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Oclaro Japan Inc patents (2015 archive)


Recent patent applications related to Oclaro Japan Inc. Oclaro Japan Inc is listed as an Agent/Assignee. Note: Oclaro Japan Inc may have other listings under different names/spellings. We're not affiliated with Oclaro Japan Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "O" | Oclaro Japan Inc-related inventors


12/31/15 / #20150381279

Optical transceiver and communication system

A communication system includes a termination-side optical transmitter comprising a reflective semiconductor optical amplifier, a reflective unit configured to reflect output light from the termination-side optical transmitter, and a terminal station-side optical receiver connected to the termination-side optical transmitter via a transmission line and configured to receive the output light from the termination-side optical transmitter by limiting a frequency band of the output light. The reflective semiconductor optical amplifier amplifies the output light reflected by the reflective unit, modulates the amplified output light based on an electric signal, and outputs the modulated output light.. ... Oclaro Japan Inc

12/24/15 / #20150372760

Optical transceiver

An optical transceiver is configured to use, as an electric signal, a digital modulation signal having a predetermined bit rate. The optical transceiver includes a case having a space for storing a component therein and a resistor being arranged between upper and lower surfaces of the space and having conductance of from 1 s/m to 1,000 s/m. ... Oclaro Japan Inc

10/01/15 / #20150282300

Differential transmission circuit, optical module and manufacturing method of differential transmission circuit

A differential transmission circuit includes: a dielectric layer for embedding a plurality of first strip conductor pairs arranged side by side in the same layer above a ground conductor layer, each of the plurality of first strip conductor pairs including a first right strip conductor and a first left strip conductor, the dielectric layer being formed from an upper side of the ground conductor layer up to a region above the plurality of first strip conductor pairs, the dielectric layer having a flat upper surface. A region between adjacent two of the plurality of first strip conductor pairs is embedded in the dielectric layer without arranging a conductor in the region.. ... Oclaro Japan Inc

09/24/15 / #20150270814

Optical receiver module

An optical receiver module includes a light receiving element that converts a received light signal into an electric signal, a bias pad supplied with a bias power. The bias pad is included in the light receiving element and/or a carrier on which the light receiving element is mounted. ... Oclaro Japan Inc

08/20/15 / #20150236477

Semiconductor optical device and manufacturing method thereof

To provide a semiconductor optical device with device resistance reduced for optical communication. The semiconductor optical device includes an active layer (306) for emitting light through recombination of an electron and a hole; a diffraction grating (309) having a pitch defined in accordance with an output wavelength of the light emitted; a first semiconductor layer (311) including at least al, made of in and group-v compound, and formed on the diffraction grating; and a second semiconductor layer (307) including mg, made of in and group-v compound, and formed on the first semiconductor layer (311).. ... Oclaro Japan Inc

07/30/15 / #20150214695

Horizontal cavity surface emitting laser device

A horizontal cavity surface emitting laser device includes an active layer configured to generate light to be emitted in one direction along the one surface of a semiconductor substrate and in another direction opposite to the one direction. The device also includes a rear distributed bragg reflector unit configured to reflect the light. ... Oclaro Japan Inc

06/04/15 / #20150155687

Semiconductor laser and optical semiconductor device

In the semiconductor laser including a diffraction grating in which a first diffraction grating region with a first pitch, a second diffraction grating region with a second pitch and a third diffraction grating region with the first pitch, an anti-reflection film coated on an end facet to the light-emitting side, and a reflection film coated on an opposite end facet, the first diffraction grating region is greater than the third diffraction grating region, and the second diffraction grating region is formed, in such a manner that phases of the first and third diffraction grating regions are shifted in a range of equal to or more than 0.6 π to equal to or less than 0.9 π, phases are successive on a boundary between the first and second diffraction grating regions and the phases are successive on a boundary between the second and third diffraction grating regions.. . ... Oclaro Japan Inc

05/21/15 / #20150136957

Optical receiver module and optical transmitter module

An optical receiver module includes: a lens array including a plurality of condenser lenses arranged in one direction to define a plane with optical axes in parallel to each other; and a light receiving element array including a plurality of light receiving elements each configured to receive light emitted from each of the condenser lenses. The light receiving element array includes: a semiconductor substrate to which the light from each of the condenser lenses is input and through which the light is transmitted; and light receiving portions each configured to receive the light transmitted through the semiconductor substrate and convert the light into an electrical signal. ... Oclaro Japan Inc

03/12/15 / #20150071589

Semiconductor optical device and optical module

To suppress occurrence of axial hole burning in a phase shift portion of a diffraction grating, provided is a semiconductor optical device including: a diffraction grating layer including a diffraction grating and a phase shift portion; and an optical waveguide layer including an active layer that has a gain with respect to an emission wavelength and an optical waveguide region that has no gain with respect to the emission wavelength. The optical waveguide region is formed at least on the lower side of the phase shift portion.. ... Oclaro Japan Inc

03/12/15 / #20150071584

Optical semiconductor resonator, optical semiconductor device, and optical module

In order to prevent non-uniformity in emission wavelength among different sites along an optical axis direction, provided is a resonator portion including: a waveguide which includes at least two areas where an effective refraction index varies in the optical axis direction; and diffraction gratings formed along the optical axis direction of the waveguide. The diffraction grating that is formed in one of the at least two areas of the waveguide where the effective refraction index is large has a pitch narrower than a pitch of the diffraction grating that is formed in another of the at least two areas of the waveguide where the effective refraction index is small.. ... Oclaro Japan Inc

02/26/15 / #20150055670

Multi-beam semiconductor laser device

Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. ... Oclaro Japan Inc

01/01/15 / #20150003483

Semiconductor laser

An aluminium gallium indium phosphide (algainp)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type gaas (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an algainp-based semiconductor containing silicon (si) as a dopant, an active layer, a p-type cladding layer formed of an algainp-based semiconductor containing magnesium (mg) or zinc (zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. ... Oclaro Japan Inc








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