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Qorvo Us Inc patents


Recent patent applications related to Qorvo Us Inc. Qorvo Us Inc is listed as an Agent/Assignee. Note: Qorvo Us Inc may have other listings under different names/spellings. We're not affiliated with Qorvo Us Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "Q" | Qorvo Us Inc-related inventors


Weakly coupled based harmonic rejection filter for feedback linearization power amplifier

Radio frequency (rf) filters configured to filter undesired signal components (e.g., noise and harmonics) from rf signals are disclosed. In one embodiment, an rf filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. ... Qorvo Us Inc

Rf power amplifier dynamic supply boosting circuit

Circuitry that includes a radio frequency (rf) power amplifier (pa) and a dynamic supply boosting circuit, is disclosed. The rf pa receives and amplifies an rf input signal to provide an rf transmit signal using a pa power supply voltage. ... Qorvo Us Inc

Passive magnetic devices

A passive magnetic device (pmd) has a base electrode, a multi-port signal structure (mpss), and a substrate therebetween. The mpss has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. ... Qorvo Us Inc

Integrated module with electromagnetic shielding

The present disclosure relates to a shielded integrated module, which includes a module substrate with a number of perimeter bond pads, at least one electronic component attached to the module substrate and encapsulated by a mold compound, a number of perimeter vertical shield contacts, and a shielding structure. The perimeter bond pads are surrounding the at least one electronic component and encapsulated by the mold compound. ... Qorvo Us Inc

Removable sacrificial connections for semiconductor devices

Methods of fabricating semiconductor devices and radio frequency (rf) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. ... Qorvo Us Inc

Method for manufacturing an integrated circuit package

This disclosure relates to integrated circuit (ic) packages and methods of manufacturing the same. In one method, a printed circuit board is provided with semiconductor die. ... Qorvo Us Inc

Tunable filter for lte bands

A tunable filter reduces the total number of filters used in tdd (time-division duplex) communication circuitry. The communication circuitry may include a tunable filter and a first switch associated with the tunable filter. ... Qorvo Us Inc

Coupled resonator structure

Various arrangements for electrically coupling the electrodes of coupled resonator structures (crses) to form unique two- and three-terminal devices as well as the use of such crses in filter networks are disclosed.. . ... Qorvo Us Inc

Air-cavity package with enhanced package integration level and thermal performance

The present disclosure relates to an air-cavity package, which includes a bottom substrate, a top substrate, a perimeter wall, a bottom electronic component, a top electronic component, and an external electronic component. The perimeter wall extends from a periphery of a lower side of the top substrate to a periphery of an upper side of the bottom substrate to form a cavity. ... Qorvo Us Inc

Bus interface system for power extraction

The present disclosure relates to a bus interface system including a bus line, master integrated circuitry (ic), and slave ic. The master ic is coupled to the bus line and configured to transmit the data signal to the slave ic through the bus line. ... Qorvo Us Inc

Continuous crystalline gallium nitride (gan) pn structure with no internal regrowth interfaces

A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (gan) pn structure is provided. The mask structure is provided over the foundation structure to expose a first area of a top surface of the foundation structure. ... Qorvo Us Inc

Electromagnetic shielding for integrated circuit modules

The present disclosure provides electromagnetic shielding for integrated circuit modules with a module-bottom sealing procedure. First a precursor package with a number of integrated modules is provided. ... Qorvo Us Inc

Heat transfer device incorporating a helical flow element within a fluid conduit

A liquid heat transfer device with improved heat transfer into a heating or cooling fluid is disclosed. The heat transfer device incorporates an element which creates a helical flow path through a fluid conduit to more efficiently dissipate heat within a space-constrained environment without increasing the diameter or overall length of the fluid conduit.. ... Qorvo Us Inc

Electronic component having field effect transistor cells

An electronic component made up of field-effect transistor (fet) cells is disclosed. Each fet cell includes a finger region having drain, gate, and source fingers disposed over a semiconductor substrate. ... Qorvo Us Inc

07/12/18 / #20180197829

Three-dimensional integrated circuit assembly with active interposer

Embodiments of the disclosure relate to a three-dimensional (3d) integrated circuit (ic) (3dic) assembly with active interposer. The 3dic assembly includes an antenna substrate having at least one electromagnetic radiating structure (e.g., an antenna) and a carrier substrate having layered conductive interconnects. ... Qorvo Us Inc

07/12/18 / #20180197803

Thermally enhanced semiconductor package with thermal additive and process for making the same

The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. ... Qorvo Us Inc

07/12/18 / #20180197800

Air-cavity package with dual signal-transition sides

The present disclosure relates to an air-cavity package, which includes a bottom substrate, a top substrate, a perimeter wall, a bottom electronic component, and a top electronic component. The bottom substrate includes a bottom signal via extending through the bottom substrate and the top substrate includes a top signal via extending through the top substrate. ... Qorvo Us Inc

07/05/18 / #20180192320

Reducing intermodulation distortion in a radio frequency circuit

Embodiments of the disclosure relate to reducing intermodulation distortion (imd) in a radio frequency (rf) circuit. In examples discussed herein, the rf circuit operates in an uplink carrier aggregation (ulca) mode to transmit an rf uplink signal simultaneously in a first uplink band and a second transmit band. ... Qorvo Us Inc

07/05/18 / #20180191067

Multi-band radio frequency circuit

Embodiments of the disclosure include a multi-band radio frequency (rf) circuit. The multi-band rf circuit includes antenna swapping circuitry coupled to multiple antenna ports that are coupled to multiple antennas, each capable of receiving and/or transmitting in one or more rf bands. ... Qorvo Us Inc

07/05/18 / #20180190801

Semiconductor device with multiple hbts having different emitter ballast resistances

The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (hbts) that have different emitter ballast resistances. The disclosed semiconductor device includes a substrate, a first hbt and a second hbt formed over the substrate. ... Qorvo Us Inc

06/28/18 / #20180183392

Gallium nitride power amplifier

A gallium nitride (gan) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first gan transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second gan transistor included in a different one of the plurality of amplifier stages.. ... Qorvo Us Inc

06/28/18 / #20180182903

Dual stack varactor

Embodiments include apparatuses and methods related to vertically stacked varactors. Specifically two varactors may be constructed of vertically stacked layers including an anode layer, a contact layer, and a varactor layer. ... Qorvo Us Inc

06/21/18 / #20180175851

Transistor-based radio frequency (rf) switch

Disclosed is a transistor-based switch having an n number of main field-effect transistors (fets) stacked in series such that a first terminal of a first main fet of the n number of main fets is coupled to a first end node and a second terminal of an nth main fet of the n number of main fets is coupled to a second end node, wherein n is a finite number greater than five. The transistor-based switch further includes a gate bias network having a plurality of gate resistors, wherein individual ones of the plurality of gate resistors are coupled to gate terminals of the n number of main fets. ... Qorvo Us Inc

06/21/18 / #20180175826

Bulk acoustic wave resonator with multilayer piezoelectric structure

A bulk acoustic wave (baw) resonator has a bottom electrode, a top electrode over the bottom electrode, and a multilayer piezoelectric structure between the bottom electrode and the top electrode. The multilayer piezoelectric structure has a first piezoelectric layer having a first electromechanical coupling coefficient and a second piezoelectric layer having a second electromechanical coupling coefficient that is different than the first electromechanical coupling coefficient.. ... Qorvo Us Inc

06/21/18 / #20180175821

Polarity patterned piezoelectric film

A piezoelectric device includes a foundation structure and a plurality of metal islands distributed over a first area of a top surface of the foundation structure. A piezoelectric film resides over the foundation structure and is formed from a piezoelectric material. ... Qorvo Us Inc

06/21/18 / #20180175813

Power amplifier with improved linearity

Power amplifier circuitry includes an amplifier stage, a non-linear compensation network, and non-linear compensation control circuitry. The amplifier stage includes an input and an output, and is configured to receive an input signal at the input and provide an amplified output signal at the output. ... Qorvo Us Inc

06/21/18 / #20180173258

Voltage regulator with fast transient response

Voltage regulators with fast transient response are provided herein. According to one aspect, a voltage regulator for accepting an input voltage (vref) and producing an output voltage (vout) comprises an operational amplifier having as a first input (vref) and having as a second input a feedback voltage (vfb); an output amplifier having an input coupled to the output of the operational amplifier and an output that produces vout, the output being coupled to a feedback path that produces vfb; a compensation capacitor (cc) connected between the output of the output amplifier and an input to a buffer amplifier that supplies a voltage to the input of the output amplifier. ... Qorvo Us Inc

06/14/18 / #20180167032

Radio frequency power amplifier with feed-forward signal path

An rf power amplifier includes a quadrature coupler, an in-phase amplifier, a quadrature amplifier, and a feed-forward signal path. The quadrature coupler includes an in-phase input node, a quadrature input node, an isolated node, and an rf signal output node. ... Qorvo Us Inc

06/14/18 / #20180166358

Thermally enhanced semiconductor package and process for making the same

The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the module substrate, a mold compound component, a thermally conductive film, and a thermally enhanced mold compound component. The mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. ... Qorvo Us Inc

06/07/18 / #20180159564

Multi-band radio frequency front-end circuit

Embodiments of the disclosure include a multi-band radio frequency (rf) front-end circuit. When a first antenna transmits an rf transmit signal in an rf transmit band, a second antenna may receive the rf transmit signal as an interference signal. ... Qorvo Us Inc

06/07/18 / #20180159563

Multi-band radio frequency circuit

Embodiments of the disclosure include a multi-band radio frequency (rf) circuit. The multi-band rf circuit includes multiple antenna ports coupled to multiple antennas and an antenna swapping circuit coupled to the multiple antenna ports. ... Qorvo Us Inc

06/07/18 / #20180159495

Guided saw device

A guided surface acoustic wave (saw) device includes a substrate, a piezoelectric layer on the substrate, and a transducer on the piezoelectric layer. The substrate is silicon, and has a crystalline orientation defined by a first euler angle (ϕ), a second euler angle (θ), and a third euler angle (ψ). ... Qorvo Us Inc

06/07/18 / #20180159484

Linear cmos pa with low quiescent current and boosted maximum linear output power

The present disclosure relates to a power amplifier (pa) system provided in a semiconductor device and having feed forward gain control. The pa system comprises a transmit path and control circuitry. ... Qorvo Us Inc

06/07/18 / #20180158775

High q factor inductor structure

A three-dimensional (3-d) inductor is incorporated in a substrate. The 3-d inductor has a first connector plate, a second connector plate, a third connector plate, a first terminal plate, and a second terminal plate. ... Qorvo Us Inc

05/24/18 / #20180145678

Stacked field-effect transistor switch

A stacked field-effect transistor (fet) switch is disclosed. The stacked fet switch has a first fet device stack that is operable in an on-state and in an off-state and is made up of a first plurality of fet devices coupled in series between a first port and a second port, wherein the first fet device stack has a conductance that decreases with increasing voltage between the first port and the second port. ... Qorvo Us Inc

05/24/18 / #20180145068

Ac-coupled switch and metal capacitor structure for nanometer or low metal layer count processes

Alternating current (ac)-coupled switch and metal capacitor structures for nanometer or low metal layer count processes are provided. According to one aspect of the present disclosure, a switch and capacitor structure comprises a substrate comprising a device region with a field effect transistor (fet) formed therein, the fet having a source terminal comprising a structure in a first metal layer and a drain terminal comprising a structure in the first metal layer, and a capacitor comprising a first plate and a second plate, the first plate comprising a structure in a second metal layer, the second metal layer being above the first metal layer, the structure of the first plate being electrically connected to the structure of the drain terminal, and the second plate comprising a structure in the second metal layer, the structure of the first plate spaced from the structure of the second plate.. ... Qorvo Us Inc

05/17/18 / #20180138863

Multi-mode radio frequency (rf) power amplifier circuit

A multi-mode radio frequency (rf) power amplifier circuit is disclosed. The multi-mode rf power amplifier circuit can operate in a low-resource block (rb) mode and a high-rb mode. ... Qorvo Us Inc

05/17/18 / #20180138082

Air-cavity module with enhanced device isolation

The present disclosure relates to an air-cavity module having a thinned semiconductor die and a mold compound. The thinned semiconductor die includes a back-end-of-line (beol) layer, an epitaxial layer over the beol layer, and a buried oxide (box) layer with discrete holes over the epitaxial layer. ... Qorvo Us Inc

05/10/18 / #20180131334

Low leakage protection circuit for rf power amplifier

The present disclosure relates to a radio frequency (rf) communications system including an rf power amplifier (pa), a bias circuit, and a protection circuit. The rf pa has an amplifier control terminal and a power supply terminal, the bias circuit is coupled to the amplifier control terminal, and the protection circuit is coupled between the bias circuit and the power supply terminal. ... Qorvo Us Inc

05/10/18 / #20180130722

Semiconductor package with grounded fence to inhibit dendrites of die-attach materials

The present disclosure relates to a semiconductor package with at least one grounded fence to inhibit dendrites of die-attach materials. The semiconductor package includes a carrier, a die-attach material, and a wire-bonded die. ... Qorvo Us Inc

05/03/18 / #20180123533

Electronically reconfigurable matching network

An electronically reconfigurable matching network having a plurality of electronically reconfigurable components is disclosed. Each of the plurality of electronically reconfigurable elements includes a plurality of selectable impedance elements coupled together. ... Qorvo Us Inc

05/03/18 / #20180122735

Module assembly

A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. ... Qorvo Us Inc

05/03/18 / #20180122716

Environmental protection for wafer level and package level applications

A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.. ... Qorvo Us Inc

04/19/18 / #20180109242

Surface acoustic wave (saw) device with antireflective structure

A device including a piezoelectric substrate, an interdigital transducer (idt), and an antireflective structure is disclosed herein. The piezoelectric substrate has a front-side surface and a smoothed back-side surface. ... Qorvo Us Inc

04/19/18 / #20180109241

Guided acoustic wave device

A guided acoustic wave device includes a substrate, a lithium tantalate layer on the substrate, and a transducer on the lithium tantalate film. The lithium tantalate has a crystalline orientation defined by (yxl)Θ°, where Θ is between 10° and 37°. ... Qorvo Us Inc

04/19/18 / #20180109237

Wafer-level-packaged baw devices with surface mount connection structures

The present disclosure relates to a wafer-level-packaged (wlp) bulk acoustic wave (baw) device that includes a baw resonator, a wlp enclosure, and a surface mount connection structure. The baw resonator includes a piezoelectric layer with an opening and a bottom electrode lead underneath the piezoelectric layer, such that a portion of the bottom electrode lead is exposed through the opening of the piezoelectric layer. ... Qorvo Us Inc

04/12/18 / #20180102760

Slanted apodization for acoustic wave devices

A device includes a die and an interdigital transducer on the die. The interdigital transducer includes a first bus bar, a second bus bar, and a number of electrode fingers. ... Qorvo Us Inc

04/12/18 / #20180100833

Sensors, methods of making and devices

Disclosed sensors can include at least one resonator (in some embodiments, at least two resonators) and various other structures that may be formed in association with the resonators. The at least one resonator in embodiments can include a bottom electrode, a piezoelectric layer, and a top electrode, wherein the piezoelectric layer is positioned between the bottom electrode and the top electrode.. ... Qorvo Us Inc

04/05/18 / #20180097507

High-voltage converter based tuning of acoustic filters

Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. ... Qorvo Us Inc

03/29/18 / #20180091099

Reconfigurable low-noise amplifier (lna)

A reconfigurable low-noise amplifier (lna) is disclosed. The reconfigurable lna includes amplifier circuitry having a gate terminal coupled to an input terminal, a source terminal coupled to a fixed voltage node, and a drain terminal coupled to an output terminal. ... Qorvo Us Inc

03/22/18 / #20180083575

Amplifier with improved linearity

An amplifier having improved linearity is disclosed. The amplifier includes a main transistor having a first current input terminal, a first current output terminal, and a first control terminal coupled to an rf input terminal that receives a signal voltage. ... Qorvo Us Inc

03/22/18 / #20180082778

Broadside-coupled transformer

A broadside-coupled transformer is disclosed. The broadside-coupled transformer has a dielectric substrate with a first planar conductor disposed on the dielectric substrate. ... Qorvo Us Inc

03/15/18 / #20180076810

Dual-level power-on reset (por) circuit

An integrated circuit (ic) including a first power-on reset (por) circuit and a second por circuit is disclosed. The first por circuit is configured to enable the second por circuit when a supply voltage initially exceeds a first threshold voltage as the supply voltage is being applied to the ic. ... Qorvo Us Inc

03/15/18 / #20180076794

Acoustic filter using acoustic coupling

A filter circuit includes a first input node and a second input node for receiving an input signal, and a first output node and a second output node for providing an output signal. A first series acoustic resonator is coupled in series between the first input node and the first output node. ... Qorvo Us Inc

03/15/18 / #20180076793

Acoustic filter employing inductive coupling

Disclosed in one embodiment is filter circuitry having first and second paths extending between first and second nodes. The first path has a first inductor and a second inductor coupled in series between the first node and the second node, wherein the first inductor and the second inductor are positively coupled with one another, and a first common node is provided between the first inductor and the second inductor. ... Qorvo Us Inc

03/15/18 / #20180076174

Semiconductor package with reduced parasitic coupling effects and process for making the same

The present disclosure relates to a semiconductor package with reduced parasitic coupling effects, and a process for making the same. The disclosed semiconductor package includes a thinned flip-chip die and a first mold compound component with a dielectric constant no more than 7. ... Qorvo Us Inc

03/08/18 / #20180069510

Frequency selective low noise amplifier circuit

Embodiments of the disclosure relate to a frequency selective low noise amplifier (lna) circuit, which includes a transconductive lna(s). In one aspect, filter circuitry is provided in a degeneration path of a transconductive lna(s) to pass in-band frequencies and reject out-of-band frequencies by generating low impedance and high impedance at the in-band frequencies and the out-of-band frequencies, respectively. ... Qorvo Us Inc

03/01/18 / #20180063940

Air-cavity package with two heat dissipation interfaces

The present disclosure relates to an air-cavity package, which includes a bottom substrate with a first heat dissipation interface, a top substrate with a second heat dissipation interface, a perimeter wall, a bottom electronic component, and a top electronic component. The perimeter wall extends between a periphery of the top substrate and a periphery of the bottom substrate to form a cavity. ... Qorvo Us Inc

03/01/18 / #20180061744

High-power acoustic device with improved performance

The present disclosure relates to a high-power acoustic device with improved performance. The disclosed acoustic device includes a substrate, a die-attach material, and an acoustic die. ... Qorvo Us Inc

03/01/18 / #20180061730

Air cavity package

The present disclosure relates to an air-cavity package, which includes a substrate, a base, and a semiconductor die. The substrate includes a substrate body, thermal vias extending through the substrate body, and a metal trace on a bottom side of the substrate body and separate from the thermal vias. ... Qorvo Us Inc

03/01/18 / #20180061726

Air-cavity package with dual signal-transition sides

The present disclosure relates to an air-cavity package, which includes a bottom substrate, a top substrate, a perimeter wall, a bottom electronic component, and a top electronic component. The bottom substrate includes a bottom signal via extending through the bottom substrate and the top substrate includes a top signal via extending through the top substrate. ... Qorvo Us Inc

03/01/18 / #20180061725

Air-cavity package with enhanced package integration level and thermal performance

The present disclosure relates to an air-cavity package, which includes a bottom substrate, a top substrate, a perimeter wall, a bottom electronic component, a top electronic component, and an external electronic component. The perimeter wall extends from a periphery of a lower side of the top substrate to a periphery of an upper side of the bottom substrate to form a cavity. ... Qorvo Us Inc

02/22/18 / #20180054298

Phase locked loop (pll)-less millimeter wave power head

Embodiments of the disclosure relate to a phase locked loop (pll)-less millimeter wave (mmwave) power head. The mmwave power head receives a multiplexed signal including a pilot signal at a base frequency and a communication signal at the if frequency. ... Qorvo Us Inc

02/22/18 / #20180054179

Guided acoustic wave device

An acoustic wave device includes a piezoelectric layer, an interdigital transducer, and a slow wave propagation overlay over a portion of the interdigital transducer. By providing electrode fingers of the interdigital transducer such that a portion of the width thereof is dependent on an electrode period, a desirable wave mode may be maintained in the acoustic wave device. ... Qorvo Us Inc

02/22/18 / #20180054167

High loop-gain phemt regulator for linear rf power amplifier

Voltage regulator circuitry includes a first gain stage, a second gain stage, and a feedback stage. Feedback is provided between the feedback stage, the second gain stage, and the first gain stage in order to tightly regulate an output voltage of the voltage regulator circuitry such that the output voltage is independent of process variations present in the devices therein. ... Qorvo Us Inc

02/22/18 / #20180053704

Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer

A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. ... Qorvo Us Inc

02/15/18 / #20180048280

Acoustic resonator device with controlled placement of functionalization material

A micro-electrical-mechanical system (mems) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. ... Qorvo Us Inc

02/15/18 / #20180048276

Multi-mode envelope tracking amplifier circuit

A multi-mode envelope tracking (et) amplifier circuit is provided. The multi-mode et amplifier circuit can operate in low-resource block (rb) mode and high-rb mode. ... Qorvo Us Inc

02/15/18 / #20180047653

Wafer-level package with enhanced performance

The present disclosure relates to a packaging process to enhance thermal and electrical performance of a wafer-level package. The wafer-level package with enhanced performance includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. ... Qorvo Us Inc

02/15/18 / #20180044177

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die includes a first device layer formed from glass materials. ... Qorvo Us Inc

02/15/18 / #20180044169

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die, a multilayer redistribution structure, a first mold compound, and a second mold compound. The first thinned die resides over a top surface of the multilayer redistribution structure. ... Qorvo Us Inc

02/08/18 / #20180041193

Acoustic filtering circuitry including capacitor

Acoustic filtering circuitry includes a piezoelectric layer, a dielectric layer, a plurality of acoustic resonators, and a capacitor. The dielectric layer is over a surface of the piezoelectric layer. ... Qorvo Us Inc

02/01/18 / #20180034438

Acoustic resonator devices and methods with noble metal layer for functionalization

A micro-electrical-mechanical system (mems) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding) material. The interface layer and/or an overlying blocking layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (sam), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. ... Qorvo Us Inc

01/18/18 / #20180019712

Linearized distributed amplifier architecture

A distributed amplifier (da) is disclosed. The da includes a first plurality of inductive elements coupled in series forming a first plurality of connection nodes. ... Qorvo Us Inc

01/18/18 / #20180019185

Thermally enhanced semiconductor package having field effect transistors with back-gate feature

The present disclosure relates to a thermally enhanced semiconductor package having field effect transistors (fets) with a back-gate feature. The thermally enhanced semiconductor package includes a non-silicon thermal conductive component, a silicon layer with a thickness between 100 Å and 10 μm over the thermal conductive component, a buried oxide (box) layer over the silicon layer, an epitaxial layer over the box layer and having a source, a drain, and a channel between the source and the drain, a gate dielectric aligned over the channel, and a front-gate structure over the gate dielectric. ... Qorvo Us Inc

01/18/18 / #20180019184

Thermally enhanced semiconductor package having field effect transistors with back-gate feature

The present disclosure relates to a thermally enhanced semiconductor package having field effect transistors (fets) with a back-gate feature. The thermally enhanced semiconductor package includes a first buried oxide (box) layer, a first epitaxial layer over the first box layer, a second box layer over the first epitaxial layer, a second epitaxial layer over the second box layer and having a source, a drain, and a channel between the source and the drain, a gate dielectric aligned over the channel, and a front-gate structure over the gate dielectric. ... Qorvo Us Inc

01/18/18 / #20180019045

Advanced 3d inductor structures with confined magnetic field

Embodiments of an apparatus that includes a substrate and an inductor residing in the substrate are disclosed. In one embodiment, the inductor is formed as a conductive path that extends from a first terminal to a second terminal. ... Qorvo Us Inc

01/11/18 / #20180013465

Multi-mode radio frequency circuitry

Circuitry includes a first rf power amplifier, a second rf power amplifier, a third rf power amplifier, a first bias signal generator, and a second bias signal generator. The first rf power amplifier and the second rf power amplifier are each configured to amplify rf signals for transmission in a first carrier network. ... Qorvo Us Inc

01/11/18 / #20180013402

Device having a titanium-alloyed surface

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. ... Qorvo Us Inc

01/11/18 / #20180013392

Protection circuit for an rf power amplifier

An rf pa and an rf pa protection circuit are disclosed according to one embodiment of the present disclosure. The rf pa includes an rf pa bias circuit and an rf pa transistor element. ... Qorvo Us Inc

01/11/18 / #20180012986

Semiconductor device with vertically integrated phemts

The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (phemts). The disclosed semiconductor device includes a substrate, a lower phemt structure with a lower phemt, an isolation layer, and an upper phemt structure with an upper phemt. ... Qorvo Us Inc

01/04/18 / #20180007645

Outphasing power management circuit for radio frequency (rf) beamforming

An outphasing power management circuit for radio frequency (rf) beamforming is disclosed. The outphasing power management circuit includes a first outphasing amplifier branch consisting of a plurality of first power amplifiers and a second outphasing amplifier branch consisting of a plurality of second power amplifiers. ... Qorvo Us Inc

12/21/17 / #20170366168

Monolithic attenuator, limiter, and linearizer circuits using non-linear resistors

Monolithic attenuator, limiter, and linearizer circuitry to be integrated with other circuitry on a chip are provided. According to one aspect, a monolithic attenuator and limiter circuit comprises an input terminal, an output terminal, a first resistor having a first terminal coupled to the input terminal and a second terminal coupled to the output terminal, and a second resistor having a first terminal coupled to the first or second terminal of the first resistor and a second terminal coupled to ground. ... Qorvo Us Inc

12/21/17 / #20170365700

High electron mobility transistor (hemt) device and method of making the same

A high electron mobility transistor (hemt) device with epitaxial layers that include a gallium nitride (gan) layer co-doped with silicon (si) and germanium ge and a method of making the same is disclosed. The hemt device includes a substrate with epitaxial layers over the substrate. ... Qorvo Us Inc

12/14/17 / #20170358524

Ring-frame power package

The present disclosure relates to a ring-frame power package that includes a thermal carrier, a spacer ring residing on the thermal carrier, and a ring structure residing on the spacer ring. The ring structure includes a ring body and a number of interconnect tabs that protrude from an outer periphery of the ring body. ... Qorvo Us Inc

12/14/17 / #20170358515

Substrate with integrated heat spreader

The present disclosure relates to a substrate with an integrated heat spreader. The disclosed substrate includes a substrate core, at least one connecting structure, and a heat spreader. ... Qorvo Us Inc

12/14/17 / #20170358511

Thermally enhanced semiconductor package with thermal additive and process for making the same

The present disclosure relates to a thermally enhanced semiconductor package, which includes a module substrate, a thinned flip chip die over the substrate, a first mold compound component, and a thermally enhanced mold compound component. The first mold compound component resides over the module substrate, surrounds the thinned flip chip die, and extends above an upper surface of the thinned flip chip die to form a cavity over the upper surface of the thinned flip chip die. ... Qorvo Us Inc

11/30/17 / #20170346448

Variable gain low noise amplifier

Lna circuitry includes an input node, and output node, a primary amplifier stage, a first ancillary amplifier stage, and an input gain selection switch. The primary amplifier stage is configured to provide a first gain response between a primary amplifier stage input node and a primary amplifier stage output node, wherein the primary amplifier stage input node is coupled to the input node and the primary amplifier stage output node is coupled to the output node. ... Qorvo Us Inc

11/23/17 / #20170338299

Adaptive capacitors with reduced variation in value and in-line methods for making same

A method of making a capacitor with reduced variance comprises providing a bottom plate in a first metal layer, a first dielectric material over the bottom plate, and a middle plate in a second metal layer to form a first capacitor. The method also comprises measuring the capacitance of the first capacitor, and determining whether to couple none, one, or both of a second capacitor and a third capacitor in parallel with the first capacitor. ... Qorvo Us Inc

11/23/17 / #20170334710

Wafer-level package with enhanced performance

The present disclosure relates to a wafer-level package that includes a first thinned die having a first device layer, a multilayer redistribution structure, a first mold compound, and a second mold compound. The multilayer redistribution structure includes redistribution interconnects that connect the first device layer to package contacts on a bottom surface of the multilayer redistribution structure. ... Qorvo Us Inc

11/16/17 / #20170331454

Circuit for suppressing signals adjacent to a passband

A circuit having a power amplifier port, an antenna port, and a ladder network coupled between the power amplifier and antenna ports is disclosed. The ladder network includes a proximal series acoustic resonator coupled to the power amplifier port, a distal series acoustic resonator coupled to the antenna port, and at least one series acoustic resonator coupled between the proximal series acoustic resonator and the distal series acoustic resonator. ... Qorvo Us Inc

11/16/17 / #20170331433

Envelope tracking power management circuit

An envelope tracking power management circuit is disclosed. An envelope tracking power management circuit includes a first envelope tracking amplifier(s) and a second envelope tracking amplifier(s), each configured to amplify a respective radio frequency (rf) signal(s) based on a respective supply voltage. ... Qorvo Us Inc

11/09/17 / #20170324159

Compensation circuit to mitigate antenna-to-antenna coupling

A compensation circuit reduces the negative effects of antenna-to-antenna coupling between proximately located antennas. The compensation circuit is coupled between first and second antenna ports. ... Qorvo Us Inc

11/09/17 / #20170323860

Microelectronics package with inductive element and magnetically enhanced mold compound component

The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. ... Qorvo Us Inc

11/09/17 / #20170323804

Microelectronics package with inductive element and magnetically enhanced mold compound component

The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. ... Qorvo Us Inc

10/26/17 / #20170309709

Substrate structure with embedded layer for post-processing silicon handle elimination

The present disclosure relates to a substrate structure with a buried dielectric layer for post-processing silicon handle elimination. The substrate structure includes a silicon handle layer, a first silicon oxide layer over the silicon handle layer, a buried dielectric layer over the first silicon oxide layer, where the buried dielectric layer is not formed from silicon oxide, a second silicon oxide layer over the buried dielectric layer, and a silicon epitaxy layer over the second silicon oxide layer. ... Qorvo Us Inc

10/12/17 / #20170294892

Fluidic sensor device having uv-blocking cover

A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. ... Qorvo Us Inc

10/12/17 / #20170294529

High electron mobility transistor (hemt) device

A high electron mobility transistor (hemt) device with epitaxial layers that include a gallium nitride (gan) layer and an aluminum (al) based layer having an interface with the gan layer is disclosed. The al based layer includes al and an alloying element that is selected from group iiib transition metals of the periodic table of elements. ... Qorvo Us Inc

10/05/17 / #20170288765

Multiple-input multiple-output (mimo) antenna swapping circuit

Aspects disclosed herein include a multiple-input multiple-output (mimo) antenna swapping circuit. The mimo antenna swapping circuit includes primary switching circuitry configured to be coupled to a first antenna and a third antenna, and secondary switching circuitry configured to be coupled to a second antenna and a fourth antenna. ... Qorvo Us Inc

10/05/17 / #20170288659

Apparatus with main transistor-based switch and on-state linearization network

An apparatus including a main transistor-based switch having a first end node and a second end node and an on-state linearization network that is coupled between the first end node and the second end node of the main transistor-based switch is disclosed. The on-state linearization network is configured to receive a monitored signal that corresponds to a signal across the first end node and the second end node and cancel at least a portion of non-linear distortion generated by the main transistor-based switch when the main transistor-based switch is in an on-state based on the monitored signal. ... Qorvo Us Inc

10/05/17 / #20170288644

Baw devices having top electrode leads with reduced reflectance

The present disclosure relates to a wafer-level-packaged bulk acoustic wave (baw) device, which includes a bottom electrode, a top electrode, a top electrode lead, a piezoelectric layer sandwiched between the bottom and the top electrodes, an enclosure, and an anti-reflective layer (arl). Herein, an active region for a resonator is formed where the bottom electrode and the top electrode overlap. ... Qorvo Us Inc

10/05/17 / #20170288629

Solidly mounted layer thin film device with grounding layer

An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. ... Qorvo Us Inc

10/05/17 / #20170288612

Efficient wide bandwidth envelope tracking power supply

An envelope tracking power supply, which includes a parallel amplifier, switching circuitry, and a parallel switching supply, is disclosed. The envelope tracking power supply provides an envelope power supply signal to a load. ... Qorvo Us Inc

10/05/17 / #20170287807

Electronics package with improved thermal performance

An electronics package includes a thermal lid over a flip chip component such that the thermal lid is in contact with a surface of a flip chip component and one or more thermal vias in a substrate on which the flip chip component is mounted. The thermal lid dissipates heat from the flip chip component by way of the thermal vias to improve the thermal performance of the electronics package.. ... Qorvo Us Inc

10/05/17 / #20170286340

Slave device identification on a single wire communications bus

A system includes a single wire communications bus, a first slave device, and a second slave device. The first slave device and the second slave device each include a plurality of pins. ... Qorvo Us Inc

09/28/17 / #20170279439

Rf phase offset detection circuit

An rf phase offset detection system, which includes a first rf phase detector and a second rf phase detector, and measures a first phase offset between a first rf signal and a second rf signal, is disclosed. Each of the first rf signal and the second rf signal has a common rf frequency. ... Qorvo Us Inc

09/28/17 / #20170279416

Dual output rf lna

Rf receive circuitry, which includes a first output impedance matching circuit coupled to a first alpha output of a first alpha lna, a second output impedance matching circuit coupled to a first beta output of a first beta lna, and a first dual output rf lna, is disclosed. The first dual output rf lna includes the first alpha lna, the first beta lna, and a first gate bias control circuit, which is coupled between a first alpha input of the first alpha lna and ground; is further coupled between a first beta input of the first beta lna and the ground; is configured to select one of enabled and disabled of the first alpha lna using an alpha bias signal via the first alpha input; and is further configured to select one of enabled and disabled of the first beta lna using a beta bias signal via the first beta input.. ... Qorvo Us Inc

09/28/17 / #20170278958

Double heterojunction field effect transistor with polarization compensated layer

A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. ... Qorvo Us Inc

09/28/17 / #20170278840

Electrostatic discharge (esd) protection in an electronic switching circuit

Aspects disclosed herein include electrostatic discharge (esd) protection in an electronic switching circuit. An electronic switching circuit includes switching circuitry configured to provide interconnectivity between a common port in at least one common branch and an input/output (i/o) port in at least one i/o branch. ... Qorvo Us Inc

09/28/17 / #20170278767

Hermetic package with improved rf stability and performance

The present disclosure relates to a hermetic package with improved rf stability and performance. The package includes a carrier, a bottom dielectric ring over the carrier, a bottom metal layer over the bottom dielectric ring, a top dielectric ring over the bottom metal layer, a top metal layer over the top dielectric ring, an exterior plated layer, and multiple top vias. ... Qorvo Us Inc

09/28/17 / #20170278623

Coupled inductor structures

A coupled inductor structure includes a first three-dimensional inductor structure and a second three-dimensional folded inductor structure. At least a portion of the first three-dimensional folded inductor structure is located within a volume bounded by the second three-dimensional folded inductor structure. ... Qorvo Us Inc

09/28/17 / #20170277651

Addressing of slave devices on a single wire communications bus through register map address selection

A communications system includes a single wire communications bus and a plurality of slave devices, each of the slave devices associated with a common slave identifier. The single wire communications bus is configured to receive a message comprising data, a slave identifier, and a register map address. ... Qorvo Us Inc

09/28/17 / #20170276670

Mass detection through redox coupling

Redox of an analyte is coupled with redox of a precipitation precursor to generate a precipitating molecule that precipitates on the surface of a thin film bulk acoustic resonance (tfbar) to allow mass detection of the precipitation molecule as a surrogate for the analyte. This disclosure describes, among other things, detection of an analyte using a tfbar operating at a high frequency without direct binding of the analyte on a surface of the tbar. ... Qorvo Us Inc

09/21/17 / #20170272066

Radio frequency (rf) switch with on and off switching acceleration

A radio frequency (rf) switch having two or more stages coupled in series is disclosed. A first field-effect transistor (fet) with a first control terminal is coupled across a gate resistor to shunt the gate resistor when the first fet is on. ... Qorvo Us Inc

09/21/17 / #20170271200

Silicon-on-plastic semiconductor device with interfacial adhesion layer

A semiconductor device and methods for manufacturing the same are disclosed. The semiconductor device includes a polymer substrate and an interfacial layer over the polymer substrate. ... Qorvo Us Inc

09/14/17 / #20170264267

Bulk acoustic wave resonator with electrically isolated border ring

A bulk acoustic wave (baw) resonator with an electrically isolated border (bo) ring is provided. One baw resonator includes a bottom electrode and a piezoelectric layer over the bottom electrode and having a top surface with a first portion and second portion about the first portion. ... Qorvo Us Inc

09/14/17 / #20170264249

Low noise amplifier (lna) system

A low noise amplifier (lna) system having a constant noise factor (const-nf) mode and a constant third-order intercept (const-ip3) mode is disclosed. The lna system includes an lna core and a trade-off bias network coupled to the lna core to selectably bias the lna core to realize the const-nf mode and the const-ip3 mode. ... Qorvo Us Inc

09/14/17 / #20170263844

Bulk acoustic wave resonator with a border ring and an inner ring

Bulk acoustic wave (baw) resonators with a border (bo) ring and an inner ring are provided. One baw resonator includes a bottom electrode, a piezoelectric layer over the bottom electrode, and a top electrode over the piezoelectric layer in which an active region is formed where the top electrode and the bottom electrode overlap. ... Qorvo Us Inc

09/14/17 / #20170262008

Bias circuitry

Circuitry having a reference current generator and a reference current governor is disclosed. The reference current governor includes field effect transistors (fets) that are sized such that a governor current governs a reference current flowing through the first fet to maintain the reference current within a desired reference current range.. ... Qorvo Us Inc

09/14/17 / #20170261503

Baw sensor fluidic device with increased dynamic measurement range

A fluidic device includes a base structure including at least one bulk acoustic wave (baw) resonator structure having a fluidic passage containing at least one functionalized active region overlaid with functionalization material suitable to bind an analyte. One or more of a wall structure, a cover structure, or a portion of the base structure defining the fluidic passage includes additional functionalization material to form at least one absorber configured to bind at least one analyte. ... Qorvo Us Inc

09/07/17 / #20170257078

Baw/saw-assisted lc filters and multiplexers

Embodiments of radio frequency (rf) filtering circuitry are disclosed. In one embodiment, the rf filtering circuitry includes a common port, a second port, a third port, a first rf filter path, and a second rf filter path. ... Qorvo Us Inc

09/07/17 / #20170256467

Removable sacrificial connections for semiconductor devices

Methods of fabricating semiconductor devices and radio frequency (rf) components are provided. The method includes providing a circuit layout on a semiconductor layer and providing one or more sacrificial connections to connect bump pads in the circuit layout. ... Qorvo Us Inc

09/07/17 / #20170255579

One wire bus to rffe translation system

This disclosure relates generally to bus interface systems for mobile user devices. In one embodiment, the bus interface system includes a first bus interface subsystem that operates in accordance with a one wire bus protocol, a second bus interface subsystem that operates in accordance with a mobile industry processor interface (mipi) radio frequency front end (rffe) bus protocol, and a translation bus controller that translates commands between the first bus interface subsystem and the second bus interface system. ... Qorvo Us Inc

09/07/17 / #20170255578

One wire bus to rffe translation system

This disclosure relates generally to bus interface systems for mobile user devices. In one embodiment, the bus interface system includes a first bus interface subsystem that operates in accordance with a one wire bus protocol, a second bus interface subsystem that operates in accordance with a mobile industry processor interface (mipi) radio frequency front end (rffe) bus protocol, and a translation bus controller that translates commands between the first bus interface subsystem and the second bus interface system. ... Qorvo Us Inc

09/07/17 / #20170255250

Switching power supply for subus slaves

This disclosure relates generally to digital bus interfaces. In one embodiment, a bus interface system includes a master bus controller and a slave bus controller coupled along a bus line. ... Qorvo Us Inc

08/31/17 / #20170251474

Radio frequency front end circuitry for mimo and carrier aggregation

Rf front end circuitry includes a first antenna node, a second antenna node, a diplexer, a first band filter, a second band filter, and switching circuitry. The diplexer may be used to separate signals for carrier aggregation, providing signals within a first rf frequency band to the first band filter and signals within a second rf frequency band to the second band filter. ... Qorvo Us Inc

08/31/17 / #20170250653

Dual-mode envelope tracking power management circuit

A dual-mode envelope tracking (et) power management circuit is provided. An et amplifier(s) in the dual-mode et power management circuit is capable of supporting normal-power user equipment (npue) mode and high-power user equipment (hpue) mode. ... Qorvo Us Inc

08/24/17 / #20170244402

Overvoltage detector for an rf switch

An overvoltage detector for an rf switch is disclosed. The overvoltage detector is made up of circuitry having a detector output that couples to a controller, a body voltage input that couples to a charge pump, and a body voltage output that couples to a body terminal of the rf switch. ... Qorvo Us Inc

08/24/17 / #20170244401

Stacked rf switch with fast switching speed

A first stacked rf switch, which operates in one of an on mode and an off mode, and includes a group of rf switching circuits coupled in series between a first rf switch connection node and a second rf switch connection node, is disclosed. The group of rf switching circuits includes a first rf switching circuit, which includes a first switching transistor element coupled between a first source connection node and a first drain connection node, a first source/drain (s/d) bias resistive element coupled across the first switching transistor element, and a first s/d shorting circuit coupled across the first s/d bias resistive element. ... Qorvo Us Inc

08/24/17 / #20170244382

High power and low loss acoustic filter

The present disclosure relates to a high power and low loss acoustic filter that includes a first node, a second node, a first power bypass path, and a first acoustic resonator (ar) path. The first power bypass path extends between the first node and the second node. ... Qorvo Us Inc

08/24/17 / #20170244380

Bulk acoustic wave device with wafer level packaging

A bulk acoustic wave (baw) device includes a substrate, a reflector on the substrate, a piezoelectric layer on the reflector and including a first opening through which a portion of the reflector is exposed, an electrode layer on the portion of the reflector exposed through the first opening, a passivation layer on the piezoelectric layer and a portion of the electrode layer and including a second opening through which a portion of the electrode layer is exposed, an under-bump metallization layer on the portion of the electrode layer exposed through the second opening and extending over the second opening and the first opening on the passivation layer, and a copper pillar structure on the under-bump metallization layer such that the entirety of the under-bump metallization layer is covered by the copper pillar structure.. . ... Qorvo Us Inc

08/17/17 / #20170237452

Radio frequency filtering circuitry for carrier aggregation

Radio frequency (rf) filtering circuitry includes a number of filtering elements and switching circuitry configured to rearrange the filtering elements between a common node, a first input/output node, a second input/output node, and a third input/output node such that the rf filtering circuitry is capable of supporting carrier aggregation between rf signals within a first rf frequency band and rf signals within a second rf frequency band, as well as between rf signals within a first portion of the second rf frequency band and a second portion of the second rf frequency band.. . ... Qorvo Us Inc

08/17/17 / #20170237451

Radio frequency front end circuitry with reduced insertion loss

Circuitry includes a primary antenna node, a secondary antenna node, a first set of input/output nodes, a second set of input/output nodes, a first diplexer, a second diplexer, and switching circuitry. The switching circuitry is arranged such that any one of the first set of input/output nodes and the second set of input/output nodes can be connected to the primary antenna node or the secondary antenna node, either through the first diplexer, the second diplexer, or directly by bypassing the first diplexer and the second diplexer while providing minimal insertion loss. ... Qorvo Us Inc

08/17/17 / #20170237404

Weakly coupled tunable rf receiver architecture

Rf communications circuitry, which includes a first tunable rf filter and a first rf low noise amplifier (lna) is disclosed. The first tunable rf filter includes a pair of weakly coupled resonators, and receives and filters a first upstream rf signal to provide a first filtered rf signal. ... Qorvo Us Inc

08/17/17 / #20170236925

Semiconductor device with multiple hbts having different emitter ballast resistances

The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (hbts) that have different emitter ballast resistances. The disclosed semiconductor device includes a substrate, a first hbt and a second hbt formed over the substrate. ... Qorvo Us Inc

08/17/17 / #20170236808

Semiconductor package with lid having lid conductive structure

The present disclosure relates to a semiconductor package with a lid that includes a lid conductive structure. The semiconductor package includes a substrate with a top surface, a lid over the top surface of the substrate, and at least one substrate-mounted component mounted on the top surface of the substrate. ... Qorvo Us Inc

08/10/17 / #20170230015

Auto-bias circuit for stacked fet power amplifier

The present disclosure relates to circuitry including an auto-bias circuit for a stacked fet power amplifier. The auto-bias circuit includes a dividing circuit and an averaging circuit. ... Qorvo Us Inc

08/10/17 / #20170230012

Radio frequency (rf) amplifiers with voltage limiting using non-linear feedback

Radio frequency (rf) amplifiers with voltage limiting using non-linear feedback are presented herein. According to one aspect, an rf amplifier comprises an amplifier circuit having an input terminal and an output terminal and a non-linear feedback circuit having an input terminal and an output terminal. ... Qorvo Us Inc

08/10/17 / #20170229368

Top-side cooling of rf products in air cavity composite packages

Top-side cooling of radio frequency (rf) products in air cavity packages is provided. According to one aspect, an air cavity package comprises a substrate, a rf component mounted to the substrate, and a lid structure comprising a first material and being mounted to the substrate that covers the rf component such that a cavity is formed within the lid structure and about the rf component. ... Qorvo Us Inc

08/10/17 / #20170227497

Baw sensing and filtration device and related methods

A fluidic device incorporating at least one baw resonator structure (e.g., a biosensing device) and a fluidic passage includes one or more features that provide filtration capability. Certain embodiments include at least one group of pillars extending into the fluidic passage which are arranged between an active region of the at least one baw resonator structure and at least one fluidic port. ... Qorvo Us Inc

08/03/17 / #20170222672

Ul ca tx-tx tunable cross-isolation method

Rf filtering circuitry includes a first transmit signal node, a second transmit signal node, a common node, first transmit signal filtering circuitry, second transmit signal filtering circuitry, and transmit signal cancellation circuitry. The first transmit signal filtering circuitry is coupled between the first transmit signal node and the common node and is configured to pass rf transmit signals within a first transmit signal frequency band while attenuating signals outside the first transmit signal frequency band. ... Qorvo Us Inc

08/03/17 / #20170220503

Front end serial bus automatic bus park tri-state activation

The present disclosure relates to embodiments of bus interface systems capable of dealing with the tougher half clock cycle of sread commands in the new mobile industry processor interface (mipi) radio frequency front end (rffe) version 2.0 standard. With regard to the slave bus controllers of the bus interface systems disclosed herein, the slave bus controller is configured to operate the slave bus driver such that the data bus line is driven towards a minimum voltage level in response to a final clock edge of the clock signal during the bus park subframe. ... Qorvo Us Inc

07/20/17 / #20170207813

Single rf pa chain for ca fdd-tdd and tdd tx

Rf circuitry, which includes rf rx circuitry, an rf pa, rf tdd switching circuitry, and rf tx switching circuitry, is disclosed. The rf tx switching circuitry is coupled between the rf pa and the rf tdd switching circuitry. ... Qorvo Us Inc

07/20/17 / #20170207766

Cap structure for wafer level package

A wafer level package (wlp) device includes a wafer level core and a cap structure. At least one component is formed in or on the wafer level core, and the cap structure resides on the top surface of the wafer level core and forms a cavity over the component. ... Qorvo Us Inc

07/20/17 / #20170207705

Smooth transitioning buck-boost dc-dc converter

A buck-boost dc-dc converter, which includes converter control circuitry, converter switching circuitry, and a first inductive element, is disclosed. The converter control circuitry provides a buck mode timing signal and a boost mode timing signal. ... Qorvo Us Inc

07/20/17 / #20170207350

Microelectronics package with integrated sensors

The present disclosure relates to a microelectronics package with optical sensors and/or thermal sensors. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, and a first mold compound component. ... Qorvo Us Inc

07/13/17 / #20170201290

Radio frequency circuitry for carrier aggregation

Rf circuitry includes a filter, a termination impedance, and band switching circuitry. The filter is coupled between a first input/output node and a common node and configured to pass rf signals within a transmit portion of a first operating band from the first input/output node to the common node while attenuating signals outside of the transmit portion of the first operating band. ... Qorvo Us Inc

07/13/17 / #20170201248

Rf switch having reduced signal distortion

An rf switch having an m number of fets that are stacked in series and coupled between a first end node and a second end node wherein each of the m number of fets has a gate is disclosed. A resistive network is coupled between a common mode (cm) node and the gate for each of the m number of fets such that a resistance between the cm node and each gate of the m number of fets is substantially equal. ... Qorvo Us Inc

07/13/17 / #20170201245

Rf branch with accelerated turn-on and high q value

Improved radio frequency (rf) switches are provided herein. According to one aspect, an rf switch comprises one or more stages. ... Qorvo Us Inc

07/13/17 / #20170201244

Rf branch with improved power handling

Improved radio frequency (rf) switches are provided herein. According to one aspect, an rf switch comprises one or more stages. ... Qorvo Us Inc








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