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Win Semiconductors Corp patents


Recent patent applications related to Win Semiconductors Corp. Win Semiconductors Corp is listed as an Agent/Assignee. Note: Win Semiconductors Corp may have other listings under different names/spellings. We're not affiliated with Win Semiconductors Corp, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "W" | Win Semiconductors Corp-related inventors


Bulk acoustic wave filter and a method of frequency tuning for bulk acoustic wave resonator of bulk acoustic wave filter

A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.. . ... Win Semiconductors Corp

Method for fabricating bulk acoustic wave resonator with mass adjustment structure

A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.. . ... Win Semiconductors Corp

Coaxial probe structure

A coaxial probe structure, comprising: a support member, comprising a first connecting member; a connector, comprising a second connecting member; a coaxial probe, connecting with a connecting end of the coaxial probe to a bottom of the connector, and extending downwards from the bottom of the connector to a probe tip, and an included angle formed at a junction of the probe tip and the connecting end; and an elastic body connecting the support member with the junction of the connecting end and the probe tip of the coaxial probe.. . ... Win Semiconductors Corp

Bulk acoustic wave resonator with a mass adjustment structure and its application to bulk acoustic wave filter

A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. ... Win Semiconductors Corp

Radio frequency device

A radio frequency (rf) device includes a chip comprising a plurality of vias and at least a hot via; a signal lead and a ground lead disposed under a back side of the chip; and a signal metal sheet, a first ground metal sheet and a second ground metal sheet disposed on a top side of the chip. The signal metal sheet crosses over the first gap formed between the signal lead and the ground lead. ... Win Semiconductors Corp

Anti-plasma adhesive tape and manufacturing method

An anti-plasma adhesive tape utilized for manufacturing a semiconductor package includes a substrate; and an adhesive layer formed on the substrate, wherein the adhesive layer is selected from a group composed of acrylic adhesive, light-curable resin and photoinitiator. The anti-plasma adhesive tape is attached to a backside of a lead frame of the semiconductor package before a plasma-cleaning process and removed from the lead frame after a molding process. ... Win Semiconductors Corp

Integrated module of acoustic wave device with active thermal compensation and an active thermal compensating method thereof

An integrated module of acoustic wave device with active thermal compensation comprises a substrate, an acoustic wave filter, an active adjustment circuit and at least one variable capacitance device. The acoustic wave filter comprises a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. ... Win Semiconductors Corp

Thermal sensor circuit

A thermal sensor circuit comprises a conversion circuit which is one of a buck dc-dc converter circuit and a boost dc-dc converter circuit, wherein the conversion circuit comprises an inductor and an output terminal. A thermal sensor senses a thermal variation correlated to a capacitance variation of the thermal sensor. ... Win Semiconductors Corp

Thermal sensing acoustic wave resonator and acoustic wave filter having thermal sensing acoustic wave resonator

An acoustic wave filter having thermal sensing acoustic wave resonator comprises a substrate, a plurality of series acoustic wave resonators formed on the substrate, at least one shunt acoustic wave resonator formed on the substrate and a thermal sensing acoustic wave resonator. The thermal sensing acoustic wave resonator is one of a series acoustic wave resonator and a shunt acoustic wave resonator. ... Win Semiconductors Corp

Advanced moisture resistant structure of compound semiconductor integrated circuits

An advanced moisture resistant structure of compound semiconductor integrated circuit comprises a compound semiconductor substrate, a compound semiconductor epitaxial structure, a compound semiconductor integrated circuit and a moisture barrier layer. The compound semiconductor epitaxial structure is formed on the compound semiconductor substrate. ... Win Semiconductors Corp

Resonance structure of bulk acoustic wave resonator

A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. ... Win Semiconductors Corp

Protective cover for an acoustic wave device and fabrication method thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein at least one electrical device is provided on the surface of the substrate and the at least one electrical device includes a temperature sensor. The acoustic wave device protection structure comprising: a metal covering layer, having a concave surface and a bottom rim, the bottom rim connected to the acoustic wave device and forming at least one opening between the bottom rim and the acoustic wave device, and the concave surface covering over the resonant area to form a cavity between the concave surface and the resonant area.. ... Win Semiconductors Corp

Gate metal structure for compound semiconductor devices

An improved gate metal structure for compound semiconductor devices comprises sequentially a compound semiconductor substrate, a schottky barrier layer, an insulating layer and a gate metal. The insulating layer has a gate recess. ... Win Semiconductors Corp

Protection structure for semiconductor device package

A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. ... Win Semiconductors Corp

07/06/17 / #20170194451

Schottky barrier semiconductor device having a nanoscale film interface

A schottky barrier semiconductor device having a nanoscale film interface comprises a schottky barrier layer and a metal electrode; wherein a nanoscale film interface layer is formed on a top surface of the schottky barrier layer, a thickness of the nanoscale film interface layer is greater than 3 Å and smaller than 20 Å, the nanoscale film interface layer is made of at least one oxide; the metal electrode is formed on the nanoscale film interface layer and contacted with the nanoscale film interface layer.. . ... Win Semiconductors Corp

06/15/17 / #20170170233

Integrated structures of acoustic wave device and varactor, and acoustic wave device, varactor and power amplifier, and fabrication methods thereof

An integrated structure of acoustic wave device and varactor comprises an acoustic wave device and a varactor formed on a first part and a second part of a semiconductor substrate respectively. The acoustic wave device comprises an acoustic wave device upper structure and a first part of a bottom epitaxial structure. ... Win Semiconductors Corp

06/08/17 / #20170162518

Protection structure for semiconductor device package

A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.. . ... Win Semiconductors Corp

05/11/17 / #20170134000

Acoustic wave device structure, integrated structure of power amplifier and acoustic wave device

An integrated structure of power amplifier and acoustic wave device comprises: a compound semiconductor epitaxial substrate, a power amplifier upper structure formed on a first side of said compound semiconductor epitaxial substrate, and a film bulk acoustic resonator formed on a second side of said compound semiconductor epitaxial substrate; wherein forming an epitaxial structure on a compound semiconductor substrate to form said compound semiconductor epitaxial substrate; wherein said first side of said compound semiconductor epitaxial substrate and said power amplifier upper structure form a power amplifier; said second side of said compound semiconductor epitaxial substrate and said film bulk acoustic resonator form an acoustic wave device; the integrated structure of power amplifier and acoustic wave device on the same compound semiconductor epitaxial substrate is capable of reducing the component size, optimizing the impedance matching, and reducing the signal loss between power amplifier and acoustic wave device.. . ... Win Semiconductors Corp

04/20/17 / #20170110400

Layout method for compound semiconductor integrated circuits

A layout method for compound semiconductor integrated circuits, comprising following steps of: forming a first metal layer within a first circuit layout area which intersects with a second circuit layout area at an intersection area on a compound semiconductor substrate; defining an adjacent crossover area including said intersection area and a peripheral adjacent area thereof; a first dielectric area located within said adjacent crossover area and intersected with at least part of said intersection area; forming a first dielectric block within said first dielectric area or forming said first dielectric block within said first dielectric area and a second dielectric block outside said first dielectric area, the thickness of said second dielectric block is no greater than and the thickness of at least part of said second dielectric block is smaller than the thickness of said first dielectric block; forming a second metal layer within said second circuit layout area.. . ... Win Semiconductors Corp

03/23/17 / #20170084592

Method for fabricating a semiconductor integrated chip

The present invention relates to a compound semiconductor integrated circuit chip having a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. ... Win Semiconductors Corp

03/16/17 / #20170077899

Protective cover for an acoustic wave device and fabrication method thereof

A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial area on the acoustic wave device; forming a sacrificial layer on the sacrificial area; covering a metal covering layer on the sacrificial layer and connecting a bottom rim of the metal covering layer to the acoustic wave device and forming an opening between the bottom rim of the metal covering layer and the acoustic wave device; and removing the sacrificial layer to form a cavity between the metal covering layer and the resonant area by using a chemical solution, wherein the chemical solution enters from the opening between the metal covering layer and the acoustic wave device.. ... Win Semiconductors Corp

02/16/17 / #20170047299

High-frequency package

A high-frequency package comprises a die; a plurality of leads; and a die pad; wherein a surface of the die pad is lower than top surfaces of the plurality of leads, the die is disposed on the die pad with the lower surface, such that a top surface of the die is substantially aligned with the top surfaces of the plurality of leads.. . ... Win Semiconductors Corp

02/16/17 / #20170047292

High-frequency package

A high-frequency package comprises a ground lead occupying a side of the high-frequency package; and a signal lead comprising at least a protrusion protruding from a central portion of the signal lead; wherein the ground lead and the signal lead perform as a transmission line, and the at least a protrusion forms capacitance of the transmission line.. . ... Win Semiconductors Corp








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