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Vanguard International Semiconductor Corporation patents


Recent patent applications related to Vanguard International Semiconductor Corporation. Vanguard International Semiconductor Corporation is listed as an Agent/Assignee. Note: Vanguard International Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Vanguard International Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "V" | Vanguard International Semiconductor Corporation-related inventors


Electrical contact structure and methods for forming the same

An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. ... Vanguard International Semiconductor Corporation

Semiconductor structure and method for manufacturing the same

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (soi) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. ... Vanguard International Semiconductor Corporation

Semiconductor structure and method for forming the same

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. ... Vanguard International Semiconductor Corporation

Semiconductor devices and methods for manufacturing the same

A method for manufacturing a semiconductor device includes forming a first well region in a semiconductor substrate, forming isolation structures on the semiconductor substrate, and forming second well regions and a third well region in the first well region, wherein the second well regions are isolated from the third well region by the isolation structures, and two of the adjacent second well regions have a first distance between them. The method also includes performing a rapid thermal annealing process to shorten the first distance to a second distance. ... Vanguard International Semiconductor Corporation

Semiconductor device including zener diode and method of manufacturing thereof

A semiconductor device, including an insulator formed on a top surface of a semiconductor substrate, a semiconductor layer, containing a first region of a first conductivity type, formed on the insulator layer, wherein the first region is a p+ region or an n+ region, a second region of a second conductivity type in direct contact with the first region and forming a p-n junction with the first region, wherein the p-n junction comprises a first portion parallel to the top surface of the semiconductor substrate, and the second region is the semiconductor substrate and partially covered by the semiconductor layer, a first metallization region in electrical contact with the first region and a second metallization region in electrical contact with the second region. . ... Vanguard International Semiconductor Corporation

Semiconductor device and method for manufacturing the same

The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor on an insulator (soi) substrate having a bottom substrate, a buried oxide layer on the bottom substrate, and a semiconductor layer on the buried oxide layer. ... Vanguard International Semiconductor Corporation

Electrostatic discharge protection circuit

An electrostatic discharge (esd) protection circuit is provided. A detector is coupled between a first input-output pad and a second input-output pad and detects the voltage levels of the first and second input-output pads to generate a detection signal. ... Vanguard International Semiconductor Corporation

Methods for forming the isolation structure of the semiconductor device and semiconductor devices

A method for forming an isolation structure of a semiconductor device is provided. The method includes forming a patterned dielectric structure in a first area and a second area of a substrate; forming a first isolation structure in the first area and forming a second isolation structure in the second area of the substrate; forming a cap layer over the first area and the second area of the substrate and performing an etching process to etch the cap layer of the second area completely; and performing an oxidation process on the second area to form a first oxide region over the second isolation structure and under the bottom surface of the patterned dielectric structure of the second area.. ... Vanguard International Semiconductor Corporation

Semiconductor structures and method for fabricating the same

A semiconductor structure is provided, which includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, a plurality of first trenches, a contact window, and a third trench. The first trenches are formed in the second substrate and filled with dielectric material and conductive material. ... Vanguard International Semiconductor Corporation

Semiconductor structures and method for fabricating the same

A semiconductor structure is provided. The semiconductor structure includes a first substrate, an oxide layer formed on the first substrate, a second substrate formed on the oxide layer, a plurality of semiconductor devices formed in the second substrate, and a plurality of trenches formed in the second substrate and filled with an insulation material, wherein the trenches are separated from each other and one of the trenches surrounds one of the semiconductor devices. ... Vanguard International Semiconductor Corporation

Semiconductor substrate structures, semiconductor devices and methods for forming the same

A semiconductor substrate structure includes a substrate having a first conductivity type, an oxide layer disposed on the substrate, and a semiconductor layer disposed on the oxide layer. The semiconductor substrate structure also includes a first buried layer disposed in the semiconductor layer, having a second conductivity type opposite to the first conductivity type. ... Vanguard International Semiconductor Corporation

Bonding pad structure having island portions and method for manufacturing the same

A method for fabricating a bonding pad structure includes forming a dielectric layer on a substrate; forming a first metal pattern layer in the dielectric layer. The first metal pattern layer includes a first body portion having a plurality of first openings in a central region of the first body portion and a plurality of second openings arranged along a peripheral region of the first body portion and surrounding the plurality of first openings; and a plurality of first island portions correspondingly disposed in the plurality of second openings and spaced apart from the first body portion. ... Vanguard International Semiconductor Corporation

Ultra-high voltage devices

An ultra-high voltage device is provided. The ultra-high voltage device includes a substrate, a first well zone formed in the substrate, a second well zone having a surface formed in the substrate adjacent to the first well zone, a gate oxide formed on the first well zone and the second well zone of the substrate, a gate formed on the gate oxide, a channel formed in the first well zone underneath the gate oxide, an accumulation region formed in the second well zone underneath the gate oxide adjacent to the channel, wherein only a part of the accumulation region is implanted with a dopant to form an implant region therein, and an insulation region formed on the surface of the second well zone of the substrate adjacent to the accumulation region, wherein a boundary is formed between the insulation region and the accumulation region.. ... Vanguard International Semiconductor Corporation

Delay circuits

A delay circuit is provided. The delay circuit includes a voltage-generation circuit and a signal-generation circuit. ... Vanguard International Semiconductor Corporation

03/15/18 / #20180076288

Trench isolation structures and methods for forming the same

A trench isolation structure is provided. The trench isolation structure includes a substrate. ... Vanguard International Semiconductor Corporation

03/15/18 / #20180076282

Semiconductor devices and methods for forming the same

A semiconductor device and a method for forming the same are provided. The method includes forming a patterned mask on a substrate, wherein the patterned mask includes a pad oxide layer and a silicon nitride layer over the pad oxide layer. ... Vanguard International Semiconductor Corporation

02/22/18 / #20180053776

Memory device and method for manufacturing the same

A memory device is provided. The memory device includes a substrate and a first stack structure. ... Vanguard International Semiconductor Corporation

02/22/18 / #20180053549

Resistive memory and memory cell

A memory unit is provided. The memory unit includes a resistive element, a diode, and a first transistor. ... Vanguard International Semiconductor Corporation

01/18/18 / #20180019741

Driving circuit

A driving circuit controlling a voltage level of an input/output pad and having an electrostatic discharge (esd) protection function comprises a detector, a controller, and a release control element. The detector is configured to couple to a power terminal and the input/output pad. ... Vanguard International Semiconductor Corporation

01/11/18 / #20180012823

Semiconductor devices, via structures and methods for forming the same

A semiconductor device includes a via structure penetrating through a substrate, a top metal layer and an electronic component over the via structure, and a bottom metal layer and another electronic component below the via structure. The via structure includes a through hole penetrating from a first surface to an opposite second surface of a substrate, a filling insulating layer within the through hole, a first conductive layer, which is within the through hole and surrounds the filling insulating layer, wherein a portion of the first conductive layer is below the filling insulating layer and at the bottom of the through hole. ... Vanguard International Semiconductor Corporation

01/04/18 / #20180006012

Protection device and operation system utilizing the same

A protection device including a substrate, a first doped region, a first well region, a second doped region, a third doped region, a fourth doped region, a second well region, a fifth doped region, and a sixth doped region is provided. The substrate, the first well region, and the third and the fifth doped regions have a first conductivity type. ... Vanguard International Semiconductor Corporation

01/04/18 / #20180005942

Semiconductor device structures

Semiconductor device structures are provided. The semiconductor device structures include a semiconductor substrate. ... Vanguard International Semiconductor Corporation

12/28/17 / #20170372944

Methods for fabricating trench isolation structure

A method for fabricating a trench isolation structure is provided. The method includes providing a substrate and forming a patterned mask layer on the substrate. ... Vanguard International Semiconductor Corporation

12/21/17 / #20170365599

High-voltage semiconductor devices

A high-voltage semiconductor device includes a mos device and a resistor device. The mos device has a source, a drain, a drain insulation region adjacent to the drain, and a gate adjacent to the source. ... Vanguard International Semiconductor Corporation

12/21/17 / #20170363221

Throttle valve

A throttle valve is provided, including a throttle valve body, a valve plug, a hollow seal, a cover, a spring, and a bushing. A flow path is formed in the throttle valve body. ... Vanguard International Semiconductor Corporation

12/21/17 / #20170363215

Throttle valve

A throttle valve is provided. The throttle valve includes a throttle valve body, a valve plug, a hollow seal and a first scraper. ... Vanguard International Semiconductor Corporation

11/23/17 / #20170338221

Integrated circuit and electrostatic discharge protection circuit thereof

An electrostatic discharge protection circuit is provided. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor (mos) transistor, a second mos transistor, and a third mos transistor. ... Vanguard International Semiconductor Corporation

11/09/17 / #20170323938

Semiconductor device and method for manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer; a first conductive type first well region disposed in the substrate and the epitaxial layer; a second conductive type first buried layer and a second conductive type second buried layer disposed at opposite sides of the first conductive type first well region, respectively; a first conductive type second well region disposed in the epitaxial layer and being in direct contact with the first conductive type first well region; a second conductive type third buried layer disposed in the first conductive type first well region and/or the first conductive type second well region; a second conductive type doped region disposed in the first conductive type second well region; a gate structure; a drain contact plug; and a source contact plug.. ... Vanguard International Semiconductor Corporation

09/21/17 / #20170271485

High-voltage semiconductor structure

A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. ... Vanguard International Semiconductor Corporation

07/27/17 / #20170213898

Method and apparatus for mos device with doped region

A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. ... Vanguard International Semiconductor Corporation

07/13/17 / #20170199534

Low dropout regulators

A low dropout regulator is provided. The low dropout regulator includes an output-stage circuit, a reference-voltage generation circuit, a timing controller, and an active low dropout circuit. ... Vanguard International Semiconductor Corporation

06/08/17 / #20170163031

Esd protection circuits

An esd protection circuit, which is coupled between either an i/o pad or a power pad and a ground terminal, includes a non-snapback device and a snapback device. When the voltage across the non-snapback device is not less than the non-snapback trigger voltage, the non-snapback device is turned on. ... Vanguard International Semiconductor Corporation

06/08/17 / #20170162691

Semiconductor device and method for manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate including a first conductive type well region; a gate structure; a lightly-doped drain region and a lightly-doped source region disposed at two opposite sides of the gate structure; a second conductive type first doped region disposed in the lightly-doped drain region, wherein the doping concentration of the second conductive type first doped region is less than the doping concentration of the lightly-doped drain region; a heavily-doped source region disposed in the lightly-doped source region; and a heavily-doped drain region disposed in the second conductive type first doped region. ... Vanguard International Semiconductor Corporation

04/27/17 / #20170117408

A metal-oxide field effect transistor having an oxide region within a lightly doped drain region

A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. ... Vanguard International Semiconductor Corporation

03/30/17 / #20170092755

Method and apparatus for power device with multiple doped regions

A semiconductor device is provided. The device includes a substrate having a first conductivity type. ... Vanguard International Semiconductor Corporation

03/16/17 / #20170077316

Semiconductor device and method for manufacturing the same

A semiconductor device is provided. The semiconductor device includes a substrate; a well region disposed in the substrate; an isolation structure surrounding an active region in the well region; a source region disposed in the well region; a drain region disposed in the well region; a second conductive type first doped region disposed in the well region and disposed along a periphery of the active region; a second conductive type second doped region disposed in the well region and under the source region, the drain region and the second conductive type first doped region, wherein the second conductive type second doped region is in direct contact with the second conductive type first doped region; a source electrode; a drain electrode and a gate electrode. ... Vanguard International Semiconductor Corporation

03/16/17 / #20170077091

Semiconductor structure and method for manufacturing the same

A semiconductor structure includes a first high-voltage mos device region having a first light doping region in a substrate. The conductive type of the substrate is similar to that of the first light doping region. ... Vanguard International Semiconductor Corporation

03/09/17 / #20170069620

Semiconductor device layout structure

The invention provides a semiconductor device layout structure disposed in an active region. The semiconductor device layout structure includes a first well region having a first conduction type. ... Vanguard International Semiconductor Corporation

02/23/17 / #20170054369

Boost devices with active diodes and switch-mode converters thereof

A switch-mode converter includes a high-side driver, a high-side transistor, a low-side driver, a low-side transistor, a capacitor, and an active diode. The high-side driver is supplied by the bootstrap voltage of the bootstrap node and a floating reference voltage of a floating reference node, and generates the high-side output signal. ... Vanguard International Semiconductor Corporation

02/23/17 / #20170054357

High-side circuits with modified diode and layout placement thereof

A high-side circuit, adapted for a switched-mode converter, includes a level shifter, a high-side driver, a high-side transistor, a capacitor, and an active diode. The level shifter receives a first signal to generate a set signal. ... Vanguard International Semiconductor Corporation

01/26/17 / #20170025411

Semiconductor device

The invention provides a semiconductor device. The semiconductor device includes a buried oxide layer disposed on a substrate. ... Vanguard International Semiconductor Corporation








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