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Phison Electronics Corp patents


Recent patent applications related to Phison Electronics Corp. Phison Electronics Corp is listed as an Agent/Assignee. Note: Phison Electronics Corp may have other listings under different names/spellings. We're not affiliated with Phison Electronics Corp, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "P" | Phison Electronics Corp-related inventors


Channel switching device, memory storage device and channel switching method

A channel switching device, a memory storage device and a channel switching method are provided. The channel switching device includes a signal analysis module and a switch module. ... Phison Electronics Corp

Memory management method, memory storage device and memory control circuit unit

A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: obtaining a usage status of a first physical unit of a rewritable non-volatile memory module for storing data from a host system; determining a first rule according to the usage status; and performing a first operation according to the first rule. ... Phison Electronics Corp

Data storage method, memory storage device and memory control circuit unit

A data storage method, a memory storage device and a memory control circuit unit are provided. The method includes: determining a first space in a first physical unit of a rewritable non-volatile memory module; and storing at least part of data stored in at least one physical unit of the rewritable non-volatile memory module to a second space in the first physical unit, and the second space is not belonging to the first space, and the first space is for ensuring that valid data stored in at least one second physical unit among the at least one physical unit can be stored to the first physical unit. ... Phison Electronics Corp

Data writing method, memory control circuit unit and memory storage apparatus

A data writing method for a rewritable non-volatile memory module having a plurality of physical erasing units and a memory control circuit unit and a memory storage apparatus using the same are provided. Each of the physical erasing units has a plurality of physical programming unit sets, and each of the physical programming unit sets has a plurality of physical programming unit. ... Phison Electronics Corp

Memory management method, memory control circuit unit and memory storage device

A memory management method, a memory control circuit unit and a memory storage device are provided, wherein the memory storage device includes a rewritable non-volatile memory module and a buffer memory. The method includes: loading at least one first address information of at least one first logical-physical mapping table from the rewritable non-volatile memory module to a first buffer area when the memory storage device is operated in a first mode, wherein the first address information has a first data quantity; and loading at least one second address information of at least one second logical-physical mapping table from the rewritable non-volatile memory module to the first buffer area when the memory storage device is operated in a second mode, wherein the second address information has a second data quantity, and the first data quantity is less than the second data quantity.. ... Phison Electronics Corp

Two pass memory programming method, memory control circuit unit and memory storage apparatus

The memory programming method includes: applying a first programming parameter set to program first data stream into a first physical programming unit, and the first physical programming unit is composed of memory cells at intersections between a first bit line string of a physical erasing unit and a first word line layer of the physical erasing unit. The memory programming method further includes applying a second programming parameter set to program the first data stream into all of the memory cells of the first physical programming unit again after completely programming the first data stream into all of the memory cells of the first physical programming unit.. ... Phison Electronics Corp

Decoding method, memory storage device and memory control circuit unit

. . A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving a first write command and first data corresponding to the first write command, and writing the first data into a third physical erasing unit in first physical erasing units; and if a usage frequency of a fourth physical erasing unit in the first physical erasing units is less than a predetermined value, performing a data arrangement operation corresponding to the first write command to copy second data stored by the fourth physical to at least one of second physical erasing units.. In one exemplary embodiment, the decoding method includes: reading first data from a plurality of first memory cells of a rewritable non-volatile memory module; performing a first decoding operation on the first data based on a first decoding condition; and performing a second decoding operation on the first data based on a second decoding condition if the first decoding operation conforms to a first default status, where a strict level of locating an error bit in the first data based on the second decoding condition is higher than a strict level of locating the error bit in the first data based on the first decoding condition. Therefore, a decoding efficiency of a memory storage device can be improved.. ... Phison Electronics Corp

Decoding method, memory controlling circuit unit and memory storage device

A decoding method, a memory controlling circuit unit and a memory storage device are provided. The decoding method includes: performing a first type decoding operation for a first frame including a first codeword to obtain a second codeword. ... Phison Electronics Corp

Mapping table updating method, memory control circuit unit and memory storage device

A mapping table updating method, a memory control circuit unit and a memory storage device are provided. The mapping table updating method includes: recording first mapping information as a mapping relation between a first virtual block and a first physical erasing unit; recording second mapping information as a mapping relation between the first virtual block and a second virtual block, and the second virtual block is mapped to the first physical erasing unit; and updating the second mapping information as a mapping relation between the first virtual block and a third virtual block if copying data belonging to the first physical erasing unit to a second physical erasing unit, and the third virtual block is mapped to the second physical erasing unit.. ... Phison Electronics Corp

Data writing method, memory control circuit unit and memory storage apparatus

A data writing method for a rewritable non-volatile memory module is provided. The method includes grouping physical erasing units of a rewritable non-volatile memory module at least into a first area and a second area, wherein the second area is programmed with a single-page programming mode and the first area is programmed with a multi-page programming mode. ... Phison Electronics Corp

Memory control circuit unit, memory storage device and signal receiving method

A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. ... Phison Electronics Corp

Data writing method, memory control circuit unit and memory storage device

A data writing method, a memory control circuit unit and a memory storage device are provided. The method includes: receiving a first write command and writing data corresponding to the first write command into a buffer memory; and writing the data corresponding to the first write command from the buffer memory to at least one first physical programming unit of a first physical erasing unit by using a single page programming mode if a write cache function is disabled and the data of the first write command is stored into the buffer memory, in which the at least one first physical programming unit is constituted by a plurality of first memory cells and each of the first memory cells only stores one bit of data in the single page programming mode.. ... Phison Electronics Corp

Memory storage device and power management method thereof

A memory storage device having a rewritable non-volatile memory module, a first connection interface unit, a second connection interface unit, a power management circuit and a memory control circuit unit is provided. When an external power supply device is electrically connected to the second connection interface unit, the power management circuit receives a second power supply voltage from the external power supply device via the second connection interface unit, supplies an operation voltage to the rewritable non-volatile memory module and the memory control circuit unit and supplies the second power supply voltage to a host device. ... Phison Electronics Corp

Trim command processing method, memory control circuit unit and memory storage apparatus

A trim command processing method for a memory storage apparatus having a rewritable non-volatile memory module having a plurality of physical programming units is provided. The method includes receiving a command from a host system; starting a trim operation to perform an operation corresponding to a trim command according to a record related to the trim command in a trim table if an operation corresponding the command is performed on the rewritable non-volatile memory module with a first mode; and not starting aforesaid trim operation if the operation corresponding the command is performed on the rewritable non-volatile memory module with a second mode.. ... Phison Electronics Corp

10/12/17 / #20170294217

Decoding method, memory storage device and memory control circuit unit

A decoding method, a memory storage device and a memory control circuit unit are provided. The method includes: reading data from a plurality of first memory cells of a rewritable non-volatile memory module; estimating an error bit occurrence rate of the data before performing a first decoding process on the data; and performing the first decoding process on the data by using a first decoding parameter according to the estimated error bit occurrence rate, wherein the first decoding parameter corresponds to a strict level for locating an error bit in the first decoding process. ... Phison Electronics Corp

09/28/17 / #20170277436

Memory management method, memory storage device and memory control circuit unit

A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving first data; performing a first programming process and determining whether a total number of a first-type physical unit is no larger than a first threshold value, wherein each physical unit belonging to the first-type physical unit does not store valid data; performing a data merging process if the total number is no larger than the first threshold value; determining whether the first data is first-type data; stopping the data merging process before the total number of the first-type physical unit reaches a second threshold value if the first data is the first-type data. ... Phison Electronics Corp

09/21/17 / #20170269873

Memory management method, memory control circuit unit and memory storage device

A memory management method for a rewritable non-volatile memory module is provided. The memory management method includes using a first management mode to manage the rewritable non-volatile memory module after the rewritable non-volatile memory module is powered on; and using a second management mode to manage the rewritable non-volatile memory module if a shut down command is received from a host system, wherein the second management mode is different from the first management mode and the second management mode executes at least one mandatory processing procedure in background.. ... Phison Electronics Corp

09/14/17 / #20170262197

Memory managing method, memory control circuit unit and memory storage apparatus

A memory managing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: setting a read-disturb threshold for each of a plurality of physical erasing units; adjusting the read-disturb threshold of a first physical erasing unit according to state information of a rewritable non-volatile memory module; and performing a read-disturb prevention operation according to the read-disturb threshold of the first physical erasing unit.. ... Phison Electronics Corp

09/07/17 / #20170255511

Decoding method, memory control circuit unit and memory storage apparatus

A decoding method for a rewritable non-volatile memory module is provided. The method includes reading data from a plurality of memory cells of the rewritable non-volatile memory module according to a first voltage, wherein the data includes a user data string and an error checking and correcting code set. ... Phison Electronics Corp

09/07/17 / #20170255389

Data transmitting method, memory control circuit unit and memory storage device

A data transmitting method for a memory storage device is provided. The method includes: detecting a temperature of the memory storage device; and determining whether the temperature of the memory storage device is greater than a temperature threshold. ... Phison Electronics Corp

08/24/17 / #20170242748

Decoding method, memory storage device and memory control circuit unit

A decoding method, a memory storage device and a memory control circuit unit are provided. The decoding method includes: programming a first memory cell in a rewritable non-volatile memory module; reading the first memory cell based on a first hard-decision voltage level to obtain first hard-bit information and perform a hard-decoding process accordingly; if the hard-decoding process fails and the first memory cell belongs to a first type memory cell, reading the first memory cell based on a second hard-decision voltage level to obtain second hard-bit information and perform another hard-decoding process accordingly; if the hard-decoding process fails and the first memory cell belongs to a second type memory cell, reading the first memory cell based on multiple second soft-decision voltage level to obtain soft-bit information and perform soft-decoding process accordingly. ... Phison Electronics Corp

08/24/17 / #20170242597

Wear leveling method, memory control circuit unit and memory storage device

A wear leveling method, a memory control circuit unit and a memory storage device are provided. The method includes: selecting a first physical erasing unit from physical erasing units not stored with valid data according to erase counts, and selecting a second physical erasing unit having a valid data amount being less than a capacity of one physical erasing unit from the physical erasing units stored with the valid data. ... Phison Electronics Corp

08/10/17 / #20170228172

Memory management method, memory control circuit unit and memory storage device

A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: determining whether a relative relation between a first wear value of first physical erasing units initially configured to be programmed based on a first programming mode and a second wear value of second physical erasing units initially configured to be programmed based on a second programming mode is satisfied; and when the relative relation between the first wear value and the second wear value is not satisfied, selecting at least one third physical erasing unit from second physical erasing units. ... Phison Electronics Corp

08/10/17 / #20170228171

Data writing method, memory control circuit unit and memory storage apparatus

A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: determining whether receiving a predetermined command from a host system. ... Phison Electronics Corp

08/10/17 / #20170228162

Memory management method, memory control circuit unit and memory storage device

A memory management method for a rewritable non-volatile memory module is provided. The memory management method includes receiving an adjust command from a host system, wherein the adjust command is configured to indicate that data stored in at least one logical unit of a plurality of logical units is invalid; updating a logical address status table according to the adjust command, wherein the logical address status table reflects a data status of the data stored in each of the logical units, wherein the data status includes a first state or a second state; and updating a physical address status table according to the logical address status table and the physical address status table if a predetermined condition is met, wherein the physical address status table reflects a data status of data stored in each of a plurality of physical programming units.. ... Phison Electronics Corp

08/03/17 / #20170220273

Data protecting method, memory control circuit unit and memory storage device

A data protecting method, a memory control circuit unit and a memory storage device are provided. The method includes repeatedly reading data from a first physical programming unit of a first physical erasing unit during an initialization operation after the memory storage device is powered on, wherein the first physical programming unit is the last programmed physical programming unit before the memory storage device is powered off. ... Phison Electronics Corp

07/20/17 / #20170206005

Data search method, memory storage apparatus, and memory control circuit unit

A data search method, a memory storage apparatus, and a memory control circuit unit are provided. The method includes: detecting a boot signal; sending a first read command sequence based on a first grouping rule corresponding to grouping a first number of physical sub-units into one physical unit and then determining whether a system information of a rewritable non-volatile memory module is read; sending a second read command sequence based on a second grouping rule corresponding to grouping a second number of physical sub-units into one physical unit if the system information is not read; and operating the rewritable non-volatile memory module based on the system information. ... Phison Electronics Corp

07/13/17 / #20170199669

Memory management method, memory control circuit unit, and memory storage apparatus

A memory management method is provided. The method includes receiving a write command, a first data, and a first instruction information corresponding to the write command, wherein the first instruction information instructs writing the first data into at least one first logical sub-unit of a first logical unit; executing load-align operation to the first data according to the first instruction information; writing an aligned first data obtained through the load-align operation into a first physical programming unit if a predetermined event does not occur during the load-align operation; and stopping the load-align operation and storing the first data and the first instruction information into a first physical erasing unit if the predetermined event occurs during the load-align operation, wherein the first instruction information is stored as a first valid bits information corresponding to the first data in the first physical erasing unit.. ... Phison Electronics Corp

07/06/17 / #20170192716

Data writing method, memory control circuit unit and memory storage apparatus

A data writing method, a memory control circuit unit, and a memory storage apparatus are provided. The method includes recording a flush command counting (fcc) value, and updating the fcc value whenever receiving a flush command from a host system. ... Phison Electronics Corp

06/29/17 / #20170185337

Memory management method, memory control circuit unit and memory storage device

A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes recording use information according to each physical erasing unit of a rewritable non-volatile memory module. ... Phison Electronics Corp

06/22/17 / #20170177260

Memory management method, memory control circuit unit and memory storage device

A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes: configuring a plurality of first type super physical units, and each of the first type super physical units includes at least two good physical erasing units which may be programmed simultaneously. ... Phison Electronics Corp

06/15/17 / #20170168893

Data reading method, memory control circuit unit and memory storage apparatus

A data reading method for a rewritable non-volatile memory module is provided. The method includes performing an error correction decoding operation on an user data stream according to an error checking and correcting (ecc) code to generate a first decoded data stream; searching uncorrectable sub-data units from decoded sub-data units of the first decoded data stream; selecting a target sub-data unit from the uncorrectable sub-data units; adjusting the target sub-data unit in the first decoded data stream to generate an adjusted user data stream; and re-performing the error correction decoding operation on the adjusted user data stream to generate a second decoded data stream; if the second decoded data stream has no error bit, transmitting the second decoded data stream as a corrected data stream to a host system.. ... Phison Electronics Corp

06/08/17 / #20170160961

Memory management method, memory control circuit unit, and memory storage apparatus

A memory management method for a rewritable non-volatile memory module is provided. The memory management method includes determining whether a special event occurs; determining a type of at least one event in a work queue if the special event occurs, wherein the work queue stores a plurality of events and each event among the events is respectively configured to execute one corresponding work; adjusting the work executed by the at least one event from a first work to a second work according to the type of the at least one event, wherein the first work is different from the second work; and waiting to execute the second work after adjusting the first work to the second work.. ... Phison Electronics Corp

06/01/17 / #20170154656

Data programming method and memory storage device

A data programming method and a memory storage device are provided. The method includes: programming a plurality of first type physical units in a rewritable non-volatile memory module to store first data; encoding the first data to generate encoded data; receiving second data; and programming at least one of a plurality of second type physical units in the rewritable non-volatile memory module corresponding to the first type physical units to store at least a part of the second data after the first data is encoded. ... Phison Electronics Corp

05/18/17 / #20170139642

Buffer memory management method, memory control circuit unit and memory storage device

A buffer memory management method, a memory control circuit unit and a memory storage device are provided. The method includes allocating a first zone and a second zone in the buffer memory for temporarily storing a plurality of logical address-physical address mapping tables and performing a restore operation on the first zone. ... Phison Electronics Corp

05/18/17 / #20170139593

Buffer memory management method, memory control circuit unit and memory storage device

A data access method for a memory storage device is provided. The memory storage device includes a rewritable non-volatile memory module and a buffer memory. ... Phison Electronics Corp

05/11/17 / #20170132069

Method and system for data rebuilding and memory control circuit unit thereof

A method and a system for data rebuilding and a memory control circuit unit thereof are provided. The method includes reading a plurality of physical-logical mapping information and a plurality of time information corresponding to the physical-logical mapping information stored in a rewritable non-volatile memory module. ... Phison Electronics Corp

04/27/17 / #20170115925

Valid data merging method, memory controller and memory storage apparatus

A valid data merging method, a memory controller and a memory storage apparatus are provided. The method includes: grouping physical erasing units in a data area to at least a first group and a second group; selecting a first physical erasing unit from the second group; and copying valid data of the first physical erasing unit to a second physical erasing unit. ... Phison Electronics Corp

04/20/17 / #20170109097

Memory control circuit unit, data transmitting method and memory storage device

A memory control circuit unit, a memory storage device and a data transmitting method are provided. The memory storage device coupled to a first host system includes a reset pin. ... Phison Electronics Corp

03/23/17 / #20170083451

Buffer memory management method, memory control circuit unit and memory storage device

A buffer memory management method, a memory control circuit unit and a memory storage device are provided. The buffer memory management method includes allocating a mapping table zone having a first zone and a second zone in the buffer memory, and temporarily storing a plurality of logical address-physical address mapping tables into the first zone and the second zone, and receiving a first write command which indicates writing first data into a first logical address. ... Phison Electronics Corp

02/23/17 / #20170052720

Data protection method, memory contorl circuit unit and memory storage apparatus

A data protection method for a memory storage apparatus is provided. The method includes obtaining a current system time from a host system as a boot time, if the memory storage apparatus is powered on, and a basic input/output system of the host system loads and executes instruction programs in the expansion rom of the memory storage apparatus for transmitting the current system time to the memory storage apparatus. ... Phison Electronics Corp

02/23/17 / #20170052704

Memory management method, memory control circuit unit and memory storage device

The disclosure provides a memory management method, which includes: selecting at least one logical unit mapped to physical units programmed based on a first operating mode; determining a reference count according to a number of the selected logical unit; receiving a first write command; determining whether the reference count is greater than a threshold value; if the reference count is greater than the threshold value, programming first data into a first physical unit based on the first operating mode, and each memory cell in the first physical unit stores a first number of bit data; if the reference count is not greater than the threshold value, programming the first data into a second physical unit based on a second operating mode, and each memory cell in the second physical unit stores a second number of bit data, and the second number is greater than the first number.. . ... Phison Electronics Corp

02/16/17 / #20170046068

Memory management method, memory control circuit unit and memory storage device

A memory management method for a rewritable non-volatile memory module is provided. The method includes: selecting at least one first physical erasing unit from at least part of physical erasing units according to a first parameter. ... Phison Electronics Corp

02/09/17 / #20170039141

Mapping table updating method, memory storage device and memory control circuit unit

A mapping table updating method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a write command; recording physical-to-logical mapping information of write data corresponding to the write command into a first mapping table in a buffer memory; storing the physical-to-logical mapping information of the write data into a physical unit in a rewritable non-volatile memory module according to the first mapping table; updating the physical-to-logical mapping information of the write data recorded in the first mapping table, where the updated physical-to-logical mapping information only includes partial information of the physical-to-logical mapping information; and updating a second mapping table according to the updated physical-to-logical mapping information recorded in the first mapping table. ... Phison Electronics Corp

02/09/17 / #20170038977

Valid data merging method, memory controller and memory storage apparatus

A valid data merging method, a memory controller and a memory storage apparatus are provided. The method includes: selecting a first physical erasing unit, and loading a first logical address-physical address mapping table according to a physical address-logical address mapping table. ... Phison Electronics Corp

02/02/17 / #20170031436

Eye-width detector, memory storage device and eye-width detection method of data signal

An eye-width detector, a memory storage device and an eye-width detection method of data signal are provided. The eye-width detector includes a phase interpolator, a calibration circuit and an eye-width detection circuit. ... Phison Electronics Corp

01/26/17 / #20170024153

Mapping table accessing method, memory control circuit unit and memory storage device

A mapping table accessing method for a rewritable non-volatile memory module is provided. The method includes: storing a mapping record corresponding to a first physical erasing unit into the first physical erasing unit, wherein the mapping record of the first physical erasing unit is a mapping relation of physical programming units in the first physical erasing unit. ... Phison Electronics Corp

01/26/17 / #20170024136

Memory management method, memory control circuit unit and memory storage device

A memory management method, a memory control circuit unit and a memory storage device are provided. In an exemplary embodiment, the memory management method includes: receiving a first write command and first write data and obtaining a first number; programming the first write data and moving first storage data stored in a plurality of first physical programming units, where a total number of the first physical programming units conforms to the first number; receiving a second write command and second write data and obtaining a second number; programming the second write data and moving second storage data stored in a plurality of second physical programming units, where a total number of the second physical programming units conforms to the second number; and erasing at least one physical erasing unit. ... Phison Electronics Corp

01/19/17 / #20170019116

Clock and data recovery circuit module and phase lock method

A clock and data recovery circuit module and a phase lock method are provided. The module includes a phase detection circuit, a converter circuit and a voltage control oscillation circuit. ... Phison Electronics Corp

01/19/17 / #20170017570

Mapping table updating method, memory control circuit unit and memory storage device

A mapping table updating method for a rewritable non-volatile memory module is provided. The method includes: allocating a mapping table storage area for storing a physical address-logical address mapping table in a buffer memory. ... Phison Electronics Corp

01/12/17 / #20170010961

Wear leveling method, memory storage device and memory control circuit unit

A wear leveling method for a rewritable non-volatile memory module is provided. The method includes: recording a timestamp for each of physical erasing units storing valid data according to a programming sequence of the physical erasing units storing valid data among the physical erasing units, and recording an erase count for each of physical erasing units. ... Phison Electronics Corp

01/05/17 / #20170003897

Memory management method, memory control circuit unit and memory storage apparatus

A memory management method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving a first write command and writing data corresponding to the first write command into a first spare physical erasing unit; detecting an amount of second spare physical erasing units excluding the first spare physical erasing unit; determining whether the amount of the second spare physical erasing units is less than a threshold value; and performing a first procedure if the amount of the second spare physical erasing units is less than the threshold value. ... Phison Electronics Corp








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