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Powerchip Technology Corporation patents


Recent patent applications related to Powerchip Technology Corporation. Powerchip Technology Corporation is listed as an Agent/Assignee. Note: Powerchip Technology Corporation may have other listings under different names/spellings. We're not affiliated with Powerchip Technology Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "P" | Powerchip Technology Corporation-related inventors


Manufacturing method of metal-insulator-metal device

The invention provides a manufacturing method of a metal-insulator-metal device, including: forming a first metal layer, an insulation layer, and a second metal layer sequentially on a base to form a metal-insulator-metal structure; forming a patterned mask layer on at least a portion of the second metal layer, etching the second metal layer and the insulation layer on which the patterned mask layer is not formed using an etchant without carbon; and cleaning the etched metal-insulator-metal structure using a mixed solution containing oxidants and metal oxide etchants to remove excess polymer remaining on the metal-insulator-metal structure.. . ... Powerchip Technology Corporation

Photomask and manufacturing method thereof

A photomask is provided. The photomask includes a substrate, a light-blocking main feature, and sub-resolution assist features (srafs). ... Powerchip Technology Corporation

Nonparametric method for measuring clustered level of time rank in binary data

A nonparametric method for measuring a clustered level of time rank in binary data is provided. A sample set of engineering data is classified into a target group and a reference group, and a rank is set to each sample in a chronological order. ... Powerchip Technology Corporation

Image sensor and related fabrication method

An image sensor includes a semiconductor substrate with at least one recess disposed on its surface and in the photosensitive area defined on the surface of the semiconductor substrate, a first-conductivity-type doped region disposed in the semiconductor substrate and in the photosensitive area, and a second-conductivity-type doped region disposed on the surface of the first-conductivity-type doped region and on the surface of the recess. A photosensitive device of the image sensor is formed of the first-conductivity-type doped region and the second-conductivity-type doped region.. ... Powerchip Technology Corporation

Integrated bio-sensor with nanocavity and fabrication method thereof

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. ... Powerchip Technology Corporation

Semiconductor memory deivce and accessing method thereof

The semiconductor memory device selectively switches at least two banks based on an input parallel address for writing or reading data, and includes a control unit, which controlled according to a following method: in a first data access, the semiconductor memory device is accessed according to the input parallel address; and then in a second data access and after, the semiconductor memory device is accessed according to a serial address different to the parallel address. Moreover, the semiconductor memory device is constructed by respectively connecting memory cells to intersections of word lines and bit lines, and the serial address contains: a 1st serial address for selecting one word line in the word lines, and a 2nd serial address for selecting one bit line in the bit lines.. ... Powerchip Technology Corporation

Method for manufacturing multilayer crown-shaped mim capacitor

A method for fabricating a multi-layer, crown-shaped mim capacitor is provided. A base having therein a conductive region within a capacitor-forming region is formed. ... Powerchip Technology Corporation

Phase shift mask and manufacturing method thereof

A phase shift mask including a substrate, a phase shift layer and a transparent layer is provided. The phase shift layer is disposed on the substrate and has an opening. ... Powerchip Technology Corporation

Latch circuit and semiconductor memory device

A latch circuit provided herein includes an input circuit including a pmos transistor that is configured for input and enables a signal current to flow into the pmos transistor; a first inverter comprising a first pmos transistor, a first nmos transistor, and a first node; a second inverter comprising a second pmos transistor, a second nmos transistor, and a second node. The signal current corresponds to a sense voltage from a sense amplifier. ... Powerchip Technology Corporation

Method, image processing system and computer-readable recording medium for item defect inspection

A method, image processing system, and computer-readable recording medium for item defect inspection are provided. The method is as follows. ... Powerchip Technology Corporation

Light pipe structure of image sensing device and fabricating method thereof

A light pipe structure of an image sensing device including a substrate, a dielectric layer, and a light-pipe material layer is provided. The substrate has a light sensing region therein. ... Powerchip Technology Corporation

Voltage calibration circuit capable of updating voltage to be calibrated automatically

A voltage calibration circuit includes a voltage output circuit, an amplifier, a notification circuit, and a built-in self-test circuit. The voltage output circuit selects a first voltage source to output an output voltage according to a selection signal. ... Powerchip Technology Corporation

Semiconductor device

A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. ... Powerchip Technology Corporation

Multilayer crown-shaped mim capacitor and manufacturing method thereof

A multi-layer, crown-shaped mim capacitor includes a base having therein conductive region, an inter-metal dielectric (imd) layer on the base, a capacitor trench penetrating through the imd layer and exposing the conductive region, a capacitor lower electrode structure including a first electrode and a second electrode surrounded by the first electrode, a conductive supporting pedestal within the capacitor trench for fixing and electrically connecting the bottom portions of the first and second electrodes, a capacitor dielectric layer conformally lining the first and second electrodes and a top surface of the conductive supporting pedestal, and a capacitor upper electrode on the capacitor dielectric layer.. . ... Powerchip Technology Corporation

02/02/17 / #20170033147

Image sensor device

An image sensor device includes a substrate having a pixel array region, isolation structures in the substrate separating pixel regions from one another in the pixel array region, a photo-sensing region in each of the pixel regions, and a reflective cavity structure in the substrate within each of the pixel region. The reflective cavity structure continuously extends from a bottom of the isolation structure to a deeper central portion of each of the pixel regions, thereby forming a dish-like profile. ... Powerchip Technology Corporation

01/19/17 / #20170018595

Method of fabricating light pipe of image sensing device

A method of fabricating a light pipe of an image sensing device including following steps is provided. A substrate is provided. ... Powerchip Technology Corporation

01/19/17 / #20170016830

Integrated bio-sensor with nanocavity and fabrication method thereof

A bio-sensor includes a substrate having a light-sensing region thereon. A first dielectric layer, a diffusion barrier layer, and a second dielectric layer are disposed on the substrate. ... Powerchip Technology Corporation

01/12/17 / #20170012080

Method of fabricating semiconductor device

A method of fabricating a semiconductor device includes the following steps. A substrate including an isolation region and a device region is provided. ... Powerchip Technology Corporation

01/12/17 / #20170012070

Semiconductor device and method of manufacturing the same

A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer, and a protection layer is provided. The sensor is located in the substrate of a first region. ... Powerchip Technology Corporation








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