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Osram Opto Semiconductors Gmbh patents


Recent patent applications related to Osram Opto Semiconductors Gmbh. Osram Opto Semiconductors Gmbh is listed as an Agent/Assignee. Note: Osram Opto Semiconductors Gmbh may have other listings under different names/spellings. We're not affiliated with Osram Opto Semiconductors Gmbh, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "O" | Osram Opto Semiconductors Gmbh-related inventors


 new patent  Method of producing a light-emitting arrangement

A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.. . ... Osram Opto Semiconductors Gmbh

 new patent  Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips and optoelectronic component having a radiation-emitting semiconductor chip

Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. ... Osram Opto Semiconductors Gmbh

Electronic device

An electronic device includes a carrier and a semiconductor chip, wherein the carrier includes a first dielectric layer and a second dielectric layer, a thermal conductivity of the first dielectric layer exceeds a thermal conductivity of the second dielectric layer, the second dielectric layer is arranged on the first dielectric layer and partially covers the first dielectric layer, the semiconductor chip is arranged on the carrier in a mounting area in which the first dielectric layer is not covered by the second dielectric layer, and the carrier includes a solder terminal for electrical contacting arranged on the second dielectric layer.. . ... Osram Opto Semiconductors Gmbh

Method for producing a nitride semiconductor component, and nitride semiconductor component

The invention relates to a method for producing a nitride semiconductor component (10), comprising the following steps: epitaxially growing a nitride semiconductor layer sequence (2) on a growth substrate (1), wherein recesses (7) are formed on a boundary surface (5a) of a semiconductor layer (5) of the semiconductor layer sequence (2), growing a p-doped contact layer (8) over the semiconductor layer (5), wherein the p-doped contact layer (8) at least partially fills the recesses, and wherein the p-doped contact layer (8) has a lower dopant concentration in first regions (81) arranged at least partially in the recesses (7) than in second regions (82) arranged outside of the recesses (7), and applying a connection layer (9), which has a metal, a metal alloy, or a transparent conductive oxide, to the p-doped contact layer (8). The invention further relates to a nitride semiconductor component (10) that can be produced by means of the method.. ... Osram Opto Semiconductors Gmbh

Method of manufacturing an optoelectronic component, and optoelectronic component

A method of manufacturing an optoelectronic component includes providing a carrier; arranging an ink on an upper side of the carrier; arranging an adhesive on the ink; and arranging the optoelectronic semiconductor chip on the adhesive. An optoelectronic component includes a carrier, an ink arranged on an upper side of the carrier, an adhesive arranged on the ink, and an optoelectronic semiconductor chip arranged on the adhesive.. ... Osram Opto Semiconductors Gmbh

Process of producing a component and apparatus that produces a component

A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a scratching process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.. . ... Osram Opto Semiconductors Gmbh

Method for producing a component, and a component

A method for producing a component may include providing a composite containing a semiconductor stack layer, a first exposed connection layer and a second exposed connection layer, where the connection layers are arranged on the semiconductor stack, assigned to different electrical polarities and are configured to electrically contact the component to be produced; forming a first through contact exposed in lateral directions on the first connection layer and a second through contact exposed in lateral directions on the second connection layer, where the through contacts are formed from an electrically conductive connection material; and applying a molded body material on the composite for forming a molded body, where each of the through contacts are fully and circumferentially enclosed by the molded body at least in the lateral directions, such that the molded body and the through contacts form a permanently continuous carrier which mechanically carries the component to be produced. . ... Osram Opto Semiconductors Gmbh

Method for producing a component and component

A method for producing a component having a semiconductor body includes providing the semiconductor body including a radiation passage surface and a rear side facing away from the radiation passage surface, wherein the semiconductor body comprises on the rear side a connection location for the electrical contacting of the semiconductor body, providing a composite carrier including a carrier layer and a partly cured connecting layer, applying the semiconductor body on the composite carrier, such that the connection location penetrates into the partly cured connecting layer, curing the connecting layer to form a solid composite, applying a molded body material on the composite carrier after curing the connecting layer, wherein the molded body covers side surfaces of the semiconductor body, forming a cutout through the carrier layer and the connecting layer in order to expose the connection location, and filling the cutout with an electrically conductive material.. . ... Osram Opto Semiconductors Gmbh

Component having a metal carrier and method for producing components

A component having a metal carrier and a method for producing a component are disclosed. In an embodiment the component includes a carrier having a metallic carrier layer, an insulating layer and a first through-contact extending in a vertical direction throughout the carrier layer, wherein the through-contact is electrically isolated from the carrier layer via the insulating layer. ... Osram Opto Semiconductors Gmbh

Semiconductor element and method for production thereof

The invention relates to a method for producing a component wherein a composite, comprising a semiconductor layer stack and connection layers, is provided, wherein a molded article material is applied to the composite to form a molded article, such that the molded article covers the connection layers. Recesses for exposing the connection layers are formed through the molded article and the recesses are then filled with an electrically conductive material to form through-contacts. ... Osram Opto Semiconductors Gmbh

Optoelectronic component and method for producing an optoelectronic component

The invention relates to an optoelectronic component. The component comprises a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. ... Osram Opto Semiconductors Gmbh

Method for producing a plurality of semiconductor chips and radiation-emitting semiconductor

The invention relates, inter alia, to a method for producing a plurality of semiconductor chips, the method comprising the following steps: providing a substrate (1); applying a semiconductor layer sequence (2) to the substrate (1); generating a plurality of recesses (6) in the semiconductor layer sequence (2) on the side of the semiconductor layer sequence (2) that is facing away from the substrate (1); detaching the substrate (1) from the semiconductor layer sequence (2); thinning the semiconductor layer sequence (2) on the side that was facing the substrate (1) prior to detaching the substrate (1).. . ... Osram Opto Semiconductors Gmbh

Optoelectronic lighting device

An optoelectronic lighting device includes a black housing including a cavity, wherein the cavity includes a base, a semiconductor component is arranged on the base of the cavity with an underside of a main body facing the base, and the cavity is filled with a reflective material from the base up to a predetermined height, which is smaller than a height of a top side of the main body relative to the base of the cavity such that electromagnetic radiation emerging from the main body through side faces may be reflected by the reflective material back in the direction of the side faces to couple reflected electromagnetic radiation into the main body such that at least part of the electromagnetic radiation coupled in may emerge again from the main body through the top side of the main body.. . ... Osram Opto Semiconductors Gmbh

Semiconductor laser, laser assembly and method of making a semiconductor laser

A semiconductor laser, a laser assembly and a method of making a semiconductor laser are disclosed. In an embodiment the surface-emitting semiconductor laser includes a carrier having a carrier main side mechanically carrying a semiconductor laser; a first bragg mirror and a second bragg mirror so that the second bragg mirror is further away from the carrier than the first bragg mirror; a semiconductor layer sequence between the first and the second bragg mirrors having at least one active zone for generating laser radiation; a metal mirror arranged directly on a side of the first bragg mirror facing the carrier for reflecting laser radiation generated during operation of the semiconductor laser; a bonding agent layer located between the carrier and the semiconductor layer sequence; a resonator oriented perpendicular to the carrier main side; and an electrically insulating passivation layer located in the metal mirror.. ... Osram Opto Semiconductors Gmbh

07/26/18 / #20180212127

Optoelectronic component, assembly of optoelectronic components and method of producing an optoelectronic component

An optoelectronic component includes a semiconductor chip configured to emit radiation at least via a main radiation surface, a converter element arranged in a beam path of the semiconductor chip, an encapsulating element including a cover element and a side element and forming at least a seal for the converter element against environmental influences, wherein the cover element is arranged above the converter element and the side element, in the cross-section, is arranged laterally to the semiconductor chip and converter element and surrounds the semiconductor chip, the side element and the cover element are in direct contact at least in regions, and the side element includes at least one metal and is in direct contact with the converter element in the lateral direction.. . ... Osram Opto Semiconductors Gmbh

07/26/18 / #20180212121

Component and method of producing components

A component includes a carrier having a front side facing towards a semiconductor body and a rear side facing away from the semiconductor body, each of which is formed at least in places by a surface of a shaped body, a metal layer contains a first sub-region and a second sub-region, wherein the first sub-region and the second sub-region adjoin the shaped body in a lateral direction, are electrically connectable in a vertical direction on the front side of the carrier, are assigned to different electrical polarities of the component and are thus configured to electrically contact the semiconductor body, and the carrier has a side face running perpendicularly or obliquely to the rear side of the carrier and is configured as a mounting surface of the component, wherein at least one of the sub-regions is electrically connectable via the side face and exhibits singulation traces.. . ... Osram Opto Semiconductors Gmbh

07/26/18 / #20180212108

Optoelectronic arrangement and method for producing an optoelectronic arrangement

An optoelectronic arrangement is specified, comprising a moulded body (2) having a base surface (2b), a first pixel group (41) with a multiplicity of pixels (1) assigned thereto, each having a first semiconductor region (11), a second semiconductor region (12) and an active region (10), a multiplicity of separating structures (3) arranged between the pixels (1), and at least one first contact structure (51, 52, 53) having a first contact plane (51) and a first contact location (52), which is freely accessible at the base surface (2b), wherein the pixels (1) of the first pixel group (41) are arranged alongside one another at the top surface (2a), the first semiconductor regions (11) and/or the second semiconductor regions (12) of adjacent pixels (1) of the first pixel group (41) are electrically insulated from one another by means of the separating structures (3), a first contact structure (51, 52, 53) is assigned one-to-one to the first pixel group (41), and the first semiconductor regions (11) of the pixels (1) of the first pixel group (41) are electrically conductively connected to one another by means of the first contact plane (51) and are electrically contactable by means of the first contact location (52).. . ... Osram Opto Semiconductors Gmbh

07/26/18 / #20180212107

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment, the chip includes a semiconductor layer sequence with a first side, a second side and an active zone and at least one via electrically contacting the first side with the second side through the active zone, wherein the via has a base region including a cylinder, a truncated cone or a truncated pyramid, wherein the via is surrounded in a lateral direction by an electric insulation layer, wherein the via has a contact region including a truncated cone, a truncated pyramid, or a spherical or aspherical body, wherein the contract region directly follows the base region, wherein the contact region is in direct contact with the second side, wherein a first flank angle of the base region is different from a second flank angle of the contact region, and wherein the first and second flank angles are related to the lateral direction.. ... Osram Opto Semiconductors Gmbh

07/19/18 / #20180206303

Lighting device and operating method for such a lighting device

In one embodiment, the lighting device (1) comprises at least one base chip (21) and a plurality of cover emitter regions (22). The base chip or chips (21) and the cover emitter regions (22) are realized by light-emitting diode chips and can be electrically controlled independently of one another. ... Osram Opto Semiconductors Gmbh

07/19/18 / #20180204876

Optoelectronic component and a method of producing an optoelectronic component

A component includes a carrier with a mold body made of an electrically insulating plastic material and a metal layer, wherein the metal layer includes a first subregion and a second subregion, and at least one of the subregions extends in a vertical direction through a mold body to electrically contact a semiconductor body, and the first and second segments are spatially separated from one another in a lateral direction and electrically conductively connect to one another via a connecting structure, wherein the connecting structure, the first subregion and the second subregion adjoin the mold body and are arranged on the same side of the semiconductor body.. . ... Osram Opto Semiconductors Gmbh

07/19/18 / #20180204823

Video wall module and method for producing same

A video wall module and a method for producing a video wall module are disclosed. In embodiments, the video wall module includes a plurality of light emitting diode chips, each light emitting diode chip comprising a top electrode arranged at a top side of the light emitting diode chip, a bottom electrode arranged at a bottom side of the light emitting diode chip and a molded body embedding the light emitting diode chips, a front-side metallization arranged at the front side of the molded body, wherein the top electrodes are connected to the front-side metallization, a rear-side metallization arranged at a rear side of the molded body, wherein the bottom electrodes are connected to the rear-side metallization, a dielectric layer arranged at the rear side of the molded body and an outer metallization arranged at the dielectric layer, wherein the rear-side metallization is electrically conductively connected to the outer metallization.. ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180198045

Optoelectronic component and a method of producing an optoelectronic component

An optoelectronic component includes a boundary layer is arranged between a semiconductor body and a metallic layer in a lateral direction, adjoins the semiconductor body at least in places, covers an active layer laterally, and has a lower refractive index compared to the semiconductor body, a metallic layer is configured to prevent the electromagnetic radiation generated during operation of the component and passes through the boundary layer from impinging on a mold body, the boundary layer is formed from a radiation-transmitting dielectric material having a refractive index of 1 to 2, and a layer thickness of the boundary layer is at least 400 nm and selected such that an amplitude of an evanescent wave, which is obtained in the event of total internal reflection at an interface between the boundary layer and the semiconductor body, is reduced to less than 37% of its original value within the boundary layer.. . ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180198044

Optoelectronic lamp device and method of producing same

An optoelectronic lamp device includes an optoelectronic semiconductor component including a top side including a light-emitting face, and a housing embedding the semiconductor component and leaving free the light-emitting face, wherein a housing face is coated with a light-scattering dielectric resist layer that may scatter light incident on a face of the resist layer facing away from the housing face.. . ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180198037

Method for producing optoelectronic conversion semiconductor chips and composite of conversion semiconductor chips

A method for producing optoelectronic conversion semiconductor chips and a composite of conversion semiconductor chips are disclosed. In an embodiment the method includes growing a semiconductor layer sequence on a growth substrate, applying an electric contact on to a rear side of the semiconductor layer sequence facing away from the growth substrate, thinning the growth substrate, after thinning, cutting the growth substrate at least to the semiconductor layer sequence thereby forming a first intermediate space, applying a conversion layer on to the thinned growth substrate and singulating at least the thinned growth substrate and the semiconductor layer sequence.. ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180198034

Optoelectronic component comprising a conversion element, method of producing an optoelectronic component comprising a conversion element, and use of an optoelectronic component comprising a conversion element

A method of producing an optoelectronic component including a conversion element includes: a) providing a layer sequence having an active layer, wherein the active layer is configured to emit electromagnetic primary radiation; b) providing quantum dots, wherein the quantum dots are functionalized with an organic group and/or the quantum dots dissolved or dispersed in a first solvent and/or are present as a powder; c*) providing a mixture including a precursor of an inorganic matrix material and of a second solvent; d) mixing the mixture obtained in step c*) with the quantum dots of step b); e) drying the mixture; and f) sintering the mixture to form the conversion element.. . ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180198028

Optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23). ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180197843

Optoelectronic semiconductor component

An optoelectronic semiconductor component is disclosed, comprising: a semiconductor body (1) having a semiconductor layer sequence (2) with a p-type semiconductor region (3), an n-type semiconductor region (5), and an active layer (4) arranged between the p-type semiconductor region (3) and the n-type semiconductor region (5); a support (10) having a plastic material and a first via (11) and a second via (12); a p-contact layer (7) and an n-contact layer (8), at least some regions of which are arranged between the support (10) and the semiconductor body (1), wherein the p-contact layer (7) connects the first via (11) to the p-type semiconductor region (3) and the n-contact layer (8, 8a) connects the second via (12) to the n-type semiconductor region (5); and an esd protection element (15) which is arranged between the support (10) and the semiconductor body (1), wherein the esd protection element (15) is electrically conductively connected to the first via (11) and to the second via (12), and wherein a forward direction of the esd protection element (15) is anti-parallel to a forward direction of the semiconductor layer sequence (2).. . ... Osram Opto Semiconductors Gmbh

07/12/18 / #20180197841

Lighting module

The invention relates to a lighting module (1) comprising an assembly body (3) extending between a rear side (31) and a front side (30) opposite the rear side, and comprising a plurality of semiconductor components (2) provided for generating radiation, wherein: the assembly body has a plurality of recesses (35) on the rear side, in which the semiconductor components are arranged; the assembly body is permeable to the radiation generated in the semiconductor components, and said radiation passes out of the front side of the assembly body; a contact layer (5) is arranged on the rear side of the assembly body, to which the semiconductor components are connected in an electrically conductive manner via connecting lines; and a reflector layer (6) is arranged on the rear side of the assembly body, said reflector layer entirely covering at least the recesses.. . ... Osram Opto Semiconductors Gmbh

07/05/18 / #20180190874

Method for producing an optoelectronic semiconductor device and optoelectronic semiconductor device

A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.. ... Osram Opto Semiconductors Gmbh

07/05/18 / #20180190711

Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

The invention relates to a method for producing an optoelectronic semiconductor chip (1). A semiconductor layer sequence (3) is provided, comprising a first semiconductor layer (3a) and a second semiconductor layer (3b). ... Osram Opto Semiconductors Gmbh

07/05/18 / #20180190610

Method for joining at least two components

The invention relates to a method for connecting at least two components (1, 2), comprising the following steps: a) providing at least a first component (1) and a second component (2), b) applying at least one donor layer (3) to the first and/or the second component (1, 2), wherein the donor layer (3) is enriched with oxygen (31), c) applying a metal layer (4) to the donor layer (3), the first or the second component (1, 2), d) heating at least the metal layer (4) to a first temperature (t1) such that the metal layer (4) is melted and the first component (1) and the second component (2) are connected to one another, and e) heating the arrangement to a second temperature (t2) such that the oxygen (31) passes from the donor layer (3) into the metal layer (4) and the metal layer (4) is converted to form a stable metal oxide layer (5), wherein the metal oxide layer (5) has a higher melting temperature than the metal layer (4), wherein at least the donor layer (3) and the metal oxide layer (5) connect the first component (1) and the second component (2) to one another.. . ... Osram Opto Semiconductors Gmbh

06/28/18 / #20180182946

Arrangement

An arrangement is disclosed. In an embodiment the arrangement includes at least one semiconductor component and a heat sink, wherein the semiconductor component is arranged on the heat sink, wherein the heat sink is configured to dissipate heat from the semiconductor component, wherein the heat sink comprises a thermally conductive material, and wherein the material comprises at least aluminum and silicon.. ... Osram Opto Semiconductors Gmbh

06/28/18 / #20180182943

Component and method of producing a component

A component comprising a support and a semiconductor body arranged on the support, the support formed by a molded body and a metal layer. The metal layer has a first subregion and a second subregion laterally spaced apart by an intermediate space and thereby electrically separated. ... Osram Opto Semiconductors Gmbh

06/28/18 / #20180182934

Light emitting unit

A light emitting unit includes a light emitting semiconductor chip and a wavelength converter for the light of the semiconductor chip. The wavelength converter has a substrate with a first surface. ... Osram Opto Semiconductors Gmbh

06/28/18 / #20180182926

Component having improved coupling-out properties

A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.. . ... Osram Opto Semiconductors Gmbh

06/28/18 / #20180182739

Light-emitting diode arrangement and method for the production thereof

According to the present disclosure, a light-emitting diode arrangement provides a substrate, first leds, which are arranged on the substrate, second leds, which are arranged on the substrate laterally adjacent to the first leds, at least one cover body, which covers the first leds, at least one dam, which is arranged on the substrate and which encloses the first leds and the second leds in the lateral direction, and a first potting material, which covers the second leds and is delimited in the lateral direction by the dam and the cover body. The cover body and/or the first potting material include(s) a first converter material for converting electromagnetic radiation.. ... Osram Opto Semiconductors Gmbh

06/21/18 / #20180175260

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes at least one metallic surface, a contacted optoelectronic semiconductor chip configured to emit radiation and a protective layer arranged on the at least one metallic surface, wherein the protective layer comprises a protective material of at least one n-heterocyclic carbene, and wherein a covalent bond is formed between the protective material and the at least one metallic surface.. ... Osram Opto Semiconductors Gmbh

06/21/18 / #20180175243

Method for producing a nitride semiconductor component, and a nitride semiconductor component

The invention relates to a method for producing a nitride semiconductor component (100), comprising the steps of: —providing a growth substrate (1) having a growth surface (10) formed from a planar area (11) with a plurality of three-dimensionally shaped surface structures (12) on said planar area (11), —growing a nitride-based semiconductor layer sequence (30) on the growth surface (10), growth beginning selectively on a growth area (13) of said growth substrate, and the growth area (13) being less than 45% of the growth surface (10). The invention also relates to a nitride semiconductor component (100) which can be produced according to said method.. ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180168010

Lighting device, lighting arrangement comprising lighting device and method for operating a lighting device

A lighting device comprising a plurality of components (2) provided for generating radiation, a plurality of row lines (z1, z2) and a plurality of column lines (s1, s2, . . ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180166854

Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device

The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and —a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein —the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a iii-nitride compound semiconductor material, —the first mirror is electrically conductive, and —the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.. . ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180166614

Method of producing a converter component

A method of producing a converter component for an optoelectronic lighting apparatus includes forming a layer stack having an injection-molded or extruded conversion layer and an injection-molded or extruded diffuser layer. A converter component for an optoelectronic lighting apparatus includes a layer stack including an injection-molded or extruded conversion layer, and an injection-molded or extruded diffuser layer.. ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180166611

Method of producing a housing cover, method of producing an optoelectronic component, and optoelectronic component

A method of producing a housing cover includes providing a cover blank having a mounting surface formed on an underside; connecting the underside of the cover blank to a silicon slice; creating at least one opening in the silicon slice to expose at least part of the mounting surface; arranging a base metallization on the exposed part of the mounting surface; and removing the silicon slice.. . ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180166499

Display device having a plurality of pixels that can be operated separately from one another

A display device having a plurality of pixels that can be operated separately from one another is disclosed. In an embodiment the display includes a semiconductor layer sequence and a first contact structure for contacting a first semiconductor layer and a second contact structure for contacting a second semiconductor layer, wherein the first contact structure has first contacts configured to be operated separately from one another, each first contact extending laterally and uninterrupted along the first semiconductor layer and each first contact delimits a pixel in a lateral manner with its contour, wherein the semiconductor layer sequence and the first contact structure have at least one recess laterally bordering a respective pixel, which recess extends through the first contact structure, the first semiconductor layer and the active layer into the second semiconductor layer, and wherein the second contact structure has second contacts extending through the at least one recess.. ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180166428

Light source comprising a number of semi-conductor components

A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.. . ... Osram Opto Semiconductors Gmbh

06/14/18 / #20180164559

Optoelectronic component having a radiation source

An optoelectronic component includes at least one radiation source that produced electromagnetic radiation, a reflector, and a lens, wherein the reflector deviates a part of the radiation of the radiation source into a desired beam direction, the lens deviates at least a part of the radiation of the radiation source into the desired beam direction, the lens has a first side face which is conical at least in some areas, the first side face faces toward the radiation source, and the reflector has a concave first section and a second convex section.. . ... Osram Opto Semiconductors Gmbh

06/07/18 / #20180159009

Method for producing an electronic component with a carrier element and electronic component with a carrier element

The invention relates to a method for producing an electronic component with a carrier element (100), with the steps: producing the carrier element (100), having the steps a) providing a first metal layer (1) comprising a first metal material, wherein the first metal layer (1) has a first and a second main surface (10, 11) which face away from one another, b) applying a second metal layer (2) comprising a second metal material on at least one of the main surfaces (10, 11), c) converting a part of the second metal layer (2) into a dielectric ceramic layer (3), wherein the second metal material forms a component of the ceramic layer (3), and the ceramic layer (3) forms a surface (30) which faces away from the first metal layer (1) and is above the second metal layer (2);—arranging at least one electronic semiconductor chip (21) on the carrier element (100). The invention further relates to an electronic component with a carrier element (100).. ... Osram Opto Semiconductors Gmbh

06/07/18 / #20180158993

Method for producing at least one optoelectronic semiconductor component and optoelectronic semiconductor component

A method for producing at least one optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment, the method includes providing a semiconductor layer sequence comprising a first semiconductor material configured to emit a first radiation and applying a conversion element at least partially on the semiconductor layer sequence via a cold method, wherein the conversion element comprises a second semiconductor material, and wherein the second semiconductor material is configured to convert the first radiation into a second radiation.. ... Osram Opto Semiconductors Gmbh

05/31/18 / #20180152002

Semiconductor laser diode and method for producing a semiconductor laser diode

A semiconductor laser diode and a method for manufacturing a semiconductor laser diode are disclosed. In an embodiment, the semiconductor laser diode includes a semiconductor layer sequence having an active zone, wherein the semiconductor layer sequence has a cylindrical shape, wherein a cylinder axis of the semiconductor layer sequence is perpendicular to a layer plane of the semiconductor layer sequence, and wherein the semiconductor laser diode is configured to emit radiation perpendicularly to the cylinder axis of the semiconductor layer sequence.. ... Osram Opto Semiconductors Gmbh

05/31/18 / #20180151787

Method of producing an optoelectronic component and optoelectronic component

A method of producing an optoelectronic component includes providing a wafer substrate that includes a light-emitting layer sequence, singulating the wafer substrate having the layer sequence into semiconductor components, applying the semiconductor components to an intermediate carrier, arranging a potting material on the intermediate carrier such that the potting material laterally surrounds the semiconductor components and is in direct contact, at least in places, with side surfaces of the semiconductor components, arranging one contact on one semiconductor component and the potting material, wherein one contact is arranged on a side of the semiconductor component and the potting material remote from the intermediate carrier, connecting the component to a carrier element, on a side of the semiconductor components remote from the intermediate carrier, removing the intermediate carrier and the wafer substrate of the semiconductor components, and bringing the semiconductor components into electrical contact by the contacts and the potting material.. . ... Osram Opto Semiconductors Gmbh

05/31/18 / #20180151777

Method for producing an optoelectronic device with a contact area of accurately and reproducibly defined size

An optoelectronic device is disclosed. In an embodiment the device includes a semiconductor crystal with a surface having a first lateral region, a second lateral region and a third lateral region, a contact area arranged on the surface in the first lateral region, the contact area comprising a first metal and a first layer including a dielectric arranged on the surface in the third lateral region. ... Osram Opto Semiconductors Gmbh

05/31/18 / #20180151548

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a semiconductor chip subdivided into a plurality of pixels, the pixels being arranged next to one another in a lateral direction and being configured to be activated individually and independently and a metallic connecting element having an upper side and an underside, the connecting element including a contiguous metallic connecting layer, which is completely passed through by a plurality of first metallic through-connections arranged next to one another in the lateral direction, wherein the first through-connections are electrically insulated and spaced from the connecting layer by insulating regions, wherein each first through-connection is unambiguously assigned to one pixel, is electrically-conductively connected to this pixel and forms a first electrical contact to this pixel, and wherein the semiconductor chip is connected by the connecting element to a carrier.. ... Osram Opto Semiconductors Gmbh

05/31/18 / #20180148644

Phosphor

A phosphor is disclosed. In an embodiment the phosphor includes an inorganic compound having at least one activator e and n and/or o in its empirical formula, wherein e is selected from the group consisting of mn, cr, ni, ce, pr, nd, sm, eu, tb, dy, ho, er, yb, tm, li, na, k, rb, cs and combinations thereof, and wherein the inorganic compound crystallizes in a crystal structure with the same atomic sequence as in k2zn6o7.. ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180145235

Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip (c1) having an electrically conductive substrate (t), an active part (at) containing epitaxially grown layers, and an intermediate layer (zs) which is arranged between the substrate (t) and the active part (at) and contains a solder material. The optoelectronic semiconductor component further comprises an electrical connection point, which at least partially covers an underside of the substrate (t), wherein the electrical connection point comprises a first contact layer (ks1) on a side facing the substrate (t), and the first contact layer (ks1) contains aluminium or consists of aluminium.. ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180145234

Method of producing optoelectronic semiconductor components, and optoelectronic semiconductor component

A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.. . ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180145230

Electronic component, optoelectronic component, component arrangement, and method for producing an electronic component

An electronic component, an optoelectronic component, and a component arrangement are disclosed. In an embodiment the electronic component includes an electronic semiconductor chip and a molded body, wherein the molded body covers at least one side face of the electronic semiconductor chip, wherein a surface of the electronic semiconductor chip is at least partly not covered by the molded body, wherein the molded body includes a first side face with a peg, and wherein the molded body includes a second side face with a groove matching the peg.. ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180145225

Optoelectronic semiconductor chip and optoelectronic module

An optoelectronic semiconductor chip includes a carrier and a semiconductor body arranged on the carrier with a semiconductor layer sequence, wherein the semiconductor layer sequence includes an active region arranged between a first semiconductor layer and a second semiconductor layer and generates or receives electromagnetic radiation, the first semiconductor layer connects to a first contact in an electrically-conductive manner, the first contact is formed on a rear side of the carrier facing away from the semiconductor body, the second semiconductor layer connects to both a second contact and a third contact in an electrically-conductive manner, and the second contact is formed on the front side of the carrier facing towards the semiconductor body and the third contact on the rear side of the carrier facing away from the semiconductor body.. . ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180145211

Optoelectronic arrangement and depth measuring system

An optoelectronic arrangement that produces a light pattern includes a light-emitting diode chip configured to emit electromagnetic radiation on its upper side and forming a first two-dimensional pattern on the upper side of the light-emitting diode chip, and an optically imaging element configured to project electromagnetic radiation emitted by the light-emitting diode chip into an environment of the optoelectronic arrangement.. . ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180144933

Method for producing a nitride compound semiconductor device

A method for procuring a nitride compound semiconductor device is disclosed. In an embodiment the method includes growing a first nitride compound semiconductor layer onto a growth substrate, depositing a masking layer, growing a second nitride compound semiconductor layer onto the masking layer, growing a third nitride compound semiconductor layer onto the second nitride compound semiconductor layer such that the third nitride compound semiconductor layer has non-planar structures and growing a fourth nitride compound semiconductor layer onto the non-planar structures such that the fourth nitride compound semiconductor layer has an essentially planar surface. ... Osram Opto Semiconductors Gmbh

05/24/18 / #20180143414

Method of producing a lens for an optoelectronic lighting device

A method of producing a lens for an optoelectronic lighting device, wherein the optoelectronic lighting device includes an optoelectronic semiconductor component having a light-emitting surface, including applying a curable lens material to the light-emitting surface, and curing the lens material to form a lens from a cured lens material, wherein after the application and before or during the curing, the light-emitting surface is arranged into a position in which a normal vector of the light-emitting surface oriented in the direction of the applied lens material and a normal force of a weight acting on the light-emitting surface are parallel to one another so that the lens material at least partially cures in the position.. . ... Osram Opto Semiconductors Gmbh

05/10/18 / #20180130925

Optoelectronic semiconductor device, method of producing an electrical contact and method of producing a semiconductor device

An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.. . ... Osram Opto Semiconductors Gmbh

05/03/18 / #20180123007

Radiation-emitting semiconductor component and production method of a plurality of semiconductor components

A radiation-emitting semiconductor component and a method for producing a plurality of semiconductor components are disclosed. In an embodiment the component includes a semiconductor chip comprising a semiconductor layer sequence, a front side and a rear side opposite the front side, and a molded body molded on to the semiconductor chip at least in some places. ... Osram Opto Semiconductors Gmbh

05/03/18 / #20180122997

Method of producing optoelectronic components and surface-mounted optoelectronic component

A method of producing optoelectronic components includes a) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; b) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; c) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; d) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; e) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and f) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.. . ... Osram Opto Semiconductors Gmbh

05/03/18 / #20180122990

Device and method for producing a device

A device and a method for producing a device are disclosed. In an embodiment the device includes a carrier and a semiconductor body arranged in a vertical direction on the carrier. ... Osram Opto Semiconductors Gmbh

05/03/18 / #20180117706

Method for dividing a composite into semiconductor chips, and semiconductor chip

The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. ... Osram Opto Semiconductors Gmbh

04/19/18 / #20180108811

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-type connection contact, wherein a first trench extending at least partially into the p-doped semiconductor layer is arranged below the p-type connection contact, wherein an electrically insulating first blocking element arranged at least partially below the p-type connection contact and at least partially within the trench is arranged at least between the n-doped semiconductor layer and the p-type connection contact, and wherein the electrically insulating first blocking element is configured to prevent a direct current flow between the p-type connection contact and the p-doped and n-doped semiconductor layers and the active layer.. ... Osram Opto Semiconductors Gmbh

04/19/18 / #20180108695

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6) in an electrically conductive manner.. . ... Osram Opto Semiconductors Gmbh

04/19/18 / #20180103857

Sensor for sensing a biometric function

A sensor that senses a biometric function includes at least one transmitter configured to transmit electromagnetic radiation in an emission direction, including at least one receiver configured to receive electromagnetic radiation in a receiving direction, wherein the transmitter and the receiver are configured such that the emission direction of the transmitter is inclined away from the receiving direction of the receiver by a defined angle, wherein the angle is 1° to 60°.. . ... Osram Opto Semiconductors Gmbh

04/12/18 / #20180102466

Optoelectronic semiconductor chip, optoelectronic semiconductor component and method for producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. ... Osram Opto Semiconductors Gmbh

04/12/18 / #20180102348

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.. . ... Osram Opto Semiconductors Gmbh

04/12/18 / #20180102323

Arrangement for spatially limiting a reservoir for a marker material

An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.. . ... Osram Opto Semiconductors Gmbh

04/12/18 / #20180101016

Optisch wirksames element, verfahren zur herstellung eines optisch wirksamen elements und optoelektronisches bauelement

An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.. ... Osram Opto Semiconductors Gmbh

04/12/18 / #20180100054

Optoelectronic device with a mixture having a silicone and a fluoro-organic additive

An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive. ... Osram Opto Semiconductors Gmbh

04/05/18 / #20180097335

Optoelectronic lamp device

An optoelectronic lamp device, including a carrier having a planar mounting face, at least one laser diode that emits laser radiation, wherein the laser diode has a fast axis and a slow axis, the laser diode is arranged on the mounting face such that the fast axis is formed extending parallel to the mounting face, a first collimator is provided for collimating laser radiation polarized in the direction of the fast axis, and a second collimator is provided for collimating laser radiation polarized in the direction of the slow axis, wherein, in the beam path of the laser radiation emitted by the laser diode, the first collimator is arranged proximally and the second collimator is arranged distally relative to the laser diode so that the laser radiation polarized in the direction of the fast axis can be collimated first, and only then can the laser radiation polarized in the direction of the slow axis be collimated.. . ... Osram Opto Semiconductors Gmbh

04/05/18 / #20180097156

Optoelectronic lighting device and method for the production of an optoelectronic lighting device

An optoelectronic lighting device and a method for manufacturing an optoelectronic lighting device are disclosed. In an embodiment the device includes a carrier and a light-emitting diode arranged on the carrier having a light-emitting surface. ... Osram Opto Semiconductors Gmbh

04/05/18 / #20180097154

Led emitter and method for manufacturing the same

In various embodiments, a light emitting component is provided. The light emitting component includes a plurality of light emitting semiconductor chips. ... Osram Opto Semiconductors Gmbh

04/05/18 / #20180097146

Radiation-emitting semiconductor device

The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).. ... Osram Opto Semiconductors Gmbh

04/05/18 / #20180096861

Method of machining a lead frame, and lead frame

A method of processing a lead frame having at least one electrically conductive contact section includes forming a depression in the at least one electrically conductive contact section so that a first electrically conductive contact subsection and a second electrically conductive contact subsection are formed, which are delimited from one another by the depression, and forming a housing made of a housing material, which housing includes a housing frame that at least partially embeds the lead frame, formation of the housing including introduction of housing material into the depression so that a housing frame section formed by the housing material introduced into the depression is formed between the first and second electrically conductive contact subsections to mechanically stabilize the first and second electrical conductive contact subsections by the housing frame section.. . ... Osram Opto Semiconductors Gmbh

03/29/18 / #20180090908

Arrangement having a substrate and a semiconductor laser

An arrangement having a substrate and a semiconductor laser and a method for manufacturing such an arrangement are disclosed. In an embodiment, the arrangement includes a substrate and a semiconductor laser, wherein the substrate has a top, side areas and a bottom, wherein at least one first recess is provided at the top, wherein the semiconductor laser is arranged on the top of the substrate such that a region of the side area of the semiconductor laser via which the electromagnetic radiation is emitted is arranged above the first recess.. ... Osram Opto Semiconductors Gmbh

03/29/18 / #20180090652

Optoelectronic device array and method for producing a multiplicity of optoelectronic device arrays

The invention relates to an optoelectronic component array (100) with a plurality of adjacent optoelectronic semiconductor components (60) and a covering body (81). According to the invention—each of the optoelectronic semiconductor components (60) has a ceramic support element (19) and a semiconductor chip (50) which is arranged on an upper face of the ceramic support element and which comprises a semiconductor element (54) designed to generate and/or receive radiation—the covering body (81) surrounds each of the ceramic support elements (19) of the optoelectronic semiconductor components in some regions at least in a lateral direction and connects adjacent ceramic support elements (19) together, and—the lower face of each of the ceramic support elements (19) is electrically insulated from the semiconductor chip (50).. ... Osram Opto Semiconductors Gmbh

03/29/18 / #20180090540

Method for producing a light-emitting diode display and light-emitting diode display

In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •a) providing a growth substrate (2); •b) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •c) producing a plurality of separate growth points (45) on or at the buffer layer (4); •d) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •e) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).. ... Osram Opto Semiconductors Gmbh

03/29/18 / #20180088215

Measuring system, use of at least one individually operable led lighting unit as a sender unit in a measuring system, method for operating a measuring system and lighting source having a measuring system

Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable led lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 μm and/or a surface area of less than or equal to 104 μm2, wherein the led lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable led lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.. ... Osram Opto Semiconductors Gmbh

03/29/18 / #20180087146

Method for producing a coating and optoelectronic semiconductor component having a coating

What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (φ) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.. . ... Osram Opto Semiconductors Gmbh

03/22/18 / #20180083415

Laser diode

A laser diode has a layer arrangement including a first layer structure extending along a z axis in a longitudinal direction, along an x axis in a transverse direction and along a y axis in a height direction, and a second and third layer structure arranged along the z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.. . ... Osram Opto Semiconductors Gmbh

03/22/18 / #20180083160

Component having a multiple quantum well structure

The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. ... Osram Opto Semiconductors Gmbh

03/22/18 / #20180083063

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.. ... Osram Opto Semiconductors Gmbh

03/22/18 / #20180082899

Method of removing a growth substrate from a layer sequence

A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.. . ... Osram Opto Semiconductors Gmbh

03/15/18 / #20180076370

Light-emitting component and method of producing a light-emitting component

A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.. . ... Osram Opto Semiconductors Gmbh

03/15/18 / #20180076367

Optoelectronic component and method for the production thereof

An optoelectronic component includes an optoelectronic semiconductor chip at least partly enclosed by a molded body, wherein a front side of the molded body is covered by a reflecting film, at least in some sections, and a section of the reflecting film is enclosed between the optoelectronic semiconductor chip and the molded body.. . ... Osram Opto Semiconductors Gmbh

03/15/18 / #20180076366

Optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.. . ... Osram Opto Semiconductors Gmbh

03/15/18 / #20180076359

Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening. ... Osram Opto Semiconductors Gmbh

03/08/18 / #20180069156

Optoelectronic device and method for the production of an optoelectronic device

The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an anchor group (3) and a head group (4), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone (2) present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed.. ... Osram Opto Semiconductors Gmbh

03/08/18 / #20180069147

Method for producing a plurality of semiconductor chips and semiconductor chip

Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. ... Osram Opto Semiconductors Gmbh

03/01/18 / #20180062051

Electromagnetic radiation-emitting assembly

An electromagnetic radiation-emitting assembly is disclosed. In an embodiment the assembly includes an electromagnetic radiation-emitting component arranged above a carrier, the electromagnetic radiation-emitting component including a first side facing away from the carrier, a second side facing the carrier, and at least one side wall connecting the first side and the second side of the electromagnetic radiation-emitting component to one another, an encapsulating body, into which the electromagnetic radiation-emitting component is embedded, which adjoins the first side and the side wall of the electromagnetic radiation-emitting component, a potting material at least partly surrounding the encapsulating body and a reflector body at least partly surrounding the potting material.. ... Osram Opto Semiconductors Gmbh

03/01/18 / #20180062031

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.. ... Osram Opto Semiconductors Gmbh

03/01/18 / #20180062029

Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). ... Osram Opto Semiconductors Gmbh

03/01/18 / #20180062027

Unknown

A method of producing optoelectronic semiconductor components includes a) providing a semiconductor layer sequence on a carrier top of a carrier, b) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces, c) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and d) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure, wherein step d) takes place without an additional etching mask for the anisotropic etching.. . ... Osram Opto Semiconductors Gmbh

02/22/18 / #20180053801

Sensor device

A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.. ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180048122

Method of producing an electronic component

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.. . ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180048114

Edge-emitting semiconductor laser and method for the production thereof

An edge-emitting semiconductor laser includes a semiconductor structure laterally bounded by first and second facets and having a central section and a first edge section, a layer sequence offset relative to the central section in the growth direction in the first edge section such that, in the first edge section, one of the cladding layers or one of the waveguide layers is arranged in the growth direction at a height of the active layer in the central section, the layer sequence includes an epitaxially grown additional layer arranged between the upper side and the lower cladding layer, the additional layer is not arranged between the upper side and the lower cladding layer in the central section, and the additional layer is electrically insulating or has doping with the opposite sign to the lower cladding layer.. . ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180047879

Method for producing a multiplicity of conversion elements, conversion element, and optoelectronic device

The invention relates to a method for producing a plurality of conversion elements (6) comprising the following steps: providing a substrate (1); applying a first mask layer (4) to the substrate (1), the first mask layer (4) being structured with through-holes (3) which completely penetrate the first mask layer (4); applying a conversion material (5) at least into the through-holes (3); and singulating the conversion elements (6) so as to produce a plurality of individual conversion elements (6). The invention also relates to two other methods, to a conversion element (6), and to an optoelectronic component.. ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180047873

Radiation body and method for producing a radiation body

A radiation body and a method for producing a radiation body are disclosed. In an embodiment, the radiation body includes a basic body configured to generate or absorb electromagnetic radiation, at least one main side having a rough structure of first elevations and at least one structured radiation surface structured with a fine structure of second elevations, wherein the fine structure brings about a gradual refractive index change for the radiation between materials adjoining the structured radiation surface, wherein the first elevations comprise heights and widths in each case of at least λmax/n, wherein each second elevation tapers toward a maximum of the respective second elevation and each second elevations has a height of at least 0.6·λmax/n and a width of λmax/(2n) at most in each case, and wherein a distance between neighboring second elevations is λmax/(2n) at most.. ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180047796

Method for producing an optoelectronic component and an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes a) providing an auxiliary carrier; b) applying a sacrificial layer on the auxiliary carrier; c) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; d) providing a semiconductor layer sequence; e) optionally applying an adhesive layer on the semiconductor layer sequence; f) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and g) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.. ... Osram Opto Semiconductors Gmbh

02/15/18 / #20180047628

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

A method for singulating an assemblage into a plurality of semiconductor chips is specified, wherein an assemblage comprising a carrier, a semiconductor layer sequence and a metallic layer is provided. Separating trenches are formed in the carrier. ... Osram Opto Semiconductors Gmbh

02/08/18 / #20180040787

Unknown

A light-emitting component includes at least two radiation-emitting semiconductor chips of a first type configured to emit electromagnetic radiation during operation, and a light exit surface at a light exit side of the light-emitting component, wherein each of the radiation-emitting semiconductor chips of the first type includes a semiconductor layer sequence with a stacking direction, the stacking direction of each radiation-emitting semiconductor chip of the first type is parallel to the light exit surface of the component, and all the semiconductor chips of the first type are arranged directly below the light exit surface.. . ... Osram Opto Semiconductors Gmbh

02/08/18 / #20180040781

Optoelectronic semiconductor component

An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. ... Osram Opto Semiconductors Gmbh

02/08/18 / #20180040772

Optoelectronic semiconductor body and method of producing an optoelectronic semiconductor body

An optoelectronic semiconductor body includes a carrier, a semiconductor layer sequence having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, and at least one through-via extending from the carrier right through the first layer and the active layer and at least partly through the second layer, wherein, when in operation, second charge carriers are injected via the through-via into the second layer, in a region of the active layer and the first layer the through-via is completely surrounded laterally by a continuous and contiguous bed of the active layer and the first layer, the through-via is formed from a semiconductor material, and the carrier is a growth substrate for the semiconductor layer sequence.. . ... Osram Opto Semiconductors Gmbh

02/08/18 / #20180040512

Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. ... Osram Opto Semiconductors Gmbh

02/08/18 / #20180040485

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

The invention relates to a method for structuring a nitride layer (2), comprising the following steps: a) providing a nitride layer (2) formed with silicon nitride of a first type, b) defining regions (40) of said nitride layer (2) to be transformed, and c) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.. . ... Osram Opto Semiconductors Gmbh

02/01/18 / #20180033932

Leadframe and chip package comprising a leadframe

A leadframe includes first and second parts separated from each other, and each comprises at least one anchoring hole. The first part comprises a mounting area, the second part comprises an edge line facing the first part which is curved, and the first part comprises first, second and third portions each having a maximum width, wherein the mounting area is arranged at the third portion, and the third portion follows the second portion and the second portion follows the first portion in a direction of a longitudinal extent of the first part such that the third portion faces the second part.. ... Osram Opto Semiconductors Gmbh

02/01/18 / #20180033931

Optoelectronic semiconductor component

An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.. . ... Osram Opto Semiconductors Gmbh

02/01/18 / #20180033927

Electronic component including a material comprising epoxysilane-modified polyorganosiloxane

The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by crosslinking a composition comprising a first organosiloxane having at least one terminal vinyl group, a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group. ... Osram Opto Semiconductors Gmbh

02/01/18 / #20180033925

Method of producing a light-emitting device, and light-emitting device

A method of producing a light-emitting device includes providing a carrier having a carrier top face and at least one light-emitting semiconductor chip arranged on the carrier top face, wherein the semiconductor chip has a radiation emission face and is arranged on the carrier top face such that the radiation emission face faces away from the carrier top face; arranging a converter element on the at least one semiconductor chip on its radiation emission face so that the converter element fully covers the radiation emission face of the semiconductor chip and extends laterally beyond the semiconductor chip; covering the converter element with an encapsulant, and compression molding and curing the encapsulant so that the encapsulant covers the converter element on a face facing away from the semiconductor chip, and the converter element and the encapsulant fit closely against the radiation emission face and at least against a side face of the semiconductor chip; and detaching the encapsulant, together with the converter element and the semiconductor chip, from the carrier.. . ... Osram Opto Semiconductors Gmbh

02/01/18 / #20180033921

Semiconductor illuminating device

A semiconductor illuminating device is disclosed. The device includes an led configured for emitting blue primary radiation and an led phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the led phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a cie standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 k.. ... Osram Opto Semiconductors Gmbh

01/25/18 / #20180026421

Laser component

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.. ... Osram Opto Semiconductors Gmbh

01/25/18 / #20180026167

Optoelectronic component

An optoelectronic component is disclosed. In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.. ... Osram Opto Semiconductors Gmbh

01/25/18 / #20180024185

Method and device for inspecting an optoelectronic component

A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.. ... Osram Opto Semiconductors Gmbh

01/25/18 / #20180023782

Device for converting the wavelength of electromagnetic radiation

A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.. ... Osram Opto Semiconductors Gmbh

01/18/18 / #20180019373

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 μm in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).. . ... Osram Opto Semiconductors Gmbh

01/18/18 / #20180019143

Bin insert for binning of light emitting devices, binning arrangement for binning of light emitting devices, and use of a binning arrangement for binning of light emitting devices

A bin insert for binning of light emitting devices comprises a hollow structural section (1). The hollow structural section (1) further comprises a top opening (13) and a bottom opening (14) at a top and a bottom end (11, 12) of the hollow structural section (1), respectively. ... Osram Opto Semiconductors Gmbh

01/18/18 / #20180018940

Method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, and display apparatus

A method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, wherein the display apparatus has a multiplicity of pixels each arranged for adjustable emitted radiation of mixed light, the pixels each include at least two light-emitting diodes and, in operation, the light-emitting diodes emit in various colors so that the mixed light is composed of light of these light-emitting diodes, at least some of the pixels each include at least one light-emitting diode, which at least intermittently is operated as a photodetector and measures a brightness, by the measured brightness, an emittance of each of the affected light-emitting diodes or of the affected pixel is ascertained, and the light-emitting diodes are triggered in accordance with the ascertained emittance so that aging of the light-emitting diodes is at least partly compensated for.. . ... Osram Opto Semiconductors Gmbh

01/11/18 / #20180013043

Optoelectronic semiconductor component, optoelectronic arrangement and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.. . ... Osram Opto Semiconductors Gmbh

01/11/18 / #20180012801

Method for producing a plurality of semiconductor chips and semiconductor chip

According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.. ... Osram Opto Semiconductors Gmbh

01/04/18 / #20180006196

Optoelectronic semiconductor component and method for producing same

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. ... Osram Opto Semiconductors Gmbh

01/04/18 / #20180006193

Optoelectronic module and a process for the production of an optoelectronic module

An optoelectronic module (100) is defined, comprising at least one semiconductor chip (10) provided for emitting electromagnetic radiation and at least one holding device (20) which is adapted to fix in place a device (50) for encoding at least one optical or electronic parameter of the optoelectronic module (100). Furthermore, a process for the production of the optoelectronic module (100) is defined.. ... Osram Opto Semiconductors Gmbh

01/04/18 / #20180005924

Lead frame and method of producing a chip housing

A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.. . ... Osram Opto Semiconductors Gmbh

12/28/17 / #20170373233

Lead frame

A lead frame is disclosed. In an embodiment, the lead frame includes a frame having a plurality of lead frame sections, wherein the lead frame sections are connected to the frame, wherein the frame has at least two longitudinal sides and at least two transverse sides, wherein at least in one longitudinal side includes an imprint, and wherein the imprint bolsters stability of the longitudinal side against sagging.. ... Osram Opto Semiconductors Gmbh

12/28/17 / #20170373220

Optoelectronic component

An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic radiation, wherein the active zone has at least two quantum films, wherein the first quantum film is arranged between a first barrier layer and a second barrier layer, wherein the second quantum film is arranged between the second barrier layer and a last barrier layer, and wherein bandgaps of the first barrier layer and of the second barrier layer are related differently to one another than bandgaps of the second barrier layer and of the last barrier layer.. ... Osram Opto Semiconductors Gmbh

12/21/17 / #20170365982

Edge-emitting semiconductor laser and method for operating a semiconductor laser

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. ... Osram Opto Semiconductors Gmbh

12/21/17 / #20170365752

Conversion element, optoelectronic semiconductor device and method for producing conversion elements

Disclosed is a conversion element (100). The conversion element (100) comprises: a conversion coating (16), which contains a wavelength-converting conversion material; a first encapsulation coating (30) on a first main surface (20) of the conversion coating, said first encapsulation coating having a thickness of between 10 μm and 500 μm; and a second encapsulation coating (32) on a second main surface (22) of the conversion coating, said second encapsulation coating having a thickness of between 0.1 μm and 20 μm. ... Osram Opto Semiconductors Gmbh

12/21/17 / #20170365751

Optoelectronic element and optoelectronic component

The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).. ... Osram Opto Semiconductors Gmbh

12/21/17 / #20170365749

Optoelectronic arrangement having a radiation conversion element and method for producing a radiation conversion element

An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. ... Osram Opto Semiconductors Gmbh

12/21/17 / #20170365736

Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.. ... Osram Opto Semiconductors Gmbh

12/14/17 / #20170358719

Semiconductor layering sequence for generating visible light and light emitting diode

In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. ... Osram Opto Semiconductors Gmbh

12/14/17 / #20170358718

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. ... Osram Opto Semiconductors Gmbh

12/07/17 / #20170352700

Display device and method for producing a display device

A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device also includes a carrier. ... Osram Opto Semiconductors Gmbh

12/07/17 / #20170352535

Method of producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A method of producing an optoelectronic semiconductor chip includes in order: a) creating a nucleation layer on a growth substrate, b) applying a mask layer on to the nucleation layer, c) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, d) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, e) growing a multiple quantum well structure on the coalescence layer, f) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and g) detaching the growth substrate and creating a roughening by etching.. . ... Osram Opto Semiconductors Gmbh

11/30/17 / #20170345977

Conversion element and production method thereof

A method for the production of a conversion element (3) is disclosed, which comprises the following steps: a) provision of a first covering member (1) which has a first connecting surface (1a) and of a second covering member (2), b) insertion of at least one cavity (10) into the first covering member (1) on the first connecting surface (1a), c) filling of the at least one cavity (10) with a filling compound (30), which comprises a conversion material (31), d) applying of the second covering member (2) to the first connecting surface (1a) of the first covering member (1), e) cohesive connection of the first covering member (1) and of the second covering member (2).. . ... Osram Opto Semiconductors Gmbh

11/30/17 / #20170345966

Method of producing a semiconductor body

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.. . ... Osram Opto Semiconductors Gmbh

11/23/17 / #20170338626

Laser diode chip

A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. ... Osram Opto Semiconductors Gmbh

11/23/17 / #20170338384

Semiconductor device and method for producing a plurality of semiconductor devices

A semiconductor device and a method for producing a plurality of semiconductor devices are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. ... Osram Opto Semiconductors Gmbh

11/23/17 / #20170338217

Optoelectronic semiconductor chip and method for fabrication thereof

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. ... Osram Opto Semiconductors Gmbh

11/23/17 / #20170337031

Optoelectronic lighting device, video wall module and signal transmitter for a light signaling installation

An optoelectronic lighting device includes a carrier, a plurality of light-emitting optoelectronic components arranged on an upper side of the carrier, and at least one layer of a hydrophobic aerogel that protects the plurality of light-emitting optoelectronic components from influences of moisture. A video wall module includes the optoelectronic light device. ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170331257

Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip

A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).. ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170331019

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor component includes a carrier having a carrier top side and an opposing carrier underside, wherein the carrier top sides each have a larger area than the associated carrier undersides, the carrier parts fixedly connect to one another via at least one potting body and the potting body together with the carrier parts represents a bearing component of the semiconductor component so that all carrier undersides end flush with the potting body, the light-emitting semiconductor chips electrically connect in series, the metal layer on the carrier top side is structured into conductor tracks and into electrical connection surfaces, and the electrical connection surfaces on the carrier top side are electrically insulated from the associated carrier underside so that the carrier underside of the carrier part the semiconductor chips are arranged on is potential-free and is completely covered with the metal layer.. . ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170331018

Optoelectronic component and method for the production thereof

An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein the optoelectronic semiconductor chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, a second top side metallization is arranged on the top side of the composite body and electrically insulated with respect to the first top side metallization, the second top side metallization completely delimits a part of the top side of the optoelectronic semiconductor chip, and a wavelength-converting material is arranged in a region completely delimited by the second top side metallization on the top side of the composite body, the wavelength-converting material extending as far as the second top side metallization.. . ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170331015

Optoelectronic component and illumination device

An optoelectronic component includes an optoelectronic semiconductor chip and an optical element, wherein the optical element includes a prism structure configured to split light emitted by the semiconductor chip into two beams and deflect the beams in a first direction relative to one another, and the optical element includes a beam deflecting structure configured to deflect both beams jointly in a second direction perpendicular to the first direction.. . ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170330997

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.. ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170330996

Semiconductor chip and method for producing a semiconductor chip

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).. ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170330981

Component and method for producing a component

A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. ... Osram Opto Semiconductors Gmbh

11/16/17 / #20170330757

Method for producing a semiconductor chip and semiconductor chip

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.. ... Osram Opto Semiconductors Gmbh








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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Osram Opto Semiconductors Gmbh in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Osram Opto Semiconductors Gmbh with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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