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Mattson Technology Inc patents


Recent patent applications related to Mattson Technology Inc. Mattson Technology Inc is listed as an Agent/Assignee. Note: Mattson Technology Inc may have other listings under different names/spellings. We're not affiliated with Mattson Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "M" | Mattson Technology Inc-related inventors


Temperature control using temperature control element coupled to faraday shield

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. ... Mattson Technology Inc

Substrate breakage detection in a thermal processing system

Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. ... Mattson Technology Inc

Atomic layer etch process using plasma in conjunction with a rapid thermal activation process

A process for etching a film layer on a semiconductor wafer is disclosed. The process is particularly well suited to etching carbon containing layers, such as hardmask layers, photoresist layers, and other low dielectric films. ... Mattson Technology Inc

Systems and methods for workpiece processing

Systems and methods for processing workpieces, such as semiconductor workpieces are provided. One example embodiment is directed to a processing system for processing a plurality of workpieces. ... Mattson Technology Inc

Strip process for high aspect ratio structure

Processes for removing a mask layer (e.g., doped amorphous carbon mask layer) from a substrate with high aspect ratio structures are provided. In one example implementation, a process can include depositing a polymer layer on at least a portion of a top end of a high aspect ratio structure on a substrate. ... Mattson Technology Inc

Separation grid for plasma chamber

Separation grids for plasma processing apparatus are provided. In some embodiments, a plasma processing apparatus includes a plasma chamber. ... Mattson Technology Inc

Inductive plasma source

Methods and apparatus to provide efficient and scalable rf inductive plasma processing are disclosed. In some aspects, the coupling between an inductive rf energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. ... Mattson Technology Inc

Implanted photoresist stripping process

Processes for removing a photoresist from a substrate after, for instance, ion implantation are provided. In one example implementation, a process can include placing a substrate having a bulk photoresist and a crust formed on the bulk photoresist in a processing chamber. ... Mattson Technology Inc

Inductively coupled plasma source for plasma processing

Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. ... Mattson Technology Inc

Pre-heat processes for millisecond anneal system

Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. ... Mattson Technology Inc

Variable pattern separation grid for plasma chamber

Systems, methods, and apparatus for processing a substrate in a plasma processing apparatus using a variable pattern separation grid are provided. In one example implementation, a plasma processing apparatus can have a plasma chamber and a processing chamber separated from the plasma chamber. ... Mattson Technology Inc

Nitrogen injection for arc lamps

Systems and methods for reducing contamination of one or more arc lamps are provided. One example implementation is directed to a millisecond anneal system. ... Mattson Technology Inc

Preheat processes for millisecond anneal system

Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. ... Mattson Technology Inc

Substrate support in a millisecond anneal system

Systems and methods for substrate support in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system includes a processing chamber having a wafer support plate. ... Mattson Technology Inc

07/06/17 / #20170194177

Substrate breakage detection in a thermal processing system

Apparatus, systems, and processes for substrate breakage detection in a thermal processing system are provided. In one example implementation, a process can include: accessing data indicative of a plurality of temperature measurements for a substrate, the plurality of measurements obtained during a cool down period of a thermal process; estimating one or more metrics associated with a cooling model based at least in part on the data indicative of the plurality of temperature measurements; and determining a breakage detection signal based at least in part on the one or more metrics associated with the cooling model. ... Mattson Technology Inc

07/06/17 / #20170194175

Chamber wall heating for a millisecond anneal system

Systems and methods for reducing contamination on reflective mirrors disposed on chamber walls in a millisecond anneal system are provided. In one example implementation, the reflective mirrors can be heated by one or more of (1) heating the fluid in the closed fluid system for regulating the temperature of the reflective mirrors; (2) electrical cartridge heater(s) or heater ribbon(s) attached to the reflective mirrors; and/or (3) use of lamp light inside the chamber.. ... Mattson Technology Inc

07/06/17 / #20170194163

Features for improving process uniformity in a millisecond anneal system

Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. ... Mattson Technology Inc

07/06/17 / #20170194133

Electrode tip for arc lamp

Electrode tips for arc lamps for use in, for instance, a millisecond anneal system are provided. In one example implementation, an electrode for an arc lamp can have an electrode tip. ... Mattson Technology Inc

07/06/17 / #20170191897

Fluid leakage detection for a millisecond anneal system

Systems and methods for detecting a fluid leak associated with fluid cooled components in a millisecond anneal system are provided. In one example implementation, a millisecond anneal system can include a processing chamber having one or more fluid cooled components. ... Mattson Technology Inc

07/06/17 / #20170191759

Gas flow control for millisecond anneal system

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.. ... Mattson Technology Inc








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