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Playnitride Inc patents


Recent patent applications related to Playnitride Inc. Playnitride Inc is listed as an Agent/Assignee. Note: Playnitride Inc may have other listings under different names/spellings. We're not affiliated with Playnitride Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "P" | Playnitride Inc-related inventors


 new patent  Micro light-emitting diode chip

A micro light-emitting diode chip includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer, and the epitaxial structure further includes a first surface, side surface and a second surface opposite to the first surface. ... Playnitride Inc

 new patent  Micro light emitting diode chip and display panel

A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. ... Playnitride Inc

 new patent  Display panel

A display panel including a backplane and a plurality of micro leds is provided. The backplane includes a plurality of sub-pixels. ... Playnitride Inc

Display device

A display device including a backplane, a plurality of light-emitting devices, a first distributed bragg reflector layer and a second distributed bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. ... Playnitride Inc

Light-emitting diode chip

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer, an n-type semiconductor layer, and a first metal electrode is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. ... Playnitride Inc

Light emitting diode chip

A light-emitting diode chip including a p-type semiconductor layer, a light-emitting layer and an n-type semiconductor layer is provided. The light-emitting layer is disposed between the p-type semiconductor layer and the n-type semiconductor layer. ... Playnitride Inc

Light emitting diode chip

A light emitting diode (led) chip has an inclined notch. The inclined notch has at least one inclined surface. ... Playnitride Inc

Display and repair method thereof

A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. ... Playnitride Inc

Manufacturing method of display

A manufacturing method of a display including the following steps is provided. Firstly, a back plate, a first transfer platform and a second transfer platform are provided, wherein a plurality of first light-emitting devices are disposed on the first transfer platform, and a plurality of second light-emitting devices are disposed on the second transfer platform. ... Playnitride Inc

Semiconductor laser device

A semiconductor laser device includes a semiconductor epitaxial structure, an electrode pad layer, and a transparent conductive layer. The semiconductor epitaxial structure includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. ... Playnitride Inc

Light emitting device and manufacturing method thereof

A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. ... Playnitride Inc

Light source module

A light source module is adapted to perform a light irradiation process on an object. The light source module includes a transparent cover, a reflector and a light emitting unit. ... Playnitride Inc

Light emitting device

A light emitting device of the invention includes a substrate, an electrode connection layer, and at least one epitaxial structure. The substrate has an upper surface and a plurality of electrode pads disposed on the upper surface. ... Playnitride Inc

Light emitting device

A light emitting device includes a substrate, a plurality of micro light emitting chips and a plurality of conductive bumps. The substrate has a plurality of pads. ... Playnitride Inc

11/09/17 / #20170323873

Light emitting device

A light emitting device includes a carrier, a plurality of light emitting diode chips and a plurality of buffer pads. Each light emitting diode chip includes a first type semiconductor layer, an active layer, a second type semiconductor layer, a via hole and a plurality of bonding pads. ... Playnitride Inc

08/10/17 / #20170229430

Light emitting device

A light emitting device includes a substrate, micro light emitting chips, reflective structures and conductive bumps. The substrate has pads. ... Playnitride Inc

07/06/17 / #20170194541

Light emitting device

A light emitting device includes a substrate, a conductive electrode connection layer, at least one epitaxial structure and an insulating layer. The substrate had an upper surface and a lower surface opposite to each other. ... Playnitride Inc

07/06/17 / #20170194529

Nitride based light emitting semiconductor device with desirable carbon to aluminum concentration ratio

A semiconductor light-emitting device including at least one n-type semiconductor layer, at least one p-type semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is disposed between the at least one p-type semiconductor layer and the at least one n-type semiconductor layer. ... Playnitride Inc

05/18/17 / #20170141262

Semiconductor light emitting device

A semiconductor light emitting device including an n-type semiconductor layer, a p-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the n-type semiconductor layer and the p-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. ... Playnitride Inc

05/11/17 / #20170133552

Semiconductor light-emitting device

A semiconductor light-emitting device including a p-type semiconductor cladding layer, an n-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The p-type semiconductor cladding layer is doped with magnesium. ... Playnitride Inc

03/09/17 / #20170069804

Method for manufacturing light emitting device

A method for manufacturing a light emitting device is provided. Multiple epitaxial structures and multiple bonding pads formed thereon are formed on a growth substrate. ... Playnitride Inc

03/09/17 / #20170069803

Light emitting device and manufacturing method thereof

A light emitting device includes a first substrate, a second substrate and a plurality of micro epitaxial structures. The second substrate is disposed opposite to the first substrate. ... Playnitride Inc

03/09/17 / #20170069796

Light emitting device with epitaxial structure

A light emitting device includes a carrier, at least one epitaxial structure, at least one buffer pad and at least one bonding pad. The epitaxial structure is disposed on the carrier. ... Playnitride Inc

02/23/17 / #20170051907

Light emitting device

A light emitting device includes a heat dissipation casing and an led module. The heat dissipation casing includes an upper cover, a lower cover and a plurality of side covers. ... Playnitride Inc








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



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