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Microsemi Soc Corporation patents


Recent patent applications related to Microsemi Soc Corporation. Microsemi Soc Corporation is listed as an Agent/Assignee. Note: Microsemi Soc Corporation may have other listings under different names/spellings. We're not affiliated with Microsemi Soc Corporation, we're just tracking patents.

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Front to back resistive random access memory cells

A resistive random-access memory device formed on a semiconductor substrate includes an interlayer dielectric formed over the semiconductor substrate and includes a first via. A chemical-mechanical-polishing stop layer is formed over the interlayer dielectric. ... Microsemi Soc Corporation

Resistive random access memory cell

A resistive random access memory cell includes three resistive random access memory devices, each resistive random access memory device having an ion source layer and a solid electrolyte layer. The first and second resistive random access memory devices are connected in series such that either both ion source layers or both solid electrolyte layers are adjacent to one another. ... Microsemi Soc Corporation

Power supply glitch detector

A power supply glitch detector includes a sense node ac coupled to a power supply node on which voltage glitches having a magnitude of vglitch are to be detected. A sensing inverter has an input and an output, the input coupled to the sensing node, the sensing inverter having a trip voltage vtrip below which the output of the sensing inverter is at a voltage representing a logic high state and above which the output of the sensing inverter is at a voltage representing a logic low state. ... Microsemi Soc Corporation

Circuits and methods for preventing over-programming of reram-based memory cells

A method for preventing over-programming of resistive random access (reram) based memory cells in a reram memory array includes applying a programming voltage in a programming circuit path including a reram memory cell to be programmed, sensing programming current drawn by the reram cell while the programming voltage is applied across the memory cell, and decreasing the programming current as a function of a rise in programming current.. . ... Microsemi Soc Corporation

Three-transistor resistive random access memory cells

A reram cell array has having at least one row and one column includes first and second complementary bit lines for each row, a word line, a p-word line, and an n-word line for each column. A reram cell at each row and column of the array includes a first reram device, its first end connected to the first complementary bit line of its row, a p-channel transistor, its source connected to a second end of the first reram device, its drain connected to a switch node, its gate connected to the p-channel word line of its column, a second reram device, its first end connected to the second complementary bit line of its row, an n-channel transistor, its source connected to a second end of the second reram device, its drain connected to the switch node, its gate connected to the n-channel word line of its column.. ... Microsemi Soc Corporation

Low leakage reram fpga configuration cell

A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first reram device is connected to a first one of the bit lines. ... Microsemi Soc Corporation

Fpga ram blocks optimized for use as register files

A random access memory circuit adapted for use in a field programmable gate array integrated circuit device is disclosed. The fpga has a programmable array with logic modules and routing interconnects programmably coupleable to the logic modules and the ram circuit. ... Microsemi Soc Corporation

Apparatus and method to detect stall condition of a stepper motor

A method for detecting a stall condition in a stepper motor includes measuring stepper motor current, computing load angle of the motor, and detecting a stall condition if the load angle is more than 90 degrees.. . ... Microsemi Soc Corporation

Low leakage reram fpga configuration cell

A low-leakage resistive random access memory cell includes a complementary pair of bit lines and a switch node. A first reram device is connected to a first one of the bit lines. ... Microsemi Soc Corporation

Low leakage resistive random access memory cells and processes for fabricating same

A resistive random access memory device is formed in an integrated circuit between a first metal layer and a second metal layer and includes a first barrier layer disposed over the first metal layer, a tunneling dielectric layer disposed over the first barrier layer, a solid electrolyte layer disposed over the tunneling dielectric layer, an ion source layer disposed over the solid electrolyte layer, and a second barrier layer disposed over the ion source layer.. . ... Microsemi Soc Corporation

Apparatus and methods for in-application programming of flash-based programable logic devices

An architecture disposed in an integrated circuit for in-application programming of flash-based programmable logic devices includes a processor coupled to a processor system bus. An i/o peripheral is coupled to the processor over the system bus and is also coupled to an off-chip data source. ... Microsemi Soc Corporation

Hybrid phase locked loop having wide locking range

A digital phased lock loop includes a digital controlled oscillator configured to produce an output signal at an output signal frequency, and a phase comparator configured to compare the output signal or a signal derived from the output signal, with a reference signal at a reference signal frequency or a signal derived from the reference signal to produce a phase error signal. A first loop filter produces a first control signal for the digital controlled oscillator. ... Microsemi Soc Corporation

Circuit and method to detect failure of speed estimation/speed measurement of a multi-phase ac motor

A method for detecting failure of speed measurement of a multi-phase ac motor includes (1) sensing current drawn by the motor, (2) sensing voltage magnitude supplied to the motor, (3) measuring motor speed, (4) calculating motor speed, (5) determining whether the difference between the measured motor speed and the calculated motor speed is greater than a predetermined threshold, if the difference between the measured motor speed and the calculated motor speed is not greater than a predetermined threshold, repeating (1) through (5), if the difference between the measured motor speed and the calculated motor speed is greater than a predetermined threshold, indicating a fault, if a fault is indicated, performing a predetermined number of restart attempts, if the motor is successfully restarted, repeating (1) through (5), if the motor is not successfully restarted, indicating a restart failure.. . ... Microsemi Soc Corporation








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