #20170365539

Semiconductor packages and methods of fabrication thereof

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. ... Infineon Technologies Dresden Gmbh

12/14/17 / #20170356837

Particle sensor and method for sensing particles in a fluid

Various embodiments provide a particle sensor including: a first carrier, the first carrier including at least one heating structure and a light detecting structure, at least one spacer structure disposed over the first carrier, a second carrier disposed over the at least one spacer structure, the second carrier including a light emitting structure, wherein the first carrier, the second carrier and the at least one spacer structure are arranged to provide a channel for a fluid flow, wherein the light emitting structure is configured to emit light into the channel and wherein the light detecting structure is configured to detect light from the channel.. . ... Infineon Technologies Dresden Gmbh

10/05/17 / #20170288042

Method for manufacturing a transistor

A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor substrate and the sacrificial layer. ... Infineon Technologies Dresden Gmbh

10/05/17 / #20170287772

Silicon on nothing devices and methods of formation thereof

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. ... Infineon Technologies Dresden Gmbh

09/21/17 / #20170271722

Semiconductor battery and semiconductor device including a semiconductor battery

A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first face and a second face. ... Infineon Technologies Dresden Gmbh

09/21/17 / #20170271319

Semiconductor device

A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor device further includes a transistor structure in the semiconductor body and a source contact structure overlapping the transistor structure. ... Infineon Technologies Dresden Gmbh

08/03/17 / #20170222010

Method for manufacturing a semiconductor device having silicide layers

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. ... Infineon Technologies Dresden Gmbh

07/27/17 / #20170213773

Wafer arrangement, a method for testing a wafer, and a method for processing a wafer

According to various embodiments, a wafer arrangement may be provided, the wafer arrangement may include: a wafer including at least one electronic component having at least one electronic contact exposed on a surface of the wafer; an adhesive layer structure disposed over the surface of the wafer, the adhesive layer structure covering the at least one electronic contact; and a carrier adhered to the wafer via the adhesive layer structure, wherein the carrier may include a contact structure at a surface of the carrier aligned with the at least one electronic contact so that by pressing the wafer in direction of the carrier, the contact structure can be brought into electrical contact with the at least one electronic contact of the at least one electronic component.. . ... Infineon Technologies Dresden Gmbh

05/18/17 / #20170140978

Carrier and a method for processing a carrier

According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including one or more trenches extending from the surface of the carrier to the hollow chamber, and one or more support structures intersecting the one or more trenches and connecting the first region of the carrier with a second region of the carrier outside the trench structure, wherein the one or more support structures including an electrically insulating material.. . ... Infineon Technologies Dresden Gmbh

04/27/17 / #20170115452

Silicon light trap devices, systems and methods

Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art.. ... Infineon Technologies Dresden Gmbh

04/13/17 / #20170104187

Optoelectronic component, a method for manufacturing an optoelectronic component, and a method for processing a carrier

According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.. . ... Infineon Technologies Dresden Gmbh

03/30/17 / #20170092659

Method for manufacturing an electronic device and method for operating an electronic device

According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the electrically insulating structure; a first electronic component arranged in the first region of the carrier over the electrically insulating structure; a second electronic component arranged in the second region of the carrier; wherein the electrically insulating structure includes one or more hollow chambers, wherein the sidewalls of the one or more hollow chambers are covered with an electrically insulating material.. . ... Infineon Technologies Dresden Gmbh

03/30/17 / #20170089790

Sensor structures, systems and methods with improved integration and optimized footprint

Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other movable element. ... Infineon Technologies Dresden Gmbh

03/02/17 / #20170062276

Semiconductor device with contact structures extending through an interlayer and method of manufacturing

A layer stack is formed on a main surface of a semiconductor layer, wherein the layer stack includes a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer. Second portions of the layer stack are removed to form gaps between remnant first portions. ... Infineon Technologies Dresden Gmbh

02/16/17 / #20170047443

Semiconductor device comprising a transistor cell including a source contact in a trench, method for manufacturing the semiconductor device and integrated circuit

A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. ... Infineon Technologies Dresden Gmbh

02/09/17 / #20170040317

Semiconductor device with a laterally varying doping profile, and method for manufacturing thereof

A semiconductor device includes a semiconductor substrate having a first side. At least a first doping region is formed in the semiconductor substrate. ... Infineon Technologies Dresden Gmbh

01/19/17 / #20170015546

Integrated semiconductor device and manufacturing method

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate and the sensor portion thereof, wherein an extension of the suspension portion along the side of the cavity is smaller than an extension of said side of the cavity.. . ... Infineon Technologies Dresden Gmbh

01/12/17 / #20170012110

Method for filling a trench and semiconductor device

A method includes forming a first trench in a semiconductor body between two semiconductor fins, filling the first trench with a first filling material, partially removing the first filling material by forming a second trench such that the second trench has a lower aspect ratio than the first trench, and at least partially filling the second trench with a second filling material so as to form a continuous material layer on the first filling material. A semiconductor device includes a first trench in a semiconductor body between two semiconductor fins, the first trench being filled with a first filling material, and a second trench having a lower aspect ratio than the first trench and being at least partially filled with a second filling material which forms a continuous material layer on the first filling material.. ... Infineon Technologies Dresden Gmbh

01/05/17 / #20170005220

Integrated light emitting device, integrated sensor device, and manufacturing method

The present disclosure relates to an integrated light emitting device. The integrated light emitting device comprises a substrate of semiconductor material, a light emitting unit integrated into the semiconductor material, and at least one cavity formed into the semiconductor material between the substrate and the light emitting unit. ... Infineon Technologies Dresden Gmbh








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