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Ushio Denki Kabushiki Kaisha patents


Recent patent applications related to Ushio Denki Kabushiki Kaisha. Ushio Denki Kabushiki Kaisha is listed as an Agent/Assignee. Note: Ushio Denki Kabushiki Kaisha may have other listings under different names/spellings. We're not affiliated with Ushio Denki Kabushiki Kaisha, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "U" | Ushio Denki Kabushiki Kaisha-related inventors


Photodynamic therapy light irradiating device and light irradiating method

. . Provided are a photodynamic therapy light irradiating device and a light irradiating method that can achieve an excellent therapeutic effect by short-time light irradiation. The photodynamic therapy light irradiating device of the present invention includes a light source part having a first led element having a peak wavelength within a wavelength range of 400 to 420 nm and a second led element having a peak wavelength within a wavelength range of 500 to 520 nm, and a control unit for controlling outputs of the first led element and the second led element. ... Ushio Denki Kabushiki Kaisha

Sterilizing method

Provided is a sterilization method capable of performing a sterilization treatment with high sterilization efficiency using ozone produced from an air regardless of the humidity of the air as an ozone raw material gas. In the sterilization method, the air as an ozone raw material gas is irradiated with light for producing ozone which does not include light with a wavelength region where the light decomposes ozone and which has a wavelength of not more than 200 nm to obtain an ozone-containing air, and an object to be sterilized is exposed to the ozone-containing air to sterilize the object. ... Ushio Denki Kabushiki Kaisha

Method of joining resin tubes

An object of the present invention is to provide a method of joining resin tubes, in which the degree of freedom of selecting a tube material is large, and further a defect such as stiffness and contraction at joining portions of the tubes is not developed. The method of joining resin tubes according to the present invention is a method of joining resin tubes so that a first tube is joined to a second tube, the first tube and the second tube each being made of synthetic resin, the method comprising: a surface activation step of activating each of a joining region of the first tube and a joining region of the second tube; and an adhesion step of adhering the joining region of the first tube obtained via the surface activation step with the joining region of the second tube obtained via the surface activation step to each other.. ... Ushio Denki Kabushiki Kaisha

Wiring substrate method of manufacturing, wiring substrate and wiring substrate manufacturing device

A semiconductor device includes a first mos transistor and a second mos transistor of a second conductivity type. The first mos transistor includes a first main electrode connected to a first potential and a second main electrode connected to a second potential. ... Ushio Denki Kabushiki Kaisha

Method of bonding substrates, microchip and method of manufacturing the same

Disclosed herein is a method of bonding substrates, a microchip, and a method of manufacturing the microchip capable of joining two substrates in a higher adhered state even when at least one of the substrate has a warpage or a roll. A method of bonding a first substrate and a second substrate each of which is made of glass or a resin comprises: a surface activating step for activating each of joining surfaces of the first substrate and the second substrate; and a pressurizing step for pressurizing the first substrate and the second substrate in a state that the first substrate and the second substrate are stacked such that respective joining surfaces contact each other. ... Ushio Denki Kabushiki Kaisha

Discharge electrodes and light source device

An extreme ultraviolet light source device includes a pair of disk-shaped discharge electrodes which face each other with their peripheral portions being spaced from each other, a pulsed power supply unit for supplying pulsed power to the discharge electrodes, a raw material supply unit for supplying onto the discharge electrodes raw materials that emit extreme ultraviolet light, and an energy beam irradiation unit for irradiating the raw materials on curved surfaces of the discharge electrodes with an energy beam to vaporize the raw materials. At least one of the paired discharge electrodes has a tapered surface at a peripheral portion of at least one of two circular surfaces thereof. ... Ushio Denki Kabushiki Kaisha

Fluorescence light source apparatus

The present invention has as its object the provision of a fluorescence light source apparatus which has high reliability without a drop in reflectance over a long period of time. The fluorescence light source apparatus of the present invention includes a fluorescent plate that emits fluorescence under excitation light and has a front surface serving as an excitation light incident surface, a reflection layer that is disposed on a back surface side of the fluorescent plate, and a heat dissipation substrate, wherein a sealing layer covering a back surface and a peripheral side surface of the reflection layer is provided in close contact with a peripheral area of the back surface of the fluorescent plate via an adhesion layer, and a diffusion prevention layer formed by nickel plating is provided on the heat dissipation substrate via a bonding member layer.. ... Ushio Denki Kabushiki Kaisha

Fluorescence light source apparatus

The present invention has as its object the provision of a fluorescence light source apparatus that is prevented from a drop in reflectance and can provide high emission efficiency over a long period of time without causing the problem of exfoliation of a reflection layer from a fluorescent plate. The fluorescence light source apparatus according to the present invention includes a fluorescent plate that is made of a phosphor for emitting fluorescence under excitation light and a metal oxide and has a front surface serving as an excitation light incident surface, a reflection layer disposed on a back surface side of the fluorescent layer, and a heat dissipation substrate. ... Ushio Denki Kabushiki Kaisha

Light source device

A light source device includes a light emitting element adapted to emit exciting light; a fluorescent element having a phosphor and adapted to convert at least a portion of the exciting light emitted from the light emitting element into fluorescence and to reflect the fluorescence; and a common cooling member adapted to cool the light emitting element and the fluorescent element. The cooling member includes a first cooling surface coupled to the light emitting element for cooling the light emitting element, and a second cooling surface coupled to the fluorescent element for cooling the fluorescent element. ... Ushio Denki Kabushiki Kaisha

Process for laminating works together

An object of the present invention is to provide a process for laminating works together that are capable of giving laminates a high bonding strength ensured therein. The process for laminating works together laminates a work composed of a resin to a work composed of a resin or glass, the process including a surface activation step of treating a laminating surface of at least the work composed of a resin with vacuum ultraviolet ray or with atmospheric pressure plasma, and a bonding step of bonding together the two works stacked on each other such that a laminating surface of one of the works abuts a laminating surface of the other work, wherein in the surface activation step, the treatment of the laminating surfaces with vacuum ultraviolet ray or with atmospheric pressure plasma is terminated when an accumulated treatment quantity of the vacuum ultraviolet ray or the atmospheric pressure plasma applied to the laminating surfaces is within an initial drop range shown in a variation curve of a water contact angle on the laminating surfaces with respect to the accumulated treatment quantity.. ... Ushio Denki Kabushiki Kaisha

Fluorescence microscope light source apparatus and fluorescence microscope

Disclosed are a fluorescence microscope light source apparatus and a fluorescence microscope capable of obtaining high-luminance light in a wavelength of 500 to 550 nm and having reduced background noise when a sample is observed. The fluorescence microscope light source apparatus to be installed in a fluorescence microscope including an illumination light bandpass filter includes: a laser diode that emits blue light as excitation light; a phosphor that converts the excitation light from the laser diode into illumination fluorescence with a wavelength region of 500 to 550 nm; an optical system that extracts the illumination fluorescence from the phosphor; a first condenser lens that condenses the excitation light onto the phosphor; a light guide body having one end face on which the illumination fluorescence is incident and the other end face from which the illumination fluorescence exits; and a second condenser lens that condenses the illumination fluorescence onto the one end face of the light guide body. ... Ushio Denki Kabushiki Kaisha

Fluorescence light source apparatus

The present invention has as its object the provision of a fluorescence light source apparatus which provides a high emission efficiency of a fluorescent plate and a sufficiently high fluorescence intensity. According to the present invention, the fluorescence light source apparatus includes a fluorescent plate that receives excitation light to emit fluorescence, and a heat dissipation substrate that dissipates heat generated in the fluorescent plate, the fluorescent plate and the heat dissipation substrate being bonded via a solder layer, wherein the solder layer has a void ratio of not more than 75% and a maximum void diameter of not more than 0.4 mm. ... Ushio Denki Kabushiki Kaisha

Optical system phase acquisition method and optical system evaluation method

When an optical system is illuminated with illumination light fluxes emitted from respective input image points, an interference image generated by superimposing output light fluxes output from the optical system and a reference light flux coherent with the output light fluxes is imaged to acquire interference image data collectively including information of an interference image about all input image points. Diffractive optical light propagation simulation is performed to acquire a phase distribution associated with only light emitted from a single input image point at a position where reconstructed light fluxes to the respective output light fluxes are separated into each light flux. ... Ushio Denki Kabushiki Kaisha

Semiconductor laser element and semiconductor laser device

Disclosed herein is a semiconductor laser element capable of suppressing a wavelength dependency of a reflection ratio. A reflective film of the semiconductor laser element includes an l1 layer arranged at a first position from the end faces of the resonator and having a refractive index of n1; and a periodic structure configured by layering a plurality of pairs of an l2n layer and an l2n+1 layer. ... Ushio Denki Kabushiki Kaisha

12/28/17 / #20170373460

Laser-driven light source device

A light source device includes a laser oscillator for emitting a continuous laser beam and a pulsed laser beam. The laser oscillator has a resonator, at least one laser medium in the resonator, a first pumping unit for supplying light to the laser medium, and a second pumping unit for supplying another light to the laser medium. ... Ushio Denki Kabushiki Kaisha

12/28/17 / #20170370780

Optical system phase acquisition method and optical system evaluation method

When the optical system is illuminated with an illumination light flux emitted from one extant input image point, an interference image generated by superimposing an extant output light flux output from the optical system and a reference light flux coherent with the extant output light flux is imaged to acquire interference image data, and thus to acquire measured phase distribution, and this acquisition operation is applied to each extant input image point. Thus, each measured phase distribution is expanded by expanding functions μn(u, v) having coordinates (u, v) on a phase defining plane as a variable to be represented as a sum with coefficients Σn{ajn·μn(u, v)}. ... Ushio Denki Kabushiki Kaisha

12/07/17 / #20170350745

Liquid level detection device, method of detecting liquid level, high temperature plasma raw material supply device and extreme ultra violet light source device

Disclosed herein a liquid level detection device capable of appropriately detecting a liquid level of a high temperature plasma raw material in a reservoir for storing the high temperature plasma raw material. The liquid level detection device includes: an upper limit level sensor configured to detect that the liquid level of the tin is elevated from downward to reach an upper limit level; and a refilling level sensor configured to detect that the liquid level of the tin is lowered from upward to reach a refilling level or a lower limit level. ... Ushio Denki Kabushiki Kaisha

09/14/17 / #20170261847

Exposure method, method of fabricating periodic microstructure, method of fabricating grid polarizing element and exposure apparatus

. . Disclosed herein an exposure apparatus capable of implementing a microfabrication onto a work with a higher throughput and a lower cost. The exposure apparatus generates interfering light by crossing two or more branched light beams branched from output light from a coherent light source at a predetermined interfering angle, and exposes the substrate by repeating an irradiation onto the substrate with the interfering light and a conveyance of the substrate. ... Ushio Denki Kabushiki Kaisha

08/24/17 / #20170242171

Grid polarization element, and optical alignment device

An absorptive grid polarization element includes a transparent substrate, and a stripe-like grid provided on the transparent substrate. Each of a plurality of linear parts which form the grid absorbs more s polarization light than p polarization light, and thus achieves a polarizing action. ... Ushio Denki Kabushiki Kaisha

08/24/17 / #20170241631

Fluorescent light source apparatus

An object of the present invention is to provide a fluorescent light source apparatus that is capable of efficiently cooling a fluorescent member and holding the fluorescent member at a proper position relative to a reflector and is thus capable of stably providing a high light output over a long period of time. A fluorescent light source apparatus according to the present invention has a configuration in which a fluorescent member that generates fluorescence upon application of excitation light thereto and a reflector having a reflective surface disposed so as to face an excitation light receiving surface of the fluorescent member are held by a common holding structure formed of a heat conductive material. ... Ushio Denki Kabushiki Kaisha

08/17/17 / #20170237954

Discharge lamp lighting device, light source device, and image formation device

The discharge lamp lighting device for supplying alternating current to a discharge lamp includes: a power supply control part having a segment signal generation part, a peak value control part, and a frequency control part; and a power supply part. The peak value control part sets a specific segment period, which indicates a value where a value of integral corresponding to a product of the length of the segment period and a peak value set in a segment period is most deviated from an average value of the values of integral within the specific period, to a period other than a final segment period positioned at the final end of the specific period, among a plurality of segment periods belonging to the specific period.. ... Ushio Denki Kabushiki Kaisha

08/10/17 / #20170231074

Discharge lamp lighting device

. . A discharge lamp lighting device includes a control unit adapted to control a frequency of the ac electric current supplied to a discharge lamp by a feeding unit, in different manners within a first term and a second term which are alternately repeated, the control unit is adapted to control the frequency of the ac electric current such that, within the first term, the frequency of the ac electric current becomes at least one frequency out of plural set frequencies, and is further adapted to control the frequency of the ac electric current, based on a predetermined frequency and an electric current within the previous first term, such that, within the second term, the frequency of the ac electric current becomes a frequency lower than this predetermined frequency.. . ... Ushio Denki Kabushiki Kaisha

08/03/17 / #20170222091

Nitride semiconductor light emitting element and method for manufacturing the same

. . Provided is a nitride semiconductor light emitting element which has good luminous efficiency by suppressing deep-level emission and increasing the monochromaticity. A nitride semiconductor light emitting element according to the present invention comprises an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. ... Ushio Denki Kabushiki Kaisha

08/03/17 / #20170219172

Fluorescence light source device

The present invention has as its object the provision of a fluorescence light source device that can obtain high luminous efficiency. A fluorescence light source device of the present invention includes a wavelength conversion member that emits fluorescence by excitation laser light. ... Ushio Denki Kabushiki Kaisha

07/13/17 / #20170199463

Vacuum ultra violet light source device, light irradiation device and method for patterning self assembled monolayer

Disclosed herein a vacuum ultra violet light source device that is capable of suppressing an amount of ozone generation when the vacuum ultra violet light is emitted into an atmosphere containing oxygen, a light irradiation device incorporating the vacuum ultra violet light device, and a method of patterning a self-assembled monolayer employing the light irradiation device. The light irradiation device is configured to irradiate a self-assembled monolayer (sam) formed on a workpiece with light containing vacuum ultra violet light through a mask m on which a prescribed pattern is formed so as to perform a patterning process of the sam. ... Ushio Denki Kabushiki Kaisha

06/22/17 / #20170175968

Light projection device and head lamp for vehicle

Disclosed herein a light projection device and a head lamp for vehicle capable of highly increasing and decreasing the illuminance of a plurality of specific regions in a light distribution designed in advance with high degree of freedom. The light projection device includes: a first optical system that forms a second light radiation region; a dynamic light deflection unit configured to deflect a light beam involved in forming the second light radiation region; a second optical system configured to project the deflected light beam to form a third light radiation region; and a deflection pattern generation unit configured to deflect and output each ray of the light beam such that a direction of deflection to be imparted is dependent on a position at which each ray is incident on the light incident portion.. ... Ushio Denki Kabushiki Kaisha

06/22/17 / #20170175967

Vehicle-mounted light source device

The vehicle-mounted light source device of the present invention includes a light source unit including a light source that emits a red laser beam, a light source that emits a green laser beam, and a light source that emits a blue laser beam; a light combining system that combines the red laser beam, the green laser beam, and the blue laser beam; a light diffusing element that adjusts diffusion angles of light beams emitted from the light combining system to a predetermined angle; an optical projection system that projects light beams emitted from the light diffusing element to distance; and a light distribution controller that is disposed between the light diffusing element and the optical projection system and that controls distributions of light beams introduced into the optical projection system.. . ... Ushio Denki Kabushiki Kaisha

06/15/17 / #20170168313

Laser light source device and image projection device

An image projection device is provided with at least one laser light source device and uses a light beam exited from the laser light source device as projection light. A laser light source device is provided with a plurality of light source units from which laser beams exit, the plurality of light source units are divided into a plurality of laser light source groups based on magnitudes of angles at which optical axes of the laser beams are incident on the incident surface. ... Ushio Denki Kabushiki Kaisha

06/08/17 / #20170162745

Semiconductor light-emitting device and method for manufacturing same

The purpose of the present invention is to provide a semiconductor light-emitting device having good life characteristics and higher light extraction efficiency than conventional devices. This semiconductor light-emitting device includes a substrate; semiconductor layers including a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode; and a second electrode. ... Ushio Denki Kabushiki Kaisha

06/01/17 / #20170156217

Desmear treatment device and desmear treatment method

The present invention has as its object the provision of a desmear treatment device and a desmear treatment method capable of sufficiently removing smear remaining in a to-be-treated object in a short amount of time. The desmear treatment device of the present invention includes: a treatment chamber in which a to-be-treated object is disposed; a light source unit in which an ultraviolet lamp for irradiating the to-be-treated object with ultraviolet rays is housed; a light transmissive window that is disposed between the treatment chamber and the light source unit and that transmits the ultraviolet rays from the ultraviolet lamps; and treatment gas supply means for supplying a treatment gas containing a source of active species to the treatment chamber. ... Ushio Denki Kabushiki Kaisha

06/01/17 / #20170155013

Led element

An led element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of alx1gay1inz1n (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of inx2ga1-x2n (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of alx3gay3inz3n (0<x3<1, 0<y3<1, 0≦z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.. . ... Ushio Denki Kabushiki Kaisha

06/01/17 / #20170154791

Desmear treatment device and desmear treatment method

The present invention has as its object the provision of a desmear treatment device and a desmear treatment method capable of reliably performing a desmear treatment with high treatment efficiency. In the desmear treatment method of the present invention, when irradiating a to-be-treated object disposed in a treatment space with vacuum ultraviolet rays via an ultraviolet transmitting window member to remove smear in the to-be-treated object, a treatment gas containing active species to be activated by the irradiation of the vacuum ultraviolet rays and having contained moisture is supplied into the treatment space. ... Ushio Denki Kabushiki Kaisha

06/01/17 / #20170151562

Microchip

Disclosed herein are a microchip provided with a titanium oxide film between a glass substrate and a metal thin film; and a method for forming the metal thin film and the titanium oxide film on the glass substrate of the microchip. The microchip has a second microchip substrate that has the metal thin film inside a channel, and the titanium oxide film, which has a low extinction coefficient, is provided as a buffer layer between the substrate and the metal thin film such as a gold film.. ... Ushio Denki Kabushiki Kaisha

05/18/17 / #20170142816

Discharge lamp lighting apparatus

A discharge lamp lighting apparatus is provided with a pulse generation part, and a power supply part converts dc applied voltage into alternating current corresponding to a frequency of the pulse, and supplies the alternating current to the discharge lamp. The pulse generation part is structured to alternately output a first pulse and a second pulse that has a lower frequency than the first pulse. ... Ushio Denki Kabushiki Kaisha

05/04/17 / #20170123301

Light source apparatus and image projection apparatus

A light source apparatus, which includes a plurality of light sources which emit laser beams, a rod integrator in which the laser beams emitted from the plurality of light sources enter a first surface, and a light detecting part which detects reflected light reflected by a second surface of the rod integrator and emitted from the first surface of the rod integrator.. . ... Ushio Denki Kabushiki Kaisha

04/27/17 / #20170117441

Nitride semiconductor light emitting element

Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner a nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains alnga1-nn (0<n≦1), and has a c concentration of 1×1017/cm3 or less.. . ... Ushio Denki Kabushiki Kaisha

04/20/17 / #20170110630

Semiconductor light emitting element, production method therefor, led element and electron-beam-pumped light source device

This method for producing a semiconductor light emitting element includes: a step (a) of preparing a growth substrate; a step (b) of growing a first layer made of alx1gay1in1-x1-y1n (0<x1≦1, 0≦y1≦1) on an upper layer of the growth substrate in a <0001> direction; a step (c) of forming a groove portion extending along a <11-20> direction of the first layer with respect to the first layer with such a depth that a surface of the growth substrate is not exposed; a step (d) of growing a second layer made of alx2gay2in1-x2-y2n (0<x2≦1, 0≦y2≦1) on an upper layer of the first layer with at least a {1-101} plane serving as a crystal growth plane; and a step (e) of growing an active layer on an upper layer of the second layer.. . ... Ushio Denki Kabushiki Kaisha

03/30/17 / #20170094766

Extreme ultraviolet light source device

An extreme ultraviolet light source device that can stably and efficiently provide euv emission. The euv light source device includes a first laser source that irradiates a high-temperature plasma raw material with a laser beam, and a second laser source that, after the high-temperature plasma raw material is irradiated with the laser beam and before effective extreme ultraviolet light is emitted, irradiates the raw material in that region which is irradiated with the laser beam, with a second laser beam. ... Ushio Denki Kabushiki Kaisha

03/30/17 / #20170093123

Semiconductor laser device

Disclosed herein is a semiconductor laser device that has a higher heat dissipation property, comprising: a base; a block protruding from a first surface of the base; a laser chip being joined onto a side face rising upward from the first surface, and allowing heat generated to be transferred to the block; a cap covering the block and be fixed on the first surface; a window provided in the cap and allowing the light emitted from the laser chip to pass through; at least one lead pin penetrating the base, one end of the lead pin protruding inside the cap, and any of the lead pin being positioned at an opposite side of the block with respect to the laser chip; and a pinless region extending in a range of the base corresponding to a rear side of the block and provided with none of pins including the lead pin.. . ... Ushio Denki Kabushiki Kaisha

03/30/17 / #20170090289

Method of manufacturing a structure on a substrate

A method includes dividing a single beam emitted from a coherent light source into at least two branch beams, and causing the branch beams to cross each other at a predetermined interference angle thereby generating interference light. The method also includes irradiating a target surface of a substrate with the interference light. ... Ushio Denki Kabushiki Kaisha

03/23/17 / #20170084788

Semiconductor light-emitting element and production method therefor

The purpose of the present invention is to provide a semiconductor light-emitting element with further enhanced light extraction efficiency while ensuring horizontal widening of current flowing through an active layer. This method for producing a semiconductor light-emitting element according to the present invention includes: a step (a) for forming a semiconductor layer including an active layer on an upper layer of a growth substrate; a step (b) for forming a first metal layer on a top surface of the semiconductor layer; a step (c) for forming a second metal layer on a portion of a top surface of the first metal layer without preforming annealing after the step (b); and a step (d) for performing annealing after the step (c).. ... Ushio Denki Kabushiki Kaisha

03/16/17 / #20170077676

External resonator type laser device

An external resonator type laser device has an optical element that forms an external resonator with a semiconductor device by selecting and reflecting light of a specific wavelength range from light outputted from the semiconductor device; a supporting member formed of a material having a larger coefficient of linear expansion than the optical element; and a first mount interposed between the optical element and the supporting member, formed of a material having a coefficient of linear expansion closer to that of the optical element compared with that of the supporting member. The optical element is adhered to the first mount. ... Ushio Denki Kabushiki Kaisha

03/16/17 / #20170077674

Semiconductor laser element and method of making semiconductor laser device

A semiconductor laser element includes an inclined substrate, a semiconductor layer formed on one surface of the substrate, a first electrode (n-type electrode) formed on an opposite surface of the substrate, a second electrode (p-type electrode) formed on the semiconductor layer, and a current constriction part formed in the semiconductor layer. The semiconductor layer has a multi-layer structure including at least an active layer. ... Ushio Denki Kabushiki Kaisha

03/02/17 / #20170058085

Curing process of ultraviolet curable paint

A curing process of an ultraviolet curable paint by which a paint cured layer can be formed on an object to be processed without needing a long time, and intended color can be obtained of the object to be processed on which the paint cured layer is formed. The curing process of an ultraviolet curable paint is one for curing an ultraviolet curable paint through an ultraviolet irradiation step of irradiating a surface of an object to be processed to which the ultraviolet curable paint is applied with ultraviolet rays from an ultraviolet radiation unit. ... Ushio Denki Kabushiki Kaisha

02/23/17 / #20170052447

Method for manufacturing patterned object, patterned object, and light irradiation apparatus

Disclosed herein is a method for manufacturing a patterned object and a light irradiation apparatus that make it possible to form a pattern that accurately follows a mask pattern with higher accuracy in a patterning process of irradiating a pattern forming substrate with vacuum ultra violet light. The light irradiation apparatus includes a mask stage arranged apart from the pattern forming substrate and configured to hold a mask on which a prescribed pattern is formed, and a vacuum ultra violet light source unit configured to irradiate the pattern forming substrate with vacuum ultra violet light through the mask. ... Ushio Denki Kabushiki Kaisha

01/19/17 / #20170017027

Grid polarizer and photo-alignment device

A stripe-shaped grid provided on a transparent substrate is made from dielectrics or semiconductors. For each linear segment of the grid, a gap (t) on one side of the linear segment, and an opposite gap (t) on an opposite side of the linear segment materially satisfy the relation t<t in a periodic fashion. ... Ushio Denki Kabushiki Kaisha

01/12/17 / #20170012166

Semiconductor light-emitting element

Provided is a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least 530 nm, wherein the light emission efficiency is greater than the conventional art. A semiconductor light-emitting element has a peak emission wavelength of greater than or equal to 530 nm, and comprise: an n-type semiconductor layer; an active layer formed above n-type semiconductor layer; and a p-type semiconductor layer formed above the active layer. ... Ushio Denki Kabushiki Kaisha

01/05/17 / #20170002987

Led lighting device

An led lighting device which can emit light in a wide range of color temperatures and provides favorable color mixing of the emitted mixed color light on an irradiated surface. The led lighting device includes a (a≧3) red leds, b (b≧2) green leds, c (c≧3) blue leds and d (d≧1) lime led(s) that are arranged in an arrangement region on a substrate, and a control mechanism that performs operation control on the leds of each color, wherein conditions (1) b≦a, (2) b≦c and (3) 0.1 (a+c)≦d≦0.28 (a+c) are satisfied, and at least one or more of leds arranged to adjoin each lime led is/are any of the red leds or any of the blue leds.. ... Ushio Denki Kabushiki Kaisha








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