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Micron Technology Inc patents (2014 archive)


Recent patent applications related to Micron Technology Inc. Micron Technology Inc is listed as an Agent/Assignee. Note: Micron Technology Inc may have other listings under different names/spellings. We're not affiliated with Micron Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "M" | Micron Technology Inc-related inventors


12/25/14 / #20140380288

Utilizing special purpose elements to implement a fsm

Apparatus, systems, and methods for a compiler are described. One such compiler generates machine code corresponding to a set of elements including a general purpose element and a special purpose element. ... Micron Technology Inc

12/25/14 / #20140380123

Memory quality monitor based compensation method and apparatus

In one embodiment, an encoder reads a set of data from memory cells to obtain retrieved data influenced by one or more distortion mechanisms as a result of having been stored. A quality metric is generated responsive to the retrieved data that changes in value responsive to differences between the user data and the associated retrieved data. ... Micron Technology Inc

12/25/14 / #20140377953

Method and apparatus for simultaneously removing multiple conductive materials from microelectronic substrates

A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microelectronic substrate having first and second different conductive materials. ... Micron Technology Inc

12/25/14 / #20140377919

Cmos fabrication

A method of manufacturing a memory device includes an nmos region and a pmos region in a substrate. A first gate is defined within the nmos region, and a second gate is defined in the pmos region. ... Micron Technology Inc

12/25/14 / #20140377886

Method of manufacturing semiconductor device including grinding semiconductor wafer

A method of manufacturing a semiconductor device according to one embodiment includes: preparing a semiconductor water which is partitioned into a plurality of first semiconductor chips, the plurality of first semiconductor chips including a first group of first semiconductor chips and a second group of first semiconductor chips; providing a second semiconductor chip over at least one of first semiconductor chips of the first group; providing a sealer on the first semiconductor chips of the second group; and grinding one face of the semiconductor wafer which is on the opposite side from a face on which the second semiconductor chip and the sealer are provided.. . ... Micron Technology Inc

12/25/14 / #20140376548

Encapsulation enabled pcie virtualisation

There is herein described a method for transmitting data packets from a first device through a switch to a second device. The method is performed at an intercepting device intermediate the first device and the switch device. ... Micron Technology Inc

12/25/14 / #20140376325

Semiconductor device having a reduced footprint of wires connecting a dll circuit with an input/output buffer

An apparatus includes a clock terminal configured to receive an external clock signal, a clock generator configured to generate an internal clock signal in response to the external clock signal, first and second output circuits each coupled to the clock generator, a first clock line coupled between the clock generator and the first output circuit, and the second clock line coupled between the clock generator and the second output circuit. The first clock line represents a first capacitance and a first resistance while the second clock line represents a second capacitance and a second resistance. ... Micron Technology Inc

12/25/14 / #20140376313

Apparatuses and methods for limiting string current in a memory

Apparatuses, current control circuits, and methods for limiting string current in a memory are described. An example apparatus includes a memory cell string including a memory cell. ... Micron Technology Inc

12/25/14 / #20140375366

Measurement initialization circuitry

Measurement initialization circuitry is described. Propagation of a start signal through a variable delay line may be stopped by either of two stop signals. ... Micron Technology Inc

12/25/14 / #20140375348

Short-checking methods

In an embodiment, a short-checking method includes charging a data line to an initial voltage while activating a memory cell coupled to the data line, allowing the data line to float while continuing to activate the memory cell, sensing a resulting voltage on the data line after a certain time, and determining whether a short exists in response to a level of the resulting voltage.. . ... Micron Technology Inc

12/25/14 / #20140375329

Apparatus and methods for delay line testing

This disclosure relates to delay line test circuits and methods. In one aspect, an integrated circuit (ic) can include a plurality of delay lines, a selection circuit, a delay comparison circuit, and a control circuit. ... Micron Technology Inc

12/25/14 / #20140375212

Multi-junction solid state transducer devices for direct ac power and associated systems and methods

Multi junction solid-state transducer (sst) devices and associated systems and methods are disclosed herein. In several embodiments, for example, an sst system can include a first multi-junction sst chain having a first drive voltage, a first p-contact, and a first n-contact, and a second multi junction sst chain having a second drive voltage, a second p-contact, and a second n-contact. ... Micron Technology Inc

12/25/14 / #20140374833

Memory arrays

The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over the bottom portions. ... Micron Technology Inc

12/25/14 / #20140374811

Methods of forming semiconductor device structures and related semiconductor devices and structures

Methods of forming semiconductor devices, memory cells, and arrays of memory cells include forming a liner on a conductive material and exposing the liner to a radical oxidation process to densify the liner. The densified liner may protect the conductive material from substantial degradation or damage during a subsequent patterning process. ... Micron Technology Inc

12/25/14 / #20140374685

Phase change current density control structure

A phase change memory element and method of forming the same. The memory element includes first and second electrodes. ... Micron Technology Inc

12/25/14 / #20140373880

Apparatus for contamination removal using magnetic particles

Methods and apparatus are provided for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing a composition of magnetic particles dispersed within a base fluid to remove contaminants from a surface of the substrate.. . ... Micron Technology Inc

12/18/14 / #20140372830

Apparatuses and methods for error correction

This disclosure relates to error correction circuitry. In one aspect, an error correction circuit can serially receive a digit stream and parse the digit stream into substrings of a predetermined length of digits. ... Micron Technology Inc

12/18/14 / #20140372713

Memory tile access and selection patterns

In one embodiment, an apparatus, such as a memory device, is disclosed. The apparatus includes multiple memory tiles and selection circuitry. ... Micron Technology Inc

12/18/14 / #20140370684

Methods for forming sub-resolution features in semiconductor devices

Methods of forming semiconductor devices and features in semiconductor device structures include conducting an anti-spacer process to remove portions of a first mask material to form first openings extending in a first direction. Another anti-spacer process is conducted to remove portions of the first mask material to form second openings extending in a second direction at an angle to the first direction. ... Micron Technology Inc

12/18/14 / #20140369146

Systems, circuits, and methods for charge sharing

Systems, circuits, and methods are disclosed for charge sharing. In one such example system, a first line is configured to be driven to a first voltage representative of data to be placed on the first line and then precharged to a first precharge voltage. ... Micron Technology Inc

12/18/14 / #20140369143

Apparatuses and methods for mapping memory addresses to redundant memory

Apparatuses and methods related to redundant memory and mapping memory addresses to redundant memory are disclosed. An example apparatus includes a plurality of memory sections and a plurality of redundant memory sections. ... Micron Technology Inc

12/18/14 / #20140369138

Non-volatile memory, system, and method

A non volatile memory device includes a first buffer register configured to receive and store the data to be stored into the memory device provided via a memory bus. A command window is activatable for interposing itself for access to a memory matrix between the first buffer element and the memory matrix. ... Micron Technology Inc

12/18/14 / #20140369130

Local self-boost using a plurality of cut-off cells on a single side of a string of memory cells

Methods for local self-boost of a selected memory cell channel, memory devices, and systems are disclosed. One such method generates a cut-off channel under each of a plurality of memory cells on one of either a source side or a drain side of a selected memory cell.. ... Micron Technology Inc

12/18/14 / #20140369117

Multiple step programming in a memory device

Method of operating a memory include programming a memory cell and reading the memory cell to determine a programmed threshold voltage of the memory cell. If the programmed threshold voltage is within a threshold voltage distribution of a plurality of threshold voltage distributions, the memory cell is reprogrammed, and if the programmed threshold voltage is not within a threshold voltage distribution of the plurality of threshold voltage distributions, the memory cell is allowed to remain at the programmed threshold voltage.. ... Micron Technology Inc

12/18/14 / #20140369116

Shielded vertically stacked data line architecture for memory

Apparatuses and methods are disclosed, including an apparatus that includes first and second strings of vertically stacked memory cells, and first and second pluralities of vertically stacked data lines. A data line of the first plurality of data lines is coupled to the first string through a first select device. ... Micron Technology Inc

12/18/14 / #20140369107

Structures for resistance random access memory and methods of forming the same

Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. ... Micron Technology Inc

12/18/14 / #20140368244

Apparatuses and methods for duty cycle adjustment

Apparatuses and methods for duty cycle adjustment are disclosed herein. An example apparatus may include a node, a phase mixer, and a duty cycle adjuster circuit. ... Micron Technology Inc

12/18/14 / #20140368123

Light-emitting metal-oxide-semiconductor devices and associated systems, devices, and methods

Various embodiments of solid state transducer (“sst”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (mos) capacitor, an active region operably coupled to the mos capacitor, and a bulk semiconductor material operably coupled to the active region. ... Micron Technology Inc

12/18/14 / #20140367844

Underfill-accommodating heat spreaders and related semiconductor device assemblies and methods

Heat spreaders for dissipating heat from semiconductor devices comprise a contact surface located within a recess on an underside of the heat spreader, the contact surface being configured to physically and thermally attach to a semiconductor device, and a trench extending into the heat spreader adjacent to the contact surface sized and configured to receive underfill material extending from the semiconductor device into the trench. Related semiconductor device assemblies may include these heat spreader and methods may include physically and thermally attaching these heat spreaders to semiconductor devices such that underfill material extends from a semiconductor device into the trench.. ... Micron Technology Inc

12/18/14 / #20140367686

Ultrathin solid state dies and methods of manufacturing the same

Various embodiments of sst dies and solid state lighting (“ssl”) devices with sst dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a sst die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. ... Micron Technology Inc








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