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Rf Micro Devices Inc patents


Recent patent applications related to Rf Micro Devices Inc. Rf Micro Devices Inc is listed as an Agent/Assignee. Note: Rf Micro Devices Inc may have other listings under different names/spellings. We're not affiliated with Rf Micro Devices Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Rf Micro Devices Inc-related inventors


Bandwidth optimization for power amplifier power supplies

Circuitry, which includes a pa power supply and rf pa circuitry, is disclosed. The rf pa circuitry includes a group of rf pas and a group of pa decoupling circuits. ... Rf Micro Devices Inc

Guided wave devices with selectively loaded piezoelectric layers

A micro-electrical-mechanical system (mems) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.. ... Rf Micro Devices Inc

Guided wave devices with sensors utilizing embedded electrodes

A micro-electrical-mechanical system (mems) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.. ... Rf Micro Devices Inc

Mixed domain guided wave devices utilizing embedded electrodes

A micro-electrical-mechanical system (mems) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.. ... Rf Micro Devices Inc

Guided wave devices with embedded electrodes and non-embedded electrodes

A micro-electrical-mechanical system (mems) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.. ... Rf Micro Devices Inc

Guided wave devices with selectively thinned piezoelectric layers

A micro-electrical-mechanical system (mems) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.. ... Rf Micro Devices Inc

Systems for antenna swapping switching and methods of operation thereof

The present disclosure relates to antenna swapping for a wireless, e.g., cellular, radio system. In particular, embodiments of a single-die antenna swapping switching circuit are disclosed. ... Rf Micro Devices Inc

Adaptive capacitors with reduced variation in value and in-line methods for making same

A method of making a capacitor with reduced variance comprises providing a bottom plate in a first metal layer, a first dielectric material over the bottom plate, and a middle plate in a second metal layer to form a first capacitor. The method also comprises measuring the capacitance of the first capacitor, and determining whether to couple none, one, or both of a second capacitor and a third capacitor in parallel with the first capacitor. ... Rf Micro Devices Inc

Tcsaw with improved reliability

Embodiments of a surface acoustic wave (saw) device, or filter, and methods of fabrication thereof are disclosed. In some embodiments, the saw filter comprises a piezoelectric substrate and an interdigitated transducer (idt) on a surface of the piezoelectric substrate. ... Rf Micro Devices Inc

Baw resonator having multi-layer electrode and bo ring close to piezoelectric layer

Embodiments of a bulk acoustic wave (baw) resonator having a high quality factor (q) and methods of fabrication thereof are disclosed. In some embodiments, a baw resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, and a second multi-layer electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer. ... Rf Micro Devices Inc

Baw resonator having lateral energy confinement and methods of fabrication thereof

Embodiments of a bulk acoustic wave (baw) resonator in which an outer region of the baw resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the baw resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a baw resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (tpa). ... Rf Micro Devices Inc

Stealth-dicing compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices

Stealth-dicing-compatible devices and methods to prevent acoustic backside reflections on acoustic wave devices are disclosed. An acoustic wave device comprises a substrate having opposing top and bottom surfaces, where a first portion of the bottom surface has a higher roughness than a second portion of the bottom surface, and an acoustic resonator over the top surface of the substrate. ... Rf Micro Devices Inc

Bonded wafers and surface acoustic wave devices using same

A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces, the structure of the silicon in a top portion of the silicon substrate having been modified to reduce the carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance t; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance d between adjacent fingers of the same electrode, the electrodes comprising a portion of a surface acoustic wave (saw) device. Modification of the top portion of the silicon substrate prevents the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the saw device.. ... Rf Micro Devices Inc

Rf filtering circuitry

Embodiments of radio frequency (rf) filtering circuitry are disclosed. In one embodiment, the rf filtering circuitry includes a first port, a second port, a first rf filter path, and a second rf filter path. ... Rf Micro Devices Inc

02/02/17 / #20170033756

Methods for fabrication of bonded wafers and surface acoustic wave devices using same

A method of fabricating a bonded wafer with low carrier lifetime in silicon comprises providing a silicon substrate having opposing top and bottom surfaces, modifying a top portion of the silicon substrate to reduce carrier lifetime in the top portion relative to the carrier lifetime in portions of the silicon substrate other than the top portion, bonding a piezoelectric layer having opposing top and bottom surfaces separated by a distance t over the top surface of the silicon substrate, and providing a pair of electrodes having fingers that are inter-digitally dispersed on a top surface of the piezoelectric layer, the electrodes comprising a portion of a surface acoustic wave (saw) device. The modifying and bonding steps may be performed in any order. ... Rf Micro Devices Inc

01/26/17 / #20170026064

Transmit spectral regrowth cancellation at receiver port

A front-end module configured to cancel unwanted transmit spectrum at one or more receivers comprises at least one transmitter having a power amplifier and configured to transmit signals to an antenna. The front-end module also comprises at least one receiver to receive the transmit signals, wherein the at least one receiver receives at least a portion of unwanted transmit spectrum. ... Rf Micro Devices Inc

01/26/17 / #20170025358

Multi-layer substrate with an embedded die

The present disclosure relates to a multi-layer substrate structure with an embedded die to miniaturize designs and improve performance. The multi-layer substrate structure includes a core layer having a cavity and a die mounted within the cavity. ... Rf Micro Devices Inc

01/19/17 / #20170019143

Radio frequency (rf) front-end without signal switches

Disclosed is an rf front-end with improved insertion loss having at least a first resonator with a first port and a second port and at least a second resonator having a third port and a fourth port, wherein the first resonator and the second resonator are magnetically coupled by no more than 5%. Also included is at least one coupling structure coupled between the second port of the first resonator and the third port of the second resonator, wherein the coupling structure has a coupling control input for varying a coupling coefficient between the first resonator and the second resonator such that an rf signal transfer between the first port of the first resonator and the fourth port of the second resonator is controllably variable between 5% and 95%.. ... Rf Micro Devices Inc

01/19/17 / #20170019141

Self-activated transfer switch

A self-activated transfer switch is disclosed. The self-activated transfer switch includes a transmit (tx) switch coupled between a tx port and an antenna port. ... Rf Micro Devices Inc

01/05/17 / #20170006544

Dual-output asynchronous power converter circuitry

Dual-output power converter circuitry includes an input node, a first output node, a second output node, a number of capacitive elements, and a number of switching elements. The switching elements are coupled between the input node, the first output node, the second output node, and the capacitive elements. ... Rf Micro Devices Inc

01/05/17 / #20170006543

Dual-mode envelope tracking power converter circuitry

Envelope tracking power converter circuitry is configured to receive a supply voltage, an envelope control signal, and an average power tracking control signal and simultaneously provide an envelope tracking power supply signal for amplifying a first radio frequency (rf) input signal based on the envelope control signal and an average power tracking power supply signal for amplifying a second rf input signal based on the average power tracking control signal.. . ... Rf Micro Devices Inc

01/05/17 / #20170005618

Dual-mode envelope tracking power converter circuitry

Envelope tracking power converter circuitry is configured to receive a supply voltage and simultaneously provide a first envelope tracking power supply signal for amplifying a first rf input signal and a second envelope tracking signal for amplifying a second rf input signal.. . ... Rf Micro Devices Inc

01/05/17 / #20170005385

Switch topology for switching filters multiplexers

This disclosure relates to radio frequency (rf) front end circuitry used to route rf signals. In one embodiment, the rf front end circuitry has a filter circuit and a switch device. ... Rf Micro Devices Inc

01/05/17 / #20170004909

Frequency-dependent resistor and circuitry employing the same

A frequency-dependent resistor and circuitry employing the same are provided. In some embodiments, a resistor includes a substrate, an input port, an output port, and a conductive trace on the substrate between the input port and the output port. ... Rf Micro Devices Inc








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