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Rohm And Haas Electronic Materials Cmp Holdings Inc patents


Recent patent applications related to Rohm And Haas Electronic Materials Cmp Holdings Inc. Rohm And Haas Electronic Materials Cmp Holdings Inc is listed as an Agent/Assignee. Note: Rohm And Haas Electronic Materials Cmp Holdings Inc may have other listings under different names/spellings. We're not affiliated with Rohm And Haas Electronic Materials Cmp Holdings Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Rohm And Haas Electronic Materials Cmp Holdings Inc-related inventors


Polishing slurry for cobalt-containing substrate

The invention is an aqueous slurry useful for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing co0. The slurry includes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (α), 0.5 to 3 wt % colloidal silica particles (β), a cobalt corrosion inhibitor, 0.5 to 2 wt % complexing agent (γ) selected from at least one of l-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-n,n′-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-n,n,n′,n′-tetraacetic acid, and balance water having a ph of 5 to 9. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Method for polishing cobalt-containing substrate

The invention is a method for chemical mechanical polishing a semiconductor substrate having cobalt or cobalt alloy containing features containing co0. The method mixes 0.1 to 2 wt % hydrogen peroxide oxidizing agent (α) into a slurry containing 0.5 to 3 wt % colloidal silica particles (β), the colloidal silica particles containing primary particles, 0.5 to 2 wt % complexing agent (γ) selected from at least one of l-aspartic acid, nitrilotriacetic acid, nitrilotri(methylphosphonic acid), ethylenediamine-n,n′-disuccinic acid trisodium salt, and ethylene glycol-bis (2aminoethylether)-n,n,n′,n′-tetraacetic acid, and balance water having a ph of 5 to 9 to create a polishing slurry for the semiconductor substrate. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a polyglycol or polyglycol derivative; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a ph adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (w) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (w) is inhibited as well as erosion of dielectrics underlying the tungsten (w).. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Chemical mechanical polishing method for tungsten

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a ph adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (w) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (w) is inhibited as well as erosion of dielectrics underlying the tungsten (w).. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Methods of cleaning cmp polishing pads

The present invention provides methods for cleaning the surface of cmp polishing pads comprising blowing a stream or curtain of forced air or gas from a source onto the surface of a cmp polishing pad substrate at a pressure of from 170 kpa (24.66 psig) to 600 kpa (87 psig), towards a vacuum source, the forced air or gas blowing at an angle of from 6 to 15° from a vertical plane which lies normal to the surface of the substrate, traverses the entire width of the surface of the substrate, and passes through the source of the forced air or gas, while, at the same time conveying along a horizontal plane the cmp polishing pad so that the entire surface of the cmp polishing pad surface is exposed to the forced air or gas at least one time; and, vacuuming the surface of the cmp polishing pad at a point on the surface which is downstream from a point at which the stream curtain of forced air or gas contacts the surface of the cmp polishing pad.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Methods for making chemical mechanical planarization (cmp) polishing pads having integral windows

The present invention provides methods of making a chemical mechanical planarization (cmp) polishing layer or pad comprising providing an open mold having a surface with a female topography that generates a flat or shaped cmp polishing layer surface and having held in place thereon one or more endpoint detection window pieces; mixing a liquid isocyanate component with a liquid polyol component to form a solvent free reaction mixture; spraying the reaction mixture onto the open mold while the one or more window pieces is held in place, with each window piece at a predefined location, followed by curing the reaction mixture.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Formulations for chemical mechanical polishing pads and cmp pads made therewith

A two component composition for making chemical mechanical polishing pad for polishing a semiconductor substrate is provided comprising a liquid aromatic isocyanate component having an unreacted isocyanate (nco) concentration of from 15 to 40 wt. %, based on the total solids weight of the aromatic isocyanate component, such as methylene di(phenylisocyanate) (mdi), a liquid polyol component of a polyol having a polyether backbone and having from 5 to 7 hydroxyl groups per molecule, and a curative of one or more polyamine or diamine, wherein the reaction mixture comprises 50 to 65 wt. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Cmp polishing composition comprising positive and negative silica particles

The present invention provides aqueous chemical mechanical planarization (cmp) polishing compositions comprising a positively charged silica particle composition with from 3 to 20 wt. % in total, based on the total silica particle solids in the cmp polishing composition, of one or more negatively charged silica particle compositions in which the silica particles have a z-average particle size as determined by dynamic light scattering (dls) of from 5 to 50 nm. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Apparatus for shaping the surface of chemical mechanical polishing pads

The present invention provides apparati for pre-conditioning polymeric, preferably, porous polymeric, chemical mechanical (cmp) polishing pads or layers and polishing a substrate that comprise a rotary grinder assembly having a rotor with a grinding surface of a porous abrasive material, a flat bed platen for holding the cmp polishing pad or layer in place so that the grinding surface of the rotary grinder is disposed above and parallel to the surface of the flat bed platen to form an interface of the surface of the cmp polishing layer and the porous abrasive material, and a substrate holder located above and parallel to a top surface of the flat bed platen and to which a cmp substrate is attached, thereby creating a polishing interface between the surface of the substrate and the cmp polishing layer wherein the substrate holder rotates independently from the rotary grinder assembly and the flat bed platen.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Chemical mechanical polishing pads having a consistent pad surface microtexture

The present invention provides pre-conditioned chemical mechanical (cmp) polishing pads comprising a polymer, preferably, a porous polymer having a pad surface microtexture effective for polishing having a series of visibly intersecting arcs on the polishing layer surface, the intersecting arcs having a radius of curvature equal to or greater than half of the radius of curvature of the pad and extending all the way around the surface of the pad in radial symmetry around the center point of the pad wherein the resulting cmp polishing pad has a surface roughness of from 0.01 μm to 25 μm, sq. The cmp polishing pads may be made by methods comprising grinding the surface of a cmp polishing pad with a rotary grinder to form the surface microtexture.. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Auto catch apparatus and method of use in making chemical mechanical polishing pads

The present invention provides an apparatus for use in mixing and dispensing a curable fluid stream (stream) into an open mold to fill the mold to make polishing pads for chemical mechanical planarization of substrates. The apparatus comprises an actuator frame on which is mounted (i) a set of two plates releasably attached to the actuator frame and adapted to cut the stream when the mold is full and to release from the actuator frame after cutting the stream, and (ii) a dispenser unit for continuous pouring of the stream into an open mold, the apparatus adapted to enable removal of the released plates from the actuator during the continuous pouring after the mold is full, e.g. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Thermoplastic poromeric polishing pad

The porous polyurethane polishing pad includes a porous matrix having large pores that extend upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Low-defect-porous polishing pad

The polishing pad is suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates with a polishing fluid and relative motion between the polishing pad and the at least one of semiconductor, optical and magnetic substrates. The polishing layer has an open-cell polymeric matrix, a polishing surface a plurality of grooves in the polishing layer. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

Tapered poromeric polishing pad

The porous polyurethane polishing pad includes a porous polyurethane matrix having large pores extending upward from a base surface and open to a polishing surface. A series of pillow structures is formed from the porous matrix that include the large pores and the small pores. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

02/08/18 / #20180036860

Tapering method for poromeric polishing pad

The method forms a porous polyurethane polishing pad by coagulating thermoplastic polyurethane to create a porous matrix having large pores extending upward from a base surface and open to an upper surface. The large pores are interconnected with small pores. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

09/28/17 / #20170274496

Debris-removal groove for cmp polishing pad

The invention provides a polishing pad suitable for polishing or planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad includes a polishing layer having a polymeric matrix, a thickness and a polishing track representing a working region of the polishing layer for polishing or planarizing. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

03/16/17 / #20170073456

Polishing pad and method for producing same

The purpose of the present invention is to provide: a polishing pad having a high polishing rate and excellent planarizing properties; and a method for producing the polishing pad. A polishing pad which has a polishing layer comprising a polyurethane resin foam, said polishing pad being characterized in that a polyurethane resin, which is a material used for forming the polyurethane resin foam, has an alkoxysilyl group represented by general formula (1) in a side chain thereof. ... Rohm And Haas Electronic Materials Cmp Holdings Inc








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