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Lam Research Corporation patents


Recent patent applications related to Lam Research Corporation. Lam Research Corporation is listed as an Agent/Assignee. Note: Lam Research Corporation may have other listings under different names/spellings. We're not affiliated with Lam Research Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "L" | Lam Research Corporation-related inventors


 new patent  Cooling system for rf power electronics

A cooling apparatus is provided. At least one power electronic component is provided. ... Lam Research Corporation

 new patent  Systems and methods for patterning of high density standalone mram devices

A method for processing a substrate including a magnetoresistive random access memory (mram) stack includes providing a substrate including the mram stack and creating a first mask layer on a surface of the mram stack. The first mask layer defines a first mask pattern including a first plurality of spaced mask lines extending in a first direction across the surface of the mram stack and first spaces located between the first plurality of spaced mask lines. ... Lam Research Corporation

 new patent  Method to create air gaps

Tin oxide films are used to create air gaps during semiconductor substrate processing. Tin oxide films, disposed between exposed layers of other materials, such as sio2 and sin can be selectively etched using a plasma formed in an h2-containing process gas. ... Lam Research Corporation

 new patent  Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure

An insulator-type substrate is positioned on a support surface of a substrate support structure in exposure to a plasma. An initial clamping voltage is applied to an electrode within the substrate support structure to rapidly accumulate electrical charge on the support surface to hold the substrate. ... Lam Research Corporation

 new patent  Wafer transport assembly with integrated buffers

A wafer transport assembly includes a first wafer transport module and a second wafer transport module. A buffer module, arranged between the first wafer transport module and the second wafer transport module, includes a first buffer stack and a second buffer stack. ... Lam Research Corporation

 new patent  Plasma assisted doping on germanium

A method for forming a junction in a germanium (ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. ... Lam Research Corporation

 new patent  Directional deposition on patterned structures

Provided herein are methods and related apparatus that facilitate patterning by performing highly non-conformal (directional) deposition on patterned structures. The methods involve depositing films on a patterned structure, such as a hard mask. ... Lam Research Corporation

 new patent  Selective deposition of silicon oxide

Methods and apparatuses for selectively depositing silicon oxide on a silicon oxide surface relative to a silicon nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing silicon oxide on a silicon oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing silicon oxide on an exposed silicon nitride surface.. ... Lam Research Corporation

 new patent  Temperature controlled spacer for use in a substrate processing chamber

A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. ... Lam Research Corporation

 new patent  Ale smoothness: in and outside semiconductor industry

Methods of etching and smoothening films by exposing to a halogen-containing plasma and an inert plasma within a bias window in cycles are provided. Methods are suitable for etching and smoothening films of various materials in the semiconductor industry and are also applicable to applications in optics and other industries.. ... Lam Research Corporation

 new patent  Ion directionality esc

A substrate support for supporting a substrate within a semiconductor processing chamber is provided. A substrate support body is provided. ... Lam Research Corporation

Distributed, non-concentric multi-zone plasma source systems, methods and apparatus

A chamber top for a processing chamber is provided. The chamber top includes a first plasma source oriented horizontally over the chamber top and a second plasma source oriented horizontally over the chamber top. ... Lam Research Corporation

Dielectric contact etch

A method for forming a semiconductor device in a plasma processing chamber is provided. An atomic layer etch selectively etches sio with respect to sin and deposits a fluorinated polymer. ... Lam Research Corporation

Powered grid for plasma chamber

A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. ... Lam Research Corporation

08/09/18 / #20180224500

Smart vibration wafer with optional integration with semiconductor processing tool

A test wafer having two spaced-apart accelerometers mounted thereon is disclosed. The accelerometers may be positioned at locations located along a common axis passing through the center of gravity of the test wafer. ... Lam Research Corporation

08/02/18 / #20180219014

Tungsten for wordline applications

Disclosed herein are methods and related apparatus for formation of multi-component tungsten-containing films including multi-component tungsten-containing films diffusion barriers. According to various embodiments, the methods involve deposition of multi-component tungsten-containing films using tungsten chloride (wclx) precursors and boron (b)-containing, silicon (si)-containing or germanium (ge)-containing reducing agents.. ... Lam Research Corporation

08/02/18 / #20180218942

Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom

A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. ... Lam Research Corporation

08/02/18 / #20180218915

Isotropic etching of film with atomic layer control

A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (si), germanium (ge) and silicon germanium (sige). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. ... Lam Research Corporation

08/02/18 / #20180217185

Inductive current sensor on printed circuit board

A first inductive loop is formed within a printed circuit board (pcb). The pcb is mounted in a fixed spatial relationship with a radiofrequency power supply structure. ... Lam Research Corporation

07/26/18 / #20180211891

Virtual metrology systems and methods for using feedforward critical dimension data to predict other critical dimensions of a wafer

A controller includes a memory that stores a first model corresponding to a first critical dimension of a substrate processed by a substrate processing system and a second model corresponding to a second critical dimension of the substrate. The second model includes a predicted relationship between the first critical dimension and the second critical dimension. ... Lam Research Corporation

07/26/18 / #20180211864

Optimized low energy / high productivity deposition system

A mechanical indexer for a substrate processing tool includes first and second arms each having first and second end effectors. The first arm is configured to rotate on a first spindle to selectively position the first end effector of the first arm at a plurality of processing stations of the substrate processing tool and selectively position the second end effector of the first arm at the plurality of processing stations of the substrate processing tool. ... Lam Research Corporation

07/26/18 / #20180211862

Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing

An assembly used in a process chamber for depositing a film on a wafer including a pedestal assembly having a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal. ... Lam Research Corporation

07/26/18 / #20180211846

Liner and barrier applications for subtractive metal integration

Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.. ... Lam Research Corporation

07/26/18 / #20180210473

Virtual metrology method for esc temperature estimation using thermal control elements

A temperature controller for a substrate support in a substrate processing system includes memory that stores a first model correlating temperatures of a plurality of first thermal control elements (tces) arranged in the substrate support and first temperature responses of the substrate support. The first temperature responses correspond to locations on a surface of the substrate support. ... Lam Research Corporation

07/19/18 / #20180204738

Chamber for patterning non-volatile metals

Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. ... Lam Research Corporation

07/19/18 / #20180204708

Near-substrate supplemental plasma density generation with low bias voltage within inductively coupled plasma processing chamber

A substrate is positioned on a substrate support structure within a plasma processing volume of an inductively coupled plasma processing chamber. A first radiofrequency signal is supplied from a first radiofrequency signal generator to a coil disposed outside of the plasma processing volume to generate a plasma in exposure to the substrate. ... Lam Research Corporation

07/19/18 / #20180202062

Uniform flow behavior in an electroplating cell

Apparatuses and methods are provided for depositing a metal layer on a wafer. A secondary weir is positioned at a region below the primary weir such that overflowed plating solution over the primary weir during electroplating flows in a substantially azimuthally uniform manner. ... Lam Research Corporation

07/12/18 / #20180197770

Deposition of aluminum oxide etch stop layers

Aluminum oxide films characterized by a dielectric constant (k) of less than about 7 (such as between about 4-6) and having a density of at least about 2.5 g/cm3 (such as about 3.0-3.2 g/cm3) are deposited on partially fabricated semiconductor devices over both metal and dielectric to serve as etch stop layers. The films are deposited using a deposition method that does not lead to oxidative damage of the metal. ... Lam Research Corporation

07/12/18 / #20180197722

Cathode with improved rf power efficiency for semiconductor processing equipment with rf plasma

A cathode assembly for use in a plasma processing chamber is provided. A metal bowl that is grounded is provided. ... Lam Research Corporation

07/05/18 / #20180190526

Substrate support with improved process uniformity

A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. ... Lam Research Corporation

07/05/18 / #20180190503

Low roughness euv lithography

Provided herein are methods and related apparatus to smooth the edges of features patterned using extreme ultraviolet (euv) lithography. In some embodiments, at least one cycle of depositing passivation layer that preferentially collects in crevices of a feature leaving protuberances exposed, and etching the feature to remove the exposed protuberances, thereby smoothing the feature, is performed. ... Lam Research Corporation

06/28/18 / #20180182634

Atomic layer etching methods and apparatus

A method for performing atomic layer etching of a surface of a substrate is provided, including: performing a surface conversion operation by exposing the surface of the substrate to a surface conversion reactant; performing a ligand exchange operation by exposing the surface of the substrate to a ligand containing reactant; performing a desorption operation that effects removal of surface species from the surface of the substrate; performing a purge operation; repeating the surface conversion operation, the ligand exchange operation, the desorption operation, and the purge operation, for a predefined number of cycles.. . ... Lam Research Corporation

06/28/18 / #20180182632

Method of feature exaction from time-series of spectra to control endpoint of process

Methods and systems for using a time-series of spectra to identify endpoint of an etch process. One method includes accessing a virtual carpet that is formed from a time-series of spectra for the etch process collected during a training operation. ... Lam Research Corporation

06/28/18 / #20180182607

High power low pressure uv bulb with plasma resistant coating

An envelope of an ultraviolet (uv) bulb comprises a tube of uv transmissive material configured to contain a uv emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ald) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ald aluminum oxide coating. ... Lam Research Corporation

06/21/18 / #20180175819

Systems and methods for providing shunt cancellation of parasitic components in a plasma reactor

Systems and methods for negating an impedance associated with parasitic capacitance are described. One of the systems includes a plasma chamber having a housing. ... Lam Research Corporation

06/21/18 / #20180175161

Method for providing a low-k spacer

A method for forming semiconductor devices with spacers is provided. Sico spacers are formed on sides of features. ... Lam Research Corporation

06/21/18 / #20180174901

Chamber conditioning for remote plasma process

The methods, systems and apparatus described herein relate to chamber conditioning for remote plasma processes, in particular remote nitrogen-based plasma processes. Certain implementations of the disclosure relate to remote plasma inhibition processes for feature fill that include chamber conditioning. ... Lam Research Corporation

06/21/18 / #20180174879

Reducing temperature transition in a substrate support

A temperature controller for a substrate processing system includes an interface configured to receive a processing temperature corresponding to a desired processing temperature of a substrate. The temperature controller includes a thermal control element controller configured to selectively control a thermal control element to adjust a temperature of a substrate support. ... Lam Research Corporation

06/21/18 / #20180174870

Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead

A substrate processing system for selectively etching a substrate includes a first chamber and a second chamber. A first gas delivery system supplies an inert gas species to the first chamber. ... Lam Research Corporation

06/21/18 / #20180174860

Designer atomic layer etching

Methods for evaluating synergy of modification and removal operations for a wide variety of materials to determine process conditions for self-limiting etching by atomic layer etching are provided herein. Methods include determining the surface binding energy of the material, selecting a modification gas for the material where process conditions for modifying a surface of the material generate energy less than the modification energy and greater than the desorption energy, selecting a removal gas where process conditions for removing the modified surface generate energy greater than the desorption energy to remove the modified surface but less than the surface binding energy of the material to prevent sputtering, and calculating synergy to maximize the process window for atomic layer etching.. ... Lam Research Corporation

06/21/18 / #20180174858

Technique to deposit sidewall passivation for high aspect ratio cylinder etch

Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. ... Lam Research Corporation

06/21/18 / #20180174804

Compression member for use in showerhead electrode assembly

A compression member for use in a showerhead electrode assembly of a capacitively coupled plasma chamber. The member applies a compression force to a portion of a film heater adjacent a power supply boot on an upper surface of a thermal control plate and is located between the thermal control plate and a temperature-controlled top plate. ... Lam Research Corporation

06/21/18 / #20180171473

Conical wafer centering and holding device for semiconductor processing

A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. ... Lam Research Corporation

06/14/18 / #20180166312

Electrostatically clamped edge ring

An edge ring for use in a plasma processing chamber with a chuck is provided. An edge ring body has a first surface to be placed over and facing the chuck, wherein the first surface forms a ring around an aperture. ... Lam Research Corporation

06/14/18 / #20180166307

Integrated substrate defect detection using precision coating

Apparatuses and methods for improved substrate defect detection is provided. Substrate defects may be detected, possibly with defect detection equipment such as laser metrology equipment. ... Lam Research Corporation

06/14/18 / #20180166304

Ion injector and lens system for ion beam milling

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. ... Lam Research Corporation

06/14/18 / #20180166300

Point-of-use mixing systems and methods for controlling temperatures of liquids dispensed at a substrate

A liquid dispensing system for treating a substrate is provided and includes a flow controller, pressure regulator, mixing node, liquid mixer, temperature sensor, n dispensers, and system controller. The flow controller receives and controls a flow rate of a first liquid. ... Lam Research Corporation

06/14/18 / #20180166256

Multi-radiofrequency impedance control for plasma uniformity tuning

Circuits, methods, chambers, systems, and computer programs are presented for processing wafers. A wafer processing apparatus includes top and bottom electrodes inside a processing chamber; a first, second, third, and fourth radio frequency (rf) power sources; and one or more resonant circuits. ... Lam Research Corporation

06/14/18 / #20180163305

Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. ... Lam Research Corporation

06/14/18 / #20180163302

Multi-station plasma reactor with rf balancing

Apparatuses for multi-station semiconductor deposition operations with rf power frequency tuning are disclosed. The rf power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. ... Lam Research Corporation

06/07/18 / #20180158716

Pad raising mechanism in wafer positioning pedestal for semiconductor processing

An assembly used in a process chamber for depositing a film on a wafer. A pedestal assembly includes a pedestal movably mounted to a main frame. ... Lam Research Corporation

06/07/18 / #20180158692

Apparatus for achieving ultra-high selectivity while etching silicon nitride

Apparatuses for processing substrates are provided herein. Apparatuses include a plasma etch chamber having a showerhead and pedestal for holding a substrate having silicon nitride, at least one outlet for coupling to a vacuum, a solid non-functional silicon source, and a plasma generator. ... Lam Research Corporation

06/07/18 / #20180157161

Design layout pattern proximity correction through fast edge placement error prediction

Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (ifpf) within the feature during the etch operation. ... Lam Research Corporation

06/07/18 / #20180156489

Air cooled faraday shield and methods for using the same

A chamber is provided. The chamber includes a faraday shield positioned above a substrate support of the chamber. ... Lam Research Corporation

05/31/18 / #20180151503

Interlevel conductor pre-fill utilizing selective barrier deposition

A substrate is provided having a dual damascene structure formed within a dielectric material over the substrate. The dual damascene structure includes a trench and an opening formed to extend from a bottom of the trench to an underlying conductive material, with the underlying conductive material exposed at a bottom of the opening. ... Lam Research Corporation

05/31/18 / #20180151386

Method for generating vertical profiles in organic layer etches

A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. ... Lam Research Corporation

05/31/18 / #20180151331

Universal non-invasive chamber impedance measurement system and associated methods

A system is disclosed for measuring an impedance of a plasma processing chamber. The system includes a radiofrequency signal generator configured to output a radiofrequency signal based on a frequency setpoint and provide an indication of an actual frequency of the radiofrequency signal, where the actual frequency can be different than the frequency setpoint. ... Lam Research Corporation

05/31/18 / #20180148835

Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating

A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.. ... Lam Research Corporation

05/24/18 / #20180144977

Staircase encapsulation in 3d nand fabrication

Methods and apparatuses for depositing an encapsulation layer over a staircase structure during fabrication of a 3d nand structure to prevent degradation of an oxide-oxide interface and to prevent punchthrough of a wordline are provided. The encapsulation layer is a carbon-containing conformal film deposited over a staircase structure of alternating oxide and nitride layers prior to depositing oxide over the staircase structure.. ... Lam Research Corporation

05/24/18 / #20180144965

Buffer station with single exit-flow direction

A buffer for use in semiconductor processing tools is disclosed. The buffer may be used to temporarily store wafers after processing operations are performed on those wafers. ... Lam Research Corporation

05/24/18 / #20180144909

Plasma etching device with plasma etch resistant coating

A method for coating a part body for use in a plasma processing chamber is provided. The part body is received into a chamber. ... Lam Research Corporation

05/24/18 / #20180144906

Methods for processing substrates using small plasma chambers

A plasma processing method is provided. The method includes receiving a substrate in a substrate support that is configured to be movable along a linear path. ... Lam Research Corporation

05/24/18 / #20180144903

Inter-electrode gap variation methods for compensating deposition non-uniformity

Methods and systems for depositing material layers with gap variation between film deposition operations. One method includes depositing a material layer over a substrate. ... Lam Research Corporation

05/24/18 / #20180142374

Method and apparatus for dynamic current distribution control during electroplating

A method of electroplating a metal on a cathodically biased wafer substrate employs an electroplating apparatus having a main anode, an auxiliary electrode and an ionic current collimator, where the ionic current collimator is configured to direct ionic current that is generated by the main anode from a periphery of a plating vessel to its center. During electroplating, in a first electroplating stage (e.g., when terminal effect is pronounced), the metal is plated onto the wafer while the auxiliary electrode is cathodically biased; and in a second electroplating stage (e.g., when terminal effect subsides), the metal is plated onto the wafer while the auxiliary electrode is anodically biased. ... Lam Research Corporation

05/17/18 / #20180138405

Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100° c. ... Lam Research Corporation

05/17/18 / #20180138069

Edge ring centering method using ring dynamic alignment data

A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a plurality of first positions of the edge ring on the robot prior to being placed onto the substrate support and determine a plurality of second positions of the edge ring on the robot subsequent to being retrieved from the substrate support. ... Lam Research Corporation

05/17/18 / #20180138040

Self-aligned multi-patterning process flow with ald gapfill spacer mask

Methods and apparatuses for forming symmetrical spacers for self-aligned multiple patterning processes are described herein. Methods include depositing gapfill material by atomic layer deposition over a patterned substrate including core material and a target layer, planarizing substrate, and etching the core material to form symmetrical spacers. ... Lam Research Corporation

05/17/18 / #20180138036

Method for high modulus ald sio2 spacer

Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. ... Lam Research Corporation

05/17/18 / #20180138028

Selective inhibition in atomic layer deposition of silicon-containing films

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. ... Lam Research Corporation

05/17/18 / #20180138021

Plasma light up suppression

A method for suppressing arcing in helium distribution channels of an electrostatic chuck in a plasma processing chamber, wherein the electrostatic chuck is connected to a voltage source for providing a chucking voltage and wherein the plasma processing chamber comprises a process gas source, and a plasma power source for transforming the process gas into a plasma is provided. A gas is flowed through the helium distribution channels of an electrostatic chuck to a back side of a wafer. ... Lam Research Corporation

05/10/18 / #20180130696

Wafer positioning pedestal for semiconductor processing

An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. ... Lam Research Corporation

05/10/18 / #20180130690

Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control

A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. ... Lam Research Corporation

05/10/18 / #20180130689

Electrostatic chuck including clamp electrode assembly forming portion of faraday cage for rf delivery and associated methods

A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. ... Lam Research Corporation

05/10/18 / #20180130640

Active showerhead

An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. ... Lam Research Corporation

05/10/18 / #20180127868

Coating system and method for coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus

A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ald) or molecular layer deposition (mld) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which include the ald or mld barrier coating are configured to be contacted by a process gas and/or fluid during a semiconductor substrate processing process wherein the ald or mld barrier coating protects the underlying fluid wetted surfaces from erosion and/or corrosion.. ... Lam Research Corporation

05/10/18 / #20180127864

Ultra-low defect part process

A method for removing and preventing defects on surfaces of a component of a substrate processing chamber includes loading the component into a vacuum chamber and, with the component loaded within the vacuum chamber, baking the component at a baking temperature during a first predetermined period to remove water and defects from the surfaces of the component, and purging the component within the vacuum chamber during at least one second predetermined period to remove the defects from the vacuum chamber.. . ... Lam Research Corporation

05/03/18 / #20180122685

Planar substrate edge contact with open volume equalization pathways and side containment

A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. ... Lam Research Corporation

05/03/18 / #20180122633

Carrier plate for use in plasma processing systems

A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. ... Lam Research Corporation

05/03/18 / #20180119305

Process for optimizing cobalt electrofill using sacrificial oxidants

Embodiments herein relate to methods, apparatus, and systems for electroplating metal into recessed features using a superconformal fill mechanism that provides relatively faster plating within a feature and relatively slower plating in the field region. Moreover, within the feature, plating occurs faster toward the bottom of the feature compared to the top of the feature. ... Lam Research Corporation

04/19/18 / #20180108532

Silicon oxide silicon nitride stack ion-assisted etch

A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. ... Lam Research Corporation

04/19/18 / #20180108531

High aspect ratio etch

A method for etching a layer in a processing chamber is provided. A plurality of cycles is provided, where each cycle comprises a deposition phase, a clearing phase, and an etching phase. ... Lam Research Corporation

04/19/18 / #20180108529

Integrated direct dielectric and metal deposition

Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., sio2/tin, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a omom stack with many layers. Conductor and dielectric film deposition of a stack of at least 20 conductor/dielectric film pairs in the same processing tool or chamber, without breaking vacuum between the film depositions, such that there is no substantial cross-contamination between the conductor and dielectric film depositions, can be achieved.. ... Lam Research Corporation

04/19/18 / #20180106371

Edge seal for lower electrode assembly

An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes an elastomeric band configured to be arranged within the groove, the elastomeric band having an annular upper surface, an annular lower surface, an inner surface, and an outer surface. ... Lam Research Corporation

04/12/18 / #20180102257

Method for selectively etching silicon oxide with respect to an organic mask

A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant rf power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed rf power, which forms the etch phase gas into a plasma, and stopping the etch phase.. ... Lam Research Corporation

04/12/18 / #20180102253

Method for selectively etching with reduced aspect ratio dependence

A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. ... Lam Research Corporation

04/12/18 / #20180102245

Method for depositing ald films using halide-based precursors

A method of depositing ald films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (peald) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ald) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ald oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.. . ... Lam Research Corporation

04/12/18 / #20180102236

Cobalt etch back

Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. ... Lam Research Corporation

04/12/18 / #20180100885

Identifying components associated with a fault in a plasma system

A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. ... Lam Research Corporation

04/05/18 / #20180097520

Frequency and match tuning in one state and frequency tuning in the other state

Systems and methods for frequency and match tuning in one state s1 and frequency tuning in another state s2 are described. The systems and methods include determining one or more variables for the states s1 and s2, and tuning a frequency for the state s1 of a radio frequency (rf) generator based on the one or more variables.. ... Lam Research Corporation

04/05/18 / #20180096886

Composite dielectric interface layers for interconnect structures

Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of al, si, and ge, and at least one element selected from the group consisting of o, n, and c. ... Lam Research Corporation

04/05/18 / #20180096879

Spin chuck including edge ring

Apparatus for treating a substrate includes a stationary plate assembly including liquid nozzles to direct liquid at an edge of the substrate during treatment. A chuck assembly includes a chuck body arranged below and radially outside of the stationary plate assembly and rotatable relative to the stationary plate assembly. ... Lam Research Corporation

04/05/18 / #20180096842

Remote plasma based deposition of graded or multi-layered silicon carbide film

Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. ... Lam Research Corporation

03/29/18 / #20180090363

Lift pin holder with spring retention for substrate processing systems

A lift pin holder assembly includes a lift pin holder including a central bore defining a first groove arranged on a radially inner surface of the central bore. The lift pin holder is made of a non-metallic material. ... Lam Research Corporation

03/29/18 / #20180090334

Methods and systems for advanced ion control for etching processes

A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. ... Lam Research Corporation

03/29/18 / #20180088031

Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system

A measurement system to measure a concentration of neutral gas species above a substrate includes a substrate support located in a chamber to support a substrate. A plasma source generates plasma in the chamber above the substrate. ... Lam Research Corporation

03/22/18 / #20180082886

Temporally pulsed and kinetically modulated cvd dielectrics for gapfill applications

A method for performing temporally pulsed chemical vapor deposition (cvd) is provided, including: providing a first reactant configured to adsorb on exposed surfaces of a substrate in a self-limiting manner, the first reactant being provided at a partial pressure so that the first reactant diffuses into a gap feature of the substrate; performing a first purge operation, the first purge operation being configured to partially purge the first reactant, so that gas phase first reactant species remain in the gap feature; providing a second reactant to the process chamber, the second reactant being configured to react with the first reactant to form a film product, including reaction of the provided second reactant with the adsorbed first reactant species, and reaction of the provided second reactant with the gas phase first reactant species in the gap feature; performing a second purge operation.. . ... Lam Research Corporation

03/22/18 / #20180082826

Method and process of implementing machine learning in complex multivariate wafer processing equipment

Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. ... Lam Research Corporation

03/22/18 / #20180082822

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (rf) generator that is configured to generate an rf signal, an impedance matching circuit coupled to the rf generator for receiving the rf signal to generate a modified rf signal, and a plasma chamber. ... Lam Research Corporation

03/22/18 / #20180080140

Gap fill process stability monitoring of an electroplating process using a potential-controlled exit step

Various embodiments herein relate to methods and apparatus for electroplating metal on a substrate. In many cases, an electroplating process may be monitored to ensure that it is operating within a pre-defined processing window. ... Lam Research Corporation

03/15/18 / #20180076100

Systems and methods for detection of plasma instability by electrical measurement

A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma processing operation. ... Lam Research Corporation

03/15/18 / #20180076045

Methods and systems for advanced ion control for etching processes

A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. ... Lam Research Corporation

03/15/18 / #20180076028

Systems and methods for uv-based suppression of plasma instability

A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. ... Lam Research Corporation

03/15/18 / #20180073137

Systems and methods for reducing effluent build-up in a pumping exhaust system

A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing substrate treatment on the substrate in the processing chamber; evacuating reactants from the processing chamber using a pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.. ... Lam Research Corporation

03/08/18 / #20180068879

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. ... Lam Research Corporation

03/08/18 / #20180068834

Using modeling to determine ion energy associated with a plasma system

Systems and methods for determining ion energy are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (v&i). ... Lam Research Corporation

03/08/18 / #20180068833

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. ... Lam Research Corporation

03/08/18 / #20180068754

Reduction of surface and embedded substrate charge by controlled exposure to vacuum ultraviolet (vuv) light in low-oxygen environment

A system for reducing surface and embedded charge in a substrate includes a substrate support configured to support a substrate. A vacuum ultraviolet (vuv) assembly is arranged adjacent to the substrate and includes a housing and a vuv lamp that is connected to the housing and that generates and directs ultraviolet (uv) light at the substrate. ... Lam Research Corporation

03/08/18 / #20180065274

Method and apparatus for forming ceramic parts in hot isostatic press using ultrasonics

A method for forming a ceramic object from a ceramic powder is provided. The ceramic powder is placed in a press. ... Lam Research Corporation

03/01/18 / #20180061663

Continuous and pulsed rf plasma for etching metals

Methods for etching tungsten and other metal or metal-containing films using a nitrogen-containing etchant gas are provided. The methods involve exposing the film to a continuous wave (cw) plasma and switching to a pulsed plasma toward the end of the etching operation. ... Lam Research Corporation

03/01/18 / #20180061659

Silicon-based deposition for semiconductor processing

A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. ... Lam Research Corporation

03/01/18 / #20180061650

High dry etch rate materials for semiconductor patterning applications

Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor and oxidizing plasma; (2) exposing the substrate to the plasma at a radio frequency power density of less than about 0.2 w/cm2; and (3) exposing the substrate to the plasma produced from a process gas having an argon to oxidant ratio of at least about 1:12.. ... Lam Research Corporation

03/01/18 / #20180061628

Selective atomic layer deposition for gapfill using sacrificial underlayer

Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate to a deposition precursor such that adsorbed precursor on the sacrificial layer is removed in an etching operation for etching the sacrificial layer prior to exposing the substrate to a second reactant and a plasma to form a film.. ... Lam Research Corporation

03/01/18 / #20180057940

Rotary friction welded blank for pecvd heated showerhead

A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. A showerhead assembly includes a stem, face plate and back plate wherein the stem is rotary friction welded to the back plate. ... Lam Research Corporation

02/22/18 / #20180053660

Method for preventing line bending during metal fill process

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions between metal deposited onto sidewalls of a feature. Methods are suitable for deposition into v-shaped features.. ... Lam Research Corporation

02/22/18 / #20180053632

Computation of statistics for statistical data decimation

Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (rf) system, propagating the variable through a model of the rf system, and counting an output of the model for the variable to generate a count. ... Lam Research Corporation

02/22/18 / #20180053629

Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment

A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. ... Lam Research Corporation

02/15/18 / #20180047645

Suppressing interfacial reactions by varying the wafer temperature throughout deposition

Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. ... Lam Research Corporation

02/15/18 / #20180047598

Platform architecture to improve system productivity

A loading station for a substrate processing system includes first and second vertically-stacked loading stations. The first loading station includes a first airlock volume and first and second valves arranged at respective ends of the first loading station. ... Lam Research Corporation

02/15/18 / #20180047596

Apparatus and radiant heating plate for processing wafer-shaped articles

An apparatus for processing wafer-shaped articles includes a rotary chuck adapted to hold a wafer-shaped article of a predetermined diameter thereon. A radiant heating plate faces a wafer-shaped article when positioned on the rotary chuck. ... Lam Research Corporation

02/15/18 / #20180047594

Method for conditioning silicon part

A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° c. ... Lam Research Corporation

02/15/18 / #20180047593

Method and apparatus for processing wafer-shaped articles

A method for drying wafer-shaped articles comprises rotating a wafer-shaped article of a predetermined diameter on a rotary chuck, and dispensing a drying liquid onto one side of the wafer-shaped article. The drying liquid comprises greater than 50 mass % of an organic solvent. ... Lam Research Corporation

02/15/18 / #20180047548

Differentially pumped reactive gas injector

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. ... Lam Research Corporation

02/15/18 / #20180047543

Systems and methods for rf power ratio switching for iterative transitioning between etch and deposition processes

A system is provided and includes a first linear motor, a first separator support assembly, and a controller. The first linear motor includes a shaft that is linearly driven based on a current supplied to the first linear motor. ... Lam Research Corporation

02/15/18 / #20180044791

Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. ... Lam Research Corporation

02/15/18 / #20180044790

Additive for ald deposition profile tuning in gap features

A method for performing atomic layer deposition (ald) on a substrate is provided, including: exposing the substrate to a first reactant and an additive simultaneously, the first reactant and the additive being configured to adsorb on exposed surfaces of the substrate, a partial pressure of the additive being configured so that adsorption of the additive in a gap feature of the substrate decreases as depth increases in the gap feature; after exposing the substrate to the first reactant and the additive, exposing the substrate to a second reactant, the second reactant configured to react with the adsorbed first reactant to form a thin film product, the second reactant configured to react with the adsorbed additive to remove the adsorbed additive from the substrate surface.. . ... Lam Research Corporation

02/08/18 / #20180040502

Apparatus for processing wafer-shaped articles

An apparatus for processing wafer-shaped articles comprises a rotary chuck having a series of contact elements surrounding a wafer-shaped article when mounted on the rotary chuck. A non-rotating plate is positioned interiorly of the series of contact elements. ... Lam Research Corporation

02/08/18 / #20180040492

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. ... Lam Research Corporation

02/08/18 / #20180040479

Partial net shape and partial near net shape silicon carbide chemical vapor deposition

A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a first shape, machining the substrate into a second shape, the second shape having dimensions corresponding to a desired final shape of the structure, depositing a layer of material on the substrate, machining first selected portions of the layer of material to expose the substrate within the layer of material, removing remaining portions of the substrate, and machining second selected portions of the layer of material into the structure having the desired final shape without machining the surfaces of the structure that are exposed to plasma during processing.. . ... Lam Research Corporation

02/08/18 / #20180040460

Methods and systems for monitoring plasma processing systems and advanced process and tool control

Method and systems for operating a plasma processing chamber are provided. One example method includes processing a substrate in the plasma processing chamber under vacuum. ... Lam Research Corporation

02/08/18 / #20180038009

Methods and apparatuses for electroplating and seed layer detection

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. ... Lam Research Corporation

02/01/18 / #20180033672

Substrate support with increasing areal density and corresponding method of fabricating

A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. ... Lam Research Corporation

02/01/18 / #20180033657

Pressure purge etch method for etching complex 3-d structures

A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 torr to 10 torr for the selective dry etch process; c) selectively etching a first film material of a substrate relative to a second film material of the substrate in the processing chamber during a first period; d) lowering pressure in the processing chamber to a second predetermined pressure that is less than the first predetermined pressure by a factor greater than or equal to 4; and e) purging the processing chamber at the second predetermined pressure for a second period.. . ... Lam Research Corporation

02/01/18 / #20180033635

Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch)

Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor substrate.. ... Lam Research Corporation

02/01/18 / #20180033622

Doped ald films for semiconductor patterning applications

Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask, and using the spacer mask to etch a target layer on the substrate. ... Lam Research Corporation

02/01/18 / #20180033596

Sub-pulsing during a state

A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. ... Lam Research Corporation

02/01/18 / #20180032062

Systems for removing and replacing consumable parts from a semiconductor process module in situ

A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. ... Lam Research Corporation

01/25/18 / #20180025930

Control of wafer bow in multiple stations

A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency rf signal and another circuit that provides a high frequency rf signal. ... Lam Research Corporation

01/25/18 / #20180025893

Edge exclusion control with adjustable plasma exclusion zone ring

Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. ... Lam Research Corporation

01/25/18 / #20180025891

Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge rf generators

Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an rf signal to a main electrode within the plasma chamber. ... Lam Research Corporation

01/18/18 / #20180019387

Dry plasma etch method to pattern mram stack

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. ... Lam Research Corporation

01/18/18 / #20180019142

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. ... Lam Research Corporation

01/18/18 / #20180018418

Segmenting a model within a plasma system

Systems and methods for segmenting an impedance matching model are described. One of the methods includes receiving the impedance matching model. ... Lam Research Corporation

01/11/18 / #20180012785

Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity

A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a first thickness, the second region has a second thickness, and the first thickness is greater than the second thickness.. ... Lam Research Corporation

01/11/18 / #20180012759

Tin oxide thin film spacers in semiconductor device manufacturing

Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). ... Lam Research Corporation

01/11/18 / #20180012733

Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. ... Lam Research Corporation

01/11/18 / #20180010250

Single ald cycle thickness control in multi-station substrate deposition systems

Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the first set of substrates by performing n cycles of film deposition. ... Lam Research Corporation

01/04/18 / #20180005867

Esc ceramic sidewall modification for particle and metals performance enhancements

A substrate support for a substrate processing system includes a baseplate and a ceramic layer arranged on the baseplate. The ceramic layer includes a lower surface, an upper surface configured to support a substrate, and sidewalls around a perimeter of the ceramic layer extending from the lower surface to the upper surface, and the ceramic layer comprises a first material. ... Lam Research Corporation

01/04/18 / #20180005865

End effector assembly for clean/dirty substrate handling

An end effector includes a body, a first tine, and a second tine. The body includes first, second, and third substrate support pads, the first substrate support pad defines a first height, the second substrate support pad defines a second height less than the first height, and the third substrate support pad defines a third height equal to the first height. ... Lam Research Corporation

01/04/18 / #20180005859

Method for reducing temperature transition in an electrostatic chuck

A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element to adjust the temperature of the substrate support device to a temperature value based on the temperature difference. The temperature value is not equal to the desired temperature for the substrate support device. ... Lam Research Corporation

01/04/18 / #20180005857

System and method for substrate support feed-forward temperature control based on rf power

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. ... Lam Research Corporation








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