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Rohm And Haas Electronic Materials Cmp Holdings Inc patents (2015 archive)


Recent patent applications related to Rohm And Haas Electronic Materials Cmp Holdings Inc. Rohm And Haas Electronic Materials Cmp Holdings Inc is listed as an Agent/Assignee. Note: Rohm And Haas Electronic Materials Cmp Holdings Inc may have other listings under different names/spellings. We're not affiliated with Rohm And Haas Electronic Materials Cmp Holdings Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "R" | Rohm And Haas Electronic Materials Cmp Holdings Inc-related inventors


12/31/15 / #20150380295

Chemical mechanical polishing composition and method for polishing tungsten

A composition and method for tungsten is provided comprising: a metal oxide abrasive; an oxidizer; a tungsten removal rate enhancing substance according to formula i; and, water; wherein the polishing composition exhibits an enhanced tungsten removal rate and a tungsten removal rate enhancement.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

10/01/15 / #20150273652

Chemical mechanical polishing pad with polishing layer and window

A chemical mechanical polishing pad is provided having a polishing layer; and an endpoint detection window incorporated into the chemical mechanical polishing pad, wherein the endpoint detection window is a plug in place window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: a window prepolymer, and, a window curative system, comprising: at least 5 wt % of a window difunctional curative; at least 5 wt % of a window amine initiated polyol curative; and, 25 to 90 wt % of a window high molecular weight polyol curative.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

10/01/15 / #20150273651

Chemical mechanical polishing pad with endpoint detection window

A chemical mechanical polishing pad is providing containing a polishing layer having a polishing surface; and, an endpoint detection window; wherein the endpoint detection window comprises a reaction product of ingredients, comprising: an isocyanate terminated urethane prepolymer having 2 to 6.5 wt % unreacted nco groups; and, a curative system, comprising: at least 5 wt % of a difunctional curative; at least 5 wt % of an amine initiated polyol curative having at least one nitrogen atom per molecule and an average of at least three hydroxyl groups per molecule; and, 25 to 90 wt % of a high molecular weight polyol curative having a number average molecular weight, mn, of 2,000 to 100,000 and an average of 3 to 10 hydroxyl groups per molecule. Also provide are methods of making and using the chemical mechanical polishing pad.. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

08/20/15 / #20150231765

Method of manufacturing chemical mechanical polishing layers

A method of making a polishing layer for polishing a substrate is provided, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a vacuum to form a plurality of exposed hollow microspheres; treating the plurality of exposed hollow microspheres with a carbon dioxide atmosphere to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ≦24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

08/20/15 / #20150231758

Method of manufacturing chemical mechanical polishing layers

A method of making a polishing layer for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate is provided, comprising: providing a liquid prepolymer material; providing a plurality of hollow microspheres; exposing the plurality of hollow microspheres to a carbon dioxide atmosphere for an exposure period to form a plurality of treated hollow microspheres; combining the liquid prepolymer material with the plurality of treated hollow microspheres to form a curable mixture; allowing the curable mixture to undergo a reaction to form a cured material, wherein the reaction is allowed to begin ≦24 hours after the formation of the plurality of treated hollow microspheres; and, deriving at least one polishing layer from the cured material; wherein the at least one polishing layer has a polishing surface adapted for polishing the substrate.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

04/02/15 / #20150093900

Chemical mechanical polishing composition for polishing silicon wafers and related methods

A chemical mechanical polishing composition for polishing silicon wafers is provided, containing: water, optionally, an abrasive; a cation according to formula (i); piperazine or a piperazine derivative according to formula (ii); and, a quaternary ammonium compound; wherein the chemical mechanical polishing composition exhibits a ph of 9 to 12. Also provided are methods of making and using the chemical mechanical polishing composition.. ... Rohm And Haas Electronic Materials Cmp Holdings Inc

03/19/15 / #20150079788

Low defect chemical mechanical polishing composition

A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an additive according to formula i.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

03/05/15 / #20150065014

Method of chemical mechanical polishing a substrate

A method of chemical mechanical polishing a substrate is provided, including: providing a substrate; providing a chemical mechanical polishing pad, comprising: a polishing layer having a composition and a polishing surface, wherein the composition of polishing layer is selected to exhibit an initial hydrolytic stability; coupled with a sustained hydrolytic instability; a rigid layer having a top surface and a bottom surface; a hot melt adhesive interposed between the base surface of the polishing layer and the top surface of the rigid layer; wherein the hot melt adhesive bonds the polishing layer to the rigid layer; a pressure sensitive platen adhesive layer having a stack side and a platen side; wherein the stack side of the pressure sensitive platen adhesive layer is adjacent to the bottom surface of the rigid layer; and, creating dynamic contact between the polishing surface and substrate to polish a surface of the substrate.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

03/05/15 / #20150065013

Chemical mechanical polishing pad

A chemical mechanical polishing pad is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer exhibits a specific gravity of greater than 0.6; a shore d hardness of 60 to 90; an elongation to break of 100 to 300%; and, a unique combination of an initial hydrolytic stability and a sustained hydrolytic instability.. . ... Rohm And Haas Electronic Materials Cmp Holdings Inc

03/05/15 / #20150059254

Polyurethane polishing pad

The invention provides a polishing pad suitable for planarizing semiconductor, optical and magnetic substrates. The polishing pad includes a cast polyurethane polymeric material formed from a prepolymer reaction of a polypropylene glycol and a toluene diisocyanate to form an isocyanate-terminated reaction product. ... Rohm And Haas Electronic Materials Cmp Holdings Inc








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