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Picosun Oy patents

Recent patent applications related to Picosun Oy. Picosun Oy is listed as an Agent/Assignee. Note: Picosun Oy may have other listings under different names/spellings. We're not affiliated with Picosun Oy, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "P" | Picosun Oy-related inventors

Atomic layer deposition with plasma source

The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.. ... Picosun Oy

Ald method and apparatus including a photon source

A deposition method, including providing a channel through a deposition apparatus, feeding precursor vapor into the channel, and depositing material from the precursor vapor onto a substrate on its way through the deposition apparatus by exposing the substrate to the precursor vapor and to alternating photon exposure and shade periods within the channel.. . ... Picosun Oy

Ald method and apparatus

A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously.. . ... Picosun Oy

Protecting an interior of a hollow body with an ald coating

An apparatus and method for protecting an interior of a hollow body, where an inlet and exhaust manifold include a port assembly attachable to an opening of the hollow body is provided. The interior of the hollow body is exposed to sequential self-saturating surface reactions by sequential inlet of reactive gases via the port assembly and the opening into the interior of the hollow body, and excess gases is pumped via the opening and the port assembly out from the hollow body.. ... Picosun Oy

Atomic layer deposition of germanium or germanium oxide

A process of depositing germanium on a substrate includes sequentially exposing in at least one deposition cycle the substrate inside a chamber with a ge-containing precursor and a reducing or oxidizing precursor.. . ... Picosun Oy

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Picosun Oy in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Picosun Oy with additional patents listed. Browse our Agent directory for other possible listings. Page by