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Shanghai Huali Microelectronics Corporation patents


Recent patent applications related to Shanghai Huali Microelectronics Corporation. Shanghai Huali Microelectronics Corporation is listed as an Agent/Assignee. Note: Shanghai Huali Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with Shanghai Huali Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "S" | Shanghai Huali Microelectronics Corporation-related inventors


High pressure low thermal budge high-k post annealing process

A method of embedding sige when fabricating a pmos device is provided. Multiple layers of sige layers with different ge contents may be formed such that the ge content increases to from bottom layer(s) to middle layer(s), and decreases from the middle layer(s) to top layer(s). ... Shanghai Huali Microelectronics Corporation

Integration process of finfet spacer formation

A novel plasma process is introduced as an improvement over conventional plasma processes during formation of spacers for finfet devices. Under this novel plasma process, an oxide layer is grown over sidewall materials and low energy plasma gas is used for the over-etching of the corner areas of the sidewalls. ... Shanghai Huali Microelectronics Corporation

Method for avoiding il regrown in a hkmg process

The present disclosure addresses and solves the current problem of oxygen accumulation in il after an hkmg stack is formed. A fabrication method is provided for fabricating high-k/metal gate semiconductor device by forming at least one titanium (ti) layer between multiple hk layers. ... Shanghai Huali Microelectronics Corporation

Fabrication technology for metal gate

One aspect of the present disclosure is a method of fabricating metal gate by forming special layers in place of traditional tin hard mask over the ild0 layer to avoid ild0 losses due to conventional ild0 cmp. The method can comprise: after the ild0 cmp, forming a first thin ashable film layer over the ild0 layer; then forming a second thin dielectric layer over the first layer; during the aluminum cmp process for a first region (pmos or nmos), removing the second layer through polishing until the top surface of the first ashable film layer; and then removing first ashable film layer through an ashing method such as burning. ... Shanghai Huali Microelectronics Corporation

Methods for fabricating metal gate structures

One aspect of the present disclosure is a method of fabricating metal gate by forming a silicon-nitride layer (sin) over a dummy gate at a second metal gate type transistor region (e.g. Nmos) avoid dummy gate loss during a cmp process for a pmos gate. ... Shanghai Huali Microelectronics Corporation

High pressure low thermal budge high-k post annealing process

A method of fabricating high-k/metal gate semiconductor device by incorporating an enhanced annealing process is provided. The enhanced annealing process in accordance with the disclosure can be operated at relatively low temperature and high pressure and thus can improve the k value and repair the above-mentioned deficiencies of the hk layer. ... Shanghai Huali Microelectronics Corporation

Method for forming shallow trenches of the dual active regions

The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate; secondly, using a first accurate photomask to expose and develop the semiconductor substrate, until the etch stop layer has been exposed on the top of the first shallow trench regions and the second shallow trench regions; thirdly, etching the etch stop layer entirely in the exposed regions; fourthly, using a second photomask to expose and develop the first shallow trench regions which require a deeper etch depth of the trench than that of the second shallow trench regions; fifthly, etching and forming preliminary entirely depth in the first shallow trench regions, and then removing the second photomask; at last, taking the etch stop layer as a mask, and simultaneously etching the first shallow trench regions and the second shallow trench regions to form the first hallow trenches and the second shallow trenches having different depths. ... Shanghai Huali Microelectronics Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the nmos region and then performs an annealing process to turn the silicon material layer into a tisin interlayer of the pmos region and a tisin layer of the nmos region, respectively. ... Shanghai Huali Microelectronics Corporation

High-k metal gate device and manufaturing method thereof

A high-k metal gate device and manufacturing method thereof are provided in the present invention. The method uses a silicon material layer as a battier layer for the lower silicon nitride layer in the nmos region and then performs an annealing process to turn the silicon material layer into a tisin interlayer of the pmos region and a tisin layer of the nmos region, respectively. ... Shanghai Huali Microelectronics Corporation

Kite shaped cavity for embedding material

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a kite-shaped cavity, and the shaped cavity is filled with silicon and germanium material. ... Shanghai Huali Microelectronics Corporation

Semiconductor device with shaped cavities for embedding germanium material and double trench manufacturing processes thereof

The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor device that comprises a shaped cavity formed from two trench structures, and the shaped cavity is filled with silicon and germanium material. ... Shanghai Huali Microelectronics Corporation

Method of fabricating semiconductor device and semiconductor device fabricated thereby

A method of fabricating a semiconductor device is disclosed. The method includes the steps of forming recesses in a semiconductor substrate; epitaxial growing a first sige seed layer with constant ge content in the recesses; epitaxial growing a second sige layer with a constant ge content higher than the ge content of first sige seed layer on the first sige seed layer; epitaxial growing a third sige layer with a constant ge content lower than the ge content of the second sige layer; and forming a cap layer on the third sige layer.. ... Shanghai Huali Microelectronics Corporation

Methods and systems for reducing dislocation defects in high concentration epitaxy processes

Semiconductor devices including semiconductor junctions and semiconductor field effect transistors that exploit the straining of semiconductor materials to improve device performance are provided. Also described are methods for making semiconductor structures. ... Shanghai Huali Microelectronics Corporation








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