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Tokyo Electron Limited patents


Recent patent applications related to Tokyo Electron Limited. Tokyo Electron Limited is listed as an Agent/Assignee. Note: Tokyo Electron Limited may have other listings under different names/spellings. We're not affiliated with Tokyo Electron Limited, we're just tracking patents.

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Interface apparatus, interface unit, probe apparatus, and connection method

In an interface apparatus, when a load is applied to a base member and a connector part is pushed onto an external connector, a spring contracts so that an interval between the base member and a holder is reduced. An inclined surface of a coupling member is separated from an inclined surface of the holder so that fixing of the holder by the coupling member is released and the coupling member can move freely inside a hollow section. ... Tokyo Electron Limited

Substrate processing apparatus

A substrate processing apparatus includes a process chamber, a stage that is disposed in the process chamber and on which a substrate is placeable, a moving mechanism, and a focus ring. The focus ring is disposed on the stage and includes an inner focus ring disposed close to the substrate placed on the stage, a middle focus ring that is disposed outside of the inner focus ring and is movable in a vertical direction by the moving mechanism, and an outer focus ring that is disposed outside of the middle focus ring.. ... Tokyo Electron Limited

Heating method, film forming method, semiconductor device manufacturing method, and film forming apparatus

There is provided heating method for heating a substrate having a germanium film or a silicon germanium film formed on a surface of the substrate, the method including: loading the substrate kept in an air atmosphere at least a predetermined time into a processing container; and heating the substrate in a state in which an interior of the processing container is kept in a hydrogen gas-containing atmosphere.. . ... Tokyo Electron Limited

Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures

A method of preparing a self-aligned block (sab) structure is described. The method includes providing a substrate having raised features defined by a first material containing silicon nitride and a second material containing silicon oxide formed on side walls of the first material, and a third material containing an organic material covering some of the raised features and exposing some raised features according to a block pattern formed in the third material. ... Tokyo Electron Limited

Method of quasi-atomic layer etching of silicon nitride

A method of etching is described. The method includes providing a substrate having a first material containing silicon nitride and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing h and optionally a noble gas, and exposing the first material on the substrate to the first chemical mixture. ... Tokyo Electron Limited

Plasma processing apparatus

A microwave generator of a plasma processing apparatus of an embodiment includes a first module, a second module, and a combiner. The first module includes a distributor which distributes a high-frequency electric signal, and outputs a plurality of high-frequency electric signals. ... Tokyo Electron Limited

Plasma generation method, plasma processing method using the same and plasma processing apparatus

A plasma generation method is provided to generate and maintain plasma by supplying a predetermined power that is lower than a normal power to a plasma generator. Plasma of an ignition gas is generated by supplying the normal power to the plasma generator. ... Tokyo Electron Limited

Wafer inspection method and wafer inspection device

Provided is a wafer inspection method wherein a chuck top can be properly received. When an aligner receives a chuck top after a wafer w has been inspected, the distance between the chuck top and a chuck base is adjusted by adjusting the inclination of the chuck base such that the chuck top height, which is the distance between the chuck top and the chuck base after the chuck top is held, is a height in which any of 0 to 200 μm is added to the chuck top height before the chuck top is held.. ... Tokyo Electron Limited

Gas supply member and gas processing apparatus

A gas supply member includes a straight flow path having a straight-line shape and a first end to be supplied with a gas, a gas discharge port branched from the straight flow path and a gas circulation path extending along an extension line of the straight flow path, connected to a second end of the straight flow path, and configured to collect foreign substances contained in the gas supplied to the straight flow path.. . ... Tokyo Electron Limited

Surface modification control for etch metric enhancement

A method is disclosed for monitoring and controlling a process of plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a plasma processing system, igniting a plasma in the plasma processing chamber to initiate a surface modification process for a layer formed on a substrate, and acquiring optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber, during the surface modification process for the layer. ... Tokyo Electron Limited

Method for processing target object

In a method for processing a target object including a conductive layer and an insulating film formed on the conductive layer, the insulating film is etched by plasma treatment of a fluorine-containing gas to form an opening in the insulating film. A barrier film is formed to cover a surface of the insulating film and a surface of the conductive layer which is exposed through the opening formed in the insulating film. ... Tokyo Electron Limited

Substrate processing method, substrate processing apparatus and recording medium

A plasma processing method includes etching a removing target film by supplying onto a peripheral portion of a substrate being rotated a first processing liquid containing hydrofluoric acid and nitric acid at a first mixing ratio; and etching the removing target film by, after supplying the first processing liquid onto the substrate, supplying onto the peripheral portion of the substrate being rotated a second processing liquid containing the hydrofluoric acid and the nitric acid at a second mixing ratio in which a content ratio of the hydrofluoric acid is lower and a content ratio of the nitric acid is higher than in the first processing liquid. When removing the removing target film made of sige, amorphous silicon or polysilicon from the peripheral portion thereof, an underlying film, for example, a film made of sio2, which exists under the removing target film, can be appropriately left.. ... Tokyo Electron Limited

Substrate processing method and computer storage medium

A substrate processing method of processing a substrate using a block copolymer containing a hydrophilic polymer and a hydrophobic polymer, the substrate processing method includes: a block copolymer coating step of applying the block copolymer onto the substrate on which a predetermined projecting and recessed pattern is formed, to form a coating film of the block copolymer; a polymer separation step of phase-separating the block copolymer into the hydrophilic polymer and the hydrophobic polymer; a polymer removal step of selectively removing the hydrophilic polymer from the phase-separated block copolymer; and after the block copolymer coating step and before the polymer removal step, a film thickness reduction step of reducing a film thickness of the coating film of the block copolymer.. . ... Tokyo Electron Limited

Method of manufacturing semiconductor device and vacuum processing apparatus

A method for manufacturing a semiconductor device by processing a substrate, the method includes forming a first film of a polymer having urea bonds by supplying a polymerization raw material to a surface of the substrate, subsequently, forming a pattern by etching the first film, and subsequently, forming a second film of a material different from the polymer of the first film by performing a substitution processing to the first film by supplying a reaction gas, which reacts with the polymerization raw material to generate a product, to the substrate while heating the substrate to depolymerize the polymer.. . ... Tokyo Electron Limited

09/20/18 / #20180269041

Self-sustained non-ambipolar direct current (dc) plasma at low power

A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. ... Tokyo Electron Limited

09/20/18 / #20180267512

Device for controlling substrate processing apparatus and method for displaying substrate processing

A device controls a substrate processing apparatus that includes process modules for processing substrates. The device includes a memory that stores a program, and a processor that executes the program stored in the memory to perform a process. ... Tokyo Electron Limited

09/20/18 / #20180265974

Substrate processing apparatus and method

In a substrate processing method for processing a substrate by alternately performing a processing gas supply step of supplying a processing gas for processing the substrate into a processing chamber which accommodates the substrate and to which a gas exhaust line is connected and a replacement gas supply step of supplying a replacement gas for replacing an atmosphere in the processing chamber into the processing chamber multiple times, a ballast gas is introduced into the gas exhaust line when the processing gas supply step is performed.. . ... Tokyo Electron Limited

09/20/18 / #20180264516

Film forming apparatus, film forming method, and storage medium

A film forming apparatus includes: a film forming gas discharge part; an exhaust port; a rotation mechanism; a heating part configured to heat the interior of a reaction container to a temperature lower than a temperature of a film forming gas discharged from the film forming gas discharge part; first gas discharge holes opened, in the film forming gas discharge part, toward a gas temperature reducing member so that the film forming gas is cooled by colliding with the gas temperature reducing member inside the reaction container before the film forming gas is supplied to substrates; and second gas discharge holes opened, in the film forming gas discharge part, in a direction differing from an opening direction of the first gas discharge holes so that the film forming gas does not collide with the gas temperature reducing member before the film forming gas is supplied to the substrates.. . ... Tokyo Electron Limited

09/20/18 / #20180264504

Substrate processing apparatus and substrate processing method

Provided is a substrate processing apparatus in which a drying process of drying a substrate using a processing fluid in a supercritical state is performed. The substrate processing apparatus includes: a processing container in which the drying process is performed; a discharge valve provided in a discharge flow path that discharges the processing fluid from the processing container; and a controller configured to control the discharge valve. ... Tokyo Electron Limited

09/20/18 / #20180264492

Substrate processing method

Productivity can be improved. A substrate processing method includes a processing liquid supplying process of supplying a processing liquid, which contains a volatile component and forms a film on a substrate, onto the substrate on which a pre-treatment, which requires atmosphere management or time management after the pre-treatment, is performed; and an accommodating process of accommodating, in a transfer container, the substrate on which the processing liquid is solidified or cured by volatilization of the volatile component.. ... Tokyo Electron Limited

09/06/18 / #20180254222

Substrate processing system, control device, and substrate processing method

Disclosed is a substrate processing system capable of performing an etching processing collectively on a plurality of substrates accommodated in a processing container. The system includes: a first acquisition unit which acquires, as information, an amount of a film forming material formed on one of the substrates; a second acquisition unit which acquires, as information, the number of the substrates; a first calculating unit which calculates a total amount of the film forming material formed on the substrates based on the amount of the film forming material and the number of the substrates; and a second calculating unit which calculates an etching condition required to etch and remove the entire film forming material based on the total amount of the film forming materials and a relationship between a predetermined amount of the film forming material and an etching condition.. ... Tokyo Electron Limited

09/06/18 / #20180254205

Substrate heating device, substrate heating method and computer-readable storage medium

A substrate heating device includes: heating modules each having a processing vessel within which a heating plate is disposed, an gas inlet port for introducing a purge gas into a processing atmosphere, and an exhaust port for exhausting the processing atmosphere; individual exhaust paths each connected to the exhaust port of the heating modules; a common exhaust path connected to downstream ends of the individual exhaust paths of the heating modules; a branch path branched from the individual exhaust paths and opened to the outside of the processing vessel; and an exhaust flow rate adjusting unit configured to adjust a flow rate ratio of an exhaust flow rate of a gas exhausted from the exhaust port into the common exhaust path and an introduction flow rate of a gas introduced from the outside of the processing vessel into the common exhaust path through the branch path.. . ... Tokyo Electron Limited

09/06/18 / #20180254202

Dispense nozzle with a shielding device

Provided is a nozzle system for dispensing a dispense chemical onto a substrate, the system comprising: a nozzle comprising a nozzle body and a nozzle tip; a shielding device coupled to the nozzle tip, the shielding device configured to create a mini-environment for a dispense chemical such that a partial pressure of the dispense chemical is maintained in the shielding device; wherein the nozzle system is configured to meet selected dispense objectives.. . ... Tokyo Electron Limited

09/06/18 / #20180254200

Substrate processing apparatus

A substrate processing apparatus according to an exemplary embodiment to the present disclosure includes: a main body which has therein a processing space capable of accommodating the substrate; a holding unit which holds the substrate in the main body; a supply unit which is provided at a side of the substrate held by the holding unit and supplies the processing fluid into the processing space; a discharge unit which discharges the processing fluid from an inside of the processing space; and a flow path limiting unit which limits a lower end of a flow path at an upstream side which is formed while the processing fluid flows from the supply unit to the discharge unit. Further, an upper end of the flow path limiting unit is disposed at a position higher than the upper surface of the substrate held by the holding unit.. ... Tokyo Electron Limited

09/06/18 / #20180254199

Substrate processing apparatus and substrate processing method

A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.. ... Tokyo Electron Limited

09/06/18 / #20180254191

Process for performing self-limited etching of organic materials

A method and apparatus for selectively etching an organic material on a substrate is described. The method and apparatus includes forming a first plasma-excited process gas containing hydrogen (h) and optionally a noble gas element, exposing the substrate to the first plasma-excited process gas, forming a second plasma-excited process gas containing a noble gas element, exposing the substrate to the second plasma-excited process gas, and cyclically repeating the forming and exposing the first and second plasma-excited process gases at least two cycles to etch the first material selectively relative to the second material.. ... Tokyo Electron Limited

09/06/18 / #20180254181

Method of manufacturing ruthenium wiring

A first aspect of the present disclosure provides a ruthenium wiring manufacturing method of manufacturing a ruthenium wiring by filling a recess, with respect to a substrate including a predetermined film having the recess formed in a surface thereof. The method includes: embedding a first ruthenium film in the recess by forming the first ruthenium film by cvd using a ruthenium raw material gas; forming an additional layer by forming a second ruthenium film on the first ruthenium film embedded in the recess by cvd using the ruthenium raw material gas at a film forming rate higher than that at a time of embedding; and flattening the second ruthenium film and the first ruthenium film by removing the second ruthenium film and the first ruthenium film on the substrate surface by cmp.. ... Tokyo Electron Limited

09/06/18 / #20180254180

Substrate processing apparatus and substrate processing method

A substrate processing apparatus of an exemplary embodiment includes a liquid processing unit, a detection unit, and a post-processing unit. The liquid processing unit supplies a liquid to a substrate to form a liquid film on the substrate. ... Tokyo Electron Limited

09/06/18 / #20180253007

Substrate processing apparatus, substrate processing method and storage medium

A substrate processing method, includes acquiring a height distribution along a radial direction of a substrate in a peripheral edge portion of a front surface of the substrate, forming an underlayer film on the entire front surface of the substrate so as to correct a drop of a height of the peripheral edge portion based on the height distribution, and forming a resist film on the entire surface of the underlayer. . ... Tokyo Electron Limited

09/06/18 / #20180252650

Computed tomography using intersecting views of plasma using optical emission spectroscopy during plasma processing

Described herein are technologies to facilitate computed tomographic techniques to help identifying chemical species during plasma processing of a substrate (e.g., semiconductor wafer) using optical emission spectroscopy (oes). More particularly, the technology described herein uses topographic techniques to spatially resolves emissions and absorptions in at least two-dimension space above the substrate during the plasma processing (e.g., etching) of the substrate. ... Tokyo Electron Limited

09/06/18 / #20180251898

Gas supply device, gas supply method and film forming method

There is provided a gas supply device for vaporizing a raw material inside a raw material container and supplying a raw material gas into a processing vessel together with a carrier gas, including: a mass flow controller connected to an upstream side of the raw material container and configured to control a flow rate of the carrier gas; a flow meter connected to a downstream side of the raw material container; and a control part configured to perform a control so as not to supply the raw material gas into the processing vessel until a detection value of the flow meter with respect to the carrier gas controlled to have a constant flow rate by the mass flow controller is stabilized after replacing the raw material container.. . ... Tokyo Electron Limited

09/06/18 / #20180251895

Plasma processing apparatus

In a plasma processing apparatus for generating a plasma in a processing space of a processing chamber and performing plasma processing on a target object, the apparatus includes an antenna configured to radiate a microwave for plasma generation into the processing chamber through a ceiling plate. The plasma processing apparatus further includes a pressing mechanism provided above the antenna and configured to press the antenna against the ceiling plate by a pressure of fluid suppled thereinto.. ... Tokyo Electron Limited

09/06/18 / #20180251894

Gas supply device, gas supply method and film forming method

A gas supply device for vaporizing a raw material inside a raw material container and supplying a raw material gas into a processing container together with a carrier gas, which includes: a buffer tank provided between the raw material container and the processing container; an evac line for exhausting interiors of the buffer tank and the raw material container; a memory part that stores a first internal pressure of the buffer tank when a process is performed by supplying the raw material gas into the processing container; and a control part configured to control a flow rate of a gas exhausted to the evac line and a flow rate of the raw material gas and the carrier gas filled in the buffer tank, so that a second internal pressure of the buffer tank becomes equal to the first internal pressure before supplying the raw material gas into the processing container.. . ... Tokyo Electron Limited

09/06/18 / #20180251892

Rotation detection jig, substrate processing apparatus and method of operating the substrate processing apparatus

There is provided a rotation detection jig used for an apparatus in which a substrate is processed inside a processing container by rotating a mounting stand for a substrate provided on one surface side of a rotary table while revolving the mounting stand with rotation of the rotary table, and supplying a processing gas to a region through which the mounting stand passes, including: a rotating element configured to rotate about a rotation shaft of the mounting stand; an encoder main body configured to detect a rotation angle of the rotating element and configured to constitute a rotary encoder together with the rotating element; a fixing member configured to fix the encoder main body to a rotating portion including the rotary table; and a signal processing part provided in the rotating portion and configured to process a detection signal detected by the encoder main body.. . ... Tokyo Electron Limited

09/06/18 / #20180251891

Vaporizer, film forming apparatus, and temperature control method

A vaporizer includes: a gas-liquid mixer for mixing a solution containing a precursor and a carrier gas; a nozzle for injecting the mixed solution; a vaporization chamber in which the injected solution is vaporized; a first temperature-adjustment-mechanism for adjusting a chamber temperature of the vaporization chamber; a second temperature-adjustment-mechanism for adjusting a mixing temperature of the gas-liquid mixer; a third temperature-adjustment-mechanism for adjusting a nozzle temperature of the nozzle; and a control device for controlling the first temperature-adjustment-mechanism to adjust the chamber temperature to a first temperature higher than a vaporization temperature of the precursor, for controlling the second temperature-adjustment-mechanism to adjust the mixing temperature to a second temperature lower than the first temperature, and for controlling the third temperature-adjustment-mechanism to adjust the nozzle temperature to a third temperature ranging from the first temperature to the second temperature and lower than a vaporization temperature of a solvent of the solution.. . ... Tokyo Electron Limited

08/23/18 / #20180240802

Three-dimensional semiconductor device and method of fabrication

A 3-d ic includes a substrate having a substrate surface. A first semiconductor device has a first electrical contact and is formed in a first area of the surface on a first plane substantially parallel to the substrate surface. ... Tokyo Electron Limited

08/23/18 / #20180240720

Facilitation of orthotopic patterns during substrate fabrication

Described herein are technologies to facilitate the fabrication of substrates, such as semiconductor wafers. More particularly, technologies described herein facilitate the correct placement of patterns of lines and spaces on a substrate. ... Tokyo Electron Limited

08/23/18 / #20180240695

Substrate transfer device, substrate transfer method and recording medium

A device includes a substrate holding unit 25 configured to hold a substrate and be movable in a transversal direction to transfer the substrate from one module to another module; a first detecting unit 3 configured to detect a position of the substrate on the substrate holding unit 25 before the substrate holding unit 25 transfers the substrate into the another module after receiving the substrate from the one module; second detecting units 55 and 56 configured to detect a position deviation between a position of the substrate holding unit 25, which is located at a temporary position set to transfer the substrate into the another module, and the temporary position; and a position determining unit 10 configured to determine a transfer position where the substrate is transferred into the another module based on the position of the substrate on the substrate holding unit 25 and the position deviation.. . ... Tokyo Electron Limited

08/23/18 / #20180240684

Substrate processing apparatus and substrate processing method

A gas discharge hole 74 (205) configured to discharge a gas is provided at a position outside an edge of a substrate w held by a substrate holding unit 89 (204) within a processing chamber 81 (201). The gas discharged from the gas discharge hole 74 (205) forms a flow of the gas flowing in a direction along a first surface (front surface) of the substrate held by the substrate holding unit. ... Tokyo Electron Limited

08/23/18 / #20180240651

Focus ring and plasma processing apparatus

A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. ... Tokyo Electron Limited

08/23/18 / #20180240650

Plasma processing apparatus and upper electrode assembly

A plasma processing apparatus includes supporting members, connecting members and a sliding member. Each of the supporting members is partially disposed in a disc-shaped cooling plate and configured to support an upper electrode in a direction of gravity. ... Tokyo Electron Limited

08/23/18 / #20180239257

Process recipe evaluation method, storage medium, assisting device for process recipe evaluation, and liquid processing apparatus

A method for evaluating a process recipe used in a liquid processing apparatus that performs a liquid processing by supplying a processing liquid from a nozzle to a substrate while rotating a holding part horizontally holding the substrate about a vertical axis, includes: storing the process recipe in a first storage part, which includes time-series data of a first combination of parameter values including a position of the nozzle and a rotation speed of the substrate; reading the process recipe from the first storage part; reading a pre-prepared risk data from a second storage part, which is determined by associating a second combination of parameter values with a risk information corresponding to a liquid splash risk; and displaying an assisting data for the first combination of parameter values in the process recipe, based on the process recipe and the pre-prepared risk data read from the first and second storage parts.. . ... Tokyo Electron Limited

08/23/18 / #20180239244

Method for reducing lithography defects and pattern transfer

An additional non-photoresist layer may be formed on patterned photoresist layers. The additional layer may be preferentially formed on the tops of the photoresist layer versus the sidewalls of the photoresist layer. ... Tokyo Electron Limited

08/23/18 / #20180237914

Film forming apparatus

An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.. . ... Tokyo Electron Limited

08/23/18 / #20180237912

Film deposition method and film deposition apparatus

A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. ... Tokyo Electron Limited

08/23/18 / #20180237911

Film forming method

There is provided a film forming method of forming a metal film, which includes: alternately supplying a metal chloride gas and a reducing gas for reducing the metal chloride gas to a substrate arranged inside a processing vessel a plurality of times, wherein the alternately supplying the metal chloride gas and the reducing gas includes a period of time during which a flow rate of the metal chloride gas gradually increases.. . ... Tokyo Electron Limited

08/23/18 / #20180237905

Pressure control method

A pressure control method in a film forming apparatus having a plurality of incompletely partitioned processing regions in one vacuum container, includes a first adjustment step of adjusting an opening degree of an exhaust valve provided in each of the processing regions, on the basis of a target pressure and a target flow rate determined for each of the processing regions and learning information indicating a relationship between a flow rate, a pressure and an opening degree, and a second adjustment step of, after the first adjustment step, adjusting an opening degree of an exhaust valve provided in one of the processing regions, on the basis of a pressure in one of the processing regions.. . ... Tokyo Electron Limited

08/16/18 / #20180233707

Coating apparatus and coating method

Provided is a coating apparatus including: a stage unit which floats the substrate to a predetermined height by using wind pressure of gas; a droplet discharge unit which drops the droplet of the functional liquid on the substrate floated to the predetermined height from the stage unit; a main scanning direction moving unit which moves the substrate, which is floated to the predetermined height from the stage unit, in the main scanning direction while holding the substrate; and a sub-scanning direction moving unit which moves the droplet discharge unit in the sub-scanning direction with respect to the substrate floated to the predetermined height from the stage unit. The sub-scanning direction moving unit moves the droplet discharge unit in the sub-scanning direction while the main scanning direction moving unit repeatedly moves the substrate in the main scanning direction and the droplet discharge unit repeatedly drops the droplet.. ... Tokyo Electron Limited

08/16/18 / #20180233407

Method of forming a self-aligned contact using selective sio2 deposition

A substrate processing method for forming a self-aligned contact using selective sio2 deposition is described in various embodiments. The method includes providing a planarized substrate containing a dielectric layer surface and a metal-containing surface, coating the dielectric layer surface with a metal-containing catalyst layer, and exposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a sio2 layer on the metal-containing catalyst layer on the dielectric layer surface. ... Tokyo Electron Limited

08/16/18 / #20180233392

Substrate processing system and substrate transfer method

There is provided a substrate processing system, including: a carrier transfer region in which a carrier that accommodates a substrate is transferred to a substrate processing apparatus, and a substrate transfer region in which the substrate accommodated in the carrier is transferred to a processing furnace, the substrate transfer region being partitioned from the carrier transfer region by a partition wall; a transfer port formed in the partition wall and through which the substrate is transferred between the carrier transfer region and the substrate transfer region; an opening/closing door configured to open and close the transfer port; and a pressure equalizing part configured to substantially equalize a pressure of the substrate transfer region and a pressure of a space surrounded by the carrier and the opening/closing door.. . ... Tokyo Electron Limited

08/16/18 / #20180233384

Substrate liquid processing apparatus

A substrate liquid processing apparatus includes a processing tub 34 which is configured to store therein a processing liquid and in which a processing of a substrate is performed by immersing the substrate in the stored processing liquid; a circulation line 50 connected to the processing tub; a pump 51 provided at the circulation line and configured to generate a flow of the processing liquid flowing out from the processing tub and returning back to the processing tub after passing through the circulation line; and a heater 52 provided at the circulation line and configured to heat the processing liquid. At least two temperature sensors 81 to 83 are provided at different positions within a circulation system including the processing tub and the circulation line. ... Tokyo Electron Limited

08/16/18 / #20180233331

Plasma processing method and plasma processing apparatus

A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.. ... Tokyo Electron Limited

08/16/18 / #20180233328

Vacuum processing apparatus and maintenance apparatus

A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. ... Tokyo Electron Limited

08/16/18 / #20180231369

Temperature measuring method, substrate processing system and component to be provided in substrate processing apparatus of the substrate processing system

A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.. ... Tokyo Electron Limited

08/16/18 / #20180229246

Methods and systems for dielectrophoresis (dep) separation

One or more electrodes are attached to an electrically permeable substrate attached to an incubator and energized with a.c. Signals, d.c. ... Tokyo Electron Limited

08/09/18 / #20180226279

Plasma processing method

A plasma processing method of processing a processing target object, in which an organic film, a mask film and a resist film are stacked in sequence, by plasma includes a process of supplying a modifying gas, which is a h2 gas, a hydrogen halide gas, or a mixed gas containing a rare gas and a h2 gas or a hydrogen halide gas, into a chamber accommodating therein the processing target object in which a preset pattern is formed on the resist film; and modifying process of modifying the resist film of the processing target object by plasma of the modifying gas at a processing temperature equal to or less than −20° c.. . ... Tokyo Electron Limited

08/09/18 / #20180226277

Liquid processing apparatus

A liquid processing apparatus according to an embodiment includes a holding unit, a driving unit, a shaft, and a nozzle. The driving unit rotates the substrate and the holding unit that horizontally holds the substrate. ... Tokyo Electron Limited

08/09/18 / #20180226264

Plasma etching method

A plasma etching method includes a first process of generating a first plasma from a first processing gas that contains fluorine-containing gas and hydrogen-containing gas, by using a first radio frequency power, to etch a laminated film including a first silicon-containing film layer and a second silicon-containing film layer that is different from the first silicon-containing film layer, with the generated first plasma; and a second process that is performed after the first process and includes generating a second plasma from a second processing gas that contains bromine-containing gas, by using a second radio frequency power, to etch the laminated film with the generated second plasma. Unevenness is formed at an interface between the first silicon-containing film layer and the second silicon-containing film layer in the first process, and the unevenness is removed in the second process.. ... Tokyo Electron Limited

08/09/18 / #20180226261

Method of anisotropically etching graphene

A method for anisotropically etching graphene includes generating hydrogen plasma by microwave plasma, and anisotropically etching graphene by the generated hydrogen plasma.. . ... Tokyo Electron Limited

08/09/18 / #20180226255

Microwave plasma device

A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. ... Tokyo Electron Limited

08/09/18 / #20180226252

Method for planarizing graphene layer

There is provided a method for planarizing irregularities in a surface of a grapheme layer formed on a substrate, including: planarizing the grapheme layer by removing graphene constituting a convex portion in the surface of the grapheme layer by anisotropically etching the grapheme layer using a plasma etching in an in-plane direction from an edge portion of the graphene.. . ... Tokyo Electron Limited

08/09/18 / #20180226245

Plasma processing apparatus

Disclosed is a plasma processing apparatus including: a first electrode to which a high frequency power is supplied; a second electrode that functions as a counter electrode with respect to the first electrode; a plurality of dielectric units arranged between plasma generated between the first electrode and the second electrode, and the second electrode; and a controller that controls an impedance between the plasma and the second electrode via each of the dielectric units by independently controlling a position or a dielectric constant of each of the dielectric units.. . ... Tokyo Electron Limited

08/09/18 / #20180226226

Power supply system

A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a dc power supply 91 that supplies a dc voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the dc power supply 91 including a first dc power supply unit 101 that supplies a first negative dc voltage v1, a second dc power supply unit 102 that supplies a second negative dc voltage v2 having a higher absolute value than the first negative dc voltage v1, and a selecting circuit 103 that selectively connects the first dc power supply unit 101 and the second dc power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first dc power supply unit 101 and the selecting circuit 103.. . ... Tokyo Electron Limited

08/09/18 / #20180221925

Substrate processing apparatus, substrate processing method and recording medium

A substrate processing apparatus includes a stationary cup body 51 provided to surround a substrate holding unit 31 and configured to receive a processing liquid or mist of the processing liquid discharged onto a substrate, the stationary cup body not being moved relatively with respect to a processing vessel; a mist guard 80; and a guard elevating mechanism 84 configured to elevate the mist guard. Here, the mist guard is provided at an outside of the stationary cup body to surround the stationary cup body and configured to block a liquid scattered outwards beyond a space above the stationary cup body. ... Tokyo Electron Limited

08/02/18 / #20180219188

Coating device and coating method

Disclosed is a coating device which draws a pattern of a functional liquid on a substrate. The coating device includes: a substrate holding unit which holds the substrate; a droplet discharging unit which discharges a droplet of the functional liquid on the substrate held by the substrate holding unit; a moving unit which relatively moves the substrate holding unit and the droplet discharging unit in a main scanning direction and a sub scanning direction on a base; a mass measuring unit including a cup which receives the droplet discharged by the droplet discharging unit and a mass measuring device which measures a mass of the functional liquid accumulated in the cup; and a liquid drain unit which drains the functional liquid accumulated in the cup.. ... Tokyo Electron Limited

08/02/18 / #20180218929

Substrate processing apparatus, substrate processing method, and storage medium

Disclosed is a substrate processing apparatus including: a processing chamber that accommodates a substrate; a light source that radiates energy rays for a processing to the substrate in the processing chamber; a rotation driving unit that rotates at least one of the substrate and the light source around an axis intersecting with the substrate in the processing chamber; an opening/closing mechanism that switches between an open state and a closed state; and a controller configured to control the opening/closing mechanism to switch between the open state and the closed state, to increase a light emission amount of the light source in synchronization with the switch of the open state to the closed state by the opening/closing mechanism, and to decrease the light emission amount of the light source in synchronization with the switch of the closed state to the open state by the opening/closing mechanism.. . ... Tokyo Electron Limited

08/02/18 / #20180218925

Heating apparatus and substrate processing apparatus

Time periods required for a wafer w to reach a reference temperature are made to be uniform between heating modules 2 and between heating target regions in a temperature rising time period after the wafer w is placed on a heating plate 23, and temperature rise curves of temperature transition profiles in a temperature rise transition time period are made to be same. Therefore, the temperature transition profiles of the heating target regions are all same, and total heat amounts in the temperature rise transition time period are uniform within a surface of the wafer w and between the heating modules 2, so that a line width of a pattern formed on the wafer w becomes uniform. ... Tokyo Electron Limited

08/02/18 / #20180218924

Substrate liquid treatment apparatus

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. ... Tokyo Electron Limited

08/02/18 / #20180218909

Plasma shallow doping and wet removal of depth control cap

A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. ... Tokyo Electron Limited

08/02/18 / #20180218908

Plasma shallow doping and wet removal of depth control cap

A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. ... Tokyo Electron Limited

08/02/18 / #20180218907

Plasma shallow doping and wet removal of depth control cap

A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. ... Tokyo Electron Limited

08/02/18 / #20180218887

Processing apparatus for processing target object

In a processing apparatus, a cooling table in which a coolant is flown includes first to third regions, and a path group of the coolant. The first region is provided at a center portion of the cooling table. ... Tokyo Electron Limited

08/02/18 / #20180218886

Processing apparatus for processing target object

A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. ... Tokyo Electron Limited

08/02/18 / #20180218884

Substrate processing apparatus

There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer w in a chamber 11 of a substrate processing apparatus 10. ... Tokyo Electron Limited

08/02/18 / #20180218883

Microwave plasma source, microwave plasma processing apparatus and plasma processing method

A microwave plasma source for generating a microwave plasma inside a chamber by radiating a microwave into the chamber, includes: a microwave oscillator for oscillating the microwave and vary an oscillation frequency thereof; a waveguide through which the microwave propagates; an antenna part including a slot antenna for radiating the microwave into the chamber and having a predetermined pattern of slots, and a microwave-transmitting plate constituting a ceiling plate of the chamber and made of a dielectric material through which the microwave radiated from the slots transmits; temperature detectors for detecting temperatures at plural positions of the antenna part outside the chamber when the microwave plasma is generated; and a frequency controller for receiving detection signals obtained by the temperature detectors and controlling the oscillation frequency of the microwave oscillator so that a plasma density distribution inside the chamber becomes a desired distribution based on the detection signals.. . ... Tokyo Electron Limited

08/02/18 / #20180218882

Plasma processing method

In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.. ... Tokyo Electron Limited

08/02/18 / #20180218880

Microwave plasma source, microwave plasma processing apparatus and plasma processing method

A microwave plasma source that generates a microwave plasma in a processing space in which a target substrate is processed, includes: a microwave generation part for generating microwave; a waveguide through which the microwave generated by the microwave generation part propagates; an antenna part including a slot antenna having a predetermined pattern of slots formed therein and being configured to radiate the microwave propagating through the waveguide into the processing space and a microwave-transmitting plate being made of a dielectric material and being configured to transmit the microwave radiated from the slots therethrough and supply the microwave into the processing space; a temperature detector for detecting a temperature at a predetermined position in a microwave propagation path leading to the slot antenna; and an abnormality detection part for receiving the temperature detected by the temperature detector and detect an abnormality in the microwave propagation path based on the detected temperature.. . ... Tokyo Electron Limited

08/02/18 / #20180217201

Stage device and probe device

A drive unit of a stage device includes a boxy body having a rectangular shape in a plan view, a base, a pair of x-axis linear motors, and a pair of y-axis linear motors. An x-axis stator is disposed on each of two mutually opposing x-axis-direction side walls of the boxy body, wherein magnetic attractions that draw respective x-axis rotors toward the x-axis stator side (y-axis direction) cancel out each other between the pair of x-axis linear motors. ... Tokyo Electron Limited

07/26/18 / #20180211870

Interconnect structure and method of forming the same

A semiconductor device is provided. The semiconductor device can have a substrate including dielectric material. ... Tokyo Electron Limited

07/26/18 / #20180211853

Substrate processing apparatus, temperature control method, and temperature control program

Disclosed is a substrate processing apparatus including: a placing table having a placement surface and provided with a heater in each divided region obtained by dividing the placement surface; a calculation unit that calculates a target temperature of the heater in each divided region in which a critical dimension at a predetermined measurement point satisfies a predetermined condition, using a prediction model that predicts the critical dimension of the measurement point by using a temperature of the heater in each divided region as a parameter and taking into consideration an influence of a temperature of a heater in a divided region other than a divided region including the measurement point in accordance with a distance between the measurement point and the other divided region; and a heater controller that controls the heater in each divided region to reach the target temperature when the substrate processing is performed on the substrate.. . ... Tokyo Electron Limited

07/26/18 / #20180211850

Substrate transfer chamber, substrate processing system, and method for replacing gas in substrate transfer chamber

A compartment variable device is provided with: a baffle plate which has a plurality of openings and which as a whole has a rectangular shape; a rectangular frame disposed around the baffle plate; a bellows connected to a bottom of the frame; and a bellows support portion to which the lower end of the bellows is fixed. When a transfer arm of an atmosphere-side transfer device is lifted, the frame of the compartment variable device which is engaged with the transfer arm is lifted, thereby extending the bellows. ... Tokyo Electron Limited

07/26/18 / #20180211832

Coated film removing apparatus, coated film removing method and storage medium

There is provided a coated film removing apparatus for removing, with a removal liquid, a peripheral portion of a coated film formed by supplying a coating liquid to a surface of a circular substrate, including: a rotary holding part configured to hold the substrate and rotate together with the substrate; a removal liquid nozzle configured to discharge the removal liquid on a peripheral portion of the surface of the substrate held by the rotary holding part so that the removal liquid is oriented toward a downstream side in a rotational direction of the substrate; and a control part configured to output a control signal so as to rotate the substrate at a rotation speed of 2,300 rpm or more when discharging the removal liquid.. . ... Tokyo Electron Limited

07/26/18 / #20180211824

Plasma processing method including cleaning of inside of chamber main body of plasma processing apparatus

A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. ... Tokyo Electron Limited

07/26/18 / #20180211822

Method of processing target object

A deposit on a target object can be removed or the amount thereof can be reduced after plasma etching is completed and before the target object is carried out of a chamber. A method of processing the target object is provided. ... Tokyo Electron Limited

07/26/18 / #20180211818

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.. . ... Tokyo Electron Limited

07/26/18 / #20180209033

Substrate processing apparatus, substrate processing method, and storage medium

There is provided a substrate processing apparatus which includes: a substrate mounting table installed in a vacuum vessel; a gas supply part configured to supply a processing gas into the vacuum vessel; a vacuum-exhausting part configured to exhaust the interior of the vacuum vessel; an elevating member configured to lift up and down a substrate while holding the substrate mounted on the mounting table; and a control part configured to output a control signal to execute a first step of supplying the processing gas onto the substrate and setting an internal pressure of the vacuum vessel to a first pressure, a second step of changing the internal pressure to a second pressure lower than the first pressure, and a third step of lifting up the substrate from the mounting table after the first step and before the second step or in parallel with the second step.. . ... Tokyo Electron Limited

07/19/18 / #20180204757

Plasma processing apparatus

A plasma processing apparatus that plasmatizes a gas that is supplied to inside of a chamber by using high-frequency power used for generating a plasma and applies plasma processing to a substrate is provided. The plasma processing apparatus includes a stage in which a first electrode and a second electrode are formed separately, the second electrode being provided around the first electrode, the substrate being placed above the first electrode, a focus ring being provided above the second electrode; a first high-frequency power supply configured to apply to the first electrode first high-frequency power used for mainly drawing an ion in the plasma; and a second high-frequency power supply, provided independently from the first high-frequency power supply, configured to apply to the second electrode second high-frequency power used for mainly drawing an ion in the plasma.. ... Tokyo Electron Limited

07/19/18 / #20180204756

Plasma processing apparatus

A plasma processing apparatus of processing a processing target object within a depressurized space is provided. The plasma processing apparatus includes a processing vessel that partitions a depressurizable space; a mounting table, provided within the processing vessel, having an electrostatic chuck which is for a focus ring and has three electrodes; a power supply configured to apply three ac voltages having different phases to the three electrodes, respectively, to adsorb a target object on the electrostatic chuck.. ... Tokyo Electron Limited

07/19/18 / #20180204745

Substrate processing apparatus, substrate processing method and computer readable recording medium

A substrate processing apparatus includes a rotation holding device that holds and rotates a substrate, a liquid supply device including one or more rinse liquid nozzles that are positioned on back surface side of the substrate and supply rinse liquid to peripheral edge portion of back surface of the substrate, a cup that receives the liquid supplied to the substrate, and a control device including circuitry that controls the holding and supply devices. The nozzle is attached to the cup to receive the liquid, and the circuitry controls the holding and supply devices and executes first process in which the holding device varies rotation speed between first and second speeds, and the nozzle supplies the liquid to the peripheral edge portion of the back surface of the substrate such that the liquid cleans peripheral region of the nozzle in the cup and region on outer side of the peripheral region.. ... Tokyo Electron Limited

07/19/18 / #20180204733

Method of preferential silicon nitride etching using sulfur hexafluoride

Embodiments of the invention describe substrate processing methods using non-polymerizing chemistry to preferentially etch silicon nitride relative to other materials found in semiconductor manufacturing. According to one embodiment, a processing method includes providing in a plasma processing chamber a substrate containing a first material containing silicon nitride and a second material that is different from the first material, forming a plasma-excited process gas containing sf6, and exposing the substrate to the plasma-excited process gas to preferentially etch the first material relative to the second material. ... Tokyo Electron Limited

07/19/18 / #20180204716

Protective film forming method

A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. ... Tokyo Electron Limited

07/19/18 / #20180200764

Substrate processing apparatus, substrate processing method and recording medium

Contamination of a bottom surface of a substrate caused by a processing liquid used for cleaning a top surface of the substrate can be suppressed. After performing a liquid processing on the top surface of the substrate and a liquid processing on the bottom surface of the substrate in parallel while rotating the substrate by a substrate holding/rotating unit, when stopping the liquid processing on the top surface of the substrate and the liquid processing on the bottom surface of the substrate, a control unit 18 stops a supply of the processing liquid onto the top surface of the substrate by a processing liquid supply device 73, and then, stops a supply of the processing liquid onto the bottom surface of the substrate by a processing liquid supply device 71.. ... Tokyo Electron Limited

07/12/18 / #20180197759

Heat treatment apparatus and temperature control method

Disclosed is a heat treatment apparatus including: a processing container configured to accommodate a substrate; a furnace body having a heater configured to heat the substrate accommodated in the processing container and provided around the processing container; a blower configured to supply a coolant to a space between the processing container and the furnace body; and a controller having a continuous operation mode in which the blower is continuously energized and an intermittent operation mode in which energization and de-energization of the blower are repeated, and configured to control driving of the blower based on an instruction voltage. The controller drives the blower in the intermittent operation mode when the instruction voltage is higher than 0 v and lower than a predetermined threshold voltage.. ... Tokyo Electron Limited

07/12/18 / #20180197748

Substrate processing method and substrate processing apparatus

In a substrate processing method for performing predetermined processing on a substrate, which has a processing target film, accommodated in a processing chamber, as a luminous intensity of a predetermined wavelength in an emission spectrum of a plasma generated from a processing gas in the chamber, a luminous intensity of the predetermined wavelength which starts to change when actual processing of the processing target film is started is measured. Then, a processing time of the predetermined processing performed after a moment when the measured luminous intensity of the predetermined wavelength is changed, is set.. ... Tokyo Electron Limited

07/12/18 / #20180197730

Selective siarc removal

Methods and systems for selective silicon anti-reflective coating (siarc) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a siarc layer, a pattern transfer layer, and an underlying layer. ... Tokyo Electron Limited

07/12/18 / #20180197720

Plasma processing method and plasma processing apparatus

In a plasma processing method, a carbon-containing film is formed on surfaces of components in a chamber by using a plasma of a carbon-containing gas, and a silicon-containing film whose film thickness is determined based on a film thickness of the carbon-containing film is formed on a surface of the carbon-containing film by a silicon-containing gas. Then, a target object is loaded into the chamber and processed by a plasma of a processing gas after the formation of the silicon-containing film. ... Tokyo Electron Limited

07/12/18 / #20180195173

Substrate processing apparatus

There is provided a substrate processing apparatus for performing film formation by supplying a processing gas to a substrate, including: a rotary table provided in a processing container; a mounting stand provided to mount the substrate and configured to be revolved by rotating the rotary table; a processing gas supply part configured to supply a processing gas to a region through which the mounting stand passes by the rotation of the rotary table; a rotation shaft rotatably provided in a portion rotating together with the rotary table and configured to support the mounting stand; a driven gear provided on the rotation shaft; a driving gear provided along an entire circumference of a revolution trajectory of the driven gear to face the revolution trajectory of the driven gear and configured to constitute a magnetic gear mechanism with the driven gear; and a rotating mechanism configured to rotate the driving gear.. . ... Tokyo Electron Limited

07/12/18 / #20180193862

Operating method of processing liquid supply apparatus and recording medium

An operating method of a processing liquid supply apparatus which supplies a processing liquid to a substrate from a processing liquid supply path via a nozzle includes measuring a surface potential of a first electrode which is configured to be in contact with the processing liquid of the processing liquid supply path. The operating method further includes displaying the measured surface potential in the measuring of the surface potential of the first electrode.. ... Tokyo Electron Limited

07/05/18 / #20180190521

Substrate processing apparatus

Disclosed is a substrate processing apparatus including: n (n is an integer of 4 or more) vacuum processing modules each provided with a vacuum container for processing a substrate in a vacuum atmosphere; and an auxiliary facility group including a processing gas supply facility, an evacuation facility, a chiller facility, and a power supply facility. The n vacuum processing modules are grouped into first and second group sets, and in each group set, the vacuum processing modules included in each group share an auxiliary facility selected from the auxiliary facility group.. ... Tokyo Electron Limited

07/05/18 / #20180190519

Gas supply device and substrate processing apparatus

A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. ... Tokyo Electron Limited

07/05/18 / #20180190505

Method of selectively etching silicon oxide film on substrate

An etching method including: (a) providing a workpiece including a first region made of a first material and a second region made of a second material defining a recess, the first region filling the recess of the second region while covering the second region; (b) generating plasma of a first fluorocarbon gas to etch the first region until before exposing the second region; (c) generating plasma of a second fluorocarbon gas to form fluorocarbon deposits on the first region; (d) generating plasma of an inert gas to etch the first region by fluorocarbon radicals contained in the fluorocarbon deposits; and (e) repeating step (c) and step (d) one or more times until after exposing the second region. An etching rate of the first material of the first region is higher than that of the second material of the second region with respect to the second fluorocarbon gas.. ... Tokyo Electron Limited

07/05/18 / #20180190501

Plasma processing apparatus

Disclosed is a plasma processing apparatus including: a first placing table including a placing surface configured to place thereon a workpiece serving as a plasma processing target, an outer peripheral surface, a heater provided on the placing surface, a power supply terminal provided on a back surface side opposite to the placing table, and a wiring provided on the outer peripheral surface so as to be enclosed in an insulator, the wiring being configured to connect the heater and the power supply terminal; and a second placing table provided along the outer peripheral surface of the first placing table and configured to place a focus ring thereon.. . ... Tokyo Electron Limited

07/05/18 / #20180190500

Method for etching multilayer film

In a method for etching a multilayer film of a target object by using a plasma processing apparatus, the multilayer film of the target object includes a layer made of a metal magnetic material and a mask is provided on the multilayer film. The multilayer film is etched in a state where a pressure in a processing chamber of the plasma processing apparatus is set to a first pressure that is a relatively high pressure. ... Tokyo Electron Limited

07/05/18 / #20180190474

Plasma processing apparatus

In a plasma processing apparatus, an operation unit configured to calculate a parameter including any one of a load impedance, a load resistance and a load reactance of a high frequency power supply and a reflection wave coefficient of a high frequency power, and a controller configured to sequentially perform multiple cycles, each having plural stages which are performed in sequence. The controller is configured to control a setting of the high frequency power supplied to an electrode to be changed at a time point when the parameter exceeds a threshold value after a processing gas is changed. ... Tokyo Electron Limited

07/05/18 / #20180187308

Method and system for sculpting spacer sidewall mask

Provided is a method of forming a spacer sidewall mask, the method comprising: providing a substrate in a process chamber, the substrate having a carbon mandrel pattern and an underlying layer, the underlying layer comprising an amorphous silicon layer above a silicon nitride layer; performing a breakthrough etch process including growth of a conformal native silicon oxide layer, creating an ald patterned structure; performing a spacer sidewall sculpting process on the ald patterned structure; performing an amorphous silicon main etch (me) process on the ald patterned structure, the me process causing a spacer oxide open and carbon mandrel removal; and performing an amorphous silicon me over etch (oe) process on the ald spacer oxide pattern, the me oe process transferring the ald spacer oxide pattern into the amorphous silicon layer, generating a first sculpted pattern comprising a first sculpted sub-structure with a trapezoidal shape.. . ... Tokyo Electron Limited

07/05/18 / #20180187298

Method for manufacturing graphene and apparatus for manufacturing graphene

There is provided a method for manufacturing graphene. The method includes an adsorption step of causing six-membered ring structures of carbon atoms to be adsorbed to a surface of a substrate; and an irradiation step of irradiating the surface of the substrate with a beam of a molecule containing carbon atoms.. ... Tokyo Electron Limited

07/05/18 / #20180185856

Liquid processing apparatus and liquid processing method

A liquid processing apparatus includes a holding device, a rotation device, and a processing fluid supply device including a nozzle positioned to face a surface of a substrate, a first supply path connected to the nozzle, and a second supply path connected to the nozzle such that the supply device supplies processing liquid to the substrate. The nozzle has a common flow path extending in radial direction from center portion toward peripheral portion of the substrate, and discharge ports connected to the common path and positioned in the radial direction, the first path is connected to the common path and supplies first liquid to the common path, the second path is connected to the common path and supplies second liquid to the common path that is different from the first liquid in temperature and/or concentration, and the first and second paths are communicatively connected each other via the common path.. ... Tokyo Electron Limited

06/28/18 / #20180182957

Etching method

There is provided an workpiece etching method executed in manufacturing a magneto-resistive effect element, the workpiece including first and second multilayer films, the first multilayer film including first and second magnetic layers and a tunnel barrier layer formed between the first and second magnetic layers, and the second multilayer film being a multilayer film constituting a pinning layer in the magneto-resistive effect element. The method includes: etching the first multilayer film; generating plasma of a first gas including hydrocarbon and noble gases inside a chamber of a plasma processing apparatus to etch the second multilayer film inside the chamber; and generating plasma of a second gas including gas containing carbon and oxygen, an oxygen gas and a noble gas and not containing hydrogen inside the chamber to remove a carbon-containing deposit formed on the workpiece in the generating the plasma of the first gas.. ... Tokyo Electron Limited

06/28/18 / #20180182656

Measurement method, method of removing static electricity, and plasma processing apparatus

A measurement method includes vibrating a wafer through up-and-down movement of one or more pins supporting the wafer after performing processing with gas-based plasma generated through application of high-frequency electric power while the wafer, which is placed on a stage in a processing container, is electrostatically adhered by an electro-static chuck, calculating a residual charge amount of the wafer from an induced current flowing through an attracting electrode upon the vibrating of the wafer, and calculating a voltage to be applied to the attracting electrode in response to the calculated residual charge amount of the wafer.. . ... Tokyo Electron Limited

06/28/18 / #20180182652

Substrate processing apparatus, substrate processing method, and substrate processing system

A substrate processing apparatus includes a base member having an opening, a substrate holding member fixedly provided on the base member and configured to hold a plurality of substrates in multiple stages in a vertical direction, a plurality of shower plates provided to respectively face the substrates held by the substrate holding member and configured to supply a processing gas to the substrates existing thereunder in a shower shape, at least one gas introduction member configured to introduce the processing gas into the shower plates, a processing container provided to be able to make close contact with the base member and brought into close contact with the base member to define an arrangement space of the substrate holding member as a processing chamber, a heating device configured to heat the substrates in the processing chamber, and an exhaust mechanism configured to evacuate the processing chamber through the opening.. . ... Tokyo Electron Limited

06/28/18 / #20180182638

Method and apparatus for substrate processing

A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.. . ... Tokyo Electron Limited

06/28/18 / #20180182635

Focus ring and substrate processing apparatus

A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.. . ... Tokyo Electron Limited

06/28/18 / #20180182616

Substrate processing method and substrate processing apparatus

A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. ... Tokyo Electron Limited

06/28/18 / #20180182612

Substrate processing apparatus and substrate processing method

An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit u5 includes a processing vessel 21 configured to accommodate therein a wafer w as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a hmds gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). ... Tokyo Electron Limited

06/28/18 / #20180182611

Thermal treatment apparatus, thermal treatment method, and non-transitory computer storage medium

A thermal treatment apparatus including a hot plate which heats a substrate mounted thereon, in a treatment chamber including a lid body covering a surface to be treated of the substrate mounted on the hot plate, the thermal treatment apparatus includes: a control unit which controls at least a temperature of the hot plate, and a temperature measuring unit which measures a temperature of the lid body, wherein the control unit is configured to perform, when a set temperature of the hot plate is changed, correction of a heating amount by the hot plate for obtaining the set temperature after change, based on the temperature of the lid body measured by the temperature measuring unit.. . ... Tokyo Electron Limited

06/28/18 / #20180182610

Substrate cleaning method, substrate cleaning system, and memory medium

A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.. . ... Tokyo Electron Limited

06/28/18 / #20180180509

Method for inspecting for leaks in gas supply system valves

Leaks in valves provided in a plurality of pipes connected to a plurality of gas sources are inspected. In a method of an embodiment, a first valve provided in a first pipe connected to a gas source is closed, and a second valve provided in a first pipe on a downstream side of the first valve is opened. ... Tokyo Electron Limited

06/28/18 / #20180179630

Film forming apparatus and film forming method

A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.. ... Tokyo Electron Limited

06/28/18 / #20180179627

Purging method

A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.. ... Tokyo Electron Limited

06/28/18 / #20180179625

Film forming apparatus, film forming method and heat insulating member

There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.. ... Tokyo Electron Limited

06/21/18 / #20180174897

Method of selective deposition for beol dielectric etch

Embodiments of the invention address several issues and problems associated with etching of dielectric materials for beol applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. ... Tokyo Electron Limited

06/21/18 / #20180174838

Film forming method, boron film, and film forming apparatus

There is provided a method of forming a boron film on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 pa (5 to 250 mtorr). The boron film is formed on a substrate on which a semiconductor device is formed, by plasmarizing a reaction gas containing a boron-containing gas under a process atmosphere regulated to a pressure which falls within a range of 0.67 to 33.3 pa (5 to 250 mtorr).. ... Tokyo Electron Limited

06/21/18 / #20180174806

Plasma processing apparatus

Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.. . ... Tokyo Electron Limited

06/21/18 / #20180174805

Plasma processing apparatus

A plasma processing apparatus includes a pedestal to receive a substrate thereon; a temperature control mechanism provided in the pedestal; a heat transfer gas supply mechanism configured to supply a heat transfer gas to a back surface of the substrate; a first radio frequency power source configured to output first high frequency power having a first frequency; a second radio frequency power source configured to output second high frequency power having a second frequency that is lower than the first frequency; and a temperature measurement unit configured to control a surface temperature of the substrate to have a temperature lower than −35 degrees c. By using the temperature control mechanism provided in the pedestal and to perform feedback control of stopping the output of the second radio frequency power from the second radio frequency power source.. ... Tokyo Electron Limited

06/21/18 / #20180173103

Optical processing apparatus, coating/development apparatus, optical processing method, and non-transitory computer-readable storage medium

An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.. ... Tokyo Electron Limited

06/21/18 / #20180171478

Gas treatment apparatus and gas treatment method

A gas treatment apparatus includes: a mounting part of a substrate; a gas diffusion plate of a processing gas; gas dispersion parts forming a diffusion space of the processing gas between the gas dispersion parts and the gas diffusion plate; and a flow path having an upstream side forming a common flow path of the gas dispersion parts and a downstream side connected to each of the gas dispersion parts, lengths from the common flow path to respective of the gas dispersion parts being aligned, wherein centers of the gas dispersion parts are located around a central portion of the diffusion space, and the gas dispersion parts are arranged along first circles with two or more of the gas dispersion parts arranged on each of the first circles and distances from the central portion of the diffusion space to the centers of gas dispersion parts being different from one another.. . ... Tokyo Electron Limited

06/21/18 / #20180169716

Particle removal method and substrate processing method

A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.. ... Tokyo Electron Limited

06/14/18 / #20180166310

Substrate processing apparatus

A substrate processing apparatus includes a processing section that performs a batch process to a plurality of substrates. A first substrate transport mechanism removes one of substrates contained in a substrate container placed on a stage, and transport the substrate to a position adjusting unit, in which the position of the substrate in the rotating direction of the substrate is adjusted, and transports the substrate back to the substrate container. ... Tokyo Electron Limited

06/14/18 / #20180166303

Method of selectively etching first region made of silicon nitride against second region made of silicon oxide

Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.. ... Tokyo Electron Limited

06/14/18 / #20180166298

Substrate processing apparatus

In a substrate processing apparatus, a mounting table and a gas supply part are provided in a processing container to face each other. The processing gas introduced from introduction ports formed in the gas supply part on the opposite side of the gas supply part from the mounting table is supplied to the substrate from gas supply holes formed in an end portion of the gas supply part on the side of the mounting table. ... Tokyo Electron Limited

06/14/18 / #20180166295

Etching method and substrate processing system

In an etching method for removing a processing target layer formed on a substrate for manufacturing electronic devices, a first break-through process of removing an oxide film formed on a surface of the processing target layer is performed, and a first main etching process of etching the processing target layer is performed after the first break-through process. Then, a second break-through process of removing the oxide film exposed after the first main etching process is performed, and a second main etching process of etching the processing target layer is performed after the second break-through process.. ... Tokyo Electron Limited

06/14/18 / #20180166259

Mounting table and plasma processing apparatus

Non-uniformity of temperature of a focus ring can be improved by reducing holes which hamper a heat transfer from the focus ring to a base. A mounting table includes the base configured to place a processing target object thereon; the focus ring provided on the base to surround a region on which the processing target object is placed; a connecting member provided with a through hole and configured to connect the base to a member provided below the base by being inserted into an insertion hole formed at a region of the base which corresponds to a lower portion of the focus ring; and a lifter pin provided at the base such that the lifter pin is allowed to be protruded from the insertion hole by being inserted into the through hole of the connecting member, and configured to raise the focus ring by being protruded from the insertion hole.. ... Tokyo Electron Limited

06/14/18 / #20180166257

Method for supplying gas, and plasma processing apparatus

In the exemplary embodiment, a method for supplying a gas is provided. This method includes: supplying a processing gas to each of a central gas inlet portion and a peripheral gas inlet portion through a first branch line and a second branch line; closing a valve at a downstream side in a gas line for an additional gas, and filling the additional gas in a tube between the valve and an upstream flow rate controller; opening the valve after filling the additional gas, and supplying a high frequency power to one of an upper electrode and a lower electrode from a high frequency power supply after opening the valve.. ... Tokyo Electron Limited

06/14/18 / #20180164700

Substrate treatment system, substrate transfer method, and computer storage medium

A substrate treatment system includes: a treatment station including a plurality of treatment apparatuses; an interface station which delivers a substrate to/from an exposure apparatus provided outside the system and including a plurality of exposure stages; a plurality of substrate inspection apparatuses; a substrate transfer mechanism which transfers the substrate between each of the treatment apparatuses in the treatment station and the substrate inspection apparatus; and a control apparatus which identifies an exposure stage which has been used in exposure processing of a substrate from among the plurality of exposure stages, and controls the substrate transfer mechanism to transfer the substrate after the exposure processing to a substrate inspection apparatus previously made to correspond to the identified exposure stage.. . ... Tokyo Electron Limited

06/14/18 / #20180164696

Optical processing apparatus and substrate processing apparatus

An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. ... Tokyo Electron Limited

06/14/18 / #20180164689

Substrate treatment method and thermal treatment apparatus

A thermal treatment apparatus that performs a thermal treatment on a metal-containing film formed on a substrate, includes: a treatment chamber that houses the substrate; a thermal treatment plate that is provided inside the treatment chamber and mounts the substrate thereon; and a moisture supply unit that supplies moisture to the metal-containing film, wherein at the time of the thermal treatment, moisture is supplied to the metal-containing film of the substrate on the thermal treatment plate and an atmosphere in the treatment chamber is exhausted from a central portion of the treatment chamber.. . ... Tokyo Electron Limited

06/07/18 / #20180158796

Bonding apparatus, bonding system, bonding method and storage medium

There is provided a bonding apparatus for bonding substrates together, which includes: a first holding part configured to adsorptively hold a first substrate by vacuum-drawing the first substrate on a lower surface of the first substrate; a second holding part provided below the first holding part and configured to adsorptively hold a second substrate by vacuum-drawing the second substrate on an upper surface of the second substrate; a pressing member provided in the first holding part and configured to press a central portion of the first substrate; and a plurality of substrate detection parts provided in the first holding part and configured to detect a detachment of the first substrate from the first holding part.. . ... Tokyo Electron Limited

06/07/18 / #20180158711

Plasma processing apparatus

A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. ... Tokyo Electron Limited

06/07/18 / #20180158701

Substrate liquid processing apparatus and substrate liquid processing method

A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. ... Tokyo Electron Limited

06/07/18 / #20180158699

Method of cleaning substrate processing apparatus and system of cleaning substrate processing apparatus

Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. ... Tokyo Electron Limited

06/07/18 / #20180158693

Method of manufacturing semiconductor device

There is provided a method of manufacturing a semiconductor device, which includes: supplying a raw material for polymerization to a porous low dielectric constant film formed on a substrate for manufacturing a semiconductor device, and filling holes formed in the porous low dielectric constant film with a polymer having a urea bond; subsequently, forming a pattern mask for etching on a surface of the porous low dielectric constant film; subsequently, etching the porous low dielectric constant film; subsequently, removing the pattern mask; and heating the substrate to depolymerize the polymer.. . ... Tokyo Electron Limited

06/07/18 / #20180158684

Method of processing target object

A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. ... Tokyo Electron Limited

06/07/18 / #20180158676

Supercritical fluid producing apparatus and substrate processing apparatus

A supercritical fluid producing apparatus according to the present disclosure includes a gas supply line, a cooler, a pump, a buffer tank, a heating device, and a supercritical fluid supply line. An inlet port into which a processing fluid from the pump flows is formed at a predetermined position on the buffer tank, and an outlet port through which the processing fluid flows out is formed at a different position from the inlet port. ... Tokyo Electron Limited

06/07/18 / #20180158671

Film forming apparatus and film forming method

A film forming apparatus includes a gas injection unit having a shower plate provided with gas injection holes, and a plurality of partition regions through which gases are separately injected and which are defined by dividing an arrangement region of the gas injection holes into a plurality of concentric regions in a diametrical direction of the substrate. A supply amount of a raw material gas per unit time in a raw material gas supply period in a cycle of forming a monomolecular layer by supplying the raw material gas and a reactant gas multiple times, and per unit area of the shower plate, and/or a supply amount of the reactant gas per unit time in a reaction period of the raw material gas and the reactant gas in the cycle, and per unit area of the shower plate becomes different in at least two of the partition regions.. ... Tokyo Electron Limited

06/07/18 / #20180158657

Methods and systems for chamber matching and monitoring

A method and a system for plasma etching are provided. The method includes measuring a first set of plasma etch processing parameters; determining an etch rate; altering the plasma etch processing chamber hardware configuration if the determined etch rate differs from a standard etch rate by more than a predetermined etch rate difference threshold, thereafter repeating the determining and altering until the determined etch rate differs from the standard etch rate by less than the predetermined etch rate difference threshold. ... Tokyo Electron Limited

06/07/18 / #20180158654

Etching method and plasma processing apparatus

An etching method is provided for processing a substrate that includes a first region having an insulating film arranged on a silicon layer and a second region having the insulating film arranged on a metal layer. The etching method includes a first step of etching the insulating film into a predetermined pattern using a plasma generated from a first gas until the silicon layer and the metal layer are exposed, and a second step of further etching the silicon layer after the first step using a plasma generated from a second gas including a bromide-containing gas.. ... Tokyo Electron Limited

06/07/18 / #20180158652

Methods and systems for chamber matching and monitoring

A method and a system for monitoring a plasma chamber are provided. The method includes receiving process chamber characteristics from the plasma chamber; determining whether one or more variables associated with the process chamber characteristics are within predetermined specification. ... Tokyo Electron Limited

06/07/18 / #20180158650

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a process chamber, and a pedestal provided in the process chamber and configured to hold a substrate. The plasma processing apparatus includes a first gas supply part configured to be able to supply a first gas from a location facing the pedestal, and a radio frequency power source configured to convert the first gas to plasma. ... Tokyo Electron Limited

06/07/18 / #20180157178

Substrate processing apparatus, substrate processing method and recording medium

A controller performs a control to contact, after forming a liquid puddle of a rinse liquid on a surface of a wafer, a liquid contact surface of a nozzle of a developing liquid supply unit with the liquid puddle and to form a liquid puddle of a diluted developing liquid by discharging a developing liquid from the nozzle; a control to rotate the wafer at a first rotation speed which allows the diluted developing liquid inside an edge of the liquid contact surface to stay between the liquid contact surface and the surface and allows the diluted developing liquid outside the edge of the liquid contact surface to be diffused toward an edge of the wafer; and a control to move the nozzle toward the edge of the wafer while rotating the wafer at a second rotation speed smaller than the first rotation speed and discharging the developing liquid.. . ... Tokyo Electron Limited

06/07/18 / #20180156739

Substrate inspection method, computer storage medium and substrate inspection apparatus

A method of inspecting a substrate to be repeatedly treated along a predetermined transfer way in a plurality of kinds of different treatment apparatuses, includes: imaging a substrate that has been treated in one of the treatment apparatuses, to acquire a first substrate image; imaging a substrate that has been an object for imaging the first substrate image and further treated in another treatment apparatus different from the one treatment apparatus after treated in the one treatment apparatus, to acquire a second substrate image; then performing defect inspection, based on the first substrate image and the second substrate image; and identifying, depending on whether or not a defect detected from the second substrate image is not detected from the first substrate image, whether or not the defect is caused by a treatment after the first substrate image is acquired and a treatment before the second substrate image is acquired.. . ... Tokyo Electron Limited








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