Real Time Touch

new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)

Real Time Touch

Veeco Instruments Inc patents

Recent patent applications related to Veeco Instruments Inc. Veeco Instruments Inc is listed as an Agent/Assignee. Note: Veeco Instruments Inc may have other listings under different names/spellings. We're not affiliated with Veeco Instruments Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "V" | Veeco Instruments Inc-related inventors

Alkyl push flow for vertical flow rotating disk reactors

In a rotating disk reactor for growing epitaxial layers on substrate or other cvd reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. ... Veeco Instruments Inc

Wafer processing with carrier extension

Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. ... Veeco Instruments Inc

Thickness uniformity control for epitaxially-grown structures in a chemical vapor deposition system

Systems and methods are described herein for improving the overall thickness control and the radial thickness profile of epitaxially-grown films or layers on wafers. Continuous, in situ measurement of thickness at a radially inner region and a radially outer region are used in embodiments to control corresponding precursor and/or dilution gas flow rates. ... Veeco Instruments Inc

Seal for wafer processing assembly

A seal having a cross-sectional profile that includes a first lobe, a second lobe, and a corner having an angle between 45 and 90 degrees, inclusive, a first side extending from the first lobe to the corner and a second side extending from the second lobe to the corner, where the first side and the second side define the corner angle. The seal can be seated in a groove so that the first lobe and the corner are in the groove and the second lobe extends from the groove. ... Veeco Instruments Inc

Enhanced cathodic arc source for arc plasma deposition

An improved cathodic arc source and method of dlc film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. ... Veeco Instruments Inc

Ion beam etching

Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. ... Veeco Instruments Inc

Central source delivery for chemical vapor deposition systems

According to embodiments, systems and methods are described herein that facilitate use of a chemical vapor deposition (cvd) system continuously. The systems and methods shown herein include multiple precursor gas sources, and structures for independently connecting or disconnecting those sources for replacement. ... Veeco Instruments Inc

Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas

The presently disclosed ion sources include one or more electromagnets for changing the distribution of plasma within a discharge space of an ion source. At least one of the electromagnets is oriented about an outer periphery of a tubular sidewall of the ion source and changes a distribution of the plasma in a peripheral region of the discharge space.. ... Veeco Instruments Inc

Ion beam materials processing system with grid short clearing system for gridded ion beam source

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. ... Veeco Instruments Inc

Gas concentration sensors and systems

A chemical vapor deposition or atomic layer deposition system includes a gas concentration sensor for determining the quantity of precursor gases admitted thereto. The gas concentration sensor can include a transmitter and a receiver for transmitting an acoustic signal across a chamber. ... Veeco Instruments Inc

Wafer handling assembly

A wafer handing assembly comprising a center hub supporting a vertical non-contact lifting head and at least one radially extending and radially retracting wafer engaging mechanism having a surface to engage a wafer at a peripheral edge of the wafer, where the peripheral edge is a corner edge or a side edge. In some implementations, the wafer engaging mechanism has a foot on which the wafer edge is supported.. ... Veeco Instruments Inc

Wafer handling assembly

A wafer handling assembly comprising a center hub supporting a vertical non-contact lifting head and at least one radially extending and radially retracting wafer engaging mechanism having a surface to engage a wafer at a peripheral edge of the wafer, where the peripheral edge is a corner edge or a side edge. In some implementations, the wafer engaging mechanism has a foot on which the wafer edge is supported. ... Veeco Instruments Inc

Periphery purge shutter and flow control systems and methods

An arrangement of two shutters radially outward from an injector block and a susceptor onto which a wafer carrier is removably mounted are configured to provide a flowpath through a reactor chamber that does not exhibit a vortex, thereby reducing or eliminating buildup on the inside of the reactor chamber and facilitating large temperature gradient between the injector block and the wafer carrier. This can be accomplished by introduction of a purge gas flow at a radially inner wall of an upper shutter, and in some embodiments the purge gas can have a different chemical composition than the precursor gas used to grow desired epitaxial structures on the wafer carrier.. ... Veeco Instruments Inc

Keyed wafer carrier

A structure for a chemical vapor deposition reactor desirably includes a reaction chamber having an interior, a spindle mounted in the reaction chamber, and a wafer carrier releasably mounted onto the spindle for rotation therewith. The spindle desirably has a shaft extending along a vertical rotational axis and a key projecting outwardly from the shaft. ... Veeco Instruments Inc

06/01/17 / #20170154986

Stress control on thin silicon substrates

Methods for stress control in thin silicon (si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature, reactant supply, time), a highly uniform nucleation layer is formed on the si substrate that mitigates and/or better controls the stress (tensile and compressive) in subsequent layers formed on the thin si substrate.. ... Veeco Instruments Inc

05/04/17 / #20170125668

Ion beam etching of stt-ram structures

This disclosure provides various methods for improved etching of spin-transfer torque random access memory (stt-ram) structures. In one example, the method includes (1) ion beam etch of the stack just past the mtj at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the mtj to just above the mtj, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the mtj, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.. ... Veeco Instruments Inc

05/04/17 / #20170121847

Wafer carrier having thermal uniformity-enhancing features

A wafer carrier assembly for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition (cvd), the wafer carrier assembly includes a wafer carrier body formed symmetrically about a central axis, and including a generally planar top surface that is situated perpendicularly to the central axis and a planar bottom surface that is parallel to the top surface. At least one wafer retention pocket is recessed in the wafer carrier body from the top surface. ... Veeco Instruments Inc

04/06/17 / #20170096734

Rotating disk reactor with ferrofluid seal for chemical vapor deposition

A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. ... Veeco Instruments Inc

03/16/17 / #20170076972

Planetary wafer carriers

A wafer carrier for a plurality of wafers, the wafer carrier having a platen with a plurality of openings and a plurality of wafer retention platforms, the platen configured to rotate about a first axis, the plurality of wafer retention platforms configured to rotate about respective second axes, each of the wafer retention platforms rotatably coupled to one of the plurality of openings by friction reducing bearings, the platen and the plurality of wafer retention platforms and the friction reducing bearings all being constructed of the same material.. . ... Veeco Instruments Inc

03/09/17 / #20170067163

Multiple chamber chemical vapor deposition system

A chemical vapor deposition system is disclosed herein. The chemical vapor deposition system has a plurality of reaction chambers to operate independently in the growth of epitaxial layers on wafers within each of the reaction chambers for the purpose of reducing processing time while maintaining the quality necessary for the fabrication of high-performance semiconductor devices.. ... Veeco Instruments Inc

02/23/17 / #20170053049

Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes

Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (cvd) system can be made based on a computational thermal model built according physical and operational characteristics of the cvd system. Operation of the thermal model is simulated, where a process recipe to be carried out on the cvd system is modeled, including heat transfers taking place in the virtual cvd system, to produce a set of thermal-spatial non-uniformities in at least one region of interest of a virtual wafer carrier. ... Veeco Instruments Inc

02/02/17 / #20170032974

Method and apparatus for controlled dopant incorporation and activation in a chemical vapor deposition system

Embodiments include systems and methods for producing semiconductor wafers having reduced quantities of point defects. These systems and methods include a tunable ultraviolet (uv) light source, which is controlled to produce a raster of a uv light beam across a surface of a semiconductor wafer during epitaxial growth to dissociate point defects in the semiconductor wafer. ... Veeco Instruments Inc

01/26/17 / #20170025258

Deposition of thick magnetizable films for magnetic devices

A pvd chamber for growing a magnetic film of nife alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, dr/r of greater than 2 percent and film stress of less than 50 mpa. Nife alloy is sputtered at a distance of 2 to 4 inches, dc power of 50 watts to 9 kilowats and pressure of 3 to 8 millitorr. ... Veeco Instruments Inc

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Veeco Instruments Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Veeco Instruments Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by