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Nantero Inc patents


Recent patent applications related to Nantero Inc. Nantero Inc is listed as an Agent/Assignee. Note: Nantero Inc may have other listings under different names/spellings. We're not affiliated with Nantero Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "N" | Nantero Inc-related inventors


Sealed resistive change elements

Methods for scaling dimensions of resistive change elements, resistive change element arrays of scalable resistive change elements, and sealed resistive change elements are disclosed. According to some aspects of the present disclosure the methods for scaling dimensions of resistive change elements and the resistive change element arrays of scalable resistive change elements reduce the impact of overlapping materials on the switching characteristics of resistive change elements. ... Nantero Inc

Resistive change elements incorporating carbon based diode select devices

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-swcnt), semiconducting buckminsterfullerenes (such as c60 buckyballs), or semiconducting graphitic layers (layered graphene). ... Nantero Inc

Stacked three-dimensional arrays of two terminal nanotube switching devices

Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.. . ... Nantero Inc

Resistive change element arrays with in situ initialization

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. ... Nantero Inc

Nonvolatile nanotube switches and systems using same

A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. ... Nantero Inc

Two-terminal switching devices comprising coated nanotube elements

An improved switching material for forming a composite article over a substrate is disclosed. A first volume of nanotubes is combined with a second volume of nanoscopic particles in a predefined ration relative to the first volume of nanotubes to form a mixture. ... Nantero Inc

Methods for error correction with resistive change element arrays

Error correction methods for arrays of resistive change elements are disclosed. An array of resistive change elements is organized into a plurality of subsections. ... Nantero Inc

Methods for error correction with resistive change element arrays

Error correction methods for arrays of resistive change elements are disclosed. An array of resistive change elements is organized into a plurality of subsections. ... Nantero Inc

Microfluidic control surfaces using ordered nanotube fabrics

A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. ... Nantero Inc

Ddr compatible open array achitectures for resistive change element arrays

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. ... Nantero Inc

Methods for determining the resistive states of resistive change elements

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. ... Nantero Inc

Devices for determining the resistive states of resistive change elements

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. ... Nantero Inc

Circuits for determining the resistive states of resistive change elements

Devices and methods for determining resistive states of resistive change elements in resistive change element arrays are disclosed. According to some aspects of the present disclosure the devices and methods for determining resistive states of resistive change elements can determine resistive states of resistive change elements by sensing current flow. ... Nantero Inc

Methods for programming 1-r resistive change element arrays

Methods for reading and programming one or more resistive change elements within a 1-r resistive change element array are disclosed. These methods include using measurement and storage elements to measure the electrical response of one or more selected cells within an array and then comparing that stored electrical response to the electrical response of a reference element within the array to determine the resistive state of the one or more selected cells. ... Nantero Inc

10/26/17 / #20170309334

Methods for enhanced state retention within a resistive change cell

A method for improving the stability of a resistive change cell is disclosed. The stability of a resistive change memory cell-that is, the tendency of the resistive change memory cell to retain its programmed resistive state-may, in certain applications, be compromised if the cell is programmed into an unstable or metastable state. ... Nantero Inc

08/31/17 / #20170246561

Nanotube application deposition system for forming low defect nanotube fabrics

The present disclosure provides methods for removing defects nanotube application solutions and providing low defect, highly uniform nanotube fabrics. In one aspect, a degassing process is performed on a suspension of nanotubes to remove air bubbles present in the solution. ... Nantero Inc

08/10/17 / #20170226352

Nanotube solution treated with molecular additive, nanotube film having enhanced adhesion property, and methods for forming the nanotube solution and the nanotube film

The present disclosure provides a nanotube solution being treated with a molecular additive, a nanotube film having enhanced adhesion property due to the treatment of the molecular additive, and methods for forming the nanotube solution and the nanotube film. The nanotube solution includes a liquid medium, nanotubes in the liquid medium, and a molecular additive in the liquid medium, wherein the molecular additive includes molecules that provide source elements for forming a group iv oxide within the nanotube solution. ... Nantero Inc

07/27/17 / #20170210626

Low porosity nanotube fabric articles

A method for controlling density, porosity and/or gap size within a nanotube fabric layer is disclosed. In one aspect, this can be accomplished by controlling the degree of rafting in a nanotube fabric. ... Nantero Inc

07/13/17 / #20170200769

Resistive change element array using vertically oriented bit lines

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-swcnt), semiconducting buckminsterfullerenes (such as c60 buckyballs), or semiconducting graphitic layers (layered graphene). ... Nantero Inc

03/16/17 / #20170072431

Methods for arranging nanoscopic elements within networks, fabrics and films

A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. ... Nantero Inc

03/09/17 / #20170069846

Methods for forming nanotube fabric layers with increased density

Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. ... Nantero Inc

02/02/17 / #20170032839

Methods for programming and accessing ddr compatible resistive change element arrays

A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. ... Nantero Inc

01/05/17 / #20170005140

Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same

Inverter circuits and nand circuits comprising nanotube based fets and methods of making the same are described. Such circuits can be fabricating using field effect transistors comprising a source, a drain, a channel region, and a gate, wherein the first channel region includes a fabric of semiconducting nanotubes of a given conductivity type. ... Nantero Inc








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