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Tokyo Electron Limited patents


Recent patent applications related to Tokyo Electron Limited. Tokyo Electron Limited is listed as an Agent/Assignee. Note: Tokyo Electron Limited may have other listings under different names/spellings. We're not affiliated with Tokyo Electron Limited, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "T" | Tokyo Electron Limited-related inventors


 new patent  Heat treatment apparatus and temperature control method

Disclosed is a heat treatment apparatus including: a processing container configured to accommodate a substrate; a furnace body having a heater configured to heat the substrate accommodated in the processing container and provided around the processing container; a blower configured to supply a coolant to a space between the processing container and the furnace body; and a controller having a continuous operation mode in which the blower is continuously energized and an intermittent operation mode in which energization and de-energization of the blower are repeated, and configured to control driving of the blower based on an instruction voltage. The controller drives the blower in the intermittent operation mode when the instruction voltage is higher than 0 v and lower than a predetermined threshold voltage.. ... Tokyo Electron Limited

 new patent  Substrate processing method and substrate processing apparatus

In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.. ... Tokyo Electron Limited

 new patent  Selective siarc removal

Methods and systems for selective silicon anti-reflective coating (siarc) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a siarc layer, a pattern transfer layer, and an underlying layer. ... Tokyo Electron Limited

 new patent  Plasma processing method and plasma processing apparatus

In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. ... Tokyo Electron Limited

 new patent  Substrate processing apparatus

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.. . ... Tokyo Electron Limited

 new patent  Operating method of processing liquid supply apparatus and recording medium

An operating method of a processing liquid supply apparatus which supplies a processing liquid to a substrate from a processing liquid supply path via a nozzle includes measuring a surface potential of a first electrode which is configured to be in contact with the processing liquid of the processing liquid supply path. The operating method further includes displaying the measured surface potential in the measuring of the surface potential of the first electrode.. ... Tokyo Electron Limited

Substrate processing apparatus

Disclosed is a substrate processing apparatus including: n (n is an integer of 4 or more) vacuum processing modules each provided with a vacuum container for processing a substrate in a vacuum atmosphere; and an auxiliary facility group including a processing gas supply facility, an evacuation facility, a chiller facility, and a power supply facility. The n vacuum processing modules are grouped into first and second group sets, and in each group set, the vacuum processing modules included in each group share an auxiliary facility selected from the auxiliary facility group.. ... Tokyo Electron Limited

Gas supply device and substrate processing apparatus

A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. ... Tokyo Electron Limited

Method of selectively etching silicon oxide film on substrate

An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.. ... Tokyo Electron Limited

Plasma processing apparatus

Disclosed is a plasma processing apparatus including: a first placing table including a placing surface configured to place thereon a workpiece serving as a plasma processing target, an outer peripheral surface, a heater provided on the placing surface, a power supply terminal provided on a back surface side opposite to the placing table, and a wiring provided on the outer peripheral surface so as to be enclosed in an insulator, the wiring being configured to connect the heater and the power supply terminal; and a second placing table provided along the outer peripheral surface of the first placing table and configured to place a focus ring thereon.. . ... Tokyo Electron Limited

Method for etching multilayer film

In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. ... Tokyo Electron Limited

Plasma processing apparatus

In a plasma processing apparatus, an operation unit configured to calculate a parameter including any one of a load impedance, a load resistance and a load reactance of a high frequency power supply and a reflection wave coefficient of a high frequency power, and a controller configured to sequentially perform multiple cycles, each having plural stages which are performed in sequence. The controller is configured to control a setting of the high frequency power supplied to an electrode to be changed at a time point when the parameter exceeds a threshold value after a processing gas is changed. ... Tokyo Electron Limited

Method and system for sculpting spacer sidewall mask

Provided is a method of forming a spacer sidewall mask, the method comprising: providing a substrate in a process chamber, the substrate having a carbon mandrel pattern and an underlying layer, the underlying layer comprising an amorphous silicon layer above a silicon nitride layer; performing a breakthrough etch process including growth of a conformal native silicon oxide layer, creating an ald patterned structure; performing a spacer sidewall sculpting process on the ald patterned structure; performing an amorphous silicon main etch (me) process on the ald patterned structure, the me process causing a spacer oxide open and carbon mandrel removal; and performing an amorphous silicon me over etch (oe) process on the ald spacer oxide pattern, the me oe process transferring the ald spacer oxide pattern into the amorphous silicon layer, generating a first sculpted pattern comprising a first sculpted sub-structure with a trapezoidal shape.. . ... Tokyo Electron Limited

Method for manufacturing graphene and apparatus for manufacturing graphene

There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.. ... Tokyo Electron Limited

07/05/18 / #20180185856

Liquid processing apparatus and liquid processing method

A liquid processing apparatus includes a holding device, a rotation device, and a processing fluid supply device including a nozzle positioned to face a surface of a substrate, a first supply path connected to the nozzle, and a second supply path connected to the nozzle such that the supply device supplies processing liquid to the substrate. The nozzle has a common flow path extending in radial direction from center portion toward peripheral portion of the substrate, and discharge ports connected to the common path and positioned in the radial direction, the first path is connected to the common path and supplies first liquid to the common path, the second path is connected to the common path and supplies second liquid to the common path that is different from the first liquid in temperature and/or concentration, and the first and second paths are communicatively connected each other via the common path.. ... Tokyo Electron Limited

06/28/18 / #20180182957

Etching method

There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.. ... Tokyo Electron Limited

06/28/18 / #20180182656

Measurement method, method of removing static electricity, and plasma processing apparatus

A measurement method includes vibrating a wafer through up-and-down movement of one or more pins supporting the wafer after performing processing with gas-based plasma generated through application of high-frequency electric power while the wafer, which is placed on a stage in a processing container, is electrostatically adhered by an electro-static chuck, calculating a residual charge amount of the wafer from an induced current flowing through an attracting electrode upon the vibrating of the wafer, and calculating a voltage to be applied to the attracting electrode in response to the calculated residual charge amount of the wafer.. . ... Tokyo Electron Limited

06/28/18 / #20180182652

Substrate processing apparatus, substrate processing method, and substrate processing system

A substrate processing apparatus includes a base member having an opening, a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction, a plurality of shower plates provided to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape, at least one gas introduction member configured to introduce the processing gas into the shower plates, a processing container provided to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber, a heating device configured to heat the substrates in the processing chamber, and an exhaust mechanism configured to evacuate the processing chamber through the opening.. . ... Tokyo Electron Limited

06/28/18 / #20180182638

Method and apparatus for substrate processing

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.. . ... Tokyo Electron Limited

06/28/18 / #20180182635

Focus ring and substrate processing apparatus

A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.. . ... Tokyo Electron Limited

06/28/18 / #20180182616

Substrate processing method and substrate processing apparatus

A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. ... Tokyo Electron Limited

06/28/18 / #20180182612

Substrate processing apparatus and substrate processing method

An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit u5 includes a processing vessel 21 configured to accommodate therein a wafer w as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a hmds gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). ... Tokyo Electron Limited

06/28/18 / #20180182611

Thermal treatment apparatus, thermal treatment method, and non-transitory computer storage medium

A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.. . ... Tokyo Electron Limited

06/28/18 / #20180182610

Substrate cleaning method, substrate cleaning system, and memory medium

A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.. . ... Tokyo Electron Limited

06/28/18 / #20180180509

Method for inspecting for leaks in gas supply system valves

Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. ... Tokyo Electron Limited

06/28/18 / #20180179630

Film forming apparatus and film forming method

A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.. ... Tokyo Electron Limited

06/28/18 / #20180179627

Purging method

A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.. ... Tokyo Electron Limited

06/28/18 / #20180179625

Film forming apparatus, film forming method and heat insulating member

There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.. ... Tokyo Electron Limited

06/21/18 / #20180174897

Method of selective deposition for beol dielectric etch

Embodiments of the invention address several issues and problems associated with etching of dielectric materials for beol applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. ... Tokyo Electron Limited

06/21/18 / #20180174838

Film forming method, boron film, and film forming apparatus

There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 pa (5 to 250 mtorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 pa (5 to 250 mtorr).. ... Tokyo Electron Limited

06/21/18 / #20180174806

Plasma processing apparatus

Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.. . ... Tokyo Electron Limited

06/21/18 / #20180174805

Plasma processing apparatus

A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees c. By using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.. ... Tokyo Electron Limited

06/21/18 / #20180173103

Optical processing apparatus, coating/development apparatus, optical processing method, and non-transitory computer-readable storage medium

An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.. ... Tokyo Electron Limited

06/21/18 / #20180171478

Gas treatment apparatus and gas treatment method

A gas treatment apparatus includes: a mounting part of a substrate; a gas diffusion plate of a processing gas; gas dispersion parts forming a diffusion space of the processing gas between the gas dispersion parts and the gas diffusion plate; and a flow path having an upstream side forming a common flow path of the gas dispersion parts and a downstream side connected to each of the gas dispersion parts, lengths from the common flow path to respective of the gas dispersion parts being aligned, wherein centers of the gas dispersion parts are located around a central portion of the diffusion space, and the gas dispersion parts are arranged along first circles with two or more of the gas dispersion parts arranged on each of the first circles and distances from the central portion of the diffusion space to the centers of gas dispersion parts being different from one another.. . ... Tokyo Electron Limited

06/21/18 / #20180169716

Particle removal method and substrate processing method

A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.. ... Tokyo Electron Limited

06/14/18 / #20180166310

Substrate processing apparatus

A substrate processing apparatus includes a processing section that performs a batch process to a plurality of substrates. A first substrate transport mechanism removes one of substrates contained in a substrate container placed on a stage, and transport the substrate to a position adjusting unit, in which the position of the substrate in the rotating direction of the substrate is adjusted, and transports the substrate back to the substrate container. ... Tokyo Electron Limited

06/14/18 / #20180166303

Method of selectively etching first region made of silicon nitride against second region made of silicon oxide

Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.. ... Tokyo Electron Limited

06/14/18 / #20180166298

Substrate processing apparatus

In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. ... Tokyo Electron Limited

06/14/18 / #20180166295

Etching method and substrate processing system

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.. ... Tokyo Electron Limited

06/14/18 / #20180166259

Mounting table and plasma processing apparatus

Non-uniformity of temperature of a focus ring can be improved by reducing holes which hamper a heat transfer from the focus ring to a base. A mounting table includes the base configured to place a processing target object thereon; the focus ring provided on the base to surround a region on which the processing target object is placed; a connecting member provided with a through hole and configured to connect the base to a member provided below the base by being inserted into an insertion hole formed at a region of the base which corresponds to a lower portion of the focus ring; and a lifter pin provided at the base such that the lifter pin is allowed to be protruded from the insertion hole by being inserted into the through hole of the connecting member, and configured to raise the focus ring by being protruded from the insertion hole.. ... Tokyo Electron Limited

06/14/18 / #20180166257

Method for supplying gas, and plasma processing apparatus

In the exemplary embodiment, a method for supplying a gas is provided. This method includes: supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve.. ... Tokyo Electron Limited

06/14/18 / #20180164700

Substrate treatment system, substrate transfer method, and computer storage medium

A substrate treatment system includes: a treatment station including a plurality of treatment apparatuses; an interface station which delivers a substrate to/from an exposure apparatus provided outside the system and including a plurality of exposure stages; a plurality of substrate inspection apparatuses; a substrate transfer mechanism which transfers the substrate between each of the treatment apparatuses in the treatment station and the substrate inspection apparatus; and a control apparatus which identifies an exposure stage which has been used in exposure processing of a substrate from among the plurality of exposure stages, and controls the substrate transfer mechanism to transfer the substrate after the exposure processing to a substrate inspection apparatus previously made to correspond to the identified exposure stage.. . ... Tokyo Electron Limited

06/14/18 / #20180164696

Optical processing apparatus and substrate processing apparatus

An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. ... Tokyo Electron Limited

06/14/18 / #20180164689

Substrate treatment method and thermal treatment apparatus

A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.. . ... Tokyo Electron Limited

06/07/18 / #20180158796

Bonding apparatus, bonding system, bonding method and storage medium

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.. . ... Tokyo Electron Limited

06/07/18 / #20180158711

Plasma processing apparatus

A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. ... Tokyo Electron Limited

06/07/18 / #20180158701

Substrate liquid processing apparatus and substrate liquid processing method

A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. ... Tokyo Electron Limited

06/07/18 / #20180158699

Method of cleaning substrate processing apparatus and system of cleaning substrate processing apparatus

Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. ... Tokyo Electron Limited

06/07/18 / #20180158693

Method of manufacturing semiconductor device

There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.. . ... Tokyo Electron Limited

06/07/18 / #20180158684

Method of processing target object

A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. ... Tokyo Electron Limited

06/07/18 / #20180158676

Supercritical fluid producing apparatus and substrate processing apparatus

A supercritical fluid producing apparatus according to the present disclosure includes a gas supply line, a cooler, a pump, a buffer tank, a heating device, and a supercritical fluid supply line. An inlet port into which a processing fluid from the pump flows is formed at a predetermined position on the buffer tank, and an outlet port through which the processing fluid flows out is formed at a different position from the inlet port. ... Tokyo Electron Limited

06/07/18 / #20180158671

Film forming apparatus and film forming method

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.. ... Tokyo Electron Limited

06/07/18 / #20180158657

Methods and systems for chamber matching and monitoring

A method and a system for plasma etching are provided. The method includes measuring a first set of plasma etch processing parameters; determining an etch rate; altering the plasma etch processing chamber hardware configuration if the determined etch rate differs from a standard etch rate by more than a predetermined etch rate difference threshold, thereafter repeating the determining and altering until the determined etch rate differs from the standard etch rate by less than the predetermined etch rate difference threshold. ... Tokyo Electron Limited

06/07/18 / #20180158654

Etching method and plasma processing apparatus

An etching method is provided for processing a substrate that includes a first region having an insulating film arranged on a silicon layer and a second region having the insulating film arranged on a metal layer. The etching method includes a first step of etching the insulating film into a predetermined pattern using a plasma generated from a first gas until the silicon layer and the metal layer are exposed, and a second step of further etching the silicon layer after the first step using a plasma generated from a second gas including a bromide-containing gas.. ... Tokyo Electron Limited

06/07/18 / #20180158652

Methods and systems for chamber matching and monitoring

A method and a system for monitoring a plasma chamber are provided. The method includes receiving process chamber characteristics from the plasma chamber; determining whether one or more variables associated with the process chamber characteristics are within predetermined specification. ... Tokyo Electron Limited

06/07/18 / #20180158650

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. ... Tokyo Electron Limited

06/07/18 / #20180157178

Substrate processing apparatus, substrate processing method and recording medium

A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.. . ... Tokyo Electron Limited

06/07/18 / #20180156739

Substrate inspection method, computer storage medium and substrate inspection apparatus

A method of inspecting a substrate to be repeatedly treated along a predetermined transfer way in a plurality of kinds of different treatment apparatuses, includes: imaging a substrate that has been treated in one of the treatment apparatuses, to acquire a first substrate image; imaging a substrate that has been an object for imaging the first substrate image and further treated in another treatment apparatus different from the one treatment apparatus after treated in the one treatment apparatus, to acquire a second substrate image; then performing defect inspection, based on the first substrate image and the second substrate image; and identifying, depending on whether or not a defect detected from the second substrate image is not detected from the first substrate image, whether or not the defect is caused by a treatment after the first substrate image is acquired and a treatment before the second substrate image is acquired.. . ... Tokyo Electron Limited

06/07/18 / #20180155830

Gas supply and exhaust structure

A gas supply and exhaust structure, for supplying and exhausting a raw material gas into and from a chamber having a substrate mounting surface at a position corresponding to a central portion of an inner top surface, includes a side gas supply unit having gas supply ports arranged circumferentially and vertically on an inner side surface of the chamber and configured to supply the raw material gas through the gas supply ports toward a central axis of the chamber, and an exhaust unit having a gas exhaust port formed at the central portion of the inner top surface of the chamber and configured to exhaust the raw material gas. The inner top surface has an inclined surface inclined such that a distance between the inner top surface and an inner bottom surface of the chamber becomes smaller from the inner side surface toward the central axis.. ... Tokyo Electron Limited

06/07/18 / #20180155829

Cleaning method and film deposition apparatus

A method performed by a film deposition apparatus including a process chamber and a rotary table that is disposed in the process chamber and includes a substrate-mounting surface on which a substrate is placeable. The method includes a first cleaning process of supplying a cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a first cleaning position, and a second cleaning process of supplying the cleaning gas from above the substrate-mounting surface of the rotary table while rotating the rotary table in a second cleaning position that is lower than the first cleaning position.. ... Tokyo Electron Limited

06/07/18 / #20180155817

Film forming apparatus

A film forming apparatus includes: a chamber main body defining a chamber; a slit plate partitioning the chamber into a first space and a second space below the first space, the slit plate having a slit penetrating therethrough; a holder holding a target in the first space; a stage for supporting a substrate, the stage being movable in a moving direction perpendicular to a longitudinal direction of the slit in a moving area including an area directly below the slit; and a mechanism for moving the stage along the moving direction. In order to suppress scattering of particles from the target to another area other than the moving area in the second space through the slit, the stage has one or more protruding portions which provide upwardly and/or downwardly bent portions in a path around the stage between the slit and the another area in the second space.. ... Tokyo Electron Limited

05/31/18 / #20180151380

Substrate processing apparatus and heat shield plate

There is provided a substrate processing apparatus which includes: a process container configured to accommodate a substrate; a partition member disposed between plasma generated inside the process container and the substrate, the partition member configured to selectively transmit radicals in the plasma toward the substrate; and a heat shield plate disposed between the partition member and the substrate. The heat shield plate is disposed so as to face the substrate. ... Tokyo Electron Limited

05/31/18 / #20180151343

Substrate processing apparatus, substrate processing method and storage medium

A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.. . ... Tokyo Electron Limited

05/31/18 / #20180151333

Plasma etching method

In a plasma etching method, a deposit containing an element forming an upper electrode is deposited on a metal-containing mask having a predetermined pattern while sputtering the upper electrode by a plasma of a first processing gas. Then, an etching target film is etched by a plasma of a second processing gas while using the metal-containing mask on which the deposit is deposited as a mask.. ... Tokyo Electron Limited

05/31/18 / #20180151332

Plasma processing apparatus

A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. ... Tokyo Electron Limited

05/31/18 / #20180148838

Processing method and processing apparatus

A processing method includes a first process of exposing a first sensor to a processing space within a chamber and blocking a second sensor from the processing space within the chamber; a second process of supplying a first processing gas containing a precursor gas into the chamber; a third process of controlling a state within the chamber based on a measurement value of the first sensor; a fourth process of blocking the first sensor from the processing space within the chamber and exposing the second sensor to the processing space within the chamber; a fifth process of supplying a second processing gas containing a reactant gas into the chamber; and a sixth process of controlling the state within the chamber based on a measurement value of the second sensor. The first process to the six process are repeatedly performed multiple times.. ... Tokyo Electron Limited

05/24/18 / #20180144948

Method for etching layer to be etched

In a method of an embodiment, radicals, which are generated from a processing gas, is adsorbed to a layer to be etched without applying a high-frequency bias to a lower electrode, in an adsorption step. In the subsequent etching step, ions, which are generated from the processing gas, are drawn into the layer to be etched by applying a high-frequency bias to the lower electrode. ... Tokyo Electron Limited

05/24/18 / #20180144946

Method of plasma discharge ignition to reduce surface particles

Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (rf) power source configured to couple rf power to a top portion of the process chamber, a second rf power source configured to couple rf power to the holder, and a direct current (dc) power supply. ... Tokyo Electron Limited

05/24/18 / #20180144945

Placing unit and plasma processing apparatus

The present disclosure relates to a placing unit including: a base to which a high-frequency power is applied; an electrostatic chuck provided on the base and including a placing region configured to place a workpiece and an outer peripheral region configured to surround the placing region; a heater provided in the placing region; a wiring layer connected to the heater and extending to an inside of the outer peripheral region; a power supply terminal connected to a contact portion of the wiring layer in the outer peripheral region; and a conductive layer formed in the outer peripheral region or in other regions along a thickness direction of the outer peripheral region so as to overlap with the power supply terminal when viewed from thickness direction of the outer peripheral region.. . ... Tokyo Electron Limited

05/24/18 / #20180144931

Method of forming silicon-containing film

A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula xsicl3 (wherein x is an element whose bonding energy with si is smaller than bonding energy of a si—cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.. . ... Tokyo Electron Limited

05/24/18 / #20180144078

Generation of a map of a substrate using iterative calculations of non-measured attribute data

Described herein are technologies to facilitate the generation and presentation of a map of an attribute of a substrate, such as a semiconductor wafer. Using the data of measured attribute (e.g., thickness, temperature, etc.) of a substrate, one or more of the described implementations generate data of non-measured (i.e., calculated) attributes to complete a map of the substrate using model parameters and a correlations model, such as a squared exponential gaussian process model.. ... Tokyo Electron Limited

05/24/18 / #20180143540

Exposure apparatus, exposure method and storage medium

An exposure apparatus includes: a stage on which a substrate is placed; a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate; a rotation mechanism configured to rotate the substrate placed on the stage relative to the irradiation area; a stage moving mechanism configured to move the stage relative to the irradiation area in a back and forth direction; and a control unit configured to output control signals that make said exposure apparatus perform a first step that rotates the substrate relative to the irradiation area having a first illuminance distribution such that the whole surface of the substrate is exposed, and a second step that moves the substrate in the back and forth direction relative to the irradiation area having a second illuminance distribution while rotation of the substrate is being stopped, such that the whole surface of the substrate is exposed.. . ... Tokyo Electron Limited

05/24/18 / #20180143144

Substrate inspection method, substrate treatment system, and computer storage medium

A substrate inspection method in a substrate treatment system including a plurality of treatment apparatuses each performing a predetermined treatment on a substrate, includes: imaging a surface of a substrate before being treated in the treatment apparatuses to acquire a first substrate image; extracting a predetermined feature amount from the first substrate image; selecting an inspection recipe corresponding to the feature amount extracted from the first substrate image, from a storage unit in which a plurality of inspection recipes each set corresponding to the feature amount in a different range are stored; imaging the surface of the substrate after being treated in the treatment apparatuses to acquire a second substrate image; and determining presence or absence of a defect of the substrate, based on the selected inspection recipe and the second substrate image.. . ... Tokyo Electron Limited

05/24/18 / #20180143141

Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process

Described herein are architectures, platforms and methods for detecting and analyzing anomalous events (i.e., arcing events) from spectral data gathered during a wafer fabrication process.. . ... Tokyo Electron Limited

05/24/18 / #20180142357

Substrate processing apparatus, injector, and substrate processing method

There is provided a substrate processing apparatus, including: a process vessel configured to accommodate a plurality of substrates; a gas supply part configured to supply a gas into the process vessel; an exhaust part configured to exhaust the gas in the process vessel; and a scavenging part configured to scavenge an interior of the gas supply part, wherein the gas supply part is connected to the scavenging part.. . ... Tokyo Electron Limited

05/24/18 / #20180142350

Film formation processing method and film formation procesing apparatus

There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.. . ... Tokyo Electron Limited

05/17/18 / #20180139834

Filter device and plasma processing apparatus

A filter device includes a plurality of coils of which central axes are spaced apart from one another and in parallel to one another and a plurality of ground members spaced apart from one another and extending in parallel to the central axes of the coils outside of the coils. Each of the coils is spaced apart from another coil closest thereto by a first distance. ... Tokyo Electron Limited

05/17/18 / #20180138835

Stage and substrate processing apparatus

A stage includes a heat exchanger, a plate provided on the heat exchanger and including a first main surface and a second main surface opposite to each other, the plate having a plurality of through-holes extending in a plate thickness direction, and an electrostatic chuck having a top surface on which a substrate is mounted and a bottom surface attached to the first main surface. The heat exchanger includes a plurality of first tubes having a plurality of opening ends facing a plurality of regions on the bottom surface which are exposed to the respective through-holes and a plurality of second tubes communicating with the through-holes.. ... Tokyo Electron Limited

05/17/18 / #20180138291

Method of forming gate spacer for nanowire fet device

A method of forming a gate-all-around semiconductor device, includes providing a substrate having a layered fin structure thereon. The layered fin structure includes a channel portion and a sacrificial portion each extending along a length of the layered fin structure, wherein the layered fin structure being covered with replacement gate material. ... Tokyo Electron Limited

05/17/18 / #20180138268

Method of preventing bulk silicon charge transfer for nanowire and nanoslab processing

A method of fabricating a semiconductor device includes providing a substrate having a layered fin structure thereon. The layered fin structure includes base fin portion, a sacrificial portion provided on the base fin portion and a channel portion provided on the sacrificial portion. ... Tokyo Electron Limited

05/17/18 / #20180138096

Abnormality detection apparatus

Disclosed is an abnormality detection apparatus including: a collection unit that collects state information indicating a state of each part of a semiconductor manufacturing apparatus in a predetermined cycle; a storage unit that stores the state information collected by the collection unit as a log for each predetermined unit; an arithmetic unit that generates a monitoring band for monitoring the state of each part of the semiconductor manufacturing apparatus, based on the log; and a determination unit that determines whether the state of each part of the semiconductor manufacturing apparatus is abnormal, based on the state information and the monitoring band.. . ... Tokyo Electron Limited

05/17/18 / #20180138078

Method for regulating hardmask over-etch for multi-patterning processes

Techniques herein include patterning processes to prevent over-etching for various multi-patterning processes. Multi-patterning processes typically involve creation of sidewall spacers and removal of mandrels on which sidewall spacers are formed. ... Tokyo Electron Limited

05/17/18 / #20180138060

Substrate processing apparatus

Disclosed is a substrate processing apparatus including: a container body configured to accommodate a substrate and perform a processing on the substrate using a high-pressure processing fluid; a conveyance port configured to carry the substrate into and out of the container body; an opening formed in the container body at a position different from the conveyance port; and a cover member configured to close the opening.. . ... Tokyo Electron Limited

05/17/18 / #20180138058

Substrate processing apparatus, substrate processing method, and storage medium

A substrate processing apparatus of the present disclosure includes: a processing container; and a supply line which connects the processing container with a fluid source that delivers a supercritical processing fluid. A first opening/closing valve is provided in the supply line. ... Tokyo Electron Limited

05/17/18 / #20180138051

Methods of sub-resolution substrate patterning

Techniques disclosed herein provide a method for substrate patterning that results in lines of non-uniform pitch (mixed pitch). Techniques can also enable advanced patterning options by selectively replacing lines of material in a multi-line layer. ... Tokyo Electron Limited

05/17/18 / #20180138035

Substrate processing apparatus, substrate processing method, and storage medium

During at least part of a time period for a pressure increasing step of increasing a pressure inside a processing container from a pressure lower than a critical pressure of a processing fluid to a pressure higher than the critical pressure, pressure increasing is performed by supplying the processing fluid into the processing container from a fluid supply source while discharging the processing fluid from the processing container at a controlled discharge flow rate. Particles attached to the surfaces of members inside the processing container travel upward by the supply of the processing fluid into the processing container from the fluid supply source. ... Tokyo Electron Limited

05/17/18 / #20180138018

Dual-frequency surface wave plasma source

Described herein is a technology related to a method for utilizing a dual-frequency surface wave plasma sources to provide stable ionizations on a plasma processing system. Particularly, the dual-frequency surface wave plasma sources may include a primary surface wave power plasma source and a secondary power plasma source, which is provided on each recess of a plurality of recesses. ... Tokyo Electron Limited

05/17/18 / #20180138016

Controlling etch rate drift and particles during plasma processing

The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a yxoyfz layer that comprises y in a range from 20 to 40%, o in a range from greater than zero to less than or equal to 60%, and f in a range of greater than zero to less than or equal to 75%. Alternatively, the yxoyfz layer can comprise y in a range from 25 to 40%, o in a range from 40 to 55%, and f in a range of 5 to 35% or y in a range from 25 to 40%, o in a range from 5 to 40%, and f in a range of 20 to 70%.. ... Tokyo Electron Limited

05/17/18 / #20180136567

Exposure apparatus, exposure apparatus adjustment method and storage medium

An exposure apparatus includes a stage on which a substrate is placed, a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate, a stage moving mechanism configured to move the stage in a back and forth direction relative to the irradiation area, such that the whole surface of the substrate is exposed, and a light receiving unit configured move in the irradiation area between one end and the other end of the irradiation area in order to detect an illuminance distribution of the irradiation area in a longitudinal direction of the irradiation area.. . ... Tokyo Electron Limited

05/17/18 / #20180136013

Sensor chip for electrostatic capacitance measurement and measuring device having the same

Electrostatic capacitance can be measured with high directivity in a specific direction. A sensor chip that measures the electrostatic capacitance includes a first electrode, a second electrode and a third electrode. ... Tokyo Electron Limited

05/17/18 / #20180135179

Gas injector and vertical heat treatment apparatus

A gas injector is installed in a vertical heat treatment apparatus which performs a heat treatment on substrates held by a substrate holder and is loaded into a vertical reaction container around which a heating part is disposed. The gas injector supplies a film forming gas to the substrates into the reaction container. ... Tokyo Electron Limited

05/17/18 / #20180135178

Film deposition apparatus and film deposition method

A film deposition apparatus includes a process chamber and a turntable provided in the process chamber. The turntable includes a substrate receiving region to receive a substrate thereon and provided along a circumferential direction of the turntable. ... Tokyo Electron Limited

05/17/18 / #20180135170

Film forming apparatus

An apparatus includes a raw material gas supply part including a discharge part for discharging a raw material gas and an exhaust port formed to surround the discharge part, reaction and modification regions formed apart from the raw material gas supply part, a reaction gas discharge part for discharging a reaction gas toward one of upstream and downstream sides, a modification gas discharge part for discharging a modification gas toward one of upstream and downstream sides, a reaction gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the reaction region, a modification gas exhaust port formed to face an end portion of the other of the upstream and downstream sides of the modification region, and plasma generation parts for reaction gas and modification gas which activate gases respectively supplied to the reaction and modification regions.. . ... Tokyo Electron Limited

05/17/18 / #20180135169

Tin-based film and tin-based film forming method

A tin-based film includes tion films having an oxygen content of 50% or above and tin films which are laminated alternately on a substrate. In a tin-based film forming method, a tion film having an oxygen content of 50 at % or above and a tin film are alternately formed on a substrate.. ... Tokyo Electron Limited

05/17/18 / #20180135161

Film formation apparatus and film formation method

A film formation apparatus for forming a self-assembled monomolecular film on a film formation surface of a substrate includes: a chamber for accommodating the substrate, the chamber including a facing inner wall surface facing the film formation surface of the substrate, the facing inner wall surface being a ground potential surface; a source gas supply part for supplying a source gas for the self-assembled monomolecular film into the chamber; and an electrode positioned between the film formation surface of the substrate accommodated in the chamber and the facing inner wall surface of the chamber, and configured to form an electric field in a direction extending from the film formation surface of the substrate accommodated in the chamber toward the facing inner wall surface of the chamber or in a direction extending from the facing inner wall surface of the chamber toward the film formation surface of the substrate.. . ... Tokyo Electron Limited

05/10/18 / #20180130708

Method for fully self-aligned via formation using a directed self assembly (dsa) process

A formed back-end-of-line (beol) metal line layer may include a plurality of metal lines with dielectric oxide caps that are disposed in between each metal lines. To overlay an interconnecting layer of metal lines on a selected metal line of the beol metal line layer, a block copolymer (bcp) may be formed on a patterning layer. ... Tokyo Electron Limited

05/10/18 / #20180130681

Processing system

A processing system includes: at least one processing unit. Each processing unit includes a plurality of processing chambers, and a utility module. ... Tokyo Electron Limited

05/10/18 / #20180130677

Substrate processing apparatus

A substrate processing apparatus can suppress a rear surface of a substrate from being contaminated when moving the substrate and a liquid supply unit upwards. When a lift pin 22 and a liquid supply pipe 40 are moved from a neighboring position where they are adjacent to a holding plate 30 to a distanced position, an elevating device 60 raises only the lift pin 22 for a time during which the first lifting member 61 is moved up to a preset position while being connected to the lift pin 22. ... Tokyo Electron Limited

05/10/18 / #20180130675

Substrate processing apparatus, substrate processing method, and recording medium

A substrate processing apparatus performs: a pressure raising process of raising a pressure within the processing container to a processing pressure higher than a critical pressure of the processing fluid, after the substrate is accommodated in the processing container; and a circulation process of supplying the processing fluid to the processing container and discharging the processing fluid from the processing container while keeping a pressure at which the processing fluid is maintained in the supercritical state, within the processing container. In the pressure raising process, the supply of the processing fluid from the second fluid supply unit is stopped and the processing fluid is supplied from the first fluid supply unit into the processing container until at least the pressure within the processing container reaches the critical pressure. ... Tokyo Electron Limited

05/10/18 / #20180130670

Etching method

Disclosed is a method for etching an etching target layer which contains silicon and is provided with a metal-containing mask thereon. The method includes: generating plasma of a first processing gas containing a fluorocarbon gas in a processing container that accommodates the etching target layer and the mask to form a fluorocarbon-containing deposit on the mask and the etching target layer; and generating plasma of a second processing gas containing an inert gas in the processing container to etch the etching target layer by radicals of the fluorocarbon contained in the deposit. ... Tokyo Electron Limited

05/10/18 / #20180130669

Self-limiting cyclic etch method for carbon-based films

Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.. ... Tokyo Electron Limited

05/10/18 / #20180130645

Heat transfer medium system and substrate processing apparatus

A heat transfer medium supply system includes valve units each alternately supplying a first and a second heat transfer medium to a corresponding zone of a stage. The valve unit includes a housing and a shaft. ... Tokyo Electron Limited

05/10/18 / #20180127880

Microwave plasma source and microwave plasma processing apparatus

Disclosed is a microwave plasma source including a microwave generator that generates microwaves; a waveguide that propagates the microwaves in a te mode; a microwave converter including a conversion port that converts a vibration mode of the microwaves guided from the waveguide from the te mode into a tem mode, and a coaxial waveguide that propagates the microwaves from the conversion port toward the chamber and converts a remaining te mode component into the tem mode during the propagation; a planar antenna including a plurality of slots that radiate the microwaves guided to the coaxial waveguide toward the chamber; and a microwave transmitting plate made of a dielectric material that transmits the microwaves radiated from the plurality of slots of the planar antenna to the chamber. A length of the coaxial waveguide is equal to or longer than a wavelength of the microwaves generated from the microwave generator.. ... Tokyo Electron Limited

05/03/18 / #20180122641

Substrate processing method

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.. ... Tokyo Electron Limited

05/03/18 / #20180122637

Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures

A method of preparing a self-aligned block (sab) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. ... Tokyo Electron Limited

05/03/18 / #20180122620

Plasma processing apparatus

Processing gases respectively supplied from multiple gas supply lines into a processing vessel can be switched at a high speed in a uniform manner. A plasma processing apparatus includes the processing vessel configured to perform therein a plasma process to a target substrate; and a gas inlet member including first gas discharge holes and second gas discharge holes which are alternately arranged to be adjacent to each other and respectively communicate with a first gas supply line and a second gas supply line, which are switchable. ... Tokyo Electron Limited

05/03/18 / #20180120216

Particulate measurement device

A particulate measurement device includes: a nozzle which discharges liquid from an opening to form a flow of the liquid; a light emitter which emits light such that the light propagates in a region where the flow of the liquid is formed; a photodetector provided outside the region to receive the light from a partial region extending along a longitudinal direction of the region; and an air flow forming unit which forms a flow of gas along a direction in which the liquid flows, on an outer periphery of the region.. . ... Tokyo Electron Limited

04/19/18 / #20180108544

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.. . ... Tokyo Electron Limited

04/19/18 / #20180108534

Method of forming titanium oxide film and method of forming hard mask

A method for forming a titanium oxide film on a substrate to be processed, which has a silicon portion on a surface thereof, the method including: forming a first titanium oxide film on the surface of the substrate to be processed, which includes the silicon portion, by means of thermal ald by alternately supplying a titanium-containing gas and a gas containing hydrogen and oxygen serving as an oxidizing agent in a first stage; and forming a second titanium oxide film on the first titanium oxide film by means of plasma ald by alternately supplying a titanium-containing gas and plasma of an oxygen-containing gas as an oxidizing agent in a second stage.. . ... Tokyo Electron Limited

04/19/18 / #20180108518

Film forming apparatus, cleaning method for film forming apparatus and recording medium

A film forming apparatus 1 includes a plasma generating mechanism 47 commonly used for plasmarizing a processing gas and a cleaning gas supplied into a processing vessel 11 in which a vacuum atmosphere is formed; an exhaust device 17 configured to evacuate an exhaust line 61 connected to a processing gas discharge unit 43 while the plasmarization of the cleaning gas is being performed by the plasma generating mechanism 47; a tank 62 provided at the exhaust line 61; and a valve v2 which is provided at the exhaust line 61 between the tank 62 and the processing gas discharge unit 43. The valve v2 is configured to be closed to reduce an internal pressure of the tank 62 and opened to attract the plasmarized cleaning gas into the tank 62 from a processing space 40 through the processing gas discharge unit 43.. ... Tokyo Electron Limited

04/19/18 / #20180108516

Ion beam irradiation apparatus and substrate processing apparatus

Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. ... Tokyo Electron Limited

04/19/18 / #20180108515

Plasma process apparatus

A plasma process apparatus that utilizes plasma so as to perform a predetermined process on a substrate, and includes a process chamber that houses a substrate subjected to the predetermined plasma process; a microwave generator; a dielectric window attached to the process chamber and provided with a concave portion provided at an outer surface of the dielectric window opposite to the process chamber and a through hole penetrating the dielectric window to the process chamber; a microwave transmission line; and a first process gas supplying portion including a gas conduit including a first portion provided at a front end and a second portion having a larger diameter than the first portion, the gas conduit being inserted from outside of the process chamber such that the first portion is inserted in the through hole and the second portion is inserted in the concave portion.. . ... Tokyo Electron Limited

04/19/18 / #20180107637

Semiconductor system and method for supporting data editing

A semiconductor system according to the present disclosure includes: an input receiving unit that receives comparison process requesting information; a processing unit that acquires a plurality of pieces of process related information related to a semiconductor process performed by a semiconductor manufacturing apparatus, based on the comparison process requesting information received by the input receiving unit; a screen creation unit that creates a comparison screen for comparing the plurality of pieces of process related information acquired by the processing unit; and a display unit that displays the comparison screen created by the screen creation unit. When the input receiving unit receives a selection of an arbitrary item included in the plurality of pieces of process related information displayed on the comparison screen, the screen creation unit creates an editing screen on which, among the plurality of pieces of process related information, process related information including the arbitrary item is editable.. ... Tokyo Electron Limited

04/19/18 / #20180106247

Method of determining output flow rate of gas output by flow rate controller of substrate processing apparatus

In a method of an embodiment, a pressure sensor is selected from first and second pressure sensors according to a set flow rate. A measurable maximum pressure of the second pressure sensor is higher than a measurable maximum pressure of first pressure sensor. ... Tokyo Electron Limited

04/12/18 / #20180102267

Temperature controlling apparatus, temperature controlling method, and placing table

Provided is a temperature controlling apparatus in which the accuracy of the temperature control of a processing target substrate is maintained high even when heaters are disconnected. The temperature controlling apparatus includes an electronic chuck, a plurality of heaters, and a controller. ... Tokyo Electron Limited

04/12/18 / #20180102265

Hot plate with programmable array of lift devices for multi-bake process optimization

Embodiments of systems and methods for substrate thermal processing using a hot plate with a programmable array of lift devices for multi-bake process optimization are presented. In an embodiment, an apparatus includes a base with an upper surface configured to receive the substrate. ... Tokyo Electron Limited

04/12/18 / #20180102244

Film forming method

A film forming method of forming a film containing a metal element on a substrate using a source gas containing the metal element and a reactant gas that reacts with the source gas, which includes: forming a lower layer film containing the metal element on a surface of the substrate through a plasma cvd process by supplying the source gas into a process container and plasmarizing the source gas; and subsequently, laminating an upper layer film containing the metal element on the lower layer film by a plasma ald process which alternately performs an adsorption step of supplying the source gas into the process container to adsorb the source gas onto the surface of the substrate with the lower layer film formed thereon, and a reaction step of supplying the reactant gas into the process container and plasmarizing the reactant gas.. . ... Tokyo Electron Limited

04/05/18 / #20180097205

Reduced-pressure drying apparatus

A reduced-pressure drying apparatus, for drying solution on a substrate in a chamber in a depressurized state, includes a solvent collecting unit that is a net-shaped plate configured to temporarily collect a solvent in the solution vaporized from the substrate. The solvent collecting unit is provided to face the substrate in the chamber, and the net-shaped plate has an opening ratio of 60% to 80% and a thermal capacity of 850 j/k or less per 1 m2.. ... Tokyo Electron Limited

04/05/18 / #20180096905

Facilitation of spin-coat planarization over feature topography during substrate fabrication

Described herein are technologies to facilitate device fabrication, especially those that involve spin-on coatings of a substrate (e.g., wafer). More particularly, technologies described herein facilitate the planarization (i.e., flatness) of spin-on coatings during the device fabrication to form a uniformly planar film or layer on the substrate. ... Tokyo Electron Limited

04/05/18 / #20180096866

Substrate processing apparatus

A substrate processing apparatus includes processing parts performing substrate processing on target substrates, respectively, substrate mounting tables mounting the target substrates thereon in the respective processing parts, gas introducing members introducing processing gases into processing spaces, a common exhaust mechanism evacuating the processing spaces at once and further performing pressure control for the processing spaces at once, and a pressure measuring part configured to selectively monitor a pressure in any one of the plurality of processing spaces by using a pressure gauge. The pressure measuring part includes pipelines having pressure-measuring pipelines configured to connect the processing spaces to the pressure gauge and dummy pipelines configured to communicate with the processing spaces, which adjust a difference between a volume of the pipelines communicating with a monitored processing space of the processing spaces and a volume of the pipelines communicating with each of non-monitored processing spaces.. ... Tokyo Electron Limited

04/05/18 / #20180096863

Substrate processing method, substrate processing apparatus, and storage medium

Disclosed is a substrate liquid processing method including: a first processing step of discharging a fluid in the processing container until an inside of the processing container reaches a first discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a first supply ultimate pressure at which vaporization of the processing fluid does not occur; and a second processing step of discharging a fluid in the processing container until the inside of the processing container reaches a second discharge ultimate pressure at which the processing fluid in the supercritical state is not vaporized, and then supplying the processing fluid into the processing container until the inside of the processing container reaches a second supply ultimate pressure at which vaporization of the processing fluid does not occur.. . ... Tokyo Electron Limited

04/05/18 / #20180096855

Substrate liquid treatment apparatus, substrate liquid treatment method and storage medium

A substrate liquid treatment method in one embodiment includes, storing a phosphoric acid solution in a processing bath provided in a liquid treatment unit, and immersing a substrate into the stored phosphoric acid solution to process the substrate, draining a phosphoric acid solution at a first drainage flow rate from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a first time period in which the substrate is immersed in the phosphoric acid solution in the processing bath, and draining a phosphoric acid solution at a second drainage flow rate different from the first drainage flow rate, from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a second time period in which the substrate is immersed in the phosphoric acid solution in the processing bath.. . ... Tokyo Electron Limited

04/05/18 / #20180096827

Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (rf) generator generates an rf signal that is distributed to one or more plasma sources within a process chamber. ... Tokyo Electron Limited

04/05/18 / #20180096826

Plasma generating apparatus, plasma processing apparatus, and method of controlling plasma generating apparatus

A plasma generating apparatus according to the present disclosure includes: a high frequency power supply that generates a high frequency power; a plasma generation electrode connected to the high frequency power supply and formed by a hollow tube in which cooling water is distributed; a conductivity meter that measures conductivity of the cooling water inside the plasma generation electrode; and a controller that controls output of the high frequency power supply based on the conductivity of the cooling water measured by the conductivity meter.. . ... Tokyo Electron Limited

04/05/18 / #20180096822

Plasma processing method and plasma processing apparatus

A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.. . ... Tokyo Electron Limited

04/05/18 / #20180095370

Auxiliary exposure apparatus and exposure amount distribution acquisition method

An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer, and includes: a first total reflection mirror configured to reflect the light from the laser light source toward the wafer; and an imaging device including a light receiving part configured to receive light after reflected by the wafer.. . ... Tokyo Electron Limited

04/05/18 / #20180095021

Particle collecting apparatus, particle collecting method, and particle collecting system

A particle collecting apparatus includes a cylindrical housing, a gap forming unit, a supply port and an intake port. The cylindrical housing has a closed top and an open bottom facing a target object. ... Tokyo Electron Limited

04/05/18 / #20180093205

Solution treatment apparatus and solution treatment method

A solution treatment apparatus connected to a supply nozzle that supplies a treatment solution to a substrate, includes: a supply pipeline connecting a treatment solution storage container and the supply nozzle; a filter apparatus provided in the supply pipeline; a pump on a secondary side of the filter apparatus; a circulation pipeline connecting a discharge side of the pump and an intake side of the filter apparatus; a supply control valve provided in the supply pipeline on a secondary side of the pump; a circulation control valve provided in the circulation pipeline; and a control unit, wherein the control unit opens the circulation control valve and drives the pump when supply of the treatment solution from the supply nozzle to the substrate is stopped by closing the supply control valve, to thereby circulate the treatment solution between the supply pipeline having the filter apparatus and the circulation pipeline.. . ... Tokyo Electron Limited

03/29/18 / #20180090446

Manufacturing method of nickel wiring

There is provided a method for manufacturing ni wiring. The method includes forming an ni film on a surface of a substrate having a recess formed thereon by cvd or ald by using an ni compound as a film forming material and nh3gas and h2 gas as reduction gases to partially fill the recess. ... Tokyo Electron Limited

03/29/18 / #20180090361

Mounting table and plasma processing apparatus

A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.. ... Tokyo Electron Limited

03/29/18 / #20180090354

Position detection system and processing apparatus

There is provided a position detection system for use in a processing apparatus including a mounting table configured to mount thereon a disc-shaped target object and a focus ring surrounding a periphery of the mounting table. The system includes a light source configured to generate measurement light, three or more optical elements configured to emit the measurement light as emission light and receive reflected light, a driving unit configured to move each of the optical elements such that a scanning range from the focus ring to the target object is scanned, and a control unit configured to obtain positional relation between the focus ring and the target object based on the reflected light in the scanning range of each of the optical elements.. ... Tokyo Electron Limited

03/29/18 / #20180090319

Hard mask and manufacturing method thereof

There is provided a hard mask used in forming a recess having a depth of 500 nm or more by dry etching. The hard mask includes a boron-based film formed as an etching mask on a film including a sio2 film. ... Tokyo Electron Limited

03/29/18 / #20180090311

Boron film, boron film forming method, hard mask, and hard mask manufacturing method

There is provided a boron film forming method which includes forming a boron film on a target substrate by cvd by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron and inevitable impurities and used for a semiconductor device.. . ... Tokyo Electron Limited

03/29/18 / #20180090306

Substrate processing apparatus and processing liquid supply method

A substrate processing apparatus includes a processing liquid supply mechanism 70 configured to supply a spm liquid to a substrate; a temperature adjusting unit (heater) 303 configured to adjust a temperature of the spm liquid at a time when the spm liquid is supplied to the substrate from the processing liquid supply mechanism 70; an acquisition unit (temperature sensor) 80 configured to acquire temperature information of the spm liquid on a surface of the substrate; and a control unit 18 configured to set an adjustment amount of the temperature adjusting unit (heater) 303 based on the temperature information of the spm liquid acquired by the acquisition unit (temperature sensor) 80. The temperature adjusting unit (heater) 303 adjusts, based on the adjustment amount set by the control unit 18, the temperature of the spm liquid at the time when the spm liquid is supplied to the substrate.. ... Tokyo Electron Limited

03/29/18 / #20180090301

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.. . ... Tokyo Electron Limited

03/29/18 / #20180088466

Coating and developing method and coating and developing apparatus

A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.. . ... Tokyo Electron Limited

03/29/18 / #20180087156

Gas introduction mechanism and processing apparatus

A gas introduction mechanism includes a manifold disposed in a process vessel and having an injector support part extending vertically along an inner wall surface of the process vessel and having an insertion hole, and a gas introduction part having a gas flow passage which protrudes outward from the injector support part and which communicates with the insertion hole and an outside of the process vessel so that a gas can flow through the insertion hole and the outside of the process vessel, an injector inserted and fitted into the insertion hole to be supported by the insertion hole, and extending linearly entirely within the injector along the inner wall surface and has an opening communicating with the gas flow passage at a position inserted into the insertion hole, and a rotation mechanism connected to a lower end portion of the injector to rotate the injector.. . ... Tokyo Electron Limited

03/29/18 / #20180085769

Substrate processing apparatus and substrate processing method

A substrate processing apparatus according to the present disclosure includes a holding unit, a nozzle, a driving unit, and a controller. The holding unit holds a substrate. ... Tokyo Electron Limited

03/22/18 / #20180082903

Method of patterning intersecting structures

Provided is a method of patterning structures on a substrate using an integration scheme in a patterning system, the method comprising: disposing a substrate in a processing chamber, the substrate having a plurality of structures and a pattern, the substrate including an underlying layer and a target layer, at least one structure intersecting with another structure, each intersection having an intersection angle and a corner, the integration scheme requiring a vertical corner profile at each intersection; alternatingly and sequentially etching and cleaning the substrate to transfer the pattern onto the target layer and to achieve a target vertical corner profile at each intersection; controlling selected two or more operating variables of the integration scheme in the alternating and sequential etching and cleaning operations in order to achieve target integration objectives.. . ... Tokyo Electron Limited

03/22/18 / #20180082881

Substrate processing apparatus and method of transferring substrate

There is provided a substrate processing apparatus having a transfer arm configured to transfer two substrates between a transfer chamber and a processing chamber having two mounting tables, the transfer arm holding the two substrates in a state where the two substrates overlap each other with a gap between the two substrates. The substrate processing apparatus includes: a lower substrate detection sensor configured to detect an edge portion of a lower substrate when the lower substrate is transferred; and an upper substrate detection sensor configured to detect an edge portion of an upper substrate when the upper substrate is transferred.. ... Tokyo Electron Limited

03/22/18 / #20180082875

Substrate processing apparatus and substrate transfer method

A substrate processing apparatus includes: a substrate conveyance area; a substrate storage conveyance area; a substrate storage storing shelf; a first purge gas supply unit that supplies a purge gas into the substrate storage on the substrate storage storing shelf; an integrated flow rate acquiring unit that acquires an integrated flow rate of the purge gas supplied into the substrate storage; a transfer and placement unit; a second purge gas supply unit that supplies a purge gas into the substrate storage placed on the transfer and placement unit; a substrate transfer unit that transfers the substrate into the substrate conveyance area when the substrate storage is opened; and a controller that calculates an oxygen concentration within the substrate storage based on the integrated flow rate of the purge gas, and transfers the substrate to the substrate conveyance area when the oxygen concentration is a threshold value or less.. . ... Tokyo Electron Limited

03/22/18 / #20180082851

Spacer formation for self-aligned multi-patterning technique

Embodiments of systems and methods for spacer formation for samp techniques are described. In an embodiment a method includes providing a substrate with a spacer having a conformal coating. ... Tokyo Electron Limited

03/22/18 / #20180082842

Method of in situ hard mask removal

Systems and methods for in situ hard mask removal are described. In an embodiment, a method includes receiving a semiconductor workpiece comprising a substrate, an intermediary layer, a hard mask layer, and a photoresist layer in an etch chamber. ... Tokyo Electron Limited

03/22/18 / #20180082833

Back-side friction reduction of a substrate

A processing chamber system includes a substrate mounting module configured to secure a substrate within a first processing chamber. The system also includes a first deposition module configured to apply a light-sensitive film to a front side surface of the substrate, and a second deposition module configured to apply a film layer to a backside surface of the substrate. ... Tokyo Electron Limited

03/22/18 / #20180082831

Substrate processing apparatus and substrate processing method

In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.. . ... Tokyo Electron Limited

03/22/18 / #20180082823

Method of etching porous film

A method of etching a porous film is provided. The method includes supplying a first gas into a processing chamber of a plasma processing apparatus in which an object to be processed including a porous film is accommodated, and generating a plasma of a second gas for etching the porous film in the processing chamber. ... Tokyo Electron Limited

03/22/18 / #20180080123

Film deposition method and computer program storage medium

A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.. . ... Tokyo Electron Limited

03/15/18 / #20180076087

Film forming method and film forming system

In a film forming method for forming a cobalt film on a target substrate having a recess formed in a surface thereof to fill the recess with the cobalt film, the recess is partially filled by forming a cobalt film on the target substrate by an ald method or a cvd method using an organic metal compound gas. The cobalt film is partially etched by supplying an etching gas containing β-diketone gas and no gas to the target substrate. ... Tokyo Electron Limited

03/15/18 / #20180076066

Substrate processing method, substrate processing system and substrate processing apparatus

A technique enabling a stable resist pattern forming process, when substrate processing apparatuses that perform a resist coating process separately from a developing process. A wafer having been heated after a resist coating process in a first substrate processing apparatus is also heated before an exposure process in a second substrate processing apparatus. ... Tokyo Electron Limited

03/15/18 / #20180076057

Substrate processing apparatus and substrate processing method

A substrate processing apparatus 1 is configured to supply a processing liquid to a peripheral portion of a wafer w being rotated. The substrate processing apparatus 1 includes a rotating/holding unit 21 configured to rotate and hold the wafer w; a processing liquid discharging unit 73 configured to discharge the processing liquid toward the peripheral portion of the wafer w held by the rotating/holding unit 21; a variation width acquiring unit configured to acquire information upon a variation width of a deformation amount of the peripheral portion of the wafer w; and a discharge controller 7 configured to control a discharge angle and a discharge position of the processing liquid from the processing liquid discharging unit 73 onto the peripheral portion based on the information upon the variation width of the deformation amount of the peripheral portion acquired by the variation width acquiring unit.. ... Tokyo Electron Limited








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