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Renesas Electronics Corporation patents


Recent patent applications related to Renesas Electronics Corporation. Renesas Electronics Corporation is listed as an Agent/Assignee. Note: Renesas Electronics Corporation may have other listings under different names/spellings. We're not affiliated with Renesas Electronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Renesas Electronics Corporation-related inventors


Combining temperature monitoring and true different current sensing in a multiphase voltage regulator

. . According to certain aspects, the present embodiments are directed to techniques for providing the ability to monitor one or more operational parameters of a voltage regulator. In embodiments, the voltage regulator is a multiphase voltage regulator having a plurality of power stages corresponding to each respective phase. ... Renesas Electronics Corporation

Semiconductor device and method of manufacturing the same

A performance of a semiconductor device is improved. A semiconductor device includes two element portions and an interposition portion interposed between the two element portions. ... Renesas Electronics Corporation

Semiconductor integrated circuit with guard ring

A semiconductor integrated circuit includes a first conduction-type semiconductor region, a second conduction-type first impurity region, and a guard ring formed using a first conduction-type second impurity region so as to form a protection device of an electrostatic protection circuit. The first impurity region is formed inside the semiconductor region to have a rectangular planar structure with long and short sides. ... Renesas Electronics Corporation

Semiconductor device and a method of manufacturing the same

A semiconductor device including a package substrate having, at the periphery of the main surface thereof, bonding leads disposed in a row, a semiconductor chip mounted inside of the row of the bonding leads on the main surface of the package substrate, wires for connecting pads of the semiconductor chip and the bonding leads of the substrate, a sealing body for resin sealing the semiconductor chip and the wires, and solder bumps disposed on the back surface of the package substrate. The top of a loop of each of the wires is disposed outside the wire connecting portion so that the wire connection between the bonding leads and the pads of the semiconductor chip has a stable loop shape to prevent wire connection failure.. ... Renesas Electronics Corporation

Semiconductor device and manufacturing method thereof

An improvement is achieved in the reliability of a semiconductor device. A first semiconductor chip includes a semiconductor substrate, a wiring structure formed over the semiconductor substrate, an insulating film formed over the wiring structure, and a first insulating film formed over the insulating film. ... Renesas Electronics Corporation

Method of manufacturing semiconductor device

To provide a semiconductor device having improved reliability. A method of manufacturing the semiconductor device includes connecting a wire comprised of copper with a conductive layer formed on the pad electrode of a semiconductor chip, heat treating the semiconductor chip, and then sealing the semiconductor chip and the wire with a resin.. ... Renesas Electronics Corporation

Semiconductor device and method of manufacturing the semiconductor device

Even if a via hole is displaced, erosion of a first layer made of titanium is suppressed when the via hole is cleaned. A semiconductor includes a wire layer, a side protective film, an interlayer insulating film, and via plugs. ... Renesas Electronics Corporation

Semiconductor device and method for manufacturing the same

A semiconductor device includes a wiring substrate including wiring layers, a semiconductor chip including electrode pads and mounted on the wiring substrate, and a first capacitor including a first electrode and a second electrode, and mounted on the wiring substrate. The wiring layers include a first wiring layer including a first terminal pad electrically connected with the first electrode of the first capacitor and a second terminal pad electrically connected with the second electrode of the first capacitor; and a second wiring layer on an inner side by one layer from the first wiring layer of the wiring substrate and including a first conductor pattern having a larger area than each of the first terminal pad and the second terminal pad. ... Renesas Electronics Corporation

Semiconductor device

A semiconductor device with a finfet, which provides enhanced reliability. The semiconductor device includes a first n channel fet and a second n channel fet which are coupled in series between a wiring for output of a 2-input nand circuit and a wiring for a second power potential. ... Renesas Electronics Corporation

Semiconductor device manufacturing method and semiconductor device

To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.. ... Renesas Electronics Corporation

Manufacturing method of semiconductor device and semiconductor device

In a manufacturing method of a semiconductor device, by arranging a lead in the vicinity of a gate portion serving as a resin injection port of a mold, a void is prevented from remaining within an encapsulation body when two semiconductor chips arranged so as to overlap in the y direction are encapsulated with resin. Further, a length of an inner lead portion of the lead in the y direction is greater than a length of an inner lead portion of another lead overlapping a chip mounting portion in the y direction.. ... Renesas Electronics Corporation

Semiconductor device and semiconductor device manufacturing method

A semiconductor device manufacturing method according to one embodiment includes the steps of: forming a gate insulator on a surface of a semiconductor substrate; forming at least one semiconductor element on the surface of the semiconductor substrate, the semiconductor element including a source region, a drain region, and a gate electrode; forming a first film on the surface of the semiconductor substrate; and cleaning the semiconductor substrate with an acid solution. The first film is made of a material that is oppositely charged with respect to a material constituting the semiconductor substrate in the acid solution. ... Renesas Electronics Corporation

Semiconductor device and diagnostic method therefor

An address generation circuit generates a target address to be tested in a memory. A test data generation circuit generates write data for the address and expected value data for read data from the address. ... Renesas Electronics Corporation

Storage device and storage method

A storage device includes a data memory unit and a status memory unit. The data memory unit includes a pair of flash memory cells to be read by a complementary read mode, and 1-bit data is stored therein by the pair of flash memory cells. ... Renesas Electronics Corporation

09/27/18 / #20180276850

Image processing apparatus and image processing method

An image processing apparatus according to one embodiment determines target resolutions of a plurality of source images based on a first horizontal direction size and a first vertical direction size which are a horizontal direction size and a vertical direction size of a backlight control unit of a first display, and a second horizontal direction size and a second vertical direction size which are a horizontal direction size and a vertical direction size of a backlight control unit of a second display, and converts the resolution of each of a plurality of source images such that the resolution of each of a plurality of source images becomes the target resolution.. . ... Renesas Electronics Corporation

09/27/18 / #20180271387

System and method for heart rate measurement

The heart rate of a subject can be measured on a regular basis during the subject's daily performance without causing the subject to take trouble to wear a special device or to feel bothersome to keep wearing a special device. A heart rate measurement system includes an intraoral electrode, a hand electrode, and a detection unit. ... Renesas Electronics Corporation

09/20/18 / #20180269860

Semiconductor device

A semiconductor device includes: a semiconductor chip including a level shift circuit to output a high amplitude signal from an input of a logical signal, the level shift circuit including a series coupling circuit coupled to a second power supply, a control circuit coupled to the series coupling circuit for controlling the series coupling circuit based on the logical signal, and a first potential conversion circuit coupled between the series coupling circuit and the control circuit and coupled to a first power supply. The series coupling circuit includes a plurality of first mos transistors coupled in series between the second power supply and a reference power supply, and a plurality of second mos transistors coupled in series between the second power supply and the reference power supply in series with the plurality of first mos transistors.. ... Renesas Electronics Corporation

09/20/18 / #20180269789

Semiconductor integrated circuit device and power supply system

A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side mosfet connected between the first voltage terminal and the output terminal, a low-side mosfet connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side mosfet and low-side mosfet, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side mosfet. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side mosfet, to the second gate electrode of the low-side mosfet.. ... Renesas Electronics Corporation

09/20/18 / #20180269773

Switching system

An object of the invention is to improve precision of current detection in a switching system having plural switching circuits. A first pwm timing generation circuit generates an edge timing of a pwm signal by using a comparison value and a count value and drives a first switching circuit. ... Renesas Electronics Corporation

09/20/18 / #20180269680

Power supply circuit, and method for controlling the same

A power supply system includes a plurality of voltage sources, a switch circuit that switches between a state in which the plurality of voltage sources are connected in series and a state in which the plurality of voltage sources are connected in parallel, and a voltage control circuit that boosts an input voltage. The switch circuit connects the plurality of voltage sources in series, supplies an output of the plurality of serially connected voltage sources to an output node of the voltage control circuit, thereafter connects the plurality of voltage sources in parallel, and supplies outputs of the plurality of parallel-connected voltage sources to the voltage control circuit, and the voltage control circuit boosts voltages of the plurality of parallel-connected voltage sources.. ... Renesas Electronics Corporation

09/20/18 / #20180269323

Semiconductor device and a method of manufacturing the same

A semiconductor device includes an n channel conductivity type fet having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type fet having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel fet has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel fet to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel fet. ... Renesas Electronics Corporation

09/20/18 / #20180267797

Data processing device

A data processing device has an instruction decoder, a control logic unit, and alu. The instruction decoder decodes instruction codes of an arithmetic instruction. ... Renesas Electronics Corporation

09/20/18 / #20180267729

Semiconductor device

A semiconductor device in which unwanted change in the secondary data which must be reliable is suppressed and the need for a considerable increase in the capacity of a memory unit can be avoided. Also it ensures efficient data processing by asymmetric access to the memory unit. ... Renesas Electronics Corporation

09/20/18 / #20180267623

Open loop correction for optical proximity detectors

An optical proximity detector includes a driver, light detector, analog front-end, sensor(s) that sense correction factor(s) (e.g., temperature, supply voltage and/or forward voltage drop), and a digital back end. The driver drives the light source to emit light. ... Renesas Electronics Corporation

09/20/18 / #20180267092

Semiconductor device and electronic control system including the same

According to one embodiment, a semiconductor device includes external terminals supplied with the pair of voltage signals based on a detection result of a resolver through first and second input resistances, respectively, an operation amplifier configured to amplify a potential difference between the pair of the voltage signals supplied to the external terminals, a feedback resistance disposed between an output terminal of the operation amplifier and one of two input terminals thereof, switches disposed between the two input terminals of the operation amplifier and the external terminals, respectively, and a short-circuit failure detection circuit configured to detect whether or not a short-circuit failure has occurred in the resolver based on a voltage level of each of the external terminals in a state where the switches are in an off-state.. . ... Renesas Electronics Corporation

09/06/18 / #20180254276

Semiconductor device

The semiconductor devise includes a first inverter and a second inverter which is connected thereto in series. Each of the first and the second inverters includes a p-channel transistor and an n-channel transistor, respectively. ... Renesas Electronics Corporation

09/06/18 / #20180254252

Semiconductor device

A semiconductor device includes a wiring substrate including a first surface and a second surface opposite to the first surface, a semiconductor chip including a plurality of chip electrodes and mounted over the wiring substrate, a first capacitor arranged at a position overlapping with the semiconductor chip in plan view and incorporated in the wiring substrate, and a second capacitor arranged between the first capacitor and a peripheral portion of the wiring substrate in plan view. Also, the second capacitor is inserted in series connection into a signal transmission path through which an electric signal is input to or output from the semiconductor chip.. ... Renesas Electronics Corporation

09/06/18 / #20180253127

Signal processing system, signal processing circuit, and reset control method

A cpu needs to perform reset operation when a secondary arithmetic processing unit controlled by the cpu controls a signal processing circuit. Cpu a controls module a. ... Renesas Electronics Corporation

09/06/18 / #20180253118

Voltage generating circuit

A voltage generating circuit, in which the influence of offset of an amplifier on an output voltage is reduced, has first and second bipolar transistors (q1, q2) having emitter terminals at the same electric potential. A base terminal of q1 is disposed on a collector side of q2. ... Renesas Electronics Corporation

08/23/18 / #20180241964

Semiconductor device and image processing method

An image processing apparatus includes an image processing unit that calculates two types of image data from one image data and outputs the calculated image data, a data combination unit that combines the two type of data supplied from the image processing unit and outputs the combined data to one terminal, an output buffer that adjusts an output timing of the combined data according to an instruction supplied from bus arbitration means for arbitrating a bus, and a data distribution unit that outputs the combined data output from the output buffer to the bus in a form of the combined data, or distributes the combined data and outputs the distributed data to the bus according to an external combination distribution instruction.. . ... Renesas Electronics Corporation

08/23/18 / #20180241559

Semiconductor device and information processing system for encrypted communication

In a semiconductor device and an information processing system according to one embodiment, an external device generates external device unique information by using a unique code which is a value unique to the semiconductor device, and generates second information by encrypting the first information with the use of the external device unique information. The semiconductor device stores the second information and generates the principal device unique information independently of the external device, with the use of the unique code of the semiconductor device holding the second information, and decrypts the second information with the use of the principal device unique information to obtain the first information.. ... Renesas Electronics Corporation

08/23/18 / #20180241319

Electronic device

An electronic device includes a first substrate, a wiring substrate (second substrate) disposed over the first substrate, and an enclosure (case) in which the first substrate and the wiring substrate are accommodated and that has a first side and a second side. A driver component (semiconductor component) is mounted on the wiring substrate. ... Renesas Electronics Corporation

08/23/18 / #20180240905

Semiconductor device and method of manufacturing same

To provide a semiconductor device including a power semiconductor element having improved reliability. The semiconductor device has a cell region and a peripheral region formed outside the cell region. ... Renesas Electronics Corporation

08/23/18 / #20180240801

Semiconductor integrated circuit device

In an image information chip or the like, a multi-port sram is embedded with a logic circuit. When the 3 port is used, the 1 port may serve as a differential write and readout port, and the 2 port may serve as a single ended readout dedicated port. ... Renesas Electronics Corporation

08/23/18 / #20180240749

Semiconductor device and manufacturing method thereof

The present invention provides a semiconductor device that reduces the variation of the resistance value of the conductive film. A semiconductor device according to an embodiment includes a semiconductor substrate, a wiring layer, a dielectric film, a metal film, and an interlayer dielectric film. ... Renesas Electronics Corporation

08/23/18 / #20180240700

Semiconductor device and method of manufacturing the same

Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. ... Renesas Electronics Corporation

08/23/18 / #20180240524

Semiconductor device

An object of the present disclosure is to provide a semiconductor having high security. A semiconductor device includes: a memory region having a plurality of memory cells capable of storing data; a read circuit capable of switching a reference current reading method of reading data by comparing current flowing a memory cell to be read in the memory region with a reference current, and a complementary reading method of reading data by comparing currents flowing in first and second memory cells in which complementary data to be read in the memory region is stored; a register setting a security state; a mode controller setting a mode; and a control circuit controlling the reference current reading method and the complementary reading method of reading the data in the read circuit on the basis of a signal of setting a mode from the mode controller and a value of the register.. ... Renesas Electronics Corporation

08/23/18 / #20180240514

Semiconductor device

There is provided, for example, a write assist circuit for controlling the voltage level of a memory cell power supply line coupled to an sram memory cell to be written in the write operation. The write assist circuit reduces the voltage level of the memory cell power supply line to a predetermined voltage level, in response to a write assist enable signal that is enabled in the write operation. ... Renesas Electronics Corporation

08/23/18 / #20180240513

Semiconductor storage device

A semiconductor storage device provided can increase a write margin and suppress increase of a chip area. The semiconductor storage device includes plural memory cells arranged in a matrix; plural bit-line pairs arranged corresponding to each column of the memory cells; a write driver circuit which transmits data to a bit-line pair of a selected column according to write data; and a write assist circuit which drives a bit line on a low potential side of the bit-line pair of a selected column to a negative voltage level. ... Renesas Electronics Corporation

08/16/18 / #20180234105

Semiconductor device

. . A semiconductor device includes: a plurality of input circuits each of which receives one of an analog signal and a digital signal, the input circuits being supplied a power supply; a selector that selects one of the input circuits; and an analog-to-digital (ad) converter that performs ad conversion of an analog signal input to the selected input circuit. After the selector selects one of the input circuits, the selector selects another of the input circuits. ... Renesas Electronics Corporation

08/16/18 / #20180234102

Analog to digital conversion circuit

An analog to digital (ad) converter includes an ad conversion circuit, and a calibration circuit that calibrates an output value of the ad conversion circuit. The calibration circuit includes a right-shift circuit that shifts an accumulated value of values obtained by removing a deviated value from a plurality of output values of the ad conversion circuit. ... Renesas Electronics Corporation

08/16/18 / #20180233592

Method for producing semiconductor device and semiconductor device

A semiconductor device having a memory cell includes: a first gate electrode formed on a semiconductor substrate via a first insulating film; a second gate electrode formed on the semiconductor substrate via the second insulating film having a charge storage portion inside so as to be adjacent to the first gate electrode; a third insulating film interposed between the first gate electrode and the second gate electrode; a first source/drain region formed on a main surface of the semiconductor substrate; a first silicide layer formed in contact with an upper surface of the first source/drain region; a second silicide layer formed in contact with an upper surface of the first gate electrode; and a third silicide layer formed in contact with an upper surface of the second gate electrode. The first to third silicide layers contain platinum.. ... Renesas Electronics Corporation

08/16/18 / #20180233590

Field effect transistor and multilayered epitaxial film for use in preparation of field effect transistor

In a group iii nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a gan-type field effect transistor, besides gan of a channel layer, a composition-modulated (composition-gradient) algan layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). ... Renesas Electronics Corporation

08/16/18 / #20180233587

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device includes providing a semiconductor substrate including a main surface, the main surface including a first area and a second area, which is different from the first area in a plan view, forming a first trench in the main surface of the semiconductor substrate in the first area, after the forming the first trench, forming a first insulating film on a side wall surface and a bottom face of the first trench, and after the forming the first insulating film, forming a first conductor film over the semiconductor substrate in the first area and a second area to embed a portion of the first conductor film into the first trench through the first insulating film.. . ... Renesas Electronics Corporation

08/16/18 / #20180233568

Semiconductor device and method for manufacturing the same

A semiconductor device with enhanced reliability in which a gate electrode for a trench-gate field effect transistor is formed through a gate insulating film in a trench made in a semiconductor substrate. The upper surface of the gate electrode is in a lower position than the upper surface of the semiconductor substrate in an area adjacent to the trench. ... Renesas Electronics Corporation

08/16/18 / #20180233461

Semiconductor device and authentication system

In order to realize a silicon puf of lower power consumption, a semiconductor device includes first and second mis transistors of the same conductive type in off-state coupled in series, as a puf element. The puf element outputs a signal of high level or low level depending on the potential of a connection node of the first and the second mis transistors. ... Renesas Electronics Corporation

08/16/18 / #20180233414

Method of manufacturing a semiconductor device with wider sidewall spacer for a high voltage misfet

An insulating film and another insulating film are formed over a semiconductor substrate in that order to cover first, second, and third gate electrodes. The another insulating film is etched back to form sidewall spacers over side surfaces of the insulating film. ... Renesas Electronics Corporation

08/16/18 / #20180233202

Semiconductor device

A memory cell of a split gate type monos memory is formed over a plate-shaped fin being a part of a semiconductor substrate. In a data erase operation, in a selected memory cell on which erasing is performed, a drain region is applied with 0 v, a memory gate electrode is applied with a positive voltage, and accordingly, erasing is performed by the fn mechanism. ... Renesas Electronics Corporation

08/16/18 / #20180233181

Semiconductor device

According to an embodiment, a semiconductor device includes a pre-charge transistor configured to supply a pre-charge voltage to a bit line, a sense amplifier configured to change a logic level of an output signal according to a result of a comparison between a drawing current of a storage element and a reference current, a clamp transistor disposed between the bit line bl and the sense amplifier, and a clamp voltage output transistor, in which a gate of the clamp voltage output transistor is connected to a gate of the clamp transistor, a source of the clamp voltage output transistor is connected to a back gate thereof, the pre-charge voltage is supplied to the source of the clamp voltage output transistor, a drain of the clamp voltage output transistor is connected to the gate thereof, and a ground voltage is supplied to a back gate of the clamp transistor.. . ... Renesas Electronics Corporation

08/09/18 / #20180226431

Method of manufacturing semiconductor device

. . Reliability of a semiconductor device is improved. Prepared is a substrate in which an insulating layer, a semiconductor layer, and an insulating film are laminated on a semiconductor substrate, and a device isolation region is embedded in a trench. ... Renesas Electronics Corporation

08/09/18 / #20180226362

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device includes preparing a wiring substrate including a first surface, a plurality of first terminals formed on the first surface, and a second surface opposite to the first surface, arranging a first adhesive on the first surface of the wiring substrate, and after the arranging of the first adhesive, mounting a first semiconductor chip, which includes a first front surface, a plurality of first front electrodes formed on the first front surface, a first rear surface opposite to the first front surface, a plurality of first rear electrodes formed on the first rear surface, and a plurality of through electrodes electrically connecting the plurality of first front electrodes to the plurality of first rear electrodes, on the first surface of the wiring substrate via the first adhesive.. . ... Renesas Electronics Corporation

08/09/18 / #20180226135

Multi-port memory, semiconductor device, and memory macro-cell capable of performing test in a distributed state

A multi-port memory includes a memory cell, first and second word lines, first and second bit lines, first and second address terminals, and an address control circuit. The address control circuit controls the first and second word lines independently of each other on the basis of address signals that are respectively supplied to the first and second address terminals in a normal operation mode, and activates both of the first and second word lines that are coupled to the same memory cell on the basis of the address signal that is supplied to one of the first and second address terminals in a disturb test mode.. ... Renesas Electronics Corporation

08/09/18 / #20180225193

Debug system and semiconductor device

When a program counter value during execution of a target program is an execution start address or less or is larger than the execution start address and is equal to or larger than minimum address among a plurality of addresses associated with a plurality of break points, a break circuit interrupts an execution of the target program, and during the interruption of the execution of the target program, and when the program counter value does not match with anyone of the plurality of break points, a debug control unit sets the program counter value as the execution start address to a first register, sets to a second register an address that is larger than the program counter value and is minimum among the plurality of break points as the minimum address, and resumes the execution of the target program from the execution start address.. . ... Renesas Electronics Corporation

08/09/18 / #20180225115

Signal processing circuit

Provided is a signal processing circuit occupying a small circuit area. A common arithmetic operation element is shared between a plurality of arithmetic operation sequence control units. ... Renesas Electronics Corporation

08/09/18 / #20180225094

Random number generating device and random number generating method

To generate a random number with a larger number of bits and with reduced predictability, a random number generating device 1 includes a sensor 2 that measures a physical phenomenon, a seed value generator 3, and a random number generator 4. The seed value generator 3 generates a seed value for random number generation by using n bits (n is an integer from 1 to n) of an n-bit (n is an integer of 1 or more) digital value indicating a measured value of the sensor 2. ... Renesas Electronics Corporation

08/09/18 / #20180224495

Electric-current sensing device, load driving system, and method for manufacturing electric-current sensing device

There are provided an electric-current sensing device capable of detecting an electric current with high accuracy, a load driving system, and a method for manufacturing the electric-current sensing device. According to one embodiment, the electric-current sensing device includes a sense igbt through which an electric current proportional to an electric current flowing through a main igbt flows. ... Renesas Electronics Corporation

08/09/18 / #20180222472

Control system

A control system includes an information obtaining apparatus, a network, and a control apparatus. The information obtaining apparatus includes a distance information obtaining unit configured to obtain a distance information indicating a distance to an object and a transmission unit configured to transmit the distance information obtained by the distance information obtaining unit. ... Renesas Electronics Corporation

08/02/18 / #20180220093

Image sensor

. . According to one exemplary embodiment, an image sensor includes a first chip a and a second chip b configured to transmit and receive signals to and from the first chip through a micro-bump, the first chip being stacked on top of the second chip, wherein on the first chip, pixel circuits 31-3n are arranged in a lattice structure, each of the pixel circuits including a photoelectric conversion element 41, a transfer transistor 42, a reset transistor 43, and an amplification transistor 44, and on the second chip, at least an input stage circuit comp of an analog-to-digital converter circuit configured to convert a dark level signal and an imaging signal output from the pixel circuits 31-3n into a digital value is formed, and the number of input stage circuits comp is at least two times the number of lines of the pixel circuits.. . ... Renesas Electronics Corporation

08/02/18 / #20180219541

Semiconductor device

A semiconductor device including a bus master that receives a clock; a first bus slave that receives a first slave clock and has a first number of waits, and a second bus slave that receives a second slave clock and has a second number of waits, wherein the second number of waits is higher than the first number of waits, and wherein a phase difference between the clock and the first slave clock is higher than a phase difference between the clock and the second slave clock.. . ... Renesas Electronics Corporation

08/02/18 / #20180219540

Semiconductor apparatus and radio communication apparatus

A semiconductor apparatus, includes a common mode detector circuit that receives alternating current (ac) signals in a common mode.. . ... Renesas Electronics Corporation

08/02/18 / #20180219089

Semiconductor device and manufacturing method of semiconductor device

A mesa portion of a semiconductor device, which includes a channel base layer formed of a first nitride semiconductor layer, a channel layer formed of a second nitride semiconductor layer, a barrier layer formed of a third nitride semiconductor layer, a mesa-type fourth nitride semiconductor layer, a gate insulating film that covers the mesa portion, and a gate electrode formed over the gate insulating film, is used as a co-doped layer. The mesa portion is used as the co-doped layer, so that interface charges generated at an interface between the gate insulating film and the mesa portion can be cancelled by p-type impurity or n-type impurity in the co-doped layer and a threshold potential can be improved. ... Renesas Electronics Corporation

08/02/18 / #20180219016

Semiconductor device

A semiconductor device, includes: a semiconductor substrate having a first well region; an insulating layer formed on a first portion of the semiconductor substrate, and contacted with the first well region; a semiconductor layer formed on the insulating layer; an element isolation region reaching to an inside of the first well region, in cross-section view; a first gate electrode layer formed on a first portion of the semiconductor layer via a first gate insulating film; a second gate electrode layer formed on a second portion of the semiconductor layer via a second gate insulating film, and formed on a first portion of the element isolation region; an interlayer insulating film covering the first gate electrode layer, the second gate electrode layer and a second portion of the element isolation region; and a first plug conductor layer formed in the interlayer insulating film.. . ... Renesas Electronics Corporation

08/02/18 / #20180218969

Semiconductor device

The semiconductor device of the present invention is a semiconductor device in which a first semiconductor chip including a first field effect transistor for a high-side switch, a second semiconductor chip including a second field effect transistor for a low-side switch, and a third semiconductor chip including a circuit that controls each of the first and second semiconductor chips are sealed with a sealing portion. A lead electrically connected to a pad of the first semiconductor chip for a source of the first field effect transistor and a lead electrically connected to a back-surface electrode of the second semiconductor chip for a drain of the second field effect transistor are disposed on the same side of the sealing portion in a plan view.. ... Renesas Electronics Corporation

08/02/18 / #20180217505

Method for inspecting mask pattern, method for manufacturing mask, and method for manufacturing semiconductor device

To shorten a time required for a risk degree determination in a lithography compliance check. When each detection point extracted in a lithography compliance check is categorized, a vertically long detection area and a horizontally long detection area both centering on the detection point are provided for each detection point. ... Renesas Electronics Corporation

08/02/18 / #20180217206

Voltage monitoring module and voltage monitoring system

A voltage monitoring module including a first input terminal coupled to a high-voltage-side terminal of a battery cell through a first path including an external resistor, a first terminal coupled to the high-voltage-side terminal of the battery cell through a second path; a first switch coupled to the first input terminal, a second switch coupled to the first terminal; a second input terminal and a second terminal coupled to a low-voltage-side terminal of the battery cell, a third switch that is coupled to the second input terminal; a fourth switch that is coupled to the second terminal, and a control circuit that controls on/off of the first through fourth switches, wherein an element that suppresses fluctuation of a voltage input to the first switch through the first input terminal that is coupled between the first switch and a fixed voltage.. . ... Renesas Electronics Corporation

08/02/18 / #20180217203

Manufacturing method and program of semiconductor device

A semiconductor device manufacturing method includes forming a plurality of semiconductor chips on a main surface of a semiconductor wafer, electrically testing each of the semiconductor chips, dicing the semiconductor wafer into individual semiconductor chips and assembling each of the semiconductor chips into a package to be a semiconductor device, subjecting the packages to a burn-in test, determining whether each of the semiconductor chips requires the burn-in test to be performed, and generating a determination model for determining whether the semiconductor chips require the burn-in test to be performed.. . ... Renesas Electronics Corporation

07/26/18 / #20180213352

Location search method using a phone in multiple locations

A location search method using a mobile device in multiple locations. In one embodiment of the method, the mobile device receives a first radio frequency (rf) signal transmitted by a first device while the mobile device is at a first geographical location. ... Renesas Electronics Corporation

07/26/18 / #20180213230

Video encoder and method of operating the same

The present invention provides a video encoder and a method of operating the video encoder to implement high-precision bit rate control by reducing the risk of overflow of an intermediate buffer coupled between a quantizer and an encoding section. The intermediate buffer supplies a selection control signal indicative of whether the amount of stored data is large or small to a selector. ... Renesas Electronics Corporation

07/26/18 / #20180212856

Reception device and clock generating method

An object of the present invention is to generate a clock also before reception of a packet in a reception device. A reception device has: a storage unit storing a true time-stamp included in a received packet including audio data and the true time-stamp expressing reproduction time of the audio data; a timer counting time; a dummy time-stamp generation unit generating a dummy time-stamp as a false time-stamp; a comparator comparing time based on the true time-stamp stored in the storage unit or the dummy time-stamp and time indicated by the timer; and a clock generation unit generating a clock in accordance with a comparison result of the comparator. ... Renesas Electronics Corporation

07/26/18 / #20180212822

In-vehicle communication system, domain master, and firmware update method

It is possible to update firmware of domain masters during travelling. An in-vehicle communication system includes a plurality of domain masters, and a redundant domain master configured to be able to perform alternative operations of the plurality of domain masters. ... Renesas Electronics Corporation

07/26/18 / #20180212629

Data processing apparatus

A data processing apparatus includes a memory, a processor which outputs write data when making a write request to the memory, and which inputs read data when making a read request to the memory, a parity generating circuit which generates a parity comprising a plurality of parity bits from the write data, the parity being written with the write data into the memory, and a parity check circuit which is coupled between the memory and the processor, and which detects a presence or absence of an error of one bit or two bits in the read data and the parity read from the memory, wherein the parity generating circuit generates the parity so that at least one of a first write data bit and a second write data bit included in the write data contributes to generation of at least two parity bits.. . ... Renesas Electronics Corporation

07/26/18 / #20180211956

Semiconductor device

Data hold time is controlled without excessively increasing a circuit area. A semiconductor device includes a data buffer and a flip-flop formed of fin. ... Renesas Electronics Corporation

07/26/18 / #20180211949

Semiconductor device

A semiconductor device includes a mos transistor which is coupled between two terminals and discharges current which flows caused by generation of static electricity and a diode which is coupled between a back gate of the mos transistor and one of the terminal and has a polarity which is reversed to the polarity of a parasitic diode which is formed between the back gate and a source of the mos transistor.. . ... Renesas Electronics Corporation

07/19/18 / #20180205563

Semiconductor device

A semiconductor device includes a first field effect transistor and a second field effect transistor which are respectively coupled to gate electrodes. An insulation property of a gate insulating film of the first field effect transistor is broken down. ... Renesas Electronics Corporation

07/19/18 / #20180205342

Motor driving method, battery pack and semiconductor device

The present invention provides a motor driving method, a battery pack, and a semiconductor device capable of variable-controlling a bus voltage from a battery pack. A battery pack outputting a bus voltage to a positive voltage node using a negative voltage node as a reference, an inverter unit converting the bus voltage to ac voltage by switching according to a pwm signal and driving a motor, and a motor control unit generating the pwm signal are used. ... Renesas Electronics Corporation

07/19/18 / #20180205225

Semiconductor device

Provided is a semiconductor device making it possible to promote area reduction while maintaining esd resistance. The semiconductor device includes a power wire, a ground wire and a protection circuit provided between the power wire and the ground wire so as to cope with electrostatic discharge. ... Renesas Electronics Corporation

07/19/18 / #20180204943

Semiconductor device manufacturing method and semiconductor device

In order to improve the performance of a semiconductor device, a p type impurity is ion implanted into an area of an n type semiconductor film that is epitaxially grown over a p type semiconductor substrate, and the p type impurity is not ion implanted into an area of the n type semiconductor film, which is adjacent to the area in which the p type impurity is ion implanted. In this way, a p− type drift layer comprised of the area in which the p type impurity is introduced, as well as an n− type semiconductor region comprised of the area in which the p type impurity is not introduced are formed.. ... Renesas Electronics Corporation

07/19/18 / #20180204847

Method for manufacturing a semiconductor device

The reliability of a semiconductor device is improved. A control gate electrode and a memory gate electrode for memory cell of a nonvolatile memory, a first gate electrode and a dummy gate electrode for peripheral circuit are formed. ... Renesas Electronics Corporation

07/19/18 / #20180204827

Electronic device and semiconductor device

An electronic device includes a first wiring substrate and a semiconductor device mounted on the first wiring substrate. A plurality of first semiconductor chips and a second semiconductor chip which controls each of the plurality of first semiconductor chips are mounted side by side on a second wiring substrate of the semiconductor device. ... Renesas Electronics Corporation

07/19/18 / #20180204790

Semiconductor device and manufacturing method thereof

A manufacturing method of a semiconductor device includes preparing a chip mounting part and a lead frame including leads arranged around the chip mounting part, mounting over the chip mounting part a first semiconductor chip including a first top surface in a quadrangular shape, a first back surface opposite to the first top surface, first pads arranged over the first top surface, and a first inductor that is provided on a side of first top surface and is electrically coupled to the first pads, and mounting over the first semiconductor chip, through a first insulating film, a second semiconductor chip including a second top surface in a quadrangular shape, a second back surface opposite to the second top surface, second pads arranged over the second top surface, and a second inductor that is provided on a side of the second top surface.. . ... Renesas Electronics Corporation

07/19/18 / #20180204788

Semiconductor device and method for manufacturing the same

A semiconductor device pkg includes a semiconductor chip cp, a lead ld3, a wire bw5 electrically connecting a pad electrode pd2 of the semiconductor chip cp to the lead ld3, a wire bw3 electrically connecting a pad electrode pd3 of the semiconductor chip cp to the lead ld3, and a sealing body sealing them with a resin. The semiconductor chip cp includes internal circuits 5b and 5c, and a switch circuit unit sw. ... Renesas Electronics Corporation

07/19/18 / #20180204613

Semiconductor integrated circuit device

There is provided a semiconductor integrated circuit device that can generate a unique id with the suppression of overhead. When a unique id is generated, the potential of a word line of a memory cell in an sram is raised above the power supply voltage of the sram, and then lowered below the power supply voltage of the sram. ... Renesas Electronics Corporation

07/19/18 / #20180204612

Semiconductor device

A semiconductor device includes: a first power source line for supplying a first voltage; a second power source line for supplying a second voltage; a memory circuit coupled with the first and second power source lines; a first switch which electrically coupling the first power source line with the second power source line and electrically decoupling the first power source line from the second power source line, in response to a control signal; a second switch which electrically coupling the first power source line with the second power source line and electrically decoupling the first power source line from the second power source line, in response to the control signal, wherein a memory circuit includes a memory cell array and a peripheral circuit, wherein a memory cell array includes a plurality of memory cells, the memory cells coupled with the second power source line.. . ... Renesas Electronics Corporation

07/19/18 / #20180202945

Semiconductor manufacturing apparatus and semiconductor manufacturing method

A semiconductor manufacturing apparatus includes: an electrostatic chuck that is installed in a chamber and over which a semiconductor wafer to be subjected to plasma processing is to be mounted; and an observation device for observing a change in a signal waveform occurring in the electrostatic chuck during the plasma processing. The observation device determines abnormal discharge in a processing chamber based on a change pattern of the signal waveform.. ... Renesas Electronics Corporation

07/12/18 / #20180198001

Semiconductor device and a manufacturing method thereof

In a semiconductor device including a split gate type monos memory, and a trench capacitor element having an upper electrode partially embedded in trenches formed in the main surface of a semiconductor substrate, merged therein, the flatness of the top surface of the upper electrode embedded in the trench is improved. The polysilicon film formed over the semiconductor substrate to form a control gate electrode forming a memory cell of the monos memory is embedded in the trenches formed in the main surface of the semiconductor substrate in a capacitor element formation region, thereby to form the upper electrode including the polysilicon film in the trenches.. ... Renesas Electronics Corporation

07/12/18 / #20180197850

Semiconductor integrated circuit device

A semiconductor integrated circuit device with a “pad on i/o cell” structure in which a pad lead part is disposed almost in the center of an i/o part so as to reduce the chip layout area. In the i/o part, a transistor lies nearest to the periphery of the semiconductor chip. ... Renesas Electronics Corporation

07/12/18 / #20180197825

Semiconductor device manufacturing method and semiconductor wafer

A semiconductor wafer provided with a pseudo chip between a product chip and a pattern prohibiting region is prepared. With the edge portion of the semiconductor wafer left, the bottom surface of the inner semiconductor substrate is ground, and then, the semiconductor wafer is cut in a ring shape to remove the edge portion. ... Renesas Electronics Corporation

07/12/18 / #20180197768

Semiconductor device and method of manufacturing same

To provide a semiconductor device having improved performance. The semiconductor device has a first insulating film formed on the main surface of a semiconductor substrate and a second insulating film formed on the first insulating film. ... Renesas Electronics Corporation

07/12/18 / #20180197753

Semiconductor device and its manufacturing method

The present invention makes it possible to improve the reliability of a semiconductor device. The semiconductor device has, over a semiconductor substrate, a pad electrode formed at the uppermost layer of a plurality of wiring layers, a surface protective film having an opening over the pad electrode, a redistribution line being formed over the surface protective film and having an upper surface and a side surface, a sidewall barrier film comprising an insulating film covering the side surface and exposing the upper surface of the redistribution line, and a cap metallic film covering the upper surface of the redistribution line. ... Renesas Electronics Corporation

07/12/18 / #20180197609

Flash memory

In order to reduce the manufacturing cost, a flash memory includes a memory cell array formed by a plurality of memory cells arranged in a matrix shape; a plurality of word lines provided in each column of the memory cell array; a first word line driver that outputs a first voltage group to each of the word lines; and a second word line driver that outputs a second voltage group to each of the word lines together with the first word line driver.. . ... Renesas Electronics Corporation

07/12/18 / #20180196956

Security architecture and method

A security architecture and method for a system on a chip or a microcontroller. The method in one embodiment includes a first central processing unit (cpu) specifying a first address. ... Renesas Electronics Corporation

07/12/18 / #20180196675

Processor and instruction code generation device

In a processor including an instruction prefetch buffer to prefetch a group of instructions with continuous addresses from a memory, the probability of occurrence of the situation where a bus is occupied by the instruction prefetch more than necessary is reduced. The processor includes an instruction fetch address generator which controls the address and amount of the instruction to be prefetched to the instruction prefetch buffer. ... Renesas Electronics Corporation

07/12/18 / #20180196500

Semiconductor device with power on reset circuitry

A semiconductor device which makes it possible to reduce a wasteful standby time at power-on is provided. In this semiconductor device, a reset of an internal circuit is canceled as described below. ... Renesas Electronics Corporation

07/05/18 / #20180190806

Semiconductor device and method of manufacturing same

To achieve a semiconductor device equipped with a low on voltage and high load short circuit withstand trench gate igbt. A collector region on a back surface of a semiconductor substrate is comprised of a relatively lightly-doped p+ type first collector region and a relatively heavily-doped p++ type second collector region. ... Renesas Electronics Corporation

06/28/18 / #20180184080

Image processor and semiconductor device

. . . . . . . . An object of the present invention is to detect a failure of a camera input in a system including a camera or a video transmission path (camera input). An image processor includes a hash derivation circuit having a computing unit that calculates hash values on an input screen and a storage circuit that stores the hash values. ... Renesas Electronics Corporation

06/28/18 / #20180184005

Camera controller, and a calibration method for a correction lens

In open-loop control, displacement of a correction lens cannot be detected. Therefore, the displacement of the correction lens cannot be appropriately corrected. ... Renesas Electronics Corporation

06/28/18 / #20180184004

Method for calibrating driving amount of actuator configured to correct blurring of image taken by camera

A method for calibrating a driving amount of an actuator configured to correct blurring of an image taken by a camera attached to a device includes: taking an image of a mark by a camera to generate a first image, the mark reflecting a predetermined posture of the device; detecting a tilt of the mark in the first image; and based on the tilt of the mark, correcting the driving amount of the actuator that is predetermined according to a sensing result of a sensor for sensing a change in a posture of the device.. . ... Renesas Electronics Corporation

06/28/18 / #20180183826

Design support system

A method of and a design support system for generating a risk profile for at least part of an electronic system which is vulnerable to an attack originating from outside the system are described. The method comprises receiving an attack scenario identifying an attack and a potential target for the attack within the at least part of the system, receiving a selection, from a user, of a security analysis model for assessing the attack, receiving information identifying a selected security mechanism appliable in the at least part of an electronic system and generating a risk profile in dependence upon the security mechanism.. ... Renesas Electronics Corporation

06/28/18 / #20180183432

Semiconductor apparatus and inverter system

The present disclosure attempts to improve performance of a semiconductor apparatus including a power transistor such as an igbt. In a semiconductor apparatus, an igbt module 110 includes igbt elements swa and swb connected in parallel to each other, a resistor r1a connected to a gate terminal of the igbt element swa, and a diode d1a connected in parallel to the resistor r1a. ... Renesas Electronics Corporation

06/28/18 / #20180183411

Semiconductor device

To provide an inexpensive semiconductor device capable of suppressing the influence by crosstalk. A semiconductor device includes a signal wiring disposed in an organic interposer, an output circuit which is coupled to a first end of the signal wiring and which sets an impedance so as to generate a reflected wave antiphase to a waveform transmitted to the first end and periodically outputs data, and an input circuit which is coupled to a second end of the signal wiring and sets an impedance so as to generate a reflected wave of the same phase as a waveform transmitted to the second end. ... Renesas Electronics Corporation

06/28/18 / #20180183378

Semiconductor device and power conversion device

To solve the problem of multi-pulse control in which the load of the control software is increased and further switching/timing adjustment is required, a semiconductor device includes a control unit including a cpu and a memory, a pwm output circuit for controlling the driver ic to drive the power semiconductor device, a current detection circuit for detecting the motor current, and an angle detection circuit for detecting the angle of the motor. The pwm output circuit includes a square wave generator circuit to generate a square wave based on the angle of the angle detection circuit as well as the base square wave information.. ... Renesas Electronics Corporation

06/28/18 / #20180183365

Motor driving device and motor system

A motor driving device and a motor system that can reduce a torque ripple of a motor are provided. The current control loop detects a drive current of the motor, detects an error between the detected value of the drive current and a current indication value as a target value of the drive current, and determines the duty of the pwm signal reflecting the error concerned. ... Renesas Electronics Corporation

06/28/18 / #20180182890

Semiconductor device and method for manufacturing the same

A semiconductor device according to one embodiment includes a semiconductor substrate having a first surface, an insulating isolation film disposed at the first surface, and a gate electrode. The semiconductor substrate has a source region, a drain region, a drift region, and a body region. ... Renesas Electronics Corporation

06/28/18 / #20180182875

Trench gate igbt

A high-performance trench gate igbt is provided. A trench gate igbt according to one embodiment includes: a semiconductor substrate (11); a channel layer (15) provided on the semiconductor substrate (11); two floating p-type layer (12) provided on both sides of the channel layer 15, the floating p-type layers (12) being deeper than the channel layer (15); two emitter trenches (13) disposed between the two floating p-type layers (12), the emitter trenches (13) being respectively in contact with the floating p-type layers (12); at least two gate trenches (14) disposed between the two emitter trenches (13); and a source diffusion layer (19) disposed between the two gate trenches 14, the source diffusion layer (19) being in contact with each of the gate trenches (14).. ... Renesas Electronics Corporation

06/28/18 / #20180182855

Semiconductor device and method for manufacturing the same

Characteristics of a semiconductor device are improved. An active region including a mos transistor is structured such that the active region includes, in a plan view, a first side extending in x direction, a second side opposing the first side, an extension part projecting from the first side, and a cut-away portion recessed from the second side. ... Renesas Electronics Corporation

06/28/18 / #20180182850

Semiconductor device and method of manufacturing thereof

In a semiconductor device, a width of a second epitaxial layer is greater than a width of a first epitaxial layer, and a thickness of an end portion of the second epitaxial layer, which is in contact with an element isolation portion, is smaller than a thickness of an end portion of the first epitaxial layer, which is in contact with the element isolation portion, and a second shortest distance between the element isolation portion and a second plug is greater than a first shortest distance between the element isolation portion and a first plug.. . ... Renesas Electronics Corporation

06/28/18 / #20180182790

Method for manufacturing a semiconductor device

The pixel characteristics are prevented from being degraded due to diffusion of electrons and fe (iron) from the surface of an element isolation trench formed in the top surface of a semiconductor substrate into a photodiode forming the pixel of an image sensing element. Further, oxygen is prevented from being diffused from a boron oxide film formed at the surface of the element isolation trench into the photodiode. ... Renesas Electronics Corporation

06/28/18 / #20180182774

Semiconductor device and method of manufacturing the semiconductor device

Characteristics of a semiconductor device having a nonvolatile memory are improved. A high dielectric constant film is provided on an insulating film between a memory gate electrode and a fin as components of a nonvolatile memory. ... Renesas Electronics Corporation

06/28/18 / #20180182768

Manufacturing method of semiconductor device and semiconductor device

After a dummy control gate electrode and a memory gate electrode are formed and an interlayer insulating film is formed so as to cover the gate electrodes, the interlayer insulating film is polished to expose the dummy control gate electrode and the memory gate electrode. Thereafter, the dummy control gate electrode is removed by etching, and then a control gate electrode is formed in a trench which is a region from which the dummy control gate electrode has been removed. ... Renesas Electronics Corporation

06/28/18 / #20180182767

Semiconductor device and method for manufacturing the same

A semiconductor device in which the cell size is small and disturbance in reading operation is suppressed, and a method for manufacturing the semiconductor device. A first memory cell has a first memory transistor. ... Renesas Electronics Corporation

06/28/18 / #20180182751

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device of the present invention includes, in a region 1c, a top electrode made by a semiconductor layer of an soi substrate, a capacitive insulating film made by an insulating layer, a bottom electrode made by a supporting board, and a lead part (a high-concentration impurity region of an n type) of the bottom electrode coupled to the supporting board. An soi transistor in a region 1b is formed over a main surface of the semiconductor layer over the insulating layer as a thin film, and threshold voltage can be adjusted by applying a voltage to a well arranged on the rear face side of the insulating layer.. ... Renesas Electronics Corporation

06/28/18 / #20180182731

Method of manufacturing semiconductor device

As one embodiment, a method of manufacturing a semiconductor device includes the following steps. That is, the method of manufacturing a semiconductor device includes a first step of applying ultrasonic waves to a ball portion of a first wire in contact with a first electrode of the semiconductor chip while pressing the ball portion with a first load. ... Renesas Electronics Corporation

06/28/18 / #20180182719

Semiconductor device

A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. ... Renesas Electronics Corporation

06/28/18 / #20180182706

Semiconductor device

A semiconductor device includes an insulating film formed to cover an electric fuse (ef1), an insulating film (il1), an insulating film (il2), an electric fuse (ef1), an insulating film (il1), and an insulating film (il2). The electric fuse (ef1) includes a fuse-blowing portion (fc1), a first pad portion (pd1), and a second pad portion (pd2). ... Renesas Electronics Corporation

06/28/18 / #20180182700

Semiconductor device

A semiconductor device which provides improved reliability. The semiconductor device includes: a wiring substrate having a first surface and a second surface opposite to the first surface; a chip condenser built in the wiring substrate, having a first electrode and a second electrode; a first terminal and a second terminal disposed on the first surface; and a third terminal disposed on the second surface. ... Renesas Electronics Corporation

06/28/18 / #20180182692

Semiconductor device and manufacturing method thereof

An improvement is achieved in the reliability of a semiconductor device. A sip includes an analog chip, a microcomputer chip having a main surface smaller in area than a main surface of the analog chip, a die pad over which the analog chip and the microcomputer chip are mounted, and a plurality of leads arranged so as to surround the die pad. ... Renesas Electronics Corporation

06/28/18 / #20180182644

Method for manufacturing a semiconductor device

A compact and high-reliability semiconductor device is implemented. The bonding wires situated in the vicinity of a gate, and the bonding wires situated in the vicinity of a vent facing to the gate across the center of a semiconductor chip in a molding step have a loop shape falling inwardly of the semiconductor chip, have a weaker pulling force (tension) than those of other bonding wires, and are loosely stretched with a margin. ... Renesas Electronics Corporation

06/28/18 / #20180182631

Semiconductor device and method of manufacturing the same

In a split-gate-type monos memory, increase in a defective rate due to variation in a gate length of a memory gate electrode is prevented, and reliability of a semiconductor device is improved. A first dry etching having a high anisotropic property but a low selection ratio relative to silicon oxide is performed to a silicon film, and then, a second dry etching having a low anisotropic property but a high selection ratio relative to silicon oxide is performed thereto, so that a control gate electrode composed of the silicon film is formed, and then, a sidewall-shaped memory gate electrode is formed on a side surface of the control gate electrode. ... Renesas Electronics Corporation

06/28/18 / #20180182125

Method of determining focus lens position, control program for making computer execute the method, and imaging device

A method of determining a position of a focus lens includes the steps of detecting luminance values corresponding to a plurality of imaging elements which detect light via a focus lens while moving the focus lens, calculating a contrast value for evaluation of a focused state of a subject image on the basis of the detected luminance values corresponding to the imaging elements, specifying the largest luminance value in the detected luminance values corresponding to the imaging elements, specifying a range in which the largest luminance value is not less than a value which is determined in advance in a moving range of the focus lens and determining the position of the focus lens on the basis of the contrast value in the specified range of the position of the focus lens.. . ... Renesas Electronics Corporation

06/28/18 / #20180181726

License managing method, semiconductor device suitable for license management and license managing system

A license managing method including an execution device that executes software and a software storage device coupled to the execution device further includes a license storage device that stores license information indicating the number of licenses for permitting a license of the software, and the license managing method includes the step of license-managing of controlling storage of the software to be downloaded into the software storage device or execution of the software by the execution device based on the license information stored in the license storage device when the software whose license permission is required is downloaded.. . ... Renesas Electronics Corporation

06/28/18 / #20180181696

Element model and process design kit

According to an embodiment, element models include a first transistor model, a second transistor model, and a variable resistor model. The first transistor model simulates a characteristic of a selection gate transistor whose channel resistance is changed by a selection gate voltage applied to a selection gate. ... Renesas Electronics Corporation

06/28/18 / #20180181493

Cache memory device and semiconductor device

A cache memory device includes: data memory that stores cache data corresponding to data in main memory; tag memory that stores tag information to identify the cache data; an address estimation unit that estimates a look-ahead address to be accessed next; a cache hit determination unit that performs cache hit determination on the look-ahead address, based on the stored tag information; and an access controller that accesses the data memory or the main memory based on the retained cache hit determination result in response to a next access.. . ... Renesas Electronics Corporation

06/28/18 / #20180181457

Semiconductor device

The aim of the present disclosure is to provide a watchdog timer that can perform a fault diagnosis during the actual use of a semiconductor device. In a semiconductor device provided with a watchdog timer, the watchdog timer includes a counter; a counter control circuit that changes a count value of the counter to a desired value in the refresh period of the count value; and a fault diagnosis module. ... Renesas Electronics Corporation

06/28/18 / #20180181331

Semiconductor device, security process execution device, and security process execution method

It is possible to prevent a central processing unit and a security processing unit from accessing of a non-volatile memory at the same time. A data flash 13 includes a secure area 31 and a user area 32. ... Renesas Electronics Corporation

06/28/18 / #20180181170

Semiconductor device, operating condition controlling method, and non-transitory computer readable medium

An operating condition is controlled from viewpoints both processing capacity and power consumption. A cpu 11 includes, for example, a plurality of cpu cores 11a to 11d, and configured to such that an operating condition can be varied. ... Renesas Electronics Corporation

06/28/18 / #20180180827

Semiconductor device and manufacturing method thereof

A si photonics device includes: a first semiconductor chip; a second semiconductor chip having a laser diode and mounted on the first semiconductor chip; a third semiconductor chip taking in a laser beam emitted from the laser diode and mounted on the first semiconductor chip; and a resin layer disposed on the first semiconductor chip so as to face the second semiconductor chip. Further, the si photonics device has: a bump electrode connecting the second semiconductor chip and an upper layer electrode pad provided on the resin layer of the first semiconductor chip; and a bump electrode connecting the first semiconductor chip and the third semiconductor chip, and the second semiconductor chip is mounted on the first semiconductor chip via the resin layer.. ... Renesas Electronics Corporation

06/21/18 / #20180176491

Image pickup device

In a related image pickup device, there is a problem that an effect of noises that are superimposed on a signal on a signal reading path from a pixel circuit cannot be reduced. According to an embodiment, an image pickup device includes a first sampling-and-holding circuit 51 configured to sample a signal output from a pixel circuit, a buffer circuit 52 configured to amplify a signal held in the first sampling-and-holding circuit 51, and a second sampling-and-holding circuit 53 configured to sample a signal output from the buffer circuit 52, in which the image pickup device obtains a digital value corresponding to a signal output from the pixel circuit by passing the signal output from the pixel circuit through the first sampling-and-holding circuit 51, the buffer circuit 52, and the second sampling-and-holding circuit 53 in this order, and thereby transmitting the signal to an analog/digital conversion circuit 24.. ... Renesas Electronics Corporation

06/21/18 / #20180175866

Semiconductor device and control system

An abnormal rise of oscillation frequencies of pll circuits in conventional semiconductor devices has been an inevitable problem. This semiconductor device includes a phase difference detection circuit, a loop filter, and a voltage controlled oscillator that outputs an output clock signal. ... Renesas Electronics Corporation

06/21/18 / #20180175589

Semiconductor laser, light source unit, communication system, and wavelength division multiplexing optical communication system

Provided is a distributed feed back semiconductor laser including a phase shift part capable of obtaining an excellent single-mode yield and a high luminous efficiency. A diffraction grating (105) is formed so as to extend in a guiding direction of a resonator between an end surface at which a low reflective film (111) is formed and an end surface at which a high reflective film (110) is formed. ... Renesas Electronics Corporation

06/21/18 / #20180175192

Semiconductor device and method for manufacturing the same

A recessed portion is formed in a top surface of an isolation insulation film filling an isolation trench between a p+ source region and a p+ drain region. A p− drift region is located below the isolation trench and connected to the p+ drain region. ... Renesas Electronics Corporation

06/21/18 / #20180175136

Inductor element, inductor element manufacturing method, and semiconductor device with inductor element mounted thereon

An inductor element is formed in a multiple layer lead structure including a lead, an insulative layer that insulates leads above and below, and a via provided in the insulative layer and connecting leads above and below wherein lead layers are multiply laminated layers, characterized in that: at least a portion of at least a pair of vertically adjacent leads are coiled leads; the coiled leads are connected in series, wherein current directions of vertically adjacent coiled leads are the same by a via provided on an end portion thereof, and form a serial inductance; and an inter-lead capacitance of the vertically adjacent coiled leads is larger than an inter-lead capacitance between other coiled leads formed in the same lead layer.. . ... Renesas Electronics Corporation

06/21/18 / #20180175067

Semiconductor device and a method of manufacturing the same

A semiconductor device manufacturing technique which allows reduction of semiconductor chip size. First, a pad and other wires are formed over an insulating film. ... Renesas Electronics Corporation

06/21/18 / #20180175014

Semiconductor device

In a semiconductor device (sd), plate-shaped upper electrodes (uel) are formed on a lower electrode (lel) with a dielectric film (dec) interposed therebetween. The lower electrode (lel), the dielectric film (dec), and the upper electrodes (uel) constitute mim capacitors (mca). ... Renesas Electronics Corporation

06/21/18 / #20180174929

Semiconductor manufacturing device, semiconductor manufacturing method and semiconductor device

According to one embodiment, provided is a semiconductor manufacturing device including a probe card arranged to face a semiconductor chip to be measured, wherein the probe card has: a test probe that obtains the electric characteristics of the semiconductor chip by being brought into contact with a test pad; a temperature extraction probe that extracts temperature information of the semiconductor chip by being brought into contact with a temperature extraction pad that is coupled to a temperature sensor; a contact member that is brought into contact with the upper surface of the semiconductor chip to absorb the heat of the semiconductor chip; a driving unit that moves the contact member so as to allow the contact member to be brought into contact with or to be separated from the upper surface; and a control unit that controls the driving of the driving unit on the basis of the temperature information.. . ... Renesas Electronics Corporation

06/21/18 / #20180174900

Semiconductor device having a discontinued part between a first insulating film and second insulating film

A semiconductor device, in which an increase in the size of a product can be suppressed and a withstand voltage between wiring layers can be improved, and a manufacturing method thereof are provided. A discontinued part, in which the interface between an interlayer insulating film and a passivation film is discontinued, is formed between a first wiring layer and a second wiring layer that are adjacent to each other with a space therebetween. ... Renesas Electronics Corporation

06/21/18 / #20180173898

Data processing apparatus and access control method

According to one embodiment, a data processing apparatus includes an access controller configured to control access by a cpu to a processor. The access controller selects permission configuration information and an identifier table to be used for the access control using processor selection information output from the cpu, determines as intermediate identifier mid that corresponds to an access request identifier spid output from the cpu using the selected identifier table, and determines accessibility of the cpu to the processor using the selected permission configuration information and the determined intermediate identifier mid.. ... Renesas Electronics Corporation

06/21/18 / #20180173819

Semiconductor circuit design device

A logic model of a nonvolatile memory device is commonly used in high order synthesis and a logic simulation. Further, the logic model of the nonvolatile memory device divides a one-time rewriting request area of the nonvolatile memory device into a plurality of areas, and rewrites each of the divided areas in a time division manner.. ... Renesas Electronics Corporation

06/21/18 / #20180173290

Data processing system and data processing method

A data processing system includes: a first data processing apparatus configured to execute first processing on input data; and a second data processing apparatus configured to migrate the first processing from the first data processing apparatus and execute the first processing, in which the second data processing apparatus snoops the input data input to the first data processing apparatus when it migrates the first processing from the first data processing apparatus.. . ... Renesas Electronics Corporation

06/21/18 / #20180172758

Voltage monitoring circuit and semiconductor device

A voltage monitoring circuit and a semiconductor device that can reduce time required for self-diagnosis are provided. A selection circuit selects one of a determination threshold voltage for normal use, a determination threshold voltage for self-diagnosis, and a determination threshold voltage for boost having a potential difference larger than that of the determination threshold voltage for normal use. ... Renesas Electronics Corporation

06/21/18 / #20180172523

Voltage detecting device, temperature detecting device having the same, voltage detecting method, and temperature detecting method having the same

According to an embodiment, a voltage detecting device includes: a first operational amplifier having an inversion input terminal to which first detection voltage is supplied and a non-inversion input terminal to which voltage of an external output terminal is supplied; a first transistor provided between the external output terminal and a reference voltage terminal and having a gate to which an output voltage of the first operational amplifier is applied; a second operational amplifier having an inversion input terminal to which second detection voltage is supplied and a non-inversion input terminal to which the voltage of the external output terminal is supplied; and a second transistor provided between the external output terminal and the reference voltage terminal and having a gate to which output voltage of the second operational amplifier is applied.. . ... Renesas Electronics Corporation

06/14/18 / #20180167238

Rate determination apparatus, rate determination method, and reception apparatus

A rate determination apparatus 1 includes a reception unit 2 configured to receive a transmission frame modulated by an fsk modulation scheme, a symbol rate detection unit 3 configured to detect a symbol rate based on a period of a preamble portion in the received transmission frame, a multilevel symbol detection unit 4 configured to detect a multilevel-modulated multilevel symbol based on a frequency deviation in the received transmission frame, and a bit rate determination unit 5 configured to determine a bit rate based on the detected symbol rate and the detected multilevel symbol. Then, the bit rate can be determined during communication.. ... Renesas Electronics Corporation

06/14/18 / #20180167090

Signal communication device, signal processing system, and signal communication method

It is possible to utilize a system with a long response time using electricity generated by each generator of each communication unit. Communication units 20 and 30 include generators 21 and 31 for generating electricity utilizing a predetermined action included in a series of actions, and wireless communication circuits 24 and 34 operated by electricity supplied from the generators, respectively. ... Renesas Electronics Corporation

06/14/18 / #20180166886

Power feeding device, power feeding system, and control method of power feeding device

A power feeding device coupled to a power receiving device via a usb cable having an authentication chip includes: a communication circuit communicating with the power receiving device; an authentication circuit executing an authentication process with the authentication chip; a power supply circuit supplying power to a power supply line in the usb cable; and a control circuit controlling the power supply circuit based on the authentication process and power supply information of the power feeding device from the communication circuit. When the authentication process between the authentication chip and the authentication circuit succeeds, the control circuit instructs to supply requested voltage and current to the power supply line. ... Renesas Electronics Corporation

06/14/18 / #20180166554

Semiconductor device and manufacturing method

A semiconductor device includes: a first conductivity type semiconductor substrate made of silicon carbide; a second conductivity type body region in a device region of the semiconductor substrate; a first conductivity type source region formed in the body region; and a gate electrode formed on the body region through gate insulating films. The semiconductor device further includes, in a termination region of the semiconductor substrate, second conductivity type resurf layers, and an edge termination region formed in the resurf layers. ... Renesas Electronics Corporation

06/14/18 / #20180166459

Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, includes forming a fin structure on a main surface of semiconductor substrate, the fin structure including a silicon material; forming a first gate electrode over the fin structure via a first insulating film, and forming a second gate electrode over the fin structure via a second insulating film having a charge accumulating part, such that the second gate electrode is disposed along a sidewall of the first gate electrode in a plan view; forming source and drain regions over a surface of the fin structure at both sides of a structure defined by the first and second gate electrodes; performing a first heat treatment to the semiconductor substrate to keep the semiconductor substrate at a first predetermined temperature; and forming a first metal film on the fin structure by sputtering in condition that the semiconductor substrate is at the first predetermined temperature.. . ... Renesas Electronics Corporation

06/14/18 / #20180166430

Semiconductor device and electronic apparatus

A semiconductor device, including a first semiconductor chip including a first substrate having a semiconductor larger in bandgap than silicon, the first semiconductor chip being formed with a first fet including a first gate electrode, a first source, and a first drain, a second semiconductor chip including a second substrate having a semiconductor larger in bandgap than silicon, the second semiconductor chip being formed with a second fet having a second gate electrode, a second source, and a second drain, and a third semiconductor chip including a third substrate having silicon, the third semiconductor chip being formed with a mosfet including a third gate electrode, a third source, and a third drain. The first semiconductor chip and the second semiconductor chip are mounted over a first chip mounting section, and the third semiconductor chip is mounted over a second chip mounting section.. ... Renesas Electronics Corporation

06/14/18 / #20180166401

Semiconductor device

The present disclosure provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Vias are formed in each layer on a dicing region side. ... Renesas Electronics Corporation

06/14/18 / #20180166132

Semiconductor storage device

A semiconductor storage device includes an sram memory cell composed of a drive transistor, a transfer transistor and a load transistor, an i/o circuit that is connected to bit lines connected to the memory cell, and an operating mode control circuit that switches an operating mode of the i/o circuit between a resume standby mode and a normal operation mode, wherein the i/o circuit includes a write driver that writes data to bit lines, a sense amplifier that reads data from the bit lines, a first switch inserted between the bit lines and the write driver, a second switch inserted between the bit lines and the sense amplifier, a precharge circuit that precharges the bit lines, and a control circuit that controls the first and second switches and the precharge circuit according to a signal from the operating mode control circuit.. . ... Renesas Electronics Corporation

06/14/18 / #20180165231

Microcomputer

A microcomputer is provided for each of industrial apparatuses to synchronously control them and includes a cpu, a peripheral module, and a communication interface. The peripheral module controls an external apparatus based on a specified control parameter. ... Renesas Electronics Corporation

06/07/18 / #20180159540

Semiconductor device, control system, and synchronization method

. . In a system for performing clock generation for each semiconductor device, synchronization between the semiconductor devices is achieved without causing a count value in a counter to be discontinuously changed. A semiconductor device 1 includes a clock oscillator 2, a counter 3 configured to count the number of clocks, a periodic register 4 in which a value corresponding to a period for synchronization is set, a comparison circuit 5 configured to compare the count value in the counter 3 with the set value in the periodic register 4, a match flag register 6 in which a predetermined value is set when the count value coincides with the set value, a match output terminal 7 configured to output the value in the match flag register 6 from the own semiconductor device, a match input terminal 8 to which a value output from another semiconductor device to be synchronized is input, and a reset circuit configured to reset the counter 3 and the match flag register 6 when both the value in the match flag register 6 of the own semiconductor device and the value input to the match input terminal 8 become a predetermined value.. ... Renesas Electronics Corporation








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