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Renesas Electronics Corporation patents


Recent patent applications related to Renesas Electronics Corporation. Renesas Electronics Corporation is listed as an Agent/Assignee. Note: Renesas Electronics Corporation may have other listings under different names/spellings. We're not affiliated with Renesas Electronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Renesas Electronics Corporation-related inventors


 new patent  Semiconductor device and a manufacturing method thereof

In a semiconductor device including a split gate type monos memory, and a trench capacitor element having an upper electrode partially embedded in trenches formed in the main surface of a semiconductor substrate, merged therein, the flatness of the top surface of the upper electrode embedded in the trench is improved. The polysilicon film formed over the semiconductor substrate to form a control gate electrode forming a memory cell of the monos memory is embedded in the trenches formed in the main surface of the semiconductor substrate in a capacitor element formation region, thereby to form the upper electrode including the polysilicon film in the trenches.. ... Renesas Electronics Corporation

 new patent  Semiconductor integrated circuit device

A semiconductor integrated circuit device with a “pad on i/o cell” structure in which a pad lead part is disposed almost in the center of an i/o part so as to reduce the chip layout area. In the i/o part, a transistor lies nearest to the periphery of the semiconductor chip. ... Renesas Electronics Corporation

 new patent  Semiconductor device manufacturing method and semiconductor wafer

A semiconductor wafer provided with a pseudo chip between a product chip and a pattern prohibiting region is prepared. With the edge portion of the semiconductor wafer left, the bottom surface of the inner semiconductor substrate is ground, and then, the semiconductor wafer is cut in a ring shape to remove the edge portion. ... Renesas Electronics Corporation

 new patent  Semiconductor device and method of manufacturing same

To provide a semiconductor device having improved performance. The semiconductor device has a first insulating film formed on the main surface of a semiconductor substrate and a second insulating film formed on the first insulating film. ... Renesas Electronics Corporation

 new patent  Semiconductor device and its manufacturing method

The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. ... Renesas Electronics Corporation

 new patent  Flash memory

In order to reduce the manufacturing cost, a flash memory includes a memory cell array formed by a plurality of memory cells arranged in a matrix shape; a plurality of word lines provided in each column of the memory cell array; a first word line driver that outputs a first voltage group to each of the word lines; and a second word line driver that outputs a second voltage group to each of the word lines together with the first word line driver.. . ... Renesas Electronics Corporation

 new patent  Security architecture and method

A security architecture and method for a system on a chip or a microcontroller. The method in one embodiment includes a first central processing unit (cpu) specifying a first address. ... Renesas Electronics Corporation

 new patent  Processor and instruction code generation device

In a processor including an instruction prefetch buffer to prefetch a group of instructions with continuous addresses from a memory, the probability of occurrence of the situation where a bus is occupied by the instruction prefetch more than necessary is reduced. The processor includes an instruction fetch address generator which controls the address and amount of the instruction to be prefetched to the instruction prefetch buffer. ... Renesas Electronics Corporation

 new patent  Semiconductor device with power on reset circuitry

A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. ... Renesas Electronics Corporation

Semiconductor device and method of manufacturing same

To achieve a semiconductor device equipped with a low on voltage and high load short circuit withstand trench gate igbt. A collector region on a back surface of a semiconductor substrate is comprised of a relatively lightly-doped p+ type first collector region and a relatively heavily-doped p++ type second collector region. ... Renesas Electronics Corporation

Image processor and semiconductor device

. . . . . . . . An object of the present invention is to detect a failure of a camera input in a system including a camera or a video transmission path (camera input). An image processor includes a hash derivation circuit having a computing unit that calculates hash values on an input screen and a storage circuit that stores the hash values. ... Renesas Electronics Corporation

Camera controller, and a calibration method for a correction lens

In open-loop control, displacement of a correction lens cannot be detected. Therefore, the displacement of the correction lens cannot be appropriately corrected. ... Renesas Electronics Corporation

Method for calibrating driving amount of actuator configured to correct blurring of image taken by camera

A method for calibrating a driving amount of an actuator configured to correct blurring of an image taken by a camera attached to a device includes: taking an image of a mark by a camera to generate a first image, the mark reflecting a predetermined posture of the device; detecting a tilt of the mark in the first image; and based on the tilt of the mark, correcting the driving amount of the actuator that is predetermined according to a sensing result of a sensor for sensing a change in a posture of the device.. . ... Renesas Electronics Corporation

Design support system

A method of and a design support system for generating a risk profile for at least part of an electronic system which is vulnerable to an attack originating from outside the system are described. The method comprises receiving an attack scenario identifying an attack and a potential target for the attack within the at least part of the system, receiving a selection, from a user, of a security analysis model for assessing the attack, receiving information identifying a selected security mechanism appliable in the at least part of an electronic system and generating a risk profile in dependence upon the security mechanism.. ... Renesas Electronics Corporation

06/28/18 / #20180183432

Semiconductor apparatus and inverter system

The present disclosure attempts to improve performance of a semiconductor apparatus including a power transistor such as an igbt. In a semiconductor apparatus, an igbt module 110 includes igbt elements swa and swb connected in parallel to each other, a resistor r1a connected to a gate terminal of the igbt element swa, and a diode d1a connected in parallel to the resistor r1a. ... Renesas Electronics Corporation

06/28/18 / #20180183411

Semiconductor device

To provide an inexpensive semiconductor device capable of suppressing the influence by crosstalk. A semiconductor device includes a signal wiring disposed in an organic interposer, an output circuit which is coupled to a first end of the signal wiring and which sets an impedance so as to generate a reflected wave antiphase to a waveform transmitted to the first end and periodically outputs data, and an input circuit which is coupled to a second end of the signal wiring and sets an impedance so as to generate a reflected wave of the same phase as a waveform transmitted to the second end. ... Renesas Electronics Corporation

06/28/18 / #20180183378

Semiconductor device and power conversion device

To solve the problem of multi-pulse control in which the load of the control software is increased and further switching/timing adjustment is required, a semiconductor device includes a control unit including a cpu and a memory, a pwm output circuit for controlling the driver ic to drive the power semiconductor device, a current detection circuit for detecting the motor current, and an angle detection circuit for detecting the angle of the motor. The pwm output circuit includes a square wave generator circuit to generate a square wave based on the angle of the angle detection circuit as well as the base square wave information.. ... Renesas Electronics Corporation

06/28/18 / #20180183365

Motor driving device and motor system

A motor driving device and a motor system that can reduce a torque ripple of a motor are provided. The current control loop detects a drive current of the motor, detects an error between the detected value of the drive current and a current indication value as a target value of the drive current, and determines the duty of the pwm signal reflecting the error concerned. ... Renesas Electronics Corporation

06/28/18 / #20180182890

Semiconductor device and method for manufacturing the same

A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation film disposed at the first surface, and a gate electrode. The semiconductor substrate has a source region, a drain region, a drift region, and a body region. ... Renesas Electronics Corporation

06/28/18 / #20180182875

Trench gate igbt

A high-performance trench gate igbt is provided. A trench gate igbt according to one embodiment includes: a semiconductor substrate (11); a channel layer (15) provided on the semiconductor substrate (11); two floating p-type layer (12) provided on both sides of the channel layer 15, the floating p-type layers (12) being deeper than the channel layer (15); two emitter trenches (13) disposed between the two floating p-type layers (12), the emitter trenches (13) being respectively in contact with the floating p-type layers (12); at least two gate trenches (14) disposed between the two emitter trenches (13); and a source diffusion layer (19) disposed between the two gate trenches 14, the source diffusion layer (19) being in contact with each of the gate trenches (14).. ... Renesas Electronics Corporation

06/28/18 / #20180182855

Semiconductor device and method for manufacturing the same

Characteristics of a semiconductor device are improved. An active region including a mos transistor is structured such that the active region includes, in a plan view, a first side extending in x direction, a second side opposing the first side, an extension part projecting from the first side, and a cut-away portion recessed from the second side. ... Renesas Electronics Corporation

06/28/18 / #20180182850

Semiconductor device and method of manufacturing thereof

In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.. . ... Renesas Electronics Corporation

06/28/18 / #20180182790

Method for manufacturing a semiconductor device

The pixel characteristics are prevented from being degraded due to diffusion of electrons and fe (iron) from the surface of an element isolation trench formed in the top surface of a semiconductor substrate into a photodiode forming the pixel of an image sensing element. Further, oxygen is prevented from being diffused from a boron oxide film formed at the surface of the element isolation trench into the photodiode. ... Renesas Electronics Corporation

06/28/18 / #20180182774

Semiconductor device and method of manufacturing the semiconductor device

Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a memory gate electrode and a fin as components of a nonvolatile memory. ... Renesas Electronics Corporation

06/28/18 / #20180182768

Manufacturing method of semiconductor device and semiconductor device

After a dummy control gate electrode and a memory gate electrode are formed and an interlayer insulating film is formed so as to cover the gate electrodes, the interlayer insulating film is polished to expose the dummy control gate electrode and the memory gate electrode. Thereafter, the dummy control gate electrode is removed by etching, and then a control gate electrode is formed in a trench which is a region from which the dummy control gate electrode has been removed. ... Renesas Electronics Corporation

06/28/18 / #20180182767

Semiconductor device and method for manufacturing the same

A semiconductor device in which the cell size is small and disturbance in reading operation is suppressed, and a method for manufacturing the semiconductor device. A first memory cell has a first memory transistor. ... Renesas Electronics Corporation

06/28/18 / #20180182751

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device of the present invention includes, in a region 1c, a top electrode made by a semiconductor layer of an soi substrate, a capacitive insulating film made by an insulating layer, a bottom electrode made by a supporting board, and a lead part (a high-concentration impurity region of an n type) of the bottom electrode coupled to the supporting board. An soi transistor in a region 1b is formed over a main surface of the semiconductor layer over the insulating layer as a thin film, and threshold voltage can be adjusted by applying a voltage to a well arranged on the rear face side of the insulating layer.. ... Renesas Electronics Corporation

06/28/18 / #20180182731

Method of manufacturing semiconductor device

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. ... Renesas Electronics Corporation

06/28/18 / #20180182719

Semiconductor device

A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. ... Renesas Electronics Corporation

06/28/18 / #20180182706

Semiconductor device

A semiconductor device includes an insulating film formed to cover an electric fuse (ef1), an insulating film (il1), an insulating film (il2), an electric fuse (ef1), an insulating film (il1), and an insulating film (il2). The electric fuse (ef1) includes a fuse-blowing portion (fc1), a first pad portion (pd1), and a second pad portion (pd2). ... Renesas Electronics Corporation

06/28/18 / #20180182700

Semiconductor device

A semiconductor device which provides improved reliability. The semiconductor device includes: a wiring substrate having a first surface and a second surface opposite to the first surface; a chip condenser built in the wiring substrate, having a first electrode and a second electrode; a first terminal and a second terminal disposed on the first surface; and a third terminal disposed on the second surface. ... Renesas Electronics Corporation

06/28/18 / #20180182692

Semiconductor device and manufacturing method thereof

An improvement is achieved in the reliability of a semiconductor device. A sip includes an analog chip, a microcomputer chip having a main surface smaller in area than a main surface of the analog chip, a die pad over which the analog chip and the microcomputer chip are mounted, and a plurality of leads arranged so as to surround the die pad. ... Renesas Electronics Corporation

06/28/18 / #20180182644

Method for manufacturing a semiconductor device

A compact and high-reliability semiconductor device is implemented. The bonding wires situated in the vicinity of a gate, and the bonding wires situated in the vicinity of a vent facing to the gate across the center of a semiconductor chip in a molding step have a loop shape falling inwardly of the semiconductor chip, have a weaker pulling force (tension) than those of other bonding wires, and are loosely stretched with a margin. ... Renesas Electronics Corporation

06/28/18 / #20180182631

Semiconductor device and method of manufacturing the same

In a split-gate-type monos memory, increase in a defective rate due to variation in a gate length of a memory gate electrode is prevented, and reliability of a semiconductor device is improved. A first dry etching having a high anisotropic property but a low selection ratio relative to silicon oxide is performed to a silicon film, and then, a second dry etching having a low anisotropic property but a high selection ratio relative to silicon oxide is performed thereto, so that a control gate electrode composed of the silicon film is formed, and then, a sidewall-shaped memory gate electrode is formed on a side surface of the control gate electrode. ... Renesas Electronics Corporation

06/28/18 / #20180182125

Method of determining focus lens position, control program for making computer execute the method, and imaging device

A method of determining a position of a focus lens includes the steps of detecting luminance values corresponding to a plurality of imaging elements which detect light via a focus lens while moving the focus lens, calculating a contrast value for evaluation of a focused state of a subject image on the basis of the detected luminance values corresponding to the imaging elements, specifying the largest luminance value in the detected luminance values corresponding to the imaging elements, specifying a range in which the largest luminance value is not less than a value which is determined in advance in a moving range of the focus lens and determining the position of the focus lens on the basis of the contrast value in the specified range of the position of the focus lens.. . ... Renesas Electronics Corporation

06/28/18 / #20180181726

License managing method, semiconductor device suitable for license management and license managing system

A license managing method including an execution device that executes software and a software storage device coupled to the execution device further includes a license storage device that stores license information indicating the number of licenses for permitting a license of the software, and the license managing method includes the step of license-managing of controlling storage of the software to be downloaded into the software storage device or execution of the software by the execution device based on the license information stored in the license storage device when the software whose license permission is required is downloaded.. . ... Renesas Electronics Corporation

06/28/18 / #20180181696

Element model and process design kit

According to an embodiment, element models include a first transistor model, a second transistor model, and a variable resistor model. The first transistor model simulates a characteristic of a selection gate transistor whose channel resistance is changed by a selection gate voltage applied to a selection gate. ... Renesas Electronics Corporation

06/28/18 / #20180181493

Cache memory device and semiconductor device

A cache memory device includes: data memory that stores cache data corresponding to data in main memory; tag memory that stores tag information to identify the cache data; an address estimation unit that estimates a look-ahead address to be accessed next; a cache hit determination unit that performs cache hit determination on the look-ahead address, based on the stored tag information; and an access controller that accesses the data memory or the main memory based on the retained cache hit determination result in response to a next access.. . ... Renesas Electronics Corporation

06/28/18 / #20180181457

Semiconductor device

The aim of the present disclosure is to provide a watchdog timer that can perform a fault diagnosis during the actual use of a semiconductor device. In a semiconductor device provided with a watchdog timer, the watchdog timer includes a counter; a counter control circuit that changes a count value of the counter to a desired value in the refresh period of the count value; and a fault diagnosis module. ... Renesas Electronics Corporation

06/28/18 / #20180181331

Semiconductor device, security process execution device, and security process execution method

It is possible to prevent a central processing unit and a security processing unit from accessing of a non-volatile memory at the same time. A data flash 13 includes a secure area 31 and a user area 32. ... Renesas Electronics Corporation

06/28/18 / #20180181170

Semiconductor device, operating condition controlling method, and non-transitory computer readable medium

An operating condition is controlled from viewpoints both processing capacity and power consumption. A cpu 11 includes, for example, a plurality of cpu cores 11a to 11d, and configured to such that an operating condition can be varied. ... Renesas Electronics Corporation

06/28/18 / #20180180827

Semiconductor device and manufacturing method thereof

A si photonics device includes: a first semiconductor chip; a second semiconductor chip having a laser diode and mounted on the first semiconductor chip; a third semiconductor chip taking in a laser beam emitted from the laser diode and mounted on the first semiconductor chip; and a resin layer disposed on the first semiconductor chip so as to face the second semiconductor chip. Further, the si photonics device has: a bump electrode connecting the second semiconductor chip and an upper layer electrode pad provided on the resin layer of the first semiconductor chip; and a bump electrode connecting the first semiconductor chip and the third semiconductor chip, and the second semiconductor chip is mounted on the first semiconductor chip via the resin layer.. ... Renesas Electronics Corporation

06/21/18 / #20180176491

Image pickup device

In a related image pickup device, there is a problem that an effect of noises that are superimposed on a signal on a signal reading path from a pixel circuit cannot be reduced. According to an embodiment, an image pickup device includes a first sampling-and-holding circuit 51 configured to sample a signal output from a pixel circuit, a buffer circuit 52 configured to amplify a signal held in the first sampling-and-holding circuit 51, and a second sampling-and-holding circuit 53 configured to sample a signal output from the buffer circuit 52, in which the image pickup device obtains a digital value corresponding to a signal output from the pixel circuit by passing the signal output from the pixel circuit through the first sampling-and-holding circuit 51, the buffer circuit 52, and the second sampling-and-holding circuit 53 in this order, and thereby transmitting the signal to an analog/digital conversion circuit 24.. ... Renesas Electronics Corporation

06/21/18 / #20180175866

Semiconductor device and control system

An abnormal rise of oscillation frequencies of pll circuits in conventional semiconductor devices has been an inevitable problem. This semiconductor device includes a phase difference detection circuit, a loop filter, and a voltage controlled oscillator that outputs an output clock signal. ... Renesas Electronics Corporation

06/21/18 / #20180175589

Semiconductor laser, light source unit, communication system, and wavelength division multiplexing optical communication system

Provided is a distributed feed back semiconductor laser including a phase shift part capable of obtaining an excellent single-mode yield and a high luminous efficiency. A diffraction grating (105) is formed so as to extend in a guiding direction of a resonator between an end surface at which a low reflective film (111) is formed and an end surface at which a high reflective film (110) is formed. ... Renesas Electronics Corporation

06/21/18 / #20180175192

Semiconductor device and method for manufacturing the same

A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a p+ source region and a p+ drain region. A p− drift region is located below the isolation trench and connected to the p+ drain region. ... Renesas Electronics Corporation

06/21/18 / #20180175136

Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon

An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.. . ... Renesas Electronics Corporation

06/21/18 / #20180175067

Semiconductor device and a method of manufacturing the same

A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. ... Renesas Electronics Corporation

06/21/18 / #20180175014

Semiconductor device

In a semiconductor device (sd), plate-shaped upper electrodes (uel) are formed on a lower electrode (lel) with a dielectric film (dec) interposed therebetween. The lower electrode (lel), the dielectric film (dec), and the upper electrodes (uel) constitute mim capacitors (mca). ... Renesas Electronics Corporation

06/21/18 / #20180174929

Semiconductor manufacturing device, semiconductor manufacturing method and semiconductor device

According to one embodiment, provided is a semiconductor manufacturing device including a probe card arranged to face a semiconductor chip to be measured, wherein the probe card has: a test probe that obtains the electric characteristics of the semiconductor chip by being brought into contact with a test pad; a temperature extraction probe that extracts temperature information of the semiconductor chip by being brought into contact with a temperature extraction pad that is coupled to a temperature sensor; a contact member that is brought into contact with the upper surface of the semiconductor chip to absorb the heat of the semiconductor chip; a driving unit that moves the contact member so as to allow the contact member to be brought into contact with or to be separated from the upper surface; and a control unit that controls the driving of the driving unit on the basis of the temperature information.. . ... Renesas Electronics Corporation

06/21/18 / #20180174900

Semiconductor device having a discontinued part between a first insulating film and second insulating film

A semiconductor device, in which an increase in the size of a product can be suppressed and a withstand voltage between wiring layers can be improved, and a manufacturing method thereof are provided. A discontinued part, in which the interface between an interlayer insulating film and a passivation film is discontinued, is formed between a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween. ... Renesas Electronics Corporation

06/21/18 / #20180173898

Data processing apparatus and access control method

According to one embodiment, a data processing apparatus includes an access controller configured to control access by a cpu to a processor. The access controller selects permission configuration information and an identifier table to be used for the access control using processor selection information output from the cpu, determines as intermediate identifier mid that corresponds to an access request identifier spid output from the cpu using the selected identifier table, and determines accessibility of the cpu to the processor using the selected permission configuration information and the determined intermediate identifier mid.. ... Renesas Electronics Corporation

06/21/18 / #20180173819

Semiconductor circuit design device

A logic model of a nonvolatile memory device is commonly used in high order synthesis and a logic simulation. Further, the logic model of the nonvolatile memory device divides a one-time rewriting request area of the nonvolatile memory device into a plurality of areas, and rewrites each of the divided areas in a time division manner.. ... Renesas Electronics Corporation

06/21/18 / #20180173290

Data processing system and data processing method

A data processing system includes: a first data processing apparatus configured to execute first processing on input data; and a second data processing apparatus configured to migrate the first processing from the first data processing apparatus and execute the first processing, in which the second data processing apparatus snoops the input data input to the first data processing apparatus when it migrates the first processing from the first data processing apparatus.. . ... Renesas Electronics Corporation

06/21/18 / #20180172758

Voltage monitoring circuit and semiconductor device

A voltage monitoring circuit and a semiconductor device that can reduce time required for self-diagnosis are provided. A selection circuit selects one of a determination threshold voltage for normal use, a determination threshold voltage for self-diagnosis, and a determination threshold voltage for boost having a potential difference larger than that of the determination threshold voltage for normal use. ... Renesas Electronics Corporation

06/21/18 / #20180172523

Voltage detecting device, temperature detecting device having the same, voltage detecting method, and temperature detecting method having the same

According to an embodiment, a voltage detecting device includes: a first operational amplifier having an inversion input terminal to which first detection voltage is supplied and a non-inversion input terminal to which voltage of an external output terminal is supplied; a first transistor provided between the external output terminal and a reference voltage terminal and having a gate to which an output voltage of the first operational amplifier is applied; a second operational amplifier having an inversion input terminal to which second detection voltage is supplied and a non-inversion input terminal to which the voltage of the external output terminal is supplied; and a second transistor provided between the external output terminal and the reference voltage terminal and having a gate to which output voltage of the second operational amplifier is applied.. . ... Renesas Electronics Corporation

06/14/18 / #20180167238

Rate determination apparatus, rate determination method, and reception apparatus

A rate determination apparatus 1 includes a reception unit 2 configured to receive a transmission frame modulated by an fsk modulation scheme, a symbol rate detection unit 3 configured to detect a symbol rate based on a period of a preamble portion in the received transmission frame, a multilevel symbol detection unit 4 configured to detect a multilevel-modulated multilevel symbol based on a frequency deviation in the received transmission frame, and a bit rate determination unit 5 configured to determine a bit rate based on the detected symbol rate and the detected multilevel symbol. Then, the bit rate can be determined during communication.. ... Renesas Electronics Corporation

06/14/18 / #20180167090

Signal communication device, signal processing system, and signal communication method

It is possible to utilize a system with a long response time using electricity generated by each generator of each communication unit. Communication units 20 and 30 include generators 21 and 31 for generating electricity utilizing a predetermined action included in a series of actions, and wireless communication circuits 24 and 34 operated by electricity supplied from the generators, respectively. ... Renesas Electronics Corporation

06/14/18 / #20180166886

Power feeding device, power feeding system, and control method of power feeding device

A power feeding device coupled to a power receiving device via a usb cable having an authentication chip includes: a communication circuit communicating with the power receiving device; an authentication circuit executing an authentication process with the authentication chip; a power supply circuit supplying power to a power supply line in the usb cable; and a control circuit controlling the power supply circuit based on the authentication process and power supply information of the power feeding device from the communication circuit. When the authentication process between the authentication chip and the authentication circuit succeeds, the control circuit instructs to supply requested voltage and current to the power supply line. ... Renesas Electronics Corporation

06/14/18 / #20180166554

Semiconductor device and manufacturing method

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination region of the semiconductor substrate, second conductivity type resurf layers, and an edge termination region formed in the resurf layers. ... Renesas Electronics Corporation

06/14/18 / #20180166459

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.. . ... Renesas Electronics Corporation

06/14/18 / #20180166430

Semiconductor device and electronic apparatus

A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first fet including a first gate electrode, a first source, and a first drain, a second semiconductor chip including a second substrate having a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second fet having a second gate electrode, a second source, and a second drain, and a third semiconductor chip including a third substrate having silicon, the third semiconductor chip being formed with a mosfet including a third gate electrode, a third source, and a third drain. The first semiconductor chip and the second semiconductor chip are mounted over a first chip mounting section, and the third semiconductor chip is mounted over a second chip mounting section.. ... Renesas Electronics Corporation

06/14/18 / #20180166401

Semiconductor device

The present disclosure provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Vias are formed in each layer on a dicing region side. ... Renesas Electronics Corporation

06/14/18 / #20180166132

Semiconductor storage device

A semiconductor storage device includes an sram memory cell composed of a drive transistor, a transfer transistor and a load transistor, an i/o circuit that is connected to bit lines connected to the memory cell, and an operating mode control circuit that switches an operating mode of the i/o circuit between a resume standby mode and a normal operation mode, wherein the i/o circuit includes a write driver that writes data to bit lines, a sense amplifier that reads data from the bit lines, a first switch inserted between the bit lines and the write driver, a second switch inserted between the bit lines and the sense amplifier, a precharge circuit that precharges the bit lines, and a control circuit that controls the first and second switches and the precharge circuit according to a signal from the operating mode control circuit.. . ... Renesas Electronics Corporation

06/14/18 / #20180165231

Microcomputer

A microcomputer is provided for each of industrial apparatuses to synchronously control them and includes a cpu, a peripheral module, and a communication interface. The peripheral module controls an external apparatus based on a specified control parameter. ... Renesas Electronics Corporation

06/07/18 / #20180159540

Semiconductor device, control system, and synchronization method

. . In a system for performing clock generation for each semiconductor device, synchronization between the semiconductor devices is achieved without causing a count value in a counter to be discontinuously changed. A semiconductor device 1 includes a clock oscillator 2, a counter 3 configured to count the number of clocks, a periodic register 4 in which a value corresponding to a period for synchronization is set, a comparison circuit 5 configured to compare the count value in the counter 3 with the set value in the periodic register 4, a match flag register 6 in which a predetermined value is set when the count value coincides with the set value, a match output terminal 7 configured to output the value in the match flag register 6 from the own semiconductor device, a match input terminal 8 to which a value output from another semiconductor device to be synchronized is input, and a reset circuit configured to reset the counter 3 and the match flag register 6 when both the value in the match flag register 6 of the own semiconductor device and the value input to the match input terminal 8 become a predetermined value.. ... Renesas Electronics Corporation

06/07/18 / #20180159525

Switching device

A high side transistor is coupled between a high potential side power source node and an intermediate node, and a recirculation diode is coupled between a low potential side power source node and the intermediate node, thereby forming a recirculation path when the high side transistor is off. A power source supply line couples the high potential side power source node with one end of the high side transistor. ... Renesas Electronics Corporation

06/07/18 / #20180159521

Semiconductor device and power conversion apparatus

A semiconductor device includes a drive control circuit which drives a gate terminal of an igbt. The drive control circuit includes a state machine control circuit, a base data memory and a current drive circuit which drives the igbt on the basis of driving current information stored in the base data memory. ... Renesas Electronics Corporation

06/07/18 / #20180158910

Semiconductor device and manufacturing method for the semiconductor device

In a semiconductor device including a super junction structure that p-type columns and n-type columns are periodically arranged, a depth of a p-type column region in a cell region that a semiconductor element is formed is made shallower than a depth of a p-type column region in an intermediate region which surrounds the cell region. Thereby, a breakdown voltage of the cell region becomes lower than a breakdown voltage of the intermediate region. ... Renesas Electronics Corporation

06/07/18 / #20180158816

Semiconductor device and method of manufacturing the same

A first transistor required for decreasing leak current and a second transistor required for compatibility of high speed operation and low power consumption can be formed over an identical substrate and sufficient performance can be provided to the two types of the transistors respectively. Decrease in the leak current is required for the first transistor. ... Renesas Electronics Corporation

06/07/18 / #20180158771

Semiconductor device

It is intended to reduce the price of a semiconductor device and increase the reliability thereof. In an interposer, a plurality of wiring layers are disposed between uppermost-layer wiring and lowermost-layer wiring. ... Renesas Electronics Corporation

06/07/18 / #20180158522

Multiport memory, memory macro and semiconductor device

A circuit includes a memory cell array which includes: a plurality of memory cells; a plurality of word lines coupled to the memory cells, respectively, and a plurality of bit lines coupled to the memory cells, an address control circuit which includes: a first latch circuit into which a first address signal is input and from which a first output signal is output; a selection circuit into which a second address signal and the first output signal are input and which selects the first output signal or the second address signal for outputting the first output signal or the second address signal as a second output signal; a second latch circuit into which the second output signal is input and from which a third output signal is output; a decode circuit which decodes the third output signal and outputs a fourth output signal; and a word line drive circuit.. . ... Renesas Electronics Corporation

06/07/18 / #20180158513

Semiconductor device

The semiconductor device includes a supply circuit for supplying a boosted voltage to a distal end of a wiring driven by a drive signal. The supply circuit includes an inverter circuit having an input coupled to the wiring, and a switch element controlled by an output signal of the inverter circuit. ... Renesas Electronics Corporation

06/07/18 / #20180158511

Semiconductor memory device

When threshold voltages of constituent transistors are reduced in order to operate an sram circuit at a low voltage, there is a problem in that a leakage current of the transistors is increased and, as a result, electric power consumption when the sram circuit is not operated while storing data is increased. Therefore, there is provided a technique for reducing the leakage current of mos transistors in sram memory cells mc by controlling a potential of a source line ssl of the driver mos transistors in the memory cells.. ... Renesas Electronics Corporation

06/07/18 / #20180156859

Semiconductor device

To provide a semiconductor device that can predict wear-out failure with high accuracy based on an accumulated value of degradation stress, such as a power-source voltage or an environmental temperature, imposed to the semiconductor device, the semiconductor device includes a first circuit that holds a first accumulated degradation stress count value, a second circuit that holds a second accumulated degradation stress count value, a third circuit that holds a count value of an accumulated operating time or a value corresponding thereto, and a fourth circuit or an operating unit that receives the first accumulated degradation stress count value, the second accumulated degradation stress count value, and the count value of the accumulated operating time or the value corresponding to the value of the accumulated operating time.. . ... Renesas Electronics Corporation

06/07/18 / #20180156675

Temperature measurement circuit and method, and microcomputer unit

It is possible to detect a failure in a temperature sensor while preventing enlarging of a circuit scale. A temperature measurement circuit 10 includes temperature sensors 20 and 30, and a comparator 40. ... Renesas Electronics Corporation

05/31/18 / #20180152829

Wireless communication apparatus, identification information setup method, and program

. . A wireless communication apparatus includes a communication controller and an identification information setup portion. The communication controller establishes first communication, namely, communication with a first wireless communication apparatus having identification information already set and receives first information, namely, information to settle the identification information to be set, from the first wireless communication apparatus. ... Renesas Electronics Corporation

05/31/18 / #20180152656

Solid-state imaging device

Provided is a solid-state imaging device capable of increasing the speed of an a/d converter. The solid-state imaging device includes a successive approximation a/d converter that performs a/d conversion on an analog pixel signal. ... Renesas Electronics Corporation

05/31/18 / #20180152153

Semiconductor integrated circuit, communication module, and smart meter

A semiconductor integrated circuit includes a low-noise amplifier circuit, a transformer, and an bsd protection circuit. The low-noise amplifier circuit amplifies a radio signal that is supplied to an input terminal. ... Renesas Electronics Corporation

05/31/18 / #20180152001

Semiconductor laser, light source unit, and laser light irradiation device

A waveguide includes a narrow waveguide, wide waveguides, and tapered waveguides. A width ww of the wide waveguides is wider than a width wn of the narrow waveguide. ... Renesas Electronics Corporation

05/31/18 / #20180151711

Semiconductor device, rc-igbt, and method of manufacturing semiconductor device

According to one embodiment, a semiconductor device 100 includes a semiconductor substrate 1 including a first principal surface and a second principal surface, an emitter electrode 46, a gate wiring 49, a collector electrode 43, a first unit cell region 10 that is extended along one direction in a plane parallel to the first principal surface, and a second unit cell region 20 that is extended along one direction, in which the semiconductor substrate 1 of the first unit cell region 10 and the second unit cell region 20 includes an n− type drift layer 39, an n type hole barrier layer 38, a trench electrode 13, a p type body layer 36, an insulating film 35, an n type field stop layer 41, and a p+ type collector layer 42, and the second unit cell region 20 includes an n type cathode layer 47 that is fitted into the collector layer 42 and is extended along one direction.. . ... Renesas Electronics Corporation

05/31/18 / #20180151479

Semiconductor device and manufacturing method of the same

In order to improve reliability of a semiconductor device, the semiconductor device includes a semiconductor chip, a die pad, a plurality of leads, and a sealing portion. The die pad and the leads are made of a metal material mainly containing copper. ... Renesas Electronics Corporation

05/31/18 / #20180151460

Semiconductor device

A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. ... Renesas Electronics Corporation

05/31/18 / #20180151410

Method of manufacturing semiconductor device

To improve the characteristics of a semiconductor device having a substrate contact formed in a deep trench. In a method of forming a plug psub in a deep trench dt2 that penetrates an n-type buried layer nbl and reaches a p-type epitaxial layer pep1, the plug psub is formed in the deep trench dt2 after a metal silicide layer sil1 is formed in the p-type epitaxial layer pep1. ... Renesas Electronics Corporation

05/31/18 / #20180151377

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed over the first nitride semiconductor layer and having a band gap wider than a band gap of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer and reaching an inside of the first nitride semiconductor layer, a gate electrode placed in the trench over a gate insulating film, and a first electrode and a second electrode formed over the second nitride semiconductor layer on both sides of the gate electrode, respectively.. . ... Renesas Electronics Corporation

05/31/18 / #20180151228

Semiconductor device

A semiconductor device includes a memory unit and a control unit which controls the memory unit. The memory unit a memory which is configured with a non-volatile memory device, and stores setting information necessary for rewriting, a first control circuit which has a first register and a rewrite end flag, and a power source circuit which generates a rewrite voltage. ... Renesas Electronics Corporation

05/31/18 / #20180150428

Data processing device, data processing system and method

A data processing device includes a data selector circuit that divides a plurality of types of data into another plurality of types of data in accordance with a classification of the data, a plurality of compression circuits that respectively compress the plurality of types of data in parallel with each other in accordance with each of the plurality of types of data, and a data transmission circuit that transmits the plurality of types of compressed data to a terminal.. . ... Renesas Electronics Corporation

05/31/18 / #20180150399

Semiconductor device and method for prefetching to cache memory

A microcontroller includes multiple ways each including only one tag. When a first access and a second access are accesses performed in succession to consecutive addresses, and when the second access is the access through a first way, a cache controller performs the following operations: prefetching to the way whose tag value is smaller by 1 than the tag value corresponding to the first way when the second access is the access in the direction in which the address is incremented with respect to the first access; and prefetching to the way whose tag value is greater by 1 than the tag value corresponding to the first way when the access is in the direction in which the address is decremented.. ... Renesas Electronics Corporation

05/31/18 / #20180150386

Multi-processor and multi-processor system

The size of a multi-processor is prevented from increasing even when the number of processor cores is increased. The multi-processor includes a plurality of cores and a debugging control unit. ... Renesas Electronics Corporation

05/31/18 / #20180149831

Image sensor

In an image sensor according to related art, charge information cannot be read at the same time from a pair of photoelectric conversion elements placed corresponding to one microlens. According to one embodiment, an image sensor includes a first photoelectric conversion element and a second photoelectric conversion element placed corresponding to one microlens, a first transfer transistor placed corresponding to the first photoelectric conversion element and a second transfer transistor placed corresponding to the second photoelectric conversion element, a read timing signal line that supplies a common read timing signal to the first transfer transistor and the second transfer transistor, a first output line that outputs a signal of the first photoelectric conversion element to the outside, and a second output line that outputs a signal of the second photoelectric conversion element to the outside.. ... Renesas Electronics Corporation

05/31/18 / #20180149812

Semiconductor device and method of manufacturing the same

An soi substrate is attracted to and detached from an electrostatic chuck included in a semiconductor manufacturing device without failures. A semiconductor device includes a semiconductor substrate made of silicon, a first insulating film formed on a main surface of the semiconductor substrate and configured to generate compression stress to silicon, a waveguide, made of silicon, formed on the first insulating film, and a first interlayer insulating film formed on the first insulating film so as to cover the waveguide. ... Renesas Electronics Corporation

05/24/18 / #20180145662

Input/output system, input device, and control method of input/output system

The present invention is directed to determine validity of input data without increasing the number of data lines. An input/output system has an output device and an input device. ... Renesas Electronics Corporation

05/24/18 / #20180145647

Semiconductor integrated circuit, communication module, and smart meter

A semiconductor integrated circuit includes a transformer that includes a first winding and a second winding, a low-noise amplifier circuit that includes an input terminal in which at least one end of the second winding of the transformer is connected to the input terminal; and a switch that is provided between the one end and another end of the second winding of the transformer. The switch is opened and the transformer functions as an input impedance matching circuit for the low-noise amplifier circuit in a period in which a reception signal is supplied to the first winding of the transformer. ... Renesas Electronics Corporation

05/24/18 / #20180145645

Optical coupling circuit including a light-receiving unit provided not to receive optical signal and signal processing device

A light-emitting unit outputs an optical signal corresponding to an input electric signal. A light-receiving unit is electrically insulated from the light-emitting unit and outputs an electric signal according to the received optical signal as an output signal. ... Renesas Electronics Corporation

05/24/18 / #20180145137

Manufacturing method of semiconductor device

To improve the performance of a semiconductor device, there is provided with a manufacturing method of a semiconductor device including a step of removing an oxide film formed on the surface of a silicon carbide substrate including the inner wall of a trench, before forming the hydrogen annealing.. . ... Renesas Electronics Corporation

05/24/18 / #20180145134

Semiconductor device

An improvement is achieved in the ie effect of a semiconductor device including an igbt having an active cell region with an ege structure. Each of a plurality of hybrid cell regions extending in a y-axis direction has first, second, and third trench electrodes extending in the y-axis direction, a p-type body region, and contact trenches provided between the first and second trench electrodes and between the first and third trench electrodes to extend in the y-axis direction and reach middle points in the p-type body region. ... Renesas Electronics Corporation

05/24/18 / #20180145132

Semiconductor device and method of manufacturing the same

A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation structure having a first depth, and a gate electrode. The semiconductor substrate has source and drain regions, a reverse conductivity region having a second depth, a body region, and a drift region. ... Renesas Electronics Corporation

05/24/18 / #20180145001

Manufacturing method of semiconductor device

Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. ... Renesas Electronics Corporation

05/24/18 / #20180144807

Semiconductor device

The present disclosure provides a semiconductor device that can reduce the power consumption. The semiconductor device includes memory cells arranged in a matrix form, and a verify circuit that performs a verify operation to verify whether or not data is written to a memory cell. ... Renesas Electronics Corporation

05/24/18 / #20180144790

Semiconductor device

A logic circuit in a system lsi is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an sram circuit of the system lsi controls a substrate bias to reduce leakage current.. ... Renesas Electronics Corporation

05/24/18 / #20180143900

Microcomputer having processor capable of changing endian based on endian information in memory

There is a need to provide a microcomputer capable of eliminating an external terminal for endian selection. Flash memory includes a user boot area for storing a program executed in user boot mode and corresponding endian information and a user area for storing a program executed in user mode and corresponding endian information. ... Renesas Electronics Corporation

05/24/18 / #20180143229

Semiconductor device and measuring method

There is a need for high-order frequency measurement without greatly increasing consumption currents and chip die sizes. A semiconductor device includes: an electric power measuring portion that performs electric power measurement; a high-order frequency measuring portion that performs high-order frequency measurement; and a clock controller that supplies an electric power measuring portion with a first clock signal at a first sampling frequency and supplies a high-order frequency measuring portion with a second clock signal at a second sampling frequency. ... Renesas Electronics Corporation

05/17/18 / #20180139460

Image processing device and semiconductor device

. . In an image processing device, a motion image decoding processing unit extracts a feature amount of a target image to be decoded from an input stream, and changes a read size of a cache fill from an external memory to a cache memory, based on the feature amount. The feature amount represents an intra macro block ratio in, for example, one picture (frames or fields), or a motion vector variation. ... Renesas Electronics Corporation

05/17/18 / #20180138828

Semiconductor module

Reliability of a semiconductor device is improved. A third semiconductor chip on which a control circuit is formed, and a first semiconductor chip of a plurality of igbt chips are electrically connected via a high-side relay board. ... Renesas Electronics Corporation

05/17/18 / #20180138325

Semiconductor device

Germanium (ge) contamination to a semiconductor manufacturing apparatus is suppressed. Germanium is a dissimilar material in a silicon semiconductor process. ... Renesas Electronics Corporation

05/17/18 / #20180138318

Semiconductor device and method for manufacturing same

A semiconductor device includes a semiconductor substrate including a main surface, an element separation film formed over the main surface, and a fin protruding from the element separation film and extending in the first direction in plan view. The semiconductor device further includes a control gate electrode extending in the second direction that is orthogonal to the first direction along the surface of the fin through a gate insulating film and overlaps with a first main surface of the element separation film, and a memory gate electrode extending in the second direction along the surface of the fin through an insulating film and overlaps with a second main surface of the element separation film, in which the second main surface is lower than the first main surface relative to the main surface.. ... Renesas Electronics Corporation

05/17/18 / #20180138275

Silicon carbide semiconductor device and method for manufacturing the same

A silicon carbide semiconductor device includes a silicon carbide substrate, a gate insulating film, and a gate electrode. The gate insulating film is provided as being in contact with the first main surface of the silicon carbide substrate. ... Renesas Electronics Corporation

05/17/18 / #20180138204

Semiconductor device

Reliability of a semiconductor device is improved. A p-type misfet of a thin film soi type is formed in an soi substrate including a semiconductor substrate, an insulating layer on the semiconductor substrate, and a semiconductor layer on the insulating layer, and n+-type semiconductor regions which are source and drain region of the p-type misfet are formed in the semiconductor layer and an epitaxial layer on the semiconductor layer. ... Renesas Electronics Corporation

05/17/18 / #20180138136

Semiconductor device and method of manufacturing the same

An insulating film is formed such that the insulating film covers a source electrode and a gate electrode, and an opening portion exposing a portion of the source electrode and an opening portion exposing a portion of the gate electrode are formed in the insulating film. A plated layer is formed over the source electrode exposed in the opening portion, and a plated layer is formed over the gate electrode exposed in the opening portion. ... Renesas Electronics Corporation

05/17/18 / #20180138122

Semiconductor device and manufacturing method of the same

As means for preventing a leakage of a fuse element cut by laser trimming due to a conductive residue or the like, an insulating film which has a high thermal conductivity and a relatively low adhesion is formed between an element isolation region and the fuse element in the case of forming the fuse element on the element isolation region in a groove on a main surface of an epitaxial substrate. When the fuse element is cut by performing the laser trimming, both of a part of the fuse element and the insulating film below the part of the fuse element are removed.. ... Renesas Electronics Corporation

05/17/18 / #20180138121

Semiconductor device and a method of increasing a resistance value of an electric fuse

A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.. ... Renesas Electronics Corporation

05/17/18 / #20180137022

Arithmetic operation device and virtual development environment apparatus

Provided are an arithmetic operation device and a virtual development environment apparatus making it possible to give desirable control including desirable fault injection from a test program to a virtual device model at a desirable timing.. . ... Renesas Electronics Corporation

05/17/18 / #20180136391

Semiconductor device and manufacturing method thereof

First, half etching is performed to a semiconductor layer formed on an insulating layer to form trenches at positions of slab-portion regions in which slab portions are to be formed. After filling the trenches with an insulating film, a resist mask which covers the semiconductor layer at a projecting-portion region in which a projecting portion is to be formed and whose pattern ends are located on upper surfaces of the insulating films is formed on upper surfaces of the semiconductor layer and the insulating film, and full etching is performed to the semiconductor layer with using the resist mask and the insulating film as an etching mask, thereby forming an optical waveguide constituted of the projecting portion and the slab portions. ... Renesas Electronics Corporation

05/17/18 / #20180136390

Semiconductor device and manufacturing method thereof

In a semiconductor device, first dummy patterns including a different material from transmission lines (first optical waveguide and second optical waveguide) are formed in a first region close to the transmission lines, and second dummy patterns, which include the same material as the transmission lines and do not function as the transmission lines, are formed in a second region apart from the transmission lines.. . ... Renesas Electronics Corporation

05/10/18 / #20180130900

Semiconductor device and method of manufacturing semiconductor device

To provide a semiconductor device having a substrate contact in a deep trench thereof and having an improved characteristic. A pvd-metal film (metal film formed by pvd) is used as a first barrier metal film which is a lowermost layer barrier metal film formed in a deep trench penetrating an n type epitaxial layer and a reaching a layer therebelow. ... Renesas Electronics Corporation

05/10/18 / #20180128974

Semiconductor device and manufacturing method thereof

A semiconductor device includes: a first substrate; a surface insulating film formed over an upper surface of the first substrate; a box layer formed over the surface insulating film; an optical waveguide made of an soi layer formed on the box layer; and a first interlayer insulating film formed over the box layer so as to cover the optical waveguide. The semiconductor device further includes: a trench formed in the surface insulating film and the first substrate below the optical waveguide; and a cladding layer made of a buried insulating film buried in the trench. ... Renesas Electronics Corporation

05/10/18 / #20180128869

Failure location specifying device and failure location specifying method

A failure location specifying device that can specify a failure location even if the spatial resolution is insufficient includes: an eofm measurement unit that calculates a phase difference between a measurement signal on the basis of reflected light in accordance with the operation of a circuit element arranged in a semiconductor device and a reference signal, and generates a phase map of the circuit element in the semiconductor device. A circuit simulation unit calculates the operation waveform of a circuit element included in the field of view that is extracted by a circuit extraction unit by a simulation. ... Renesas Electronics Corporation

05/10/18 / #20180128689

Signal generation circuit and temperature sensor

To provide a signal generation circuit having a short settling time of an output voltage. In a ptat signal generation circuit, a trimming circuit is coupled between the cathodes of 0-th to k-th diodes and a line of a ground voltage, the anode of the 0-th diode is coupled to a first node, the anodes of the first to the k-th diodes are coupled to a second node via a resistive element, the first node and the second node are set to the same voltage, a first current flowing through the 0-th diode and a second current flowing through the first to the k-th diodes are set to have the same value, and a third current flowing through the trimming circuit is set to have the value 2 times that of each of the first current and the second current.. ... Renesas Electronics Corporation

05/03/18 / #20180122930

Semiconductor device and method of manufacturing the semiconductor device

. . There is improved performance of a semiconductor device including a fin-type low-withstand-voltage transistor and a fin-type high-withstand-voltage transistor. A low-withstand-voltage transistor is formed on each of a plurality of first fins isolated from each other by a first element isolation film, and a high-withstand-voltage transistor, which has a channel region including tops and side surfaces of a plurality of second fins and a top of a semiconductor substrate between the second fins adjacent to each other, is formed. ... Renesas Electronics Corporation

05/03/18 / #20180122826

Semiconductor device and method of manufacturing the same

A semiconductor device using an soi (silicon on insulator) substrate, capable of preventing malfunction of misfets (metal insulator semiconductor field effect transistor) and thus improving the reliability of the semiconductor device. Moreover, the parasitic resistance of the misfets is reduced, and the performance of the semiconductor device is improved. ... Renesas Electronics Corporation

05/03/18 / #20180122767

Electronic device

An electronic device includes: a substrate having an upper surface (front surface) on which a semiconductor chip is mounted, and a lower surface (back surface) opposite to the upper surface; and a housing (case) fixed to the substrate through an adhesive material. The housing has through-holes each formed on one short side and the other short side in an x direction. ... Renesas Electronics Corporation

05/03/18 / #20180122766

Semiconductor device

A performance of a semiconductor device is improved. The semiconductor device according to one embodiment includes a wire that is bonded to one bonding surface at a plurality of parts in an opening formed in an insulating film of a semiconductor chip. ... Renesas Electronics Corporation

05/03/18 / #20180122727

Semiconductor device

To improve the reliability of a semiconductor device. A chip mounting portion tab5 is arranged to be shifted to the +x direction side. ... Renesas Electronics Corporation

05/03/18 / #20180122654

Manufacturing method of semiconductor device

In a mold die, a tip-end surface of each push-up pin provided on the rear surface side of a lower die cavity block and a part of the rear surface of the lower die cavity block with which the tip-end surface of each push-up pin is contacted are inclined in such a manner that a distance to a top surface of the lower die cavity block becomes longer towards the pot side where mold resin is supplied. When the lower die cavity block is returned to the initial position, the lower die cavity block is lifted while being slightly moved towards the pot block side. ... Renesas Electronics Corporation

05/03/18 / #20180122458

Multi-port memory and semiconductor device

In a multi-port memory, a first pulse signal generator circuit generates a first pulse signal following input of a clock signal. A first latch circuit sets a first start signal to a first state in response to generation of the first pulse signal, and resets the first start signal to a second state in response to a first delayed signal obtained by delaying the first start signal by a delay circuit. ... Renesas Electronics Corporation

04/19/18 / #20180108609

Sensor device

. . . . A sensor device includes a power line and a semiconductor device. The semiconductor device includes an inductor. ... Renesas Electronics Corporation

04/19/18 / #20180107481

Data processor

The risc data processor is based on the idea that in case that there are many flag-generating instructions, the number of flags generated by each instruction is increased so that a decrease of flag-generating instructions exceeds an increase of flag-using instructions in quantity, thereby achieving the decrease in instructions. With the data processor, an instruction for generating flags according to operands' data sizes is defined. ... Renesas Electronics Corporation

04/12/18 / #20180102431

Semiconductor device and manufacturing method thereof

A semiconductor device including an isolation insulating film having a first thickness that is located between a drain region and a source region; a gate electrode formed over a region located between the isolation insulating film and the source region and that includes a part serving as a channel; an interlayer insulating film formed so as to cover the gate electrode; and a contact plug formed to reach the inside of the isolation insulating film while penetrating the interlayer insulating film, wherein the contact plug includes a buried part that is formed from the surface of the isolation insulating film up to a depth corresponding to a second thickness thinner than the first thickness.. . ... Renesas Electronics Corporation

04/12/18 / #20180102360

Semiconductor device

A semiconductor chip includes a first circuit and a second circuit having different reference potentials. A first potential which is a reference potential of the first circuit is applied to the semiconductor chip through any of plural lead terminals, and a second potential which is a reference potential of the second circuit is applied to the semiconductor chip through any of plural lead terminals. ... Renesas Electronics Corporation

04/12/18 / #20180102310

Semiconductor device manufacturing method and semiconductor device

The present invention is directed to improve reliability of a semiconductor device. A semiconductor device manufacturing method includes: (a) a step of attaching a bga having a solder ball to a socket for a burn-in test; and (b) a step of performing a burn-in test of the bga by sandwiching the solder ball by conductive contact pins in the socket. ... Renesas Electronics Corporation

04/12/18 / #20180101493

Semiconductor device, method of controlling semiconductor device, and semiconductor system

The disclosed invention is to provide a semiconductor device enabling it to access an internal device within a usb cable in a simple way. Disclosed is a semiconductor device which is able to be coupled to at least one usb cable and which includes a decision unit that decides whether or not an opposite-end device is detected through the usb cable; and a control unit that, if the decision unit has judged that the opposite-end device is not detected through the usb cable, supplies one of two signal lines which are coupled to an internal device within the usb cable with a power supply voltage and implements control of communication with the internal device within the usb cable through the other one of the signal lines.. ... Renesas Electronics Corporation

04/12/18 / #20180100897

Semiconductor integrated circuit having battery control function and operation method thereof

A semiconductor integrated circuit is capable of being supplied with battery current information and battery voltage information. The semiconductor integrated circuit includes a memory function, a current integrating function, a voltage-based state of charge operating function, a current-based state of charge operating function, a comparison determination function, a correcting function, and a resistance deterioration coefficient output function. ... Renesas Electronics Corporation

04/05/18 / #20180098420

Semiconductor device

. . A semiconductor device according to an embodiment has a first semiconductor component and a second semiconductor component which are electrically connected with each other via an interposer. The interposer has a plurality of first signal wiring paths, and a plurality of second signal wiring paths each having a path distance smaller than each of the plurality of first signal wiring paths. ... Renesas Electronics Corporation

04/05/18 / #20180097492

Semiconductor integrated circuit, variable gain amplifier, and sensing system

A semiconductor integrated circuit includes a first pad provided on one end side of a first resistive element and one end side of a second resistive element externally provided, a second pad provided on a different end side of the first resistive element, a third pad provided on a different end side of the second resistive element and one end side of a third resistive element externally provided, an operation amplifier, a first signal line, wired between an output terminal of the operation amplifier and the first pad, a second signal line wired between an inverting input terminal of the operation amplifier and the second pad, a third signal line wired between the inverting input terminal of the operational amplifier and the third pad, a first esd protection element, provided to the first signal line, a fourth signal line, through which a voltage signal of the first pad.. . ... Renesas Electronics Corporation

04/05/18 / #20180097465

Semiconductor device, motor control system, and control method for semiconductor device

A semiconductor device according to one embodiment selects one of the first and second resolver/digital converters and interrupts a supply of a power supply voltage to the other one of the first and second resolver/digital converters, and when an error is detected in the selected one of the first and second resolver/digital converters, the semiconductor device starts the supply of the voltage to the other one of the first and second resolver/digital converters, and switches the one of the first and second resolver/digital converters to the other one of the first and second resolver/digital converters.. . ... Renesas Electronics Corporation

04/05/18 / #20180097070

Semiconductor device

A semiconductor device includes a channel layer formed over a substrate, a barrier layer formed on the channel layer and a gate electrode. A second gate electrode section is formed on the gate electrode via a gate insulating film. ... Renesas Electronics Corporation

04/05/18 / #20180097008

Semiconductor device

Improvements are achieved in the characteristics of a nonvolatile memory. In plan view, in a first isolation region which is an element isolation region surrounded by a first fin, a second fin, a memory gate electrode, and another memory gate electrode, a protruding portion is provided. ... Renesas Electronics Corporation

04/05/18 / #20180097007

Semiconductor device

To provide a semiconductor device having improved reliability by preventing, in a split-gate monos memory comprised of a fin type transistor, unbalanced injection distribution of electrons into a charge accumulation film due to the shape of the fin. A memory gate electrode configuring a memory cell is formed over a fin. ... Renesas Electronics Corporation

04/05/18 / #20180096961

Semiconductor device

To improve a performance of a semiconductor device, a semiconductor device includes a lead electrically coupled to a semiconductor chip via a wire. An inner portion of the lead, the semiconductor chip, and the wire are sealed by a sealing body (a resin sealing body). ... Renesas Electronics Corporation

04/05/18 / #20180096169

Semiconductor integrated circuit and system

To raise confidentiality of the value stored in the rom, in an ic having a built-in or an externally-attached rom storing a value (program and/or data) encrypted using a predetermined cryptographic key. The ic includes the rom storing the encrypted value (program and/or data), a unique code generating unit, and a decrypting unit. ... Renesas Electronics Corporation

04/05/18 / #20180095136

Battery control ic and control method therefore

A battery control ic includes a voltage measurement unit that measures, in a normal current mode, a voltage value of each of a plurality of unit battery cells forming a battery pack, and measures, in a short-time large-current mode, a voltage value of a unit battery cell that has exhibited a lowest voltage value in the normal current mode, and a calculation unit that calculates an available power value of the battery pack in the short-time large-current mode based on a voltage value, measured in the short-time large-current mode, of the unit battery cell that has exhibited the lowest voltage value in the normal current mode.. . ... Renesas Electronics Corporation

04/05/18 / #20180095115

Semiconductor device, semiconductor system, and control method of semiconductor device

An object of the present invention is to provide a semiconductor device, a semiconductor system, and a control method of a semiconductor device capable of accurately monitoring the lowest operating voltage of a circuit to be monitored. According to one embodiment, a monitor unit of a semiconductor system includes a voltage monitor that is driven by a second power supply voltage different from a first power supply voltage supplied to an internal circuit that is a circuit to be monitored and monitors the first power supply voltage, and a delay monitor that is driven by the first power supply voltage and monitors the signal propagation period of time of a critical path in the internal circuit.. ... Renesas Electronics Corporation

03/29/18 / #20180092176

Semiconductor device

. . . . . . There was a problem that it was difficult for a semiconductor device in the related art to increase the switching frequency of a step-up circuit, and it was difficult to stabilize an output current and an output voltage. A semiconductor device controls a step-up circuit including an inductor and a drive transistor to drive the inductor. ... Renesas Electronics Corporation

03/29/18 / #20180091739

Camera controller, image processing module, and semiconductor system

A camera module detects a camera shake in an optical axis in an optical system based on a detection result by a vibration detecting sensor. To correct a part amount of a camera shake, the module controls an actuator in a manner that a correction lens shifts in a plane vertical to the optical axis based on an amount of optical image stabilization. ... Renesas Electronics Corporation

03/29/18 / #20180091719

Backlight correction program and semiconductor device

In a related-art backlight correction process, an exposure time needs to be controlled, thus causing a problem for those who do not manufacture lenses and sensors on their own that it is difficult to implement the backlight correction process. According to one embodiment, a backlight correction process is performed by detecting a backlight state based on luminance information indicating a luminance distribution of an image extracted from pixel information constituting one image obtained from an image pickup device, calculating a correction setting value for correcting the backlight state of the image based on the luminance information and, correcting a backlight state of image information generated from the pixel information based on the calculated correction setting value.. ... Renesas Electronics Corporation

03/29/18 / #20180091167

Semiconductor device

According to one aspect, a semiconductor device (1) includes: an input circuit (11_1) configured to receive an analog signal, the analog signal and a digital signal being selectively input; an input circuit (11_4) configured to be driven by a power supply common to the input circuit (11_1) and receive a digital signal, the digital signal and an analog signal being selectively input; an ad converter (15) configured to perform ad conversion of the analog signal input to the input circuit (11_1); an edge detection circuit (12) configured to detect an edge of the digital signal input to the input circuit (11_4); and a control unit (13) configured to execute predetermined processing on a result of the ad conversion by the ad converter (15) based on a result of the detection by the edge detection circuit (12).. . ... Renesas Electronics Corporation

03/29/18 / #20180091130

Semiconductor device

Related-art back bias generation circuits cause a problem where a long time is required for transition between an operating state and a standby state because driving power is lowered to reduce the power consumption in the standby state. A back bias generation circuit outputs a predetermined voltage. ... Renesas Electronics Corporation

03/29/18 / #20180091107

Variable gain amplifier, correction method and receiving device

To provide a variable gain amplifier capable of correcting a dc offset voltage through simpler control even when a gain thereof is changed. A differential output type variable gain amplifier is equipped with a first voltage correction unit coupled to a preceding stage of a variable gain amplifier circuit and for outputting a first correction voltage to correct a potential difference generated between a first conductor provided with a first input resistor and a second conductor provided with a second input resistor, and a second voltage correction unit coupled to a subsequent stage of the variable gain amplifier circuit and for correcting a differential output. ... Renesas Electronics Corporation

03/29/18 / #20180091068

Input buffer, semiconductor device and engine control unit

Provided are an input buffer, a semiconductor device and an engine control unit making it possible to execute fault diagnosis in real time. The input buffer includes a first comparator which compares a voltage of an input signal with a first reference voltage, a hysteresis circuit which generates a first high voltage side or low voltage side reference voltage on the basis of a comparison result from the first comparator, a second comparator which compares the voltage of the input signal with a second reference voltage, and a hysteresis circuit which outputs a second high voltage side reference voltage which is higher than the first high voltage side reference voltage or a second low voltage side reference voltage which is lower than the first low voltage side reference voltage.. ... Renesas Electronics Corporation

03/29/18 / #20180090636

Semiconductor device and method of manufacturing the same

A provided semiconductor device includes a ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. ... Renesas Electronics Corporation








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